Two-Level Systems in Nucleated and Non-Nucleated Epitaxial alpha-Tantalum films
Authors:
L. D. Alegria,
D. M. Tennant,
K. R. Chaves,
J. R. I. Lee,
S. R. O'Kelley,
Y. J. Rosen,
J L DuBois
Abstract:
Building usefully coherent superconducting quantum processors depends on reducing losses in their constituent materials. Tantalum, like niobium, has proven utility as the primary superconducting layer within highly coherent qubits. But, unlike Nb, high temperatures are typically used to stabilize the desirable body-centered-cubic phase, alpha-Ta, during thin film deposition. It has long been known…
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Building usefully coherent superconducting quantum processors depends on reducing losses in their constituent materials. Tantalum, like niobium, has proven utility as the primary superconducting layer within highly coherent qubits. But, unlike Nb, high temperatures are typically used to stabilize the desirable body-centered-cubic phase, alpha-Ta, during thin film deposition. It has long been known that a thin Nb layer permits the room-temperature nucleation of alpha-Ta, although neither an epitaxial process nor few-photon microwave loss measurements have been reported for Nb-nucleated Ta films prior to this study. We compare resonators patterned from Ta films grown at high temperature (500 °C) and films nucleated at room temperature, in order to understand the impact of crystalline order on quantum coherence. In both cases, films grew with Al2O3 (001) || Ta (110) indicating that the epitaxial orientation is independent of temperature and is preserved across the Nb/Ta interface. We use conventional low-power spectroscopy to measure two level system (TLS) loss, as well as an electric-field bias technique to measure the effective dipole moments of TLS in the surfaces of resonators. In our measurements, Nb-nucleated Ta resonators had greater loss tangent (1.5 +/- 0.1 x 10^-5) than non-nucleated (5 +/- 1 x 10^-6) in approximate proportion to defect densities as characterized by X-ray diffraction (0.27 ° vs 0.18 ° [110] reflection width) and electron microscopy (30 nm vs 70 nm domain size). The dependence of the loss tangent on domain size indicates that the development of more ordered Ta films is likely to lead to improvements in qubit coherence times. Moreover, low-temperature alpha-Ta epitaxy may enable the growth of new, microstate-free heterostructures which would not withstand high temperature processing.
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Submitted 18 September, 2023; v1 submitted 24 January, 2023;
originally announced January 2023.
Nonlinear Signal Distortion Corrections Through Quantum Sensing
Authors:
Kevin R. Chaves,
Xian Wu,
Yaniv J. Rosen,
Jonathan L DuBois
Abstract:
Having accurate gate generation is essential for precise control of a quantum system. The generated gate usually suffers from linear and nonlinear distortion. Previous works have demonstrated how to use a qubit to correct linear frequency distortions but have not commented on how to handle nonlinear distortions. This is an important issue as we show that nonlinear amplitude distortions from the RF…
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Having accurate gate generation is essential for precise control of a quantum system. The generated gate usually suffers from linear and nonlinear distortion. Previous works have demonstrated how to use a qubit to correct linear frequency distortions but have not commented on how to handle nonlinear distortions. This is an important issue as we show that nonlinear amplitude distortions from the RF electronics can affect Rabi pulses by as much as 10%. We present work that demonstrates how a transmon qubit can be used as a highly sensitive cryogenic detector to characterize these nonlinear amplitude distortions. We show that a correction can drive these errors down to <1% over a 700 MHz range. This correction technique provides a method to minimize the effects of signal distortions and can be easily applied to broadband control pulses to produce higher fidelity arbitrary quantum gates.
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Submitted 27 October, 2020;
originally announced October 2020.
