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CO2-driven surface changes in the Hapi region on Comet 67P/Churyumov-Gerasimenko
Authors:
Björn J. R. Davidsson,
F. Peter Schloerb,
Sonia Fornasier,
Nilda Oklay,
Pedro J. Gutiérrez,
Bonnie J. Buratti,
Artur B. Chmielewski,
Samuel Gulkis,
Mark D. Hofstadter,
H. Uwe Keller,
Holger Sierks,
Carsten Güttler,
Michael Küppers,
Hans Rickman,
Mathieu Choukroun,
Seungwon Lee,
Emmanuel Lellouch,
Anthony Lethuillier,
Vania Da Deppo,
Olivier Groussin,
Ekkehard Kührt,
Nicolas Thomas,
Cecilia Tubiana,
M. Ramy El-Maarry,
Fiorangela La Forgia
, et al. (2 additional authors not shown)
Abstract:
Between 2014 December 31 and 2015 March 17, the OSIRIS cameras on Rosetta documented the growth of a 140m wide and 0.5m deep depression in the Hapi region on Comet 67P/Churyumov-Gerasimenko. This shallow pit is one of several that later formed elsewhere on the comet, all in smooth terrain that primarily is the result of airfall of coma particles. We have compiled observations of this region in Hap…
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Between 2014 December 31 and 2015 March 17, the OSIRIS cameras on Rosetta documented the growth of a 140m wide and 0.5m deep depression in the Hapi region on Comet 67P/Churyumov-Gerasimenko. This shallow pit is one of several that later formed elsewhere on the comet, all in smooth terrain that primarily is the result of airfall of coma particles. We have compiled observations of this region in Hapi by the microwave instrument MIRO on Rosetta, acquired during October and November 2014. We use thermophysical and radiative transfer models in order to reproduce the MIRO observations. This allows us to place constraints on the thermal inertia, diffusivity, chemical composition, stratification, extinction coefficients, and scattering properties of the surface material, and how they evolved during the months prior to pit formation. The results are placed in context through long-term comet nucleus evolution modelling. We propose that: 1) MIRO observes signatures that are consistent with a solid-state greenhouse effect in airfall material; 2) CO2 ice is sufficiently close to the surface to have a measurable effect on MIRO antenna temperatures, and likely is responsible for the pit formation in Hapi observed by OSIRIS; 3) the pressure at the CO2 sublimation front is sufficiently strong to expel dust and water ice outwards, and to compress comet material inwards, thereby causing the near-surface compaction observed by CONSERT, SESAME, and groundbased radar, manifested as the "consolidated terrain" texture observed by OSIRIS.
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Submitted 14 October, 2022;
originally announced October 2022.
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Mid-Air Helicopter Delivery at Mars Using a Jetpack
Authors:
Jeff Delaune,
Jacob Izraelevitz,
Samuel Sirlin,
David Sternberg,
Louis Giersch,
L. Phillipe Tosi,
Evgeniy Skliyanskiy,
Larry Young,
Michael Mischna,
Shannah Withrow-Maser,
Juergen Mueller,
Joshua Bowman,
Mark S Wallace,
Havard F. Grip,
Larry Matthies,
Wayne Johnson,
Matthew Keennon,
Benjamin Pipenberg,
Harsh Patel,
Christopher Lim,
Aaron Schutte,
Marcel Veismann,
Haley Cummings,
Sarah Conley,
Jonathan Bapst
, et al. (10 additional authors not shown)
Abstract:
Mid-Air Helicopter Delivery (MAHD) is a new Entry, Descent and Landing (EDL) architecture to enable in situ mobility for Mars science at lower cost than previous missions. It uses a jetpack to slow down a Mars Science Helicopter (MSH) after separation from the backshell, and reach aerodynamic conditions suitable for helicopter take-off in mid air. For given aeroshell dimensions, only MAHD's lander…
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Mid-Air Helicopter Delivery (MAHD) is a new Entry, Descent and Landing (EDL) architecture to enable in situ mobility for Mars science at lower cost than previous missions. It uses a jetpack to slow down a Mars Science Helicopter (MSH) after separation from the backshell, and reach aerodynamic conditions suitable for helicopter take-off in mid air. For given aeroshell dimensions, only MAHD's lander-free approach leaves enough room in the aeroshell to accommodate the largest rotor option for MSH. This drastically improves flight performance, notably allowing +150\% increased science payload mass. Compared to heritage EDL approaches, the simpler MAHD architecture is also likely to reduce cost, and enables access to more hazardous and higher-elevation terrains on Mars. This paper introduces a design for the MAHD system architecture and operations. We present a mechanical configuration that fits both MSH and the jetpack within the 2.65-m Mars heritage aeroshell, and a jetpack control architecture which fully leverages the available helicopter avionics. We discuss preliminary numerical models of the flow dynamics resulting from the interaction between the jets, the rotors and the side winds. We define a force-torque sensing architecture capable of handling the wind and trimming the rotors to prepare for safe take-off. Finally, we analyze the dynamic environment and closed-loop control simulation results to demonstrate the preliminary feasibility of MAHD.
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Submitted 7 March, 2022;
originally announced March 2022.
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Alloyed B-(AlxGa1-x)2O3 bulk Czochralski single B-(Al0.1Ga0.9)2O3 and polycrystals B-(Al0.33Ga0.66)2O3, B-(Al0.5Ga0.5)2O3), and property trends
Authors:
Jani Jesenovec,
Benjamin L. Dutton,
Nicholas Stone-Weiss,
Adrian Chmielewski,
Muad Saleh,
Carl Peterson,
Nasim Alem,
Sriram Krishnamoorthy,
John S. McCloy
Abstract:
In this work, bulk Czochralski-grown single crystals of 10 mol. % Al2O3 alloyed B-Ga2O3 - monoclinic 10% AGO or B-(Al0.1Ga0.9)2O3 - are obtained, which show +0.20 eV increase in the bandgap compared with unintentionally doped B-Ga2O3. Further, growths of 33% AGO - B-(Al0.33Ga0.67)2O3 - and 50% AGO - B-(Al0.5Ga0.5)2O3 or B-AlGaO3 - produce polycrystalline single-phase monoclinic material (B-AGO). A…
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In this work, bulk Czochralski-grown single crystals of 10 mol. % Al2O3 alloyed B-Ga2O3 - monoclinic 10% AGO or B-(Al0.1Ga0.9)2O3 - are obtained, which show +0.20 eV increase in the bandgap compared with unintentionally doped B-Ga2O3. Further, growths of 33% AGO - B-(Al0.33Ga0.67)2O3 - and 50% AGO - B-(Al0.5Ga0.5)2O3 or B-AlGaO3 - produce polycrystalline single-phase monoclinic material (B-AGO). All three compositions are investigated by x-ray diffraction, Raman spectroscopy, optical absorption, and 27Al nuclear magnetic resonance (NMR). By investigating single phase B-AGO over a large range of Al2O3 concentrations (10 - 50 mol. %), broad trends in the lattice parameter, vibrational modes, optical bandgap, and crystallographic site preference are determined. All lattice parameters show a linear trend with Al incorporation. According to NMR, aluminum incorporates on both crystallographic sites of B-Ga2O3, with a slight preference for the octahedral (GaII) site, which becomes more disordered with increasing Al. Single crystals of 10% AGO were also characterized by x-ray rocking curve, transmission electron microscopy, purity (glow discharge mass spectroscopy and x-ray fluorescence), optical transmission (200 nm - 20 um wavelengths), and resistivity. These measurements suggest that electrical compensation by impurity acceptor do** is not the likely explanation for high resistivity, but rather the shift of a hydrogen level from a shallow donor to a deep acceptor due to Al alloying. .. Cont.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 131 155702.
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Submitted 25 April, 2022; v1 submitted 10 January, 2022;
originally announced January 2022.
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In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition
Authors:
Saurav Roy,
Adrian E. Chmielewski,
Arkka Bhattacharyya,
Praneeth Ranga,
Rujun Sun,
Michael A. Scarpulla,
Nasim Alem,
Sriram Krishnamoorthy
Abstract:
High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$_2$O$_3$ on $β$-Ga$_2$O$_3$ as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al$_2$O$_3$ is performed in the same reactor as Ga$_2$O$_3$ using trimethylaluminum a…
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High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$_2$O$_3$ on $β$-Ga$_2$O$_3$ as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al$_2$O$_3$ is performed in the same reactor as Ga$_2$O$_3$ using trimethylaluminum and O$_2$ as precursors without breaking the vacuum at a growth temperature of 600 $^0$C. The fast and slow near interface traps at the Al$_2$O$_3$/ $β$-Ga$_2$O$_3$ interface are identified and quantified using stressed capacitance-voltage (CV) measurements on metal oxide semiconductor capacitor (MOSCAP) structures. The density of shallow and deep level initially filled traps (D$_{it}$) are measured using ultra-violet (UV) assisted CV technique. The average D$_{it}$ for the MOSCAP is determined to be 7.8 $\times$ 10$^{11}$ cm$^{-2}$eV$^{-1}$. The conduction band offset of the Al$_2$O$_3$/ Ga$_2$O$_3$ interface is also determined from CV measurements and found out to be 1.7 eV which is in close agreement with the existing literature reports of ALD Al$_2$O$_3$/ Ga$_2$O$_3$ interface. The current-voltage characteristics are also analyzed and the average breakdown field is extracted to be approximately 5.8 MV/cm. This in-situ Al$_2$O$_3$ dielectric on $β$-Ga$_2$O$_3$ with improved dielectric properties can enable Ga$_2$O$_3$-based high performance devices.
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Submitted 28 March, 2021;
originally announced March 2021.
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Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels
Authors:
Praneeth Ranga,
Arkka Bhattacharyya,
Adrian Chmielewski,
Saurav Roy,
Rujun Sun,
Michael A. Scarpulla,
Nasim Alem,
Sriram Krishnamoorthy
Abstract:
We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped \b{eta}-(AlxGa1-x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. Hall sheet cha…
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We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped \b{eta}-(AlxGa1-x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. Hall sheet charge density of 1.06 x 1013 cm-2 and mobility of 111 cm2/Vs is measured at room temperature. Fabricated transistor showed peak current of 22 mA/mm and on-off ratio of 8 x 106. Sheet resistance of 5.3 kΩ/Square is measured at room temperature, which includes contribution from a parallel channel in \b{eta}-(AlxGa1-x)2O3.
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Submitted 30 November, 2020; v1 submitted 23 September, 2020;
originally announced September 2020.
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Delta-doped \b{eta}-Ga2O3 Films With Low FWHM Charge Profile Grown By Metalorganic Vapor-Phase Epitaxy
Authors:
Praneeth Ranga,
Arkka Bhattacharyya,
Adrian Chmielewski,
Saurav Roy,
Nasim Alem,
Sriram Krishnamoorthy
Abstract:
We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capacitance-Voltage and Hall techniques. SIMS measurements show that surface segregation is the chief cause of large FWHM in MOVPE-grown films. The surface segregation coefficient (R) is observed to reduce with reduction in…
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We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capacitance-Voltage and Hall techniques. SIMS measurements show that surface segregation is the chief cause of large FWHM in MOVPE-grown films. The surface segregation coefficient (R) is observed to reduce with reduction in the growth temperature. Films grown at 600 °C show an electron concentration of 9.7 x 1012 cm-2 and a FWHM of 3.2 nm. High resolution scanning/transmission electron microscopy of the epitaxial film did not reveal any significant observable degradation in crystal quality of the delta sheet and surrounding regions. Hall measurements of delta-doped film on Fe-doped substrate showed a sheet charge density of 6.1 x 1012 cm-2 and carrier mobility of 83 cm2/V. s. Realization of sharp delta do** profiles in MOVPE-grown \b{eta}-Ga2O3 is promising for high performance device applications.
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Submitted 29 August, 2020;
originally announced August 2020.
