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Current-induced magnetization switching in CoTb amorphous single layer
Authors:
R. Q. Zhang,
L. Y. Liao,
X. Z. Chen,
T. Xu,
L. Cai,
M. H. Guo,
Hao Bai,
L. Sun,
F. H. Xue,
J. Su,
X. Wang,
C. H. Wan,
Hua Bai,
Y. X. Song,
R. Y. Chen,
N. Chen,
W. J. Jiang,
X. F. Kou,
J. W. Cai,
H. Q. Wu,
F. Pan,
C. Song
Abstract:
We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density keeps almost constant. Without the need of overcoming the strong interfacial Dzyaloshinskii-Moriya interaction caused by the heavy metal, a quite low assistant…
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We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density keeps almost constant. Without the need of overcoming the strong interfacial Dzyaloshinskii-Moriya interaction caused by the heavy metal, a quite low assistant field of ~20 Oe is sufficient to realize the fully switching. The SOT effective field decreases and undergoes a sign change with the decrease of the Tb-concentration, implying that a combination of the spin Hall effect from both Co and Tb as well as an asymmetric spin current absorption accounts for the SOT switching mechanism. Our findings would advance the use of magnetic materials with bulk PMA for energy-efficient and thermal-stable non-volatile memories, and add a different dimension for understanding the ordering and asymmetry in amorphous thin films.
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Submitted 18 June, 2020;
originally announced June 2020.
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Strong orientation dependent spin-orbit torque in antiferromagnet Mn2Au
Authors:
X. F. Zhou,
J. Zhang,
F. Li,
X. Z. Chen,
G. Y. Shi,
Y. Z. Tan,
Y. D. Gu,
M. S. Saleem,
H. Q. Wu,
F. Pan,
C. Song
Abstract:
Antiferromagnets with zero net magnetic moment, strong anti-interference and ultrafast switching speed have potential competitiveness in high-density information storage. Body centered tetragonal antiferromagnet Mn2Au with opposite spin sub-lattices is a unique metallic material for Néel-order spin-orbit torque (SOT) switching. Here we investigate the SOT switching in quasi-epitaxial (103), (101)…
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Antiferromagnets with zero net magnetic moment, strong anti-interference and ultrafast switching speed have potential competitiveness in high-density information storage. Body centered tetragonal antiferromagnet Mn2Au with opposite spin sub-lattices is a unique metallic material for Néel-order spin-orbit torque (SOT) switching. Here we investigate the SOT switching in quasi-epitaxial (103), (101) and (204) Mn2Au films prepared by a simple magnetron sputtering method. We demonstrate current induced antiferromagnetic moment switching in all the prepared Mn2Au films by a short current pulse at room temperature, whereas different orientated films exhibit distinguished switching characters. A direction-independent reversible switching is attained in Mn2Au (103) films due to negligible magnetocrystalline anisotropy energy, while for Mn2Au (101) and (204) films, the switching is invertible with the current applied along the in-plane easy axis and its vertical axis, but becomes attenuated seriously during initially switching circles when the current is applied along hard axis, because of the existence of magnetocrystalline anisotropy energy. Besides the fundamental significance, the strong orientation dependent SOT switching, which was not realized irrespective of ferromagnet and antiferromagnet, provides versatility for spintronics.
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Submitted 15 April, 2018;
originally announced April 2018.
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Antidam** torque-induced switching in biaxial antiferromagnetic insulators
Authors:
X. Z. Chen,
R. Zarzuela,
J. Zhang,
C. Song,
X. F. Zhou,
G. Y. Shi,
F. Li,
H. A. Zhou,
W. J. Jiang,
F. Pan,
Y. Tserkovnyak
Abstract:
We investigate the current-induced switching of the Neel order in NiO(001)/Pt heterostructures,which is manifested electrically via the spin Hall magnetoresistance. Significant reversible changes in the longitudinal and transverse resistances are found at room temperature for a current threshold lying in the range of 10^7 A/cm^2. The order-parameter switching is ascribed to the antiferromagnetic d…
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We investigate the current-induced switching of the Neel order in NiO(001)/Pt heterostructures,which is manifested electrically via the spin Hall magnetoresistance. Significant reversible changes in the longitudinal and transverse resistances are found at room temperature for a current threshold lying in the range of 10^7 A/cm^2. The order-parameter switching is ascribed to the antiferromagnetic dynamics triggered by the (current-induced) antidam** torque, which orients the Neel order towards the direction of the writing current. This is in stark contrast to the case of antiferromagnets such as Mn2Au and CuMnAs, where field-like torques induced by the Edelstein effect drive the Neel switching, therefore resulting in an orthogonal alignment between the Neel order and the writing current. Our findings can be readily generalized to other biaxial antiferromagnets, providing broad opportunities for all-electrical writing and readout in antiferromagnetic spintronics.
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Submitted 15 April, 2018;
originally announced April 2018.
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Echo-Ramsey Interferometry with Motional Quantum States
Authors:
D. Hu,
L. X. Niu,
S. J. **,
X. Z. Chen,
G. J. Dong,
J. Schmiedmayer,
X. J. Zhou
Abstract:
Ramsey interferometers (RIs) using internal electronic or nuclear states find wide applications in science and engineering. We develop a matter wave Ramsey interferometer for motional quantum states exploiting the S- and D-bands of an optical lattice and identify the different de-phasing and de-coherence mechanisms. We implement a band echo technique, employing repeated $π$-pulses. This suppresses…
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Ramsey interferometers (RIs) using internal electronic or nuclear states find wide applications in science and engineering. We develop a matter wave Ramsey interferometer for motional quantum states exploiting the S- and D-bands of an optical lattice and identify the different de-phasing and de-coherence mechanisms. We implement a band echo technique, employing repeated $π$-pulses. This suppresses the de-phasing evolution and significantly increase the coherence time of the motional state interferometer by one order of magnitude. We identify thermal fluctuations as the main mechanism for the remaining decay contrast. Our demonstration of an echo-Ramsey interferometer with motional quantum states in an optical lattice has potential application in the study of quantum many body lattice dynamics, and motional qubits manipulation.
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Submitted 20 December, 2017;
originally announced December 2017.
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Giant tunnel magnetoresistance with a single magnetic phase-transition electrode
Authors:
Jia Zhang,
X. Z. Chen,
C. Song,
J. F. Feng,
H. X. Wei,
**g-Tao Lü
Abstract:
Magnetic phase transition tunnel magnetoresistance (MPT-TMR) effect with a single magnetic electrode has been investigated by first-principles calculations. The calculations show that the MPT-TMR of FeRh/MgO/Cu tunnel junction can be as high as hundreds of percent when the magnetic structure of FeRh changes from G-type antiferromagnetic (GAFM) to ferromagnetic order. This new type of MPT-TMR may b…
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Magnetic phase transition tunnel magnetoresistance (MPT-TMR) effect with a single magnetic electrode has been investigated by first-principles calculations. The calculations show that the MPT-TMR of FeRh/MgO/Cu tunnel junction can be as high as hundreds of percent when the magnetic structure of FeRh changes from G-type antiferromagnetic (GAFM) to ferromagnetic order. This new type of MPT-TMR may be superior to the tunnel anisotropic magnetoresistance because of its huge magneto-resistance effect and similar structural simplicity. The main mechanism for the giant MPT-TMR can be attributed to the formation of interface resonant states at GAFM-FeRh/MgO interface. A direct FeRh/MgO interface is found to be necessary for achieving high MPT-TMR experimentally. Moreover, we find the FeRh/MgO interface with FeRh in ferromagnetic phase has nearly full spin-polarization due to the negligible majority transmission and significantly different Fermi surface of two spin channels. Thus, it may act as a highly efficient and tunable spin-injector. In addition, electric field driven MPT of FeRh-based hetero-magnetic nanostructures can be utilized to design various energy efficient tunnel junction structures and the corresponding lower power consumption devices. Our results will stimulate further experimental investigations of MPT-TMR and other fascinating phenomenon of FeRh-based tunnel junctions that may be promising in antiferromagnetic spintronics.
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Submitted 6 March, 2018; v1 submitted 3 September, 2017;
originally announced September 2017.
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Tunneling anisotropic magnetoresistance driven by magnetic phase transition
Authors:
X. Z. Chen,
J. F. Feng,
Z. C. Wang,
J. Zhang,
X. Y. Zhong,
C. Song,
L. **,
B. Zhang,
F. Li,
M. Jiang,
Y. Z. Tan,
X. J. Zhou,
G. Y. Shi,
X. F. Zhou,
X. D. Han,
S. C. Mao,
Y. H. Chen,
X. F. Han,
F. Pan
Abstract:
The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here we report an alternative approach to o…
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The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in alfa-FeRh-based junctions driven by the magnetic phase transition of alfa-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one alfa-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the alfa-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.
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Submitted 21 June, 2017;
originally announced June 2017.
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Terahertz spin currents and inverse spin Hall effect in thin-film heterostructures containing complex magnetic compounds
Authors:
T. Seifert,
U. Martens,
S. Günther,
M. A. W. Schoen,
F. Radu,
X. Z. Chen,
I. Lucas,
R. Ramos,
M. H. Aguirre,
P. A. Algarabel,
A. Anadón,
H. Körner,
J. Walowski,
C. Back,
M. R. Ibarra,
L. Morellón,
E. Saitoh,
M. Wolf,
C. Song,
K. Uchida,
M. Münzenberg,
I. Radu,
T. Kampfrath
Abstract:
Terahertz emission spectroscopy of ultrathin multilayers of magnetic and heavy metals has recently attracted much interest. This method not only provides fundamental insights into photoinduced spin transport and spin-orbit interaction at highest frequencies but has also paved the way to applications such as efficient and ultrabroadband emitters of terahertz electromagnetic radiation. So far, predo…
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Terahertz emission spectroscopy of ultrathin multilayers of magnetic and heavy metals has recently attracted much interest. This method not only provides fundamental insights into photoinduced spin transport and spin-orbit interaction at highest frequencies but has also paved the way to applications such as efficient and ultrabroadband emitters of terahertz electromagnetic radiation. So far, predominantly standard ferromagnetic materials have been exploited. Here, by introducing a suitable figure of merit, we systematically compare the strength of terahertz emission from X/Pt bilayers with X being a complex ferro-, ferri- and antiferromagnetic metal, that is, dysprosium cobalt (DyCo$_5$), gadolinium iron (Gd$_{24}$Fe$_{76}$), Magnetite (Fe$_3$O$_4$) and iron rhodium (FeRh). We find that the performance in terms of spin-current generation not only depends on the spin polarization of the magnet's conduction electrons but also on the specific interface conditions, thereby suggesting terahertz emission spectroscopy to be a highly surface-sensitive technique. In general, our results are relevant for all applications that rely on the optical generation of ultrafast spin currents in spintronic metallic multilayers.
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Submitted 14 July, 2021; v1 submitted 31 May, 2017;
originally announced May 2017.
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The temperature dependence of FeRh's transport properties
Authors:
S. Mankovsky,
S. Polesya,
K. Chadova,
H. Ebert,
J. B. Staunton,
T. Gruenbaum,
M. A. W. Schoen,
C. H. Back,
X. Z. Chen,
C. Song
Abstract:
The finite-temperature transport properties of FeRh compounds are investigated by first-principles Density Functional Theory-based calculations. The focus is on the behavior of the longitudinal resistivity with rising temperature, which exhibits an abrupt decrease at the metamagnetic transition point, $T = T_m$ between ferro- and antiferromagnetic phases. A detailed electronic structure investigat…
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The finite-temperature transport properties of FeRh compounds are investigated by first-principles Density Functional Theory-based calculations. The focus is on the behavior of the longitudinal resistivity with rising temperature, which exhibits an abrupt decrease at the metamagnetic transition point, $T = T_m$ between ferro- and antiferromagnetic phases. A detailed electronic structure investigation for $T \geq 0$ K explains this feature and demonstrates the important role of (i) the difference of the electronic structure at the Fermi level between the two magnetically ordered states and (ii) the different degree of thermally induced magnetic disorder in the vicinity of $T_m$, giving different contributions to the resistivity. To support these conclusions, we also describe the temperature dependence of the spin-orbit induced anomalous Hall resistivity and Gilbert dam** parameter. For the various response quantities considered the impact of thermal lattice vibrations and spin fluctuations on their temperature dependence is investigated in detail. Comparison with corresponding experimental data finds in general a very good agreement.
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Submitted 7 June, 2016;
originally announced June 2016.
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Controlling soliton interactions in Bose-Einstein condensates by synchronizing the Feshbach resonance and harmonic trap
Authors:
Xiao-Fei Zhang,
Qin Yang,
Jie-Fang Zhang,
X. Z. Chen,
W. M. Liu
Abstract:
We present how to control interactions between solitons, either bright or dark, in Bose-Einstein condensates by synchronizing Feshbach resonance and harmonic trap. Our results show that as long as the scattering length is to be modulated in time via a changing magnetic field near the Feshbach resonance, and the harmonic trap** frequencies are also modulated in time, exact solutions of the one-…
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We present how to control interactions between solitons, either bright or dark, in Bose-Einstein condensates by synchronizing Feshbach resonance and harmonic trap. Our results show that as long as the scattering length is to be modulated in time via a changing magnetic field near the Feshbach resonance, and the harmonic trap** frequencies are also modulated in time, exact solutions of the one-dimensional nonlinear Schrödinger equation can be found in a general closed form, and interactions between two solitons are modulated in detail in currently experimental conditions. We also propose experimental protocols to observe the phenomena such as fusion, fission, warp, oscillation, elastic collision in future experiments.
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Submitted 28 August, 2008;
originally announced August 2008.
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Preparation and transport properties of non-hydrated Na$_{0.5}$CoO$_2$ single crystals
Authors:
X. Z. Chen,
Z. A. Xu,
G. H. Cao,
J. Q. Shen,
L. M. Qiu,
Z. H. Gan
Abstract:
Single crystals of Na$_{0.5}$CoO$_2$ were obtained through a flux method followed by de-intercalation of sodium. The Na$_{0.5}$CoO$_2$ samples were found to be vulnerable to water in the air and a hydration process in which H$_2$O molecules fill oxygen vacancies in CoO$_2$ layers is suggested to be responsible for the unusual vulnerability to water. The transport properties, including resistivit…
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Single crystals of Na$_{0.5}$CoO$_2$ were obtained through a flux method followed by de-intercalation of sodium. The Na$_{0.5}$CoO$_2$ samples were found to be vulnerable to water in the air and a hydration process in which H$_2$O molecules fill oxygen vacancies in CoO$_2$ layers is suggested to be responsible for the unusual vulnerability to water. The transport properties, including resistivity (\emph{$ρ$}), thermopower (\emph{S}) and Hall coefficient (\emph{R$_H$}), were studied in a temperature range of 5-300 K. The compound shows a weak localization of carriers just below 200 K and Co$^{3+}$-Co$^{4+}$ charge ordering at about 30 K, a relatively lower temperature than previously reported. The results seem to be quite different from those previously reported for this system [Foo et al, Phys. Rev. Lett. 92 (2004) 247001]. Possible mechanism underlying this kind of inconsistency is discussed.
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Submitted 11 December, 2004;
originally announced December 2004.
