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Nonequilibrium magnonic thermal transport engineering
Authors:
Takamasa Hirai,
Toshiaki Morita,
Subrata Biswas,
Jun Uzuhashi,
Takashi Yagi,
Yuichiro Yamashita,
Varun Kushwaha Kumar,
Fuya Makino,
Rajkumar Modak,
Yuya Sakuraba,
Tadakatsu Ohkubo,
Rulei Guo,
Bin Xu,
Junichiro Shiomi,
Daichi Chiba,
Ken-ichi Uchida
Abstract:
Thermal conductivity, a fundamental parameter characterizing thermal transport in solids, is typically determined by electron and phonon transport. Although other transport properties including electrical conductivity and thermoelectric conversion coefficients have material-specific values, it is known that thermal conductivity can be modulated artificially via phonon engineering techniques. Here,…
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Thermal conductivity, a fundamental parameter characterizing thermal transport in solids, is typically determined by electron and phonon transport. Although other transport properties including electrical conductivity and thermoelectric conversion coefficients have material-specific values, it is known that thermal conductivity can be modulated artificially via phonon engineering techniques. Here, we demonstrate another way of artificially modulating the heat conduction in solids: magnonic thermal transport engineering. The time-domain thermoreflectance measurements using ferromagnetic metal/insulator junction systems reveal that the thermal conductivity of the ferromagnetic metals and interfacial thermal conductance vary significantly depending on the spatial distribution of nonequilibrium spin currents. Systematic measurements of the thermal transport properties with changing the boundary conditions for spin currents show that the observed thermal transport modulation stems from magnon origin. This observation unveils that magnons significantly contribute to the heat conduction even in ferromagnetic metals at room temperature, upsetting the conventional wisdom that the thermal conductivity mediated by magnons is very small in metals except at low temperatures. The magnonic thermal transport engineering offers a new principle and method for active thermal management.
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Submitted 6 March, 2024;
originally announced March 2024.
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ChatSpamDetector: Leveraging Large Language Models for Effective Phishing Email Detection
Authors:
Takashi Koide,
Naoki Fukushi,
Hiroki Nakano,
Daiki Chiba
Abstract:
The proliferation of phishing sites and emails poses significant challenges to existing cybersecurity efforts. Despite advances in spam filters and email security protocols, problems with oversight and false positives persist. Users often struggle to understand why emails are flagged as spam, risking the possibility of missing important communications or mistakenly trusting phishing emails.
This…
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The proliferation of phishing sites and emails poses significant challenges to existing cybersecurity efforts. Despite advances in spam filters and email security protocols, problems with oversight and false positives persist. Users often struggle to understand why emails are flagged as spam, risking the possibility of missing important communications or mistakenly trusting phishing emails.
This study introduces ChatSpamDetector, a system that uses large language models (LLMs) to detect phishing emails. By converting email data into a prompt suitable for LLM analysis, the system provides a highly accurate determination of whether an email is phishing or not. Importantly, it offers detailed reasoning for its phishing determinations, assisting users in making informed decisions about how to handle suspicious emails. We conducted an evaluation using a comprehensive phishing email dataset and compared our system to several LLMs and baseline systems. We confirmed that our system using GPT-4 has superior detection capabilities with an accuracy of 99.70%. Advanced contextual interpretation by LLMs enables the identification of various phishing tactics and impersonations, making them a potentially powerful tool in the fight against email-based phishing threats.
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Submitted 28 February, 2024;
originally announced February 2024.
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PhishReplicant: A Language Model-based Approach to Detect Generated Squatting Domain Names
Authors:
Takashi Koide,
Naoki Fukushi,
Hiroki Nakano,
Daiki Chiba
Abstract:
Domain squatting is a technique used by attackers to create domain names for phishing sites. In recent phishing attempts, we have observed many domain names that use multiple techniques to evade existing methods for domain squatting. These domain names, which we call generated squatting domains (GSDs), are quite different in appearance from legitimate domain names and do not contain brand names, m…
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Domain squatting is a technique used by attackers to create domain names for phishing sites. In recent phishing attempts, we have observed many domain names that use multiple techniques to evade existing methods for domain squatting. These domain names, which we call generated squatting domains (GSDs), are quite different in appearance from legitimate domain names and do not contain brand names, making them difficult to associate with phishing. In this paper, we propose a system called PhishReplicant that detects GSDs by focusing on the linguistic similarity of domain names. We analyzed newly registered and observed domain names extracted from certificate transparency logs, passive DNS, and DNS zone files. We detected 3,498 domain names acquired by attackers in a four-week experiment, of which 2,821 were used for phishing sites within a month of detection. We also confirmed that our proposed system outperformed existing systems in both detection accuracy and number of domain names detected. As an in-depth analysis, we examined 205k GSDs collected over 150 days and found that phishing using GSDs was distributed globally. However, attackers intensively targeted brands in specific regions and industries. By analyzing GSDs in real time, we can block phishing sites before or immediately after they appear.
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Submitted 18 October, 2023;
originally announced October 2023.
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Detecting Phishing Sites Using ChatGPT
Authors:
Takashi Koide,
Naoki Fukushi,
Hiroki Nakano,
Daiki Chiba
Abstract:
The emergence of Large Language Models (LLMs), including ChatGPT, is having a significant impact on a wide range of fields. While LLMs have been extensively researched for tasks such as code generation and text synthesis, their application in detecting malicious web content, particularly phishing sites, has been largely unexplored. To combat the rising tide of cyber attacks due to the misuse of LL…
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The emergence of Large Language Models (LLMs), including ChatGPT, is having a significant impact on a wide range of fields. While LLMs have been extensively researched for tasks such as code generation and text synthesis, their application in detecting malicious web content, particularly phishing sites, has been largely unexplored. To combat the rising tide of cyber attacks due to the misuse of LLMs, it is important to automate detection by leveraging the advanced capabilities of LLMs.
In this paper, we propose a novel system called ChatPhishDetector that utilizes LLMs to detect phishing sites. Our system involves leveraging a web crawler to gather information from websites, generating prompts for LLMs based on the crawled data, and then retrieving the detection results from the responses generated by the LLMs. The system enables us to detect multilingual phishing sites with high accuracy by identifying impersonated brands and social engineering techniques in the context of the entire website, without the need to train machine learning models. To evaluate the performance of our system, we conducted experiments on our own dataset and compared it with baseline systems and several LLMs. The experimental results using GPT-4V demonstrated outstanding performance, with a precision of 98.7% and a recall of 99.6%, outperforming the detection results of other LLMs and existing systems. These findings highlight the potential of LLMs for protecting users from online fraudulent activities and have important implications for enhancing cybersecurity measures.
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Submitted 14 February, 2024; v1 submitted 9 June, 2023;
originally announced June 2023.
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Canary in Twitter Mine: Collecting Phishing Reports from Experts and Non-experts
Authors:
Hiroki Nakano,
Daiki Chiba,
Takashi Koide,
Naoki Fukushi,
Takeshi Yagi,
Takeo Hariu,
Katsunari Yoshioka,
Tsutomu Matsumoto
Abstract:
The rise in phishing attacks via e-mail and short message service (SMS) has not slowed down at all. The first thing we need to do to combat the ever-increasing number of phishing attacks is to collect and characterize more phishing cases that reach end users. Without understanding these characteristics, anti-phishing countermeasures cannot evolve. In this study, we propose an approach using Twitte…
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The rise in phishing attacks via e-mail and short message service (SMS) has not slowed down at all. The first thing we need to do to combat the ever-increasing number of phishing attacks is to collect and characterize more phishing cases that reach end users. Without understanding these characteristics, anti-phishing countermeasures cannot evolve. In this study, we propose an approach using Twitter as a new observation point to immediately collect and characterize phishing cases via e-mail and SMS that evade countermeasures and reach users. Specifically, we propose CrowdCanary, a system capable of structurally and accurately extracting phishing information (e.g., URLs and domains) from tweets about phishing by users who have actually discovered or encountered it. In our three months of live operation, CrowdCanary identified 35,432 phishing URLs out of 38,935 phishing reports, 31,960 (90.2%) of these phishing URLs were later detected by the anti-virus engine. We analyzed users who shared phishing threats by categorizing them into two groups: experts and non-experts. As a results, we discovered that CrowdCanary extracts non-expert report-specific information, like company brand name in tweets, phishing attack details from tweet images, and pre-redirect landing page information.
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Submitted 6 June, 2023; v1 submitted 28 March, 2023;
originally announced March 2023.
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Tuning the hysteresis loop for the anomalous Hall effect in Pt ultrathin films on $\rm{CoFe_2O_4}$ by electrolyte gating
Authors:
Leon Sakakibara,
Yumiko Katayama,
Tomohiro Koyama,
Daichi Chiba,
Kazunori Ueno
Abstract:
Pt ultrathin films on ferromagnetic insulators have been widely studied for spintronics applications, and magnetic moments of interface Pt atoms were considered to be ferromagnetically ordered due to a magnetic proximity effect (MPE). An anomalous Hall effect (AHE) is usually used to examine an out-of-plane magnetic moments of the Pt layer. To tune ferromagnetic properties of an Pt ultrathin film,…
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Pt ultrathin films on ferromagnetic insulators have been widely studied for spintronics applications, and magnetic moments of interface Pt atoms were considered to be ferromagnetically ordered due to a magnetic proximity effect (MPE). An anomalous Hall effect (AHE) is usually used to examine an out-of-plane magnetic moments of the Pt layer. To tune ferromagnetic properties of an Pt ultrathin film, we fabricated electric double layer transistors on Pt thin films with thicknesses of 5.9 nm and 7.0 nm on a $\rm{CoFe_2O_4}$ (CFO) ferrimagnetic insulator. For the Pt (7.0 nm)/CFO sample, a hysteresis loop was observed in the anomalous Hall resistivity without the gate bias, and the coercive field was tuned by applying the gate bias. For the Pt (5.9 nm)/CFO sample, a hysteresis loop was not observed without a gate bias, but was opened by applying a gate bias ($V\rm{_G} =$ $\pm$3 V). This indicated that the long-range ferromagnetic ordering of magnetic moments in the Pt film was switched on and off by the electric field effect. The hysteresis loop was observed up to 19.5 K for a $V\rm{_G}$ of +3 V, while the AHE was observed up to approximately room temperature.
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Submitted 30 October, 2022; v1 submitted 20 September, 2022;
originally announced September 2022.
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A First Look at COVID-19 Domain Names: Origin and Implications
Authors:
Ryo Kawaoka,
Daiki Chiba,
Takuya Watanabe,
Mitsuaki Akiyama,
Tatsuya Mori
Abstract:
This work takes a first look at domain names related to COVID-19 (Cov19doms in short), using a large-scale registered Internet domain name database, which accounts for 260M of distinct domain names registered for 1.6K of distinct top-level domains. We extracted 167K of Cov19doms that have been registered between the end of December 2019 and the end of September 2020. We attempt to answer the follo…
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This work takes a first look at domain names related to COVID-19 (Cov19doms in short), using a large-scale registered Internet domain name database, which accounts for 260M of distinct domain names registered for 1.6K of distinct top-level domains. We extracted 167K of Cov19doms that have been registered between the end of December 2019 and the end of September 2020. We attempt to answer the following research questions through our measurement study: RQ1: Is the number of Cov19doms registrations correlated with the COVID-19 outbreaks?, RQ2: For what purpose do people register Cov19doms? Our chief findings are as follows: (1) Similar to the global COVID-19 pandemic observed around April 2020, the number of Cov19doms registrations also experienced the drastic growth, which, interestingly, pre-ceded the COVID-19 pandemic by about a month, (2) 70 % of active Cov19doms websites with visible content provided useful information such as health, tools, or product sales related to COVID-19, and (3) non-negligible number of registered Cov19doms was used for malicious purposes. These findings imply that it has become more challenging to distinguish domain names registered for legitimate purposes from others and that it is crucial to pay close attention to how Cov19doms will be used/misused in the future.
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Submitted 10 February, 2021;
originally announced February 2021.
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ShamFinder: An Automated Framework for Detecting IDN Homographs
Authors:
Hiroaki Suzuki,
Daiki Chiba,
Yoshiro Yoneya,
Tatsuya Mori,
Shigeki Goto
Abstract:
The internationalized domain name (IDN) is a mechanism that enables us to use Unicode characters in domain names. The set of Unicode characters contains several pairs of characters that are visually identical with each other; e.g., the Latin character 'a' (U+0061) and Cyrillic character 'a' (U+0430). Visually identical characters such as these are generally known as homoglyphs. IDN homograph attac…
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The internationalized domain name (IDN) is a mechanism that enables us to use Unicode characters in domain names. The set of Unicode characters contains several pairs of characters that are visually identical with each other; e.g., the Latin character 'a' (U+0061) and Cyrillic character 'a' (U+0430). Visually identical characters such as these are generally known as homoglyphs. IDN homograph attacks, which are widely known, abuse Unicode homoglyphs to create lookalike URLs. Although the threat posed by IDN homograph attacks is not new, the recent rise of IDN adoption in both domain name registries and web browsers has resulted in the threat of these attacks becoming increasingly widespread, leading to large-scale phishing attacks such as those targeting cryptocurrency exchange companies. In this work, we developed a framework named "ShamFinder," which is an automated scheme to detect IDN homographs. Our key contribution is the automatic construction of a homoglyph database, which can be used for direct countermeasures against the attack and to inform users about the context of an IDN homograph. Using the ShamFinder framework, we perform a large-scale measurement study that aims to understand the IDN homographs that exist in the wild. On the basis of our approach, we provide insights into an effective counter-measure against the threats caused by the IDN homograph attack.
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Submitted 16 September, 2019;
originally announced September 2019.
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Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers
Authors:
Kosuke Takiguchi,
Le Duc Anh,
Takahiro Chiba,
Tomohiro Koyama,
Daichi Chiba,
Masaaki Tanaka
Abstract:
The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance (MR), such as giant magnetoresistance (GMR) and tunnelling magnetoresistance (TMR) in magnetic multilayers. Recently, new types of MR have been observed in much simpler bilayers consisting of ferromagnetic (FM)/nonmagnetic (NM) thin films; however, the magnitude of MR in these materials…
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The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance (MR), such as giant magnetoresistance (GMR) and tunnelling magnetoresistance (TMR) in magnetic multilayers. Recently, new types of MR have been observed in much simpler bilayers consisting of ferromagnetic (FM)/nonmagnetic (NM) thin films; however, the magnitude of MR in these materials is very small (0.01 ~ 1%). Here, we demonstrate that NM/FM bilayers consisting of a NM InAs quantum well conductive channel and an insulating FM (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance (PMR) (~80% at 14 T). This PMR is two orders of magnitude larger than the MR observed in NM/FM bilayers reported to date, and its magnitude can be controlled by a gate voltage. These results are explained by the penetration of the InAs two-dimensional-electron wavefunction into (Ga,Fe)Sb. The ability to strongly modulate the NM channel current by both electrical and magnetic gating represents a new concept of magnetic-gating spin transistors.
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Submitted 27 December, 2018;
originally announced December 2018.
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Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor
Authors:
Toshiki Kanaki,
Hiroki Yamasaki,
Tomohiro Koyama,
Daichi Chiba,
Shinobu Ohya,
Masaaki Tanaka
Abstract:
A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demonstrate a large drain-source current IDS modulation by a gate-source voltage VGS with a modulation ratio up to 130%, which is the largest value that has…
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A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demonstrate a large drain-source current IDS modulation by a gate-source voltage VGS with a modulation ratio up to 130%, which is the largest value that has ever been reported for vertical spin field-effect transistors thus far. We find that the electric field effect on indirect tunneling via defect states in the GaAs channel layer is responsible for the large IDS modulation. This device shows a tunneling magnetoresistance (TMR) ratio up to ~7%, which is larger than that of the planar-type spin MOSFETs, indicating that IDS can be controlled by the magnetization configuration. Furthermore, we find that the TMR ratio can be modulated by VGS. This result mainly originates from the electric field modulation of the magnetic anisotropy of the GaMnAs ferromagnetic electrodes as well as the potential modulation of the nonmagnetic semiconductor GaAs channel layer. Our findings provide important progress towards high-performance vertical spin MOSFETs.
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Submitted 5 January, 2018;
originally announced January 2018.
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Microscopic origin of electric-field-induced modulation of Curie temperature in cobalt
Authors:
Fuyuki Ando,
Kihiro T. Yamada,
Tomohiro Koyama,
Mio Ishibashi,
Yoichi Shiota,
Takahiro Moriyama,
Daichi Chiba,
Teruo Ono
Abstract:
The Curie temperature is one of the most fundamental physical properties of ferromagnetic materials and can be described by Weiss molecular field theory with the exchange interaction of neighboring atoms. Recently, the electric-field-induced modulation of the Curie temperature has been demonstrated in transition metals. This can be interpreted as indirect evidence for the electrical modulation of…
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The Curie temperature is one of the most fundamental physical properties of ferromagnetic materials and can be described by Weiss molecular field theory with the exchange interaction of neighboring atoms. Recently, the electric-field-induced modulation of the Curie temperature has been demonstrated in transition metals. This can be interpreted as indirect evidence for the electrical modulation of exchange coupling. However, the scenario has not yet been experimentally verified. Here, we demonstrate the electrical control of exchange coupling in cobalt film from direct magnetization measurements. We find that the reduction in magnetization with temperature, which is caused by thermal spin wave excitation and scales with Bloch's law, clearly depends on the applied electric field. Furthermore, we confirm that the correlation between the electric-field-induced modulation of the Curie temperature and that of exchange coupling follows Weiss molecular field theory.
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Submitted 6 November, 2017;
originally announced November 2017.
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Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers
Authors:
Tian Li,
Sanghoon Kim,
Seung-Jae Lee,
Seo-Won Lee,
Tomohiro Koyama,
Daichi Chiba,
Takahiro Moriyama,
Kyung-** Lee,
Kab-** Kim,
Teruo Ono
Abstract:
An asymmetric magnetoresistance (MR) is investigated in Py/Pt bilayers. The asymmetric MR linearly increases with current density up to a threshold, and increases more rapidly above the threshold. To reveal the origin of threshold behavior, we investigate the magnetic field dependence of the asymmetric MR. It is found that the magnetic field strongly suppresses the asymmetric MR only above the thr…
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An asymmetric magnetoresistance (MR) is investigated in Py/Pt bilayers. The asymmetric MR linearly increases with current density up to a threshold, and increases more rapidly above the threshold. To reveal the origin of threshold behavior, we investigate the magnetic field dependence of the asymmetric MR. It is found that the magnetic field strongly suppresses the asymmetric MR only above the threshold current density. Micromagnetic simulation reveals that the reduction of magnetization due to the spin-torque oscillation can be the origin of the threshold behavior of asymmetric MR.
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Submitted 29 May, 2017;
originally announced May 2017.
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Microscopic Origin of Interfacial Dzyaloshinskii-Moriya Interaction
Authors:
Sanghoon Kim,
Kohei Ueda,
Gyungchoon Go,
Peong-Hwa Jang,
Kyung-** Lee,
Abderrezak Belabbes,
Aurelien Manchon,
Motohiro Suzuki,
Yoshinori Kotani,
Tetsuya Nakamura,
Kohji Nakamura,
Tomohiro Koyama,
Daichi Chiba,
Kihiro Yamada,
Duck-Ho Kim,
Takahiro Moriyama,
Kab-** Kim,
Teruo Ono
Abstract:
Chiral spin textures at the interface between ferromagnetic and heavy nonmagnetic metals, such as Neel-type domain walls and skyrmions, have been studied intensively because of their great potential for future nanomagnetic devices. The Dyzaloshinskii-Moriya interaction (DMI) is an essential phenomenon for the formation of such chiral spin textures. In spite of recent theoretical progress aiming at…
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Chiral spin textures at the interface between ferromagnetic and heavy nonmagnetic metals, such as Neel-type domain walls and skyrmions, have been studied intensively because of their great potential for future nanomagnetic devices. The Dyzaloshinskii-Moriya interaction (DMI) is an essential phenomenon for the formation of such chiral spin textures. In spite of recent theoretical progress aiming at understanding the microscopic origin of the DMI, an experimental investigation unravelling the physics at stake is still required. Here, we experimentally demonstrate the close correlation of the DMI with the anisotropy of the orbital magnetic moment and with the magnetic dipole moment of the ferromagnetic metal. The density functional theory and the tight-binding model calculations reveal that asymmetric electron occupation in orbitals gives rise to this correlation.
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Submitted 10 April, 2017;
originally announced April 2017.
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Electric field modulation of the non-linear areal magnetic anisotropy energy
Authors:
Yong-Chang Lau,
Peng Sheng,
Seiji Mitani,
Daichi Chiba,
Masamitsu Hayashi
Abstract:
We study the ferromagnetic layer thickness dependence of the voltage-controlled magnetic anisotropy (VCMA) in gated CoFeB/MgO heterostructures with heavy metal underlayers. When the effective CoFeB thickness is below ~1 nm, the VCMA efficiency of Ta/CoFeB/MgO heterostructures considerably decreases with decreasing CoFeB thickness. We find that a high order phenomenological term used to describe th…
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We study the ferromagnetic layer thickness dependence of the voltage-controlled magnetic anisotropy (VCMA) in gated CoFeB/MgO heterostructures with heavy metal underlayers. When the effective CoFeB thickness is below ~1 nm, the VCMA efficiency of Ta/CoFeB/MgO heterostructures considerably decreases with decreasing CoFeB thickness. We find that a high order phenomenological term used to describe the thickness dependence of the areal magnetic anisotropy energy can also account for the change in the areal VCMA efficiency. In this structure, the higher order term competes against the common interfacial VCMA, thereby reducing the efficiency at lower CoFeB thickness. The areal VCMA efficiency does not saturate even when the effective CoFeB thickness exceeds ~1 nm. We consider the higher order term is related to the strain that develops at the CoFeB/MgO interface: as the average strain of the CoFeB layer changes with its thickness, the electronic structure of the CoFeB/MgO interface varies leading to changes in areal magnetic anisotropy energy and VCMA efficiency.
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Submitted 15 January, 2017;
originally announced January 2017.
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Spin-dependent transport and current modulation in a current-in-plane field-effect transistor
Authors:
Toshiki Kanaki,
Tomohiro Koyama,
Daichi Chiba,
Shinobu Ohya,
Masaaki Tanaka
Abstract:
We propose a current-in-plane spin-valve field-effect transistor (CIP-SV-FET), which is composed of a ferromagnet / nonferromagnet / ferromagnet trilayer structure and a gate electrode. This is a promising device alternative to spin metal-oxide-semiconductor field-effect transistors. Here, we fabricate a ferromagnetic-semiconductor GaMnAs-based CIP-SV-FET and demonstrate its basic operation of the…
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We propose a current-in-plane spin-valve field-effect transistor (CIP-SV-FET), which is composed of a ferromagnet / nonferromagnet / ferromagnet trilayer structure and a gate electrode. This is a promising device alternative to spin metal-oxide-semiconductor field-effect transistors. Here, we fabricate a ferromagnetic-semiconductor GaMnAs-based CIP-SV-FET and demonstrate its basic operation of the resistance modulation both by the magnetization configuration and by the gate electric field. Furthermore, we present the electric-field-assisted magnetization reversal in this device.
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Submitted 13 September, 2016;
originally announced September 2016.
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Giant modulation of the magnetic domain size induced by an electric field
Authors:
Fuyuki Ando,
Haruka Kakizakai,
Tomohiro Koyama,
Kihiro Yamada,
Masashi Kawaguchi,
Sangohoon Kim,
Kab-** Kim,
Takahiro Moriyama,
Daichi Chiba,
Teruo Ono
Abstract:
The electric field (EF) effect on the magnetic domain structure of a Pt/Co system was studied, where an EF was applied to the top surface of the Co layer. The width of the maze domain was significantly modified by the application of the EF at a temperature slightly below the Curie temperature. After a detailed analysis, a change in the exchange stiffness induced by the EF application was suggested…
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The electric field (EF) effect on the magnetic domain structure of a Pt/Co system was studied, where an EF was applied to the top surface of the Co layer. The width of the maze domain was significantly modified by the application of the EF at a temperature slightly below the Curie temperature. After a detailed analysis, a change in the exchange stiffness induced by the EF application was suggested to dominate the modulation of the domain width observed in the experiment. The accumulation of electrons at the surface of the Co layer resulted in an increase of the exchange stiffness and the Curie temperature. The result was consistent with the recent theoretical prediction.
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Submitted 10 April, 2016;
originally announced April 2016.
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Current-induced asymmetric magnetoresistance due to energy transfer via quantum spin-flip process
Authors:
K. J. Kim,
T. Moriyama,
T. Koyama,
D. Chiba,
S. W. Lee,
S. J. Lee,
K. J. Lee,
H. W. Lee,
T. Ono
Abstract:
Current-induced magnetization excitation is a core phenomenon for next-generation magnetic nanodevices, and has been attributed to the spin-transfer torque (STT) that originates from the transfer of the spin angular momentum between a conduction electron and a local magnetic moment through the exchange coupling. However, the same coupling can transfer not only spin but also energy, though the latt…
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Current-induced magnetization excitation is a core phenomenon for next-generation magnetic nanodevices, and has been attributed to the spin-transfer torque (STT) that originates from the transfer of the spin angular momentum between a conduction electron and a local magnetic moment through the exchange coupling. However, the same coupling can transfer not only spin but also energy, though the latter transfer mechanism has been largely ignored. Here we report on experimental evidence concerning the energy transfer in ferromagnet/heavy metal bilayers. The magnetoresistance (MR) is found to depend significantly on the current direction down to low in-plane currents, for which STT cannot play any significant role. Instead we find that the observed MR is consistent with the energy transfer mechanism through the quantum spin-flip process, which predicts short wavelength, current-direction-dependent magnon excitations in the THz frequency range. Our results unveil another aspect of current-induced magnetic excitation, and open a channel for the dc-current-induced generation of THz magnons.
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Submitted 29 March, 2016;
originally announced March 2016.
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Switching local magnetization by electric-field-induced domain wall motion
Authors:
H. Kakizakai,
F. Ando,
T. Koyama,
K. Yamada,
M. Kawaguchi,
S. Kim,
K. -J. Kim,
T. Moriyama,
D. Chiba,
T. Ono
Abstract:
Electric field effect on magnetism is an appealing technique for manipulating the magnetization at a low cost of energy. Here, we show that the local magnetization of the ultra-thin Co film can be switched by just applying a gate electric field without an assist of any external magnetic field or current flow. The local magnetization switching is explained by the nucleation and annihilation of the…
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Electric field effect on magnetism is an appealing technique for manipulating the magnetization at a low cost of energy. Here, we show that the local magnetization of the ultra-thin Co film can be switched by just applying a gate electric field without an assist of any external magnetic field or current flow. The local magnetization switching is explained by the nucleation and annihilation of the magnetic domain through the domain wall motion induced by the electric field. Our results lead to external field free and ultra-low energy spintronic applications.
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Submitted 29 March, 2016;
originally announced March 2016.
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Extraction of the Anomalous Nernst Effect in the Electric Measurement of the Spin Orbit Torque
Authors:
M. Kawaguchi,
T. Moriyama,
H. Mizuno,
K. Yamada,
H. Kakizakai,
T. Koyama,
D. Chiba,
T. Ono
Abstract:
Spin orbit torque has been intensively investigated because of its high energy efficiency in manipulating a magnetization. Although various methods for measuring the spin orbit torque have been developed so far, the measurement results often show inconsistency among the methods, implying that an electromotive force, such as Nernst effect, irrelevant to the spin orbit torque may affect the measurem…
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Spin orbit torque has been intensively investigated because of its high energy efficiency in manipulating a magnetization. Although various methods for measuring the spin orbit torque have been developed so far, the measurement results often show inconsistency among the methods, implying that an electromotive force, such as Nernst effect, irrelevant to the spin orbit torque may affect the measurement results as an artifact. In this letter, we developed a unique method to distinguish the spin orbit torque and the anomalous Nernst effect. The measurement results show that the spin orbit torque can be underestimated up to 50% under the influence of the anomalous Nernst effect.
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Submitted 14 October, 2015;
originally announced October 2015.
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Experimental Proof of Universal Conductance Fluctuation in Quasi-1D Epitaxial Bi$_{2}$Se$_{3}$ Wires
Authors:
Sadashige Matsuo,
Kensaku Chida,
Daichi Chiba,
Teruo Ono,
Keith Slevin,
Kensuke Kobayashi,
Tomi Ohtsuki,
Cui-Zu Chang,
Ke He,
Xu-Cun Ma,
Qi-Kun Xue
Abstract:
We report on conductance fluctuation in quasi-one-dimensional wires made of epitaxial Bi$_{2}$Se$_{3}$ thin film. We found that this type of fluctuation decreases as the wire length becomes longer and that the amplitude of the fluctuation is well scaled to the coherence, thermal diffusion, and wire lengths, as predicted by conventional universal conductance fluctuation (UCF) theory. Additionally,…
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We report on conductance fluctuation in quasi-one-dimensional wires made of epitaxial Bi$_{2}$Se$_{3}$ thin film. We found that this type of fluctuation decreases as the wire length becomes longer and that the amplitude of the fluctuation is well scaled to the coherence, thermal diffusion, and wire lengths, as predicted by conventional universal conductance fluctuation (UCF) theory. Additionally, the amplitude of the fluctuation can be understood to be equivalent to the UCF amplitude of a system with strong spin-orbit interaction and no time-reversal symmetry. These results indicate that the conductance fluctuation in Bi$_{2}$Se$_{3}$ wires is explainable through UCF theory. This work is the first to verify the scaling relationship of UCF in a system with strong spin-orbit interaction.
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Submitted 25 October, 2013;
originally announced October 2013.
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Low-frequency and shot noises in CoFeB/MgO/CoFeB magnetic tunneling junctions
Authors:
Tomonori Arakawa,
Takahiro Tanaka,
Kensaku Chida,
Sadashige Matsuo,
Yoshitaka Nishihara,
Daichi Chiba,
Kensuke Kobayashi,
Teruo Ono,
Akio Fukushima,
Shinji Yuasa
Abstract:
The low-frequency and shot noises in spin-valve CoFeB/MgO/CoFeB magnetic tunneling junctions were studied at low temperature. The measured 1/f noise around the magnetic hysteresis loops of the free layer indicates that the main origin of the 1/f noise is the magnetic fluctuation, which is discussed in terms of a fluctuation-dissipation relation. Random telegraph noise (RTN) is observed to be symme…
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The low-frequency and shot noises in spin-valve CoFeB/MgO/CoFeB magnetic tunneling junctions were studied at low temperature. The measured 1/f noise around the magnetic hysteresis loops of the free layer indicates that the main origin of the 1/f noise is the magnetic fluctuation, which is discussed in terms of a fluctuation-dissipation relation. Random telegraph noise (RTN) is observed to be symmetrically enhanced in the hysteresis loop with regard to the two magnetic configurations. We found that this enhancement is caused by the fluctuation between two magnetic states in the free layer. Although the 1/f noise is almost independent of the magnetic configuration, the RTN is enhanced in the antiparallel configuration. These findings indicate the presence of spin-dependent activation of RTN. Shot noise reveals the spin-dependent coherent tunneling process via a crystalline MgO barrier.
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Submitted 9 January, 2013;
originally announced January 2013.
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Observation of finite excess noise in the voltage-biased quantum Hall regime as a precursor for breakdown
Authors:
Kensaku Chida,
Tomonori Arakawa,
Sadashige Matsuo,
Yoshitaka Nishihara,
Takahiro Tanaka,
Daichi Chiba,
Teruo Ono,
Tokuro Hata,
Kensuke Kobayashi,
Tomoki Machida
Abstract:
We performed noise measurements in a two-dimensional electron gas to investigate the nonequilibrium quantum Hall effect (QHE) state. While excess noise is perfectly suppressed around the zero-biased QHE state reflecting the dissipationless electron transport of the QHE state, considerable finite excess noise is observed in the breakdown regime of the QHE. The noise temperature deduced from the exc…
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We performed noise measurements in a two-dimensional electron gas to investigate the nonequilibrium quantum Hall effect (QHE) state. While excess noise is perfectly suppressed around the zero-biased QHE state reflecting the dissipationless electron transport of the QHE state, considerable finite excess noise is observed in the breakdown regime of the QHE. The noise temperature deduced from the excess noise is found to be of the same order as the energy gap between the highest occupied Landau level and the lowest empty one. Moreover, unexpected finite excess noise is observed at a finite source-drain bias voltagesmaller than the onset voltage of the QHE breakdown, which indicates finite dissipation in the QHE state and may be related to the prebreakdown of the QHE.
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Submitted 24 April, 2013; v1 submitted 27 November, 2012;
originally announced November 2012.
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Signature of Coherent Transport in Epitaxial Spinel-based Magnetic Tunnel Junctions Probed by Shot Noise Measurement
Authors:
Takahiro Tanaka,
Tomonori Arakawa,
Kensaku Chida,
Yoshitaka Nishihara,
Daichi Chiba,
Kensuke Kobayashi,
Teruo Ono,
Hiroaki Sukegawa,
Shinya Kasai,
Seiji Mitani
Abstract:
We measured the shot noise in fully epitaxial Fe/MgAl2OX/Fe-based magnetic tunneling junctions (MTJs). While the Fano factor to characterize the shot noise is very close to unity in the antiparallel configuration, it is reduced to 0.98 in the parallel configuration. This observation shows the sub-Poissonian process of electron tunneling in the parallel configuration, indicating the coherent tunnel…
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We measured the shot noise in fully epitaxial Fe/MgAl2OX/Fe-based magnetic tunneling junctions (MTJs). While the Fano factor to characterize the shot noise is very close to unity in the antiparallel configuration, it is reduced to 0.98 in the parallel configuration. This observation shows the sub-Poissonian process of electron tunneling in the parallel configuration, indicating the coherent tunneling through the spinel-based tunneling barrier of the MTJ.
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Submitted 31 May, 2012;
originally announced May 2012.
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Weak Antilocalization and Conductance Fluctuation in a Sub-micrometer-sized Wire of Epitaxial Bi2Se3
Authors:
Sadashige Matsuo,
Tomohiro Koyama,
Kazutoshi Shimamura,
Tomonori Arakawa,
Yoshitaka Nishihara,
Daichi Chiba,
Kensuke Kobayashi,
Teruo Ono,
Cui-Zu Chang,
Ke He,
Xu-Cun Ma,
Qi-Kun Xue
Abstract:
In this study, we address the phase coherent transport in a sub-micrometer-sized Hall bar made of epitaxial Bi2Se3 thin film by probing the weak antilocalization (WAL) and the magnetoresistance fluctuation below 22 K. The WAL effect is well described by the Hikami-Larkin-Nagaoka model, where the temperature dependence of the coherence length indicates that electron conduction occurs quasi-one-dime…
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In this study, we address the phase coherent transport in a sub-micrometer-sized Hall bar made of epitaxial Bi2Se3 thin film by probing the weak antilocalization (WAL) and the magnetoresistance fluctuation below 22 K. The WAL effect is well described by the Hikami-Larkin-Nagaoka model, where the temperature dependence of the coherence length indicates that electron conduction occurs quasi-one-dimensionally in the narrow Hall bar. The temperature-dependent magnetoresistance fluctuation is analyzed in terms of the universal conductance fluctuation, which gives a coherence length consistent with that derived from the WAL effect.
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Submitted 28 February, 2012; v1 submitted 16 January, 2012;
originally announced January 2012.
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Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions
Authors:
Tomonori Arakawa,
Koji Sekiguchi,
Shuji Nakamura,
Kensaku Chida,
Yoshitaka Nishihara,
Daichi Chiba,
Kensuke Kobayashi,
Akio Fukushima,
Shinji Yuasa,
Teruo Ono
Abstract:
We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunneling junctions with a high tunneling magnetoresistance ratio (over 200% at 3 K). Although the Fano factor in the anti-parallel configuration is close to unity, it is observed to be typically 0.91\pm0.01 in the parallel configuration. It indicates the sub-Poissonian process of the electron tunneling in the parallel configuration…
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We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunneling junctions with a high tunneling magnetoresistance ratio (over 200% at 3 K). Although the Fano factor in the anti-parallel configuration is close to unity, it is observed to be typically 0.91\pm0.01 in the parallel configuration. It indicates the sub-Poissonian process of the electron tunneling in the parallel configuration due to the relevance of the spin-dependent coherent transport in the low bias regime.
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Submitted 24 August, 2011;
originally announced August 2011.
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Anomalous Hall effect in field-effect structures of (Ga,Mn)As
Authors:
D. Chiba,
A. Werpachowska,
M. Endo,
Y. Nishitani,
F. Matsukura,
T. Dietl,
H. Ohno
Abstract:
The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated temperature dependence, including a change of sign, of the anomalous Hall conductance $σ_{xy}$ has been found in samples with the highest Curie temperatures. For more di…
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The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated temperature dependence, including a change of sign, of the anomalous Hall conductance $σ_{xy}$ has been found in samples with the highest Curie temperatures. For more disordered channels, the scaling relation between $σ_{xy}$ and $σ_{xx}$, similar to the one observed previously for thicker samples, is recovered.
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Submitted 8 January, 2011; v1 submitted 3 January, 2011;
originally announced January 2011.
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Curie temperature versus hole concentration in field-effect structures of Ga1-xMnxAs
Authors:
Y. Nishitani,
D. Chiba,
M. Endo,
M. Sawicki,
F. Matsukura,
T. Dietl,
H. Ohno
Abstract:
The Curie temperature TC is investigated as a function of the hole concentration p in thin films of ferromagnetic semiconductor (Ga,Mn)As. The magnetic properties are probed by transport measurements and p is varied by the application of an external electric field in a field-effect transistor configuration. It is found that TC is proportional to p^γ, where the exponent γ= 0.19 \pm 0.02 over a wi…
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The Curie temperature TC is investigated as a function of the hole concentration p in thin films of ferromagnetic semiconductor (Ga,Mn)As. The magnetic properties are probed by transport measurements and p is varied by the application of an external electric field in a field-effect transistor configuration. It is found that TC is proportional to p^γ, where the exponent γ= 0.19 \pm 0.02 over a wide range of Mn compositions and channel thicknesses. The magnitude of gamma is reproduced by a p-d Zener model taking into account nonuniform hole distribution along the growth direction, determined by interface states and the applied gate electric fields.
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Submitted 21 January, 2010;
originally announced January 2010.
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Experimental probing of the interplay between ferromagnetism and localisation in (Ga,Mn)As
Authors:
Maciej Sawicki,
Daichi Chiba,
Anna Korbecka,
Yu Nishitani,
Jacek A. Majewski,
Fumihiro Matsukura,
Tomasz Dietl,
Hideo Ohno
Abstract:
The question whether the Anderson-Mott localisation enhances or reduces magnetic correlations is central to the physics of magnetic alloys. Particularly intriguing is the case of (Ga,Mn)As and related magnetic semiconductors, for which diverging theoretical scenarios have been proposed. Here, by direct magnetisation measurements we demonstrate how magnetism evolves when the density of carriers m…
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The question whether the Anderson-Mott localisation enhances or reduces magnetic correlations is central to the physics of magnetic alloys. Particularly intriguing is the case of (Ga,Mn)As and related magnetic semiconductors, for which diverging theoretical scenarios have been proposed. Here, by direct magnetisation measurements we demonstrate how magnetism evolves when the density of carriers mediating the spin-spin coupling is diminished by the gate electric field in metal/insulator/semiconductor structures of (Ga,Mn)As. Our findings show that the channel depletion results in a monotonic decrease of the Curie temperature, with no evidence for the maximum expected within the impurity-band models. We find that the transition from the ferromagnetic to the paramagnetic state proceeds via the emergence of a superparamagnetic-like spin arrangement. This implies that carrier localisation leads to a phase separation into ferromagnetic and nonmagnetic regions, which we attribute to critical fluctuations in the local density of states, specific to the Anderson-Mott quantum transition.
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Submitted 21 September, 2009;
originally announced September 2009.
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Mott Relation for Anomalous Hall and Nernst effects in Ga1-xMnxAs Ferromagnetic Semiconductors
Authors:
Yong Pu,
Daichi Chiba,
Fumihiro Matsukura,
Hideo Ohno,
**g Shi
Abstract:
The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this work, we have simultaneously measured AHE and the anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films, and observed an excep…
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The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this work, we have simultaneously measured AHE and the anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films, and observed an exceptionally large ANE at zero magnetic field. We further show that AHE and ANE share a common origin and demonstrate the validity of the Mott relation for the anomalous transport phenomena.
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Submitted 12 September, 2008; v1 submitted 30 July, 2008;
originally announced July 2008.
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An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material
Authors:
C. Gould,
S. Mark,
K. Pappert,
G. Dengel,
J. Wenisch,
R. P. Campion,
A. W. Rushforth,
D. Chiba,
Z. Li,
X. Liu,
W. Van Roy,
H. Ohno,
J. K. Furdyna,
B. Gallagher,
K. Brunner,
G. Schmidt,
L. W. Molenkamp
Abstract:
This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprints to identify contributions of the various higher order anisotropy terms, we show that the presence of both a [100] and a [110] uniaxial anisotropy in addition to the primary ([100] + [010]) anisotropy is common to all…
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This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprints to identify contributions of the various higher order anisotropy terms, we show that the presence of both a [100] and a [110] uniaxial anisotropy in addition to the primary ([100] + [010]) anisotropy is common to all medium doped (Ga,Mn)As layers typically used in transport measurement, with the amplitude of these uniaxial terms being characteristic of the individual layers.
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Submitted 28 February, 2008;
originally announced February 2008.
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(In,Ga)As gated-vertical quantum dot with an Al2O3 insulator
Authors:
Tomohiro Kita,
Daichi Chiba,
Yuzo Ohno,
Hideo Ohno
Abstract:
We fabricated a gated-vertical (In,Ga)As quantum dot with an Al2O3 gate insulator deposited using atomic layer deposition and investigated its electrical transport properties at low temperatures. The gate voltage dependence of the dI/dV-V characteristics shows clear Coulomb diamonds at 1.1K. The metal-insulator gate structure allowed us to control the number of electrons in the quantum dot from…
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We fabricated a gated-vertical (In,Ga)As quantum dot with an Al2O3 gate insulator deposited using atomic layer deposition and investigated its electrical transport properties at low temperatures. The gate voltage dependence of the dI/dV-V characteristics shows clear Coulomb diamonds at 1.1K. The metal-insulator gate structure allowed us to control the number of electrons in the quantum dot from 0 to a large number estimated to be about 130.
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Submitted 3 January, 2007;
originally announced January 2007.
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Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As
Authors:
M. Yamanouchi,
D. Chiba,
F. Matsukura,
T. Dietl,
H. Ohno
Abstract:
Current-induced domain-wall motion with velocity spanning over five orders of magnitude up to 22 m/s has been observed by magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin-transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for d…
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Current-induced domain-wall motion with velocity spanning over five orders of magnitude up to 22 m/s has been observed by magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin-transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.
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Submitted 23 January, 2006;
originally announced January 2006.
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Domain-wall resistance in ferromagnetic (Ga,Mn)As
Authors:
D. Chiba,
M. Yamanouchi,
F. Matsukura,
T. Dietl,
H. Ohno
Abstract:
A series of microstructures designed to pin domain-walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributions to DW resistance. The former is explained quantitatively as resulting from a polarity change in the Hall electric field at DW. The latter is one order of magnitude greater than a term brought about by anisotropic m…
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A series of microstructures designed to pin domain-walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributions to DW resistance. The former is explained quantitatively as resulting from a polarity change in the Hall electric field at DW. The latter is one order of magnitude greater than a term brought about by anisotropic magnetoresistance and is shown to be consistent with disorder-induced misstracing of the carrier spins subject to spatially varying magnetization.
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Submitted 20 January, 2006;
originally announced January 2006.
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Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction
Authors:
D. Chiba,
Y. Sato,
T. Kita,
F. Matsukura,
H. Ohno
Abstract:
Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular 1.5 x 0.3 um^2 device revealed that magnetization switching occurs at low critical current densities of 1.1 - 2.2 x 10^5 A/cm^2 despite the presence of spin-o…
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Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular 1.5 x 0.3 um^2 device revealed that magnetization switching occurs at low critical current densities of 1.1 - 2.2 x 10^5 A/cm^2 despite the presence of spin-orbit interaction in the p-type semiconductor system. Possible mechanisms responsible for the effect are discussed.
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Submitted 22 November, 2004; v1 submitted 19 March, 2004;
originally announced March 2004.
