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High Resolution Study of $^{40}$Ca to Constrain Potassium Nucleosynthesis in NGC 2419
Authors:
William Fox,
Richard Longland,
Caleb Marshall,
Federico Portillo Chaves
Abstract:
The globular cluster NGC 2419 was the first to exhibit a Mg-K anticorrelation, linked to hydrogen burning at temperatures between 80-260 MK. However, the key K-destroying reaction, $^{39}\mathrm{K}(p,γ)^{40}\mathrm{Ca}$, has a large rate uncertainty in this range. We significantly constrain this rate with a high resolution $^{39}\mathrm{K}(^{3}\mathrm{He},d)^{40}\mathrm{Ca}$ study. We resolve the…
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The globular cluster NGC 2419 was the first to exhibit a Mg-K anticorrelation, linked to hydrogen burning at temperatures between 80-260 MK. However, the key K-destroying reaction, $^{39}\mathrm{K}(p,γ)^{40}\mathrm{Ca}$, has a large rate uncertainty in this range. We significantly constrain this rate with a high resolution $^{39}\mathrm{K}(^{3}\mathrm{He},d)^{40}\mathrm{Ca}$ study. We resolve the E$_{\text{r}}^{\text{c.m.}} = 154$ keV resonance in $^{39}\mathrm{K}+p$ for the first time, increasing the previous rate by up to a factor 13 and reducing its $1σ$ width by up to a factor of 42. Reaction network calculations for NGC 2419 suggest that this could lower temperatures needed to reproduce the Mg-K anticorrelation.
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Submitted 12 January, 2024;
originally announced January 2024.
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New Constraints on Sodium Production in Globular Clusters From the $^{23}$Na$(^3$He$, \textbf{d})^{24}$Mg Reaction
Authors:
C. Marshall,
K. Setoodehnia,
G. C. Cinquegrana,
J. H. Kelly,
F. Portillo Chaves,
A. Karakas,
R. Longland
Abstract:
The star to star anticorrelation of sodium and oxygen {is} a defining feature of globular clusters, but, to date, the astrophysical site responsible for this unique chemical signature remains unknown. Sodium enrichment within these clusters depends sensitively on reaction rate of the sodium destroying reactions $^{23}$Na$(p, γ)$ and $^{23}$Na$(p, α)$. In this paper, we report the results of a…
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The star to star anticorrelation of sodium and oxygen {is} a defining feature of globular clusters, but, to date, the astrophysical site responsible for this unique chemical signature remains unknown. Sodium enrichment within these clusters depends sensitively on reaction rate of the sodium destroying reactions $^{23}$Na$(p, γ)$ and $^{23}$Na$(p, α)$. In this paper, we report the results of a $^{23}$Na$(^3\text{He}, d)^{24}$Mg transfer reaction carried out at Triangle Universities Nuclear Laboratory using a $21$ MeV $^3$He beam. Astrophysically relevant states {in $^{24}$Mg} between $11 < E_x < 12$ MeV were studied using high resolution magnetic spectroscopy, thereby allowing the extraction of excitation energies and spectroscopic factors. Bayesian methods are combined with the distorted wave Born approximation to assign statistically meaningful uncertainties to the extracted spectroscopic factors. For the first time, these uncertainties are propagated through to the estimation of proton partial widths. Our experimental data are used to calculate the reaction rate. The impact of the new rates are investigated using asymptotic giant branch star models. It is found that while the astrophysical conditions still dominate the total uncertainty, intra-model variations on sodium production from the $^{23}$Na$(p, γ)$ and $^{23}$Na$(p, α)$ reaction channels are a lingering source of uncertainty.
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Submitted 10 March, 2023;
originally announced March 2023.
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Gate Tunable Lateral 2D pn Junctions: An Analytical Study of Its Electrostatics
Authors:
Ferney A. Chaves,
Anibal Pacheco-Sanchez,
David Jimenez
Abstract:
The electrostatics of two-dimensional (2D) lateral pn homojunctions considering the impact of electrostatic do** by means of two split bottom-gates are studied here. Analytical expressions are obtained from the solution of the 2D Poisson equation considering a depletion approximation. Straightforward analytical models for the electrostatic potential and the depletion width within both the dielec…
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The electrostatics of two-dimensional (2D) lateral pn homojunctions considering the impact of electrostatic do** by means of two split bottom-gates are studied here. Analytical expressions are obtained from the solution of the 2D Poisson equation considering a depletion approximation. Straightforward analytical models for the electrostatic potential and the depletion width within both the dielectric and the 2D semiconductor are obtained for both the symmetrical and asymmetrical cases. In contrast to the case of devices with chemical do**, the obtained depletion width model of devices with electrostatic do** do not depend on the dielectric constant but only on the electrostatic potential and oxide thickness. The models describe the electrostatics of gate-tunable 2D pn junctions at arbitrary bias. A benchmark against numerical device simulations of MoS2-based pn junctions validate the analytical models.
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Submitted 30 January, 2023;
originally announced February 2023.
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Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors
Authors:
Francisco Pasadas,
Pedro C. Feijoo,
Nikolaos Mavredakis,
Aníbal Pacheco-Sanchez,
Ferney A. Chaves,
David Jiménez
Abstract:
In this study, we report the progress made towards the definition of a modular compact modeling technology for graphene field-effect transistors (GFET) that enables the electrical analysis of arbitrary GFET-based integrated circuits. A set of primary models embracing the main physical principles defines the ideal GFET response under DC, transient (time domain), AC (frequency domain), and noise (fr…
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In this study, we report the progress made towards the definition of a modular compact modeling technology for graphene field-effect transistors (GFET) that enables the electrical analysis of arbitrary GFET-based integrated circuits. A set of primary models embracing the main physical principles defines the ideal GFET response under DC, transient (time domain), AC (frequency domain), and noise (frequency domain) analysis. Other set of secondary models accounts for the GFET non-idealities, such as extrinsic-, short-channel-, trap**/detrap**-, self-heating-, and non-quasi static-effects, which could have a significant impact under static and/or dynamic operation. At both device and circuit levels, significant consistency is demonstrated between the simulation output and experimental data for relevant operating conditions. Additionally, we provide a perspective of the challenges during the scale up of the GFET modeling technology towards higher technology readiness levels while drawing a collaborative scenario among fabrication technology groups, modeling groups, and circuit designers.
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Submitted 1 September, 2022;
originally announced September 2022.
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The impact of $^{17}$O$+α$ reaction rate uncertainties on the s-process in rotating massive stars
Authors:
J. Frost-Schenk,
P. Adsley,
A. M. Laird,
R. Longland,
C. Angus,
C. Barton,
A. Choplin,
C. Aa. Diget,
R. Hirschi,
C. Marshall,
F. Portillo Chaves,
K. Setoodehnia
Abstract:
Massive stars are crucial to galactic chemical evolution for elements heavier than iron. Their contribution at early times in the evolution of the Universe, however, is unclear due to poorly constrained nuclear reaction rates. The competing $^{17}$O($α,γ$)$^{21}$Ne and $^{17}$O($α,n$)$^{20}$Ne reactions strongly impact weak s-process yields from rotating massive stars at low metallicities. Abundan…
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Massive stars are crucial to galactic chemical evolution for elements heavier than iron. Their contribution at early times in the evolution of the Universe, however, is unclear due to poorly constrained nuclear reaction rates. The competing $^{17}$O($α,γ$)$^{21}$Ne and $^{17}$O($α,n$)$^{20}$Ne reactions strongly impact weak s-process yields from rotating massive stars at low metallicities. Abundant $^{16}$O absorbs neutrons, removing flux from the s-process, and producing $^{17}$O. The $^{17}$O($α,n$)$^{20}$Ne reaction releases neutrons, allowing continued s-process nucleosynthesis, if the $^{17}$O($α,γ$)$^{21}$Ne reaction is sufficiently weak. While published rates are available, they are based on limited indirect experimental data for the relevant temperatures and, more importantly, no uncertainties are provided. The available nuclear physics has been evaluated, and combined with data from a new study of astrophysically relevant $^{21}$Ne states using the $^{20}$Ne($d,p$)$^{21}$Ne reaction. Constraints are placed on the ratio of the ($α,n$)/($α,γ$) reaction rates with uncertainties on the rates provided for the first time. The new rates favour the ($α,n$) reaction and suggest that the weak s-process in rotating low-metallicity stars is likely to continue up to barium and, within the computed uncertainties, even to lead.
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Submitted 8 June, 2022;
originally announced June 2022.
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The gate tunable 2D pn junction driven out-of-equilibrium
Authors:
Ferney A. Chaves,
David Jiménez
Abstract:
We have investigated the electrostatics and electronic transport of the gate tunable 2D pn junction by implementing a comprehensive physics-based simulator that self-consistently solves the 2D Poisson's equation coupled to the drift-diffusion current and continuity equations. The simulator considers the strong influence of the out-of-plane electric field through the gate dielectric and the presenc…
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We have investigated the electrostatics and electronic transport of the gate tunable 2D pn junction by implementing a comprehensive physics-based simulator that self-consistently solves the 2D Poisson's equation coupled to the drift-diffusion current and continuity equations. The simulator considers the strong influence of the out-of-plane electric field through the gate dielectric and the presence of interface states. The impact of parameters such as gate capacitance, energy gap and interface trap states density have been considered to model properties such as the depletion width, rectification factor and depletion and diffusion capacitances. The present work opens the door to a wider exploration of potential advantages that gate tunable 2D pn junctions could bring in terms of figures of merit.
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Submitted 21 October, 2021;
originally announced October 2021.
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Holonomy and equivalence of analytic foliations
Authors:
Francisco Chaves
Abstract:
The main goal of this paper is the analytic classification of the germs of singular foliations generated, up to an analytic change of coordinates, by the germs of vector fields of form the $x\partial_x+\sum_{i=1}^{n}a_i(x,\mathbf{z})\partial_{z_i}$, where $a_i(x,\mathbf{z})$ is a germ of analytic function with $a_i(x,0)=0$. We focus on the connection with the conjugation of the holonomies related…
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The main goal of this paper is the analytic classification of the germs of singular foliations generated, up to an analytic change of coordinates, by the germs of vector fields of form the $x\partial_x+\sum_{i=1}^{n}a_i(x,\mathbf{z})\partial_{z_i}$, where $a_i(x,\mathbf{z})$ is a germ of analytic function with $a_i(x,0)=0$. We focus on the connection with the conjugation of the holonomies related to them. We prove, under some hypothesis, that these germs of singular foliations are analytically classified once their local holonomy along a given separatrix are analytically conjugated.
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Submitted 9 April, 2021; v1 submitted 7 December, 2020;
originally announced December 2020.
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The 2D pn Junction Driven Out-of-Equilibrium
Authors:
Ferney A. Chaves,
Pedro C. Feijoo,
David Jiménez
Abstract:
The pn junction is a fundamental electrical component in modern electronics and optoelectronics. Currently, there is a great deal of interest in the two-dimensional (2D) pn junction. Although many experiments have demonstrated the working principle, there is a lack of fundamental understanding of its basic properties and expected performances, in particular when the device is driven out of equilib…
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The pn junction is a fundamental electrical component in modern electronics and optoelectronics. Currently, there is a great deal of interest in the two-dimensional (2D) pn junction. Although many experiments have demonstrated the working principle, there is a lack of fundamental understanding of its basic properties and expected performances, in particular when the device is driven out of equilibrium. To fill the current gap in understanding, we investigate the electrostatics and electronic transport of 2D lateral pn junctions. To do so we implement a physics-based simulator that selfconsistently solves the 2D Poisson's equation coupled to the drift-diffusion and continuity equations. Notably, the simulator takes into account the strong influence of the out of plane electric field through the surrounding dielectric, capturing the weak screening of charge carriers. Supported by simulations, we propose a Shockley-like equation for the ideal current voltage characteristics, in full analogy to the bulk junction after defining an effective depletion layer (EDL). We also discuss the impact of recombination generation processes inside the EDL, which actually produce a significant deviation with respect to the ideal behavior, consistently with experimental data. Moreover, we analyze the capacitances and conductance of the 2D lateral pn junction. Based on its equivalent circuit we investigate its cut-off frequency targeting RF applications. To gain deeper insight into the role played by material dimensionality, we benchmark the performances of single-layer MoS2 (2D) lateral pn junctions against those of the Si (3D) junction. Finally, a practical discussion on the short length 2D junction case together with the expected impact of interface states has been provided. Given the available list of 2D materials, this work opens the door to a wider exploration of material dependent performances.
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Submitted 6 July, 2020; v1 submitted 18 March, 2020;
originally announced March 2020.
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Electrostatics of metal-graphene interfaces: sharp p-n junctions for electron-optical applications
Authors:
Ferney A. Chaves,
David Jimenez,
Jaime E. Santos,
Peter Boggild,
Jose M. Caridad
Abstract:
Creation of sharp lateral p-n junctions in graphene devices, with transition widths well below the Fermi wavelength of graphene charge carriers, is vital to study and exploit these electronic systems for electron-optical applications. The achievement of such junctions is, however, not trivial due to the presence of a considerable out-of-plane electric field in lateral p-n junctions, resulting in l…
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Creation of sharp lateral p-n junctions in graphene devices, with transition widths well below the Fermi wavelength of graphene charge carriers, is vital to study and exploit these electronic systems for electron-optical applications. The achievement of such junctions is, however, not trivial due to the presence of a considerable out-of-plane electric field in lateral p-n junctions, resulting in large widths. Metal-graphene interfaces represent a novel, promising and easy to implement technique to engineer such sharp lateral p-n junctions in graphene field-effect devices, in clear contrast to the much wider (i.e. smooth) junctions achieved via conventional local gating. In this work, we present a systematic and robust investigation of the electrostatic problem of metal-induced lateral p-n junctions in gated graphene devices for electron-optics applications, systems where the width of the created junctions is not only determined by the metal used but also depends on external factors such as device geometries, dielectric environment and different operational parameters such as carrier density and temperature. Our calculations demonstrate that sharp junctions can be achieved via metal-graphene interfaces at room temperature in devices surrounded by dielectric media with low relative permittivity. In addition, we show how specific details such as the separation distance between metal and graphene and the permittivity of the gap in-between plays a critical role when defining the p-n junction, not only defining its width w but also the energy shift of graphene underneath the metal. These results can be extended to any two-dimensional (2D) electronic system doped by the presence of metal clusters and thus are relevant for understanding interfaces between metals and other 2D materials.
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Submitted 15 November, 2019;
originally announced November 2019.
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A study of $^{35}$Cl excited states via $^{32}$S($α, p$)
Authors:
Kiana Setoodehnia,
John H. Kelley,
Caleb Marshall,
Federico Portillo Chaves,
Richard Longland
Abstract:
Presolar grains originating in oxygen-neon novae may be identified by their sulfur isotopic ratios compared with theoretical estimates. These ratios depend on reliable $^{33}$S($p, γ$)$^{34}$Cl and $^{34}$S($p, γ$)$^{35}$Cl reaction rates. The latter rate has recently been computed based on experimental input, and many new excited states in $^{35}$Cl were discovered above the proton threshold. The…
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Presolar grains originating in oxygen-neon novae may be identified by their sulfur isotopic ratios compared with theoretical estimates. These ratios depend on reliable $^{33}$S($p, γ$)$^{34}$Cl and $^{34}$S($p, γ$)$^{35}$Cl reaction rates. The latter rate has recently been computed based on experimental input, and many new excited states in $^{35}$Cl were discovered above the proton threshold. The experimental $^{34}$S($p, γ$)$^{35}$Cl rate was found to be 2 - 5 times smaller than the theoretical one, and the simulated $^{34}$S/$^{32}$S isotopic ratio for nova presolar grains was thus predicted to be smaller than that of type II supernova grains by up to a factor of 3.7. The present study was performed to confirm the existence of these new resonances, and to improve the remaining uncertainties in the $^{34}$S($p, γ$)$^{35}$Cl reaction rate. Energies and spin-parities of the $^{35}$Cl excited levels were investigated with an Enge split-pole spectrograph using the $^{32}$S($α, p$)$^{35}$Cl reaction. Differential cross sections of the outgoing protons were measured at $E_α$ = 21 MeV. The existence of the newly discovered states are largely confirmed, although a few states were not observed in this study. The spins and parities of several $^{35}$Cl states were assigned tentatively for the first time. The present $^{34}$S($p, γ$)$^{35}$Cl experimental thermonuclear reaction rate is consistent within 1$σ$ with the previous evaluation. However, our rate uncertainty is larger due to a more realistic treatment of the experimental uncertainties. The uncertainty in the present rate is up to a factor of 3.5 at nova temperatures. We recommend future work to focus on the unknown properties of four excited states of $^{35}$Cl at 6643 keV, 6761 keV, 6780 keV, and 6800 keV.
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Submitted 21 May, 2019;
originally announced May 2019.
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Document classification using a Bi-LSTM to unclog Brazil's supreme court
Authors:
Fabricio Ataides Braz,
Nilton Correia da Silva,
Teofilo Emidio de Campos,
Felipe Borges S. Chaves,
Marcelo H. S. Ferreira,
Pedro Henrique Inazawa,
Victor H. D. Coelho,
Bernardo Pablo Sukiennik,
Ana Paula Goncalves Soares de Almeida,
Flavio Barros Vidal,
Davi Alves Bezerra,
Davi B. Gusmao,
Gabriel G. Ziegler,
Ricardo V. C. Fernandes,
Roberta Zumblick,
Fabiano Hartmann Peixoto
Abstract:
The Brazilian court system is currently the most clogged up judiciary system in the world. Thousands of lawsuit cases reach the supreme court every day. These cases need to be analyzed in order to be associated to relevant tags and allocated to the right team. Most of the cases reach the court as raster scanned documents with widely variable levels of quality. One of the first steps for the analys…
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The Brazilian court system is currently the most clogged up judiciary system in the world. Thousands of lawsuit cases reach the supreme court every day. These cases need to be analyzed in order to be associated to relevant tags and allocated to the right team. Most of the cases reach the court as raster scanned documents with widely variable levels of quality. One of the first steps for the analysis is to classify these documents. In this paper we present a Bidirectional Long Short-Term Memory network (Bi-LSTM) to classify these pieces of legal document.
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Submitted 27 November, 2018;
originally announced November 2018.
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Excited states of $^{39}$Ca and their significance in nova nucleosynthesis
Authors:
Kiana Setoodehnia,
Caleb Marshall,
Richard Longland,
John H. Kelley,
Johnson Liang,
Federico Portillo Chaves
Abstract:
Background: Discrepancies exist between the observed abundances of argon and calcium in oxygen-neon nova ejecta and those predicted by nova models. An improved characterization of the $^{38}$K($p, γ$)$^{39}$Ca reaction rate over the nova temperature regime ($\sim$ 0.1 -- 0.4 GK), and thus the nuclear structure of $^{39}$Ca above the proton threshold (5770.92(63) keV), is necessary to resolve these…
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Background: Discrepancies exist between the observed abundances of argon and calcium in oxygen-neon nova ejecta and those predicted by nova models. An improved characterization of the $^{38}$K($p, γ$)$^{39}$Ca reaction rate over the nova temperature regime ($\sim$ 0.1 -- 0.4 GK), and thus the nuclear structure of $^{39}$Ca above the proton threshold (5770.92(63) keV), is necessary to resolve these contradictions.
Purpose: The present study was performed to search for low-spin proton resonances in the $^{38}$K $+$ $p$ system, and to improve the uncertainties in energies of the known astrophysically significant proton resonances in $^{39}$Ca.
Method: The level structure of $^{39}$Ca was investigated via high-resolution charged-particle spectroscopy with an Enge split-pole spectrograph using the $^{40}$Ca($^{3}$He, $α$)$^{39}$Ca reaction. Differential cross sections were measured over 6 laboratory angles at 21 MeV. Distorted-wave Born approximation calculations were performed to constrain the spin-parity assignments of observed levels with special attention to those significant in determination of the $^{38}$K($p, γ$)$^{39}$Ca reaction rate over the nova temperature regime.
Results: The resonance energies corresponding to two out of three astrophysically important states at 6154(5) and 6472.2(24) keV are measured with better precision than previous charged-particle spectroscopy measurements. A tentatively new state is discovered at 5908(3) keV. The spin-parity assignments of a few of the astrophysically important resonances are determined.
Conclusions: The present $^{38}$K($p, γ$)$^{39}$Ca upper limit thermonuclear reaction rate at 0.1 -- 0.4 GK is higher than that determined in [Physical Review C 97 (2018) 025802] by at most a factor of 1.4 at 0.1 GK.
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Submitted 1 November, 2018;
originally announced November 2018.
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von Mises Tapering: A Circular Data Windowing
Authors:
H. M. de Oliveira,
F. Chaves
Abstract:
Continuous standard windowing is revisited and a new taper shape is introduced, which is based on the normal circular distribution by von Mises. Continuous-time windows are considered and their spectra obtained. A brief comparison with classical window families is performed in terms of their spectral properties. These windows can be used as an alternative in spectral analysis.
Continuous standard windowing is revisited and a new taper shape is introduced, which is based on the normal circular distribution by von Mises. Continuous-time windows are considered and their spectra obtained. A brief comparison with classical window families is performed in terms of their spectral properties. These windows can be used as an alternative in spectral analysis.
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Submitted 26 June, 2018;
originally announced June 2018.
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Electrostatics of Two-Dimensional Lateral Junctions
Authors:
Ferney A. Chaves,
David Jiménez
Abstract:
The increasing technological control of two-dimensional materials has allowed the demonstration of 2D lateral junctions, which display unique properties that might serve as the basis for a new generation of 2D electronic and optoelectronic devices. Notably, the chemically doped MoS$_2$ homojunction, the WSe$_2$-MoS$_2$ monolayer and MoS$_2$ monolayer/multilayer heterojunctions, have been demonstra…
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The increasing technological control of two-dimensional materials has allowed the demonstration of 2D lateral junctions, which display unique properties that might serve as the basis for a new generation of 2D electronic and optoelectronic devices. Notably, the chemically doped MoS$_2$ homojunction, the WSe$_2$-MoS$_2$ monolayer and MoS$_2$ monolayer/multilayer heterojunctions, have been demonstrated. Here we report the investigation of 2D lateral junction electrostatics, which differs from the bulk case because of the weaker screening, producing a much longer transition region between the space charge region and the quasi-neutral region, making inappropriate the use of the complete-depletion approximation. For such a purpose we have developed a method based on the conformal map** technique to solve the 2D electrostatics, which is widely applicable to every kind of junctions, giving accurate results for even large asymmetric charge distribution scenarios.
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Submitted 27 March, 2019; v1 submitted 13 February, 2018;
originally announced February 2018.
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The role of the Fermi level pinning in gate tunable graphene-semiconductor junctions
Authors:
Ferney A. Chaves,
David Jiménez
Abstract:
Graphene based transistors relying on a conventional structure cannot switch properly because of the absence of an energy gap in graphene. To overcome this limitation, a barristor device was proposed, whose operation is based on the modulation of the graphene-semiconductor (GS) Schottky barrier by means of a top gate, and demonstrating an ON-OFF current ratio up to $10^5$. Such a large number is l…
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Graphene based transistors relying on a conventional structure cannot switch properly because of the absence of an energy gap in graphene. To overcome this limitation, a barristor device was proposed, whose operation is based on the modulation of the graphene-semiconductor (GS) Schottky barrier by means of a top gate, and demonstrating an ON-OFF current ratio up to $10^5$. Such a large number is likely due to the realization of an ultra clean interface with virtually no interface trapped charge. However, it is indeed technologically relevant to know the impact that the interface trapped charges might have on the barristor's electrical properties. We have developed a physics based model of the gate tunable GS heterostructure where non-idealities such as Fermi Level Pinning (FLP) and a "bias dependent barrier lowering effect" has been considered. Using the model we have made a comprehensive study of the barristor's expected digital performance.
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Submitted 5 September, 2016;
originally announced September 2016.
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A physics based model of gate tunable metal-graphene contact resistance benchmarked against experimental data
Authors:
Ferney A. Chaves,
David Jiménez,
Abhay A. Sagade,
Wonjae Kim,
Juha Riikonen,
Harri Lipsanen,
Daniel Neumaier
Abstract:
The metal-graphene contact resistance is a technological bottleneck for the realization of viable graphene based electronics. We report a useful model to find the gate tunable components of this resistance determined by the sequential tunneling of carriers between the 3D-metal and 2D-graphene underneath followed by Klein tunneling to the graphene in the channel. This model quantifies the intrinsic…
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The metal-graphene contact resistance is a technological bottleneck for the realization of viable graphene based electronics. We report a useful model to find the gate tunable components of this resistance determined by the sequential tunneling of carriers between the 3D-metal and 2D-graphene underneath followed by Klein tunneling to the graphene in the channel. This model quantifies the intrinsic factors that control that resistance, including the effect of unintended chemical do**. Our results agree with experimental results for several metals.
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Submitted 30 July, 2015;
originally announced July 2015.
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Impact of graphene polycrystallinity on the performance of graphene field-effect transistors
Authors:
David Jiménez,
Aron W. Cummings,
Ferney Chaves,
Dinh Van Tuan,
Jani Kotakoski,
Stephan Roche
Abstract:
We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, po…
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We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries, and can be used to guide the further development and optimization of graphene-based electronic devices.
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Submitted 4 February, 2014;
originally announced February 2014.
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Model of the Electrostatics and Tunneling Current of Metal-Graphene Junctions and Metal-Insulator-Graphene Heterostructures
Authors:
Ferney A. Chaves,
David Jiménez,
Aron W. Cummings,
Stephan Roche
Abstract:
In this paper we present a comprehensive model for the tunneling current of the metal-insulator-graphene heterostructure, based on the Bardeen Transfer Hamiltonian method, of the metal-insulator-graphene heterostructure. As a particular case we have studied the metal-graphene junction, unveiling the role played by different electrical and physical parameters in determining the differential contact…
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In this paper we present a comprehensive model for the tunneling current of the metal-insulator-graphene heterostructure, based on the Bardeen Transfer Hamiltonian method, of the metal-insulator-graphene heterostructure. As a particular case we have studied the metal-graphene junction, unveiling the role played by different electrical and physical parameters in determining the differential contact resistance.
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Submitted 2 September, 2013;
originally announced September 2013.
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A New Noncentrosymmetric Superconducting Phase in the Li-Rh-B System
Authors:
Hiroyuki Takeya,
Hiroki Fujii,
Mohammed ElMassalami,
Francisco Chaves,
Shuuichi Ooi,
Takashi Mochiku,
Yoshihiko Takano,
Kazuto Hirata,
Kazumasa Togano
Abstract:
Superconductivity, at 2-3 K, was observed in a novel phase of the ternary Li-Rh-B system. The structural phase exhibits a large noncentrosymmetric cubic unit cell with the a-parameter being within 1.208 \leq a \leq 1.215 nm. This phase is stable over a wider compositional range of LixRhBy (0.6 < x < 2, 1 < y < 2). The superconductivity, as well as the unit cell volume, is sensitive to the Li/B con…
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Superconductivity, at 2-3 K, was observed in a novel phase of the ternary Li-Rh-B system. The structural phase exhibits a large noncentrosymmetric cubic unit cell with the a-parameter being within 1.208 \leq a \leq 1.215 nm. This phase is stable over a wider compositional range of LixRhBy (0.6 < x < 2, 1 < y < 2). The superconductivity, as well as the unit cell volume, is sensitive to the Li/B content but it is manifested with Tc \geq 1.8 K over a wider compositional range: the highest Tc \approx 3 K occurs for x : y \approx 0.9:1.5 with a \approx 1.209 nm. The superconducting shielding fraction of most samples is almost 80% of that of Sn. The lower critical field, Hc1(0), is ~65 Oe while the upper one, Hc2(0) is determined from extrapolation to be higher than 14 kOe. We discuss the influence of pressure on Tc and also the influence of the lack of inversion symmetry on the superconducting properties.
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Submitted 3 February, 2011;
originally announced February 2011.
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On the ferromagnetic structure of the intermetallic borocarbide TbCo2B2C
Authors:
M. ElMassalami,
R. Moreno,
R. M. Saeed,
F. A. B. Chaves,
C. M. Chaves,
H. Takeya,
B. Ouladdiaf,
M. Amara
Abstract:
Based on magnetization, specific heat, magnetostriction, and neutron diffraction studies on single-crystal TbCo2B2C, it is found out that the paramagnetic properties, down to liquid nitrogen temperatures, are well described by a Curie-Weiss behavior of the Tb+3 moments. Furthermore, below Tc= 6.3 K, the Tb-sublattice undergoes a ferromagnetic (FM) phase transition with the easy axis being along…
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Based on magnetization, specific heat, magnetostriction, and neutron diffraction studies on single-crystal TbCo2B2C, it is found out that the paramagnetic properties, down to liquid nitrogen temperatures, are well described by a Curie-Weiss behavior of the Tb+3 moments. Furthermore, below Tc= 6.3 K, the Tb-sublattice undergoes a ferromagnetic (FM) phase transition with the easy axis being along the (100) direction and, concomitantly, the unit cell undergoes a tetragonal-to-orthorhhombic distortion. For fields up to 90 kOe, no field-induced splitting of the Co 3d orbitals was observed; as such the internal field must be well below the critical value needed to polarize the Co 3d subsystem. The manifestation of a FM state in TbCo2B2C is unique among all other isomorphous borocarbides, in particular TbNi2B2C (Tn=15 K, incommensurate modulated magnetic state) even though the Tb-ions in both isomorphs have almost the same crystalline electric field properties. The difference in the magnetic modes of these Tb-based isomorphs is attributed to a difference in their exchange couplings caused by a variation in their lattice parameters and in the position of their Fermi levels.
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Submitted 22 December, 2008;
originally announced December 2008.
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Synthesis and magnetic characterization of TmCo2B2C
Authors:
M. ElMassalami,
R. E. Rapp,
F. A. B. Chaves,
R. Moreno,
H. Takeya,
B. Ouladdiaf,
J. W. Lynn,
Q. Huang,
R. S. Freitas,
N. F. Oliveria Jr
Abstract:
A new quaternary intermetallic borocarbide TmCo2B2C has been synthesized via a rapid-quench of an arc-melted ingot. Elemental and powder-diffraction analyses established its correct stoichiometry and single-phase character. The crystal structure is isomorphous to that of TmNi2B2C(I4/mmm) and is stable over the studied temperature range. Above 7 K, the paramagnetic state follows the modified Curi…
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A new quaternary intermetallic borocarbide TmCo2B2C has been synthesized via a rapid-quench of an arc-melted ingot. Elemental and powder-diffraction analyses established its correct stoichiometry and single-phase character. The crystal structure is isomorphous to that of TmNi2B2C(I4/mmm) and is stable over the studied temperature range. Above 7 K, the paramagnetic state follows the modified Curie-Weiss behavior (X=C/(T-theta)+X0 wherein X0=0.008(1) emu/mole and the temperature-dependent term reflecting the paramagnetism of the Tm subsystem: ueff=7.6(2) uB [in agreement with the expected value for a free Tm3+ ion] and theta = -4.5(3) K. Long range ferromagnetic order of the Tm sublattice is observed to develop around ~1 K. No superconductivity is detected in TmCo2B2C down to 20 mK, a feature which is consistent with the general trend in the RCo2B2C series. Finally, the influence of the rapid-quench process on the magnetism (and superconductivity) of TmNi2B2C will be discussed and compared to that of TmCo2B2C.
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Submitted 22 December, 2008;
originally announced December 2008.
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Magnetic order in the S=1/2 two-dimensional molecular antiferromagnet, copper pyrazine perchlorate Cu(Pz)_2(ClO_4)_2
Authors:
T. Lancaster,
S. J. Blundell,
M. L. Brooks,
P. J. Baker,
F. L. Pratt,
J. L. Manson,
M. M. Conner,
F. Xiao,
C. P. Landee,
F. A. Chaves,
S. Soriano,
M. A. Novak,
T. Papageorgiou,
A. Bianchi,
T. Herrmannsdorfer,
J. Wosnitza,
J. A. Schlueter
Abstract:
We present an investigation of magnetic ordering in the two-dimensional S=1/2 quantum magnet Cu(Pz)_2(ClO_4)_2 using specific heat and zero field muon-spin relaxation (μ^+SR). The magnetic contribution to the specific heat is consistent with an exchange strength of 17.7(3) K. We find unambiguous evidence for a transition to a state of three-dimensional long range order below a critical temperatu…
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We present an investigation of magnetic ordering in the two-dimensional S=1/2 quantum magnet Cu(Pz)_2(ClO_4)_2 using specific heat and zero field muon-spin relaxation (μ^+SR). The magnetic contribution to the specific heat is consistent with an exchange strength of 17.7(3) K. We find unambiguous evidence for a transition to a state of three-dimensional long range order below a critical temperature T_N=4.21(1) K using μ^+SR even though there is no feature in the specific heat at that temperature. The absence of a specific heat anomaly at T_N is consistent with recent theoretical predictions. The ratio of T_N/J=0.24 corresponds to a ratio of intralayer to interlayer exchange constants of |J'/J|=6.8x10^-4, indicative of excellent two-dimensional isolation. The scaled magnetic specific heat of [Cu(Pz)_2(HF_2)]BF_4, a compound with an analogous structure, is essentially identical to that of Cu(Pz)_2(ClO_4)_2 although both differ slightly from the predicted value for an ideal 2D S=1/2 Heisenberg antiferromagnet.
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Submitted 13 December, 2006;
originally announced December 2006.
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A simple drain current model for Schottky-barrier carbon nanotube field effect transistors
Authors:
D. Jimenez,
X. Cartoixa,
E. Miranda,
J. Sune,
F. A. Chaves,
S. Roche
Abstract:
We report on a new computational model to efficiently simulate carbon nanotubebased field effect transistors (CNT-FET). In the model, a central region is formed by a semiconducting nanotube that acts as the conducting channel, surrounded by a thin oxide layer and a metal gate electrode. At both ends of the semiconducting channel, two semi-infinite metallic reservoirs act as source and drain cont…
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We report on a new computational model to efficiently simulate carbon nanotubebased field effect transistors (CNT-FET). In the model, a central region is formed by a semiconducting nanotube that acts as the conducting channel, surrounded by a thin oxide layer and a metal gate electrode. At both ends of the semiconducting channel, two semi-infinite metallic reservoirs act as source and drain contacts. The current-voltage characteristics are computed using the Landauer formalism, including the effect of the Schottky barrier physics. The main operational regimes of the CNT-FET are described, including thermionic and tunnel current components, capturing ambipolar conduction, multichannel ballistic transport and electrostatics dominated by the nanotube capacitance. The calculations are successfully compared to results given by more sophisticated methods based on non-equilibrium Green's function formalism (NEGF).
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Submitted 31 October, 2006;
originally announced October 2006.
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A library of Taylor models for PVS automatic proof checker
Authors:
Francisco Cháves,
Marc Daumas
Abstract:
We present in this paper a library to compute with Taylor models, a technique extending interval arithmetic to reduce decorrelation and to solve differential equations. Numerical software usually produces only numerical results. Our library can be used to produce both results and proofs. As seen during the development of Fermat's last theorem reported by Aczel 1996, providing a proof is not suff…
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We present in this paper a library to compute with Taylor models, a technique extending interval arithmetic to reduce decorrelation and to solve differential equations. Numerical software usually produces only numerical results. Our library can be used to produce both results and proofs. As seen during the development of Fermat's last theorem reported by Aczel 1996, providing a proof is not sufficient. Our library provides a proof that has been thoroughly scrutinized by a trustworthy and tireless assistant. PVS is an automatic proof assistant that has been fairly developed and used and that has no internal connection with interval arithmetic or Taylor models. We built our library so that PVS validates each result as it is produced. As producing and validating a proof, is and will certainly remain a bigger task than just producing a numerical result our library will never be a replacement to imperative implementations of Taylor models such as Cosy Infinity. Our library should mainly be used to validate small to medium size results that are involved in safety or life critical applications.
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Submitted 3 February, 2006;
originally announced February 2006.
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Time resolved scattering relaxation mechanisms of microcavity polaritons
Authors:
F. Chaves,
F. J. Rodriguez
Abstract:
We study the polariton relaxation dynamics for different scattering mechanisms as: Phonon and electron scattering procesess. The relaxation polariton is obtained at very short times by solving the Boltzman equation. Instead of the well-known relaxation process by phonons, we show that the bottleneck effect relaxes to the ground state more efficiently at low pump power intensity when the electron…
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We study the polariton relaxation dynamics for different scattering mechanisms as: Phonon and electron scattering procesess. The relaxation polariton is obtained at very short times by solving the Boltzman equation. Instead of the well-known relaxation process by phonons, we show that the bottleneck effect relaxes to the ground state more efficiently at low pump power intensity when the electron relaxation process is included. In this way, we clearly demonstrate that different relaxation times exist, for which any of these two mechanism is more efficient to relax the polariton population to the ground state.
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Submitted 19 August, 2005;
originally announced August 2005.
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Magnon Specific Heat of Single Crystal Borocarbides RNi2B2C (R=Tm, Er, Ho, Dy, Tb, Gd)
Authors:
M. El Massalami,
R. E. Rapp,
F. A. B. Chaves,
H. Takeya,
C. M. Chaves
Abstract:
Zero-field specific heat of the single crystals RNi2B2C (R= Er, Ho, Dy, Tb, Gd) was measured within the temperature range 0.1 K<T<25 K. Linearized spin wave analysis was successfully applied to account for and to rationalize the thermal evolution of the low--temperature magnetic specific heats of all the studied compounds (as well as the one reported for TmNi2B2C) in terms of only two parameters…
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Zero-field specific heat of the single crystals RNi2B2C (R= Er, Ho, Dy, Tb, Gd) was measured within the temperature range 0.1 K<T<25 K. Linearized spin wave analysis was successfully applied to account for and to rationalize the thermal evolution of the low--temperature magnetic specific heats of all the studied compounds (as well as the one reported for TmNi2B2C) in terms of only two parameters, namely an energy gap, delta, and a characteristic temperature, theta. The evolution of the gap and theta across the studied compounds correlates very well with the known magnetic properties. Theta, as a measure of the effective RKKY exchange couplings, scales reasonably well with the de Gennes factor. The gap, on the other hand, reflects predominately the anisotropic properties: ~2 K for GdNi2B2C, ~6 K for ErNi2B2C, ~7 K for TbNi2B2C, and ~8 K for each of HoNi2B2C and DyNi2B2C. The equality in the gap of HoNi2B2C and DyNi2B2C, coupled with the similarity in their magnetic configurations, indicates that a variation of x in the solid solution HoxDy1-xNi2B2C (x<0.8 and Tc<Tn) would not lead to any softening of the gap. This supports the hypothesis of Cho et al (PRL 77,163(1996)) concerning the influence of the collective magnetic excitations on the superconducting state. This work underlines the importance of spin-wave excitations for a valid description of low-temperature thermodynamics of borocarbides.
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Submitted 25 February, 2003;
originally announced February 2003.
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Low-temperature specific heat of La0.78Pb0.22MnO3-d manganite
Authors:
L. Ghivelder,
R. S. Freitas,
R. E. Rapp,
F. A. B. Chaves,
M. Gospodinov,
M. A. Gusmao
Abstract:
The specific heat of the perovskite manganite La0.78Pb0.22MnO3-d was measured from 0.5 to 25 K. The results yield values of the electronic density of states, the Debye temperature, and the spin-wave stiffness constant of the compound. The magnetic contribution was found to be consistent with the existence of a gap in the spin-wave spectrum, and a phonon term in T^5 was needed to fit the data.
The specific heat of the perovskite manganite La0.78Pb0.22MnO3-d was measured from 0.5 to 25 K. The results yield values of the electronic density of states, the Debye temperature, and the spin-wave stiffness constant of the compound. The magnetic contribution was found to be consistent with the existence of a gap in the spin-wave spectrum, and a phonon term in T^5 was needed to fit the data.
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Submitted 14 May, 2000;
originally announced May 2000.
