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Probing photo-induced granular superconductivity in K$_{3}$C$_{60}$ thin films with an ultrafast on-chip voltmeter
Authors:
Joseph D. Adelinia,
Eryin Wang,
Mariana Chavez-Cervantes,
Toru Matsuyama,
Michael Fechner,
Michele Buzzi,
Guido Meier,
Andrea Cavalleri
Abstract:
The physics of optically-induced superconductivity remains poorly understood, with questions that range from the underlying microscopic mechanism to the macroscopic electrical response of the non-equilibrium phase. In this paper, we study optically-induced superconductivity in K$_{3}$C$_{60}$ thin films, which display signatures of granularity both in the equilibrium state below T$_{c}$ and in the…
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The physics of optically-induced superconductivity remains poorly understood, with questions that range from the underlying microscopic mechanism to the macroscopic electrical response of the non-equilibrium phase. In this paper, we study optically-induced superconductivity in K$_{3}$C$_{60}$ thin films, which display signatures of granularity both in the equilibrium state below T$_{c}$ and in the nonequilibrium photo-induced phase above T$_{c}$. Photo-conductive switches are used to measure the ultrafast voltage drop across a K$_{3}$C$_{60}$ film as a function of time after irradiation, both below and above T$_{c}$. These measurements reveal fast changes associated with the kinetic inductance of in-grain superconductivity, and a slower response attributed to the Josephson dynamics at the weak links. Fits to the data yield estimates of the in-grain photo-induced superfluid density after the drive and the dynamics of phase slips at the weak links. This work underscores the increasing ability to make electrical measurements at ultrafast speeds in optically-driven quantum materials, and demonstrates a striking new platform for optoelectronic device applications.
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Submitted 11 December, 2023;
originally announced December 2023.
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Nonlinear transport in a photo-induced superconductor
Authors:
E. Wang,
J. D. Adelinia,
M. Chavez-Cervantes,
T. Matsuyama,
M. Fechner,
M. Buzzi,
G. Meier,
A. Cavalleri
Abstract:
Optically driven quantum materials exhibit a variety of non-equilibrium functional phenomena [1-11], which are potentially associated with unique transport properties. However, these transient electrical responses have remained largely unexplored, primarily because of the challenges associated with integrating quantum materials into ultrafast electrical devices. Here, thin films of K3C60 grown by…
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Optically driven quantum materials exhibit a variety of non-equilibrium functional phenomena [1-11], which are potentially associated with unique transport properties. However, these transient electrical responses have remained largely unexplored, primarily because of the challenges associated with integrating quantum materials into ultrafast electrical devices. Here, thin films of K3C60 grown by Molecular Beam Epitaxy were connected by coplanar terahertz waveguides to a series of photo-conductive switches. This geometry enabled ultrafast transport measurements at high current densities, providing new information on the photo-induced phase created in the high temperature metal by mid-infrared excitation [12-16]. Nonlinearities in the current-voltage charactersitics of the transient state validate the assignment of transient superconductivity, and point to an inhomogeneous phase in which superconducting regions of the sample are connected by resistive weak links [17-23]. This work opens up the possibility of systematic transport measurements in driven quantum materials, both to probe their properties and to integrate them into ultrafast optoelectronic platforms.
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Submitted 16 January, 2023;
originally announced January 2023.
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On the survival of Floquet-Bloch states in the presence of scattering
Authors:
S. Aeschlimann,
S. A. Sato,
R. Krause,
M. Chávez-Cervantes,
U. De Giovannini,
H. Hübener,
S. Forti,
C. Coletti,
K. Hanff,
K. Rossnagel,
A. Rubio,
I. Gierz
Abstract:
Floquet theory has spawned many exciting possibilities for electronic structure control with light with enormous potential for future applications. The experimental realization in solids, however, largely remains pending. In particular, the influence of scattering on the formation of Floquet-Bloch states remains poorly understood. Here we combine time- and angle-resolved photoemission spectroscopy…
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Floquet theory has spawned many exciting possibilities for electronic structure control with light with enormous potential for future applications. The experimental realization in solids, however, largely remains pending. In particular, the influence of scattering on the formation of Floquet-Bloch states remains poorly understood. Here we combine time- and angle-resolved photoemission spectroscopy with time-dependent density functional theory and a two-level model with relaxation to investigate the survival of Floquet-Bloch states in the presence of scattering. We find that Floquet-Bloch states will be destroyed if scattering -- activated by electronic excitations -- prevents the Bloch electrons from following the driving field coherently. The two-level model also shows that Floquet-Bloch states reappear at high field intensities where energy exchange with the driving field dominates over energy dissipation to the bath. Our results clearly indicate the importance of long scattering times combined with strong driving fields for the successful realization of various Floquet phenomena.
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Submitted 25 February, 2021;
originally announced February 2021.
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Microscopic understanding of ultrafast charge transfer in van-der-Waals heterostructures
Authors:
R. Krause,
S. Aeschlimann,
M. Chavez-Cervantes,
R. Perea-Causin,
S. Brem,
E. Malic,
S. Forti,
F. Fabbri,
C. Coletti,
I. Gierz
Abstract:
Van-der-Waals heterostructures show many intriguing phenomena including ultrafast charge separation following strong excitonic absorption in the visible spectral range. However, despite the enormous potential for future applications in the field of optoelectronics, the underlying microscopic mechanism remains controversial. Here we use time- and angle-resolved photoemission spectroscopy combined w…
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Van-der-Waals heterostructures show many intriguing phenomena including ultrafast charge separation following strong excitonic absorption in the visible spectral range. However, despite the enormous potential for future applications in the field of optoelectronics, the underlying microscopic mechanism remains controversial. Here we use time- and angle-resolved photoemission spectroscopy combined with microscopic many-particle theory to reveal the relevant microscopic charge transfer channels in epitaxial WS$_2$/graphene heterostructures. We find that the timescale for efficient ultrafast charge separation in the material is determined by direct tunneling at those points in the Brillouin zone where WS$_2$ and graphene bands cross, while the lifetime of the charge separated transient state is set by defect-assisted tunneling through localized sulphur vacanices. The subtle interplay of intrinsic and defect-related charge transfer channels revealed in the present work can be exploited for the design of highly efficient light harvesting and detecting devices.
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Submitted 16 December, 2020;
originally announced December 2020.
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Direct evidence for efficient ultrafast charge separation in epitaxial WS$_2$/graphene heterostructure
Authors:
S. Aeschlimann,
A. Rossi,
M. Chávez-Cervantes,
R. Krause,
B. Arnoldi,
B. Stadtmüller,
M. Aeschlimann,
S. Forti,
F. Fabbri,
C. Coletti,
I. Gierz
Abstract:
We use time- and angle-resolved photoemission spectroscopy (tr-ARPES) to investigate ultrafast charge transfer in an epitaxial heterostructure made of monolayer WS$_2$ and graphene. This heterostructure combines the benefits of a direct gap semiconductor with strong spin-orbit coupling and strong light-matter interaction with those of a semimetal hosting massless carriers with extremely high mobil…
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We use time- and angle-resolved photoemission spectroscopy (tr-ARPES) to investigate ultrafast charge transfer in an epitaxial heterostructure made of monolayer WS$_2$ and graphene. This heterostructure combines the benefits of a direct gap semiconductor with strong spin-orbit coupling and strong light-matter interaction with those of a semimetal hosting massless carriers with extremely high mobility and long spin lifetimes. We find that, after photoexcitation at resonance to the A-exciton in WS$_2$, the photoexcited holes rapidly transfer into the graphene layer while the photoexcited electrons remain in the WS$_2$ layer. The resulting charge transfer state is found to have a lifetime of $\sim1$\,ps. We attribute our findings to differences in scattering phase space caused by the relative alignment of WS$_2$ and graphene bands as revealed by high resolution ARPES. In combination with spin-selective excitation using circularly polarized light the investigated WS$_2$/graphene heterostructure might provide a new platform for efficient optical spin injection into graphene.
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Submitted 2 April, 2019;
originally announced April 2019.
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Charge density wave melting in one-dimensional wires with femtosecond sub-gap excitation
Authors:
M. Chávez-Cervantes,
G. E. Topp,
S. Aeschlimann,
R. Krause,
S. A. Sato,
M. A. Sentef,
I. Gierz
Abstract:
Charge density waves (CDWs) are symmetry-broken ground states that commonly occur in low-dimensional metals due to strong electron-electron and/or electron-phonon coupling. The non-equilibrium carrier distribution established via photodo** with femtosecond laser pulses readily quenches these ground states and induces an ultrafast insulator-to-metal phase transition. To date, CDW melting has been…
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Charge density waves (CDWs) are symmetry-broken ground states that commonly occur in low-dimensional metals due to strong electron-electron and/or electron-phonon coupling. The non-equilibrium carrier distribution established via photodo** with femtosecond laser pulses readily quenches these ground states and induces an ultrafast insulator-to-metal phase transition. To date, CDW melting has been mainly investigated in the single-photon and tunneling regimes, while the intermediate multi-photon regime has received little attention. Here we excite one-dimensional indium wires with a CDW gap of ~300meV with mid-infrared pulses at 190meV with MV/cm field strength and probe the transient electronic structure with time- and angle-resolved photoemission spectroscopy (tr-ARPES). We find that the CDW gap is filled on a timescale short compared to our temporal resolution of 300fs and that the phase transition is completed within ~1ps. Supported by a minimal theoretical model we attribute our findings to multi-photon absorption across the CDW gap.
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Submitted 23 October, 2018;
originally announced October 2018.
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Band Structure Dynamics in Indium Wires
Authors:
M. Chávez-Cervantes,
R. Krause,
S. Aeschlimann,
I. Gierz
Abstract:
One-dimensional Indium wires grown on Si(111) substrates, which are metallic at high temperatures, become insulating below $\sim100$ K due to the formation of a Charge Density Wave (CDW). The physics of this transition is not conventional and involves a multiband Peierls instability with strong interband coupling. This CDW ground state is readily destroyed with femtosecond laser pulses resulting i…
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One-dimensional Indium wires grown on Si(111) substrates, which are metallic at high temperatures, become insulating below $\sim100$ K due to the formation of a Charge Density Wave (CDW). The physics of this transition is not conventional and involves a multiband Peierls instability with strong interband coupling. This CDW ground state is readily destroyed with femtosecond laser pulses resulting in a light-induced insulator-to-metal phase transition. The current understanding of this transition remains incomplete, requiring measurements of the transient electronic structure to complement previous investigations of the lattice dynamics. Time- and angle-resolved photo\-emission spectroscopy with extreme ultra-violet radiation is applied to this end. We find that the transition from the insulating to the metallic band structure occurs within $\sim660$ fs that is a fraction of the amplitude mode period. The long life time of the transient state ($>100$ ps) is attributed to trap** in a metastable state in accordance with previous work.
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Submitted 21 April, 2018; v1 submitted 14 March, 2018;
originally announced March 2018.
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Ultrafast Momentum Imaging of Pseudospin-Flip Excitations in Graphene
Authors:
S. Aeschlimann,
R. Krause,
M. Chávez-Cervantes,
H. Bromberger,
A. Al-Temimy,
C. Coletti,
A. Cavalleri,
I. Gierz
Abstract:
The pseudospin of Dirac electrons in graphene manifests itself in a peculiar momentum anisotropy for photo-excited electron-hole pairs. These interband excitations are in fact forbidden along the direction of the light polarization, and are maximum perpendicular to it. Here, we use time- and angle-resolved photoemission spectroscopy to investigate the resulting unconventional hot carrier dynamics,…
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The pseudospin of Dirac electrons in graphene manifests itself in a peculiar momentum anisotropy for photo-excited electron-hole pairs. These interband excitations are in fact forbidden along the direction of the light polarization, and are maximum perpendicular to it. Here, we use time- and angle-resolved photoemission spectroscopy to investigate the resulting unconventional hot carrier dynamics, sampling carrier distributions as a function of energy and in-plane momentum. We first show that the rapidly-established quasi-thermal electron distribution initially exhibits an azimuth-dependent temperature, consistent with relaxation through collinear electron-electron scattering. Azimuthal thermalization is found to occur only at longer time delays, at a rate that depends on the substrate and the static do** level. Further, we observe pronounced differences in the electron and hole dynamics in n-doped samples. By simulating the Coulomb- and phonon-mediated carrier dynamics we are able to disentangle the influence of excitation fluence, screening, and do**, and develop a microscopic picture of the carrier dynamics in photo-excited graphene. Our results clarify new aspects of hot carrier dynamics that are unique to Dirac materials, with relevance for photo-control experiments and optoelectronic device applications.
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Submitted 20 June, 2017; v1 submitted 23 January, 2017;
originally announced January 2017.
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Angle-resolved photoemission spectroscopy with 9-eV photon-energy pulses generated in a gas-filled hollow-core photonic crystal fiber
Authors:
H. Bromberger,
A. Ermolov,
F. Belli,
H. Liu,
F. Calegari,
M. Chavez-Cervantes,
M. T. Li,
C. T. Lin,
A. Abdolvand,
P. St. J. Russell,
A. Cavalleri,
J. C. Travers,
I. Gierz
Abstract:
A recently developed source of ultraviolet radiation, based on optical soliton propagation in a gas-filled hollow-core photonic crystal fiber, is applied here to angle-resolved photoemission spectroscopy (ARPES). Near-infrared femtosecond pulses of only few μJ energy generate vacuum ultraviolet (VUV) radiation between 5.5 and 9 eV inside the gas-filled fiber. These pulses are used to measure the b…
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A recently developed source of ultraviolet radiation, based on optical soliton propagation in a gas-filled hollow-core photonic crystal fiber, is applied here to angle-resolved photoemission spectroscopy (ARPES). Near-infrared femtosecond pulses of only few μJ energy generate vacuum ultraviolet (VUV) radiation between 5.5 and 9 eV inside the gas-filled fiber. These pulses are used to measure the band structure of the topological insulator Bi2Se3 with a signal to noise ratio comparable to that obtained with high order harmonics from a gas jet. The two-order-of-magnitude gain in efficiency promises time-resolved ARPES measurements at repetition rates of hundreds of kHz or even MHz, with photon energies that cover the first Brillouin zone of most materials.
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Submitted 28 April, 2015;
originally announced April 2015.
