Showing 1–5 of 5 results for author: Chrétien, J

Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse

Authors: Nicolas Paupy, Zakaria Oulad Elhmaidi, Alexandre Chapotot, Tadeáš Hanuš, Javier Arias-Zapata, Bouraoui Ilahi, Alexandre Heintz, Alex Brice Poungoué Mbeunmi, Roxana Arvinte, Mohammad Reza Aziziyan, Valentin Daniel, Gwenaëlle Hamon, Jérémie Chrétien, Firas Zouaghi, Ahmed Ayari, Laurie Mouchel, Jonathan Henriques, Loïc Demoulin, Thierno Mamoudou Diallo, Philippe-Olivier Provost, Hubert Pelletier, Maïté Volatier, Rufi Kurstjens, **youn Cho, Guillaume Courtois , et al. (10 additional authors not shown)

Abstract: Germanium (Ge) is increasingly used as a substrate for high-performance optoelectronic, photovoltaic, and electronic devices. These devices are usually grown on thick and rigid Ge substrates manufactured by classical wafering techniques. Nanomembranes (NMs) provide an alternative to this approach while offering wafer-scale lateral dimensions, weight reduction, limitation of waste, and cost effecti… ▽ More Germanium (Ge) is increasingly used as a substrate for high-performance optoelectronic, photovoltaic, and electronic devices. These devices are usually grown on thick and rigid Ge substrates manufactured by classical wafering techniques. Nanomembranes (NMs) provide an alternative to this approach while offering wafer-scale lateral dimensions, weight reduction, limitation of waste, and cost effectiveness. Herein, we introduce the Porous germanium Efficient Epitaxial LayEr Release (PEELER) process, which consists of the fabrication of wafer-scale detachable monocrystalline Ge NMs on porous Ge (PGe) and substrate reuse. We demonstrate monocrystalline Ge NMs with surface roughness below 1 nm on top of nanoengineered void layer enabling layer detachment. Furthermore, these Ge NMs exhibit compatibility with the growth of III-V materials. High-resolution transmission electron microscopy (HRTEM) characterization shows Ge NMs crystallinity and high-resolution X-ray diffraction (HRXRD) reciprocal space map** endorses high-quality GaAs layers. Finally, we demonstrate the chemical reconditioning process of the Ge substrate, allowing its reuse, to produce multiple free-standing NMs from a single parent wafer. The PEELER process significantly reduces the consumption of Ge during the fabrication process which paves the way for a new generation of low-cost flexible optoelectronics devices. △ Less

Submitted 6 October, 2022; originally announced October 2022.

Comments: 17 pages and 6 figures along with 3 figures in supporting information

Investigation of Lasing in Highly Strained Germanium at the Crossover to Direct Band Gap

Authors: Francesco Armand Pilon, Yann-Michel Niquet, Jeremie Chretien, Nicolas Pauc, Vincent Reboud, Vincent Calvo, Julie Widiez, Jean Michel Hartmann, Alexei Chelnokov, Jerome Faist, Hans Sigg

Abstract: Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the integration is complex and therefore costly. However, where low costs and also high integration density are crucial, group-IV-based lasers - made of Ge and GeS… ▽ More Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the integration is complex and therefore costly. However, where low costs and also high integration density are crucial, group-IV-based lasers - made of Ge and GeSn, for example - could be an alternative, provided their performance can be improved. Such progresses will come with better materials but also with the development of a profounder understanding of their optical properties. In this work, we demonstrate, using Ge microbridges with strain up to 6.6%, a powerful method for determining the population inversion gain and the material and optical losses of group IV lasers. This is made by deriving the values for the injection carrier densities and the cavity losses from the measurement of the change of the refractive index and the mode linewidth, respectively. We observe a laser threshold consistent with optical gain and material loss values obtained from a tight binding calculation. Lasing in Ge - at steady-state - is found to be limited to low temperatures in a narrow regime of tensile strain at the crossover to the direct band gap bandstructure. We explain this observation by parasitic intervalence band absorption that increases rapidly with higher injection densities and temperature. N-do** seems to reduce the material loss at low excitation but does not extend the lasing regime. We also discuss the impact of the optically inactive carriers in the L-valley on the linewidth of group IV lasers. △ Less

Submitted 17 June, 2022; v1 submitted 27 January, 2022; originally announced January 2022.

Comments: 29 pages, 70 references, 15 figures

Journal ref: Physical Review Research 4, 033050 (2022)

Large evanescently-induced Brillouin scattering at the surrounding of a nanofibre

Authors: Fan Yang, Flavien Gyger, Adrien Godet, Jacques Chrétien, Li Zhang, Meng Pang, Jean-Charles Beugnot, Luc Thévenaz

Abstract: Brillouin scattering has been widely exploited for advanced photonics functionalities such as microwave photonics, signal processing, sensing, lasing, and more recently in micro- and nano-photonic waveguides. So far, all the works have focused on the opto-acoustic interaction driven from the core region of micro- and nano-waveguides. Here we observe, for the first time, an efficient Brillouin scat… ▽ More Brillouin scattering has been widely exploited for advanced photonics functionalities such as microwave photonics, signal processing, sensing, lasing, and more recently in micro- and nano-photonic waveguides. So far, all the works have focused on the opto-acoustic interaction driven from the core region of micro- and nano-waveguides. Here we observe, for the first time, an efficient Brillouin scattering generated by an evanescent field nearby a sub-wavelength waveguide embedded in a pressurised gas cell, with a maximum gain coefficient of $18.90 \pm 0.17$ m$^{-1}$W$^{-1}$. This gain is 11 times larger than the highest Brillouin gain obtained in a hollow-core fibre and 79 times larger than in a standard single-mode fibre. The realisation of strong free-space Brillouin scattering from a waveguide benefits from the flexibility of confined light while providing a direct access to the opto-acoustic interaction, as required in free-space optoacoustics such as Brillouin spectroscopy and microscopy. Therefore, our work creates an important bridge between Brillouin scattering in waveguides, Brillouin spectroscopy and microscopy, and opens new avenues in light-sound interactions, optomechanics, sensing, lasing and imaging. △ Less

Submitted 11 April, 2021; originally announced April 2021.

Comments: Main manuscript: 8 pages, 6 figures; Supplementary: 5 pages, 3 figures

Journal ref: Nature Communications, 13:1432 (2022)

Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region

Authors: Anas Elbaz, Riazul Arefin, Emilie Sakat, Binbin Wang, Etienne Herth, Gilles Patriarche, Antonino Foti, Razvigor Ossikovski, Sebastien Sauvage, Xavier Checoury, Konstantinos Pantzas, Isabelle Sagnes, Jérémie Chrétien, Lara Casiez, Mathieu Bertrand, Vincent Calvo, Nicolas Pauc, Alexei Chelnokov, Philippe Boucaud, Frederic Boeuf, Vincent Reboud, Jean-Michel Hartmann, Moustafa El Kurdi

Abstract: GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless su… ▽ More GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7 \% to 10.5 \%. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4-\SI{8 }{\micro\meter} range. We evidence direct band gap in GeSn with 7 \% of Sn and lasing at 2-\SI{2.3 }{\micro\meter} wavelength under optical injection with reproducible lasing thresholds around \SI{10 }{\kilo\watt\per\square\centi\meter}, lower by one order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources. △ Less

Submitted 21 December, 2020; originally announced December 2020.

Comments: 30 pages, 9 figures

Journal ref: ACS Photonics 2020, 7, 10, 2713-2722

Nonlinear elasticity of silica nanofiber

Authors: Adrien Godet, Thibaut Sylvestre, Vincent Pécheur, Jacques Chrétien, Jean-Charles Beugnot, Kien Phan Huy

Abstract: Optical nanofibers (ONFs) are excellent nanophotonic platforms for various applications such as optical sensing, quantum and nonlinear optics, due to both the tight optical confinement and their wide evanescent field in the sub-wavelength limit. Other remarkable features of these ultrathin fibers are their surface acoustic properties and their high tensile strength. Here we investigate Brillouin l… ▽ More Optical nanofibers (ONFs) are excellent nanophotonic platforms for various applications such as optical sensing, quantum and nonlinear optics, due to both the tight optical confinement and their wide evanescent field in the sub-wavelength limit. Other remarkable features of these ultrathin fibers are their surface acoustic properties and their high tensile strength. Here we investigate Brillouin light scattering in silica-glass tapered optical fibers under high tensile strain and show that the fundamental properties of elastic waves dramatically change due to elastic anisotropy and nonlinear elasticity for strain larger than 2%. This yields to unexpected and remarkable Brillouin strain coefficients for all Brillouin resonances including surface and hybrid waves, followed by a nonlinear evolution at high tensile strength. We further provide a complete theoretical analysis based on third-order nonlinear elasticity of silica that remarkably agrees with our experimental data. These new regimes open the way to the development of compact tensile strain optical sensors based on nanofibers. △ Less

Submitted 25 April, 2019; originally announced April 2019.