Showing 1–10 of 10 results for author: Chowdhury, M H

Design of Novel 3T Ternary DRAM with Single Word-Line using CNTFET

Authors: Zarin Tasnim Sandhie, Farid Uddin Ahmed, Masud H. Chowdhury

Abstract: Ternary logic system is the most promising and pursued alternate to the prevailing binary logic systems due to the energy efficiency of circuits following reduced circuit complexity and chip area. In this paper, we have proposed a ternary 3-Transistor Dynamic Random-Access Memory (3T-DRAM) cell using a single word-line for both read and write operation. For simulation of the circuit, we have used… ▽ More Ternary logic system is the most promising and pursued alternate to the prevailing binary logic systems due to the energy efficiency of circuits following reduced circuit complexity and chip area. In this paper, we have proposed a ternary 3-Transistor Dynamic Random-Access Memory (3T-DRAM) cell using a single word-line for both read and write operation. For simulation of the circuit, we have used Carbon-Nano-Tube Field Effect Transistor (CNTFET). Here, we have analyzed the operation of the circuit considering different process variations and showed the results for write delay, read sensing time, and consumed current. Along with the basic DRAM design, we have proposed a ternary sense circuitry for the proper read operation of the proposed DRAM. The simulation and analysis are executed using the H-SPICE tool with Stanford University CNTFET model. △ Less

Submitted 20 August, 2021; originally announced August 2021.

A survey of the noise-correcting tools for Dynamic Mode Decomposition

Authors: Moajjem H. Chowdhury, Nazmul Islam Shuzan, Mohammad N. Murshed, Sanwar Alam, M. Monir Uddin, Zarin Subah

Abstract: Dynamic Mode Decomposition (DMD) is a data-driven modeling tool that generates a model from spatio-temporal data. The data needs to be as clean as possible for DMD to come up with a faithful model. We review a few data-filtering methods to be integrated with DMD and test them on datasets of varying complexity. The impact of SNR on these methods and the error variation in the DMD model due to each… ▽ More Dynamic Mode Decomposition (DMD) is a data-driven modeling tool that generates a model from spatio-temporal data. The data needs to be as clean as possible for DMD to come up with a faithful model. We review a few data-filtering methods to be integrated with DMD and test them on datasets of varying complexity. The impact of SNR on these methods and the error variation in the DMD model due to each method are observed and discussed. △ Less

Submitted 3 March, 2021; originally announced March 2021.

Comments: 13 pages

A Novel Non-Invasive Estimation of Respiration Rate from Photoplethysmograph Signal Using Machine Learning Model

Authors: Md Nazmul Islam Shuzan, Moajjem Hossain Chowdhury, Muhammad E. H. Chowdhury, M. Monir Uddin, Amith Khandakar, Zaid B. Mahbub, Naveed Nawaz

Abstract: Respiratory ailments such as asthma, chronic obstructive pulmonary disease (COPD), pneumonia, and lung cancer are life-threatening. Respiration rate (RR) is a vital indicator of the wellness of a patient. Continuous monitoring of RR can provide early indication and thereby save lives. However, a real-time continuous RR monitoring facility is only available at the intensive care unit (ICU) due to t… ▽ More Respiratory ailments such as asthma, chronic obstructive pulmonary disease (COPD), pneumonia, and lung cancer are life-threatening. Respiration rate (RR) is a vital indicator of the wellness of a patient. Continuous monitoring of RR can provide early indication and thereby save lives. However, a real-time continuous RR monitoring facility is only available at the intensive care unit (ICU) due to the size and cost of the equipment. Recent researches have proposed Photoplethysmogram (PPG) and/ Electrocardiogram (ECG) signals for RR estimation however, the usage of ECG is limited due to the unavailability of it in wearable devices. Due to the advent of wearable smartwatches with built-in PPG sensors, it is now being considered for continuous monitoring of RR. This paper describes a novel approach to RR estimation using machine learning (ML) models with the PPG signal features. Feature selection algorithms were used to reduce computational complexity and the chance of overfitting. The best ML model and the best feature selection algorithm combination was fine-tuned to optimize its performance using hyperparameter optimization. Gaussian Process Regression (GPR) with fitrgp feature selection algorithm outperformed all other combinations and exhibits a root mean squared error (RMSE), mean absolute error (MAE), and two-standard deviation (2SD) of 2.57, 1.91, and 5.13 breaths per minute, respectively. This ML model based RR estimation can be embedded in wearable devices for real-time continuous monitoring of the patient. △ Less

Submitted 18 February, 2021; originally announced February 2021.

Comments: Under review in CMPB

Towards an improved Eigensystem Realization Algorithm for low-error guarantees

Authors: Mohammad N. Murshed, Moajjem Hossain Chowdhury, Md. Nazmul Islam Shuzan, M. Monir Uddin

Abstract: Eigensystem Realization Algorithm (ERA) is a tool that can produce a reduced order model (ROM) from just input-output data of a given system. ERA creates the ROM while kee** the number of internal states to a minimum level. This was first implemented by Juang and Pappa (1984) to analyze the vibration of aerospace structures from impulse response. We reviewed ERA and tested it on single input sin… ▽ More Eigensystem Realization Algorithm (ERA) is a tool that can produce a reduced order model (ROM) from just input-output data of a given system. ERA creates the ROM while kee** the number of internal states to a minimum level. This was first implemented by Juang and Pappa (1984) to analyze the vibration of aerospace structures from impulse response. We reviewed ERA and tested it on single input single output (SISO) system as well as on multiple input single output (MISO) system. ERA prediction agreed with the actual data. Unlike other model reduction techniques (Balanced truncation, balanced proper orthogonal decomposition), ERA works just as fine without the need of the adjoint system, that makes ERA a promising, completely data-driven, thrifty model reduction method. In this work, we propose a modified Eigensystem Realization Algorithm that relies upon an optimally chosen time resolution for the output used and also checks for good performance through frequency analysis. Four examples are discussed: the first two confirm the model generating ability and the last two illustrate its capability to produce a low-dimensional model (for a large scale system) that is much more accurate than the one produced by the traditional ERA. △ Less

Submitted 27 May, 2020; originally announced June 2020.

Comments: 15 pages

Estimating Blood Pressure from Photoplethysmogram Signal and Demographic Features using Machine Learning Techniques

Authors: Moajjem Hossain Chowdhury, Md Nazmul Islam Shuzan, Muhammad E. H. Chowdhury, Zaid B Mahbub, M. Monir Uddin, Amith Khandakar, Mamun Bin Ibne Reaz

Abstract: Hypertension is a potentially unsafe health ailment, which can be indicated directly from the Blood pressure (BP). Hypertension always leads to other health complications. Continuous monitoring of BP is very important; however, cuff-based BP measurements are discrete and uncomfortable to the user. To address this need, a cuff-less, continuous and a non-invasive BP measurement system is proposed us… ▽ More Hypertension is a potentially unsafe health ailment, which can be indicated directly from the Blood pressure (BP). Hypertension always leads to other health complications. Continuous monitoring of BP is very important; however, cuff-based BP measurements are discrete and uncomfortable to the user. To address this need, a cuff-less, continuous and a non-invasive BP measurement system is proposed using Photoplethysmogram (PPG) signal and demographic features using machine learning (ML) algorithms. PPG signals were acquired from 219 subjects, which undergo pre-processing and feature extraction steps. Time, frequency and time-frequency domain features were extracted from the PPG and their derivative signals. Feature selection techniques were used to reduce the computational complexity and to decrease the chance of over-fitting the ML algorithms. The features were then used to train and evaluate ML algorithms. The best regression models were selected for Systolic BP (SBP) and Diastolic BP (DBP) estimation individually. Gaussian Process Regression (GPR) along with ReliefF feature selection algorithm outperforms other algorithms in estimating SBP and DBP with a root-mean-square error (RMSE) of 6.74 and 3.59 respectively. This ML model can be implemented in hardware systems to continuously monitor BP and avoid any critical health conditions due to sudden changes. △ Less

Submitted 7 May, 2020; originally announced May 2020.

Comments: Accepted for publication in Sensor, 14 Figures, 14 Tables

Journal ref: Sensors 2020, 20(11), 3127

Multilayer Layer Graphene Nanoribbon Flash Memory: Analysis of Programming and Erasing Operation

Authors: Nahid M. Hossain, Md Belayat Hossain, Masud H. Chowdhury

Abstract: Flash memory based on floating gate transistor is the most widely used memory technology in modern microelectronic applications. We recently proposed a new concept of multilayer graphene nanoribbon (MLGNR) and carbon nanotube (CNT) based floating gate transistor design for future nanoscale flash memory technology. In this paper, we analyze the tunneling current mechanism in the proposed graphene-C… ▽ More Flash memory based on floating gate transistor is the most widely used memory technology in modern microelectronic applications. We recently proposed a new concept of multilayer graphene nanoribbon (MLGNR) and carbon nanotube (CNT) based floating gate transistor design for future nanoscale flash memory technology. In this paper, we analyze the tunneling current mechanism in the proposed graphene-CNT floating gate transistor. We anticipate that the proposed floating gate transistor would adopt Fowler-Nordheim (FN) tunneling during its programming and erase operations. In this paper, we have investigated the mechanism of tunneling current and the factors that would influence this current and the behavior of the proposed floating gate transistor. The analysis reveals that FN tunneling is a strong function of the high field induced by the control gate, and the thicknesses of the control oxide and the tunnel oxide. △ Less

Submitted 11 August, 2015; originally announced August 2015.

Comments: in IEEE SOCC, Las Vegas, USA, 2014

Analysis of radiation effect on the threshold voltage of flash memory device

Authors: Nahid M. Hossain, Jitendra Koppu, Masud H Chowdhury

Abstract: Flash memory experiences adverse effects due to radiation. These effects can be raised in terms of do**, feature size, supply voltages, layout, shielding. The the operating point shift of the device forced to enter the logically-undefined region and cause upset and data errors under radiation exposure. In this letter, the threshold voltage shift of the floating gate transistor (FGT) is analyzed… ▽ More Flash memory experiences adverse effects due to radiation. These effects can be raised in terms of do**, feature size, supply voltages, layout, shielding. The the operating point shift of the device forced to enter the logically-undefined region and cause upset and data errors under radiation exposure. In this letter, the threshold voltage shift of the floating gate transistor (FGT) is analyzed by a mathematical model. △ Less

Submitted 11 August, 2015; originally announced August 2015.

Journal ref: IEEE International Symposium on Circuits and Systems (ISCAS), pp. 2896-2899, Lisbon, Portugal, 2015

Multilayer Graphene Nanoribbon and Carbon Nanotube based Floating Gate Transistor for Nonvolatile Flash Memory

Authors: Nahid M. Hossain, Masud H. Chowdhury

Abstract: Floating gate transistor is the basic building block of non-volatile flash memory, which is one of the most widely used memory gadgets in modern micro and nano electronic applications. Recently there has been a surge of interest to introduce a new generation of memory devices using graphene nanotechnology. In this paper we present a new floating gate transistor (FGT) design based on multilayer gra… ▽ More Floating gate transistor is the basic building block of non-volatile flash memory, which is one of the most widely used memory gadgets in modern micro and nano electronic applications. Recently there has been a surge of interest to introduce a new generation of memory devices using graphene nanotechnology. In this paper we present a new floating gate transistor (FGT) design based on multilayer graphene nanoribbon (MLGNR) and carbon nanotube (CNT). In the proposed FGT a multilayer structure of graphene nanoribbon (GNR) would be used as the channel of the field effect transistor (FET) and a layer of CNTs would be used as the floating gate. We have performed an analysis of the charge accumulation mechanism in the floating gate and its dependence on the applied terminal voltages. Based on our analysis we have observed that proposed graphene based floating gate transistor could be operated at a reduced voltage compared to conventional silicon based floating gate devices. We have presented detail analysis of the operation and the programming and erasing processes of the proposed FGT, dependency of the programming and erasing current density on different parameters, impact of scaling the thicknesses of the control and tunneling oxides. These analysis are done based on the capacitance model of the device. △ Less

Submitted 11 August, 2015; originally announced August 2015.

Journal ref: ACM Journal on Emerging Technologies in Computing Systems (JETC), Volume 12, Issue 1, Article 2, July 2015

Improved Model for Wire-Length Estimation in Stochastic Wiring Distribution

Authors: Mohamed S. Hefeida, Masud H. Chowdhury

Abstract: This paper presents a pair of improved stochastic wiring distribution model for better estimation of on-chip wire lengths. The proposed models provide 28 - 50% reduction in error when estimating the average on-chip wire length compared to the estimation using the existing models. The impact of Rent's exponent on the average wire length estimation is also investigated to demonstrate limitations of… ▽ More This paper presents a pair of improved stochastic wiring distribution model for better estimation of on-chip wire lengths. The proposed models provide 28 - 50% reduction in error when estimating the average on-chip wire length compared to the estimation using the existing models. The impact of Rent's exponent on the average wire length estimation is also investigated to demonstrate limitations of the approximations used in some of the current models. To improve the approximations of the model a new threshold for Rent's constant is recommended. Simulation results demonstrate that proposed models with the new threshold reduce the error of estimation by 38 to 75 percent compared to the previous works. △ Less

Submitted 19 February, 2015; originally announced February 2015.

Graphene Nanotechnology for the Next Generation Nonvolatile Memory

Authors: Md. Nahid Hossain, Masud H Chowdhury

Abstract: As conventional silicon technology is approaching its fundamental material and physical limits with continuous scaling, there is a growing push to look for new platform to design memory circuits for nanoelectronic applications. In this paper we explore new design concept of nonvolatile memory based on graphene nanotechnology. The investigation focuses on two forms of graphene based field effect tr… ▽ More As conventional silicon technology is approaching its fundamental material and physical limits with continuous scaling, there is a growing push to look for new platform to design memory circuits for nanoelectronic applications. In this paper we explore new design concept of nonvolatile memory based on graphene nanotechnology. The investigation focuses on two forms of graphene based field effect transistor (FET) carbon nanotube FET (CNTFET) and graphene nanoribbon FET (GNRFET). The analysis reveals that GNRFET with a high trap** capable oxide layer is suitable for ultra high ensity nonvolatile memory. △ Less

Submitted 30 August, 2013; originally announced August 2013.

Comments: Graphene Nanotechnology for Nonvolatile Memory