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Quantification of spin-charge interconversion in highly resistive sputtered Bi$_x$Se$_{1-x}$ with non-local spin valves
Authors:
Isabel C. Arango,
Won Young Choi,
Van Tuong Pham,
Inge Groen,
Diogo C. Vaz,
Punyashloka Debashis,
Hai Li,
Mahendra DC,
Kaan Oguz,
Andrey Chuvilin,
Luis E. Hueso,
Ian A. Young,
Fèlix Casanova
Abstract:
The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion efficiency. One of the most promising candidates in this regard is sputtered Bi$_x$Se$_{1-x}$. Although there are several techniques to quantify spin-charge interconversion, to date reported values for sputtered Bi$_x$Se…
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The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion efficiency. One of the most promising candidates in this regard is sputtered Bi$_x$Se$_{1-x}$. Although there are several techniques to quantify spin-charge interconversion, to date reported values for sputtered Bi$_x$Se$_{1-x}$ have often been overestimated due to spurious effects related to local currents combined with a lack of understanding of the effect of the interfaces and the use of approximations for unknown parameters, such as the spin diffusion length. In the present study, non-local spin valves are used to inject pure spin currents into Bi$_x$Se$_{1-x}$, allowing us to directly obtain its spin diffusion length as well as its spin Hall angle, from 10 K up to 300 K. These values, which are more accurate than those previously reported in sputtered Bi$_x$Se$_{1-x}$, evidence that the efficiency of this material is not exceptional. Indeed, the figure of merit for spin-charge interconversion, given by the product of these two parameters, is slightly under 1 nm. Our work demonstrates the importance of considering all material parameters and interfaces when quantifying the spin transport properties of materials with strong spin-orbit coupling.
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Submitted 6 November, 2023;
originally announced November 2023.
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Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices
Authors:
Diogo C. Vaz,
Chia-Ching Lin,
John J. Plombon,
Won Young Choi,
Inge Groen,
Isabel C. Arango,
Andrey Chuvilin,
Luis E. Hueso,
Dmitri E. Nikonov,
Hai Li,
Punyashloka Debashis,
Scott B. Clendenning,
Tanay A. Gosavi,
Yen-Lin Huang,
Bhagwati Prasad,
Ramamoorthy Ramesh,
Aymeric Vecchiola,
Manuel Bibes,
Karim Bouzehouane,
Stephane Fusil,
Vincent Garcia,
Ian A. Young,
Fèlix Casanova
Abstract:
With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still orders of magnitude above the expected values. Alternatively, magnetoelectric materials are predicted to enable low-power control of magnetization, a rel…
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With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still orders of magnitude above the expected values. Alternatively, magnetoelectric materials are predicted to enable low-power control of magnetization, a relatively unexplored pathway with sparse results at a device level. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO$_3$ and ferromagnetic CoFe, for the writing, and spin-to-charge current conversion between CoFe and Pt, for the reading. Unlike other current-based spintronic devices, magnetization writing is driven solely by voltage pulses. We show that, upon electrical switching of the BiFeO$_3$, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. The voltage-induced switching is supported through a combination of piezoresponse, magnetic force microscopy, and scanning nitrogen-vacancy magnetometry, where magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO$_3$. This study constitutes the building block for magnetoelectric spin-orbit logic, as well as a new avenue for low-power beyond-CMOS technologies.
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Submitted 23 February, 2023;
originally announced February 2023.
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Spin-to-charge conversion by spin pum** in sputtered polycrystalline Bi$_x$Se$_{1-x}$
Authors:
Isabel C Arango,
Alberto Anadón,
Silvestre Novoa,
Van Tuong Pham,
Won Young Choi,
Junior Alegre,
Laurent Badie,
Andrey Chuvilin,
Sébastien Petit-Watelot,
Luis E Hueso,
Fèlix Casanova,
Juan-Carlos Rojas-Sánchez
Abstract:
Topological materials are of high interest due to the promise to obtain low power and fast memory devices based on efficient spin-orbit torque switching or spin-orbit magnetic state read-out. In particular, sputtered polycrystalline Bi$_x$Se$_{1-x}$ is one of the materials with more potential for this purpose since it is relatively easy to fabricate and has been reported to have a very high spin H…
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Topological materials are of high interest due to the promise to obtain low power and fast memory devices based on efficient spin-orbit torque switching or spin-orbit magnetic state read-out. In particular, sputtered polycrystalline Bi$_x$Se$_{1-x}$ is one of the materials with more potential for this purpose since it is relatively easy to fabricate and has been reported to have a very high spin Hall angle. We study the spin-to-charge conversion in Bi$_x$Se$_{1-x}$ using the spin pum** technique coming from the ferromagnetic resonance in a contiguous permalloy thin film. We put a special emphasis on the interfacial properties of the system. Our results show that the spin Hall angle of Bi$_x$Se$_{1-x}$ has an opposite sign to the one of Pt. The charge current arising from the spin-to-charge conversion is, in contrast, lower than Pt by more than one order of magnitude. We ascribe this to the interdiffusion of Bi$_x$Se$_{1-x}$ and permalloy and the changes in chemical composition produced by this effect, which is an intrinsic characteristic of the system and is not considered in many other studies.
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Submitted 16 June, 2023; v1 submitted 24 December, 2022;
originally announced December 2022.
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Emergence of large spin-charge interconversion at an oxidized Cu/W interface
Authors:
Inge Groen,
Van Tuong Pham,
Stefan Ilić,
Won Young Choi,
Andrey Chuvilin,
Edurne Sagasta,
Diogo C. Vaz,
Isabel C. Arango,
Nerea Ontoso,
F. Sebastian Bergeret,
Luis E. Hueso,
Ilya V. Tokatly,
Fèlix Casanova
Abstract:
Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such as the magnetoelectric spin-orbit (MESO) logic, interfaces are crucial elements as they can prohibit or promote spin flow in a device as well as possess spin-orbit coupling resulting in interfacial SCI. Here, we study t…
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Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such as the magnetoelectric spin-orbit (MESO) logic, interfaces are crucial elements as they can prohibit or promote spin flow in a device as well as possess spin-orbit coupling resulting in interfacial SCI. Here, we study the origin of SCI in a Py/Cu/W lateral spin valve and quantify its efficiency. An exhaustive characterization of the interface between Cu and W electrodes uncovers the presence of an oxidized layer (WO$_x$). We determine that the SCI occurs at the Cu/WO$_x$ interface with a temperature-independent interfacial spin-loss conductance of $G_{||} \approx$ 20 $\times$ 10$^{13} Ω^{-1}m^{-2}$ and an interfacial spin-charge conductivity $σ_{SC}=-$1610 $Ω^{-1}cm^{-1}$ at 10 K ($-$830 $Ω^{-1}cm^{-1}$ at 300 K). This corresponds to an efficiency given by the inverse Edelstein length $λ_{IEE}=-$0.76 nm at 10 K ($-$0.4 nm at 300 K), which is remarkably larger than in metal/metal and metal/oxide interfaces and bulk heavy metals. The large SCI efficiency at such an oxidized interface is a promising candidate for the magnetic readout in MESO logic devices.
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Submitted 16 November, 2022;
originally announced November 2022.
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All-electrical spin-to-charge conversion in sputtered Bi$_x$Se$_{1-x}$
Authors:
Won Young Choi,
Isabel C. Arango,
Van Tuong Pham,
Diogo C. Vaz,
Haozhe Yang,
Inge Groen,
Chia-Ching Lin,
Emily S. Kabir,
Kaan Oguz,
Punyashloka Debashis,
John J. Plombon,
Hai Li,
Dmitri E. Nikonov,
Andrey Chuvilin,
Luis E. Hueso,
Ian A. Young,
Fèlix Casanova
Abstract:
One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency. Although intermixing at the junction of two materials is a widely occurring phenomenon, its influence on material characterization and the estimation of spin-to-charg…
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One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency. Although intermixing at the junction of two materials is a widely occurring phenomenon, its influence on material characterization and the estimation of spin-to-charge conversion efficiencies is easily neglected or underestimated. Here, we demonstrate all electrical spin-to-charge conversion in Bi$_x$Se$_{1-x}$ nanodevices and show how the conversion efficiency can be overestimated by tens of times depending on the adjacent metal used as a contact. We attribute this to the intermixing-induced compositional change and the properties of a polycrystal that lead to drastic changes in resistivity and spin Hall angle. Strategies to improve the spin-to-charge conversion signal in similar structures for functional devices are discussed.
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Submitted 18 October, 2022;
originally announced October 2022.
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Reliability of spin-to-charge conversion measurements in graphene-based lateral spin valves
Authors:
C. K. Safeer,
Franz Herling,
Won Young Choi,
Nerea Ontoso,
Josep Ingla-Aynés,
Luis E. Hueso,
Fèlix Casanova
Abstract:
Understanding spin physics in graphene is crucial for develo** future two-dimensional spintronic devices. Recent studies show that efficient spin-to-charge conversions via either the inverse spin Hall effect or the inverse Rashba-Edelstein effect can be achieved in graphene by proximity with an adjacent spin-orbit coupling material. Lateral spin valve devices, made up of a graphene Hall bar and…
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Understanding spin physics in graphene is crucial for develo** future two-dimensional spintronic devices. Recent studies show that efficient spin-to-charge conversions via either the inverse spin Hall effect or the inverse Rashba-Edelstein effect can be achieved in graphene by proximity with an adjacent spin-orbit coupling material. Lateral spin valve devices, made up of a graphene Hall bar and ferromagnets, are best suited for such studies. Here, we report that signals mimicking the inverse Rashba-Edelstein effect can be measured in pristine graphene possessing negligible spin-orbit coupling, confirming that these signals are unrelated to spin-to-charge conversion. We identify either the anomalous Hall effect in the ferromagnet or the ordinary Hall effect in graphene induced by stray fields as the possible sources of this artefact. By quantitatively comparing these options with finite-element-method simulations, we conclude the latter better explains our results. Our study deepens the understanding of spin-to-charge conversion measurement schemes in graphene, which should be taken into account when designing future experiments.
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Submitted 3 November, 2021; v1 submitted 9 September, 2021;
originally announced September 2021.
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Large spin-charge interconversion induced by interfacial spin-orbit coupling in a highly conducting all-metallic system
Authors:
Van Tuong Pham,
Haozhe Yang,
Won Young Choi,
Alain Marty,
Inge Groen,
Andrey Chuvilin,
F. Sebastian Bergeret,
Luis E. Hueso,
Ilya V. Tokatly,
Fèlix Casanova
Abstract:
Spin-charge interconversion in systems with spin-orbit coupling has provided a new route for the generation and detection of spin currents in functional devices for memory and logic such as spin-orbit torque switching in magnetic memories or magnetic state reading in spin-based logic. Disentangling the bulk (spin Hall effect) from the interfacial (inverse spin galvanic effect) contribution has bee…
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Spin-charge interconversion in systems with spin-orbit coupling has provided a new route for the generation and detection of spin currents in functional devices for memory and logic such as spin-orbit torque switching in magnetic memories or magnetic state reading in spin-based logic. Disentangling the bulk (spin Hall effect) from the interfacial (inverse spin galvanic effect) contribution has been a common issue to properly quantify the spin-charge interconversion in these systems, being the case of Au paradigmatic. Here, we obtain a large spin-charge interconversion at a highly conducting Au/Cu interface which is experimentally shown to arise from the inverse spin galvanic effect of the interface and not from the spin Hall effect of bulk Au. We use two parameters independent of the microscopic details to properly quantify the spin-charge interconversion and the spin losses due to the interfacial spin-orbit coupling, providing an adequate benchmarking to compare with any spin-charge interconversion system. The good performance of this metallic interface, not based in Bi, opens the path to the use of much simpler light/heavy metal systems.
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Submitted 27 June, 2024; v1 submitted 23 August, 2021;
originally announced August 2021.
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Spin-orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures
Authors:
Van Tuong Pham,
Inge Groen,
Sasikanth Manipatruni,
Won Young Choi,
Dmitri E. Nikonov,
Edurne Sagasta,
Chia-Ching Lin,
Tanay Gosavi,
Alain Marty,
Luis E. Hueso,
Ian Young,
Fèlix Casanova
Abstract:
Efficient detection of the magnetic state at nanoscale dimensions is an important step to utilize spin logic devices for computing. Magnetoresistance effects have been hitherto used in magnetic state detection, but they suffer from energetically unfavorable scaling and do not generate an electromotive force that can be used to drive a circuit element for logic device applications. Here, we experim…
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Efficient detection of the magnetic state at nanoscale dimensions is an important step to utilize spin logic devices for computing. Magnetoresistance effects have been hitherto used in magnetic state detection, but they suffer from energetically unfavorable scaling and do not generate an electromotive force that can be used to drive a circuit element for logic device applications. Here, we experimentally show that a favorable miniaturization law is possible via the use of spin-Hall detection of the in-plane magnetic state of a magnet. This scaling law allows us to obtain a giant signal by spin Hall effect in CoFe/Pt nanostructures and quantify an effective spin-to-charge conversion rate for the CoFe/Pt system. The spin-to-charge conversion can be described as a current source with an internal resistance, i.e., it generates an electromotive force that can be used to drive computing circuits. We predict that the spin-orbit detection of magnetic states can reach high efficiency at reduced dimensions, paving the way for scalable spin-orbit logic devices and memories.
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Submitted 24 February, 2020;
originally announced February 2020.
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Convolutional Attention Networks for Multimodal Emotion Recognition from Speech and Text Data
Authors:
Chan Woo Lee,
Kyu Ye Song,
Jihoon Jeong,
Woo Yong Choi
Abstract:
Emotion recognition has become a popular topic of interest, especially in the field of human computer interaction. Previous works involve unimodal analysis of emotion, while recent efforts focus on multi-modal emotion recognition from vision and speech. In this paper, we propose a new method of learning about the hidden representations between just speech and text data using convolutional attentio…
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Emotion recognition has become a popular topic of interest, especially in the field of human computer interaction. Previous works involve unimodal analysis of emotion, while recent efforts focus on multi-modal emotion recognition from vision and speech. In this paper, we propose a new method of learning about the hidden representations between just speech and text data using convolutional attention networks. Compared to the shallow model which employs simple concatenation of feature vectors, the proposed attention model performs much better in classifying emotion from speech and text data contained in the CMU-MOSEI dataset.
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Submitted 8 March, 2019; v1 submitted 17 May, 2018;
originally announced May 2018.
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AI4AI: Quantitative Methods for Classifying Host Species from Avian Influenza DNA Sequence
Authors:
Woo Yong Choi,
Kyu Ye Song,
Chan Woo Lee
Abstract:
Avian Influenza breakouts cause millions of dollars in damage each year globally, especially in Asian countries such as China and South Korea. The impact magnitude of a breakout directly correlates to time required to fully understand the influenza virus, particularly the interspecies pathogenicity. The procedure requires laboratory tests that require resources typically lacking in a breakout emer…
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Avian Influenza breakouts cause millions of dollars in damage each year globally, especially in Asian countries such as China and South Korea. The impact magnitude of a breakout directly correlates to time required to fully understand the influenza virus, particularly the interspecies pathogenicity. The procedure requires laboratory tests that require resources typically lacking in a breakout emergency. In this study, we propose new quantitative methods utilizing machine learning and deep learning to correctly classify host species given raw DNA sequence data of the influenza virus, and provide probabilities for each classification. The best deep learning models achieve top-1 classification accuracy of 47%, and top-3 classification accuracy of 82%, on a dataset of 11 host species classes.
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Submitted 26 February, 2018;
originally announced February 2018.
