CMOS-compatible photonic integrated circuits on thin-film ScAlN
Authors:
Sihao Wang,
Veerendra Dhyani,
Sakthi Sanjeev Mohanraj,
Xiaodong Shi,
Binni Varghese,
Wing Wai Chung,
Ding Huang,
Zhi Shiuh Lim,
Qibin Zeng,
Huajun Liu,
Xianshu Luo,
Victor Leong,
Nanxi Li,
Di Zhu
Abstract:
Scandium aluminum nitride (ScAlN) has recently emerged as an attractive material for integrated photonics due to its favorable nonlinear optical properties and compatibility with CMOS fabrication. Despite the promising and versatile material properties, it is still an outstanding challenge to realize low-loss photonic circuits on thin-film ScAlN-on-insulator wafers. Here, we present a systematic s…
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Scandium aluminum nitride (ScAlN) has recently emerged as an attractive material for integrated photonics due to its favorable nonlinear optical properties and compatibility with CMOS fabrication. Despite the promising and versatile material properties, it is still an outstanding challenge to realize low-loss photonic circuits on thin-film ScAlN-on-insulator wafers. Here, we present a systematic study on the material quality of sputtered thin-film ScAlN produced in a CMOS-compatible 200 mm line, and an optimized fabrication process to yield 400 nm thick, fully etched waveguides. With surface polishing and annealing, we achieve micro-ring resonators with an intrinsic quality factor as high as $1.47\times 10^5$, corresponding to a propagation loss of 2.4 dB/cm. These results serve as a critical step towards develo** future large-scale, low-loss photonic integrated circuits based on ScAlN.
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Submitted 11 June, 2024; v1 submitted 21 March, 2024;
originally announced March 2024.
