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STROBE-X: X-ray Timing and Spectroscopy on Dynamical Timescales from Microseconds to Years
Authors:
Paul S. Ray,
Zaven Arzoumanian,
David Ballantyne,
Enrico Bozzo,
Soren Brandt,
Laura Brenneman,
Deepto Chakrabarty,
Marc Christophersen,
Alessandra DeRosa,
Marco Feroci,
Keith Gendreau,
Adam Goldstein,
Dieter Hartmann,
Margarita Hernanz,
Peter Jenke,
Erin Kara,
Tom Maccarone,
Michael McDonald,
Michael Nowak,
Bernard Phlips,
Ron Remillard,
Abigail Stevens,
John Tomsick,
Anna Watts,
Colleen Wilson-Hodge
, et al. (134 additional authors not shown)
Abstract:
We present the Spectroscopic Time-Resolving Observatory for Broadband Energy X-rays (STROBE-X), a probe-class mission concept selected for study by NASA. It combines huge collecting area, high throughput, broad energy coverage, and excellent spectral and temporal resolution in a single facility. STROBE-X offers an enormous increase in sensitivity for X-ray spectral timing, extending these techniqu…
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We present the Spectroscopic Time-Resolving Observatory for Broadband Energy X-rays (STROBE-X), a probe-class mission concept selected for study by NASA. It combines huge collecting area, high throughput, broad energy coverage, and excellent spectral and temporal resolution in a single facility. STROBE-X offers an enormous increase in sensitivity for X-ray spectral timing, extending these techniques to extragalactic targets for the first time. It is also an agile mission capable of rapid response to transient events, making it an essential X-ray partner facility in the era of time-domain, multi-wavelength, and multi-messenger astronomy. Optimized for study of the most extreme conditions found in the Universe, its key science objectives include: (1) Robustly measuring mass and spin and map** inner accretion flows across the black hole mass spectrum, from compact stars to intermediate-mass objects to active galactic nuclei. (2) Map** out the full mass-radius relation of neutron stars using an ensemble of nearly two dozen rotation-powered pulsars and accreting neutron stars, and hence measuring the equation of state for ultradense matter over a much wider range of densities than explored by NICER. (3) Identifying and studying X-ray counterparts (in the post-Swift era) for multiwavelength and multi-messenger transients in the dynamic sky through cross-correlation with gravitational wave interferometers, neutrino observatories, and high-cadence time-domain surveys in other electromagnetic bands. (4) Continuously surveying the dynamic X-ray sky with a large duty cycle and high time resolution to characterize the behavior of X-ray sources over an unprecedentedly vast range of time scales. STROBE-X's formidable capabilities will also enable a broad portfolio of additional science.
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Submitted 8 March, 2019; v1 submitted 7 March, 2019;
originally announced March 2019.
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Beam Test Studies of 3D Pixel Sensors Irradiated Non-Uniformly for the ATLAS Forward Physics Detector
Authors:
S. Grinstein,
M. Baselga,
M. Boscardin,
M. Christophersen,
C. Da Via,
G. -F. Dalla Betta,
G. Darbo,
V. Fadeyev,
C. Fleta,
C. Gemme,
P. Grenier,
A. Jimenez,
I. Lopez,
A. Micelli,
C. Nellist,
S. Parker,
G. Pellegrini,
B. Phlips,
D. -L. Pohl,
H. F. -W. Sadrozinski,
P. Sicho,
S. Tsiskaridze
Abstract:
Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS Insertab…
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Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS Insertable B-Layer (IBL) upgrade carried out at CNM (Barcelona, Spain) and FBK (Trento, Italy). Based on this success, the ATLAS Forward Physics (AFP) experiment has selected the 3D pixel sensor technology for the tracking detector. The AFP project presents a new challenge due to the need for a reduced dead area with respect to IBL, and the in-homogeneous nature of the radiation dose distribution in the sensor. Electrical characterization of the first AFP prototypes and beam test studies of 3D pixel devices irradiated non-uniformly are presented in this paper.
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Submitted 21 April, 2015; v1 submitted 21 February, 2013;
originally announced February 2013.
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Self-Organized Formation of Fractal and Regular Pores in Semiconductors
Authors:
Jens Christian Claussen,
Jürgen Carstensen,
Marc Christophersen,
Sergiu Langa,
Helmut Föll
Abstract:
Electrochemical etching of semiconductors, beside technical applications, provides an interesting experimental setup for self-organized structure formation capable of regular, diameter-modulated, and branching pores. The underlying dynamical processes governing current transfer and structure formation are described by the Current-Burst-Model: all dissolution processes are assumed to occur inhomo…
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Electrochemical etching of semiconductors, beside technical applications, provides an interesting experimental setup for self-organized structure formation capable of regular, diameter-modulated, and branching pores. The underlying dynamical processes governing current transfer and structure formation are described by the Current-Burst-Model: all dissolution processes are assumed to occur inhomogeneously in time and space as a Current Burst (CB); properties and interactions between CB's are described by a number of material- and chemistry- dependent ingredients, like passivation and aging of surfaces in different crystallographic orientations, giving a qualitative understanding of resulting pore morphologies.
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Submitted 30 December, 2006;
originally announced January 2007.
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Self-organized pore formation and open-loop-control in semiconductor etching
Authors:
Jens Christian Claussen,
Jürgen Carstensen,
Marc Christophersen,
Sergiu Langa,
Helmut Föll
Abstract:
Electrochemical etching of semiconductors, apart from many technical applications, provides an interesting experimental setup for self-organized structure formation capable e.g. of regular, diameter-modulated, and branching pores. The underlying dynamical processes governing current transfer and structure formation are described by the Current-Burst-Model: all dissolution processes are assumed t…
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Electrochemical etching of semiconductors, apart from many technical applications, provides an interesting experimental setup for self-organized structure formation capable e.g. of regular, diameter-modulated, and branching pores. The underlying dynamical processes governing current transfer and structure formation are described by the Current-Burst-Model: all dissolution processes are assumed to occur inhomogeneously in time and space as a Current Burst (CB); the properties and interactions between CB's are described by a number of material- and chemistry- dependent ingredients, like passivation and aging of surfaces in different crystallographic orientations, giving a qualitative understanding of resulting pore morphologies. These morphologies cannot be influenced only by the current, by chemical, material and other etching conditions, but also by an open-loop control, triggering the time scale given by the oxide dissolution time. With this method, under conditions where only branching pores occur, the additional signal hinders side pore formation resulting in regular pores with modulated diameter.
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Submitted 23 August, 2006;
originally announced August 2006.
