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Decoupling the Roles of Defects/Impurities and Wrinkles in Thermal Conductivity of Wafer-scale hBN Films
Authors:
Kousik Bera,
Dipankar Chugh,
Aditya Bandopadhyay,
Hark Hoe Tan,
Anushree Roy,
Chennupati Jagadish
Abstract:
We demonstrate a non-monotonic evolution of thermal conductivity of large-area hexagonal boron nitride films with thickness. Wrinkles and defects/impurities are present in these films. Raman spectroscopy, an optothermal non-contact technique, is employed to probe the temperature and laser power dependence property of the Raman active E2ghigh phonon mode, which in turn is used to estimate the rise…
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We demonstrate a non-monotonic evolution of thermal conductivity of large-area hexagonal boron nitride films with thickness. Wrinkles and defects/impurities are present in these films. Raman spectroscopy, an optothermal non-contact technique, is employed to probe the temperature and laser power dependence property of the Raman active E2ghigh phonon mode, which in turn is used to estimate the rise in the temperature of the films under different laser powers. As the conventional Fourier law of heat diffusion cannot be directly employed analytically to evaluate the thermal conductivity of these films with defects and wrinkles, finite element modeling is used instead. In the model, average heat resistance is used to incorporate an overall defect structure, and Voronoi cells with contact resistance at the cell boundaries are constructed to mimic the wrinkled domains. The effective thermal conductivity is estimated to be 87, 55, and 117 W/m.K for the 2, 10, and 30 nm-thick films, respectively. We also present a quantitative estimation of the thermal resistance by defects and wrinkles individually to the heat flow. Our study reveals that the defects/impurities render a much higher resistance to heat transfer in the films than wrinkles.
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Submitted 21 June, 2023; v1 submitted 16 November, 2022;
originally announced November 2022.
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Automated News Summarization Using Transformers
Authors:
Anushka Gupta,
Diksha Chugh,
Anjum,
Rahul Katarya
Abstract:
The amount of text data available online is increasing at a very fast pace hence text summarization has become essential. Most of the modern recommender and text classification systems require going through a huge amount of data. Manually generating precise and fluent summaries of lengthy articles is a very tiresome and time-consuming task. Hence generating automated summaries for the data and usi…
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The amount of text data available online is increasing at a very fast pace hence text summarization has become essential. Most of the modern recommender and text classification systems require going through a huge amount of data. Manually generating precise and fluent summaries of lengthy articles is a very tiresome and time-consuming task. Hence generating automated summaries for the data and using it to train machine learning models will make these models space and time-efficient. Extractive summarization and abstractive summarization are two separate methods of generating summaries. The extractive technique identifies the relevant sentences from the original document and extracts only those from the text. Whereas in abstractive summarization techniques, the summary is generated after interpreting the original text, hence making it more complicated. In this paper, we will be presenting a comprehensive comparison of a few transformer architecture based pre-trained models for text summarization. For analysis and comparison, we have used the BBC news dataset that contains text data that can be used for summarization and human generated summaries for evaluating and comparing the summaries generated by machine learning models.
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Submitted 23 April, 2021;
originally announced August 2021.
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Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride
Authors:
Hannah L. Stern,
John Jarman,
Qiushi Gu,
Simone Eizagirre Barker,
Noah Mendelson,
Dipankar Chugh,
Sam Schott,
Hoe H. Tan,
Henning Sirringhaus,
Igor Aharonovich,
Mete Atatüre
Abstract:
Optically addressable spins in materials are important platforms for quantum technologies, such as repeaters and sensors. Identification of such systems in two-dimensional (2d) layered materials offers advantages over their bulk counterparts, as their reduced dimensionality enables more feasible on-chip integration into devices. Here, we report optically detected magnetic resonance (ODMR) from pre…
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Optically addressable spins in materials are important platforms for quantum technologies, such as repeaters and sensors. Identification of such systems in two-dimensional (2d) layered materials offers advantages over their bulk counterparts, as their reduced dimensionality enables more feasible on-chip integration into devices. Here, we report optically detected magnetic resonance (ODMR) from previously identified carbon-related defects in 2d hexagonal boron nitride (hBN). We show that single-defect ODMR contrast can be as strong as 6% and displays a magnetic-field dependence with both positive or negative sign per defect. This bipolarity can shed light into low contrast reported recently for ensemble ODMR measurements for these defects. Further, the ODMR lineshape comprises a doublet resonance, suggesting either low zero-field splitting or hyperfine coupling. Our results offer a promising route towards realising a room-temperature spin-photon quantum interface in hexagonal boron nitride.
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Submitted 30 March, 2021;
originally announced March 2021.
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Identifying Carbon as the Source of Visible Single Photon Emission from Hexagonal Boron Nitride
Authors:
Noah Mendelson,
Dipankar Chugh,
Jeffrey R. Reimers,
Tin S. Cheng,
Andreas Gottscholl,
Hu Long,
Christopher J. Mellor,
Alex Zettl,
Vladimir Dyakonov,
Peter H. Beton,
Sergei V. Novikov,
Chennupati Jagadish,
Hark Hoe Tan,
Michael J. Ford,
Milos Toth,
Carlo Bradac,
Igor Aharonovich
Abstract:
Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by…
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Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by comparing various synthesis methods, we provide direct evidence that the visible SPEs are carbon related. Room temperature optically detected magnetic resonance (ODMR) is demonstrated on ensembles of these defects. We also perform ion implantation experiments and confirm that only carbon implantation creates SPEs in the visible spectral range. Computational analysis of hundreds of potential carbon-based defect transitions suggest that the emission results from the negatively charged VBCN- defect, which experiences long-range out-of-plane deformations and is environmentally sensitive. Our results resolve a long-standing debate about the origin of single emitters at the visible range in hBN and will be key to deterministic engineering of these defects for quantum photonic devices.
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Submitted 20 April, 2020; v1 submitted 2 March, 2020;
originally announced March 2020.
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Strain distribution and thermal strain relaxation in MOVPE grown hBN films on sapphire substrates
Authors:
Kousik Bera,
D. Chugh,
Atanu Patra,
H. Hoe Tan,
C. Jagadish Anushree Roy
Abstract:
Recently, hexagonal boron nitride (hBN) layers have generated a lot of interest as ideal substrates for 2D stacked devices. Sapphire-supported thin hBN films of different thicknesses are grown using metalorganic vapour phase epitaxy technique by following a flow modulation scheme. Though these films of relatively large size are potential candidates to be employed in designing real devices, they ex…
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Recently, hexagonal boron nitride (hBN) layers have generated a lot of interest as ideal substrates for 2D stacked devices. Sapphire-supported thin hBN films of different thicknesses are grown using metalorganic vapour phase epitaxy technique by following a flow modulation scheme. Though these films of relatively large size are potential candidates to be employed in designing real devices, they exhibit wrinkling. The formation of wrinkles is a key signature of strain distribution in a film. Raman imaging has been utilized to study the residual strain distribution in these wrinkled hBN films. An increase in the overall compressive strain in the films with an increase in the layer thickness has been observed. To find whether the residual lattice strain in the films can be removed by a thermal treatment, temperature dependent Raman measurements of these films are carried out. The study demonstrates that the thermal rate of strain evolution is higher in the films of lower thickness than in the thicker films. This observation further provides a possible explanation for the variation of strain in the as-grown films. An empirical relation has been proposed for estimating the residual strain from the morphology of the films. We have also shown that the residual strain can be partially released by the delamination of the films.
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Submitted 12 July, 2019;
originally announced July 2019.
