Creation of single vacancies in hBN with electron irradiation
Authors:
Thuy An Bui,
Gregor T. Leuthner,
Jacob Madsen,
Mohammad R. A. Monazam,
Alexandru I. Chirita,
Andreas Postl,
Clemens Mangler,
Jani Kotakoski,
Toma Susi
Abstract:
Understanding electron irradiation effects is vital not only for reliable transmission electron microscopy characterization, but increasingly also for the controlled manipulation of two-dimensional materials. The displacement cross sections of monolayer hBN are measured using aberration-corrected scanning transmission electron microscopy in near ultra-high vacuum at primary beam energies between 5…
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Understanding electron irradiation effects is vital not only for reliable transmission electron microscopy characterization, but increasingly also for the controlled manipulation of two-dimensional materials. The displacement cross sections of monolayer hBN are measured using aberration-corrected scanning transmission electron microscopy in near ultra-high vacuum at primary beam energies between 50 and 90 keV. Damage rates below 80 keV are up to three orders of magnitude lower than previously measured at edges under poorer residual vacuum conditions where chemical etching appears to have been dominant. Notably, is possible to create single vacancies in hBN using electron irradiation, with boron almost twice as likely as nitrogen to be ejected below 80 keV. Moreover, any damage at such low energies cannot be explained by elastic knock-on, even when accounting for vibrations of the atoms. A theoretical description is developed to account for lowering of the displacement threshold due to valence ionization resulting from inelastic scattering of probe electrons, modelled using charge-constrained density functional theory molecular dynamics. Although significant reductions are found depending on the constrained charge, quantitative predictions for realistic ionization states are currently not possible. Nonetheless, there is potential for defect-engineering of hBN at the level of single vacancies using electron irradiation.
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Submitted 16 May, 2023; v1 submitted 1 March, 2023;
originally announced March 2023.
Three-dimensional description of vibration-assisted electron knock-on damage
Authors:
Alexandru Chirita,
Alexander Markevich,
Mukesh Tripathi,
Nicholas A. Pike,
Matthieu J. Verstraete,
Jani Kotakoski,
Toma Susi
Abstract:
Elastic knock-on is the main electron irradiation damage mechanism in metals including graphene. Atomic vibrations influence its cross-section, but only the out-of-plane direction has been considered so far in the literature. Here, we present a full three-dimensional theory of knock-on damage including the effect of temperature and vibrations to describe ejection into arbitrary directions. We thus…
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Elastic knock-on is the main electron irradiation damage mechanism in metals including graphene. Atomic vibrations influence its cross-section, but only the out-of-plane direction has been considered so far in the literature. Here, we present a full three-dimensional theory of knock-on damage including the effect of temperature and vibrations to describe ejection into arbitrary directions. We thus establish a general quantitative description of electron irradiation effects through elastic scattering. Applying our methodology to in-plane jumps of pyridinic nitrogen atoms, we show their observed rates imply much stronger inelastic effects than in pristine graphene.
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Submitted 29 November, 2021;
originally announced November 2021.
