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Dimensional crossover and symmetry transformation of the charge density waves in VSe2
Authors:
P. Chen,
Y. -H. Chan,
R. -Y. Liu,
H. T. Zhang,
Q. Gao,
A. -V. Fedorov,
M. Y. Chou,
T. -C. Chiang
Abstract:
Collective phenomena in solids can be sensitive to the dimensionality of the system; a case of special interest is VSe2, which shows a (r7 x r3) charge density wave (CDW) in the single layer with the three-fold symmetry in the normal phase spontaneously broken, in contrast to the (4 x 4) in-plane CDW in the bulk. Angle-resolved photoemission spectroscopy (ARPES) from VSe2 ranging from a single lay…
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Collective phenomena in solids can be sensitive to the dimensionality of the system; a case of special interest is VSe2, which shows a (r7 x r3) charge density wave (CDW) in the single layer with the three-fold symmetry in the normal phase spontaneously broken, in contrast to the (4 x 4) in-plane CDW in the bulk. Angle-resolved photoemission spectroscopy (ARPES) from VSe2 ranging from a single layer to the bulk reveals the evolution of the electronic structure including the Fermi surface contours and the CDW gap. At a thickness of two layers, the ARPES maps are already nearly bulklike, but the transition temperature TC for the (4 x 4) CDW is much higher than the bulk value of 110 K. These results can be understood as a result of dimensional crossover of phonon instability driven by a competition of nesting vectors. Our study provides key insights into the CDW mechanisms and offers a perspective in the search and control of emergent phases in quantum materials.
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Submitted 20 February, 2023;
originally announced February 2023.
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Unique gap structure and symmetry of the charge density wave in single-layer VSe$_2$
Authors:
P. Chen,
W. -W. Pai,
Y. -H. Chan,
V. Madhavan,
M. Y. Chou,
S. -K. Mo,
A. -V. Fedorov,
T. -C. Chiang
Abstract:
Single layers of transition metal dichalcogenides (TMDCs) are excellent candidates for electronic applications beyond the graphene platform; many of them exhibit novel properties including charge density waves (CDWs) and magnetic ordering. CDWs in these single layers are generally a planar projection of the corresponding bulk CDWs because of the quasi-two-dimensional nature of TMDCs; a different C…
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Single layers of transition metal dichalcogenides (TMDCs) are excellent candidates for electronic applications beyond the graphene platform; many of them exhibit novel properties including charge density waves (CDWs) and magnetic ordering. CDWs in these single layers are generally a planar projection of the corresponding bulk CDWs because of the quasi-two-dimensional nature of TMDCs; a different CDW symmetry is unexpected. We report herein the successful creation of pristine single-layer VSe$_2$, which shows a ($\sqrt7 \times \sqrt3$) CDW in contrast to the (4 $\times$ 4) CDW for the layers in bulk VSe$_2$. Angle-resolved photoemission spectroscopy (ARPES) from the single layer shows a sizable ($\sqrt7 \times \sqrt3$) CDW gap of $\sim$100 meV at the zone boundary, a 220 K CDW transition temperature twice the bulk value, and no ferromagnetic exchange splitting as predicted by theory. This robust CDW with an exotic broken symmetry as the ground state is explained via a first-principles analysis. The results illustrate a unique CDW phenomenon in the two-dimensional limit.
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Submitted 14 November, 2018;
originally announced November 2018.
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Quantum-spin-Hall insulator with a large gap: single-layer 1T' WSe$_2$
Authors:
P. Chen,
W. -W. Pai,
Y. -H. Chan,
W. -L. Sun,
C. -Z. Xu,
D. -S. Lin,
M. Y. Chou,
A. -V. Fedorov,
T. -C. Chiang
Abstract:
Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum spin Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for room-temperature applications has proven difficult. Here, we report the successful growth on bilayer graphene of a quasi-freestanding WSe$_2$ single layer with th…
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Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum spin Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for room-temperature applications has proven difficult. Here, we report the successful growth on bilayer graphene of a quasi-freestanding WSe$_2$ single layer with the 1T' structure that does not exist in the bulk form of WSe$_2$. Using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we observed a gap of 129 meV in the 1T' layer and an in-gap edge state located near the layer boundary. The system's 2D TI characters are confirmed by first-principles calculations. The observed gap diminishes with do** by Rb adsorption, ultimately leading to an insulator-semimetal transition. The discovery of this large-gap 2D TI with a tunable band gap opens up opportunities for develo** advanced nanoscale systems and quantum devices.
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Submitted 21 May, 2018;
originally announced May 2018.
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Emergence of charge density waves and a pseudogap in single-layer TiTe2
Authors:
P. Chen,
Woei Wu Pai,
Y. -H. Chan,
A. Takayama,
C. -Z. Xu,
A. Karn,
S. Hasegawa,
M. Y. Chou,
S. -K. Mo,
A. -V. Fedorov,
T. -C. Chiang
Abstract:
Two-dimensional materials constitute a promising platform for develo** nanoscale devices and systems. Their physical properties can be very different from those of the corresponding three-dimensional materials because of extreme quantum confinement and dimensional reduction. Here we report a study of TiTe$_2$ from the single-layer to the bulk limit. Using angle-resolved photoemission spectroscop…
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Two-dimensional materials constitute a promising platform for develo** nanoscale devices and systems. Their physical properties can be very different from those of the corresponding three-dimensional materials because of extreme quantum confinement and dimensional reduction. Here we report a study of TiTe$_2$ from the single-layer to the bulk limit. Using angle-resolved photoemission spectroscopy and scanning tunneling microscopy and spectroscopy, we observed the emergence of a (2 x 2) charge density wave order in single-layer TiTe$_2$ with a transition temperature of 92 $\pm$ 3 K. Also observed was a pseudogap of about 28 meV at the Fermi level at 4.2 K. Surprisingly, no charge density wave transitions were observed in 2- and multi-layer TiTe$_2$, despite the quasi-two-dimensional nature of the material in the bulk. The unique charge density wave phenomenon in the single layer raises intriguing questions that challenge the prevailing thinking about the mechanisms of charge density wave formation.
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Submitted 14 May, 2018;
originally announced May 2018.
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Strain Engineering a $4a\times\sqrt{3}a$ Charge Density Wave Phase in Transition Metal Dichalcogenide 1T-VSe$_2$
Authors:
Duming Zhang,
Jeonghoon Ha,
Hongwoo Baek,
Yang-Hao Chan,
Fabian D. Natterer,
Alline F. Myers,
Joshua D. Schumacher,
William G. Cullen,
Albert V. Davydov,
Young Kuk,
M. Y. Chou,
Nikolai B. Zhitenev,
Joseph A. Stroscio
Abstract:
We report a rectangular charge density wave (CDW) phase in strained 1T-VSe$_2$ thin films synthesized by molecular beam epitaxy on c-sapphire substrates. The observed CDW structure exhibits an unconventional rectangular 4a{\times}{\sqrt{3a}} periodicity, as opposed to the previously reported hexagonal $4a\times4a$ structure in bulk crystals and exfoliated thin layered samples. Tunneling spectrosco…
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We report a rectangular charge density wave (CDW) phase in strained 1T-VSe$_2$ thin films synthesized by molecular beam epitaxy on c-sapphire substrates. The observed CDW structure exhibits an unconventional rectangular 4a{\times}{\sqrt{3a}} periodicity, as opposed to the previously reported hexagonal $4a\times4a$ structure in bulk crystals and exfoliated thin layered samples. Tunneling spectroscopy shows a strong modulation of the local density of states of the same $4a\times\sqrt{3}a$ CDW periodicity and an energy gap of $2Δ_{CDW}=(9.1\pm0.1)$ meV. The CDW energy gap evolves into a full gap at temperatures below 500 mK, indicating a transition to an insulating phase at ultra-low temperatures. First-principles calculations confirm the stability of both $4a\times4a$ and $4a\times\sqrt{3}a$ structures arising from soft modes in the phonon dispersion. The unconventional structure becomes preferred in the presence of strain, in agreement with experimental findings.
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Submitted 20 July, 2017;
originally announced July 2017.
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Topological semi-metals with line nodes and drumhead surface states
Authors:
Y. -H. Chan,
Ching-Kai Chiu,
M. Y. Chou,
Andreas P. Schnyder
Abstract:
In an ordinary three-dimensional metal the Fermi surface forms a two-dimensional closed sheet separating the filled from the empty states. Topological semimetals, on the other hand, can exhibit protected one-dimensional Fermi lines or zero-dimensional Fermi points, which arise due to an intricate interplay between symmetry and topology of the electronic wavefunctions. Here, we study how reflection…
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In an ordinary three-dimensional metal the Fermi surface forms a two-dimensional closed sheet separating the filled from the empty states. Topological semimetals, on the other hand, can exhibit protected one-dimensional Fermi lines or zero-dimensional Fermi points, which arise due to an intricate interplay between symmetry and topology of the electronic wavefunctions. Here, we study how reflection symmetry, time-reversal symmetry, SU(2) spin-rotation symmetry, and inversion symmetry lead to the topological protection of line nodes in three-dimensional semi-metals. We obtain the crystalline invariants that guarantee the stability of the line nodes in the bulk and show that a quantized Berry phase leads to the appearance of protected surfaces states with a nearly flat dispersion. By deriving a relation between the crystalline invariants and the Berry phase, we establish a direct connection between the stability of the line nodes and the topological surface states. As a representative example of a topological semimetal with line nodes, we consider Ca$_3$P$_2$ and discuss the topological properties of its Fermi line in terms of a low-energy effective theory and a tight-binding model, derived from ab initio DFT calculations. Due to the bulk-boundary correspondence, Ca$_3$P$_2$ displays nearly dispersionless surface states, which take the shape of a drumhead. These surface states could potentially give rise to novel topological response phenomena and provide an avenue for exotic correlation physics at the surface.
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Submitted 27 October, 2015; v1 submitted 9 October, 2015;
originally announced October 2015.
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Stability and electronic properties of two-dimensional silicene and germanene on graphene
Authors:
Yongmao Cai,
Chih-Piao Chuu,
C. M. Wei,
M. Y. Chou
Abstract:
We present first-principles calculations of silicene/graphene and germanene/graphene bilayers. Various supercell models are constructed in the calculations in order to reduce the strain of the lattice-mismatched bilayer systems. Our energetics analysis and electronic structure results suggest that graphene can be used as a substrate to synthesize monolayer silicene and germanene. Multiple phases o…
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We present first-principles calculations of silicene/graphene and germanene/graphene bilayers. Various supercell models are constructed in the calculations in order to reduce the strain of the lattice-mismatched bilayer systems. Our energetics analysis and electronic structure results suggest that graphene can be used as a substrate to synthesize monolayer silicene and germanene. Multiple phases of single crystalline silicene and germanene with different orientations relative to the substrate could coexist at room temperature. The weak interaction between the overlayer and the substrate preserves the low-buckled structure of silicene and germanene, as well as their linear energy bands. The gap induced by breaking the sublattice symmetry in silicene on graphene can be up to 57 meV.
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Submitted 9 December, 2013;
originally announced December 2013.
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Charge transport through graphene junctions with wetting metal leads
Authors:
Salvador Barraza-Lopez,
Markus Kindermann,
M. Y. Chou
Abstract:
Graphene is believed to be an excellent candidate material for next-generation electronic devices. However, one needs to take into account the nontrivial effect of metal contacts in order to precisely control the charge injection and extraction processes. We have performed transport calculations for graphene junctions with wetting metal leads (metal leads that bind covalently to graphene) using no…
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Graphene is believed to be an excellent candidate material for next-generation electronic devices. However, one needs to take into account the nontrivial effect of metal contacts in order to precisely control the charge injection and extraction processes. We have performed transport calculations for graphene junctions with wetting metal leads (metal leads that bind covalently to graphene) using nonequilibrium Green's functions and density functional theory. Quantitative information is provided on the increased resistance with respect to ideal contacts and on the statistics of current fluctuations. We find that charge transport through the studied two-terminal graphene junction with Ti contacts is pseudo-diffusive up to surprisingly high energies.
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Submitted 6 October, 2013;
originally announced October 2013.
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Electron-Phonon Coupling in Two-Dimensional Silicene and Germanene
Authors:
Jia-An Yan,
Ryan Stein,
David M. Schaefer,
Xiao-Qian Wang,
M. Y. Chou
Abstract:
Following the work in graphene, we report a first-principles study of electron-phonon coupling (EPC) in low-buckled (LB) monolayer silicene and germanene. Despite of the similar honeycomb atomic arrangement and linear band dispersion, the EPC matrix-element squares of the $Γ$-$E_g$ and K-$A_1$ modes in silicene are only about 50% of those in graphene. However, the smaller Fermi velocity in silicen…
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Following the work in graphene, we report a first-principles study of electron-phonon coupling (EPC) in low-buckled (LB) monolayer silicene and germanene. Despite of the similar honeycomb atomic arrangement and linear band dispersion, the EPC matrix-element squares of the $Γ$-$E_g$ and K-$A_1$ modes in silicene are only about 50% of those in graphene. However, the smaller Fermi velocity in silicene compensates this reduction by providing a larger joint electronic density of states near the Dirac point. We predict that Kohn anomalies associated with these two optical modes are significant in silicene. In addition, the EPC-induced frequency shift and linewidth of the Raman-active $Γ$-$E_g$ mode in silicene are calculated as a function of do**. The results are comparable to those in graphene, indicating a similar non-adiabatic dynamical origin. In contrast, the EPC in germanene is found to be much reduced.
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Submitted 21 August, 2013;
originally announced August 2013.
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Optical Phonon Anomaly in Bilayer Graphene with Ultrahigh Carrier Densities
Authors:
Jia-An Yan,
K. Varga,
M. Y. Chou
Abstract:
Electron-phonon coupling (EPC) in bilayer graphene (BLG) at different do** levels is studied by first-principles calculations. The phonons considered are long-wavelength high-energy symmetric (S) and antisymmetric (AS) optical modes. Both are shown to have distinct EPC-induced phonon linewidths and frequency shifts as a function of the Fermi level $E_F$. We find that the AS mode has a strong cou…
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Electron-phonon coupling (EPC) in bilayer graphene (BLG) at different do** levels is studied by first-principles calculations. The phonons considered are long-wavelength high-energy symmetric (S) and antisymmetric (AS) optical modes. Both are shown to have distinct EPC-induced phonon linewidths and frequency shifts as a function of the Fermi level $E_F$. We find that the AS mode has a strong coupling with the lowest two conduction bands when the Fermi level $E_F$ is nearly 0.5 eV above the neutrality point, giving rise to a giant linewidth (more than 100 cm$^{-1}$) and a significant frequency softening ($\sim$ 60 cm$^{-1}$). Our \emph{ab initio} calculations show that the origin of the dramatic change arises from the unusual band structure in BLG. The results highlight the band structure effects on the EPC in BLG in the high carrier density regime.
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Submitted 6 April, 2012;
originally announced April 2012.
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Lattice Vibrational Modes and their Frequency Shifts in Semiconductor Nanowires
Authors:
Li Yang,
M. Y. Chou
Abstract:
We have performed first-principles calculations to study the lattice vibrational modes and their Raman activities in silicon nanowires (SiNWs). Two types of characteristic vibrational modes are examined: high-frequency optical modes and low-frequency confined modes. Their frequencies have opposite size dependence with a red shift for the optical modes and a blue shift for the confined modes as the…
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We have performed first-principles calculations to study the lattice vibrational modes and their Raman activities in silicon nanowires (SiNWs). Two types of characteristic vibrational modes are examined: high-frequency optical modes and low-frequency confined modes. Their frequencies have opposite size dependence with a red shift for the optical modes and a blue shift for the confined modes as the diameter of SiNWs decreases. In addition, our calculations show that these vibrational modes can be detected by Raman scattering measurements, providing an efficient way to estimate the size of SiNWs.
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Submitted 28 August, 2011;
originally announced August 2011.
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Enhanced Optical Conductivity Induced by Surface States in ABC-stacked Few-Layer Graphene
Authors:
Jia-An Yan,
W. Y. Ruan,
M. Y. Chou
Abstract:
The surface states of ABC-stacked few-layer graphene (FLG) are studied based on density-functional theory. These states form flat bands near the Fermi level, with the k-space range increasing with the layer number. Based on a tight-binding model, the characteristics of these surface states and their evolution with respect to the number of layers are examined. The infrared optical conductivity is t…
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The surface states of ABC-stacked few-layer graphene (FLG) are studied based on density-functional theory. These states form flat bands near the Fermi level, with the k-space range increasing with the layer number. Based on a tight-binding model, the characteristics of these surface states and their evolution with respect to the number of layers are examined. The infrared optical conductivity is then calculated within the single-particle excitation picture. We show that the surface states introduce unique peaks at around 0.3 eV in the optical conductivity spectra of ABC-stacked FLG when the polarization is parallel to the sheets, in good agreement with recent experimental measurement. Furthermore, as the layer number increases, the absorption amplitude is greatly enhanced and the peak position red-shifts, which provides a feasible way to identify the number of layers for ABC-stacked FLG using optical conductivity measurements.
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Submitted 2 June, 2011;
originally announced June 2011.
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Structural and Electronic Properties of Oxidized Graphene
Authors:
Jia-An Yan,
Lede Xian,
M. Y. Chou
Abstract:
We have systematically investigated the effect of oxidation on the structural and electronic properties of graphene based on first-principles calculations. Energetically favorable atomic configurations and building blocks are identified, which contain epoxide and hydroxyl groups in close proximity with each other. Different arrangements of these units yield an LDA band gap over a range of a few…
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We have systematically investigated the effect of oxidation on the structural and electronic properties of graphene based on first-principles calculations. Energetically favorable atomic configurations and building blocks are identified, which contain epoxide and hydroxyl groups in close proximity with each other. Different arrangements of these units yield an LDA band gap over a range of a few eV. These results suggest the possibility of creating and tuning the band gap in graphene by varying the oxidation level and the relative amount of epoxide and hydroxyl functional groups on the surface.
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Submitted 21 August, 2009;
originally announced August 2009.
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Phonon dispersions and vibrational properties of monolayer, bilayer, and trilayer graphene
Authors:
Jia-An Yan,
W. Y. Ruan,
M. Y. Chou
Abstract:
The phonon dispersions of monolayer and few-layer graphene (AB bilayer, ABA and ABC trilayers) are investigated using the density-functional perturbation theory (DFPT). Compared with the monolayer, the optical phonon $E_{2g}$ mode at $Γ$ splits into two and three doubly degenerate branches for bilayer and trilayer graphene, respectively, due to the weak interlayer coupling. These modes are of va…
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The phonon dispersions of monolayer and few-layer graphene (AB bilayer, ABA and ABC trilayers) are investigated using the density-functional perturbation theory (DFPT). Compared with the monolayer, the optical phonon $E_{2g}$ mode at $Γ$ splits into two and three doubly degenerate branches for bilayer and trilayer graphene, respectively, due to the weak interlayer coupling. These modes are of various symmetry and exhibit different sensitivity to either Raman or infrared (IR) measurements (or both). The splitting is found to be 5 cm$^{-1}$ for bilayer and 2 to 5 cm$^{-1}$ for trilayer graphene. The interlayer coupling is estimated to be about 2 cm$^{-1}$. We found that the highest optical modes at K move up by about 12 cm$^{-1}$ for bilayer and 18 cm$^{-1}$ for trilayer relative to monolayer graphene. The atomic displacements of these optical eigenmodes are analyzed.
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Submitted 20 January, 2009;
originally announced January 2009.
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Electron-Phonon Interactions for Optical Phonon Modes in Few-Layer Graphene
Authors:
Jia-An Yan,
W. Y. Ruan,
M. Y. Chou
Abstract:
We present a first-principles study of the electron-phonon (e-ph) interactions and their contributions to the linewidths for the optical phonon modes at $Γ$ and K in one to three-layer graphene. It is found that due to the interlayer coupling and the stacking geometry, the high-frequency optical phonon modes in few-layer graphene couple with different valence and conduction bands, giving rise to…
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We present a first-principles study of the electron-phonon (e-ph) interactions and their contributions to the linewidths for the optical phonon modes at $Γ$ and K in one to three-layer graphene. It is found that due to the interlayer coupling and the stacking geometry, the high-frequency optical phonon modes in few-layer graphene couple with different valence and conduction bands, giving rise to different e-ph interaction strengths for these modes. Some of the multilayer optical modes derived from the $Γ$-$E_{2g}$ mode of monolayer graphene exhibit slightly higher frequencies and much reduced linewidths. In addition, the linewidths of K-$A'_1$ related modes in multilayers depend on the stacking pattern and decrease with increasing layer numbers.
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Submitted 20 January, 2009;
originally announced January 2009.
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Electronic and Vibrational Properties of gamma-AlH3
Authors:
Yan Wang,
Jia-An Yan,
M. Y. Chou
Abstract:
Aluminum hydride (alane) AlH_3 is an important material in hydrogen storage applications. It is known that AlH_3 exists in multiply forms of polymorphs, where $α$-AlH_3 is found to be the most stable with a hexagonal structure. Recent experimental studies on $γ$-AlH_3 reported an orthorhombic structure with a unique double-bridge bond between certain Al and H atoms. This was not found in $α$-AlH…
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Aluminum hydride (alane) AlH_3 is an important material in hydrogen storage applications. It is known that AlH_3 exists in multiply forms of polymorphs, where $α$-AlH_3 is found to be the most stable with a hexagonal structure. Recent experimental studies on $γ$-AlH_3 reported an orthorhombic structure with a unique double-bridge bond between certain Al and H atoms. This was not found in $α$-AlH_3 or other polymorphs. Using density functional theory, we have investigated the energetics, and the structural, electronic, and phonon vibrational properties for the newly reported $γ$-AlH_3 structure. The current calculation concludes that $γ$-AlH_3 is less stable than $α$-AlH_3 by 2.1 KJ/mol. Interesting binding features associated with the unique geometry of $γ$-AlH3 are discussed from the calculated electronic properties and phonon vibrational modes. The binding of H-s with higher energy Al-p,d orbitals is enhanced within the double-bridge arrangement, giving rise to a higher electronic energy for the system. Distinguishable new features in the vibrational spectrum of $γ$-AlH_3 were attributed to the double-bridge and hexagonal-ring structures.
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Submitted 30 July, 2007;
originally announced July 2007.
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Beyond the local approximation to exchange and correlation: the role of the Laplacian of the density in the energy density of Si
Authors:
Antonio C. Cancio,
M. Y. Chou
Abstract:
We model the exchange-correlation (XC) energy density of the Si crystal and atom as calculated by variational Monte Carlo (VMC) methods with a gradient analysis beyond the local density approximation (LDA). We find the Laplacian of the density to be an excellent predictor of the discrepancy between VMC and LDA energy densities in each system. A simple Laplacian-based correction to the LDA energy…
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We model the exchange-correlation (XC) energy density of the Si crystal and atom as calculated by variational Monte Carlo (VMC) methods with a gradient analysis beyond the local density approximation (LDA). We find the Laplacian of the density to be an excellent predictor of the discrepancy between VMC and LDA energy densities in each system. A simple Laplacian-based correction to the LDA energy density is developed by means of a least square fit to the VMC XC energy density for the crystal, which fits the homogeneous electron gas and Si atom without further effort.
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Submitted 17 June, 2005;
originally announced June 2005.
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Comparative study of density functional theories of the exchange-correlation hole and energy in silicon
Authors:
A. C. Cancio,
M. Y. Chou,
Randolph Q. Hood
Abstract:
We present a detailed study of the exchange-correlation hole and exchange-correlation energy per particle in the Si crystal as calculated by the Variational Monte Carlo method and predicted by various density functional models. Nonlocal density averaging methods prove to be successful in correcting severe errors in the local density approximation (LDA) at low densities where the density changes…
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We present a detailed study of the exchange-correlation hole and exchange-correlation energy per particle in the Si crystal as calculated by the Variational Monte Carlo method and predicted by various density functional models. Nonlocal density averaging methods prove to be successful in correcting severe errors in the local density approximation (LDA) at low densities where the density changes dramatically over the correlation length of the LDA hole, but fail to provide systematic improvements at higher densities where the effects of density inhomogeneity are more subtle. Exchange and correlation considered separately show a sensitivity to the nonlocal semiconductor crystal environment, particularly within the Si bond, which is not predicted by the nonlocal approaches based on density averaging. The exchange hole is well described by a bonding orbital picture, while the correlation hole has a significant component due to the polarization of the nearby bonds, which partially screens out the anisotropy in the exchange hole.
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Submitted 17 May, 2001; v1 submitted 24 January, 2001;
originally announced January 2001.
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Theoretical study of hydrogen-covered diamond (100) surfaces: A chemical potential analysis
Authors:
Suklyun Hong,
M. Y. Chou
Abstract:
The bare and hydrogen-covered diamond (100) surfaces were investigated through pseudopotential density-functional calculations within the local-density approximation. Different coverages, ranging from one to two, were considered. These corresponded to different structures including 1x1, 2x1, and 3x1, and different hydrogen-carbon arrangements including monohydride, dihydride, and configurations…
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The bare and hydrogen-covered diamond (100) surfaces were investigated through pseudopotential density-functional calculations within the local-density approximation. Different coverages, ranging from one to two, were considered. These corresponded to different structures including 1x1, 2x1, and 3x1, and different hydrogen-carbon arrangements including monohydride, dihydride, and configurations in between. The formation energy of each phase was expressed as a function of hydrogen chemical potential. As the chemical potential increased, the stable phase successively changed from bare 2x1 to (2x1):H, to (3x1):1.33H, and finally to the canted (1x1):2H. Setting the chemical potential at the energy per hydrogen in H$_2$ and in a free atom gave the (3x1):1.33H and the canted (1x1):2H phase as the most stable one, respectively. However, after comparing with the formation energy of CH$_4$, only the (2x1):H and (3x1):1.33H phases were stable against spontaneous formation of CH$_4$. The former existed over a chemical potential range ten times larger than the latter, which may explain why the latter, despite of having a low energy, has not been observed so far. Finally, the vibrational energies of the C-H stretch mode were calculated for the (2x1):H phase.
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Submitted 1 July, 1996;
originally announced July 1996.
