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Strong transient magnetic fields induced by THz-driven plasmons in graphene disks
Authors:
Jeong Woo Han,
Pavlo Sai,
Dmytro But,
Ece Uykur,
Stephan Winnerl,
Gagan Kumar,
Matthew L. Chin,
Rachael L. Myers-Ward,
Matthew T. Dejarld,
Kevin M. Daniels,
Thomas E. Murphy,
Wojciech Knap,
Martin Mittendorff
Abstract:
Strong circularly polarized excitation opens up the possibility to generate and control effective magnetic fields in solid state systems, e.g., via the optical inverse Faraday effect or the phonon inverse Faraday effect. While these effects rely on material properties that can be tailored only to a limited degree, plasmonic resonances can be fully controlled by choosing proper dimensions and carri…
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Strong circularly polarized excitation opens up the possibility to generate and control effective magnetic fields in solid state systems, e.g., via the optical inverse Faraday effect or the phonon inverse Faraday effect. While these effects rely on material properties that can be tailored only to a limited degree, plasmonic resonances can be fully controlled by choosing proper dimensions and carrier concentrations. Plasmon resonances provide new degrees of freedom that can be used to tune or enhance the light-induced magnetic field in engineered metamaterials. Here we employ graphene disks to demonstrate light-induced transient magnetic fields from a plasmonic circular current with extremely high efficiency. The effective magnetic field at the plasmon resonance frequency of the graphene disks (3.5 THz) is evidenced by a strong (~1°) ultrafast Faraday rotation (~ 20 ps). In accordance with reference measurements and simulations, we estimated the strength of the induced magnetic field to be on the order of 0.7 T under a moderate pump fluence of about 440 nJ cm-2.
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Submitted 10 July, 2023;
originally announced July 2023.
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Black Phosphorus Radio-Frequency Transistors
Authors:
Han Wang,
Xiaomu Wang,
Fengnian Xia,
Luhao Wang,
Hao Jiang,
Qiangfei Xia,
Matthew L. Chin,
Madan Dubey,
Shu-jen Han
Abstract:
Few-layer and thin film forms of layered black phosphorus (BP) have recently emerged as a promising material for applications in high performance nanoelectronics and infrared optoelectronics. Layered BP thin film offers a moderate bandgap of around 0.3 eV and high carrier mobility, leading to transistors with decent on-off ratio and high on-state current density. Here, we demonstrate the gigahertz…
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Few-layer and thin film forms of layered black phosphorus (BP) have recently emerged as a promising material for applications in high performance nanoelectronics and infrared optoelectronics. Layered BP thin film offers a moderate bandgap of around 0.3 eV and high carrier mobility, leading to transistors with decent on-off ratio and high on-state current density. Here, we demonstrate the gigahertz frequency operation of black phosphorus field-effect transistors for the first time. The BP transistors demonstrated here show excellent current saturation with an on-off ratio exceeding 2000. We achieved a current density in excess of 270 mA/mm and DC transconductance above 180 mS/mm for hole conduction. Using standard high frequency characterization techniques, we measured a short-circuit current-gain cut-off frequency fT of 12 GHz and a maximum oscillation frequency fmax of 20 GHz in 300 nm channel length devices. BP devices may offer advantages over graphene transistors for high frequency electronics in terms of voltage and power gain due to the good current saturation properties arising from their finite bandgap, thus enabling the future ubiquitous transistor technology that can operate in the multi-GHz frequency range and beyond.
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Submitted 14 October, 2014;
originally announced October 2014.
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Blue shifting of the A exciton peak in folded monolayer 1H-MoS2
Authors:
Frank J. Crowne,
Matin Amani,
A. Glen Birdwell,
Matthew L. Chin,
Terrance P. O'Regan,
Sina Najmaei,
Zheng Liu,
Pulickel M. Ajayan,
Jun Lou,
Madan Dubey
Abstract:
The large family of layered transition-metal dichalcogenides is widely believed to constitute a second family of two-dimensional (2D) semiconducting materials that can be used to create novel devices that complement those based on graphene. In many cases these materials have shown a transition from an indirect bandgap in the bulk to a direct bandgap in monolayer systems. In this work we experiment…
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The large family of layered transition-metal dichalcogenides is widely believed to constitute a second family of two-dimensional (2D) semiconducting materials that can be used to create novel devices that complement those based on graphene. In many cases these materials have shown a transition from an indirect bandgap in the bulk to a direct bandgap in monolayer systems. In this work we experimentally show that folding a 1H molybdenum disulphide (MoS2) layer results in a turbostratic stack with enhanced photoluminescence quantum yield and a significant shift to the blue by 90 meV. This is in contrast to the expected 2H-MoS2 band structure characteristics, which include an indirect gap and quenched photoluminescence. We present a theoretical explanation to the origin of this behavior in terms of exciton screening.
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Submitted 5 July, 2013;
originally announced July 2013.
