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Gate voltage induced injection and shift currents in AA- and AB-stacked bilayer graphene
Authors:
Ze Zheng,
Kainan Chang,
** Luo Cheng
Abstract:
Generating photogalvanic effects in centrosymmetric materials can provide new opportunities for develo** passive photodetectors and energy harvesting devices. In this work, we investigate the photogalvanic effects in centrosymmetric two-dimensional materials, AA- and AB-stacked bilayer graphene, by applying an external gate voltage to break the symmetry. Using a tight-binding model to describe t…
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Generating photogalvanic effects in centrosymmetric materials can provide new opportunities for develo** passive photodetectors and energy harvesting devices. In this work, we investigate the photogalvanic effects in centrosymmetric two-dimensional materials, AA- and AB-stacked bilayer graphene, by applying an external gate voltage to break the symmetry. Using a tight-binding model to describe the electronic states, the injection coefficients for circular photogalvanic effects and shift conductivities for linear photogalvanic effects are calculated for both materials with light wavelengths ranging from THz to visible. We find that gate voltage induced photogalvanic effects can be very significant for AB-stacked bilayer graphene, with generating a maximal dc current in the order of mA for a 1 $μ$m wide sample illuminated by a light intensity of 0.1 GW/cm$^2$, which is determined by the optical transition around the band gap and van Hove singularity points. Although such effects in AA-stacked bilayer graphene are about two orders of magnitude smaller than those in AB-stacked bilayer graphene, the spectrum is interestingly limited in a very narrow photon energy window, which is associated with the interlayer coupling strength. A detailed analysis of the light polarization dependence is also performed. The gate voltage and chemical potential can be used to effectively control the photogalvanic effects.
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Submitted 11 July, 2023;
originally announced July 2023.
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Theory of Optical Activity in Doped Systems with Application to Twisted Bilayer Graphene
Authors:
K. Chang,
Z. Zheng,
J. E. Sipe,
J. L. Cheng
Abstract:
We theoretically study the optical activity in a doped system and derive the optical activity tensor from a light wavevector-dependent linear optical conductivity. Although the light-matter interaction is introduced through the velocity gauge from a minimal coupling Hamiltonian, we find that the well-known ``false divergences'' problem can be avoided in practice if the electronic states are descri…
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We theoretically study the optical activity in a doped system and derive the optical activity tensor from a light wavevector-dependent linear optical conductivity. Although the light-matter interaction is introduced through the velocity gauge from a minimal coupling Hamiltonian, we find that the well-known ``false divergences'' problem can be avoided in practice if the electronic states are described by a finite band effective Hamiltonian, such as a few-band tight-binding model. The expression we obtain for the optical activity tensor is in good numerical agreement with a recent theory derived for an undoped topologically trivial gapped system. We apply our theory to the optical activity of a gated twisted bilayer graphene, with a detailed discussion of the dependence of the results on twist angle, chemical potential, gate voltage, and location of rotation center forming the twisted bilayer graphene.
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Submitted 8 October, 2022;
originally announced October 2022.
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Optical Coherent Injection of Carrier and Current in Twisted Bilayer graphene
Authors:
Ze Zheng,
Ying Song,
Yu Wei Shan,
Wei Xin,
** Luo Cheng
Abstract:
We theoretically investigate optical injection processes, including one- and two-photon carrier injection and two-color coherent current injection, in twisted bilayer graphene with moderate angles. The electronic states are described by a continuum model, and the spectra of injection coefficients are numerically calculated for different chemical potentials and twist angles, where the transitions b…
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We theoretically investigate optical injection processes, including one- and two-photon carrier injection and two-color coherent current injection, in twisted bilayer graphene with moderate angles. The electronic states are described by a continuum model, and the spectra of injection coefficients are numerically calculated for different chemical potentials and twist angles, where the transitions between different bands are understood by the electron energy resolved injection coefficients. The comparison with the injection in monolayer graphene shows the significance of the interlayer coupling in the injection processes. For undoped twisted bilayer graphene, all spectra of injection coefficients can be divided into three energy regimes, which vary with the twist angle. For very low photon energies in the linear dispersion regime, the injection is similar to graphene with a renormalized Fermi velocity determined by the twist angle; for very high photon energies where the interlayer coupling is negligible, the injection is the same as that of graphene; and in the middle regime around the transition energy of the Van Hove singularity, the injection shows fruitful fine structures. Furthermore, the two-photon carrier injection diverges for the photon energy in the middle regime due to the existence of double resonant transitions.
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Submitted 17 November, 2021;
originally announced November 2021.
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Electric field induced injection and shift currents in zigzag graphene nanoribbons
Authors:
Yadong Wei,
Weiqi Li,
Yongyuan Jiang,
**luo Cheng
Abstract:
We theoretically investigate the one-color injection currents and shift currents in zigzag graphene nanoribbons with applying a static electric field across the ribbon, which breaks the inversion symmetry to generate nonzero second order optical responses by dipole interaction. These two types of currents can be separately excited by specific light polarization, circularly polarized lights for inj…
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We theoretically investigate the one-color injection currents and shift currents in zigzag graphene nanoribbons with applying a static electric field across the ribbon, which breaks the inversion symmetry to generate nonzero second order optical responses by dipole interaction. These two types of currents can be separately excited by specific light polarization, circularly polarized lights for injection currents and linearly polarized lights for shift currents. Based on a tight binding model formed by carbon 2p$_z$ orbitals, we numerically calculate the spectra of injection coefficients and shift conductivities, as well as their dependence on the static field strength and ribbon width. The spectra show many peaks associated with the optical transition between different subbands, and the positions and amplitudes of these peaks can be effectively controlled by the static electric field. By constructing a simple two band model, the static electric fields are found to modify the edge states in a nonperturbative way, and their associated optical transitions dominate the current generation at low photon energies. For typical parameters, such as a static field 10$^6$ V/m and light intensity 0.1 GW/cm$^2$, the magnitude of the injection and shift currents for a ribbon with width 5 nm can be as large as the order of 1 $μ$A. Our results provide a physical basis for realizing passive optoelectronic devices based on graphene nanoribbons.
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Submitted 9 June, 2021;
originally announced June 2021.
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Third order optical nonlinearity of three dimensional massless Dirac fermions
Authors:
J. L. Cheng,
J. E. Sipe,
S. W. Wu
Abstract:
We present analytic expressions for the electronic contributions to the linear conductivity $σ^{(1)}_{3d}(ω)$ and the third order optical conductivity $σ^{(3)}_{3d}(ω_1,ω_2,ω_3)$ of three dimensional massless Dirac fermions, the quasi-particles relevant for the low energy excitation of topological Dirac semimetals and Weyl semimetals. Although there is no gap for massless Dirac fermions, a finite…
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We present analytic expressions for the electronic contributions to the linear conductivity $σ^{(1)}_{3d}(ω)$ and the third order optical conductivity $σ^{(3)}_{3d}(ω_1,ω_2,ω_3)$ of three dimensional massless Dirac fermions, the quasi-particles relevant for the low energy excitation of topological Dirac semimetals and Weyl semimetals. Although there is no gap for massless Dirac fermions, a finite chemical potential $μ$ can lead to an effective gap parameter, which plays an important role in the qualitative features of interband optical transitions. For gapless linear dispersion in three dimension, the imaginary part of the linear conductivity diverges as a logarithmic function of the cutoff energy, while the real part is linear with photon frequency $ω$ as $\hbarω>2|μ|$. The third order conductivity exhibits features very similar to those of two dimensional Dirac fermions, i.e., graphene, but with the amplitude for a single Dirac cone generally two orders of magnitude smaller in three dimension than in two dimension. There are many resonances associated with the chemical potential induced gap parameters, and divergences associated with the intraband transitions. The details of the third order conductivity are discussed for third harmonic generation, the Kerr effect and two-photon carrier injection, parametric frequency conversion, and two-color coherent current injection. Although the expressions we derive are limited to the clean limit at zero temperature, the generalization to include phenomenological relaxation processes at finite temperature is straightforward and is presented.
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Submitted 27 May, 2020;
originally announced May 2020.
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Third harmonic generation of undoped graphene in Hartree-Fock approximation
Authors:
J. L. Cheng,
J. E. Sipe,
Chunlei Guo
Abstract:
We theoretically investigate the effects of Coulomb interaction, at the level of unscreened Hartree-Fock approximation, on third harmonic generation of undoped graphene in an equation of motion framework. The unperturbed electronic states are described by a widely used two-band tight binding model, and the Coulomb interaction is described by the Ohno potential. The ground state is renormalized by…
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We theoretically investigate the effects of Coulomb interaction, at the level of unscreened Hartree-Fock approximation, on third harmonic generation of undoped graphene in an equation of motion framework. The unperturbed electronic states are described by a widely used two-band tight binding model, and the Coulomb interaction is described by the Ohno potential. The ground state is renormalized by taking into account the Hartree-Fock term, and the optical conductivities are obtained by numerically solving the equations of motion. The absolute values of conductivity for third harmonic generation depend on the photon frequency $Ω$ as $Ω^{-n}$ for $\hbarΩ<1$, and then show a peak as $3\hbarΩ$ approaches the renormalized energy of the $M$ point. Taking into account the Coulomb interaction, $n$ is found to be $5.5$, which is significantly greater than the value of $4$ found with the neglect of the Coulomb interaction. Therefore the Coulomb interaction enhances third harmonic generation at low photon energies -- for our parameters $\hbarΩ<0.8$~eV -- and then reduces it until the photon energy reaches about $2.1$~eV. The effect of the background dielectric constant is also considered.
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Submitted 11 October, 2019;
originally announced October 2019.
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Intraband divergences in third order optical response of 2D systems
Authors:
J. L. Cheng,
J. E. Sipe,
S. W. Wu,
Chunlei Guo
Abstract:
The existence of large nonlinear optical coefficients is one of the preconditions for using nonlinear optical materials in nonlinear optical devices. For a crystal, such large coefficients can be achieved by matching photon energies with resonant energies between different bands, and so the details of the crystal band structure play an important role. Here we demonstrate that large third-order non…
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The existence of large nonlinear optical coefficients is one of the preconditions for using nonlinear optical materials in nonlinear optical devices. For a crystal, such large coefficients can be achieved by matching photon energies with resonant energies between different bands, and so the details of the crystal band structure play an important role. Here we demonstrate that large third-order nonlinearities can also be generally obtained by a different strategy: As any of the incident frequencies or the sum of any two or three frequencies approaches zero, the doped or excited populations of electronic states lead to divergent contributions in the induced current density. We refer to these as intraband divergences, by analogy with the behavior of Drude conductivity in linear response. Physically, such resonant processes can be associated with a combination of inraband and interband optical transitions. Current-induced second order nonlinearity, coherent current injection, and jerk currents are all related to such divergences, and we find similar divergences in degenerate four wave mixing and cross-phase modulation under certain conditions. These divergences are limited by intraband relaxation parameters, and lead to a large optical response from a high quality sample; we find they are very robust with respect to variations in the details of the band structure. To clearly track all of these effects, we analyze gapped graphene, describing the electrons as massive Dirac fermions; under the relaxation time approximation, we derive analytic expressions for the third order conductivities, and identify the divergences that arise in describing the associated nonlinear phenomena.
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Submitted 23 December, 2018; v1 submitted 25 August, 2018;
originally announced August 2018.
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Nonlinear optics of graphene and other 2D materials in layered structures
Authors:
J. L. Cheng,
J. E. Sipe,
N. Vermeulen,
C. Guo
Abstract:
We present a theoretical framework for nonlinear optics of graphene and other 2D materials in layered structures. We derive a key equation to find the effective electric field and the sheet current density in the 2D material for given incident light beams. Our approach takes into account the effect of the surrounding environment and characterizes its contribution as a structure factor. We apply ou…
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We present a theoretical framework for nonlinear optics of graphene and other 2D materials in layered structures. We derive a key equation to find the effective electric field and the sheet current density in the 2D material for given incident light beams. Our approach takes into account the effect of the surrounding environment and characterizes its contribution as a structure factor. We apply our approach to two experimental setups, and discuss the structure factors for several nonlinear optical processes including second harmonic generation, third harmonic generation, and parametric frequency conversion. Our systematic study gives a strict extraction method for the nonlinear coefficients, and provides new insights in how layered structures influence the nonlinear signal observed from 2D materials.
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Submitted 8 August, 2018;
originally announced August 2018.
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Nonperturbative model for optical response under intense periodic fields with application to graphene in a strong perpendicular magnetic field
Authors:
J. L. Cheng,
C. Guo
Abstract:
Graphene exhibits extremely strong optical nonlinearity when a strong perpendicular magnetic field is applied, the response current shows strong field dependence even for moderate light intensity, and the perturbation theory fails. We nonperturbatively calculate full optical conductivities induced by a periodic field in an equation-of-motion framework based on the Floquet theorem, with the scatter…
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Graphene exhibits extremely strong optical nonlinearity when a strong perpendicular magnetic field is applied, the response current shows strong field dependence even for moderate light intensity, and the perturbation theory fails. We nonperturbatively calculate full optical conductivities induced by a periodic field in an equation-of-motion framework based on the Floquet theorem, with the scattering described phenomenologically. The nonlinear response at high fields is understood in terms of the dressed electronic states, or Floquet states, which is further characterized by the optical conductivity for a weak probe light field. This approach is illustrated for a magnetic field at $5$ T and a driving field with photon energy $0.05$ eV. Our results show that the perturbation theory works only for weak fields $<3$ kV/cm, confirming the extremely strong light matter interaction for Landau levels of graphene. This approach can be easily extended to the calculation of optical conductivities in other systems.
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Submitted 2 March, 2018; v1 submitted 26 December, 2017;
originally announced December 2017.
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Nonlinear magneto-optic effects in doped graphene and gapped graphene: a perturbative treatment
Authors:
J. L. Cheng,
C. Guo
Abstract:
The nonlinear magneto-optic responses are investigated for gapped graphene and doped graphene in a perpendicular magnetic field. The electronic states are described by Landau levels, and the electron dynamics in an optical field is obtained by solving the density matrix in the equation of motion. In the linear dispersion approximation around the Dirac points, both linear conductivity and third ord…
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The nonlinear magneto-optic responses are investigated for gapped graphene and doped graphene in a perpendicular magnetic field. The electronic states are described by Landau levels, and the electron dynamics in an optical field is obtained by solving the density matrix in the equation of motion. In the linear dispersion approximation around the Dirac points, both linear conductivity and third order nonlinear conductivities are numerically evaluated for infrared frequencies. The nonlinear phenomena, including third harmonic generation, Kerr effects and two photon absorption, and four wave mixing, are studied. All optical conductivities show strong dependence on the magnetic field. At weak magnetic fields, our results for doped graphene agree with those in the literature. We also present the spectra of the conductivities of gapped graphene. At strong magnetic fields, the third order conductivities show peaks with varying the magnetic field and the photon energy. These peaks are induced by the resonant transitions between different Landau levels. The resonant channels, the positions, and the divergences of peaks are analyzed. The conductivities can be greatly modified, up to orders of magnitude. The dependence of the conductivities on the gap parameter and the chemical potential is studied.
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Submitted 2 March, 2018; v1 submitted 12 November, 2017;
originally announced November 2017.
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Coherent control of current injection in zigzag graphene nanoribbons
Authors:
Cuauhtémoc Salazar,
J. L. Cheng,
J. E. Sipe
Abstract:
We present Fermi's golden rule calculations of the optical carrier injection and the coherent control of current injection in graphene nanoribbons with zigzag geometry, using an envelope function approach. This system possesses strongly localized states (flat bands) with a large joint density of states at low photon energies; for ribbons with widths above a few tens of nanometers, this system also…
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We present Fermi's golden rule calculations of the optical carrier injection and the coherent control of current injection in graphene nanoribbons with zigzag geometry, using an envelope function approach. This system possesses strongly localized states (flat bands) with a large joint density of states at low photon energies; for ribbons with widths above a few tens of nanometers, this system also posses large number of (non-flat) states with maxima and minima close to the Fermi level. Consequently, even with small do**s the occupation of these localized states can be significantly altered. In this work, we calculate the relevant quantities for coherent control at different chemical potentials, showing the sensitivity of this system to the occupation of the edge states. We consider coherent control scenarios arising from the interference of one-photon absorption at $2\hbarω$ with two-photon absorption at $\hbarω$, and those arising from the interference of one-photon absorption at $\hbarω$ with stimulated electronic Raman scattering (virtual absorption at $2\hbarω$ followed by emission at $\hbarω$). Although at large photon energies these processes follow an energy-dependence similar to that of 2D graphene, the zigzag nanoribbons exhibit a richer structure at low photon energies, arising from divergences of the joint density of states and from resonant absorption processes, which can be strongly modified by do**. As a figure of merit for the injected carrier currents, we calculate the resulting swarm velocities. Finally, we provide estimates for the limits of validity of our model.
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Submitted 27 September, 2017; v1 submitted 7 June, 2017;
originally announced June 2017.
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Second order optical nonlinearity of graphene due to electric quadrupole and magnetic dipole effects
Authors:
J. L. Cheng,
N. Vermeulen,
J. E. Sipe
Abstract:
We present a practical scheme to separate the contributions of the electric quadrupole-like and the magnetic dipole-like effects to the forbidden second order optical nonlinear response of graphene, and give analytic expressions for the second order op- tical conductivities, calculated from the independent particle approximation, with relaxation described in a phenomenological way. We predict stro…
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We present a practical scheme to separate the contributions of the electric quadrupole-like and the magnetic dipole-like effects to the forbidden second order optical nonlinear response of graphene, and give analytic expressions for the second order op- tical conductivities, calculated from the independent particle approximation, with relaxation described in a phenomenological way. We predict strong second order nonlinear effects, including second harmonic generation, photon drag, and difference fre- quency generation. We discuss in detail the controllability of these effects by tuning the chemical potential, taking advantage of the dominant role played by interband optical transitions in the response.
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Submitted 7 March, 2017; v1 submitted 20 September, 2016;
originally announced September 2016.
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Numerical study of the optical nonlinearity of doped and gapped graphene: From weak to strong field excitation
Authors:
J. L. Cheng,
N. Vermeulen,
J. E. Sipe
Abstract:
Numerically solving the semiconductor Bloch equations within a phenomenological relaxation time approximation, we extract both the linear and nonlinear optical conductivities of doped graphene and gapped graphene under excitation by a laser pulse. We discuss in detail the dependence of second harmonic generation, third harmonic generation, and the Kerr effects on the do** level, the gap, and the…
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Numerically solving the semiconductor Bloch equations within a phenomenological relaxation time approximation, we extract both the linear and nonlinear optical conductivities of doped graphene and gapped graphene under excitation by a laser pulse. We discuss in detail the dependence of second harmonic generation, third harmonic generation, and the Kerr effects on the do** level, the gap, and the electric field amplitude. The numerical results for weak electric fields agree with those calculated from available analytic perturbation formulas. For strong electric fields when saturation effects are important, all the effective third order nonlinear response coefficients show a strong field dependence.
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Submitted 3 September, 2015;
originally announced September 2015.
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Third order nonlinearity of graphene: effects of phenomenological relaxation and finite temperature
Authors:
J. L. Cheng,
N. Vermeulen,
J. E. Sipe
Abstract:
We investigate the effect of phenomenological relaxation parameters on the third order optical nonlinearity of doped graphene by perturbatively solving the semiconductor Bloch equation around the Dirac points. An analytic expression for the nonlinear conductivity at zero temperature is obtained under the linear dispersion approximation. With this analytic formula as starting point, we construct th…
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We investigate the effect of phenomenological relaxation parameters on the third order optical nonlinearity of doped graphene by perturbatively solving the semiconductor Bloch equation around the Dirac points. An analytic expression for the nonlinear conductivity at zero temperature is obtained under the linear dispersion approximation. With this analytic formula as starting point, we construct the conductivity at finite temperature and study the optical response to a laser pulse of finite duration. We illustrate the dependence of several nonlinear optical effects, such as third harmonic generation, Kerr effects and two photon absorption, parametric frequency conversion, and two color coherent current injection, on the relaxation parameters, temperature, and pulse duration. In the special case where one of the electric fields is taken as a dc field, we investigate the dc-current and dc-field induced second order nonlinearities, including dc-current induced second harmonic generation and difference frequency generation.
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Submitted 23 December, 2015; v1 submitted 25 March, 2015;
originally announced March 2015.
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Disorder-induced significant enhancement in magnetization of ball-milled Fe2CrGa alloy
Authors:
H. G. Zhang,
C. Z. Zhang,
W. Zhu,
E. K. Liu,
W. H. Wang,
H. W. Zhang,
J. L. Cheng,
H. Z. Luo,
G. H. Wu
Abstract:
A new disordered atom configuration in Fe2CrGa alloy has been created by ball-milling method. This leads to a significant enhancement of the magnetic moment up to 3.2~3.9 μB and an increase of Curie temperature by about 200 K, compared with the arc-melt samples. Combination of first-principles calculations and experimental results reveals that Fe2CrGa alloy should crystallize in Hg2CuTi based stru…
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A new disordered atom configuration in Fe2CrGa alloy has been created by ball-milling method. This leads to a significant enhancement of the magnetic moment up to 3.2~3.9 μB and an increase of Curie temperature by about 200 K, compared with the arc-melt samples. Combination of first-principles calculations and experimental results reveals that Fe2CrGa alloy should crystallize in Hg2CuTi based structure with different atomic disorders for the samples prepared by different methods. It is addressed that magnetic interactions play a crucial role for the system to adopt such an atomic configuration which disobeys the empirical rule.
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Submitted 20 March, 2013;
originally announced March 2013.
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Spin-dependent inter- and intra-valley electron-phonon scattering in germanium
Authors:
Z. Liu,
M. O. Nestoklon,
J. L. Cheng,
E. L. Ivchenko,
M. W. Wu
Abstract:
We investigate the spin-dependent electron-phonon scatterings of the $L$ and $Γ$ valleys and the band structure near the conduction band minima in germanium. We first construct a $16\times16$ ${\bm k}\cdot{\bm p}$ Hamiltonian in the vicinity of the $L$ point in germanium, which ensures the correctness of the band structure of the lowest three conduction bands and highest two valence bands. This Ha…
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We investigate the spin-dependent electron-phonon scatterings of the $L$ and $Γ$ valleys and the band structure near the conduction band minima in germanium. We first construct a $16\times16$ ${\bm k}\cdot{\bm p}$ Hamiltonian in the vicinity of the $L$ point in germanium, which ensures the correctness of the band structure of the lowest three conduction bands and highest two valence bands. This Hamiltonian facilitates the analysis of the spin-related properties of the conduction electrons. We then demonstrate the phonon-induced electron scatterings of the $L$ and $Γ$ valleys, i.e., the intra-$Γ$/ $L$ valley, inter--$Γ$-$L$ valley and inter--$L$-$L$ valley scatterings in germanium. The selection rules and complete scattering matrices for these scatterings are calculated, where the scattering matrices for the intra-$Γ$ valley scattering, inter--$Γ$-$L$ valley scattering and the optical-phonon and the separated transverse-acoustic- and longitudinal-acoustic-phonon contributions to the intra-$Γ$ valley scattering have not been reported in the literature. The coefficients in these scattering matrices are obtained via the pseudo-potential calculation, which also verifies our selection rules and wave-vector dependence. We further discuss the Elliott-Yafet mechanisms in these electron-phonon scatterings with the ${\bm k}$$\cdot$${\bm p}$ eigenstates at the $L$ and $Γ$ valleys. Our investigation of these electron-phonon scatterings are essential for the study of the optical orientation of spin and hot-electron relaxation in germanium.
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Submitted 16 May, 2013; v1 submitted 15 December, 2012;
originally announced December 2012.
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Two-photon Indirect Optical Injection and Two-color Coherent Control in Bulk Silicon
Authors:
J. L. Cheng,
J. Rioux,
J. E. Sipe
Abstract:
Using an empirical pseudopotential description of electron states and an adiabatic bond charge model for phonon states in bulk silicon, we theoretically investigate two-photon indirect optical injection of carriers and spins and two-color coherent control of the motion of the injected carriers and spins. For two-photon indirect carrier and spin injection, we identify the selection rules of band ed…
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Using an empirical pseudopotential description of electron states and an adiabatic bond charge model for phonon states in bulk silicon, we theoretically investigate two-photon indirect optical injection of carriers and spins and two-color coherent control of the motion of the injected carriers and spins. For two-photon indirect carrier and spin injection, we identify the selection rules of band edge transitions, the injection in each conduction band valley, and the injection from each phonon branch at 4 K and 300 K. At 4 K, the TA phonon-assisted transitions dominate the injection at low photon energies, and the TO phonon-assisted at high photon energies. At 300 K, the former dominates at all photon energies of interest. The carrier injection shows anisotropy and linear-circular dichroism with respect to light propagation direction. For light propagating along the $<001>$ direction, the carrier injection exhibits valley anisotropy, and the injection into the $Z$ conduction band valley is larger than that into the $X/Y$ valleys. For $σ^-$ light propagating along the $<001>$ ($<111>$) direction, the degree of spin polarization gives a maximum value about 20% (6%) at 4 K and -10% (20%) at 300 K, and at both temperature shows abundant structure near the injection edges due to contributions from different phonon branches. Forthe two-color coherent current injection with an incident optical field composed of a fundamental frequency and its second harmonic, the response tensors of the electron (hole) charge and spin currents are calculated at 4 K and 300 K. We show the current control for three different polarization scenarios. The spectral dependence of the maximum swarm velocity shows that the direction of charge current reverses under increase in photon energy.
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Submitted 11 November, 2011; v1 submitted 15 August, 2011;
originally announced August 2011.
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Full Band Structure Calculation of Two-photon Indirect Absorption in Bulk Silicon
Authors:
J. L. Cheng,
J. Rioux,
J. E. Sipe
Abstract:
Degenerate two-photon indirect absorption in silicon is an important limiting effect on the use of silicon structures for all-optical information processing at telecommunication wavelengths. We perform a full band structure calculation to investigate two-photon indirect absorption in bulk silicon, using a pseudopotential description of the energy bands and an adiabatic bond charge model to describ…
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Degenerate two-photon indirect absorption in silicon is an important limiting effect on the use of silicon structures for all-optical information processing at telecommunication wavelengths. We perform a full band structure calculation to investigate two-photon indirect absorption in bulk silicon, using a pseudopotential description of the energy bands and an adiabatic bond charge model to describe phonon dispersion and polarization. Our results agree well with some recent experimental results. The transverse acoustic/optical phonon-assisted processes dominate.
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Submitted 16 February, 2011; v1 submitted 25 November, 2010;
originally announced November 2010.
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Theory of optical spin orientation in silicon
Authors:
J. L. Cheng,
J. Rioux,
J. Fabian,
J. E. Sipe
Abstract:
We theoretically investigate the indirect optical injection of carriers and spins in bulk silicon, using an empirical pseudopotential description of electron states and an adiabatic bond charge model for phonon states. We identify the selection rules, the contribution to the carrier and spin injection in each conduction band valley from each phonon branch and each valence band, and the temperature…
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We theoretically investigate the indirect optical injection of carriers and spins in bulk silicon, using an empirical pseudopotential description of electron states and an adiabatic bond charge model for phonon states. We identify the selection rules, the contribution to the carrier and spin injection in each conduction band valley from each phonon branch and each valence band, and the temperature dependence of these processes. The transition from the heavy hole band to the lowest conduction band dominates the injection due to the large joint density of states. For incident light propagating along the $[00\bar{1}]$ direction, the injection rates and the degree of spin polarization of injected electrons show strong valley anisotropy. The maximum degree of spin polarization is at the injection edge with values 25% at low temperature and 15% at high temperature.
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Submitted 16 February, 2011; v1 submitted 9 November, 2010;
originally announced November 2010.
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Spin relaxation in $n$-type ZnO quantum wells
Authors:
C. Lü,
J. L. Cheng
Abstract:
We perform an investigation on the spin relaxation for $n$-type ZnO (0001) quantum wells by numerically solving the kinetic spin Bloch equations with all the relevant scattering explicitly included. We show the temperature and electron density dependence of the spin relaxation time under various conditions such as impurity density, well width, and external electric field. We find a peak in the t…
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We perform an investigation on the spin relaxation for $n$-type ZnO (0001) quantum wells by numerically solving the kinetic spin Bloch equations with all the relevant scattering explicitly included. We show the temperature and electron density dependence of the spin relaxation time under various conditions such as impurity density, well width, and external electric field. We find a peak in the temperature dependence of the spin relaxation time at low impurity density. This peak can survive even at 100 K, much higher than the prediction and measurement value in GaAs. There also exhibits a peak in the electron density dependence at low temperature. These two peaks originate from the nonmonotonic temperature and electron density dependence of the Coulomb scattering. The spin relaxation time can reach the order of nanosecond at low temperature and high impurity density.
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Submitted 14 September, 2009; v1 submitted 5 August, 2009;
originally announced August 2009.
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Theory of the spin relaxation of conduction electrons in silicon
Authors:
J. L. Cheng,
M. W. Wu,
J. Fabian
Abstract:
A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120…
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A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 K. The calculated spin relaxation times $T_1$ agree with the spin resonance and spin injection data, following a $T^{-3}$ temperature dependence. The valley anisotropy of $T_1$ and the spin relaxation rates for hot electrons are predicted.
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Submitted 20 November, 2009; v1 submitted 22 June, 2009;
originally announced June 2009.
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Kinetic investigation on extrinsic spin Hall effect induced by skew scattering
Authors:
J. L. Cheng,
M. W. Wu
Abstract:
The kinetics of the extrinsic spin Hall conductivity induced by the skew scattering is performed from the fully microscopic kinetic spin Bloch equation approach in $(001)$ GaAs symmetric quantum well. In the steady state, the extrinsic spin Hall current/conductivity vanishes for the linear-$\mathbf k$ dependent spin-orbit coupling and is very small for the cubic-$\mathbf k$ dependent spin-orbit…
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The kinetics of the extrinsic spin Hall conductivity induced by the skew scattering is performed from the fully microscopic kinetic spin Bloch equation approach in $(001)$ GaAs symmetric quantum well. In the steady state, the extrinsic spin Hall current/conductivity vanishes for the linear-$\mathbf k$ dependent spin-orbit coupling and is very small for the cubic-$\mathbf k$ dependent spin-orbit coupling. The spin precession induced by the Dresselhaus/Rashba spin-orbit coupling plays a very important role in the vanishment of the extrinsic spin Hall conductivity in the steady state. An in-plane spin polarization is induced by the skew scattering, with the help of the spin-orbit coupling. This spin polarization is very different from the current-induced spin polarization.
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Submitted 10 January, 2008; v1 submitted 3 June, 2007;
originally announced June 2007.
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Anisotropic spin transport in GaAs quantum wells in the presence of competing Dresselhaus and Rashba spin-orbit-coupling strengths
Authors:
J. L. Cheng,
M. W. Wu,
I. C. da Cunha Lima
Abstract:
Aiming at the optimization of the spin diffusion length in (001) GaAs quantum wells, we explore the effect of the anisotropy of the spin-orbit coupling on the competition between the Rashba and the Dresselhaus spin-orbit couplings by solving the kinetic spin Bloch equations with the electron-phonon and the electron-electron scattering explicitly included. For identical strengths of the Rashba an…
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Aiming at the optimization of the spin diffusion length in (001) GaAs quantum wells, we explore the effect of the anisotropy of the spin-orbit coupling on the competition between the Rashba and the Dresselhaus spin-orbit couplings by solving the kinetic spin Bloch equations with the electron-phonon and the electron-electron scattering explicitly included. For identical strengths of the Rashba and the Dresselhaus spin-orbit couplings, the spin diffusion length shows strong anisotropy not only for the spin polarization direction but also for the spin diffusion direction. Two special directions are used seeking for the large diffusion length: ($\bar{1}$10) and (110). Without the cubic term of the Dresselhaus spin-orbit coupling and with the identical Dresselhaus and Rashba strengths, infinite diffusion lengths can be obtained {\em either} for the spin diffusion/injection direction along $(\bar110)$, regardless of the direction of spin polarization, {\em or} for the spin polarization along $(110)$, regardless of the direction of the spin diffusion/injection.
However, the cubic Dresselhaus term cannot be neglected, resulting into a finite spin diffusion length which decreases with the temperature and the electron density, and of which the anisotropy for the spin diffusion direction and spin polarization direction is maintained. For the spin diffusion/injection direction along ($\bar{1}$10), the spin diffusion length increases first with the increase of the Rashba strength (from 0) which can be tuned by the external gate voltage; when the Rashba strength is slightly smaller than (in stead of equal to) the Dresselhaus strength, the diffusion length reaches its maximum; and then it decreases with the Rashba strength.
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Submitted 2 April, 2007; v1 submitted 30 January, 2007;
originally announced January 2007.
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Spin dynamics in semiconductor nanostructures
Authors:
M. W. Wu,
M. Q. Weng,
J. L. Cheng
Abstract:
We review our theoretical investigation on the spin relaxation/dephasing in spin precession and spin diffusion/transport in semiconductor nanostructures based on the kinetic spin Bloch equation approach.
We review our theoretical investigation on the spin relaxation/dephasing in spin precession and spin diffusion/transport in semiconductor nanostructures based on the kinetic spin Bloch equation approach.
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Submitted 25 November, 2006;
originally announced November 2006.
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Spin relaxation time, spin dephasing time and ensemble spin dephasing time in $n$-type GaAs quantum wells
Authors:
C. Lü,
J. L. Cheng,
M. W. Wu,
I. C. da Cunha Lima
Abstract:
We investigate the spin relaxation and spin dephasing of $n$-type GaAs quantum wells. We obtain the spin relaxation time $T_1$, the spin dephasing time $T_2$ and the ensemble spin dephasing time $T_2^{\ast}$ by solving the full microscopic kinetic spin Bloch equations, and we show that, analogous to the common sense in an isotropic system for conduction electrons, $T_1$, $T_2$ and $T_2^{\ast}$ a…
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We investigate the spin relaxation and spin dephasing of $n$-type GaAs quantum wells. We obtain the spin relaxation time $T_1$, the spin dephasing time $T_2$ and the ensemble spin dephasing time $T_2^{\ast}$ by solving the full microscopic kinetic spin Bloch equations, and we show that, analogous to the common sense in an isotropic system for conduction electrons, $T_1$, $T_2$ and $T_2^{\ast}$ are identical due to the short correlation time. The inhomogeneous broadening induced by the D'yakonov-Perel term is suppressed by the scattering, especially the Coulomb scattering, in this system.
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Submitted 5 February, 2007; v1 submitted 18 October, 2006;
originally announced October 2006.
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Spin diffusion/transport in $n$-type GaAs quantum wells
Authors:
J. L. Cheng,
M. W. Wu
Abstract:
The spin diffusion/transport in $n$-type (001) GaAs quantum well at high temperatures ($\ge120$ K) is studied by setting up and numerically solving the kinetic spin Bloch equations together with the Poisson equation self-consistently. All the scattering, especially the electron-electron Coulomb scattering, is explicitly included and solved in the theory. This enables us to study the system far a…
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The spin diffusion/transport in $n$-type (001) GaAs quantum well at high temperatures ($\ge120$ K) is studied by setting up and numerically solving the kinetic spin Bloch equations together with the Poisson equation self-consistently. All the scattering, especially the electron-electron Coulomb scattering, is explicitly included and solved in the theory. This enables us to study the system far away from the equilibrium, such as the hot-electron effect induced by the external electric field parallel to the quantum well. We find that the spin polarization/coherence oscillates along the transport direction even when there is no external magnetic field. We show that when the scattering is strong enough, electron spins with different momentums oscillate in the same phase which leads to equal transversal spin injection length and ensemble transversal injection length. It is also shown that the intrinsic scattering is already strong enough for such a phenomena. The oscillation period is almost independent on the external electric field which is in agreement with the latest experiment in bulk system at very low temperature [Europhys. Lett. {\bf 75}, 597 (2006)]. The spin relaxation/dephasing along the diffusion/transport can be well understood by the inhomogeneous broadening, which is caused by the momentum-dependent diffusion and the spin-orbit coupling, and the scattering. The scattering, temperature, quantum well width and external magnetic/electric field dependence of the spin diffusion is studied in detail.
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Submitted 20 February, 2007; v1 submitted 18 August, 2006;
originally announced August 2006.
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Spin relaxation in $n$-type GaAs quantum wells from a full microscopic approach
Authors:
J. Zhou,
J. L. Cheng,
M. W. Wu
Abstract:
We perform a full microscopic investigation on the spin relaxation in $n$-type (001) GaAs quantum wells with Al$_{0.4}$Ga$_{0.6}$As barrier due to the D'yakonov-perel' mechanism from nearly 20 K to the room temperature by constructing and numerically solving the kinetic spin Bloch equations. We consider all the relevant scattering such as the electron--acoustic-phonon, the electron--longitudinal…
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We perform a full microscopic investigation on the spin relaxation in $n$-type (001) GaAs quantum wells with Al$_{0.4}$Ga$_{0.6}$As barrier due to the D'yakonov-perel' mechanism from nearly 20 K to the room temperature by constructing and numerically solving the kinetic spin Bloch equations. We consider all the relevant scattering such as the electron--acoustic-phonon, the electron--longitudinal-optical-phonon, the electron--nonmagnetic-impurity and the electron-electron Coulomb scattering to the spin relaxation. The spin relaxation times calculated from our theory with a fitting spin splitting parameter are in good agreement with the experimental data by Ohno {\em et al.} [Physica E {\bf 6}, 817 (2000)] over the whole temperature regime (from 20 K to 300 K). The value of the fitted spin splitting parameter agrees with many experiments and theoretical calculations. We further show the temperature dependence of the spin relaxation time under various conditions such as electron density, impurity density and well width. We predict a peak solely due to the Coulomb scattering in the spin relaxation time at low temperature ($<50$ K) in samples with low electron density ({\em e.g.}, density less than $1 \times 10^{11}$ cm$^{-2}$) but high mobility. This peak disappears in samples with high electron density ({\em e.g.} $2 \times 10^{11}$ cm$^{-2}$) and/or low mobility. The hot-electron spin kinetics at low temperature is also addressed with many features quite different from the high temperature case predicted.
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Submitted 8 November, 2006; v1 submitted 31 May, 2006;
originally announced June 2006.
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Hole spin dephasing in $p$-type semiconductor quantum wells
Authors:
C. Lü,
J. L. Cheng,
M. W. Wu
Abstract:
Hole spin dephasing time due to the D'yakonov-Perel' mechanism in $p$-type GaAs (100) quantum wells with well separated light-hole and heavy-hole bands is studied by constructing and numerically solving the kinetic spin Bloch equations. We include all the spin-conserving scattering such as the hole-phonon and the hole-nonmagnetic impurity as well as the hole-hole Coulomb scattering in our calcul…
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Hole spin dephasing time due to the D'yakonov-Perel' mechanism in $p$-type GaAs (100) quantum wells with well separated light-hole and heavy-hole bands is studied by constructing and numerically solving the kinetic spin Bloch equations. We include all the spin-conserving scattering such as the hole-phonon and the hole-nonmagnetic impurity as well as the hole-hole Coulomb scattering in our calculation. Different effects such as the temperature, the hole density, the impurity density and the Rashba coefficient on the spin dephasing are investigated in detail. We also show that the Coulomb scattering makes marked contribution to the spin dephasing. The spin dephasing time can either increase or decrease with temperature, hole/impurity density or the inclusion of the Coulomb scattering depending on the relative importance of the spin-orbit coupling and the scattering. It is also shown that due to the different spin-orbit coupling strengthes, many spin dephasing properties of holes are quite different from those of electrons.
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Submitted 15 February, 2006; v1 submitted 16 December, 2005;
originally announced December 2005.
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Spin relaxation under identical Dresselhaus and Rashba coupling strengths in GaAs quantum wells
Authors:
J. L. Cheng,
M. W. Wu
Abstract:
Spin relaxation under identical Dresselhaus and Rashba coupling strengths in GaAs quantum wells is studied in both the traditional collinear statistics, where the energy spectra do not contain the spin-orbit coupling terms, and the helix statistics, where the spin-orbit couplings are included in the energy spectra. We show that there is only marginal difference between the spin relaxation times…
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Spin relaxation under identical Dresselhaus and Rashba coupling strengths in GaAs quantum wells is studied in both the traditional collinear statistics, where the energy spectra do not contain the spin-orbit coupling terms, and the helix statistics, where the spin-orbit couplings are included in the energy spectra. We show that there is only marginal difference between the spin relaxation times obtained from these two different statistics. We further show that with the cubic term of the Dresselhaus spin-orbit coupling included, the spin relaxation time along the (1,1,0) direction becomes finite, although it is still much longer than that along the other two perpendicular directions. The properties of the spin relaxation along this special direction under varies conditions are studied in detail.
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Submitted 24 February, 2006; v1 submitted 21 July, 2005;
originally announced July 2005.
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Diffusion and transport of spin pulses in an $n$-type semiconductor quantum well
Authors:
L. Jiang,
M. Q. Weng,
M. W. Wu,
J. L. Cheng
Abstract:
We perform a theoretical investigation on the time evolution of spin pulses in an $n$-type GaAs (001) quantum well with and without external electric field at high temperatures by constructing and numerically solving the kinetic spin Bloch equations and the Poisson equation, with the electron-phonon, electron-impurity and electron-electron Coulomb scattering explicitly included. The effect of th…
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We perform a theoretical investigation on the time evolution of spin pulses in an $n$-type GaAs (001) quantum well with and without external electric field at high temperatures by constructing and numerically solving the kinetic spin Bloch equations and the Poisson equation, with the electron-phonon, electron-impurity and electron-electron Coulomb scattering explicitly included. The effect of the Coulomb scattering, especially the effect of the Coulomb drag on the spin diffusion/transport is investigated and it is shown that the spin oscillations and spin polarization reverse along the direction of spin diffusion in the absence of the applied magnetic field, which were originally predicted in the absence of the Coulomb scattering by Weng and Wu [J. Appl. Phys. {\bf 93}, 410 (2003)], can sustain the Coulomb scattering at high temperatures ($\sim 200$ K). The results obtained are consistent with a recent experiment in bulk GaAs but at a very low temperature (4 K) by Crooker and Smith [Phys. Rev. Lett. {\bf 94}, 236601 (2005)].
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Submitted 18 October, 2005; v1 submitted 15 March, 2005;
originally announced March 2005.
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Comment on "Spin-split two-dimensional electron gas perturbed by intense terahertz laser field"
Authors:
J. L. Cheng
Abstract:
We show that the time-dependent wavefunctions which serve as basis of the whole paper of Xu [Phys. Rev. B {\bf 70}, 193301 (2004)] are incorrect and point out the right ones.
We show that the time-dependent wavefunctions which serve as basis of the whole paper of Xu [Phys. Rev. B {\bf 70}, 193301 (2004)] are incorrect and point out the right ones.
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Submitted 8 November, 2004;
originally announced November 2004.
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Intense terahertz laser fields on a two-dimensional electron gas with Rashba spin-orbit coupling
Authors:
J. L. Cheng,
M. W. Wu
Abstract:
The spin-dependent density of states and the density of spin polarization of an InAs-based two-dimensional electron gas with the Rashba spin-orbit coupling under an intense terahertz laser field are investigated by utilizing the Floquet states to solve the time-dependent Schrödinger equation.
It is found that both densities are strongly affected by the terahertz laser field. Especially a terahe…
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The spin-dependent density of states and the density of spin polarization of an InAs-based two-dimensional electron gas with the Rashba spin-orbit coupling under an intense terahertz laser field are investigated by utilizing the Floquet states to solve the time-dependent Schrödinger equation.
It is found that both densities are strongly affected by the terahertz laser field. Especially a terahertz magnetic moment perpendicular to the external terahertz laser field in the electron gas is induced. This effect can be used to convert terahertz electric signals into terahertz magnetic ones efficiently.
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Submitted 13 October, 2004; v1 submitted 7 October, 2004;
originally announced October 2004.
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Hole spin relaxation in semiconductor quantum dots
Authors:
C. Lü,
J. L. Cheng,
M. W. Wu
Abstract:
Hole spin relaxation time due to the hole-acoustic phonon scattering in GaAs quantum dots confined in quantum wells along (001) and (111) directions is studied after the exact diagonalization of Luttinger Hamiltonian. Different effects such as strain, magnetic field, quantum dot diameter, quantum well width and the temperature on the spin relaxation time are investigated thoroughly. Many feature…
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Hole spin relaxation time due to the hole-acoustic phonon scattering in GaAs quantum dots confined in quantum wells along (001) and (111) directions is studied after the exact diagonalization of Luttinger Hamiltonian. Different effects such as strain, magnetic field, quantum dot diameter, quantum well width and the temperature on the spin relaxation time are investigated thoroughly. Many features which are quite different from the electron spin relaxation in quantum dots and quantum wells are presented with the underlying physics elaborated.
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Submitted 9 September, 2004;
originally announced September 2004.
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Spin relaxations in semiconductor quantum dots
Authors:
J. L. Cheng,
M. W. Wu,
C. Lü
Abstract:
The spin relaxation time due to the electron-acoustic phonon scattering in GaAs quantum dots is studied after the exact diagonalization of the electron Hamiltonian with the spin-orbit coupling. Different effects such as the magnetic field, the quantum dot size, the temperature as well as the electric field on the spin relaxation time are investigated in detail. Moreover, we show that the perturb…
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The spin relaxation time due to the electron-acoustic phonon scattering in GaAs quantum dots is studied after the exact diagonalization of the electron Hamiltonian with the spin-orbit coupling. Different effects such as the magnetic field, the quantum dot size, the temperature as well as the electric field on the spin relaxation time are investigated in detail. Moreover, we show that the perturbation method widely used in the literature is inadequate in accounting for the electron structure and therefore the spin relaxation time.
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Submitted 18 November, 2003; v1 submitted 2 October, 2003;
originally announced October 2003.
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Manipulation of spin dephasing in InAs quantum wires
Authors:
J. L. Cheng,
M. Q. Weng,
M. W. Wu
Abstract:
The spin dephasing due to the Rashba spin-orbit coupling, especially its dependence on the direction of the electric field is studied in InAs quantum wire. We find that the spin dephasing is strongly affected by the angle of Rashba effective magnetic field and the applied magnetic field. The nonlinearity in spin dephasing time versus the direction of the electric field shows a potential evenue t…
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The spin dephasing due to the Rashba spin-orbit coupling, especially its dependence on the direction of the electric field is studied in InAs quantum wire. We find that the spin dephasing is strongly affected by the angle of Rashba effective magnetic field and the applied magnetic field. The nonlinearity in spin dephasing time versus the direction of the electric field shows a potential evenue to manipulate the spin lifetime in spintronic device. Moreover, we figure out a quantity that can well represent the inhomogeneous broadening of the system which may help us to understand the many-body spin dephasing due to the Rashba effect.
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Submitted 19 May, 2003;
originally announced May 2003.
