Showing 1–22 of 22 results for author: Chittari, B L

Experimental and Computational Insights Into the Magnetic Anisotropy and Magnetic Behaviour of Layered Room-Temperature Ferromagnet Cr$_{1.38}$Te$_2$

Authors: Shubham Purwar, Tushar Kanti Bhowmik, Tijare Mandar Rajesh, Anupam Gorai, Bheema Lingam Chittari, S. Thirupathaiah

Abstract: We investigate the structural, magnetocrystalline anisotropy, critical behaviour, and magnetocaloric effect in the layered room-temperature monoclinic ferromagnet Cr$_{1.38}$Te$_2$. The critical behavior is studied by employing various techniques such as the modified Arrott plot (MAP), the Kouvel-Fisher method (KF), and the critical isothermal analysis (CI) around the Curie temperature ($T_C$) of… ▽ More We investigate the structural, magnetocrystalline anisotropy, critical behaviour, and magnetocaloric effect in the layered room-temperature monoclinic ferromagnet Cr$_{1.38}$Te$_2$. The critical behavior is studied by employing various techniques such as the modified Arrott plot (MAP), the Kouvel-Fisher method (KF), and the critical isothermal analysis (CI) around the Curie temperature ($T_C$) of 316 K. The derived critical exponents are self-consistent and obey the rescaling analysis. The Monte-Carlo simulations reproduce the experimentally obtained critical exponents. However, the derived critical exponents do not suggest any single universality class of the magnetic interactions. On the other hand, the renormalization group (RG) theory suggests 3D-Ising type long-range exchange interactions [$J(r)$], decaying with distance ($r$) as $J (r) = r^{-(d+σ)}= r^{-4.73}$. Further, magnetocrystalline anisotropy energy density (K$_u$) is found to be temperature dependent. The ground state magnetic easy-axis ($b$-axis) is identified by analyzing the magnetocrystalline anisotropy energy (MAE) using the density functional theory calculations. Maximum entropy change -$ΔS_{m}^{max}$$\approx$2.51 J/kg-K is found near the $T_C$. △ Less

Submitted 24 June, 2024; originally announced June 2024.

Comments: 20 pages, 8 figures, accepted for publication in Physica Scripta

Endless Dirac nodal lines and high mobility in kagome semimetal Ni3In2Se2 single crystal

Authors: Sanand Kumar Pradhan, Sharadnarayan Pradhan, Priyanath Mal, P. Rambabu, Archana Lakhani, Bipul Das, Bheema Lingam Chittari, G. R. Turpu, Pradip Das

Abstract: Kagome-lattice crystal is crucial in quantum materials research, exhibiting unique transport properties due to its rich band structure and the presence of nodal lines and rings. Here, we investigate the electronic transport properties and perform first-principles calculations for Ni$_{3}$In$_{2}$Se$_{2}$ kagome topological semimetal. First-principle calculations indicate six endless Dirac nodal li… ▽ More Kagome-lattice crystal is crucial in quantum materials research, exhibiting unique transport properties due to its rich band structure and the presence of nodal lines and rings. Here, we investigate the electronic transport properties and perform first-principles calculations for Ni$_{3}$In$_{2}$Se$_{2}$ kagome topological semimetal. First-principle calculations indicate six endless Dirac nodal lines and two nodal rings with a $π$-Berry phase in the Ni$_{3}$In$_{2}$Se$_{2}$ compound. The temperature-dependent resistivity is dominated by two scattering mechanisms: $s$-$d$ interband scattering occurs below 50 K, while electron-phonon ($e$-$p$) scattering is observed above 50 K. The magnetoresistance (MR) curve aligns with the theory of extended Kohler's rule, suggesting multiple scattering origins and temperature-dependent carrier densities. A maximum MR of 120\% at 2 K and 9 T, with a maximum estimated mobility of approximately 3000 cm$^{2}$V$^{-1}$s$^{-1}$ are observed. The Ni atom's hole-like d$_{x^{2}-y^{2} }$ and electron-like d$_{z^{2}}$ orbitals exhibit peaks and valleys, forming a local indirect-type band gap near the Fermi level (E$_{F}$). This configuration enhances the motion of electrons and holes, resulting in high mobility and relatively high magnetoresistance. △ Less

Submitted 6 January, 2024; originally announced January 2024.

Orbital Hall Conductivity in Bilayer Graphene

Authors: Sovan Ghosh, Bheema Lingam Chittari

Abstract: We investigate the orbital Hall conductivity in bilayer graphene (G/G), by modifying one of the layer as Haldane type with the next nearest neighbour (NNN) hop** strength and flux. The Haldane flux in one of the layer breaks the time reversal symmetry in both the layers and induces the gap opening at the Dirac points $K$ and $K'$ points. It is observed that the low energy isolated bands show lar… ▽ More We investigate the orbital Hall conductivity in bilayer graphene (G/G), by modifying one of the layer as Haldane type with the next nearest neighbour (NNN) hop** strength and flux. The Haldane flux in one of the layer breaks the time reversal symmetry in both the layers and induces the gap opening at the Dirac points $K$ and $K'$ points. It is observed that the low energy isolated bands show large orbital magnetization and induce the Hall potential for opposite magnetic polarization under the external fields, thereby contribute to the orbital Hall conductivity (OHC). The self-rotation of the isolated electrons in their respective orbits leads to strong orbital angular momentum, which is more fundamental in non-magnetic materials. The observed OHC is similar to the anomalous Hall conductivity (AHC). Moreover, the orbital magnetization with opposite sign among the occupied states adds up to the higher OHC in the gap, whereas the AHC get vanishes. We further show the results of bilayer graphene with both the layers as Haldane type ($\rm \tilde G/ \tilde G$), and found that the OHC behaves similar to AHC which indicate that, the OHC is strongly depends on the band dispersion. Similarly, we show that in the heterobilayers with one of the layer is Haldane type generates the orbital magnetization and induces the OHC. It is concluded that, the isolated bands in Graphene bilayers with external stimuli are of orbital nature and show orbital ferromagnetism in the valleys in BZ. △ Less

Submitted 10 November, 2023; originally announced November 2023.

Magnetotransport properties of a twisted bilayer graphene in the presence of external electric and magnetic field

Authors: Priyanka Sinha, Ayan Mondal, Simão Meneses João, Bheema Lingam Chittari

Abstract: We extensively investigate the electronic and transport properties of a twisted bilayer graphene when subjected to both an external perpendicular electric field and a magnetic field. Using a basic tight-binding model, we show the flat electronic band properties as well as the density of states (DOS), both without and with the applied electric field. In the presence of an electric field, the degene… ▽ More We extensively investigate the electronic and transport properties of a twisted bilayer graphene when subjected to both an external perpendicular electric field and a magnetic field. Using a basic tight-binding model, we show the flat electronic band properties as well as the density of states (DOS), both without and with the applied electric field. In the presence of an electric field, the degeneracy at the Dirac points is lifted where the non-monotonic behavior of the energy gap exists, especially for twist angles below 3$^\circ$. We also study the behavior of the Landau levels (LL) spectra for different twist angles within a very low energy range. These LL spectra get modified under the influence of the external electric field. Moreover, we calculate the dc Hall conductivity ($σ_{xy}$) for a very large system using the Kernel Polynomial Method (KPM). Interestingly, $σ_{xy}$ makes a transition from a half-integer to an integer quantum Hall effect, \textit{i.e.} the value of $σ_{xy}$ shifts from $\pm 4(n+1/2) (2e^2/h)$ ($n$ is an integer) to $\pm 2n (2e^2/h)$ around a small twist angle of $θ=2.005^\circ$. At this angle, $σ_{xy}$ acquires a Hall plateau at zero Fermi energy. However, the behavior of $σ_{xy}$ remains unaltered when the system is exposed to the electric field, particularly at the magic angle where the bands in both layers can hybridize and strong interlayer coupling plays a crucial role. △ Less

Submitted 10 November, 2023; originally announced November 2023.

Comments: 13 pages, 10 figures

Topological properties of nearly flat bands in bilayer $α-\mathcal{T}3$ lattice

Authors: Puspita Parui, Sovan Ghosh, Bheema Lingam Chittari

Abstract: We study the effect of Haldane flux in the bilayer $α$-$\mathcal{T}_3$ lattice system, considering possible non-equivalent, commensurate stacking configurations with a tight-binding formalism. The bilayer $α$-$\mathcal{T}_3$ lattice comprises six sublattices in a unit cell, and its spectrum consists of six bands. In the absence of Haldane flux, threefold band crossings occur at the two Dirac point… ▽ More We study the effect of Haldane flux in the bilayer $α$-$\mathcal{T}_3$ lattice system, considering possible non-equivalent, commensurate stacking configurations with a tight-binding formalism. The bilayer $α$-$\mathcal{T}_3$ lattice comprises six sublattices in a unit cell, and its spectrum consists of six bands. In the absence of Haldane flux, threefold band crossings occur at the two Dirac points for both valence and conduction bands. The introduction of Haldane flux in a cyclically stacked bilayer $α$-$\mathcal{T}_3$ lattice system separates all six bands, including two low-energy, corrugated nearly flat bands, and assigns non-zero Chern numbers to each band, rendering the system topological. We demonstrate that the topological evolution can be induced by modifying the hop** strength between sublattices with the scaling parameter $α$ in each layer. In the dice lattice limit ($α= 1$) of the Chern-insulating phase, the Chern numbers of the three pairs of bands, from low energy to higher energies, are $\pm 2$, $\pm 3$, and $\pm 1$. Interestingly, a continuous change in the parameter $α$ triggers a topological phase transition through band crossings between the two lower energy bands. These crossings occur at different values for the conduction and valence bands and depend further on the next nearest neighbor (NNN) hop** strength. At the transition point, the Chern numbers of the two lower conduction and valence bands change discontinuously from $\pm 2$ to $\pm 5$ and $\pm 3$ to $0$, respectively, while leaving the Chern number of the third band intact. △ Less

Submitted 10 November, 2023; v1 submitted 13 October, 2023; originally announced October 2023.

Topological flat bands in rhombohedral tetralayer and multilayer graphene on hexagonal boron nitride moire superlattices

Authors: Youngju Park, Yeonju Kim, Bheema Lingam Chittari, Jeil Jung

Abstract: We show that rhombohedral four-layer graphene (4LG) nearly aligned with a hexagonal boron nitride (hBN) substrate often develops nearly flat isolated low energy bands with non-zero valley Chern numbers. The bandwidths of the isolated flatbands are controllable through an electric field and twist angle, becoming as narrow as $\sim10~$meV for interlayer potential differences between top and bottom l… ▽ More We show that rhombohedral four-layer graphene (4LG) nearly aligned with a hexagonal boron nitride (hBN) substrate often develops nearly flat isolated low energy bands with non-zero valley Chern numbers. The bandwidths of the isolated flatbands are controllable through an electric field and twist angle, becoming as narrow as $\sim10~$meV for interlayer potential differences between top and bottom layers of $|Δ|\approx 10\sim15~$meV and $θ\sim 0.5^{\circ}$ at the graphene and boron nitride interface. The local density of states (LDOS) analysis shows that the nearly flat band states are associated to the non-dimer low energy sublattice sites at the top or bottom graphene layers and their degree of localization in the moire superlattice is strongly gate tunable, exhibiting at times large delocalization despite of the narrow bandwidth. We verified that the first valence bands' valley Chern numbers are $C^{ν=\pm1}_{V1} = \pm n$, proportional to layer number for $n$LG/BN systems up to $n = 8$ rhombohedral multilayers. △ Less

Submitted 25 April, 2023; originally announced April 2023.

Journal ref: Phys. Rev. B 108, 155406 (2023)

Nearly flat bands in twisted triple bilayer graphene

Authors: Jiseon Shin, Bheema Lingam Chittari, Yunsu Jang, Hongki Min, Jeil Jung

Abstract: We investigate the electronic structure of alternating-twist triple Bernal-stacked bilayer graphene (t3BG) as a function of interlayer coupling $ω$, twist angle $θ$, interlayer potential difference $Δ$, and top-bottom bilayers sliding vector $\boldsymbolτ$ for three possible configurations AB/AB/AB, AB/BA/AB, and AB/AB/BA. The parabolic low-energy band dispersions in a Bernal-stacked bilayer and g… ▽ More We investigate the electronic structure of alternating-twist triple Bernal-stacked bilayer graphene (t3BG) as a function of interlayer coupling $ω$, twist angle $θ$, interlayer potential difference $Δ$, and top-bottom bilayers sliding vector $\boldsymbolτ$ for three possible configurations AB/AB/AB, AB/BA/AB, and AB/AB/BA. The parabolic low-energy band dispersions in a Bernal-stacked bilayer and gap-opening through a finite interlayer potential difference $Δ$ allows the flattening of bands in t3BG down to $\sim 20$~meV for twist angles $θ\lesssim 2^{\circ}$ regardless of the stacking types. The easier isolation of the flat bands and associated reduction of Coulomb screening thanks to the intrinsic gaps of bilayer graphene for finite $Δ$ facilitate the formation of correlation-driven gaps when it is compared to the metallic phases of twisted trilayer graphene under electric fields. We obtain the stacking dependent Coulomb energy versus bandwidth $U/W \gtrsim 1$ ratios in the $θ$ and $Δ$ parameter space. We also present the expected $K$-valley Chern numbers for the lowest-energy nearly flat bands. △ Less

Submitted 19 June, 2022; v1 submitted 3 April, 2022; originally announced April 2022.

Comments: 15 pages, 10 figures

Journal ref: Phys. Rev. B 105, 245124 (2022)

Modulating Curie Temperature and Magnetic Anisotropy in Nanoscale Layered Cr_{2}Te_{3} Films: Implications for Room-Temperature Spintronics

Authors: In Hak Lee, Byoung Ki Choi, Hyuk ** Kim, Min Jay Kim, Hu Young Jeong, Jong Hoon Lee, Seung-Young Park, Younghun Jo, Chanki Lee, Jun Woo Choi, Seong Won Cho, Suyuon Lee, Younghak Kim, Beom Hyun Kim, Kyeong Jun Lee, ** Eun Heo, Seo Hyoung Chang, Feng** Li, Bheema Lingam Chittari, Jeil Jung, Young Jun Chang

Abstract: Nanoscale layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However, strategy for growing films with designed magnetic properties is not well established yet. Herein, we present a versatile method to control the Curie temperature (T_{C}… ▽ More Nanoscale layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However, strategy for growing films with designed magnetic properties is not well established yet. Herein, we present a versatile method to control the Curie temperature (T_{C}) and magnetic anisotropy during growth of ultrathin Cr_{2}Te_{3} films. We demonstrate increase of the TC from 165 K to 310 K in sync with magnetic anisotropy switching from an out-of-plane orientation to an in-plane one, respectively, via controlling the Te source flux during film growth, leading to different c-lattice parameters while preserving the stoichiometries and thicknesses of the films. We attributed this modulation of magnetic anisotropy to the switching of the orbital magnetic moment, using X-ray magnetic circular dichroism analysis. We also inferred that different c-lattice constants might be responsible for the magnetic anisotropy change, supported by theoretical calculations. These findings emphasize the potential of ultrathin Cr_{2}Te_{3} films as candidates for develo** room-temperature spintronics applications and similar growth strategies could be applicable to fabricate other nanoscale layered magnetic compounds. △ Less

Submitted 5 April, 2021; originally announced April 2021.

Comments: 30 pages, 6 figures, accepted in ACS Applied Nano Materials

Stacking and gate tunable topological flat bands, gaps and anisotropic strip patterns in twisted trilayer graphene

Authors: Jiseon Shin, Bheema Lingam Chittari, Jeil Jung

Abstract: Trilayer graphene with a twisted middle layer has recently emerged as a new platform exhibiting correlated phases and superconductivity near its magic angle. A detailed characterization of its electronic structure in the parameter space of twist angle $θ$, interlayer potential difference $Δ$, and top-bottom layer stacking $τ$ reveals that flat bands with large Coulomb energy vs bandwidth… ▽ More Trilayer graphene with a twisted middle layer has recently emerged as a new platform exhibiting correlated phases and superconductivity near its magic angle. A detailed characterization of its electronic structure in the parameter space of twist angle $θ$, interlayer potential difference $Δ$, and top-bottom layer stacking $τ$ reveals that flat bands with large Coulomb energy vs bandwidth $U/W > 1$ are expected within a range of $\pm 0.2^{\circ}$ near $θ\simeq1.5^{\circ}$ and $θ\simeq1.2^{\circ}$ for $τ_{\rm AA}$ top-bottom layer stacking, between a wider $1^{\circ} \sim 1.7^{\circ}$ range for $τ_{\rm AB}$ stacking, whose bands often have finite valley Chern numbers thanks to the opening of primary and secondary band gaps in the presence of a finite $Δ$, and below $θ\lesssim 0.6^{\circ}$ for all $τ$ considered. The largest $U/W$ ratios are expected at the magic angle $\sim 1.5^{\circ}$ when $|Δ| \sim 0$~meV for AA, and slightly below near $\sim 1.4^{\circ}$ for finite $|Δ| \sim 25$~meV for AB stackings, and near $θ\sim 0.4^{\circ}$ for both stackings. When $τ$ is the saddle point stacking vector between AB and BA we observe pronounced anisotropic local density of states (LDOS) strip patterns with broken triangular rotational symmetry. We present optical conductivity calculations that reflect the changes in the electronic structure introduced by the stacking and gate tunable system parameters. △ Less

Submitted 4 April, 2021; originally announced April 2021.

Comments: 13 pages 8 figures

Journal ref: Phys. Rev. B 104, 045413 (2021)

Topological phases in N-layer ABC-graphene boron-nitride moire superlattices

Authors: David Andres Galeano Gonzalez, Bheema Lingam Chittari, Youngju Park, **-Hua Sun, Jeil Jung

Abstract: Rhombohedral $N = 3$ trilayer graphene on hexagonal boron nitride (TLG/BN) hosts gate-tunable, valley-contrasting, nearly flat topological bands that can trigger spontaneous quantum Hall phases under appropriate conditions of the valley and spin polarization. Recent experiments have shown signatures of C = 2 valley Chern bands at 1/4 hole filling, in contrast to the predicted value of C = 3. We di… ▽ More Rhombohedral $N = 3$ trilayer graphene on hexagonal boron nitride (TLG/BN) hosts gate-tunable, valley-contrasting, nearly flat topological bands that can trigger spontaneous quantum Hall phases under appropriate conditions of the valley and spin polarization. Recent experiments have shown signatures of C = 2 valley Chern bands at 1/4 hole filling, in contrast to the predicted value of C = 3. We discuss the low-energy model for rhombohedral N-layer graphene (N = 1, 2, 3) aligned with hexagonal boron nitride (hBN) subject to off-diagonal moire vector potential terms that can alter the valley Chern numbers. Our analysis suggests that topological phase transitions of the flat bands can be triggered by pseudomagnetic vector field potentials associated to moire strain patterns, and that a nematic order with broken rotational symmetry can lead to valley Chern numbers that are in agreement with recent Hall conductivity observations. △ Less

Submitted 10 February, 2021; originally announced February 2021.

Comments: 9 pages, 6 figures

Journal ref: Phys. Rev. B 103, 165112 (2021)

Electron-hole asymmetry and band gaps of commensurate double moire patterns in twisted bilayer graphene on hexagonal boron nitride

Authors: Jiseon Shin, Youngju Park, Bheema Lingam Chittari, Jeil Jung

Abstract: Spontaneous orbital magnetism observed in twisted bilayer graphene (tBG) on nearly aligned hexagonal boron nitride (BN) substrate builds on top of the electronic structure resulting from combined G/G and G/BN double moire interfaces. Here we show that tBG/BN commensurate double moire patterns can be classified into two types, each favoring the narrowing of either the conduction or valence bands on… ▽ More Spontaneous orbital magnetism observed in twisted bilayer graphene (tBG) on nearly aligned hexagonal boron nitride (BN) substrate builds on top of the electronic structure resulting from combined G/G and G/BN double moire interfaces. Here we show that tBG/BN commensurate double moire patterns can be classified into two types, each favoring the narrowing of either the conduction or valence bands on average, and obtain the evolution of the bands as a function of the interlayer sliding vectors and electric fields. Finite valley Chern numbers $\pm 1$ are found in a wide range of parameter space when the moire bands are isolated through gaps, while the local density of states associated to the flat bands are weakly affected by the BN substrate invariably concentrating around the AA-stacked regions of tBG. We illustrate the impact of the BN substrate for a particularly pronounced electron-hole asymmetric band structure by calculating the optical conductivities of twisted bilayer graphene near the magic angle as a function of carrier density. The band structures corresponding to other $N$-multiple commensurate moire period ratios indicate it is possible to achieve narrow width $W \lesssim 30$ meV isolated folded band bundles for tBG angles $θ\lesssim 1^{\circ}$. △ Less

Submitted 3 December, 2020; v1 submitted 30 November, 2020; originally announced November 2020.

Comments: 17 pages, 9 figures

Journal ref: Phys. Rev. B 103, 075423 (2021)

Gate tunable topological flat bands in twisted monolayer-bilayer graphene

Authors: Youngju Park, Bheema Lingam Chittari, Jeil Jung

Abstract: We investigate the band structure of twisted monolayer-bilayer graphene (tMBG), or twisted graphene on bilayer graphene (tGBG), as a function of twist angles and perpendicular electric fields in search of optimum conditions for achieving isolated nearly flat bands. Narrow bandwidths comparable or smaller than the effective Coulomb energies satisfying $U_{\textrm{eff}} /W \gtrsim 1$ are expected fo… ▽ More We investigate the band structure of twisted monolayer-bilayer graphene (tMBG), or twisted graphene on bilayer graphene (tGBG), as a function of twist angles and perpendicular electric fields in search of optimum conditions for achieving isolated nearly flat bands. Narrow bandwidths comparable or smaller than the effective Coulomb energies satisfying $U_{\textrm{eff}} /W \gtrsim 1$ are expected for twist angles in the range of $0.3^{\circ} \sim 1.5^{\circ}$, more specifically in islands around $θ\sim 0.5^{\circ}, \, 0.85^{\circ}, \,1.3^{\circ}$ for appropriate perpendicular electric field magnitudes and directions. The valley Chern numbers of the electron-hole asymmetric bands depend intrinsically on the details of the hop** terms in the bilayer graphene, and extrinsically on factors like electric fields or average staggered potentials in the graphene layer aligned with the contacting hexagonal boron nitride substrate. This tunability of the band isolation, bandwidth, and valley Chern numbers makes of tMBG a more versatile system than twisted bilayer graphene for finding nearly flat bands prone to strong correlations. △ Less

Submitted 4 May, 2020; originally announced May 2020.

Comments: 15 pages, 11 figures

Journal ref: Phys. Rev. B 102, 035411 (2020)

Bulk valley transport and Berry curvature spreading at the edge of flat bands

Authors: Subhajit Sinha, Pratap Chandra Adak, R. S. Surya Kanthi, Bheema Lingam Chittari, L. D. Varma Sangani, Kenji Watanabe, Takashi Taniguchi, Jeil Jung, Mandar M. Deshmukh

Abstract: 2D materials based superlattices have emerged as a promising platform to modulate band structure and its symmetries. In particular, moiré periodicity in twisted graphene systems produces flat Chern bands. The recent observation of anomalous Hall effect (AHE) and orbital magnetism in twisted bilayer graphene has been associated with spontaneous symmetry breaking of such Chern bands. However, the va… ▽ More 2D materials based superlattices have emerged as a promising platform to modulate band structure and its symmetries. In particular, moiré periodicity in twisted graphene systems produces flat Chern bands. The recent observation of anomalous Hall effect (AHE) and orbital magnetism in twisted bilayer graphene has been associated with spontaneous symmetry breaking of such Chern bands. However, the valley Hall state as a precursor of AHE state, when time-reversal symmetry is still protected, has not been observed. Our work probes this precursor state using the valley Hall effect. We show that broken inversion symmetry in twisted double bilayer graphene (TDBG) facilitates the generation of bulk valley current by reporting the first experimental evidence of nonlocal transport in a nearly flat band system. Despite the spread of Berry curvature hotspots and reduced quasiparticle velocities of the carriers in these flat bands, we observe large nonlocal voltage several micrometers away from the charge current path -- this persists when the Fermi energy lies inside a gap with large Berry curvature. The high sensitivity of the nonlocal voltage to gate tunable carrier density and gap modulating perpendicular electric field makes TDBG an attractive platform for valley-twistronics based on flat bands. △ Less

Submitted 30 April, 2020; originally announced April 2020.

Comments: 14 pages, 3 figures and supplementary information

Journal ref: Nature Communications, 11, 5548 (2020)

Magnetoelectric Response of Antiferromagnetic Van der Waals Bilayers

Authors: Chao Lei, Bheema Lingam Chittari, Kentaro Nomura, Nepal Banerjee, Jeil Jung, Allan H. MacDonald

Abstract: We predict that antiferromagnetic bilayers formed from van der Waals (vdW) materials, like bilayer CrI$_3$, have a strong magnetoelectric response that can be detected by measuring the gate voltage dependence of Faraday or Kerr rotation signals, total magnetization, or anomalous Hall conductivity. Strong effects are possible in single-gate geometries, and in dual-gate geometries that allow interna… ▽ More We predict that antiferromagnetic bilayers formed from van der Waals (vdW) materials, like bilayer CrI$_3$, have a strong magnetoelectric response that can be detected by measuring the gate voltage dependence of Faraday or Kerr rotation signals, total magnetization, or anomalous Hall conductivity. Strong effects are possible in single-gate geometries, and in dual-gate geometries that allow internal electric fields and total carrier densities to be varied independently. We comment on the reliability of density-functional-theory estimates of interlayer magnetic interactions in van der Waals bilayers, and on the sensitivity of magnetic interactions to pressure that alters the spatial separation between layers. △ Less

Submitted 12 March, 2021; v1 submitted 18 February, 2019; originally announced February 2019.

Comments: This is the version for publish, the SI can be found in previous version

Journal ref: Nano Letters 21, 1948 (2021)

Flatbands in twisted double bilayer graphene

Authors: Narasimha Raju Chebrolu, Bheema Lingam Chittari, Jeil Jung

Abstract: Flatbands with extremely narrow bandwidths on the order of a few mili-electron volts can appear in twisted multilayer graphene systems for appropriate system parameters. Here we investigate the electronic structure of a twisted bi-bilayer graphene, or twisted double bilayer graphene, to find the parameter space where isolated flatbands can emerge as a function of twist angle, vertical pressure, an… ▽ More Flatbands with extremely narrow bandwidths on the order of a few mili-electron volts can appear in twisted multilayer graphene systems for appropriate system parameters. Here we investigate the electronic structure of a twisted bi-bilayer graphene, or twisted double bilayer graphene, to find the parameter space where isolated flatbands can emerge as a function of twist angle, vertical pressure, and interlayer potential differences. We find that in twisted bi-bilayer graphene the bandwidth is generally flatter than in twisted bilayer graphene by roughly up to a factor of two in the same parameter space of twist angle $θ$ and interlayer coupling $ω$, making it in principle simpler to tailor narrow bandwidth flatbands. Application of vertical pressure can enhance the first magic angle in minimal models at $θ\sim 1.05^{\circ}$ to larger values of up to $θ\sim 1.5^{\circ}$ when $ P \sim 2.5$~GPa, where $θ\propto ω/ \upsilon_{F}$. Narrow bandwidths are expected in bi-bilayers for a continuous range of small twist angles, i.e. without magic angles, when intrinsic bilayer gaps open by electric fields, or due to remote hop** terms. We find that moderate vertical electric fields can contribute in lifting the degeneracy of the low energy flatbands by enhancing the primary gap near the Dirac point and the secondary gap with the higher energy bands. Distinct valley Chern bands are expected near $0^{\circ}$ or $180^{\circ}$ alignments. △ Less

Submitted 20 June, 2019; v1 submitted 24 January, 2019; originally announced January 2019.

Comments: 14 pages, 10 figures in the main tex + supplemental information

Journal ref: Phys. Rev. B 99, 235417 (2019)

Accurate Gap Determination in Monolayer and Bilayer Graphene/h-BN Moire Superlattices

Authors: Hakseong Kim, Nicolas Leconte, Bheema L. Chittari, Kenji Watanabe, Takashi Taniguchi, Allan H. MacDonald, Jeil Jung, Suyong Jung

Abstract: High mobility single and few-layer graphene sheets are in many ways attractive as nanoelectronic circuit hosts but lack energy gaps, which are essential to the operation of field-effect transistors. One of the methods used to create gaps in the spectrum of graphene systems is to form long period moire patterns by aligning the graphene and hexagonal boron nitride (h-BN) substrate lattices. Here, we… ▽ More High mobility single and few-layer graphene sheets are in many ways attractive as nanoelectronic circuit hosts but lack energy gaps, which are essential to the operation of field-effect transistors. One of the methods used to create gaps in the spectrum of graphene systems is to form long period moire patterns by aligning the graphene and hexagonal boron nitride (h-BN) substrate lattices. Here, we use planar tunneling devices with thin h-BN barriers to obtain direct and accurate tunneling spectroscopy measurements of the energy gaps in single- and bi-layer graphene-h-BN superlattice structures at charge neutrality (first Dirac point) and at integer moire band occupancies (second Dirac point, SDP) as a function of external electric and magnetic fields and the interface twist angle. In single-layer graphene we find, in agreement with previous work, that gaps are formed at neutrality and at the hole-doped SDP, but not at the electron-doped SDP. Both primary and secondary gaps can be determined accurately by extrapolating Landau fan patterns to zero magnetic field and are as large as $\simeq$ 17 meV for devices in near perfect alignment. For bilayer graphene, we find that gaps occur only at charge neutrality where they can be modified by an external electric field. Tunneling signatures of in-gap states around neutrality suggest the development of edge modes related to topologically non-trivial valley projected bands due to the combination of an external electric field and moire superlattice patterns. △ Less

Submitted 20 August, 2018; originally announced August 2018.

Comments: 6 figures

Pressure Induced Compression of Flatbands in Twisted Bilayer Graphene

Authors: Bheema Lingam Chittari, Nicolas Leconte, Srivani Javvaji, Jeil Jung

Abstract: We investigate the bandwidth compression due to out of plane pressure of the moire flatbands near charge neutrality in twisted bilayer graphene for a continuous range of small rotation angles of up to $\sim2.5^{\circ}$. The flatband bandwidth minima angles are found to grow linearly with interlayer coupling ω and decrease with Fermi velocity. Application of moderate pressure values of up to 2.5 GP… ▽ More We investigate the bandwidth compression due to out of plane pressure of the moire flatbands near charge neutrality in twisted bilayer graphene for a continuous range of small rotation angles of up to $\sim2.5^{\circ}$. The flatband bandwidth minima angles are found to grow linearly with interlayer coupling ω and decrease with Fermi velocity. Application of moderate pressure values of up to 2.5 GPa achievable through a hydraulic press should allow accessing a flatband for angles as large as $\sim 1.5$^{\circ}$ instead of $\sim 1 \circ$ at zero pressure. This reduction of the moiré pattern length for larger twist angle implies an increase of the effective Coulomb interaction scale per moire cell by about 50% and enhance roughly by a factor of $\sim 2$ the elastic energy that resists the commensuration strains due to the moire pattern. Our results suggest that application of pressure on twisted bilayer graphene nanodevices through a hydraulic press will notably facilitate the device preparation efforts required for exploring the ordered phases near magic angle flatbands. △ Less

Submitted 31 July, 2018; originally announced August 2018.

Comments: 6 pages 3 figures

Report number: http://iopscience.iop.org/article/10.1088/2516-1075/aaead3/meta

Journal ref: Electronic Structure, Volume 1, 015001 (2019)

Gate-Tunable Topological Flat Bands in Trilayer Graphene-Boron Nitride Moiré Superlattices

Authors: Bheema Lingam Chittari, Guorui Chen, Yuanbo Zhang, Feng Wang, Jeil Jung

Abstract: We investigate the electronic structure of the flat bands induced by moiré superlattices and electric fields in nearly aligned ABC trilayer graphene-boron nitride interfaces where Coulomb effects can lead to correlated gapped phases. Our calculations indicate that valley-spin resolved isolated superlattice flat bands that carry a finite Chern number $C = 3$ proportional to layer number can appear… ▽ More We investigate the electronic structure of the flat bands induced by moiré superlattices and electric fields in nearly aligned ABC trilayer graphene-boron nitride interfaces where Coulomb effects can lead to correlated gapped phases. Our calculations indicate that valley-spin resolved isolated superlattice flat bands that carry a finite Chern number $C = 3$ proportional to layer number can appear near charge neutrality for appropriate perpendicular electric fields and twist angles. When the degeneracy of the bands is lifted by Coulomb interactions these topological bands can lead to anomalous quantum Hall phases that embody orbital and spin magnetism. Narrow bandwidths of $\sim10$ meV achievable for a continuous range of twist angles $θ\lesssim 0.6^{\circ}$ with moderate interlayer potential differences of $\sim$50 meV make the TLG/BN systems a promising platform for the study of electric-field tunable Coulomb interaction driven spontaneous Hall phases. △ Less

Submitted 1 June, 2018; originally announced June 2018.

Comments: 8 pages, 6 figures, 1 table

Journal ref: Phys. Rev. Lett. 122, 016401 (2019)

Evidence of Gate-Tunable Mott Insulator in Trilayer Graphene-Boron Nitride Moiré Superlattice

Authors: Guorui Chen, Lili Jiang, Shuang Wu, Bosai Lyu, Hongyuan Li, Bheema Lingam Chittari, Kenji Watanabe, Takashi Taniguchi, Zhiwen Shi, Jeil Jung, Yuanbo Zhang, Feng Wang

Abstract: Mott insulator plays a central role in strongly correlated physics, where the repulsive Coulomb interaction dominates over the electron kinetic energy and leads to insulating states with one electron occupying each unit cell. Doped Mott insulator is often described by the Hubbard model3, which can give rise to other correlated phenomena such as unusual magnetism and even high-temperature supercond… ▽ More Mott insulator plays a central role in strongly correlated physics, where the repulsive Coulomb interaction dominates over the electron kinetic energy and leads to insulating states with one electron occupying each unit cell. Doped Mott insulator is often described by the Hubbard model3, which can give rise to other correlated phenomena such as unusual magnetism and even high-temperature superconductivity. A tunable Mott insulator, where the competition between the Coulomb interaction and the kinetic energy can be varied in situ, can provide an invaluable model system for the study of Mott physics. Here we report the realization of such a tunable Mott insulator in the ABC trilayer graphene (TLG) and hexagonal boron nitride (hBN) heterostructure with a moiré superlattice. Unlike massless Dirac electrons in monolayer graphene, electrons in pristine ABC TLG are characterized by quartic energy dispersion and large effective mass that are conducive for strongly correlated phenomena. The moiré superlattice in TLG/hBN heterostructures leads to narrow electronic minibands that are gate tunable. Each filled miniband contains 4 electrons in one moiré lattice site due to the spin and valley degeneracy of graphene. The Mott insulator states emerge at 1/4 and 1/2 fillings, corresponding to one electron and two electrons per site, respectively. Moreover, the Mott states in the ABC TLG/hBN heterostructure exhibit unprecedented tunability: the Mott gap can be modulated in situ by a vertical electrical field, and at the meantime, the electron do** can be gate-tuned to fill the band from one Mott insulating state to another. Our observation of a tunable Mott insulator opens up exciting opportunities to explore novel strongly correlated phenomena in two-dimensional moiré superlattice heterostructures. △ Less

Submitted 18 January, 2019; v1 submitted 5 March, 2018; originally announced March 2018.

Comments: 11 pages, 4 figures

Journal ref: Nature Physics, 15, 237-241 (2019)

Carrier and strain tunable intrinsic magnetism in two-dimensional MAX$_3$ transition metal chalcogenides

Authors: Bheema Lingam Chittari, Dongkyu Lee, Allan H. MacDonald, Euyheon Hwang, Jeil Jung

Abstract: We present a density functional theory study of the carrier-density and strain dependence of magnetic order in two-dimensional (2D) MAX$_3$ (M= V, Cr, Mn, Fe, Co, Ni; A= Si, Ge, Sn, and X= S, Se, Te) transition metal trichalcogenides. Our {\em ab initio} calculations show that this class of compounds includes wide and narrow gap semiconductors and metals and half-metals, and that most of these com… ▽ More We present a density functional theory study of the carrier-density and strain dependence of magnetic order in two-dimensional (2D) MAX$_3$ (M= V, Cr, Mn, Fe, Co, Ni; A= Si, Ge, Sn, and X= S, Se, Te) transition metal trichalcogenides. Our {\em ab initio} calculations show that this class of compounds includes wide and narrow gap semiconductors and metals and half-metals, and that most of these compounds are magnetic. Although antiferromagnetic order is most common, ferromagnetism is predicted in MSiSe$_3$ for M= Mn, Ni, in MSiTe$_3$ for M= V, Ni, in MnGeSe$_3$, in MGeTe$_3$ for M=Cr, Mn, Ni, in FeSnS$_3$, and in MSnTe$_3$ for M= V, Mn, Fe. Among these compounds CrGeTe$_3$ and VSnTe$_3$ are ferromagnetic semiconductors. Our calculations suggest that the competition between antiferromagnetic and ferromagnetic order can be substantially altered by strain engineering, and in the semiconductor case also by gating. The associated critical temperatures can be substantially enhanced by means of carrier do** and strains. △ Less

Submitted 27 September, 2017; originally announced September 2017.

Comments: 15 pages, 9 figures, 2 tables + supplemental material. In total 36 pages, 25 figures and 7 tables. arXiv admin note: text overlap with arXiv:1604.06445

Journal ref: Phys. Rev. B 101, 085415 (2020)

Dynamic band structure tuning of graphene moiré superlattices with pressure

Authors: Matthew Yankowitz, Jeil Jung, Evan Laksono, Nicolas Leconte, Bheema L. Chittari, K. Watanabe, T. Taniguchi, Shaffique Adam, David Graf, Cory R. Dean

Abstract: Heterostructures of atomically-thin materials have attracted significant interest owing to their ability to host novel electronic properties fundamentally distinct from their constituent layers. In the case of graphene on boron nitride, the closely-matched lattices yield a moiré superlattice that modifies the graphene electron dispersion and opens gaps both at the primary Dirac point (DP) and the… ▽ More Heterostructures of atomically-thin materials have attracted significant interest owing to their ability to host novel electronic properties fundamentally distinct from their constituent layers. In the case of graphene on boron nitride, the closely-matched lattices yield a moiré superlattice that modifies the graphene electron dispersion and opens gaps both at the primary Dirac point (DP) and the moiré-induced secondary Dirac point (SDP) in the valence band. While significant effort has focused on controlling the superlattice period via the rotational stacking order, the role played by the magnitude of the interlayer coupling has received comparatively little attention. Here, we modify the interaction between graphene and boron nitride by tuning their separation with hydrostatic pressure. We observe a dramatic enhancement of the DP gap with increasing pressure, but little change in the SDP gap. Our surprising results identify the critical role played by atomic-scale structural deformations of the graphene lattice and reveal new opportunities for band structure engineering in van der Waals heterostructures. △ Less

Submitted 19 September, 2017; v1 submitted 27 July, 2017; originally announced July 2017.

Comments: 26 Pages, 16 Figures. (v2) Main text and figures are updated

Journal ref: Nature 557, 404-408 (2018)

Electronic and magnetic properties of single-layer MPX$_3$ metal phosphorous trichalcogenides

Authors: Bheema Lingam Chittari, Youngju Park, Dongkyu Lee, Moonsup Han, Allan H. MacDonald, Euyheon Hwang, Jeil Jung

Abstract: We systematically investigate the electronic structure and magnetic properties of two dimensional (2D) MPX$_3$ (M= V, Cr, Mn, Fe, Co, Ni, Cu, Zn, and X = S, Se, Te) transition metal chacogenophosphates to examine their potential role as single-layer van der Waals materials that exhibit magnetic order. Our {\em ab initio} calculations predict that most of these single-layer materials are antiferrom… ▽ More We systematically investigate the electronic structure and magnetic properties of two dimensional (2D) MPX$_3$ (M= V, Cr, Mn, Fe, Co, Ni, Cu, Zn, and X = S, Se, Te) transition metal chacogenophosphates to examine their potential role as single-layer van der Waals materials that exhibit magnetic order. Our {\em ab initio} calculations predict that most of these single-layer materials are antiferromagnetic semiconductors. The band gaps of the antiferromagnetic states decrease as the atomic number of the chalcogen atom increases (from S to Se, Te), leading in some cases to half-metallic ferromagnetic states or to non-magnetic metallic states. We find that the phase transition from antiferromagnetic semiconductor to ferromagnetic half-metal can be controlled by gating or by strain engineering. The sensitive interdependence we find between magnetic, structural, and electronic properties establishes the potential of this 2D materials class for applications in spintronics. △ Less

Submitted 28 September, 2017; v1 submitted 21 April, 2016; originally announced April 2016.

Comments: Published manuscript with supplementary information. 16 pages 8 figures and 4 tables for the main text. 33 pages 20 figures 8 tables in total

Journal ref: Phys. Rev. B 94, 184428 (2016)