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Demonstration of a low loss, highly stable and re-useable edge coupler for high heralding efficiency and low g^(2) (0) SOI correlated photon pair sources
Authors:
**yi Du,
George F. R. Chen,
Hongwei Gao,
James A. Grieve,
Dawn T. H. Tan,
Alexander Ling
Abstract:
We report a stable, low loss method for coupling light from silicon-on-insulator (SOI) photonic chips into optical fibers. The technique is realized using an on-chip tapered waveguide and a cleaved small core optical fiber. The on-chip taper is monolithic and does not require a patterned cladding, thus simplifying the chip fabrication process. The optical fiber segment is composed of a centimeter-…
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We report a stable, low loss method for coupling light from silicon-on-insulator (SOI) photonic chips into optical fibers. The technique is realized using an on-chip tapered waveguide and a cleaved small core optical fiber. The on-chip taper is monolithic and does not require a patterned cladding, thus simplifying the chip fabrication process. The optical fiber segment is composed of a centimeter-long small core fiber (UHNA7) which is spliced to SMF-28 fiber with less than -0.1 dB loss. We observe an overall coupling loss of -0.64 dB with this design. The chip edge and fiber tip can be butt coupled without damaging the on-chip taper or fiber. Friction between the surfaces maintains alignment leading to an observation of +-0.1 dB coupling fluctuation during a ten-day continuous measurement without use of any adhesive. This technique minimizes the potential for generating Raman noise in the fiber, and has good stability compared to coupling strategies based on longer UHNA fibers or fragile lensed fibers. We also applied the edge coupler on a correlated photon pair source and observed a raw coincidence count rate of 1.21 million cps and raw heralding efficiency of 21.3%. We achieved an auto correlation function g^(2) (0) as low as 0.0004 at the low pump power regime.
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Submitted 14 March, 2024; v1 submitted 28 December, 2023;
originally announced December 2023.
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Scanning phase imaging without accurate positioning system
Authors:
Tao Liu,
Bingyang Wang,
JiangTao Zhao,
Fu rong Chen,
Fucai Zhang
Abstract:
Ptychography, a high-resolution phase imaging technique using precise in-plane translation information, has been widely applied in modern synchrotron radiation sources across the globe. A key requirement for successful ptychographic reconstruction is the precise knowledge of the scanning positions, which are typically obtained by a physical interferometric positioning system. Whereas high-throughp…
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Ptychography, a high-resolution phase imaging technique using precise in-plane translation information, has been widely applied in modern synchrotron radiation sources across the globe. A key requirement for successful ptychographic reconstruction is the precise knowledge of the scanning positions, which are typically obtained by a physical interferometric positioning system. Whereas high-throughput positioning poses a challenge in engineering, especially in nano or even smaller scale. In this work, we propose a novel scanning imaging framework that does not require any prior position information from the positioning system. Specifically, our scheme utilizes the wavefront modulation mechanism to reconstruct the object functions at each scan position and the shared illumination function, simultaneously. The scanning trajectory information is extracted by our subpixel image registration algorithm from the overlap region of reconstructed object functions. Then, a completed object function can be obtained by assembling each part of the reconstructed sample functions. High-quality imaging of biological sample and position recovery with sub-pixel accuracy are demonstrated in proof-of-concept experiment. Based on current results, we find it may have great potential applications in high-resolution and high throughput phase imaging.
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Submitted 31 October, 2023;
originally announced November 2023.
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Homoepitaxy of rhombohedral-stacked MoS2 with room temperature switchable ferroelectricity
Authors:
Tilo H. Yang,
Hsiang-Chi Hu,
Fu-Xiang Rikudo Chen,
Po-Yen Lin,
Yu-Fan Chiang,
Wen-Hao Chang,
Yi-Hao Kuo,
Yu-Seng Ku,
Bor-Wei Liang,
Alice Chinghsuan Chang,
Han-Chieh Lo,
Yu-Chen Chang,
Yi-Cheng Chen,
Ting-Hua Lu,
Chun-Liang Lin,
Yann-Wen Lan
Abstract:
The discovery of interfacial ferroelectricity in two-dimensional rhombohedral (3R)-stacked semiconductors opens up a new pathway for achieving ultrathin computing-in-memory devices. However, exploring ferroelectricity switching in natural 3R crystals is difficult due to lack of co-existing 3R stacking domains. Here, we present that MoS2 homoepitaxial patterns with 3R polytypic domains can manifest…
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The discovery of interfacial ferroelectricity in two-dimensional rhombohedral (3R)-stacked semiconductors opens up a new pathway for achieving ultrathin computing-in-memory devices. However, exploring ferroelectricity switching in natural 3R crystals is difficult due to lack of co-existing 3R stacking domains. Here, we present that MoS2 homoepitaxial patterns with 3R polytypic domains can manifest switchable ferroelectricity at room-temperature. Based on the diffusion limited aggregation theory, such MoS2 patterns are formed under the low Mo chemical potential and low temperature with respect to common chemical vapor deposition synthesis. The alternation of 3R polytypes in the MoS2 homoepitaxial patterns, observed by scanning transmission electron microscopy, accounts for ferroelectricity switching. The MoS2 field-effect transistors with 3R polytypic domains exhibit a repeatable counterclockwise hysteresis with gate voltage swee**, an indication of ferroelectricity switching, and the memory window exceeds those measured for compact-shaped 3R bilayer devices. This work provides a direct growth concept for layered 3R-based ferroelectric memory.
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Submitted 24 May, 2022;
originally announced May 2022.
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Optical characterization of deuterated silicon-rich nitride waveguides
Authors:
Xavier X. Chia,
George F. R. Chen,
Yanmei Cao,
Peng Xing,
Doris K. T. Ng,
Dawn T. H. Tan
Abstract:
Chemical vapor deposition-based growth techniques allow flexible design of CMOS-compatible materials. Here, we report the deuterated silicon-rich nitride films grown using plasma-enhanced chemical vapor deposition. The linear and nonlinear properties of the films are characterized. We compare the absorption at 1550nm wavelength region for films grown with $SiH_4$ and $SiD_4$, and experimentally co…
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Chemical vapor deposition-based growth techniques allow flexible design of CMOS-compatible materials. Here, we report the deuterated silicon-rich nitride films grown using plasma-enhanced chemical vapor deposition. The linear and nonlinear properties of the films are characterized. We compare the absorption at 1550nm wavelength region for films grown with $SiH_4$ and $SiD_4$, and experimentally confirm that the silicon-rich nitride films grown with $SiD_4$ eliminates Si-H related absorption. Waveguides fabricated on the films are further shown to possess a linear and nonlinear refractive index of 2.46 and $9.8$ X $10^{-18} m^2 W^{-1}$ respectively.
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Submitted 21 February, 2022;
originally announced February 2022.
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Microresonator Frequency Comb Based High-Speed Transmission of Intensity Modulated Direct Detection Data
Authors:
Peng Xing,
George F. R. Chen,
Hongwei Gao,
Anuradha M. Agarwal,
Lionel C. Kimerling,
Dawn T. H. Tan
Abstract:
Globally, the long-haul transmission of ultra-high bandwidth data is enabled through coherent communications. Driven by the rapid pace of growth in interconnectivity over the last decade, long-haul data transmission has reached capacities on the order of tens to hundreds of terabits per second, over fiber reaches which may span thousands of kilometers. Data center communications however operate in…
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Globally, the long-haul transmission of ultra-high bandwidth data is enabled through coherent communications. Driven by the rapid pace of growth in interconnectivity over the last decade, long-haul data transmission has reached capacities on the order of tens to hundreds of terabits per second, over fiber reaches which may span thousands of kilometers. Data center communications however operate in a different regime, featuring shorter reaches and characterized as being more cost and power sensitive. While integrated microresonator frequency combs are poised to revolutionize light sources used for high-speed data transmission over fiber, their use has been limited to coherent detection schemes. In this paper, we demonstrate the use of microresonator frequency combs pumped with a single laser for the transmission of high-speed data, importantly using direct detection schemes. We achieve 120 Gb/s and 240 Gb/s aggregate data transmission for 30 Gb/s non-return-to-zero (NRZ) and 60 Gb/s pulse modulation amplitude 4 (PAM4) modulation formats respectively over 2 km of optical fiber, exceeding the reach, single lane data rate, and aggregate data rates specified in Parallel Single Mode 4 (PSM4) and Course Wavelength Division Multiplex 4 (CWDM4) multi-source agreements. Remarkably, we achieve an extremely low power penalty of 0.1 dB compared to back-to-back characterization. The results firmly cement CMOS-compatible micro-resonator frequency combs based high-speed data transmission as a viable technology for the cost and power sensitive data center transceiver industry.
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Submitted 12 November, 2021;
originally announced November 2021.
