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In-situ Plasma Studies using a Direct Current Microplasma in a Scanning Electron Microscope
Authors:
Lukas Grünewald,
Dmitry Chezganov,
Robin De Meyer,
Andrey Orekhov,
Sandra Van Aert,
Annemie Bogaerts,
Sara Bals,
Jo Verbeeck
Abstract:
Microplasmas can be used for a wide range of technological applications and to improve our understanding of fundamental physics. Scanning electron microscopy, on the other hand, provides insights into the sample morphology and chemistry of materials from the mm-down to the nm-scale. Combining both would provide direct insight into plasma-sample interactions in real-time and at high spatial resolut…
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Microplasmas can be used for a wide range of technological applications and to improve our understanding of fundamental physics. Scanning electron microscopy, on the other hand, provides insights into the sample morphology and chemistry of materials from the mm-down to the nm-scale. Combining both would provide direct insight into plasma-sample interactions in real-time and at high spatial resolution. Up till now, very few attempts in this direction have been made, and significant challenges remain. This work presents a stable direct current glow discharge microplasma setup built inside a scanning electron microscope. The experimental setup is capable of real-time in-situ imaging of the sample evolution during plasma operation and it demonstrates localized sputtering and sample oxidation. Further, the experimental parameters such as varying gas mixtures, electrode polarity, and field strength are explored and experimental $V$-$I$ curves under various conditions are provided. These results demonstrate the capabilities of this setup in potential investigations of plasma physics, plasma-surface interactions, and materials science and its practical applications. The presented setup shows the potential to have several technological applications, e.g., to locally modify the sample surface (e.g., local oxidation and ion implantation for nanotechnology applications) on the $μ$m-scale.
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Submitted 29 August, 2023;
originally announced August 2023.
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Induced Giant Piezoelectricity in Centrosymmetric Oxides
Authors:
D. -S. Park,
M. Hadad,
L. M. Rimer,
R. Ignatans,
D. Spirito,
V. Esposito,
V. Tileli,
N. Gauquelin,
D. Chezganov,
D. Jannis J. Verbeeck,
S. Gorfman,
N. Pryds,
P. Muralt,
D. Damjanovic
Abstract:
Piezoelectrics are materials that linearly deform in response to an applied electric field. As a fundamental prerequisite, piezoelectric material must possess a non centrosymmetric crystal structure. For more than a century, this remains the major obstacle for finding new piezoelectric materials. We circumvent this limitation by breaking the crystallographic symmetry, and inducing large and sustai…
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Piezoelectrics are materials that linearly deform in response to an applied electric field. As a fundamental prerequisite, piezoelectric material must possess a non centrosymmetric crystal structure. For more than a century, this remains the major obstacle for finding new piezoelectric materials. We circumvent this limitation by breaking the crystallographic symmetry, and inducing large and sustainable piezoelectric effects in centrosymmetric materials by electric field induced rearrangement of oxygen vacancies Surprisingly, the results show the generation of extraordinarily large piezoelectric responses d33 ~200,000 pm/V), in cubic fluorite Gd-doped CeO2-x films, which is two orders of magnitude larger than in the presently best known lead based piezoelectric relaxor ferroelectric oxide. These findings open opportunities to design new piezoelectric materials from environmentally friendly centrosymmetric ones.
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Submitted 10 February, 2022; v1 submitted 1 November, 2021;
originally announced November 2021.
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Polarization-dependent conductivity of grain boundaries in BiFeO3 thin films
Authors:
Denis Alikin,
Yevhen Fomichov,
Saulo Portes Reis,
Alexander Abramov,
Dmitry Chezganov,
Vladimir Shur,
Eugene Eliseev,
Anna Morozovska,
Eudes Araujo,
Andrei Kholkin
Abstract:
Charge transport across the interfaces in complex oxides attracts a lot of attention because it allows creating novel functionalities useful for device applications. In particular, it has been observed that movable domain walls in epitaxial BiFeO3 films possess enhanced conductivity that can be used for read out in ferroelectric-based memories. In this work, the relation between the polarization a…
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Charge transport across the interfaces in complex oxides attracts a lot of attention because it allows creating novel functionalities useful for device applications. In particular, it has been observed that movable domain walls in epitaxial BiFeO3 films possess enhanced conductivity that can be used for read out in ferroelectric-based memories. In this work, the relation between the polarization and conductivity in sol-gel BiFeO3 films with special emphasis on grain boundaries as natural interfaces in polycrystalline ferroelectrics is investigated. The grains exhibit self-organized domain structure in these films, so that the "domain clusters" consisting of several grains with aligned polarization directions are formed. Surprisingly, grain boundaries between these clusters (with antiparallel polarization direction) have significantly higher electrical conductivity in comparison to "inter-cluster" grain boundaries, in which the conductivity was even smaller than in the bulk. As such, polarization-dependent conductivity of the grain boundaries was observed for the first time in ferroelectric thin films. The results are rationalized by thermodynamic modelling combined with finite element simulations of the charge and stress accumulation at the grain boundaries giving major contribution to conductivity. The observed polarization-dependent conductivity of grain boundaries in ferroelectrics opens up a new avenue for exploiting these materials in electronic devices.
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Submitted 19 June, 2019;
originally announced June 2019.
