Showing 1–1 of 1 results for author: Chowdhury, S F

Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions

Authors: Hema C. P. Movva, Michael E. Ramón, Chris M. Corbet, Sushant Sonde, Sk. Fahad Chowdhury, Gary Carpenter, Emanuel Tutuc, Sanjay K. Banerjee

Abstract: We report a method of fabricating self-aligned, top-gated graphene field-effect transistors (GFETs) employing polyethyleneimine spin-on-doped source/drain access regions, resulting in a 2X reduction of access resistance and a 2.5X improvement in device electrical characteristics, over undoped devices. The GFETs on Si/SiO$_2$ substrates have high carrier mobilities of up to 6,300 cm$^2$/Vs. Self-al… ▽ More We report a method of fabricating self-aligned, top-gated graphene field-effect transistors (GFETs) employing polyethyleneimine spin-on-doped source/drain access regions, resulting in a 2X reduction of access resistance and a 2.5X improvement in device electrical characteristics, over undoped devices. The GFETs on Si/SiO$_2$ substrates have high carrier mobilities of up to 6,300 cm$^2$/Vs. Self-aligned spin-on-do** is applicable to GFETs on arbitrary substrates, as demonstrated by a 3X enhancement in performance for GFETs on insulating quartz substrates, which are better suited for radio frequency applications. △ Less

Submitted 6 November, 2012; v1 submitted 19 October, 2012; originally announced October 2012.

Comments: 5 pages, 5 figures

Journal ref: Appl. Phys. Lett. 101, 183113 (2012)