Showing 1–4 of 4 results for author: Chen, J C H

Using a tunable quantum wire to measure the large out-of-plane spin splitting of quasi two-dimensional holes in a GaAs nanostructure

Authors: A. Srinivasan, L. A. Yeoh, O. Klochan, T. P. Martin, J. C. H. Chen, A. P. Micolich, A. R. Hamilton, D. Reuter, A. D. Wieck

Abstract: The out-of-plane g-factor g_perp for quasi-2D holes in a (100) GaAs heterostructure is studied using a variable width quantum wire. A direct measurement of the Zeeman splitting is performed in a magnetic field applied perpendicular to the 2D plane. We measure an out-of-plane g-factor up to g_perp = 5, which is larger than previous optical studies of g_perp, and is approaching the long predicted bu… ▽ More The out-of-plane g-factor g_perp for quasi-2D holes in a (100) GaAs heterostructure is studied using a variable width quantum wire. A direct measurement of the Zeeman splitting is performed in a magnetic field applied perpendicular to the 2D plane. We measure an out-of-plane g-factor up to g_perp = 5, which is larger than previous optical studies of g_perp, and is approaching the long predicted but never experimentally verified out-of-plane g-factor of 7.2 for heavy holes. △ Less

Submitted 30 January, 2013; originally announced January 2013.

Comments: 5 pages 4 Figures

Journal ref: A. Srinivasan et al., Nano Lett., 13(1), pp148-152, (2013)

Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

Authors: J. C. H. Chen, D. Q. Wang, O. Klochan, A. P. Micolich, K. Das Gupta, F. Sfigakis, D. A. Ritchie, D. Reuter, A. D. Wieck, A. R. Hamilton

Abstract: We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional (2D) electrons (… ▽ More We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional (2D) electrons ($μ_\textrm{peak}=4\times10^6\textrm{cm}^2/\textrm{Vs}$) and holes ($μ_\textrm{peak}=0.8\times10^6\textrm{cm}^2/\textrm{Vs}$) in the same conduction channel with nominally identical disorder potentials. We find significant discrepancies between electron and hole scattering, with the hole mobility being considerably lower than expected from simple theory. △ Less

Submitted 3 April, 2012; originally announced April 2012.

Comments: related papers at http://www.phys.unsw.edu.au/qed

Journal ref: Applied Physics Letters 100, 052101 (2012)

Fabrication and characterization of an induced GaAs single hole transistor

Authors: O. Klochan, J. C. H. Chen, A. P. Micolich, A. R. Hamilton, K. Muraki, Y. Hirayama

Abstract: We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation do**. Low temperature transport measurements reveal periodic conductance oscillations due to Coulomb blockade. We find that the low frequency charge noise is comparable to that in modulatio… ▽ More We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation do**. Low temperature transport measurements reveal periodic conductance oscillations due to Coulomb blockade. We find that the low frequency charge noise is comparable to that in modulation-doped GaAs single electron transistors (SETs), and almost an order of magnitude better than in silicon SETs. △ Less

Submitted 15 February, 2010; originally announced February 2010.

Comments: accepted for publication in Applied Physics Letters

Observation of orientation- and $k$-dependent Zeeman spin-splitting in hole quantum wires on (100)-oriented AlGaAs/GaAs heterostructures

Authors: J. C. H. Chen, O. Klochan, A. P. Micolich, A. R. Hamilton, T. P. Martin, L. H. Ho, U. Zuelicke, D. Reuter, A. D. Wieck

Abstract: We study the Zeeman spin-splitting in hole quantum wires oriented along the $[011]$ and $[01\bar{1}]$ crystallographic axes of a high mobility undoped (100)-oriented AlGaAs/GaAs heterostructure. Our data shows that the spin-splitting can be switched `on' (finite $g^{*}$) or `off' (zero $g^{*}$) by rotating the field from a parallel to a perpendicular orientation with respect to the wire, and the… ▽ More We study the Zeeman spin-splitting in hole quantum wires oriented along the $[011]$ and $[01\bar{1}]$ crystallographic axes of a high mobility undoped (100)-oriented AlGaAs/GaAs heterostructure. Our data shows that the spin-splitting can be switched `on' (finite $g^{*}$) or `off' (zero $g^{*}$) by rotating the field from a parallel to a perpendicular orientation with respect to the wire, and the properties of the wire are identical for the two orientations with respect to the crystallographic axes. We also find that the $g$-factor in the parallel orientation decreases as the wire is narrowed. This is in contrast to electron quantum wires, where the $g$-factor is enhanced by exchange effects as the wire is narrowed. This is evidence for a $k$-dependent Zeeman splitting that arises from the spin-3/2 nature of holes. △ Less

Submitted 29 September, 2009; originally announced September 2009.