Showing 1–50 of 74 results for author: Chshiev, M

Giant Spin-Orbit Torque in Cr-based Janus Transition Metal Dichalcogenides

Authors: Libor Vojáček, Joaquín Medina Dueñas, **g Li, Fatima Ibrahim, Aurélien Manchon, Stephan Roche, Mairbek Chshiev, José H. García

Abstract: We report a very large spin-orbit torque (SOT) capability of chromium-based transition metal dichalcogenides (TMD) in their Janus forms CrXTe, with X=S,Se. The structural inversion symmetry breaking, inherent to Janus structures is responsible for a large SOT response generated by giant Rashba splitting, equivalent to that obtained by applying a transverse electric field of… ▽ More We report a very large spin-orbit torque (SOT) capability of chromium-based transition metal dichalcogenides (TMD) in their Janus forms CrXTe, with X=S,Se. The structural inversion symmetry breaking, inherent to Janus structures is responsible for a large SOT response generated by giant Rashba splitting, equivalent to that obtained by applying a transverse electric field of $\sim 100 \,\text{V} \,\text{nm}^{-1}$ in non-Janus CrTe\textsubscript{2}, completely out of experimental reach. By performing transport simulations on custom-made Wannier tight-binding models, Janus systems are found to exhibit a SOT performance comparable to the most efficient two-dimensional materials, while allowing for field-free perpendicular magnetization switching owing to their reduced in-plane symmetry. Altogether, our findings evidence that magnetic Janus TMDs stand as suitable candidates for ultimate SOT-MRAM devices. △ Less

Submitted 23 April, 2024; originally announced April 2024.

Comments: 6 pages

Domain wall migration-mediated ferroelectric switching and Rashba effect tuning in GeTe thin films

Authors: Libor Vojáček, Mairbek Chshiev, **g Li

Abstract: Germanium Telluride (GeTe), identified as a ferroelectric Rashba semiconductor, is a promising candidate for future electronic devices in computing and memory applications. However, its ferroelectric switching on a microscopic scale remains to be understood. Here, we propose that the migration of a domain wall can be the mechanism that mediates the ferroelectric switching. By employing… ▽ More Germanium Telluride (GeTe), identified as a ferroelectric Rashba semiconductor, is a promising candidate for future electronic devices in computing and memory applications. However, its ferroelectric switching on a microscopic scale remains to be understood. Here, we propose that the migration of a domain wall can be the mechanism that mediates the ferroelectric switching. By employing $ab~initio$ methods, such a mechanism is characterized by an energy barrier of $66.8$ meV/nm$^2$, in a suitable range for retention and switchability. In accompanying the domain wall migration, the net Rashba effect is tunable, as it is a result of competition between layers with opposite electric polarization. These results shed light on the ferroelectric switching mechanism in GeTe, paving stones for the design of potential GeTe-based devices. △ Less

Submitted 20 April, 2024; originally announced April 2024.

Angular dependence of the interlayer coupling at the interface between two dimensional materials 1T-PtSe$_2$ and graphene

Authors: P. Mallet, F. Ibrahim, K. Abdukayumov, A. Marty, C. Vergnaud, F. Bonell, M. Chshiev, M. Jamet, J-Y. Veuillen

Abstract: We present a study by Scanning Tunneling Microscopy, supported by ab initio calculations, of the interaction between graphene and monolayer (semiconducting) PtSe$_2$ as a function of the twist angle $θ$ between the two layers. We analyze the PtSe$_2$ contribution to the hybrid interface states that develop within the bandgap of the semiconductor to probe the interaction. The experimental data indi… ▽ More We present a study by Scanning Tunneling Microscopy, supported by ab initio calculations, of the interaction between graphene and monolayer (semiconducting) PtSe$_2$ as a function of the twist angle $θ$ between the two layers. We analyze the PtSe$_2$ contribution to the hybrid interface states that develop within the bandgap of the semiconductor to probe the interaction. The experimental data indicate that the interlayer coupling increases markedly with the value of $θ$, which is confirmed by ab initio calculations. The moiré patterns observed within the gap are consistent with a momentum conservation rule between hybridized states, and the strength of the hybridization can be qualitatively described by a perturbative model. △ Less

Submitted 21 December, 2023; v1 submitted 14 November, 2023; originally announced November 2023.

Comments: Article: 12 pages, 3 figures; Supporting Informations: 19 pages, 12 figures

Journal ref: Physical Review Materials 7, L121001 (2023)

Atomic-layer controlled THz Spintronic emission from Epitaxially grown Two dimensional PtSe$_2$/ferromagnet heterostructures

Authors: K. Abdukayumov, M. Mičica, F. Ibrahim, C. Vergnaud, A. Marty, J. -Y. Veuillen, P. Mallet, I. Gomes de Moraes, D. Dosenovic, A. Wright, J. Tignon, J. Mangeney, A. Ouerghi, V. Renard, F. Mesple, F. Bonell, H. Okuno, M. Chshiev, J. -M. George, H. Jaffrès, S. Dhillon, M. Jamet

Abstract: Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimensional (2D) materials for new THz spintronic concepts. 2D materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for SCC as t… ▽ More Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimensional (2D) materials for new THz spintronic concepts. 2D materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for SCC as they possess strong spin-orbit coupling (SOC) and reduced crystal symmetries. Moreover, SCC and the resulting THz emission can be tuned with the number of layers, electric field or strain. Here, epitaxially grown 1T-PtSe$_2$ and sputtered Ferromagnet (FM) heterostructures are presented as a novel THz emitter where the 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe$_2$ layers is demonstrated and further FM deposition leaves the PtSe$_2$ unaffected, as evidenced with extensive characterization. Through this atomic growth control, the unique thickness dependent electronic structure of PtSe$_2$ allows the control of the THz emission by SCC. Indeed, we demonstrate the transition from the inverse Rashba-Edelstein effect in one monolayer to the inverse spin Hall effect in multilayers. This band structure flexibility makes PtSe$_2$ an ideal candidate as a THz spintronic 2D material and to explore the underlying mechanisms and engineering of the SCC for THz emission. △ Less

Submitted 11 May, 2023; originally announced May 2023.

Comments: 26 pages, 6 figures

From Early Theories of Dzyaloshinskii-Moriya Interactions in Metallic Systems to Today's Novel Roads

Authors: Albert Fert, Mairbek Chshiev, André Thiaville, Hongxin Yang

Abstract: Since the early 1960's, the discovery of Dzyaloshinskii-Moriya interaction (DMI) helped to explain the physical mechanisms behind certain magnetic phenomena, such as net moment in antiferromagnets, or enhanced anisotropy field from heavy metals impurity in dilute Cu:Mn alloy. Since the researchers unveil the key role that DMI plays in stabilizing chiral Neel type magnetic domain wall and magnetic… ▽ More Since the early 1960's, the discovery of Dzyaloshinskii-Moriya interaction (DMI) helped to explain the physical mechanisms behind certain magnetic phenomena, such as net moment in antiferromagnets, or enhanced anisotropy field from heavy metals impurity in dilute Cu:Mn alloy. Since the researchers unveil the key role that DMI plays in stabilizing chiral Neel type magnetic domain wall and magnetic skyrmions, the studies on DMI have received growing interest. Governed by spin-orbit coupling (SOC) and various types of inversion symmetry breaking (ISB) in magnetic systems, DMI drives the forming of distinct morphologies of magnetic skyrmions. Our aim is to briefly introduce the research history of DMI and its significance in the field of modern spintronics. △ Less

Submitted 3 May, 2023; originally announced May 2023.

Comments: Published in J. Phys. Soc. Jpn

Journal ref: J. Phys. Soc. Jpn (2023)

Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials

Authors: Quentin Guillet, Libor Vojacek, Djordje Dosenovic, Fatima Ibrahim, Herve Boukari, **g Li, Fadi Choueikani, Philippe Ohresser, Abdelkarim Ouerghi, Florie Mesple, Vincent Renard, Jean-Francois Jacquot, Denis Jalabert, Hanako Okuno, Mairbek Chshiev, Celine Vergnaud, Frederic Bonell, Alain Marty, Matthieu Jamet

Abstract: Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA a… ▽ More Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA and TC might be adjusted in ultrathin films by engineering composition, strain, or applying an electric field. In this work, we demonstrate the molecular beam epitaxy (MBE) growth of vdW heterostructures of five-monolayer quasi-freestanding Cr2Te3 on three classes of 2D materials: graphene (semimetal), WSe2 (semiconductor) and Bi2Te3 (topological insulator). By combining structural and chemical analysis down to the atomic level with ab initio calculations, we confirm the single crystalline character of Cr2Te3 films on the 2D materials with sharp vdW interfaces. They all exhibit PMA and TC close to the bulk Cr2Te3 value of 180 K. Ab initio calculations confirm this PMA and show how its strength depends on strain. Finally, Hall measurements reveal a strong anomalous Hall effect, which changes sign at a given temperature. We theoretically explain this effect by a sign change of the Berry phase close to the Fermi level. This transition temperature depends on the 2D material in proximity, notably as a consequence of charge transfer. MBE-grown Cr2Te3/2D material bilayers constitute model systems for the further development of spintronic devices combining PMA, large spin-orbit coupling and sharp vdW interface. △ Less

Submitted 6 March, 2023; originally announced March 2023.

Comments: 18 pages, 13 figures and Supplemental Material

Gradient-induced Dzyaloshinskii-Moriya interaction

Authors: **ghua Liang, Mairbek Chshiev, Albert Fert, Hongxin Yang

Abstract: The Dzyaloshinskii-Moriya interaction (DMI) that arises in the magnetic systems with broken inversion symmetry plays an essential role in topological spintronics. Here, by means of atomistic spin calculations, we study an intriguing type of DMI (g-DMI) that emerges in the films with composition gradient. We show that both the strength and chirality of g-DMI can be controlled by the composition gra… ▽ More The Dzyaloshinskii-Moriya interaction (DMI) that arises in the magnetic systems with broken inversion symmetry plays an essential role in topological spintronics. Here, by means of atomistic spin calculations, we study an intriguing type of DMI (g-DMI) that emerges in the films with composition gradient. We show that both the strength and chirality of g-DMI can be controlled by the composition gradient even in the disordered system. The layer-resolved analysis of g-DMI unveils its additive nature inside the bulk layers and clarifies the linear thickness dependence of g-DMI observed in experiments. Furthermore, we demonstrate the g-DMI induced chiral magnetic structures, such as spin spirals and skyrmions, and the g-DMI driven field-free spin-orbit torque (SOT) switching, both of which are crucial towards practical device application. These results elucidate the underlying mechanisms of g-DMI and open up a new way to engineer the topological magnetic textures. △ Less

Submitted 12 December, 2022; originally announced December 2022.

Comments: in production in Nano Letters

Journal ref: Nano Letters 2022

Multiferroic materials based on transition-metal dichalcogenides: Potential platform for reversible control of Dzyaloshinskii-Moriya interaction and skyrmion via electric field

Authors: Ziji Shao, **ghua Liang, Qirui Cui, Mairbek Chshiev, Albert Fert, Tiejun Zhou, Hongxin Yang

Abstract: Exploring novel two-dimensional multiferroic materials that can realize electric-field control of two-dimensional magnetism has become an emerging topic in spintronics. Using first-principles calculations, we demonstrate that non-metallic bilayer transition metal dichalcogenides (TMDs) can be an ideal platform for building multiferroics by intercalated magnetic atoms. Moreover, we unveil that with… ▽ More Exploring novel two-dimensional multiferroic materials that can realize electric-field control of two-dimensional magnetism has become an emerging topic in spintronics. Using first-principles calculations, we demonstrate that non-metallic bilayer transition metal dichalcogenides (TMDs) can be an ideal platform for building multiferroics by intercalated magnetic atoms. Moreover, we unveil that with Co intercalated bilayer MoS2, Co(MoS2)2, two energetic degenerate states with opposite chirality of Dzyaloshinskii-Moriya interaction (DMI) are the ground states, indicating electric-field control of the chirality of topologic magnetism such as skyrmions can be realized in this type of materials by reversing the electric polarization. These findings pave the way for electric-field control of topological magnetism in two-dimensional multiferroics with intrinsic magnetoelectric coupling. △ Less

Submitted 9 May, 2022; originally announced May 2022.

Comments: To appear in Phys. Rev. B

Journal ref: Phys. Rev. B (2022)

Skyrmions-based logic gates in one single nanotrack completely reconstructed via chirality barrier

Authors: Dongxing Yu, Hongxin Yang, Mairbek Chshiev, Albert Fert

Abstract: Logic gates based on magnetic elements are promising candidates for the logic-in-memory applications with nonvolatile data retention, near-zero leakage and scalability. In such spin-based logic device, however, the multi-strip structure and fewer functions are obstacles to improving integration and reducing energy consumption. Here we propose a skyrmions-based single-nanotrack logic family includi… ▽ More Logic gates based on magnetic elements are promising candidates for the logic-in-memory applications with nonvolatile data retention, near-zero leakage and scalability. In such spin-based logic device, however, the multi-strip structure and fewer functions are obstacles to improving integration and reducing energy consumption. Here we propose a skyrmions-based single-nanotrack logic family including AND, OR, NOT, NAND, NOR, XOR, and XNOR which can be implemented and reconstructed by building and switching Dzyaloshinskii-Moriya interaction (DMI) chirality barrier on a racetrack memory. Besides the pinning effect of DMI chirality barrier on skyrmions, the annihilation, fusion and shunting of two skyrmions with opposite chirality are also achieved and demonstrated via local reversal of DMI, which are necessary for the design of engineer programmable logic nanotrack, transistor and complementary racetrack memory. △ Less

Submitted 21 January, 2022; v1 submitted 16 January, 2022; originally announced January 2022.

Comments: Accepted by National Science Review

Mechanism of Spin-Orbit Torques in Platinum Oxide Systems

Authors: Jayshankar Nath, Alexandru Vladimir Trifu, Mihai Sebastian Gabor, Ali Hallal, Stephane Auffret, Sebastien Labau, Aymen Mahjoub, Edmond Chan, Avinash Kumar Chaurasiya, Amrit Kumar Mondal, Haozhe Yang, Eva Schmoranzerova, Mohamed Ali Nsibi, Isabelle Joumard, Anjan Barman, Bernard Pelissier, Mairbek Chshiev, Gilles Gaudin, Ioan Mihai Miron

Abstract: Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method to increase its energy efficiency. But the results are widely divergent due to the difficulty in controlling the HM oxidation because of its low enthalpy of for… ▽ More Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method to increase its energy efficiency. But the results are widely divergent due to the difficulty in controlling the HM oxidation because of its low enthalpy of formation. Here, we reconcile these differences by performing a gradual oxidation procedure, which allows correlating the chemical structure to the physical properties of the stack. As an HM layer, we chose Pt because of the strong SOT and the low enthalpy of formation of its oxides. We find evidence of an oxide inversion layer at the FM/HM interface: the oxygen is drawn into the FM, while the HM remains metallic near the interface. We further demonstrate that the oxygen migrates in the volume of the FM layer rather than being concentrated at the interface. Consequently, we find that the intrinsic magnitude of the SOT is unchanged compared to the fully metallic structure. The previously reported apparent increase of SOTs is not intrinsic to platinum oxide and instead arises from systemic changes produced by oxidation. △ Less

Submitted 13 December, 2021; originally announced December 2021.

Comments: 13 pages, 3 figures + Supplementary Information (15 pages, 16 figures)

Large-scale epitaxy of two-dimensional van der Waals room-temperature ferromagnet Fe5GeTe2

Authors: Mário Ribeiro, Giulio Gentile, Alain Marty, Djordje Dosenovic, Hanako Okuno, Céline Vergnaud, Jean-François Jacquot, Denis Jalabert, Danilo Longo, Philippe Ohresser, Ali Hallal, Mairbek Chshiev, Olivier Boulle, Frédéric Bonell, Matthieu Jamet

Abstract: In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers. Although heterostructures of such materials can be conceived to harness and couple a wide range of magneto-optical and magneto-electrical properties, technologically relevant applications require Curie temperatures at or abo… ▽ More In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers. Although heterostructures of such materials can be conceived to harness and couple a wide range of magneto-optical and magneto-electrical properties, technologically relevant applications require Curie temperatures at or above room-temperature and the ability to grow films over large areas. Here we demonstrate the large-area growth of single-crystal ultrathin films of stoichiometric Fe5GeTe2 on an insulating substrate using molecular beam epitaxy. Magnetic measurements show the persistence of soft ferromagnetism up to room temperature, with a Curie temperature of 293 K, and a weak out-of-plane magnetocrystalline anisotropy. Surface, chemical, and structural characterizations confirm the layer-by-layer growth, 5:1:2 Fe:Ge:Te stoichiometric elementary composition, and single crystalline character of the films. △ Less

Submitted 24 June, 2021; originally announced June 2021.

Journal ref: npj 2D Mater. Appl. 6, 10 (2022)

Coexistence of ferromagnetism and spin-orbit coupling by incorporation of platinum in two-dimensional VSe$_2$

Authors: E. Vélez-Fort, A. Hallal, R. Sant, T. Guillet, K. Abdukayumov, A. Marty, C. Vergnaud, J. -F. Jacquot, D. Jalabert, J. Fujii, I. Vobornik, J. Rault, N. B. Brookes, D. Longo, P. Ohresser, A. Ouerghi, J. -Y. Veuillen, P. Mallet, H. Boukari, H. Okuno, M. Chshiev, F. Bonell, M. Jamet

Abstract: We report on a novel material, namely two-dimensional (2D) V$_{1-x}$Pt$_x$Se$_2$ alloy, exhibiting simultaneously ferromagnetic order and Rashba spin-orbit coupling. While ferromagnetism is absent in 1T-VSe$_2$ due to the competition with the charge density wave phase, we demonstrate theoretically and experimentally that the substitution of vanadium by platinum in VSe$_2$ (10-50 %) to form an homo… ▽ More We report on a novel material, namely two-dimensional (2D) V$_{1-x}$Pt$_x$Se$_2$ alloy, exhibiting simultaneously ferromagnetic order and Rashba spin-orbit coupling. While ferromagnetism is absent in 1T-VSe$_2$ due to the competition with the charge density wave phase, we demonstrate theoretically and experimentally that the substitution of vanadium by platinum in VSe$_2$ (10-50 %) to form an homogeneous 2D alloy restores ferromagnetic order with Curie temperatures of 6 K for 5 monolayers and 25 K for one monolayer of V$_{0.65}$Pt$_{0.35}$Se$_2$. Moreover, the presence of platinum atoms gives rise to Rashba spin-orbit coupling in (V,Pt)Se$_2$ providing an original platform to study the interplay between ferromagnetism and spin-orbit coupling in the 2D limit. △ Less

Submitted 20 May, 2021; originally announced May 2021.

Comments: 5 pages, 5 figures

Rashba-type Dzyaloshinskii-Moriya interaction, perpendicular magnetic anisotropy and skyrmion states at 2D materials/Co interfaces

Authors: Ali Hallal, **ghua Liang, Fatima Ibrahim, Hongxin Yang, Albert Fert, Mairbek Chshiev

Abstract: We report a significant Dzyaloshinskii-Moriya interaction (DMI) and perpendicular magnetic anisotropy (PMA) at interfaces comprising hexagonal boron nitride (h-BN) and Co. By comparing the behavior of these phenomena at graphene/Co and h-BN/Co interfaces, it is found that the DMI in latter increases as a function of Co thickness and beyond three monolayers stabilizes with one order of magnitude la… ▽ More We report a significant Dzyaloshinskii-Moriya interaction (DMI) and perpendicular magnetic anisotropy (PMA) at interfaces comprising hexagonal boron nitride (h-BN) and Co. By comparing the behavior of these phenomena at graphene/Co and h-BN/Co interfaces, it is found that the DMI in latter increases as a function of Co thickness and beyond three monolayers stabilizes with one order of magnitude larger values compared to those at graphene/Co, where the DMI shows opposite decreasing behavior. At the same time, the PMA for both systems shows similar trends with larger values for graphene/Co and no significant variations for all thickness ranges of Co. Furthermore, using micromagnetic simulations we demonstrate that such significant DMI and PMA values remaining stable over large range of Co thickness give rise to formation of skyrmions with small applied external fields in the range of 200-250 mT up to 100 K temperatures. These findings open up further possibilities towards integrating two-dimensional (2D) materials in spin-orbitronics devices. △ Less

Submitted 19 May, 2021; originally announced May 2021.

Comments: 16 pages, 4 figures

Journal ref: Nano Lett. 21, 7138 (2021)

Spin charge conversion in Rashba split ferromagnetic interfaces

Authors: Olivier Rousseau, Cosimo Gorini, Fatima Ibrahim, Jean-Yves Chauleau, Aurélie Solignac, Ali Hallal, Sebastian Tölle, Mair Chshiev, Michel Viret

Abstract: We show here theoretically and experimentally that a Rashba-split electron state inside a ferromagnet can efficiently convert a dynamical spin accumulation into an electrical voltage. The effect is understood to stem from the Rashba splitting but with a symmetry linked to the magnetization direction. It is experimentally measured by spin pum** in a CoFeB/MgO structure where it is found to be as… ▽ More We show here theoretically and experimentally that a Rashba-split electron state inside a ferromagnet can efficiently convert a dynamical spin accumulation into an electrical voltage. The effect is understood to stem from the Rashba splitting but with a symmetry linked to the magnetization direction. It is experimentally measured by spin pum** in a CoFeB/MgO structure where it is found to be as efficient as the inverse spin Hall effect at play when Pt replaces MgO, with the extra advantage of not affecting the dam** in the ferromagnet. △ Less

Submitted 31 March, 2021; originally announced March 2021.

Current-driven domain wall dynamics in ferrimagnetic Ni-doped Mn4N films : very large domain wall velocities and reversal of motion direction across the magnetic compensation point

Authors: Sambit Ghosh, Taro Komori, Ali Hallal, Jose Peña Garcia, Toshiki Gushi, Taku Hirose, Haruka Mitarai, Hanako Okuno, Jan Vogel, Mairbek Chshiev, Jean-Philippe Attané, Laurent Vila, Takashi Suemasu, Stefania Pizzini

Abstract: Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow develo** new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT driven DW motion in ferrimagnetic manganese nickel nitride… ▽ More Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow develo** new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT driven DW motion in ferrimagnetic manganese nickel nitride (Mn4-xNixN) films, in which a fine adjustment of the Ni content allows setting the magnetic compensation at room temperature. The reduced magnetization, combined with the large spin polarization of conduction electrons, strongly enhances the STT so that domain wall velocities approaching 3000 m/s can be obtained for Ni compositions close to the compensation point. In addition, a reversal of the domain wall motion direction is observed when the magnetic compensation composition is crossed. This striking feature, related to the change of direction of the spin polarization with respect to that of the net magnetization, is clarified by ab initio band structure calculations. △ Less

Submitted 11 March, 2021; v1 submitted 11 January, 2021; originally announced January 2021.

Comments: 24 pages, 4 figures

Unveiling temperature dependence mechanisms of perpendicular magnetic anisotropy at Fe/MgO interfaces

Authors: Fatima Ibrahim, Ali Hallal, Alan Kalitsov, Derek Stewart, Bernard Dieny, Mairbek Chshiev

Abstract: The perpendicular magnetic anisotropy (PMA) at magnetic transition metal/oxide interfaces is a key element in building out-of-plane magnetized magnetic tunnel junctions for spin-transfer-torque magnetic random access memory (STT-MRAM). Size downscaling renders magnetic properties more sensitive to thermal effects. Thus, understanding the temperature dependence of the magnetic anisotropy is crucial… ▽ More The perpendicular magnetic anisotropy (PMA) at magnetic transition metal/oxide interfaces is a key element in building out-of-plane magnetized magnetic tunnel junctions for spin-transfer-torque magnetic random access memory (STT-MRAM). Size downscaling renders magnetic properties more sensitive to thermal effects. Thus, understanding the temperature dependence of the magnetic anisotropy is crucial. In this work, we theoretically address the correlation between temperature dependence of PMA and magnetization in typical Fe/MgO-based structures. In particular, the possible mechanisms behind the experiments reporting deviations from the Callen and Callen scaling power law are analyzed. At ideal interfaces, first-principles calculations reveal (i) small high-order anisotropy constants compared to first order and (ii) enhanced exchange constants. Considering these two intrinsic effects in the atomistic simulations, the temperature-dependence of the total and layer-resolved anisotropy are found to follow the Callen and Callen scaling power law, thus ruling out an intrinsic microscopic mechanism underlying deviations from this law. Besides, two possible extrinsic macroscopic mechanisms are unveiled namely the influence of the dead layer, often present in the storage layer of STT-MRAM cells, and the spatial inhomogeneities of the interfacial magnetic anisotropy. About the first mechanism, we show that the presence of a dead layer tends to reduce the scaling exponents. In the second mechanism, increasing the percentage of inhomogeneity in the interfacial PMA is revealed to decrease the scaling exponent. These results allow us to explain the difference in scaling exponents relating anisotropy and magnetization thermal variations reported in earlier experiments. This is crucial for the understanding of the thermal stability of the storage layer magnetization in STT-MRAM applications. △ Less

Submitted 27 May, 2022; v1 submitted 4 November, 2020; originally announced November 2020.

Comments: 12 pages, 15 figures

Journal ref: Phys. Rev. Applied 17, 054041 (2022)

Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer

Authors: Libor Vojáček, Fatima Ibrahim, Ali Hallal, Bernard Dieny, Mairbek Chshiev

Abstract: Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is non-volatile, fast, dense, and has quasi-infinite write endurance and low power consumption. Based on density functional theory (DFT) calculations, we propose an alternative design of magnetic tunnel junctions comprising Fe(n)Co(m)Fe(n)/MgO storage l… ▽ More Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is non-volatile, fast, dense, and has quasi-infinite write endurance and low power consumption. Based on density functional theory (DFT) calculations, we propose an alternative design of magnetic tunnel junctions comprising Fe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magnetic anisotropy (PMA) up to several mJ/m2, leveraging the interfacial perpendicular anisotropy of Fe/MgO along with a stress-induced bulk PMA discovered within bcc Co. This giant enhancement dominates the demagnetizing energy when increasing the film thickness. The tunneling magnetoresistance (TMR) estimated from the Julliere model is comparable with that of the pure Fe/MgO case. We discuss the advantages and pitfalls of a real-life fabrication of the structure and propose the Fe(3ML)Co(4ML)Fe(3ML) as a storage layer for MgO-based STT-MRAM cells. The large PMA in strained bcc Co is explained in the framework of Bruno's model by the MgO-imposed strain and consequent changes in the energies of dyz and dz2 minority-spin bands. △ Less

Submitted 31 July, 2020; originally announced July 2020.

Comments: 20 pages, 3 figures and supporting information

Journal ref: Phys. Rev. Applied 15, 024017 (2021)

Low-energy spin precession in the molecular field of a magnetic thin film

Authors: Christopher Vautrin, Daniel Lacour, Coriolan Tiusan, Yuan Lu, François Montaigne, Mairbek Chshiev, Wolfgang Weber, Michel Hehn

Abstract: Electronic spin precession and filtering are measured in the molecular field of magnetic thin films. The conducted lab-on-chip experiments allow injection of electrons with energies between 0.8 and 1.1 eV, an energy range never explored up to now in spin precession experiments. While filtering angles agree with previous reported values measured at much higher electron energies, spin precession ang… ▽ More Electronic spin precession and filtering are measured in the molecular field of magnetic thin films. The conducted lab-on-chip experiments allow injection of electrons with energies between 0.8 and 1.1 eV, an energy range never explored up to now in spin precession experiments. While filtering angles agree with previous reported values measured at much higher electron energies, spin precession angles of 2.5° in CoFe and 0.7° in Co per nanometer film thickness could be measured which are 30 times smaller than those previously measured at 7 eV. Band structure effects and layer roughness are responsible for these small precession angle values. △ Less

Submitted 8 May, 2020; originally announced May 2020.

Temperature dependence of transport mechanisms in organic multiferroic tunnel junctions

Authors: Can Xiao, Huawei Sun, Luming Cheng, Xavier Devaux, Anthony Ferri, Weichuan Huang, Rachel Desfeux, Xiao-Guang Li, Sylvie Migot, Mairbek Chshiev, Sajid Rauf, Yajun Qi, Ruilong Wang, Tian** Zhang, Chang** Yang, Shiheng Liang, Yuan Lu

Abstract: Organic multiferroic tunnel junctions (OMFTJs) with multi-resistance states have been proposed and drawn intensive interests due to their potential applications, for examples of memristor and spintronics based synapse devices. The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the F… ▽ More Organic multiferroic tunnel junctions (OMFTJs) with multi-resistance states have been proposed and drawn intensive interests due to their potential applications, for examples of memristor and spintronics based synapse devices. The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the FE-Org has been recently realized. However, there is still a lack of understanding of the transport properties in OMFTJs, especially the interplay between the ferroelectric domain structure in the organic barrier and the spin-polarized electron tunneling through the barrier. Here, we report on a systematic study of the temperature dependent transport behavior in La0.6Sr0.4MnO3/PVDF/Co OMFTJs. It is found that the thermal fluctuation of the ferroelectric domains plays an important role on the transport properties. When T>120K, the opposite temperature dependence of resistance for in up and down ferroelectric polarization states results in a rapid diminishing of tunneling electroresistance (TER). These results contribute to the understanding of the transport properties for designing high performance OMFTJs for memristor and spintronics applications. △ Less

Submitted 7 April, 2020; originally announced April 2020.

Journal ref: J. Phys. D: Appl. Phys. 2020

Enhancement of ferroelectric performance in PVDF:Fe3O4 nanocomposite based organic multiferroic tunnel junctions

Authors: Xue Gao, Shiheng Liang, Anthony Ferri, Weichuan Huang, Didier Rouxel, Xavier Devaux, Xiao-Guang Li, Hongxin Yang, Mairbek Chshiev, Rachel Desfeux, Antonio Da Costa, Guichao Hu, Mathieu Stoffel, Abir Nachawaty, Chun** Jiang, Zhongming Zeng, Jian-** Liu, Hui Yang, Yuan Lu

Abstract: We report on the fabrication of organic multiferroic tunnel junction (OMFTJ) based on an organic barrier of Poly(vinylidene fluoride) (PVDF):Fe3O4 nanocomposite. By adding Fe3O4 nanoparticles into the PVDF barrier, we found that the ferroelectric properties of the OMFTJ are considerably improved compared to that with pure PVDF barrier. It can lead to a tunneling electroresistance (TER) of about 45… ▽ More We report on the fabrication of organic multiferroic tunnel junction (OMFTJ) based on an organic barrier of Poly(vinylidene fluoride) (PVDF):Fe3O4 nanocomposite. By adding Fe3O4 nanoparticles into the PVDF barrier, we found that the ferroelectric properties of the OMFTJ are considerably improved compared to that with pure PVDF barrier. It can lead to a tunneling electroresistance (TER) of about 450% at 10K and 100% at room temperature (RT), which is much higher than that of the pure PVDF based device (70% at 10K and 7% at RT). OMFTJs based on the PVDF:Fe3O4 nanocomposite could open new functionalities in smart multiferroic devices via the interplay of the magnetism of nanoparticle with the ferroelectricity of the organic barrier. △ Less

Submitted 7 April, 2020; originally announced April 2020.

Journal ref: Applied Physics Letters vol.116 (2020)

Nitrogen magneto-ionics

Authors: Julius de Rojas, Alberto Quintana, Aitor Lopeandía, Joaquín Salguero, Beatriz Muñiz, Fatima Ibrahim, Mairbek Chshiev, Maciej O. Liedke, Maik Butterling, Andreas Wagner, Veronica Sireus, Llibertat Abad, Christopher J. Jensen, Kai Liu, Josep Nogués, José L. Costa-Krämer, Enric Menéndez, Jordi Sort

Abstract: So far, magneto-ionics, understood as voltage-driven ion transport in magnetic materials, has largely relied on controlled migration of oxygen ion/vacancy and, to a lesser extent, lithium and hydrogen. Here, we demonstrate efficient, room-temperature, voltage-driven nitrogen transport (i.e., nitrogen magneto-ionics) by electrolyte-gating of a single CoN film (without an ion-reservoir layer). Nitro… ▽ More So far, magneto-ionics, understood as voltage-driven ion transport in magnetic materials, has largely relied on controlled migration of oxygen ion/vacancy and, to a lesser extent, lithium and hydrogen. Here, we demonstrate efficient, room-temperature, voltage-driven nitrogen transport (i.e., nitrogen magneto-ionics) by electrolyte-gating of a single CoN film (without an ion-reservoir layer). Nitrogen magneto-ionics in CoN is compared to oxygen magneto-ionics in Co3O4, both layers showing a nanocrystalline face-centered-cubic structure and reversible voltage-driven ON-OFF ferromagnetism. In contrast to oxygen, nitrogen transport occurs uniformly creating a plane-wave-like migration front, without assistance of diffusion channels. Nitrogen magneto-ionics requires lower threshold voltages and exhibits enhanced rates and cyclability. This is due to the lower activation energy for ion diffusion and the lower electronegativity of nitrogen compared to oxygen. These results are appealing for the use of magneto-ionics in nitride semiconductor devices, in applications requiring endurance and moderate speeds of operation, such as brain-inspired computing. △ Less

Submitted 24 March, 2020; originally announced March 2020.

Comments: 35 pages, 5 main figures, 1 Table, supplementary information included

Spin-orbitronics at a topological insulator-semiconductor interface

Authors: T. Guillet, C. Zucchetti, A. Marchionni, A. Hallal, P. Biagioni, C. Vergnaud, A. Marty, M. Finazzi, F. Ciccacci, M. Chshiev, F. Bottegoni, M. Jamet

Abstract: Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform allowing for the exploitation of these assets is still lacking due to the difficult integration of these materials with the mainstream Si-based technology. Here, we exploit germanium as a substrate for the growth of Bi… ▽ More Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform allowing for the exploitation of these assets is still lacking due to the difficult integration of these materials with the mainstream Si-based technology. Here, we exploit germanium as a substrate for the growth of Bi$_2$Se$_3$, a prototypical TI. We probe the spin properties of the Bi$_2$Se$_3$/Ge pristine interface by investigating the spin-to-charge conversion taking place in the interface states by means of a non-local detection method. The spin population is generated by optical orientation in Ge, and diffuses towards the Bi$_2$Se$_3$ which acts as a spin detector. We compare the spin-to-charge conversion in Bi$_2$Se$_3$/Ge with the one taking place in Pt in the same experimental conditions. Notably, the sign of the spin-to-charge conversion given by the TI detector is reversed compared to the Pt one, while the efficiency is comparable. By exploiting first-principles calculations, we ascribe the sign reversal to the hybridization of the topological surface states of Bi$_2$Se$_3$ with the Ge bands. These results pave the way for the implementation of highly efficient spin detection in TI-based architectures compatible with semiconductor-based platforms. △ Less

Submitted 24 November, 2019; originally announced November 2019.

Comments: 5 pages and 5 figures

Journal ref: Phys. Rev. B 101, 184406 (2020)

Reversible control of Dzyaloshinskii-Moriya interaction at graphene/Co interface via hydrogen absorption

Authors: Baishun Yang, Qirui Cui, **ghua Liang, Mairbek Chshiev, Hongxin Yang

Abstract: Using first-principles calculations, we investigate the impact of hydrogenation on the Dzyaloshinskii-Moriya interaction (DMI) at graphene/Co interface. We find that both the magnitude and chirality of DMI can be controlled via hydrogenation absorbed on graphene surface. Our analysis using density of states combined with first-order perturbation theory reveals that the spin splitting and the occup… ▽ More Using first-principles calculations, we investigate the impact of hydrogenation on the Dzyaloshinskii-Moriya interaction (DMI) at graphene/Co interface. We find that both the magnitude and chirality of DMI can be controlled via hydrogenation absorbed on graphene surface. Our analysis using density of states combined with first-order perturbation theory reveals that the spin splitting and the occupation of Co-d orbitals, especially the dxz and dz2 states, play a crucial role in defining the magnitude and the chirality of DMI. Moreover, we find that the DMI oscillates with a period of two atomic layers as a function of Co thickness what could be explained by analysis of out-of-plane of Co orbitals. Our work elucidates the underlying mechanisms of interfacial DMI origin and provides an alternative route of its control for spintronic applications. △ Less

Submitted 12 September, 2019; originally announced September 2019.

Journal ref: Phys. Rev. B 101, 014406 (2020)

Unveiling multiferroic proximity effect in graphene

Authors: Fatima Ibrahim, Ali Hallal, Daniel Solis Lerma, Xavier Waintal, Evgeny Y. Tsymbal, Mairbek Chshiev

Abstract: We demonstrate that electronic and magnetic properties of graphene can be tuned via proximity of multiferroic substrate. Our first-principles calculations performed both with and without spin-orbit coupling clearly show that by contacting graphene with bismuth ferrite BiFeO$_3$ (BFO) film, the spin-dependent electronic structure of graphene is strongly impacted both by the magnetic order and by el… ▽ More We demonstrate that electronic and magnetic properties of graphene can be tuned via proximity of multiferroic substrate. Our first-principles calculations performed both with and without spin-orbit coupling clearly show that by contacting graphene with bismuth ferrite BiFeO$_3$ (BFO) film, the spin-dependent electronic structure of graphene is strongly impacted both by the magnetic order and by electric polarization in the underlying BFO. Based on extracted Hamiltonian parameters obtained from the graphene band structure, we propose a concept of six-resistance device based on exploring multiferroic proximity effect giving rise to significant proximity electro- (PER), magneto- (PMR), and multiferroic (PMER) resistance effects. This finding paves a way towards multiferroic control of magnetic properties in two dimensional materials. △ Less

Submitted 6 September, 2019; originally announced September 2019.

Comments: 20 pages, 4 figures

Journal ref: 2D Materials 7, 015020 (2019)

Self-induced inverse spin Hall effect in ferromagnets: demonstration through non-monotonous temperature-dependence in permalloy

Authors: O. Gladii, L. Frangou, A. Hallal, R. L. Seeger, P. Noel, G. Forestier, S. Auffret, M. Rubio-Roy, P. Warin, L. Vila, S. Wimmer, H. Ebert, S. Gambarelli, M. Chshiev, V. Baltz

Abstract: We investigated the self-induced inverse spin Hall effect in ferromagnets. Temperature (T), thickness (t) and angular-dependent measurements of transverse voltage in spin pum** experiments were performed with permalloy films. Results revealed non-monotonous T-dependence of the self-induced transverse voltage. Qualitative agreement was found with first-principle calculations unravelling the skew… ▽ More We investigated the self-induced inverse spin Hall effect in ferromagnets. Temperature (T), thickness (t) and angular-dependent measurements of transverse voltage in spin pum** experiments were performed with permalloy films. Results revealed non-monotonous T-dependence of the self-induced transverse voltage. Qualitative agreement was found with first-principle calculations unravelling the skew scattering, side-jump, and intrinsic contributions to the T-dependent spin Hall conductivity. Experimental data were similar whatever the material in contact with permalloy (oxides or metals), and revealed an increase of produced current with t, demonstrating a bulk origin of the effect. △ Less

Submitted 3 September, 2019; originally announced September 2019.

Journal ref: Phys. Rev. B 100, 174409 (2019)

Néel-type skyrmions and their current-induced motion in van der Waals ferromagnet-based heterostructures

Authors: Tae-Eon Park, Licong Peng, **ghua Liang, Ali Hallal, Fehmi Sami Yasin, Xichao Zhang, Sung Jong Kim, Kyung Mee Song, Kwangsu Kim, Markus Weigand, Gisela Schuetz, Simone Finizio, Joerg Raabe, Karin Garcia, **g Xia, Yan Zhou, Motohiko Ezawa, Xiaoxi Liu, Joonyeon Chang, Hyun Cheol Koo, Young Duck Kim, Mairbek Chshiev, Albert Fert, Hongxin Yang, Xiuzhen Yu , et al. (1 additional authors not shown)

Abstract: Since the discovery of ferromagnetic two-dimensional (2D) van der Waals (vdW) crystals, significant interest on such 2D magnets has emerged, inspired by their appealing properties and integration with other 2D family for unique heterostructures. In known 2D magnets, spin-orbit coupling (SOC) stabilizes perpendicular magnetic anisotropy (PMA). Such a strong SOC could also lift the chiral degeneracy… ▽ More Since the discovery of ferromagnetic two-dimensional (2D) van der Waals (vdW) crystals, significant interest on such 2D magnets has emerged, inspired by their appealing properties and integration with other 2D family for unique heterostructures. In known 2D magnets, spin-orbit coupling (SOC) stabilizes perpendicular magnetic anisotropy (PMA). Such a strong SOC could also lift the chiral degeneracy, leading to the formation of topological magnetic textures such as skyrmions through the Dzyaloshinskii-Moriya interaction (DMI). Here, we report the experimental observation of Néel-type chiral magnetic skyrmions and their lattice (SkX) formation in a vdW ferromagnet Fe3GeTe2 (FGT). We demonstrate the ability to drive individual skyrmion by short current pulses along a vdW heterostructure, FGT/h-BN, as highly required for any skyrmion-based spintronic device. Using first principle calculations supported by experiments, we unveil the origin of DMI being the interfaces with oxides, which then allows us to engineer vdW heterostructures for desired chiral states. Our finding opens the door to topological spin textures in the 2D vdW magnet and their potential device application. △ Less

Submitted 25 June, 2020; v1 submitted 2 July, 2019; originally announced July 2019.

Comments: 26 pages, 5 figures

Journal ref: Phys. Rev. B 103, 104410 (2021)

Proximity magnetoresistance in graphene induced by magnetic insulators

Authors: D. A. Solis, A. Hallal, X. Waintal, M. Chshiev

Abstract: We demonstrate the existence of Giant proximity magnetoresistance (PMR) effect in a graphene spin valve where spin polarization is induced by a nearby magnetic insulator. PMR calculations were performed for yttrium iron garnet (YIG), cobalt ferrite (CFO), and two europium chalcogenides EuO and EuS. We find a significant PMR (up to 100%) values defined as a relative change of graphene conductance w… ▽ More We demonstrate the existence of Giant proximity magnetoresistance (PMR) effect in a graphene spin valve where spin polarization is induced by a nearby magnetic insulator. PMR calculations were performed for yttrium iron garnet (YIG), cobalt ferrite (CFO), and two europium chalcogenides EuO and EuS. We find a significant PMR (up to 100%) values defined as a relative change of graphene conductance with respect to parallel and antiparallel alignment of two proximity induced magnetic regions within graphene. Namely, for high Curie temperature (Tc) CFO and YIG insulators which are particularly important for applications, we obtain 22% and 77% at room temperature, respectively. For low Tc chalcogenides, EuO and EuS, the PMR is 100% in both cases. Furthermore, the PMR is robust with respect to system dimensions and edge type termination. Our findings show that it is possible to induce spin polarized currents in graphene with no direct injection through magnetic materials. △ Less

Submitted 11 June, 2019; originally announced June 2019.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 100, 104402 (2019)

Very large Dzyaloshinskii-Moriya interaction in two-dimensional Janus manganese dichalcogenides and its application to realize skyrmion states

Authors: **ghua Liang, Weiwei Wang, Haifeng Du, Ali Hallal, Karin Garcia, Mairbek Chshiev, Albert Fert, Hongxin Yang

Abstract: The Dzyaloshinskii-Moriya interaction (DMI), which only exists in noncentrosymmetric systems, is responsible for the formation of exotic chiral magnetic states. The absence of DMI in most two-dimensional (2D) magnetic materials is due to their intrinsic inversion symmetry. Here, using first-principles calculations, we demonstrate that significant DMI can be obtained in a series of Janus monolayers… ▽ More The Dzyaloshinskii-Moriya interaction (DMI), which only exists in noncentrosymmetric systems, is responsible for the formation of exotic chiral magnetic states. The absence of DMI in most two-dimensional (2D) magnetic materials is due to their intrinsic inversion symmetry. Here, using first-principles calculations, we demonstrate that significant DMI can be obtained in a series of Janus monolayers of manganese dichalcogenides MnXY in which the difference between X and Y on the opposites sides of Mn breaks the inversion symmetry. In particular, the DMI amplitudes of MnSeTe and MnSTe are comparable to those of state-of-the-art ferromagnet/heavy metal (FM/HM) heterostructures. In addition, by performing Monte Carlo simulations, we find that at low temperatures the ground states of the MnSeTe and MnSTe monolayers can transform from ferromagnetic states with worm-like magnetic domains into the skyrmion states by applying external magnetic field. At increasing temperature, the skyrmion states starts fluctuating above 50 K before an evolution to a completely disordered structure at higher temperature. The present results pave the way for new device concepts utilizing chiral magnetic structures in specially designed 2D ferromagnetic materials. △ Less

Submitted 30 March, 2020; v1 submitted 3 June, 2019; originally announced June 2019.

Comments: 18 pages, 5 figures

Journal ref: Phys. Rev. B 101, 184401 (2020)

Symmetry broken spin reorientation transition in epitaxial MgO/Fe/MgO layers with competing anisotropies

Authors: Isidoro Martínez, Coriolan Tiusan, Michel Hehn, Mairbek Chshiev, Farkhad G. Aliev

Abstract: The observation of perpendicular magnetic anisotropy (PMA) at MgO/Fe interfaces boosted the development of spintronic devices based on ultrathin ferromagnetic layers. Yet, magnetization reversal in the standard magnetic tunnel junctions (MTJs) with competing PMA and in-plane anisotropies remains unclear. Here we report on the field induced nonvolatile broken symmetry magnetization reorientation tr… ▽ More The observation of perpendicular magnetic anisotropy (PMA) at MgO/Fe interfaces boosted the development of spintronic devices based on ultrathin ferromagnetic layers. Yet, magnetization reversal in the standard magnetic tunnel junctions (MTJs) with competing PMA and in-plane anisotropies remains unclear. Here we report on the field induced nonvolatile broken symmetry magnetization reorientation transition from the in-plane to the perpendicular (out of plane) state at temperatures below 50K. The samples were 10 nm thick Fe in MgO/Fe(100)/MgO as stacking components of V/MgO/Fe/MgO/Fe/Co double barrier MTJs. Micromagnetic simulations with PMA and different second order anisotropies at the opposite Fe/MgO interfaces qualitatively reproduce the observed broken symmetry spin reorientation transition. Our findings open the possibilities to develop multistate epitaxial spintronics based on competing magnetic anisotropies. △ Less

Submitted 9 May, 2018; v1 submitted 3 May, 2018; originally announced May 2018.

Large voltage tuning of Dzyaloshinskii-Moriya Interaction: a route towards dynamic control of skyrmion chirality

Authors: Titiksha Srivastava, Marine Schott, Roméo Juge, Viola Křižáková, Mohamed Belmeguenai, Yves Soussigné, Anne Bernand-Mantel, Laurent Ranno, Stefania Pizzini, Salim-Mourad Chérif, Andrey Stashkevich, Stéphane Auffret, Olivier Boulle, Gilles Gaudin, Mair Chshiev, Claire Baraduc, Hélène Béa

Abstract: Electric control of magnetism is a prerequisite for efficient and low power spintronic devices. More specifically, in heavy metal/ ferromagnet/ insulator heterostructures, voltage gating has been shown to locally and dynamically tune magnetic properties like interface anisotropy and saturation magnetization. However, its effect on interfacial Dzyaloshinskii-Moriya Interaction (DMI), which is cruci… ▽ More Electric control of magnetism is a prerequisite for efficient and low power spintronic devices. More specifically, in heavy metal/ ferromagnet/ insulator heterostructures, voltage gating has been shown to locally and dynamically tune magnetic properties like interface anisotropy and saturation magnetization. However, its effect on interfacial Dzyaloshinskii-Moriya Interaction (DMI), which is crucial for the stability of magnetic skyrmions, has been challenging to achieve and has not been reported yet for ultrathin films. Here, we demonstrate 130% variation of DMI with electric field in Ta/FeCoB/TaOx trilayers through Brillouin Light Spectroscopy (BLS). Using polar- Magneto-Optical-Kerr-Effect microscopy, we further show a monotonic variation of DMI and skyrmionic bubble size with electric field, with an unprecedented efficiency. We anticipate through our observations that a sign reversal of DMI with electric field is possible, leading to a chirality switch. This dynamic manipulation of DMI establishes an additional degree of control to engineer programmable skyrmion based memory or logic devices. △ Less

Submitted 26 June, 2018; v1 submitted 26 April, 2018; originally announced April 2018.

Comments: 17 pages, 4 figures

Impact of intergrain spin transfer torques due to huge thermal gradients on the performance of heat assisted magnetic recording

Authors: Bernard Dieny, Mair Chshiev, Brian Charles, Nikita Strelkov, Alain Truong, Olivier Fruchart, Ali Hallal, Jian Wang, Yukiko K. Takahashi, Tomohito Mizuno, Kazuhiro Hono

Abstract: Heat assisted magnetic recording (HAMR) is a new technology which uses temporary near field laser heating of the media during write to increase hard disk drive storage density. By using plasmonic antenna embedded in the write head, extremely high thermal gradient are created in the recording media (up to 10K/nm). State of the art HAMR media consists of grains of FePtX ordered alloys exhibiting hig… ▽ More Heat assisted magnetic recording (HAMR) is a new technology which uses temporary near field laser heating of the media during write to increase hard disk drive storage density. By using plasmonic antenna embedded in the write head, extremely high thermal gradient are created in the recording media (up to 10K/nm). State of the art HAMR media consists of grains of FePtX ordered alloys exhibiting high perpendicular anisotropy separated by insulating grain boundaries. Nearby the plasmonic antenna, the difference of temperature between two 8nm wide neighboring grains in the media can reach 80K, representing a gigantic thermal gradient of ~40K/nm across the grain boundary. Such situations with much weaker thermal gradient (~1K/nm, already considered as very large) have already been studied in the field of spincaloritronics. There, it was shown that very large spin transfer torques due to thermal gradients can arise in magnetic tunnel junctions which can even yield magnetization switching. Considering that two neighboring grains separated by an insulating grain boundary in a HAMR media can be viewed as a magnetic tunnel junction and that the thermal gradients in HAMR are one to two orders of magnitude larger than those existing in conventional spincaloritronics, one may expect a major impact from these thermal torques on magnetization switching dynamics and therefore on HAMR recording performances. This paper combines theory, experiments aiming at determining the polarization of tunneling electrons across the media grain boundaries, and micromagnetic simulations of recording process. It is shown that the thermal in-plane torque can have a detrimental impact on the recording performances by favoring antiparallel magnetic alignment between neighboring grains during the media cooling. Implications on media design are discussed in order to limit the impact of these thermal torques. △ Less

Submitted 8 December, 2017; originally announced December 2017.

Spin Hall and spin swap** torques in diffusive ferromagnets

Authors: C. O. Pauyac, M. Chshiev, A. Manchon, S. A. Nikolaev

Abstract: A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swap**, spin precession and relaxation processes. We argue that the spin swap** effect in ferromagne… ▽ More A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swap**, spin precession and relaxation processes. We argue that the spin swap** effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precessional effects displays a complex spatial dependence that can be exploited to generate torques and nucleate/propagate domain walls in centrosymmetric geometries without use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques. △ Less

Submitted 8 December, 2017; originally announced December 2017.

Journal ref: Phys. Rev. Lett. 120, 176802 (2018)

Large enhancement of the spin Hall effect in Au by scattering with side-jump on Ta impurities

Authors: P. Laczkowski, Y. Fu, H. Yang, J. -C. Rojas-Sánchez, P. Noel, V. T. Pham, G. Zahnd, C. Deranlot, S. Collin, C. Bouard, P. Warin, V. Maurel, M. Chshiev, A. Marty, J. -P. Attané, A. Fert, H. Jaffrès, L. Vila, J. -M. George

Abstract: We present measurements of the Spin Hall Effect (SHE) in AuW and AuTa alloys for a large range of W or Ta concentrations by combining experiments on lateral spin valves and Ferromagnetic-Resonance/spin pum** technique. The main result is the identification of a large enhancement of the Spin Hall Angle (SHA) by the side-jump mechanism on Ta impurities, with a SHA as high as + 0.5 (i.e $50\%$) for… ▽ More We present measurements of the Spin Hall Effect (SHE) in AuW and AuTa alloys for a large range of W or Ta concentrations by combining experiments on lateral spin valves and Ferromagnetic-Resonance/spin pum** technique. The main result is the identification of a large enhancement of the Spin Hall Angle (SHA) by the side-jump mechanism on Ta impurities, with a SHA as high as + 0.5 (i.e $50\%$) for about 10\% of Ta. In contrast the SHA in AuW does not exceed + 0.15 and can be explained by intrinsic SHE of the alloy without significant extrinsic contribution from skew or side-jump scattering by W impurities. The AuTa alloys, as they combine a very large SHA with a moderate resistivity (smaller than $85\,μΩ.cm$), are promising for spintronic devices exploiting the SHE. △ Less

Submitted 30 August, 2017; originally announced August 2017.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 96, 140405 (2017)

Significant Dzyaloshinskii-Moriya Interaction at Graphene-Ferromagnet Interfaces due to Rashba-effect

Authors: Hongxin Yang, Gong Chen, Alexandre A. C. Cotta, Alpha T. N'Diaye, Sergey A. Nikolaev, Edmar A. Soares, Waldemar A. A. Macedo, Andreas K. Schmid, Albert Fert, Mairbek Chshiev

Abstract: The possibility of utilizing the rich spin-dependent properties of graphene has attracted great attention in pursuit of spintronics advances. The promise of high-speed and low-energy consumption devices motivates a search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. Here we demonstrate that chiral spin textures are induced at graphene/ferrom… ▽ More The possibility of utilizing the rich spin-dependent properties of graphene has attracted great attention in pursuit of spintronics advances. The promise of high-speed and low-energy consumption devices motivates a search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. Here we demonstrate that chiral spin textures are induced at graphene/ferromagnetic metal interfaces. This is unexpected because graphene is a weak spin-orbit coupling material and is generally not expected to induce sufficient Dzyaloshinskii-Moriya interaction to affect magnetic chirality. We demonstrate that graphene induces a new type of Dzyaloshinskii-Moriya interaction due to a Rashba effect. First-principles calculations and experiments using spin-polarized electron microscopy show that this graphene-induced Dzyaloshinskii-Moriya interaction can have similar magnitude as at interfaces with heavy metals. This work paves a new path towards two-dimensional material based spin orbitronics. △ Less

Submitted 28 April, 2017; originally announced April 2017.

Comments: 21 pages, 4 figures

Journal ref: Nature Materials 17, 605 (2018)

Tailoring magnetic insulator proximity effects in graphene: First-principles calculations

Authors: A. Hallal, F. Ibrahim, H. X. Yang, S. Roche, M. Chshiev

Abstract: We report a systematic first-principles investigation of the influence of different magnetic insulators on the magnetic proximity effect induced in graphene. Four different magnetic insulators are considered: two ferromagnetic europium chalcogenides namely EuO and EuS and two ferrimagnetic insulators yttrium iron garnet (YIG) and cobalt ferrite (CFO). The obtained exchange-splitting varies from te… ▽ More We report a systematic first-principles investigation of the influence of different magnetic insulators on the magnetic proximity effect induced in graphene. Four different magnetic insulators are considered: two ferromagnetic europium chalcogenides namely EuO and EuS and two ferrimagnetic insulators yttrium iron garnet (YIG) and cobalt ferrite (CFO). The obtained exchange-splitting varies from tens to hundreds of meV. We also find an electron do** induced by YIG and europium chalcogenides substrates, that shift the Fermi level up to 0.78 eV and 1.3 eV respectively, whereas hole do** up to 0.5 eV is generated by CFO. Furthermore, we study the variation of the extracted exchange and tight binding parameters as a function of the EuO and EuS thicknesses. We show that those parameters are robust to thickness variation such that a single monolayer of magnetic insulator can induce a large magnetic proximity effect on graphene. Those findings pave the way towards possible engineering of graphene spin-gating by proximity effect especially in view of recent experiments advancement. △ Less

Submitted 29 October, 2016; originally announced October 2016.

Comments: 12 pages, 3 figures, submitted to 2D Materials

Journal ref: 2D Mater. 4, 025074 (2017)

Giant variation of the perpendicular magnetic anisotropy at Fe/MgO interfaces by oxygen migration: a first-principles study

Authors: F. Ibrahim, A. Hallal, B. Dieny, M. Chshiev

Abstract: A characteristic dependence of voltage control of perpendicular magnetic anisotropy (VCMA) on oxygen migration at Fe/MgO interfaces was revealed by performing systematic {\it ab initio} study of the energetics of the oxygen path around the interface. We find that the surface anisotropy energy exhibits a Boltzmann sigmoidal behavior as a function of the migrated O-atoms concentration. The obtained… ▽ More A characteristic dependence of voltage control of perpendicular magnetic anisotropy (VCMA) on oxygen migration at Fe/MgO interfaces was revealed by performing systematic {\it ab initio} study of the energetics of the oxygen path around the interface. We find that the surface anisotropy energy exhibits a Boltzmann sigmoidal behavior as a function of the migrated O-atoms concentration. The obtained variation of the VCMA efficiency factor $β$ reveals a saturation limit beyond a critical concentration of migrated O, about $54\%$, at which the anisotropy switches from perpendicular to in plane. Furthermore, depending on the range of variation of the applied voltage, two regimes associated with reversible or irreversible ions displacement are predicted to occur, yielding different VCMA response. According to our findings, one can distinguish from the order of magnitude of $β$ the VCMA driving mechanism: an effect of several tens of fJ/(V.m) is likely associated to charge-mediated effect combined with slight reversible oxygen displacements whereas an effect of the order of thousands of fJ/(V.m) is more likely associated with irreversible oxygen ionic migration. △ Less

Submitted 27 December, 2018; v1 submitted 27 October, 2016; originally announced October 2016.

Comments: 7 pages, 6 figures

Journal ref: Phys. Rev. B 98, 214441 (2018)

Intrinsic spin orbit torque in a single domain nanomagnet

Authors: A. Kalitsov, S. A. Nikolaev, J. Velev, M. Chshiev, O. Mryasov

Abstract: We present theoretical studies of the intrinsic spin orbit torque (SOT) in a single domain ferromagnetic layer with Rashba spin-orbit coupling (SOC) using the non-equilibrium Green's function formalism for a model Hamiltonian. We find that, to the first order in SOC, the intrinsic SOT has only the field-like torque symmetry and can be interpreted as the longitudinal spin current induced by the cha… ▽ More We present theoretical studies of the intrinsic spin orbit torque (SOT) in a single domain ferromagnetic layer with Rashba spin-orbit coupling (SOC) using the non-equilibrium Green's function formalism for a model Hamiltonian. We find that, to the first order in SOC, the intrinsic SOT has only the field-like torque symmetry and can be interpreted as the longitudinal spin current induced by the charge current and Rashba field. We analyze the results in terms of the material related parameters of the electronic structure, such as band filling, band width, exchange splitting, as well as the Rashba SOC strength. On the basis of these numerical and analytical results, we discuss the magnitude and sign of SOT. Our results show that the different sign of SOT in identical ferromagnetic layers with different supporting layers, e.g. Co/Pt and Co/Ta, could be attributed to electrostatic do** of the ferromagnetic layer by the support. △ Less

Submitted 1 January, 2018; v1 submitted 26 April, 2016; originally announced April 2016.

Comments: 10 pages, 2 figures

Journal ref: Phys. Rev. B 96, 214430 (2017)

Long range phase coherencein double barrier magnetic tunnel junctions with large thick metallic quantum well

Authors: B. S. Tao, H. X. Yang, Y. L. Zuo, X. Devaux, G. Lengaigne, M. Hehn, D. Lacour, S. Andrieu, M. Chshiev, T. Hauet, F. Montaigne, S. Mangin, X. F. Han, Y. Lu

Abstract: Double barrier heterostructures are model systems for the study of electron tunneling and discrete energy levels in a quantum well (QW). Until now resonant tunneling phenomena in metallicQW have been observed for limited thicknesses (1-2 nm) under which electron phase coherence is conserved. In the present study we show evidence of QW resonance states in Fe QW up to12 nmthick and at room temperatu… ▽ More Double barrier heterostructures are model systems for the study of electron tunneling and discrete energy levels in a quantum well (QW). Until now resonant tunneling phenomena in metallicQW have been observed for limited thicknesses (1-2 nm) under which electron phase coherence is conserved. In the present study we show evidence of QW resonance states in Fe QW up to12 nmthick and at room temperature in fully epitaxial doubleMgAlOxbarrier magnetic tunnel junctions. The electron phase coherence displayed in this QWis of unprecedented quality because ofa homogenous interface phase shift due to the small lattice mismatch at the Fe/MgAlOx interface. The physical understanding of the critical role of interface strain on QW phase coherence will greatly promote the development of the spin-dependent quantum resonant tunneling applications. △ Less

Submitted 2 September, 2015; originally announced April 2016.

Comments: 16 pages, 3 figures 1 table

Controlling Dzyaloshinskii-Moriya Interaction via Chirality Dependent Layer Stacking, Insulator Cap** and Electric Field

Authors: Hongxin Yang, Olivier Boulle, Vincent Cros, Albert Fert, Mairbek Chshiev

Abstract: Using first-principle calculations, we demonstrate several approaches to manipulate Dzyaloshinskii-Moriya Interaction (DMI) in ultrathin magnetic films. First, we find that DMI is significantly enhanced when the ferromagnetic (FM) layer is sandwiched between nonmagnetic (NM) layers inducing additive DMI in NM/FM/NM structures. For instance, as Pt and Ir below Co induce DMI of opposite chirality, i… ▽ More Using first-principle calculations, we demonstrate several approaches to manipulate Dzyaloshinskii-Moriya Interaction (DMI) in ultrathin magnetic films. First, we find that DMI is significantly enhanced when the ferromagnetic (FM) layer is sandwiched between nonmagnetic (NM) layers inducing additive DMI in NM/FM/NM structures. For instance, as Pt and Ir below Co induce DMI of opposite chirality, inserting Co between Pt (below) and Ir (above) in Ir/Co/Pt trilayers enhances the DMI of Co/Pt bilayers by 15\%. Furthermore, in case of Pb/Co/Pt trilayers (Ir/Fe/Co/Pt multilayers), DMI can be enhanced by 50\% (almost doubled) compared to Co/Pt bilayers reaching a very large DMI amplitude of 2.7 (3.2) meV/atom. Our second approach for enhancing DMI is to use oxide cap** layer. We show that DMI is enhanced by 60\% in Oxide/Co/Pt structures compared to Co/Pt bilayers. Moreover, we unveiled the DMI mechanism at Oxide/Co inerface due to interfacial electric field effect, which is different to Fert-Levy DMI at FM/NM interfaces. Finally, we demonstrate that DMI amplitude can be modulated using an electric field with efficiency factor comparable to that of the electric field control of perpendicular magnetic anisotropy in transition metal/oxide interfaces. These approaches of DMI controlling pave the way for skyrmions and domain wall motion-based spintronic applications. △ Less

Submitted 6 November, 2016; v1 submitted 6 March, 2016; originally announced March 2016.

Comments: 14 pages, 5 figures

Journal ref: Scientific Reports 8, 12356 (2018)

Second order anisotropy contribution in perpendicular magnetic tunnel junctions

Authors: A. A. Timopheev, R. Sousa, M. Chshiev, T. Nguyen, B. Dieny

Abstract: Magnetoresistance loops under in-plane applied field were measured on perpendicularly magnetized magnetic tunnel junction (pMTJ) pillars with nominal diameters ranging from 50 to 150 nm. By fitting the hard-axis magnetoresistance loops to an analytical model, the effective anisotropy fields in both free and reference layers were derived and their variations in temperature range between 340K and 5K… ▽ More Magnetoresistance loops under in-plane applied field were measured on perpendicularly magnetized magnetic tunnel junction (pMTJ) pillars with nominal diameters ranging from 50 to 150 nm. By fitting the hard-axis magnetoresistance loops to an analytical model, the effective anisotropy fields in both free and reference layers were derived and their variations in temperature range between 340K and 5K were determined. It is found that an accurate fitting is possible only if a second-order anisotropy term of the form $-K_{2}cos^4θ$, is added to the fitting model. This higher order contribution exists both in the free and reference layers and its sign is opposite to that of the first order anisotropy constant, $K_{1}$. At room temperatures the estimated $-K_{2}/K_{1}$ ratios are 0.1 and 0.24 for the free and reference layers, respectively. The ratio is more than doubled at low temperatures altering the ground state of the reference layer from 'easy-axis' to 'easy-cone' regime. Easy-cone state has clear signatures in the shape of the hard-axis magnetoresistance loops. The same behavior was observed in all measured devices regardless of their diameter. The existence of this higher order anisotropy was confirmed experimentally on FeCoB/MgO sheet films by ferromagnetic resonance technique. It is of interfacial nature and is believed to be linked to spatial fluctuations at the nanoscale of the anisotropy parameter at the FeCoB/MgO interface, in agreement with Dieny-Vedyayev model. △ Less

Submitted 18 February, 2016; originally announced February 2016.

Room temperature chiral magnetic skyrmion in ultrathin magnetic nanostructures

Authors: Olivier Boulle, Jan Vogel, Hongxin Yang, Stefania Pizzini, Dayane de Souza Chaves, Andrea Locatelli, Tevfik Onur Menteş Alessandro Sala, Liliana D. Buda-Prejbeanu, Olivier Klein, Mohamed Belmeguenai, Yves Roussigné, Andrey Stashkevich, Salim Mourad Chérif, Lucia Aballe, Michael Foerster, Mairbek Chshiev, Stéphane Auffret, Ioan Mihai Miron, Gilles Gaudin

Abstract: Magnetic skyrmions are chiral spin structures with a whirling configuration. Their topological properties, nanometer size and the fact that they can be moved by small current densities have opened a new paradigm for the manipulation of magnetisation at the nanoscale. To date, chiral skyrmion structures have been experimentally demonstrated only in bulk materials and in epitaxial ultrathin films an… ▽ More Magnetic skyrmions are chiral spin structures with a whirling configuration. Their topological properties, nanometer size and the fact that they can be moved by small current densities have opened a new paradigm for the manipulation of magnetisation at the nanoscale. To date, chiral skyrmion structures have been experimentally demonstrated only in bulk materials and in epitaxial ultrathin films and under external magnetic field or at low temperature. Here, we report on the observation of stable skyrmions in sputtered ultrathin Pt/Co/MgO nanostructures, at room temperature and zero applied magnetic field. We use high lateral resolution X-ray magnetic circular dichroism microscopy to image their chiral Néel internal structure which we explain as due to the large strength of the Dzyaloshinskii-Moriya interaction as revealed by spin wave spectroscopy measurements. Our results are substantiated by micromagnetic simulations and numerical models, which allow the identification of the physical mechanisms governing the size and stability of the skyrmions. △ Less

Submitted 10 January, 2016; originally announced January 2016.

Comments: Submitted version. Extended version to appear in Nature Nanotechnology

Anatomy and giant enhancement of the perpendicular magnetic anisotropy of cobalt-graphene heterostructures

Authors: Hongxin Yang, Anh Duc Vu, Ali Hallal, Nicolas Rougemaille, Johann Coraux, Gong Chen, Andreas K. Schmid, Mairbek Chshiev

Abstract: We report strongly enhanced perpendicular magnetic anisotropy (PMA) of Co films by graphene coating from both first-principles and experiments. Our calculations show that graphene can dramatically boost the surface anisotropy of Co films up to twice the value of its pristine counterpart and can extend the out-of-plane effective anisotropy up to unprecedented thickness of 25~Å. These findings are s… ▽ More We report strongly enhanced perpendicular magnetic anisotropy (PMA) of Co films by graphene coating from both first-principles and experiments. Our calculations show that graphene can dramatically boost the surface anisotropy of Co films up to twice the value of its pristine counterpart and can extend the out-of-plane effective anisotropy up to unprecedented thickness of 25~Å. These findings are supported by our experiments on graphene coating on Co films grown on Ir substrate. Furthermore, we report layer-resolved and orbital-hybridization-resolved anisotropy analysis which help understanding the physical mechanisms of PMA and more practically can help design structures with giant PMA. As an example, we propose super-exchange stabilized Co-graphene heterostructures with a robust out-of-plane constant effective PMA and linearly increasing interfacial anisotropy as a function of film thickness. These findings point towards possibilities to engineer graphene/ferromagnetic metal heterostructures with giant magnetic anisotropy more than 20 times larger compared to conventional multilayers, which constitutes a hallmark for future graphene and traditional spintronic technologies. △ Less

Submitted 26 August, 2015; originally announced August 2015.

Comments: 17 pages, 4 figures

Journal ref: Nano Lett., 2016, 16 (1), pp 145-151

Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic cap** layer structures

Authors: Shouzhong Peng, Mengxing Wang, Hongxin Yang, Lang Zeng, Jiang Nan, Jiaqi Zhou, Youguang Zhang, Ali Hallal, Mairbek Chshiev, Kang L. Wang, Qianfan Zhang, Weisheng Zhao

Abstract: Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven that… ▽ More Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven that a cap** layer coating on CoFeB layer is essential to obtain a strong PMA. However, the physical mechanism of such effect remains unclear. In this paper, we investigate the origin of the PMA in MgO/CoFe/metallic cap** layer structures by using a first-principles computation scheme. The trend of PMA variation with different cap** materials agrees well with experimental results. We find that interfacial PMA in the three-layer structures comes from both the MgO/CoFe and CoFe/cap** layer interfaces, which can be analyzed separately. Furthermore, the PMAs in the CoFe/cap** layer interfaces are analyzed through resolving the magnetic anisotropy energy by layer and orbital. The variation of PMA with different cap** materials is attributed to the different hybridizations of both d and p orbitals via spin-orbital coupling. This work can significantly benefit the research and development of nanoscale STT-MRAM. △ Less

Submitted 28 February, 2017; v1 submitted 12 June, 2015; originally announced June 2015.

Comments: 6 pages with 5 figures

Journal ref: Sci. Rep. 5, 18173 (2015)

Respective influence of in-plane and out-of-plane spin-transfer torques in magnetization switching of perpendicular magnetic tunnel junctions

Authors: A. A. Timopheev, R. Sousa, M. Chshiev, L. D. Buda-Prejbeanu, B. Dieny

Abstract: The relative contributions of in-plane (dam**-like) and out-of-plane (field-like) spin-transfer-torques in the magnetization switching of out-of-plane magnetized magnetic tunnel junctions (pMTJ) has been theoretically analyzed using the transformed Landau-Lifshitz (LL) equation with the STT terms. It is demonstrated that in a pMTJ structure obeying macrospin dynamics, the out-of-plane torque inf… ▽ More The relative contributions of in-plane (dam**-like) and out-of-plane (field-like) spin-transfer-torques in the magnetization switching of out-of-plane magnetized magnetic tunnel junctions (pMTJ) has been theoretically analyzed using the transformed Landau-Lifshitz (LL) equation with the STT terms. It is demonstrated that in a pMTJ structure obeying macrospin dynamics, the out-of-plane torque influences the precession frequency but it does not contribute significantly to the STT switching process (in particular to the switching time and switching current density), which is mostly determined by the in-plane STT contribution. This conclusion is confirmed by finite temperature and finite writing pulse macrospin simulations of the current-field switching diagrams. It contrasts with the case of STT-switching in in-plane magnetized MTJ in which the field-like term also influences the switching critical current. This theoretical analysis was successfully applied to the interpretation of voltage-field STT switching diagrams experimentally measured on perpendicular MTJ pillars 36 nm in diameter, which exhibit macrospin-like behavior. The physical nonequivalence of Landau and Gilbert dissipation terms in presence of STT-induced dynamics is also discussed. △ Less

Submitted 26 August, 2015; v1 submitted 2 June, 2015; originally announced June 2015.

Journal ref: Phys. Rev. B 92, 104430 (2015)

Anatomy of Dzyaloshinskii-Moriya Interaction at Co/Pt Interfaces

Authors: Hongxin Yang, André Thiaville, Stanislas Rohart, Albert Fert, Mairbek Chshiev

Abstract: The Dzyaloshinskii-Moriya Interaction (DMI) between spins is induced by spin-orbit coupling in magnetic materials lacking inversion symmetry. DMI is recognized to play a crucial role at the interface between ferromagnetic (FM) and heavy nonmagnetic (NM) metals to create topological textures called magnetic skyrmions which are very attractive for ultra-dense information storage and spintronic devic… ▽ More The Dzyaloshinskii-Moriya Interaction (DMI) between spins is induced by spin-orbit coupling in magnetic materials lacking inversion symmetry. DMI is recognized to play a crucial role at the interface between ferromagnetic (FM) and heavy nonmagnetic (NM) metals to create topological textures called magnetic skyrmions which are very attractive for ultra-dense information storage and spintronic devices. DMI also plays an essential role for fast domain wall (DW) dynamics driven by spin-orbit torques. Here, we present first principles calculations which clarify the main features and microscopic mechanisms of DMI in Co/Pt bilayers. DMI is found to be predominantly located at the interfacial Co layer, originating from spin-orbit energy provided by the adjacent NM layer. Furthermore, no direct correlation is found between DMI and proximity induced magnetism in Pt. These results clarify underlying mechanisms of DMI at FM/NM bilayers and should help optimizing material combinations for skyrmion- and DW-based storage and memory devices. △ Less

Submitted 22 January, 2015; originally announced January 2015.

Comments: 16 pages, 4 figures

Journal ref: Phys. Rev. Lett. 115, 267210 (2015)

Band edge noise spectroscopy of a magnetic tunnel junction

Authors: Farkhad G. Aliev, Juan Pedro Cascales, Ali Hallal, Mairbek Chshiev, Stephane Andrieu

Abstract: We propose a conceptually new way to gather information on the electron bands of buried metal(semiconductor)/insulator interfaces. The bias dependence of low frequency noise in Fe$_{1-x}$V$_{x}$/MgO/Fe (0 $<$ x $<$ 0.25) tunnel junctions show clear anomalies at specific applied voltages, reflecting electron tunneling to the band edges of the magnetic electrodes. The change in magnitude of these no… ▽ More We propose a conceptually new way to gather information on the electron bands of buried metal(semiconductor)/insulator interfaces. The bias dependence of low frequency noise in Fe$_{1-x}$V$_{x}$/MgO/Fe (0 $<$ x $<$ 0.25) tunnel junctions show clear anomalies at specific applied voltages, reflecting electron tunneling to the band edges of the magnetic electrodes. The change in magnitude of these noise anomalies with the magnetic state allows evaluating the degree of spin mixing between the spin polarized bands at the ferromagnet/insulator interface. Our results are in qualitative agreement with numerical calculations. △ Less

Submitted 22 January, 2015; originally announced January 2015.

Journal ref: Phys. Rev. Lett. 112, 216801 (2014)

First principles investigation of magnetocrystalline anisotropy at the L2$_1$ Full Heusler|MgO interfaces and tunnel junctions

Authors: Rajasekarakumar Vadapoo, Ali Hallal, Hongxin Yang, Mairbek Chshiev

Abstract: Magnetocrystalline anisotropy at Heusler alloy$|$MgO interfaces have been studied using first principles calculations. It is found that Co terminated Co$_{2}$FeAl$|$MgO interfaces show perpendicular magnetic anisotropy up to 1.31 mJ/m$^2$, while those with FeAl termination exhibit in-plane magnetic anisotropy. Atomic layer resolved analysis indicates that the origin of perpendicular magnetic aniso… ▽ More Magnetocrystalline anisotropy at Heusler alloy$|$MgO interfaces have been studied using first principles calculations. It is found that Co terminated Co$_{2}$FeAl$|$MgO interfaces show perpendicular magnetic anisotropy up to 1.31 mJ/m$^2$, while those with FeAl termination exhibit in-plane magnetic anisotropy. Atomic layer resolved analysis indicates that the origin of perpendicular magnetic anisotropy in Co$_{2}$FeAl$|$MgO interfaces can be attributed to the out-of-plane orbital contributions of interfacial Co atoms. At the same time, Co$_{2}$MnGe and Co$_{2}$MnSi interfaced with MgO tend to favor in-plane magnetic anisotropy for all terminations. △ Less

Submitted 16 September, 2016; v1 submitted 22 April, 2014; originally announced April 2014.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 94, 104418 (2016)

Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector

Authors: S. Liang, T. T. Zhang, P. Barate, J. Frougier, M. Vidal, P. Renucci, B. Xu, H. Jaffrès, J. M. George, X. Devaux, M. Hehn, X. Marie, S. Mangin, H. Yang, A. Hallal, M. Chshiev, T. Amand, H. Liu, D. Liu, X. Han, Z. Wang, Y. Lu

Abstract: We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was examined by the circular polarization of electroluminescence from a Spin Light Emitting Diode with embedded InGaAs/GaAs quantum wells. The electroluminescence pola… ▽ More We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was examined by the circular polarization of electroluminescence from a Spin Light Emitting Diode with embedded InGaAs/GaAs quantum wells. The electroluminescence polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the CoFeB/MgO injector. A circular polarization degree of the emitted light as large as 20% at 25 K is achieved at zero magnetic field. Moreover the electroluminescence circular polarization is still about 8% at room temperature. △ Less

Submitted 17 April, 2014; originally announced April 2014.

Comments: *Corresponding author: [email protected]

Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions

Authors: A. Hallal, B. Dieny, M. Chshiev

Abstract: Using first-principles calculations, we investigated the impact of chromium (Cr) and vanadium (V) impurities on the magnetic anisotropy and spin polarization in Fe/MgO magnetic tunnel junctions. It is demonstrated using layer resolved anisotropy calculation technique, that while the impurity near the interface has a drastic effect in decreasing the perpendicular magnetic anisotropy (PMA), its posi… ▽ More Using first-principles calculations, we investigated the impact of chromium (Cr) and vanadium (V) impurities on the magnetic anisotropy and spin polarization in Fe/MgO magnetic tunnel junctions. It is demonstrated using layer resolved anisotropy calculation technique, that while the impurity near the interface has a drastic effect in decreasing the perpendicular magnetic anisotropy (PMA), its position within the bulk allows maintaining high surface PMA. Moreover, the effective magnetic anisotropy has a strong tendency to go from in-plane to out-of-plane character as a function of Cr and V concentration favoring out-of-plane magnetization direction for ~1.5 nm thick Fe layers at impurity concentrations above 20 %. At the same time, spin polarization is not affected and even enhanced in most situations favoring an increase of tunnel magnetoresistance (TMR) values. △ Less

Submitted 14 April, 2014; originally announced April 2014.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. B 90, 064422 (2014)

Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barriers

Authors: Alan Kalitsov, Pierre-Jean Zermatten, Frédéric Bonell, Gilles Gaudin, Stéphane Andrieu, Coriolan Tiusan, Mairbek Chshiev, Julian P. Velev

Abstract: The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias dependence of tunneling magnetoresistance (TMR) in single crystal Fe/MgO-based MTJs with (i) one crystalline and one rough interface and (ii) with a monolayer of O dep… ▽ More The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias dependence of tunneling magnetoresistance (TMR) in single crystal Fe/MgO-based MTJs with (i) one crystalline and one rough interface and (ii) with a monolayer of O deposited at the crystalline interface. In both cases we observe an asymmetric bias dependence of TMR and a reversal of its sign at large bias. We propose a general model to explain the bias dependence in these and similar systems reported earlier. The model predicts the existence of two distinct TMR regimes: (i) tunneling regime when the interface is modified with layers of a different insulator and (ii) resonant regime when thin metallic layers are inserted at the interface. We demonstrate that in the tunneling regime negative TMR is due to the high voltage which overcomes the exchange splitting in the electrodes, while the asymmetric bias dependence of TMR is due to the interface transmission probabilities. In the resonant regime inversion of TMR could happen at zero voltage depending on the alignment of the resonance levels with the Fermi surfaces of the electrodes. Moreover, the model predicts a regime in which TMR has different sign at positive and negative bias suggesting possibilities of combining memory with logic functions. △ Less

Submitted 17 September, 2013; originally announced September 2013.