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Widely Tunable Berry curvature in the Magnetic Semimetal Cr1+dTe2
Authors:
Y. Fujisawa,
M. Pardo-Almanza,
C. H. Hsu,
A. Mohamed,
K. Yamagami,
A. Krishnadas,
F. C. Chuang,
K. H. Khoo,
J. Zang,
A. Soumyanarayanan,
Y. Okada
Abstract:
Magnetic semimetals have increasingly emerged as lucrative platforms hosting spin-based topological phenomena in real and momentum spaces. Of particular interest is the emergence of Berry curvature, whose geometric origin, accessibility from Hall transport experiments, and material tunability, bodes well for new physics and practical devices. Cr1+dTe2, a self-intercalated magnetic transition metal…
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Magnetic semimetals have increasingly emerged as lucrative platforms hosting spin-based topological phenomena in real and momentum spaces. Of particular interest is the emergence of Berry curvature, whose geometric origin, accessibility from Hall transport experiments, and material tunability, bodes well for new physics and practical devices. Cr1+dTe2, a self-intercalated magnetic transition metal dichalcogenide, TMD, exhibits attractive natural attributes relevant to such applications, including topological magnetism, tunable electron filling, magnetic frustration etc. While recent studies have explored real-space Berry curvature effects in this material, similar considerations of momentum-space Berry curvature are lacking. Here, we systematically investigate the electronic structure and transport properties of epitaxial Cr1+dTe2 thin films over a wide range of do**, d between 0.33 and 0.71. Spectroscopic experiments reveal the presence of a characteristic semi-metallic band region near the Brillouin Zone edge, which shows a rigid band like energy shift as a function of d. Transport experiments show that the intrinsic component of the anomalous Hall effect, AHE, is sizable, and undergoes a sign flip across d. Finally, density functional theory calculations establish a causal link between the observed do** evolution of the band structure and AHE: the AHE sign flip is shown to emerge from the sign change of the Berry curvature, as the semi-metallic band region crosses the Fermi energy. Our findings underscore the increasing relevance of momentum-space Berry curvature in magnetic TMDs and provide a unique platform for intertwining topological physics in real and momentum spaces.
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Submitted 4 July, 2022; v1 submitted 5 April, 2022;
originally announced April 2022.
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Itinerant ferromagnetism mediated by giant spin polarization of metallic ligand band in van der Waals magnet Fe5GeTe2
Authors:
K. Yamagami,
Y. Fujisawa,
B. Driesen,
C. H. Hsu,
K. Kawaguchi,
H. Tanaka,
T. Kondo,
Y. Zhang,
H. Wadati,
K. Araki,
T. Takeda,
Y. Takeda,
T. Muro,
F. C. Chuang,
Y. Niimi,
K. Kuroda,
M. Kobayashi,
Y. Okada
Abstract:
We investigate near-Fermi-energy (EF) element-specific electronic and spin states of ferromagnetic van der Waals (vdW) metal Fe5GeTe2. The soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) measurement provides spectroscopic evidence of localized Fe 3d band. We also find prominent hybridization between the localized Fe 3d band and the delocalized Ge/Te p bands. This picture is strongl…
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We investigate near-Fermi-energy (EF) element-specific electronic and spin states of ferromagnetic van der Waals (vdW) metal Fe5GeTe2. The soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) measurement provides spectroscopic evidence of localized Fe 3d band. We also find prominent hybridization between the localized Fe 3d band and the delocalized Ge/Te p bands. This picture is strongly supported from direct observation of the remarkable spin polarization of the ligand p bands near EF, using x-ray magnetic circular dichroism (XMCD) measurements. The strength of XMCD signal from ligand element Te shows the highest value, as far as we recognize, among literature reporting finite XMCD signal for none-magnetic element in any systems. Combining SX-ARPES and elemental selective XMCD measurements, we collectively point an important role of giant spin polarization of the delocalized ligand Te states for realizing itinerant long-range ferromagnetism in Fe5GeTe2. Our finding provides a fundamental elemental selective view-point for understanding mechanism of itinerant ferromagnetism in low dimensional compounds, which also leads insight for designing exotic magnetic states by interfacial band engineering in heterostructures.
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Submitted 4 January, 2021;
originally announced January 2021.
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Tailoring Magnetism in Self-intercalated Cr1+δTe2 Epitaxial Films
Authors:
Y. Fujisawa,
M. Pardo-Almanza,
J. Garland,
K. Yamagami,
X. Zhu,
X. Chen,
K. Araki,
T. Takeda,
M. Kobayashi,
Y. Takeda,
C. H. Hsu,
F. C. Chuang,
R. Laskowski,
K. H. Khoo,
A. Soumyanarayanan,
Y. Okada
Abstract:
Magnetic transition metal dichalcogenide (TMD) films have recently emerged as promising candidates to host novel magnetic phases relevant to next-generation spintronic devices. However, systematic control of the magnetization orientation, or anisotropy, and its thermal stability, characterized by Curie temperature (Tc) remains to be achieved in such films. Here we present self-intercalated epitaxi…
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Magnetic transition metal dichalcogenide (TMD) films have recently emerged as promising candidates to host novel magnetic phases relevant to next-generation spintronic devices. However, systematic control of the magnetization orientation, or anisotropy, and its thermal stability, characterized by Curie temperature (Tc) remains to be achieved in such films. Here we present self-intercalated epitaxial Cr1+δTe2 films as a platform for achieving systematic/smooth magnetic tailoring in TMD films. Using a molecular beam epitaxy (MBE) based technique, we have realized epitaxial Cr1+δTe2 films with smoothly tunable over a wide range (0.33-0.82), while maintaining NiAs-type crystal structure. With increasing δ, we found monotonic enhancement of Tc from 160 to 350 K, and the rotation of magnetic anisotropy from out-of-plane to in-plane easy axis configuration for fixed film thickness. Contributions from conventional dipolar and orbital moment terms are insufficient to explain the observed evolution of magnetic behavior with δ. Instead, ab initio calculations suggest that the emergence of antiferromagnetic interactions with δ, and its interplay with conventional ferromagnetism, may play a key role in the observed trends. To our knowledge, this constitutes the first demonstration of tunable Tc and magnetic anisotropy across room temperature in TMD films, and paves the way for engineering novel magnetic phases for spintronic applications.
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Submitted 1 August, 2020;
originally announced August 2020.
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Fermionic Order by Disorder in a van der Waals Antiferromagnet
Authors:
R. Okuma,
D. Ueta,
S. Kuniyoshi,
Y. Fujisawa,
B. Smith,
C. H. Hsu,
Y. Inagaki,
W. Si,
T. Kawae,
H. Lin,
F. C. Chuang,
T. Masuda,
R. Kobayashi,
Y. Okada
Abstract:
CeTe3 is a unique platform to investigate the itinerant magnetism in a van der Waals (vdW) coupled metal. Despite chemical pressure being a promising route to boost quantum fluctuation in this system, a systematic study on the chemical pressure effect on Ce3+(4f1) states is absent. Here, we report on the successful growth of a series of Se doped single crystals of CeTe3. We found a fluctuation dri…
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CeTe3 is a unique platform to investigate the itinerant magnetism in a van der Waals (vdW) coupled metal. Despite chemical pressure being a promising route to boost quantum fluctuation in this system, a systematic study on the chemical pressure effect on Ce3+(4f1) states is absent. Here, we report on the successful growth of a series of Se doped single crystals of CeTe3. We found a fluctuation driven exotic magnetic rotation from the usual easy-axis ordering to an unusual hard-axis ordering. Unlike in localized magnetic systems, near-critical magnetism can increase itinerancy hand-in-hand with enhancing fluctuation of magnetism. Thus, seemingly unstable hard-axis ordering emerges through kinetic energy gain, with the self-consistent observation of enhanced magnetic fluctuation (disorder). As far as we recognize, this order-by-disorder process in fermionic system is observed for the first time within vdW materials. Our finding opens a unique experimental platform for direct visualization of the rich quasiparticle Fermi surface deformation associated with the Fermionic order-by-disorder process. Also, the search for emergent exotic phases by further tuning of quantum fluctuation is suggested as a promising future challenge.
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Submitted 29 July, 2020;
originally announced July 2020.
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On the structure of the Si(103) surface
Authors:
C. V. Ciobanu,
F. C. Chuang,
D. E. Lytle
Abstract:
Although (103) is a stable nominal orientation for both silicon and germanium, experimental observations revealed that in the case of silicon this surface remains disordered on an atomic scale even after careful annealing. We report here a set of low-energy reconstruction models corresponding to $1\times 2$, $2\times 2$, and $1\times 4$ periodicities, and propose that the observed disorder stems…
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Although (103) is a stable nominal orientation for both silicon and germanium, experimental observations revealed that in the case of silicon this surface remains disordered on an atomic scale even after careful annealing. We report here a set of low-energy reconstruction models corresponding to $1\times 2$, $2\times 2$, and $1\times 4$ periodicities, and propose that the observed disorder stems from the presence of several coexisting reconstructions with different morphologies and nearly equal surface energies. These models also suggest that the model structures previously reported in the literature for the (103) orientation have very high surface energies and are thus unlikely to be experimentally observed.
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Submitted 5 September, 2007;
originally announced September 2007.
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Model reconstructions for the Si(337) orientation
Authors:
F. C. Chuang,
C. V. Ciobanu,
C. Z. Wang,
K. M. Ho
Abstract:
Although unstable, the Si(337) orientation has been known to appear in diverse experimental situations such as the nanoscale faceting of Si(112), or in the case of miscutting a Si(113) surface. Various models for Si(337) have been proposed over time, which motivates a comprehensive study of the structure of this orientation. Such a study is undertaken in this article, where we report the results…
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Although unstable, the Si(337) orientation has been known to appear in diverse experimental situations such as the nanoscale faceting of Si(112), or in the case of miscutting a Si(113) surface. Various models for Si(337) have been proposed over time, which motivates a comprehensive study of the structure of this orientation. Such a study is undertaken in this article, where we report the results of a genetic algorithm optimization of the Si(337)-$(2\times 1)$ surface. The algorithm is coupled with a highly optimized empirical potential for silicon, which is used as an efficient way to build a set of possible Si(337) models; these structures are subsequently relaxed at the level of ab initio density functional methods. Using this procedure, we retrieve most of the (337) reconstructions proposed in previous works, as well as a number of novel ones.
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Submitted 27 August, 2005; v1 submitted 31 March, 2005;
originally announced April 2005.
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Structure of Si(114) determined by global optimization methods
Authors:
F. C. Chuang,
C. V. Ciobanu,
C. Predescu,
C. Z. Wang,
K. M. Ho
Abstract:
In this article we report the results of global structural optimization of the Si(114) surface, which is a stable high-index orientation of silicon. We use two independent procedures recently developed for the determination of surface reconstructions, the parallel-tempering Monte Carlo method and the genetic algorithm. These procedures, coupled with the use of a highly-optimized interatomic pote…
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In this article we report the results of global structural optimization of the Si(114) surface, which is a stable high-index orientation of silicon. We use two independent procedures recently developed for the determination of surface reconstructions, the parallel-tempering Monte Carlo method and the genetic algorithm. These procedures, coupled with the use of a highly-optimized interatomic potential for silicon, lead to finding a set of possible models for Si(114), whose energies are recalculated with ab-initio density functional methods. The most stable structure obtained here without experimental input coincides with the structure determined from scanning tunneling microscopy experiments and density functional calculations by Erwin, Baski and Whitman [Phys. Rev. Lett. 77, 687 (1996)].
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Submitted 22 November, 2004;
originally announced November 2004.
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Finding the reconstructions of semiconductor surfaces via a genetic algorithm
Authors:
F. C. Chuang,
C. V. Ciobanu,
V. B. Shenoy,
C. Z. Wang,
K. M. Ho
Abstract:
In this article we show that the reconstructions of semiconductor surfaces can be determined using a genetic procedure. Coupled with highly optimized interatomic potentials, the present approach represents an efficient tool for finding and sorting good structural candidates for further electronic structure calculations and comparison with scanning tunnelling microscope (STM) images. We illustrat…
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In this article we show that the reconstructions of semiconductor surfaces can be determined using a genetic procedure. Coupled with highly optimized interatomic potentials, the present approach represents an efficient tool for finding and sorting good structural candidates for further electronic structure calculations and comparison with scanning tunnelling microscope (STM) images. We illustrate the method for the case of Si(105), and build a database of structures that includes the previously found low-energy models, as well as a number of novel configurations.
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Submitted 18 September, 2004; v1 submitted 10 August, 2004;
originally announced August 2004.
