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Mid-infrared GeSn Electro-Absorption Optical Modulators on Silicon
Authors:
Jun-Han Lin,
Bo-Jun Huang,
H. H. Cheng,
Guo-En Chang
Abstract:
Mid-infrared silicon photonics has recently emerged as a new technology for a wide range of applications such as optical communication, lidar, and bio-sensing. One key component enabling this technology is the mid-infrared optical modulator used for encoding optical signals. Here, we present a GeSn electro-absorption modulator that can operate in the mid-infrared range. Importantly, this device is…
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Mid-infrared silicon photonics has recently emerged as a new technology for a wide range of applications such as optical communication, lidar, and bio-sensing. One key component enabling this technology is the mid-infrared optical modulator used for encoding optical signals. Here, we present a GeSn electro-absorption modulator that can operate in the mid-infrared range. Importantly, this device is monolithically integrated on a silicon substrate, which provides compatibility with standard complementary metal-oxide-semiconductor technology for scalable manufacturing. By alloying Ge with Sn to engineer the bandgap, we observed a clear Franz-Keldysh effect and achieved optimal modulation in the mid-infrared range of 2067-2208 nm with a maximum absorption ratio of 1.8. The results on the Si-based mid-infrared optical modulator open a new avenue for next-generation mid-infrared silicon photonics.
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Submitted 24 August, 2018;
originally announced September 2018.
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Probing Landau quantisation with the presence of insulator-quantum Hall transition in a GaAs two-dimensional electron system
Authors:
Kuang Yao Chen,
Y. H. Chang,
C. -T. Liang,
N. Aoki,
Y. Ochiai,
C. F. Huang,
Li-Hung Lin,
K. A. Cheng,
H. H. Cheng,
H. H. Lin,
Jau-Yang Wu,
Sheng-Di Lin
Abstract:
Magneto-transport measurements are performed on the two-dimensional electron system (2DES) in an AlGaAs/GaAs heterostructure. By increasing the magnetic field perpendicular to the 2DES, magnetoresistivity oscillations due to Landau quantisation can be identified just near the direct insulator-quantum Hall (I-QH) transition. However, different mobilities are obtained from the oscillations and tra…
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Magneto-transport measurements are performed on the two-dimensional electron system (2DES) in an AlGaAs/GaAs heterostructure. By increasing the magnetic field perpendicular to the 2DES, magnetoresistivity oscillations due to Landau quantisation can be identified just near the direct insulator-quantum Hall (I-QH) transition. However, different mobilities are obtained from the oscillations and transition point. Our study shows that the direct I-QH transition does not always correspond to the onset of strong localisation.
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Submitted 11 February, 2008;
originally announced February 2008.
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An experimental study on $Γ$(2) modular symmetry in the quantum Hall system with a small spin-splitting
Authors:
C. F. Huang,
Y. H. Chang,
H. H. Cheng,
Z. P. Yang,
H. D. Yeh,
C. H. Hsu,
C. -T. Liang,
D. R. Hang,
H. H. Lin
Abstract:
Magnetic-field-induced phase transitions were studied with a two-dimensional electron AlGaAs/GaAs system. The temperature-driven flow diagram shows the features of the $Γ$(2) modular symmetry, which includes distorted flowlines and shiftted critical point. The deviation of the critical conductivities is attributed to a small but resolved spin splitting, which reduces the symmetry in Landau quant…
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Magnetic-field-induced phase transitions were studied with a two-dimensional electron AlGaAs/GaAs system. The temperature-driven flow diagram shows the features of the $Γ$(2) modular symmetry, which includes distorted flowlines and shiftted critical point. The deviation of the critical conductivities is attributed to a small but resolved spin splitting, which reduces the symmetry in Landau quantization. [B. P. Dolan, Phys. Rev. B 62, 10278.] Universal scaling is found under the reduction of the modular symmetry. It is also shown that the Hall conductivity could still be governed by the scaling law when the semicircle law and the scaling on the longitudinal conductivity are invalid. *corresponding author:[email protected]
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Submitted 26 December, 2006; v1 submitted 13 September, 2006;
originally announced September 2006.
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A study on the universality of the magnetic-field-induced phase transitions in the two-dimensional electron system in an AlGaAs/GaAs heterostructure
Authors:
C. F. Huang,
Y. H. Chang,
H. H. Cheng,
C. -T. Liang,
G. J. Hwang
Abstract:
Plateau-plateau (P-P) and insulator-quantum Hall conductor (I-QH) transitions are observed in the two-dimensional electron system in an AlGaAs/GaAs heterostructure. At high fields, the critical conductivities are not of the expected universal values and the temperature-dependence of the width of the P-P transition does not follow the universal scaling. However, the semicircle law still holds, an…
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Plateau-plateau (P-P) and insulator-quantum Hall conductor (I-QH) transitions are observed in the two-dimensional electron system in an AlGaAs/GaAs heterostructure. At high fields, the critical conductivities are not of the expected universal values and the temperature-dependence of the width of the P-P transition does not follow the universal scaling. However, the semicircle law still holds, and universal scaling behavior was found in the P-P transition after map** it to the I-QH transition by the Landau-level addition transformation. We pointed out that in order to get a correct critical exponent, it is essential that the scaling analysis must be performed near the critical point. And with proper analysis, we found that the P-P transition and the insulator quantum Hall conductor transitions are of the same universal class.
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Submitted 10 April, 2004;
originally announced April 2004.
