First Test Results of the Trans-Impedance Amplifier Stage of the Ultra-fast HPSoC ASIC
Authors:
C. Chock,
K. Flood,
L. Macchiarulo,
I. Mostafanezhad,
R. Perron,
D. Uehara,
F. Martinez-Mckinney,
A. Martinez- Rojas,
S. Mazza,
M. Nizam,
J. Ott,
E. Ryan,
H. F. -W. Sadrozinski,
B. Schumm,
A. Seiden,
K. Shin,
M. Tarka,
M. Wilder,
Y. Zhao
Abstract:
We present the first results from the HPSoC ASIC designed for readout of Ultra-fast Silicon Detectors. The 4-channel ASIC manufactured in 65 nm CMOS by TSMC has been optimized for 50 um thick AC-LGAD. The evaluation of the analog front end with \b{eta}-particles im**ing on 3x3 AC-LGAD arrays (500 um pitch, 200x200 um2 metal) confirms a fast output rise time of 600 ps and good timing performance…
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We present the first results from the HPSoC ASIC designed for readout of Ultra-fast Silicon Detectors. The 4-channel ASIC manufactured in 65 nm CMOS by TSMC has been optimized for 50 um thick AC-LGAD. The evaluation of the analog front end with \b{eta}-particles im**ing on 3x3 AC-LGAD arrays (500 um pitch, 200x200 um2 metal) confirms a fast output rise time of 600 ps and good timing performance with a jitter of 45 ps. Further calibration experiments and TCT laser studies indicate some gain limitations that are being investigated and are driving the design of the second-generation pre-amplification stages to reach a jitter of 15 ps.
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Submitted 10 December, 2022; v1 submitted 17 October, 2022;
originally announced October 2022.
