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Void Engineering in Epitaxially Regrown GaAs-Based Photonic Crystal Surface Emitting Lasers by Grating Profile Design
Authors:
Adam F. McKenzie,
Ben C. King,
Katherine J. Rae,
Stephen Thoms,
Neil D. Gerrard,
Jonathan Orchard,
Kenishi Nishi,
Keizo Takemasa,
Mitsuru Sugawara,
Richard J. E. Taylor,
David T. D. Childs,
Donald A. McLaren,
Richard A. Hogg
Abstract:
We report the engineering of air-voids embedded in GaAs-based photonic crystal surface emitting lasers realised by metalorganic vapour-phase epitaxy regrowth. Two distinct void geometries are obtained by modifying the photonic crystal grating profile within the reactor prior to regrowth. The mechanism of void formation is inferred from scanning transmission electron microscopy analysis, with the e…
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We report the engineering of air-voids embedded in GaAs-based photonic crystal surface emitting lasers realised by metalorganic vapour-phase epitaxy regrowth. Two distinct void geometries are obtained by modifying the photonic crystal grating profile within the reactor prior to regrowth. The mechanism of void formation is inferred from scanning transmission electron microscopy analysis, with the evolution of the growth front illustrated though the use of an AlAs/GaAs superlattice structure. Competition between rapid lateral growth of the (100) surface and slow diffusion across higher index planes is exploited in order to increase void volume, leading to an order of magnitude reduction in threshold current and an increase in output power through an increase in the associated grating coupling strength.
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Submitted 9 November, 2020;
originally announced November 2020.
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Coherent Power Scaling in Photonic Crystal Surface Emitting Laser Arrays
Authors:
Ben C. King,
Katherine J. Rae,
Adam F. McKenzie,
Aleksander Boldin,
Daehyun Kim,
Neil D. Gerrard,
Guangrui Li,
Kenishi Nishi,
Mitsuru Sugawara,
Richard J. E. Taylor,
David T. D. Childs,
Richard A. Hogg
Abstract:
A key benefit of photonic crystal surface emitting lasers (PCSELs) is the abillity to increase output power through scaling the emission area while mainting high quality single mode emission, allowing them to close the brightness gap which exists between semiconductor lasers and gas and fibre lasers. However, there are practical limits to the size, and hence power, of an individual PCSEL device an…
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A key benefit of photonic crystal surface emitting lasers (PCSELs) is the abillity to increase output power through scaling the emission area while mainting high quality single mode emission, allowing them to close the brightness gap which exists between semiconductor lasers and gas and fibre lasers. However, there are practical limits to the size, and hence power, of an individual PCSEL device and there are trade-offs between single-mode stability and parasitic in-plane losses with increasing device size. In this paper we discuss 2D coherent arrays as an approach to area and coherent power scaling of PCSELs. We demonstrate in two and three element PCSEL arrays an increase in the differential efficiency of the system due to a reduction in in-plane loss.
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Submitted 9 November, 2020;
originally announced November 2020.
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1.5 μm Epitaxially Regrown Photonic Crystal Surface Emitting Laser Diode
Authors:
Zijun Bian,
Katherine J. Rae,
Adam F. McKenzie,
Ben C. King,
Nasser Babazadeh,
Guangrui Li,
Jonathan R. Orchard,
Neil D. Gerrard,
Stephen Thoms,
Donald A. McLaren,
Richard J. E. Taylor,
David Childs,
Richard A. Hogg
Abstract:
We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, lasing in quasi- CW conditions at 1523nm.
We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, lasing in quasi- CW conditions at 1523nm.
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Submitted 19 October, 2020;
originally announced October 2020.
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Power and spectral characterization of photonic integrated circuit based axicon like lens
Authors:
Rijan Maharjan,
Sanket Bohora,
Pravin Bhattarai,
Iain Crowe,
Richard J. Curry,
Richard Hogg,
David Childs,
Ashim Dhakal
Abstract:
We demonstrate an on-chip Silicon-on-Insulator (SOI) axicon etched using a low resolution (200 nm feature size, 250 nm gap) deep-ultraviolet lithographic fabrication. The axicon consists of circular gratings with seven stages of 1x2 multimode interferometers. We present a technique to apodize the gratings azimuthally by breaking up the circles into arcs which successfully increased the penetration…
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We demonstrate an on-chip Silicon-on-Insulator (SOI) axicon etched using a low resolution (200 nm feature size, 250 nm gap) deep-ultraviolet lithographic fabrication. The axicon consists of circular gratings with seven stages of 1x2 multimode interferometers. We present a technique to apodize the gratings azimuthally by breaking up the circles into arcs which successfully increased the penetration depth in the gratings from $\approx$5 $μ$m to $\approx$55 $μ$m. We characterize the device's performance by coupling 1300$\pm$50 nm swept source laser in to the chip from the axicon, and measuring the out-coupled light from a grating coupler. Further, we also present the implementation of balanced homodyne detection method for the spectral characterization of the device and show that the position of the output lobe of the axicon does not change significantly with wavelength.
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Submitted 12 August, 2020;
originally announced August 2020.
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Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance
Authors:
R. M. Jock,
S. Shankar,
A. M. Tyryshkin,
Jianhua He,
K. Eng,
K. D. Childs,
L. A. Tracy,
M. P. Lilly,
M. S. Carroll,
S. A. Lyon
Abstract:
We present an electron spin resonance (ESR) approach to characterize shallow electron trap** in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO2 interface qualit…
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We present an electron spin resonance (ESR) approach to characterize shallow electron trap** in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO2 interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO2 interface quality at low electron densities, where conventional mobility measurements are not possible.
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Submitted 2 December, 2011; v1 submitted 4 October, 2011;
originally announced October 2011.
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Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
Authors:
L. A. Tracy,
E. P. Nordberg,
R. W. Young,
C. Borras Pinilla,
H. L. Stalford,
G. A. Ten Eyck,
K. Eng,
K. D. Childs,
J. Stevens,
M. P. Lilly,
M. A. Eriksson,
M. S. Carroll
Abstract:
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages applied. Intriguingly, these gate voltages themselves are not symmetric. Comparison with numerical simulations indicates that the applied gate voltages se…
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We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages applied. Intriguingly, these gate voltages themselves are not symmetric. Comparison with numerical simulations indicates that the applied gate voltages serve to offset an intrinsic asymmetry in the physical device. We also show a transition from a large single dot to two well isolated coupled dots, where the central gate of the device is used to controllably tune the interdot coupling.
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Submitted 29 October, 2010;
originally announced November 2010.
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Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots
Authors:
E. P. Nordberg,
H. L. Stalford,
R. Young,
G. A. Ten Eyck,
K. Eng,
L. A. Tracy,
K. D. Childs,
J. R. Wendt,
R. K. Grubbs,
J. Stevens,
M. P. Lilly,
M. A. Eriksson,
M. S. Carroll
Abstract:
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated MOS system. The current through a point contact constriction integrated near a quantum dot shows sharp 2% changes corresponding to charge transitions between t…
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Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated MOS system. The current through a point contact constriction integrated near a quantum dot shows sharp 2% changes corresponding to charge transitions between the dot and a nearby lead. We extract the coupling capacitance between the charge sensor and the quantum dot, and we show that it agrees well with a 3D capacitance model of the integrated sensor and quantum dot system.
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Submitted 18 September, 2009;
originally announced September 2009.
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Enhancement mode double top gated MOS nanostructures with tunable lateral geometry
Authors:
E. P. Nordberg,
G. A. Ten Eyck,
H. L. Stalford,
R. P. Muller,
R. W. Young,
K. Eng,
L. A. Tracy,
K. D. Childs,
J. R. Wendt,
R. K. Grubbs,
J. Stevens,
M. P. Lilly,
M. A. Eriksson,
M. S. Carroll
Abstract:
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot formation is exhibited in several MOS quantum dots with an open lateral quantum dot geometry. Decreases in mobility and increases in charge defect…
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We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot formation is exhibited in several MOS quantum dots with an open lateral quantum dot geometry. Decreases in mobility and increases in charge defect densities (i.e. interface traps and fixed oxide charge) are measured for critical process steps, and we correlate low disorder behavior with a quantitative defect density. This work provides quantitative guidance that has not been previously established about defect densities for which Si quantum dots do not exhibit parasitic dot formation. These devices make use of a double-layer gate stack in which many regions, including the critical gate oxide, were fabricated in a fully-qualified CMOS facility.
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Submitted 11 September, 2009; v1 submitted 19 June, 2009;
originally announced June 2009.
