Spin-orbit Torque Switching in an All-Van der Waals Heterostructure
Authors:
Inseob Shin,
Won Joon Cho,
Eun-Su An,
Sungyu Park,
Hyeon-Woo Jeong,
Seong Jang,
Woon Joong Baek,
Seong Yong Park,
Dong-Hwan Yang,
Jun Ho Seo,
Gi-Yeop Kim,
Mazhar N. Ali,
Si-Young Choi,
Hyun-Woo Lee,
Jun Sung Kim,
Sungdug Kim,
Gil-Ho Lee
Abstract:
Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current source with a large SOT efficiency ($ξ$) and electrical conductivity ($σ$), and an efficient spin injection across a transparent interface. Herein, we use singl…
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Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current source with a large SOT efficiency ($ξ$) and electrical conductivity ($σ$), and an efficient spin injection across a transparent interface. Herein, we use single crystals of the van der Waals (vdW) topological semimetal WTe$_2$ and vdW ferromagnet Fe$_3$GeTe$_2$ to satisfy the requirements in their all-vdW-heterostructure with an atomically sharp interface. The results exhibit values of $ξ{\approx}4.6$ and $σ{\approx}2.25{\times}10^5 Ω^{-1} m^{-1}$ for WTe$_2$. Moreover, we obtain the significantly reduced switching current density of $3.90{\times}10^6 A/cm^2$ at 150 K, which is an order of magnitude smaller than those of conventional heavy-metal/ ferromagnet thin films. These findings highlight that engineering vdW-type topological materials and magnets offers a promising route to energy-efficient magnetization control in SOT-based spintronics.
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Submitted 18 February, 2021;
originally announced February 2021.
Glass sha** at nanoscale: Mechanical forming of brittle amorphous silica by engineered inelastic interaction of scanning electrons with matter
Authors:
Sung-gyu Kang,
Kyeongjae Jeong,
Woo ** Cho,
Jeongin Paeng,
Jae-Pyeong Ahn,
Steven Boles,
Heung Nam Han,
In-Suk Choi
Abstract:
Amorphous silica deforms viscoplastically at elevated temperatures, as is common for brittle glasses. The key mechanism of viscoplastic deformation involves interatomic bond switching, which is known to be a thermally activated process. In this study, through systematic in-situ compression tests by scanning electron microscopy, the viscoplastic deformation of amorphous silica is observed without t…
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Amorphous silica deforms viscoplastically at elevated temperatures, as is common for brittle glasses. The key mechanism of viscoplastic deformation involves interatomic bond switching, which is known to be a thermally activated process. In this study, through systematic in-situ compression tests by scanning electron microscopy, the viscoplastic deformation of amorphous silica is observed without thermal activation. Furthermore, ductility does not increase monotonically with acceleration voltage and current density of the SEM e-beam but is maximized by a factor of three at a specific acceleration voltage and current density conditions (compared to beam-off conditions). A Monte Carlo simulation of the electron-matter interaction shows that the unique trends of viscoplastic deformation correlate with the interaction volume, i.e., the region within the material where inelastic electron scattering occurs. Changing the size of the migrating atomic clusters can lead to facility in rearrangements of the intramolecular bonds, hence leading to more sustained bond switching. Based on the interaction volume the mechanical sha** of small-scale amorphous silica structures under e-beam irradiation can be modeled with high-precision supporting the idea that this relatively low-voltage e-beam-irradiation induced viscoplastic-deformation technique holds great potential for advancing amorphous silica structure manufacturing and develo** e-beam assisted manufacturing for covalently bonded non-metallic materials.
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Submitted 18 August, 2020;
originally announced August 2020.
