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High efficiency coupling of free electrons to sub-$λ^3$ modal volume, high-Q photonic cavities
Authors:
Malo Bézard,
Imène Si Hadj Mohand,
Luigi Ruggierio,
Arthur Le Roux,
Yves Auad,
Paul Baroux,
Luiz H. G. Tizei,
Xavier Chécoury,
Mathieu Kociak
Abstract:
We report on the design, realization and experimental investigation by spatially resolved monochromated electron energy loss spectroscopy (EELS) of high quality factor cavities with modal volumes smaller than $λ^3$, with $λ$ the free-space wavelength of light. The cavities are based on a slot defect in a 2D photonic crystal slab made up of silicon. They are optimized for high coupling of electrons…
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We report on the design, realization and experimental investigation by spatially resolved monochromated electron energy loss spectroscopy (EELS) of high quality factor cavities with modal volumes smaller than $λ^3$, with $λ$ the free-space wavelength of light. The cavities are based on a slot defect in a 2D photonic crystal slab made up of silicon. They are optimized for high coupling of electrons accelerated to 100 kV, to quasi-Transverse Electrical modes polarized along the slot direction. We studied the cavities in two geometries. The first geometry, for which the cavities have been designed, corresponds to an electron beam travelling along the slot direction. The second consists in the electron beam travelling perpendicular to the slab. In both cases, a large series of modes is identified. The dielectric slot modes energies are measured to be in the 0.8- 0.85 eV range, as per design, and surrounded by two bands of dielectric and air modes of the photonic structure. The dielectric even slot modes, to which the cavity mode belongs, are highly coupled to the electrons with up to 3.2$\%$ probability of creating a slot photon per incident electron. Although the experimental spectral resolution (around 30 meV) alone does not allow to disentangle cavity photons from other slot photons, the remarkable agreement between the experiments and FDTD simulations permits us to deduce that amongst the photons created in the slot, around 30$\%$ are stored in the cavity mode. A systematic study of the energy and coupling strength as a function of the photonic band gap parameters permits to foresee increase of coupling strength by fine-tuning phase matching. Our work demonstrates free electron coupling to high quality factor cavities with low mode density, sub-$λ^3$ modal volume, making it an excellent candidate for applications such as quantum nano-optics with free electrons.
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Submitted 28 July, 2023;
originally announced July 2023.
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Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region
Authors:
Anas Elbaz,
Riazul Arefin,
Emilie Sakat,
Binbin Wang,
Etienne Herth,
Gilles Patriarche,
Antonino Foti,
Razvigor Ossikovski,
Sebastien Sauvage,
Xavier Checoury,
Konstantinos Pantzas,
Isabelle Sagnes,
Jérémie Chrétien,
Lara Casiez,
Mathieu Bertrand,
Vincent Calvo,
Nicolas Pauc,
Alexei Chelnokov,
Philippe Boucaud,
Frederic Boeuf,
Vincent Reboud,
Jean-Michel Hartmann,
Moustafa El Kurdi
Abstract:
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless su…
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GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7 \% to 10.5 \%. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4-\SI{8 }{\micro\meter} range. We evidence direct band gap in GeSn with 7 \% of Sn and lasing at 2-\SI{2.3 }{\micro\meter} wavelength under optical injection with reproducible lasing thresholds around \SI{10 }{\kilo\watt\per\square\centi\meter}, lower by one order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources.
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Submitted 21 December, 2020;
originally announced December 2020.
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Möbius Strip Microlasers: a Testbed for Non-Euclidean Photonics
Authors:
Yalei Song,
Yann Monceaux,
Stefan Bittner,
Kimhong Chao,
Héctor M. Reynoso de la Cruz,
Clément Lafargue,
Dominique Decanini,
Barbara Dietz,
Joseph Zyss,
Alain Grigis,
Xavier Checoury,
Melanie Lebental
Abstract:
We report on experiments with Möbius strip microlasers which were fabricated with high optical quality by direct laser writing. A Möbius strip, i.e., a band with a half twist, exhibits the fascinating property that it has a single nonorientable surface and a single boundary. We provide evidence that, in contrast to conventional ring or disk resonators, a Möbius strip cavity cannot sustain whisperi…
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We report on experiments with Möbius strip microlasers which were fabricated with high optical quality by direct laser writing. A Möbius strip, i.e., a band with a half twist, exhibits the fascinating property that it has a single nonorientable surface and a single boundary. We provide evidence that, in contrast to conventional ring or disk resonators, a Möbius strip cavity cannot sustain whispering gallery modes (WGM). Comparison between experiments and 3D finite difference time domain (FDTD) simulations reveals that the resonances are localized on periodic geodesics.
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Submitted 30 November, 2021; v1 submitted 24 November, 2020;
originally announced November 2020.
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Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform
Authors:
Farsane Tabataba-Vakili,
Blandine Alloing,
Benjamin Damilano,
Hassen Souissi,
Christelle Brimont,
Laetitia Doyennette,
Thierry Guillet,
Xavier Checoury,
Moustafa El Kurdi,
Sébastien Chenot,
Eric Frayssinet,
Jean-Yves Duboz,
Fabrice Semond,
Bruno Gayral,
Philippe Boucaud
Abstract:
Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley waveguide terminated by out-coupling gratings. We measure quality factors up to 3500 under continuous-wave excitation. Lasing is observed from 374 nm to 399 nm un…
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Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley waveguide terminated by out-coupling gratings. We measure quality factors up to 3500 under continuous-wave excitation. Lasing is observed from 374 nm to 399 nm under pulsed excitation, achieving low threshold energies of $0.14 ~\text{mJ/cm}^2$ per pulse (threshold peak powers of $35 ~\text{kW/cm}^2$). A large peak to background dynamic of around 200 is observed at the out-coupling grating for small gaps of 50 nm between the disk and waveguide. These devices operate at the limit of what can be achieved with GaN in terms of operation wavelength.
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Submitted 28 July, 2020; v1 submitted 24 June, 2020;
originally announced June 2020.
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Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys
Authors:
A. Elbaz,
D. Buca,
N. Von den Driesch,
K. Pantzas,
G. Patriarche,
N. Zerounian,
E. Herth,
X. Checoury,
S. Sauvage,
I. Sagnes,
A. Foti,
R. Ossikovski,
J. -M. Hartmann,
F. Boeuf,
Z. Ikonic,
P. Boucaud,
D. Grutzmacher,
M. El Kurdi
Abstract:
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn la…
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GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn layer with 5.4 at.% Sn, which is an indirect band-gap semiconductor as-grown with a compressive strain of -0.32 %, is transformed via tensile strain engineering into a truly direct band-gap semiconductor. In this approach the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. Continuous wave (cw) as well as pulsed lasing are observed at very low optical pump powers. Lasers with emission wavelength of 2.5 um have thresholds as low as 0.8kWcm^-2 for ns-pulsed excitation, and 1.1kWcm^-2 under cw excitation. These thresholds are more than two orders of magnitude lower than those previously reported for bulk GeSn lasers, approaching these values obtained for III-V lasers on Si. The present results demonstrate the feasabiliy and are the guideline for monolithically integrated Si-based laser sources on Si photonics platform.
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Submitted 14 January, 2020;
originally announced January 2020.
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Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon
Authors:
Farsane Tabataba-Vakili,
Laetitia Doyennette,
Christelle Brimont,
Thierry Guillet,
Stéphanie Rennesson,
Benjamin Damilano,
Eric Frayssinet,
Jean-Yves Duboz,
Xavier Checoury,
Sébastien Sauvage,
Moustafa El Kurdi,
Fabrice Semond,
Bruno Gayral,
Philippe Boucaud
Abstract:
On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus waveguides in III-nitride on silicon. We report on the interplay between microdisk-waveguide coupling and its optical properties. We observe critical coupling and phase…
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On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus waveguides in III-nitride on silicon. We report on the interplay between microdisk-waveguide coupling and its optical properties. We observe critical coupling and phase matching, i.e. the most efficient energy transfer scheme, for very short gap sizes and thin waveguides (g = 45 nm and w = 170 nm) in the spontaneous emission regime. Whispering gallery mode lasing is demonstrated for a wide range of parameters with a strong dependence of the threshold on the loaded quality factor. We show the dependence and high sensitivity of the output signal on the coupling. Lastly, we observe the impact of processing on the tuning of mode resonances due to the very short coupling distances. Such small footprint on-chip integrated microlasers providing maximum energy transfer into a photonic circuit have important potential applications for visible-light communication and lab-on-chip bio-sensors.
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Submitted 2 December, 2019; v1 submitted 21 October, 2019;
originally announced October 2019.
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III-nitride on silicon electrically injected microrings for nanophotonic circuits
Authors:
Farsane Tabataba-Vakili,
Stéphanie Rennesson,
Benjamin Damilano,
Eric Frayssinet,
Jean-Yves Duboz,
Fabrice Semond,
Iannis Roland,
Bruno Paulillo,
Raffaele Colombelli,
Moustafa El Kurdi,
Xavier Checoury,
Sébastien Sauvage,
Laetitia Doyennette,
Christelle Brimont,
Thierry Guillet,
Bruno Gayral,
Philippe Boucaud
Abstract:
Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the goal of achieving electrically injected lasing. Using a c…
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Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the goal of achieving electrically injected lasing. Using a central buried n-contact to bypass the insulating buffer layers, we are able to underetch the microring, which is essential for maintaining vertical confinement in a thin disk. We demonstrate direct current room-temperature electroluminescence with 440 mW/cm$^2$ output power density at 20 mA from such microrings with diameters of 30 to 50 $μ$m. The first steps towards achieving an integrated photonic circuit are demonstrated.
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Submitted 5 April, 2019;
originally announced April 2019.
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Blue Microlasers Integrated on a Photonic Platform on Silicon
Authors:
Farsane Tabataba-Vakili,
Laetitia Doyennette,
Christelle Brimont,
Thierry Guillet,
Stéphanie Rennesson,
Eric Frayssinet,
Benjamin Damilano,
Jean-Yves Duboz,
Fabrice Semond,
Iannis Roland,
Moustafa El Kurdi,
Xavier Checoury,
Sébastien Sauvage,
Bruno Gayral,
Philippe Boucaud
Abstract:
The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers integrated on silicon and emitting in the blue spectral range is demonstrated. The active microdisks are side-coupled to suspended bus waveguides, and the coupled emission is guided and outcoupled to free space using grati…
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The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers integrated on silicon and emitting in the blue spectral range is demonstrated. The active microdisks are side-coupled to suspended bus waveguides, and the coupled emission is guided and outcoupled to free space using grating couplers. A small gap size of less than 100 nm between the disk and the waveguide is required in the blue spectral range for optimal evanescent coupling. To avoid reabsorption of the microdisk emission in the waveguide, the quantum wells are etched away from the waveguide. Under continuous-wave excitation, loaded quality factors greater than 2000 are observed for the whispering gallery modes for devices with small gaps and large waveguide bending angles. Under pulsed excitation conditions, lasing is evidenced for 3 $μ$m diameter microdisks integrated in a full photonic circuit. We thus present a first demonstration of a III-nitride microlaser coupled to a nanophotonic circuit.
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Submitted 5 April, 2019;
originally announced April 2019.
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Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities
Authors:
Farsane Tabataba-Vakili,
Iannis Roland,
Thi-Mo Tran,
Xavier Checoury,
Moustafa El Kurdi,
Sébastien Sauvage,
Christelle Brimont,
Thierry Guillet,
Stéphanie Rennesson,
Jean-Yves Duboz,
Fabrice Semond,
Bruno Gayral,
Philippe Boucaud
Abstract:
III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality factor with decreasing wavelength is investigated. Besides the quantum well absorption below 340 nm, a noteworthy contribution is attributed to the residual absorption present in thin AlN layers grown on silicon, as mea…
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III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality factor with decreasing wavelength is investigated. Besides the quantum well absorption below 340 nm, a noteworthy contribution is attributed to the residual absorption present in thin AlN layers grown on silicon, as measured by spectroscopic ellipsometry. This residual absorption ultimately limits the Q factor to around 2000 at 300 nm when no active layer is present.
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Submitted 5 April, 2019;
originally announced April 2019.
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High-performance and power-efficient 2${\times}$2 optical switch on Silicon-on-Insulator
Authors:
Zheng Han,
Gregory Moille,
Xavier Checoury,
Jérôme Bourderionnet,
Philippe Boucaud,
Alfredo De Rossi,
Sylvain Combrié
Abstract:
A compact (15μm${\times}$μm) and highly-optimized 2${\times}$2 optical switch is demonstrated on a CMOS-compatible photonic crystal technology. On-chip insertion loss are below 1dB, static and dynamic contrast are 40dB and >20dB respectively. Owing to efficient thermo-optic design, the power consumption is below 3 mW while the switching time is 1 μs.
A compact (15μm${\times}$μm) and highly-optimized 2${\times}$2 optical switch is demonstrated on a CMOS-compatible photonic crystal technology. On-chip insertion loss are below 1dB, static and dynamic contrast are 40dB and >20dB respectively. Owing to efficient thermo-optic design, the power consumption is below 3 mW while the switching time is 1 μs.
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Submitted 2 June, 2015;
originally announced June 2015.
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High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots
Authors:
Meletios Mexis,
Sylvain Sergent,
Thierry Guillet,
Christelle Brimont,
Thierry Bretagnon,
Bernard Gil,
Fabrice Semond,
Mathieu Leroux,
Delphine Néel,
Sylvain David,
X. Checoury,
Philippe Boucaud
Abstract:
We compare the quality factor values of the whispery gallery modes of microdisks incorporating GaN quantum dots (QDs) grown on AlN and AlGaN barriers by performing room temperature photoluminescence (PL) spectroscopy. The PL measurements show a large number of high Q factor (Q) resonant modes on the whole spectrum which allows us to identify the different radial mode families and to compare them w…
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We compare the quality factor values of the whispery gallery modes of microdisks incorporating GaN quantum dots (QDs) grown on AlN and AlGaN barriers by performing room temperature photoluminescence (PL) spectroscopy. The PL measurements show a large number of high Q factor (Q) resonant modes on the whole spectrum which allows us to identify the different radial mode families and to compare them with simulations. We report a considerable improvement of the Q factor which reflect the etching quality and the relatively low cavity loss by inserting QDs into the cavity. GaN/AlN QDs based microdisks show very high Q values (Q > 7000) whereas the Q factor is only up to 2000 in microdisks embedding QDs grown on AlGaN barrier layer. We attribute this difference to the lower absorption below bandgap for AlN barrier layers at the energies of our experimental investigation.
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Submitted 17 October, 2011; v1 submitted 11 January, 2011;
originally announced January 2011.
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Unidirectional band gaps in uniformly magnetized two-dimensional magnetophotonic crystals
Authors:
Mathias Vanwolleghem,
Xavier Checoury,
Wojciech Śmigaj,
Boris Gralak,
Liubov Magdenko,
Kamil Postava,
Béatrice Dagens,
Pierre Beauvillain,
Jean-Michel Lourtioz
Abstract:
By exploiting the concepts of magnetic group theory we show how unidirectional behavior can be obtained in two-dimensional magneto-photonic crystals (MOPhC) with uniform magnetization. This group theory approach generalizes all previous investigations of one-way MOPhCs including those based on the use of antiparallel magnetic domains in the elementary crystal cell. Here, the theoretical approach…
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By exploiting the concepts of magnetic group theory we show how unidirectional behavior can be obtained in two-dimensional magneto-photonic crystals (MOPhC) with uniform magnetization. This group theory approach generalizes all previous investigations of one-way MOPhCs including those based on the use of antiparallel magnetic domains in the elementary crystal cell. Here, the theoretical approach is illustrated for one MOPhC example where unidirectional behavior is obtained by appropriately lowering the geometrical symmetry of the elementary motifs. One-way transmission is numerically demonstrated for a photonic crystal slice.
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Submitted 22 June, 2009;
originally announced June 2009.
