Showing 1–29 of 29 results for author: Chauhan, Y

Room Temperature Ferroelectricity and Electrically Tunable Berry Curvature Dipole in III-V Monolayers

Authors: Ateeb Naseer, Achintya Priydarshi, Pritam Ghosh, Raihan Ahammed, Yogesh Singh Chauhan, Somnath Bhowmick, Amit Agarwal

Abstract: Two-dimensional ferroelectric monolayers are promising candidates for compact memory devices and flexible electronics. Here, through first-principles calculations, we predict room temperature ferroelectricity in AB-type monolayers comprising group III (A = Al, In, Ga) and group V (B = As, P, Sb) elements. We show that their spontaneous polarization, oriented out-of-plane, ranges from 9.48 to 13.96… ▽ More Two-dimensional ferroelectric monolayers are promising candidates for compact memory devices and flexible electronics. Here, through first-principles calculations, we predict room temperature ferroelectricity in AB-type monolayers comprising group III (A = Al, In, Ga) and group V (B = As, P, Sb) elements. We show that their spontaneous polarization, oriented out-of-plane, ranges from 9.48 to 13.96 pC/m, outperforming most known 2D ferroelectric. We demonstrate electric field tunable Berry curvature dipole and nonlinear Hall current in these monolayers. Additionally, we highlight their applicability in next-generation memory devices by forming efficient ferroelectric tunnel junctions, especially in InP, which supports high tunneling electroresistance. Our findings motivate further exploration of these monolayers for studying the interplay between Berry curvature and ferroelectricity and for integrating these ferroelectric monolayers in next-generation electronic devices. △ Less

Submitted 29 May, 2024; originally announced May 2024.

Journal ref: Nanoscale (2024)

Amazon Books Rating prediction & Recommendation Model

Authors: Hsiu-** Lin, Suman Chauhan, Yougender Chauhan, Nagender Chauhan, Jongwook Woo

Abstract: This paper uses the dataset of Amazon to predict the books ratings listed on Amazon website. As part of this project, we predicted the ratings of the books, and also built a recommendation cluster. This recommendation cluster provides the recommended books based on the column's values from dataset, for instance, category, description, author, price, reviews etc. This paper provides a flow of handl… ▽ More This paper uses the dataset of Amazon to predict the books ratings listed on Amazon website. As part of this project, we predicted the ratings of the books, and also built a recommendation cluster. This recommendation cluster provides the recommended books based on the column's values from dataset, for instance, category, description, author, price, reviews etc. This paper provides a flow of handling big data files, data engineering, building models and providing predictions. The models predict book ratings column using various PySpark Machine Learning APIs. Additionally, we used hyper-parameters and parameters tuning. Also, Cross Validation and TrainValidationSplit were used for generalization. Finally, we performed a comparison between Binary Classification and Multiclass Classification in their accuracies. We converted our label from multiclass to binary to see if we could find any difference between the two classifications. As a result, we found out that we get higher accuracy in binary classification than in multiclass classification. △ Less

Submitted 4 October, 2023; originally announced October 2023.

Comments: 5 pages, 4 figures, 8 tables

Versatility of type-II van der Waals heterostructures: a case study with SiH-CdCl2

Authors: Achintya Priydarshi, Abhinav Arora, Yogesh Singh Chauhan, Amit Agarwal, Somnath Bhowmick

Abstract: Unlike bilayers or a few layers thick materials, heterostructures are designer materials formed by assembling different monolayers in any desired sequence. As a result, while multilayer materials come with their intrinsic properties, heterostructures can be tailor-made to suit specific applications. Taking SiH-CdCl 2 as a representative system, we show the potential of heterostructures for several… ▽ More Unlike bilayers or a few layers thick materials, heterostructures are designer materials formed by assembling different monolayers in any desired sequence. As a result, while multilayer materials come with their intrinsic properties, heterostructures can be tailor-made to suit specific applications. Taking SiH-CdCl 2 as a representative system, we show the potential of heterostructures for several applications, like piezoelectricity, photocatalytic water splitting, and tunnel field effect transistor (TFET). Our study confirms that the characteristics of the heterostructure mainly depend on the potential difference between the constituent monolayers. From the vast database of available layered materials, many such combinations with a suitable potential difference are expected to have similar properties. Our work points to a vast pool of assembled materials with multifunctionality, an excellent asset for next-generation device applications. △ Less

Submitted 3 June, 2023; originally announced June 2023.

Journal ref: Cite this: J. Phys. Chem. C 2023

Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET

Authors: Zijian Zhao, Shan Deng, Swetaki Chatterjee, Zhouhang Jiang, Muhammad Shaffatul Islam, Yi Xiao, Yixin Xu, Scott Meninger, Mohamed Mohamed, Rajiv Joshi, Yogesh Singh Chauhan, Halid Mulaosmanovic, Stefan Duenkel, Dominik Kleimaier, Sven Beyer, Hussam Amrouch, Vijaykrishnan Narayanan, Kai Ni

Abstract: Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers from read disturb, especially to the high-threshold voltage (VTH) state as the retention energy barrier is reduced by the applied read bias. To address both issues, we propose to adopt a read disturb-free dual-port FeFET w… ▽ More Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers from read disturb, especially to the high-threshold voltage (VTH) state as the retention energy barrier is reduced by the applied read bias. To address both issues, we propose to adopt a read disturb-free dual-port FeFET where write is performed on the gate featuring a ferroelectric layer and the read is done on a separate gate featuring a non-ferroelectric dielectric. Combining the unique structure and the separate read gate, read disturb is eliminated as the applied field is aligned with polarization in the high-VTH state and thus improving its stability, while it is screened by the channel inversion charge and exerts no negative impact on the low-VTH state stability. Comprehensive theoretical and experimental validation have been performed on fully-depleted silicon-on-insulator (FDSOI) FeFETs integrated on 22 nm platform, which intrinsically has dual ports with its buried oxide layer acting as the non-ferroelectric dielectric. Novel applications that can exploit the proposed dual-port FeFET are proposed and experimentally demonstrated for the first time, including FPGA that harnesses its read disturb-free feature and tunable analog electronics (e.g., frequency tunable ring oscillator in this work) leveraging the separated write and read paths. △ Less

Submitted 2 May, 2023; originally announced May 2023.

Comments: 32 pages

Compact and High-Performance TCAM Based on Scaled Double-Gate FeFETs

Authors: Liu Liu, Shubham Kumar, Simon Thomann, Yogesh Singh Chauhan, Hussam Amrouch, Xiaobo Sharon Hu

Abstract: Ternary content addressable memory (TCAM), widely used in network routers and high-associativity caches, is gaining popularity in machine learning and data-analytic applications. Ferroelectric FETs (FeFETs) are a promising candidate for implementing TCAM owing to their high ON/OFF ratio, non-volatility, and CMOS compatibility. However, conventional single-gate FeFETs (SG-FeFETs) suffer from relati… ▽ More Ternary content addressable memory (TCAM), widely used in network routers and high-associativity caches, is gaining popularity in machine learning and data-analytic applications. Ferroelectric FETs (FeFETs) are a promising candidate for implementing TCAM owing to their high ON/OFF ratio, non-volatility, and CMOS compatibility. However, conventional single-gate FeFETs (SG-FeFETs) suffer from relatively high write voltage, low endurance, potential read disturbance, and face scaling challenges. Recently, a double-gate FeFET (DG-FeFET) has been proposed and outperforms SG-FeFETs in many aspects. This paper investigates TCAM design challenges specific to DG-FeFETs and introduces a novel 1.5T1Fe TCAM design based on DG-FeFETs. A 2-step search with early termination is employed to reduce the cell area and improve energy efficiency. A shared driver design is proposed to reduce the peripherals area. Detailed analysis and SPICE simulation show that the 1.5T1Fe DG-TCAM leads to superior search speed and energy efficiency. The 1.5T1Fe TCAM design can also be built with SG-FeFETs, which achieve search latency and energy improvement compared with 2FeFET TCAM. △ Less

Submitted 13 April, 2023; v1 submitted 7 April, 2023; originally announced April 2023.

Comments: Accepted by Design Automation Conference (DAC) 2023

Room Temperature Ferroelectricity, Ferromagnetism, and Anomalous Hall Effect in Half-metallic Monolayer CrTe

Authors: Imran Ahamed, Atasi Chakraborty, Pushpendra Yadav, Rik Dey, Yogesh Singh Chauhan, Somnath Bhowmick, Amit Agarwal

Abstract: Two-dimensional materials hosting ferroelectricity and ferromagnetism are crucial for low-power and high-speed information processing technologies. However, intrinsic 2D multiferroics in the monolayer limit are rare. Here, we demonstrate that monolayer CrTe, obtained by cleaving the [002] surface, is dynamically stable multiferroic at temperatures beyond room temperature. We show that it orders fe… ▽ More Two-dimensional materials hosting ferroelectricity and ferromagnetism are crucial for low-power and high-speed information processing technologies. However, intrinsic 2D multiferroics in the monolayer limit are rare. Here, we demonstrate that monolayer CrTe, obtained by cleaving the [002] surface, is dynamically stable multiferroic at temperatures beyond room temperature. We show that it orders ferromagnetically with significant in-plane magnetocrystalline anisotropy, and it is a half-metal featuring a large half-metal gap. Remarkably, the broken inversion symmetry and buckled geometry of monolayer CrTe make it a ferroelectric with a large spontaneous out-of-plane polarization and significant magnetoelectric coupling. In addition, we demonstrate polarization or electric field-induced tunability of the anomalous Hall effect, accompanied by substantial bandstructure modulation. Our findings establish monolayer CrTe as a room-temperature multiferroic with great potential for applications in spintronics and ferroelectric devices. △ Less

Submitted 24 October, 2023; v1 submitted 4 February, 2023; originally announced February 2023.

Comments: 9 double column pages, and 5 figures; A significantly updated version predicting monolayer CrTe to be an intrinsic multiferroic at room temperature

Designing power efficient transistors using narrow bandwidth materials from the MA2Z4 monolayer series

Authors: Keshari Nandan, Somnath Bhowmick, Yogesh S. Chauhan, Amit Agarwal

Abstract: The subthreshold leakage current in transistors has become a critical limiting factor for realizing ultra-low-power transistors. The leakage current is predominantly dictated by the long thermal tail of the charge carriers. We propose a solution to this problem by using narrow bandwidth semiconductors for limiting the thermionic leakage current by filtering out the high energy carriers. We specifi… ▽ More The subthreshold leakage current in transistors has become a critical limiting factor for realizing ultra-low-power transistors. The leakage current is predominantly dictated by the long thermal tail of the charge carriers. We propose a solution to this problem by using narrow bandwidth semiconductors for limiting the thermionic leakage current by filtering out the high energy carriers. We specifically demonstrate this solution in transistors with laterally confined monolayer MoSi2N4 with different passivation serving as channel material. Remarkably, we find that the proposed narrow bandwidth devices can achieve a large ON/OFF current ratio with an ultra-low-power supply voltage of 0.1 V, even for devices with a 5 nm gate length. We also show that several other materials share the unique electronic properties of narrow bandwidth conduction and valance bands in the same series. △ Less

Submitted 17 November, 2022; originally announced November 2022.

Comments: 11 pages with 4 figures

Multi Spectral Switchable Infra-Red Reflectance Resonances in Highly Subwavelength Partially Oxidized Vanadium Thin Films

Authors: Ashok P, Yogesh Singh Chauhan, Amit Verma

Abstract: Phase transition materials are promising for realization of switchable optics. In this work, we show reflectance resonances in the near-infrared and long-wave infrared wavelengths in highly subwavelength partially oxidized Vanadium thin films. These partially oxidized films consist of a multilayer of Vanadium dioxide and Vanadium as shown using Raman spectroscopy and four-probe measurements. As Va… ▽ More Phase transition materials are promising for realization of switchable optics. In this work, we show reflectance resonances in the near-infrared and long-wave infrared wavelengths in highly subwavelength partially oxidized Vanadium thin films. These partially oxidized films consist of a multilayer of Vanadium dioxide and Vanadium as shown using Raman spectroscopy and four-probe measurements. As Vanadium dioxide is a phase transition material that shows insulator to metal phase transition at 68 C, the observed infra-red resonances can be switched with temperature into a high-reflectance state. The wavelength of these resonances are passively tunable as a function of the oxidation duration. The obtained reflectance resonance at near-infrared wavelength red shifts from 1.78 um to 2.68 um with increasing oxidation duration while the long-wavelength infrared resonance blue shifts from 12.68 um to 9.96 um. To find the origin of the reflectance resonances, we model the reflectance spectra as a function of the oxidation duration using the transfer matrix method. The presented model captures the dual reflectance resonances reasonably well. These passive wavelength-tunable and switchable resonances with easy to fabricate lithography-free multilayer structure will be useful for multispectral applications such as camouflage, spectral selective microbolometer, and thermal management. △ Less

Submitted 29 August, 2022; originally announced August 2022.

Comments: 10 pages, 3 figures

Report number: Optical Materials, Volume 132, 2022, 112854,

Journal ref: Optical Materials ,Volume 132,112854, (2022)

Static negative susceptibility in ferromagnetic material induced by domain wall motion: an aspect of superconductor state

Authors: Nilesh Pandey, Yogesh Singh Chauhan

Abstract: Domain wall motion in magnetic materiel induces the negative susceptibility leading to a perfect diamagnetism state. The local susceptibility is calculated by the derivative of magnetization ($\vec{M}$) vector w.r.t. magnetic field strength ($\vec{H}$) vector. In the transient region from the upward domain to the downward domain (domain wall width), local $\vec{M}$ and $\vec{H}$ vectors exhibit op… ▽ More Domain wall motion in magnetic materiel induces the negative susceptibility leading to a perfect diamagnetism state. The local susceptibility is calculated by the derivative of magnetization ($\vec{M}$) vector w.r.t. magnetic field strength ($\vec{H}$) vector. In the transient region from the upward domain to the downward domain (domain wall width), local $\vec{M}$ and $\vec{H}$ vectors exhibit opposite slopes, which leads to a negative susceptibility value. A negative susceptibility value induces the diamagnetism effect leading to a relative permeability value $<$ 1 $\left(μ_r < 1\right)$. This diamagnetism sate originates due to the domain wall motion, which is an entirely different mechanism from the electron motion's induced diamagnetism. Furthermore, the strength of the diamagnetism state can be enhanced by tuning the gradient energy of a domain that may correspond to a perfect diamagnetism state $\left(χ_v \approx -1 \Rightarrow μ_r \rightarrow 0\right)$. Besides, we believe that there may be a possibility of sustaining such a diamagnetic state (domain wall induced) in a ferromagnetic material that is utterly contradictory to the conventional theory. △ Less

Submitted 15 March, 2022; originally announced March 2022.

Physics and modeling of multi-domain FeFET with domain wall induced Negative Capacitance

Authors: Nilesh Pandey, Yogesh Singh Chauhan

Abstract: In this paper, we present the dynamics and modeling of multi-domains in the ferroelectric FET (FeFET). Due to the periodic texture of domains, the electrostatics of the FeFET exhibit an oscillatory conduction band profile. To capture such oscillations, we solve coupled 2-D Poisson's equation with the net ferroelectric energy density (gradient energy + free energy + depolarization energy) equation.… ▽ More In this paper, we present the dynamics and modeling of multi-domains in the ferroelectric FET (FeFET). Due to the periodic texture of domains, the electrostatics of the FeFET exhibit an oscillatory conduction band profile. To capture such oscillations, we solve coupled 2-D Poisson's equation with the net ferroelectric energy density (gradient energy + free energy + depolarization energy) equation. Multi-domain dynamics are captured by minimizing the net ferroelectric energy leading to a thermodynamically stable state. Furthermore, we show that the motion of domain walls originates local bound charge density in the ferroelectric region, which induces the negative capacitance (NC) effect. The strength of domain wall-induced NC is determined by the gradient energy of the ferroelectric material. FeFET exhibits variability in the drain current with domain period due to the inherent NC effect. Additionally, the impact of domain wall transition (soft$\rightleftharpoons$hard) on the device's electrostatic/transport is also analyzed. The model also accurately captures both nucleations of a new domain and the motion of the domain wall. Furthermore, the model is thoroughly validated against experimental results and phase-field simulations. △ Less

Submitted 25 February, 2022; originally announced February 2022.

Dynamics of Multi-Domains in Ferroelectric Tunnel Junction

Authors: Nilesh Pandey, Yogesh Singh Chauhan

Abstract: The Discovery of giant tunnel electroresistance (TER) in Ferroelectric Tunnel Junction (FTJ) paves a futuristic possibility of utilizing the FTJ as a bistable resistive device with an enormously high ON/OFF ratio. In the last 20 years, numerous studies have reported that the formation of multidomain in ferroelectric material is an inevitable process to minimize the total system energy. Recent stud… ▽ More The Discovery of giant tunnel electroresistance (TER) in Ferroelectric Tunnel Junction (FTJ) paves a futuristic possibility of utilizing the FTJ as a bistable resistive device with an enormously high ON/OFF ratio. In the last 20 years, numerous studies have reported that the formation of multidomain in ferroelectric material is an inevitable process to minimize the total system energy. Recent studies based on phase-field simulations have demonstrated that domain nucleation/motion substantially alters the electrostatics of a ferroelectric material. However, the impact of domain dynamics on quantum transport in FTJ remains elusive. This paper presents a comprehensive study of multidomain dynamics in a ferroelectric tunnel junction. Analysis of this article is twofold; firstly, we study the impact of domain dynamics on electrostatics in an FTJ. Subsequently, the obtained electrostatics is used to study the variations in tunneling current, and TER originated from multidomain dynamics. We show that ON/OFF current density and TER vary locally in the ferroelectric region. Furthermore, the device's electrostatics and quantum transport exhibit an oscillatory nature due to periodic domain texture. ON/OFF current density shows a sine/cosine distribution in ferroelectric, and approximately one-decade local variation in current density is observed. These local fluctuations in current density cause oscillations in the device's ON/OFF ratio. Optimization techniques to achieve a uniform and maximum TER are also discussed. A 2D analytical and explicit model is derived by solving coupled 2D Poisson's equation and Landau-Ginzburg equation. The model incorporates the switching and nucleation of domains by minimizing net ferroelectric energy (depolarization+free+gradient energy density). Furthermore, the impact of the bottom insulator layer on ferroelectric's gradient energy is also studied. △ Less

Submitted 10 February, 2022; originally announced February 2022.

Two-dimensional MoSi2N4: An Excellent 2D Semiconductor for Transistors

Authors: Keshari Nandan, Barun Ghosh, Amit Agarwal, Somnath Bhowmick, Yogesh S. Chauhan

Abstract: We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices' performance is assessed as per the International Roadmap for Devices and Systems (IRDS) 2020 roadmap for the year 2034 and compared to advanced silicon-based FETs, c… ▽ More We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices' performance is assessed as per the International Roadmap for Devices and Systems (IRDS) 2020 roadmap for the year 2034 and compared to advanced silicon-based FETs, carbon nanotube-based FETs, and other promising two-dimensional materials based FETs. Finally, we estimate the figure of merits of a combinational and a sequential logic circuit based on our double gate devices and benchmark against promising alternative logic technologies. The performance of our devices and circuits based on them are encouraging, and competitive to other logic alternatives. △ Less

Submitted 10 May, 2022; v1 submitted 25 January, 2022; originally announced January 2022.

Comments: 8 pages, 12 figures

Journal ref: IEEE Transactions on Electron Devices ( Volume: 69, Issue: 1, Jan. 2022)

Strain-tunable in-plane ferroelectricity and lateral tunnel junction in monolayer group-IV monochalcogenides

Authors: Achintya Priydarshi, Yogesh Singh Chauhan, Somnath Bhowmick, Amit Agarwal

Abstract: 2D Ferroelectric materials are promising for designing low-dimensional memory devices. Here, we explore strain tunable ferroelectric properties of group-IV monochalcogenides MX (M=Ge, Sn; X=S, Se) and their potential application in lateral field tunnel junction devices. We find that these monolayers have in-plane ferroelectricity, with their ferroelectric parameters being on par with other known 2… ▽ More 2D Ferroelectric materials are promising for designing low-dimensional memory devices. Here, we explore strain tunable ferroelectric properties of group-IV monochalcogenides MX (M=Ge, Sn; X=S, Se) and their potential application in lateral field tunnel junction devices. We find that these monolayers have in-plane ferroelectricity, with their ferroelectric parameters being on par with other known 2D ferroelectric materials. Amongst SnSe, SnS, GeSe, and GeS, we find that GeS has the best ferroelectric parameters for device applications, which can be improved further by applying uniaxial tensile strain. We use the calculated ferroelectric properties of these materials to study the tunneling electroresistance (TER) of a 4 nm device based on lateral ferroelectric tunnel junction. We find a substantial TER ratio $10^3-10^5$ in the devices based on these materials, which can be further improved up to a factor of 40 on the application of tensile strain. △ Less

Submitted 21 January, 2022; originally announced January 2022.

Journal ref: Journal of Applied Physics 131, 034101 (2022)

PdSe2 based field-effect transistors

Authors: Keshari Nandan, Amit Agarwal, Somnath Bhowmick, Yogesh S. Chauhan

Abstract: Pentagonal PdSe2 is a promising candidate for layered electronic devices, owing to its high air-stability and anisotropic transport properties. Here, we investigate the performance of p-type FET based on PdSe$_2$ mono-layer using multi-scale simulation framework combining Density functional theory and quantum transport. We find that mono-layer PdSe$_2$ devices show excellent switching characterist… ▽ More Pentagonal PdSe2 is a promising candidate for layered electronic devices, owing to its high air-stability and anisotropic transport properties. Here, we investigate the performance of p-type FET based on PdSe$_2$ mono-layer using multi-scale simulation framework combining Density functional theory and quantum transport. We find that mono-layer PdSe$_2$ devices show excellent switching characteristics ($<$ 65 mV/decade) for the source-drain direction aligned along both [010] and [100] directions. Both directions also show good on-state current and large transconductance, though these are larger along the [010] direction for a 15 nm channel device. The channel length scaling study of these p-FETs indicates that channel length can be easily scaled down to 7 nm without any significance compromise in the performance. Going below 7 nm, we find that there is a severe degradation in the sub-threshold swing for 4 nm channel length. However, this degradation can be minimized by introducing an underlap structure. The length of underlap is determined by the trade-off between on-state current and the switching performance. △ Less

Submitted 30 April, 2023; v1 submitted 10 January, 2022; originally announced January 2022.

Comments: 8 pages, 9 figures, IEEE Transactions on Electron Devices 68 (12), 6551-6557

Journal ref: IEEE Transactions on Electron Devices (Volume: 68, Issue: 12, Dec. 2021)

Effect of Vanadium Thickness and Deposition Temperature on VO2 Synthesis using Atmospheric Pressure Thermal Oxidation

Authors: Ashok P, Yogesh Singh Chauhan, Amit Verma

Abstract: Vanadium dioxide (VO2) is a phase transition material that undergoes a reversible insulator-metal phase transition at ~ 68 C. Atmospheric pressure thermal oxidation (APTO) of vanadium (V) is a simple VO2 synthesis method in which V thin film is oxidized in open air. For an optimum oxidation duration, VO2 films are obtained with good phase transition properties. We recently reported a modified APTO… ▽ More Vanadium dioxide (VO2) is a phase transition material that undergoes a reversible insulator-metal phase transition at ~ 68 C. Atmospheric pressure thermal oxidation (APTO) of vanadium (V) is a simple VO2 synthesis method in which V thin film is oxidized in open air. For an optimum oxidation duration, VO2 films are obtained with good phase transition properties. We recently reported a modified APTO process using a step temperature profile for oxidation (Thin Solid Films 706, 138003 (2020)). We demonstrated an ultra-low thermal budget synthesis of VO2 thin films with good electrical and optical phase transition properties. For a 130 nm room-temperature RF sputtered V thin film, an optimum oxidation duration of ~ 30 s was obtained. In this work, we study how the starting V film thickness and deposition temperature affects the optimum oxidation duration. V thin films of varying thickness (15-212 nm) and 120 nm thick V films with varying deposition temperature (~27-450 C) are prepared using RF magnetron sputtering. These films are oxidized for different oxidation durations and characterized using Raman and four-probe measurements to find the optimum oxidation duration for each deposition condition. We find that the optimum oxidation duration increases with the increase in V film thickness and V deposition temperature. We model the effect of V film thickness and deposition temperature on the optimal oxidation time using a parabolic law which can be used to obtain the optimal oxidation times for intermediate V thicknesses/deposition temperatures. △ Less

Submitted 3 July, 2021; originally announced July 2021.

Comments: 17 pages, 6 figures

Journal ref: Thin Solid Films 724, 138630 (2021)

High Infrared Reflectance Modulation in VO2 Films Synthesized on Glass and ITO coated Glass substrates using Atmospheric Oxidation of Vanadium

Authors: Ashok P, Yogesh Singh Chauhan, Amit Verma

Abstract: Vanadium Dioxide (VO2) is a strongly correlated material, which exhibits insulator to metal transition at ~68 C along with large resistivity and infrared optical reflectance modulation. In this work, we use atmospheric pressure thermal oxidation of Vanadium to synthesize VO2 films on glass and ITO coated glass substrates. With the optimized short oxidation durations of 2 min and 4 min, the synthes… ▽ More Vanadium Dioxide (VO2) is a strongly correlated material, which exhibits insulator to metal transition at ~68 C along with large resistivity and infrared optical reflectance modulation. In this work, we use atmospheric pressure thermal oxidation of Vanadium to synthesize VO2 films on glass and ITO coated glass substrates. With the optimized short oxidation durations of 2 min and 4 min, the synthesized VO2 film shows high optical reflectance switching in long-wavelength infrared on glass substrates and mid-wavelength infrared on ITO coated glass substrates, respectively. Peak reflectance switching values of ~76% and ~79% are obtained on the respective substrates, which are among the highest reported values. Using the reflectance data, we extract VO2 complex refractive index in infrared wavelengths, in both the insulating and metallic phases. The extracted refractive index shows good agreement with VO2 synthesized using other methods. This demonstration of high optical reflectance switching in VO2 thin films, grown on low cost glass and ITO coated glass substrates, using a simple low thermal budget process will aid in enhancing VO2 applications in the optical domain. △ Less

Submitted 26 June, 2021; originally announced June 2021.

Comments: 15 pages, 4 figures

Journal ref: Optical materials, 110, 110438 (2020)

Vanadium Dioxide Thin Films Synthesized Using Low Thermal Budget Atmospheric Oxidation

Authors: P Ashok, Yogesh Singh Chauhan, Amit Verma

Abstract: Vanadium dioxide is a complex oxide material, which shows large resistivity and optical reflectance change while transitioning from the insulator to metal phase at ~68 °C. In this work, we use a modified atmospheric thermal oxidation method to oxidize RF-sputtered Vanadium films. Structural, surface-morphology and phase-transition properties of the oxidized films as a function of oxidation duratio… ▽ More Vanadium dioxide is a complex oxide material, which shows large resistivity and optical reflectance change while transitioning from the insulator to metal phase at ~68 °C. In this work, we use a modified atmospheric thermal oxidation method to oxidize RF-sputtered Vanadium films. Structural, surface-morphology and phase-transition properties of the oxidized films as a function of oxidation duration are presented. Phase-pure VO2 films are obtained by oxidizing ~130 nm Vanadium films in short oxidation duration of ~30 seconds. Compared to previous reports on VO2 synthesis using atmospheric oxidation of Vanadium films of similar thickness, we obtain a reduction in oxidation duration by more than one order. Synthesized VO2 thin film shows resistance switching of ~3 orders of magnitude. We demonstrate optical reflectance switching in long-wave infrared wavelengths in VO2 films synthesized using atmospheric oxidation of Vanadium. The extracted refractive index of VO2 in the insulating and in the metallic phase is in good agreement with VO2 synthesized using other methods. The considerable reduction in oxidation time of VO2 synthesis while retaining good resistance and optical switching properties will help in integration of VO2 in limited thermal budget processes, enabling further applications of this phase-transition material. △ Less

Submitted 21 May, 2021; originally announced May 2021.

Comments: 15 pages, 5 figures

Journal ref: Thin Solid Films. 706, 138003 (2020)

Temperature Dependence of $β-Ga_2O_3$ Heteroepitaxy on c-plane Sapphire using Low Pressure Chemical Vapor Deposition

Authors: Gavax Joshi, Yogesh Singh Chauhan, Amit Verma

Abstract: $β-Ga_2O_3$ has drawn significant attention for power electronics and deep ultraviolet (UV) photodetectors owing to its wide bandgap of ~ 4.4 - 4.9 eV and high electric breakdown strength ~7-8 MV/cm. Growth of $β-Ga_2O_3… ▽ More $β-Ga_2O_3$ has drawn significant attention for power electronics and deep ultraviolet (UV) photodetectors owing to its wide bandgap of ~ 4.4 - 4.9 eV and high electric breakdown strength ~7-8 MV/cm. Growth of $β-Ga_2O_3$ epitaxial thin films with high growth rate has been recently reported using low pressure chemical vapor deposition (LPCVD) technique. In this work, we have investigated the effect of growth temperature on $β-Ga_2O_3$ films grown on c-plane sapphire substrates using LPCVD. We performed growths by varying temperatures from 800$^°$C to 950$^°$C while kee** all other growth parameters (Ar/O$_2$ gas flow rates, growth pressure, and Gallium precursor to substrate distance) constant. Optical, structural, and surface characterizations are performed to determine the bandgap, phase purity, crystal orientation, and crystalline quality of the grown thin films. Amorphous islands of $Ga_2O_3$ are observed at growth temperature of 800$^°$C while continuous and crystalline (-201) oriented $β-Ga_2O_3$ thin films are achieved for growth temperatures of 850$^°$C to 950$^°$C. Crystallinity of the films is found to improve with increase in growth temperature with a minimum rocking full width at half maximum of 1.52$^°$ in sample grown at 925$^°$C. For all the samples grown at and above 875$^°$C, transmittance measurements revealed an optical bandgap of ~4.77-4.80 eV with high growth rate of ~6 $μ$m/hr. △ Less

Submitted 7 February, 2021; originally announced February 2021.

Variability Analysis in a 3-D Multi-Granular Hf$_x$Zr$_{1-x}$O$_2$ Ferroelectric Capacitor

Authors: Nilesh Pandey, Karishma Qureshi, Yogesh Singh Chauhan

Abstract: A simulation-based study of variability of remnant polarization $\left (P_r \right)$ in a multi-granular 3-D ultra-thin ferroelectric (FE) capacitor is presented in this paper. The Poisson Voronoi Tessellation Diagram (PVD) is used for the nucleation of grains in the FE region, which corresponds to the physical growth mechanism. The PVD algorithm implemented in MATLAB is coupled with TCAD simulati… ▽ More A simulation-based study of variability of remnant polarization $\left (P_r \right)$ in a multi-granular 3-D ultra-thin ferroelectric (FE) capacitor is presented in this paper. The Poisson Voronoi Tessellation Diagram (PVD) is used for the nucleation of grains in the FE region, which corresponds to the physical growth mechanism. The PVD algorithm implemented in MATLAB is coupled with TCAD simulations, to trace the ferroelectric hysteresis loop. It is found that the grains which have linear profile of $P_r$ show larger variability in the FE hysteresis loop, compared to the grains, which follow the Gaussian distribution of $P_r$. Additionally, the impact of dielectric content in the FE grains is analyzed. It is seen that the dielectric grains cause very large amount of variability in the FE hysteresis loop. An increase in the dielectric grains also leads to a loss in the retentivity of the hysteresis loop. △ Less

Submitted 25 November, 2020; originally announced November 2020.

Comments: 4 pages, 7 figures

Analytical modeling and Dynamics of Multi-Domains in Negative-Capacitance MFIS-FETs

Authors: Nilesh Pandey, Yogesh Singh Chauhan

Abstract: Analytical modeling and dynamics of multidomain in metal-ferroelectric-insulator-semiconductor (MFIS)-FETs are presented in this paper. The formation of multi-domain (MD) leads to oscillations in the conduction band in the channel and periodicity in the local electric field in the ferroelectric region. The impact of 2-D local electric field on the MD switching is captured in the model using the do… ▽ More Analytical modeling and dynamics of multidomain in metal-ferroelectric-insulator-semiconductor (MFIS)-FETs are presented in this paper. The formation of multi-domain (MD) leads to oscillations in the conduction band in the channel and periodicity in the local electric field in the ferroelectric region. The impact of 2-D local electric field on the MD switching is captured in the model using the domain wall velocity concept. The optimum values of oxide thickness, ferroelectric thickness and channel length are calculated which corresponds to mono-domain device operation. Deviation from the optimum device parameters causes the transition of mono-domain state to multi-domain state in the ferroelectric. This work can be used as a guideline for designing MFIS-NCFETs, which provides the device parameters that leads to monodomain state in the MFIS-NCFET. △ Less

Submitted 8 November, 2020; originally announced November 2020.

Deep Learning Techniques to make Gravitational Wave Detections from Weak Time-Series Data

Authors: Yash Chauhan

Abstract: Gravitational waves are ripples in the space time fabric when high energy events such as black hole mergers or neutron star collisions take place. The first Gravitational Wave (GW) detection (GW150914) was made by the Laser Interferometer Gravitational-wave Observatory (LIGO) and Virgo Collaboration on September 14, 2015. Furthermore, the proof of the existence of GWs had countless implications fr… ▽ More Gravitational waves are ripples in the space time fabric when high energy events such as black hole mergers or neutron star collisions take place. The first Gravitational Wave (GW) detection (GW150914) was made by the Laser Interferometer Gravitational-wave Observatory (LIGO) and Virgo Collaboration on September 14, 2015. Furthermore, the proof of the existence of GWs had countless implications from Stellar Evolution to General Relativity. Gravitational waves detection requires multiple filters and the filtered data has to be studied intensively to come to conclusions on whether the data is a just a glitch or an actual gravitational wave detection. However, with the use of Deep Learning the process is simplified heavily, as it reduces the level of filtering greatly, and the output is more definitive, even though the model produces a probabilistic result. Our technique, Deep Learning, utilizes a different implementation of a one-dimensional convolutional neural network (CNN). The model is trained by a composite of real LIGO noise, and injections of GW waveform templates. The CNN effectively uses classification to differentiate weak GW time series from non-gaussian noise from glitches in the LIGO data stream. In addition, we are the first study to utilize fine-tuning as a means to train the model with a second pass of data, while maintaining all the learned features from the initial training iteration. This enables our model to have a sensitivity of 100%, higher than all prior studies in this field, when making real-time detections of GWs at an extremely low Signal-to-noise ratios (SNR), while still being less computationally expensive. This sensitivity, in part, is also achieved through the use of deep signal manifolds from both the Hanford and Livingston detectors, which enable the neural network to be responsive to false positives. △ Less

Submitted 12 April, 2021; v1 submitted 11 July, 2020; originally announced July 2020.

Comments: 9 pages, 4 figures

MSC Class: 68T07

Journal ref: International Astronomy and Astrophysics Research Journal, Vol. 3, no. 2, Apr. 2021, pp. 1-9

Power Side-Channel Attacks in Negative Capacitance Transistor (NCFET)

Authors: Johann Knechtel, Satwik Patnaik, Mohammed Nabeel, Mohammed Ashraf, Yogesh S. Chauhan, Jörg Henkel, Ozgur Sinanoglu, Hussam Amrouch

Abstract: Side-channel attacks have empowered bypassing of cryptographic components in circuits. Power side-channel (PSC) attacks have received particular traction, owing to their non-invasiveness and proven effectiveness. Aside from prior art focused on conventional technologies, this is the first work to investigate the emerging Negative Capacitance Transistor (NCFET) technology in the context of PSC atta… ▽ More Side-channel attacks have empowered bypassing of cryptographic components in circuits. Power side-channel (PSC) attacks have received particular traction, owing to their non-invasiveness and proven effectiveness. Aside from prior art focused on conventional technologies, this is the first work to investigate the emerging Negative Capacitance Transistor (NCFET) technology in the context of PSC attacks. We implement a CAD flow for PSC evaluation at design-time. It leverages industry-standard design tools, while also employing the widely-accepted correlation power analysis (CPA) attack. Using standard-cell libraries based on the 7nm FinFET technology for NCFET and its counterpart CMOS setup, our evaluation reveals that NCFET-based circuits are more resilient to the classical CPA attack, due to the considerable effect of negative capacitance on the switching power. We also demonstrate that the thicker the ferroelectric layer, the higher the resiliency of the NCFET-based circuit, which opens new doors for optimization and trade-offs. △ Less

Submitted 8 July, 2020; originally announced July 2020.

Intrinsic magnetism in monolayer transition metal trihalides: a comparative study

Authors: Shalini Tomar, Barun Ghosh, Sougata Mardanya, Priyank Rastogi, BS Bhadoria, Yogesh Singh Chauhan, Amit Agarwal, Somnath Bhowmick

Abstract: Two dimensional magnetic materials, with tunable electronic properties could lead to new spintronic, magnetic and magneto-optic applications. Here, we explore intrinsic magnetic ordering in two dimensional monolayers of transition metal tri-halides (MX$_3$, M = V, Cr, Mn, Fe and Ni, and X = F, Cl, Br and I), using density functional theory. We find that other than FeX$_3$ family which has an anti-… ▽ More Two dimensional magnetic materials, with tunable electronic properties could lead to new spintronic, magnetic and magneto-optic applications. Here, we explore intrinsic magnetic ordering in two dimensional monolayers of transition metal tri-halides (MX$_3$, M = V, Cr, Mn, Fe and Ni, and X = F, Cl, Br and I), using density functional theory. We find that other than FeX$_3$ family which has an anti-ferromagnetic ground state, rest of the trihalides are ferromagnetic. Amongst these the VX$_3$ and NiX$_3$ family are found to have the highest magnetic transition temperature, beyond the room temperature. In terms of electronic properties, the tri-halides of Mn and Ni are either half metals or Dirac half metals, while the tri-halides of V, Fe and Cr are insulators. Among all the trihalides studied in this paper, we find the existence of very clean spin polarized Dirac half metallic state in MnF$_3$, MnCl$_3$, MnBr$_3$, NiF$_3$ and NiCl$_3$. These spin polarized Dirac half metals will be immensely useful for spin-current generation and other spintronic applications. △ Less

Submitted 31 May, 2019; originally announced May 2019.

Journal ref: Journal of Magnetism and Magnetic Materials (2019)

Interlayer decoupling in twisted bilayers of $β$-phosphorus and arsenic: a computational study

Authors: Shantanu Agnihotri, Maneesh Kumar, Yogesh Singh Chauhan, Amit Agarwal, Somnath Bhowmick

Abstract: We investigate magnetism and band structure engineering in Moiré superlattice of blue phosphorus ($β$-P) and grey arsenene ($β$-As) bilayers, using \textit{ab initio} calculations. The electronic states near the valence and conduction band edges have significant $p_z$ character in both the bilayers. Thus, twisting the layers significantly reduce the interlayer orbital overlap, leading to a decreas… ▽ More We investigate magnetism and band structure engineering in Moiré superlattice of blue phosphorus ($β$-P) and grey arsenene ($β$-As) bilayers, using \textit{ab initio} calculations. The electronic states near the valence and conduction band edges have significant $p_z$ character in both the bilayers. Thus, twisting the layers significantly reduce the interlayer orbital overlap, leading to a decrease in the binding energy (up to $\sim33\%$) and an increase in interlayer distance (up to $\sim10\%$), compared to the most stable AA-stacking. This interlayer decoupling also results in a notable increase (up to $\sim$25-50\%) of the bandgap of twisted bilayers, with the valance band edge becoming relatively flat with van-Hove singularities in the density of states. Thus, hole do** induces a Stoner instability, leading to ferromagnetic ground state, which is more robust in Moiré superlattices, than that of AA-stacked $β$-P and $β$-As. △ Less

Submitted 15 May, 2019; originally announced May 2019.

Journal ref: FlatChem (2019)

Strain-tunable charge carrier mobility of atomically thin phosphorus allotropes

Authors: Achintya Priydarshi, Yogesh Singh Chauhan, Somnath Bhowmick, Amit Agarwal

Abstract: We explore the impact of strain on charge carrier mobility of monolayer $α$, $β$, $γ$ and $δ$-P, the four well known atomically thin allotropes of phosphorus, using density functional theory. Owing to the highly anisotropic band dispersion, the charge carrier mobility of the pristine allotropes is significantly higher (more than 5 times in some cases) in one of the principal directions (zigzag or… ▽ More We explore the impact of strain on charge carrier mobility of monolayer $α$, $β$, $γ$ and $δ$-P, the four well known atomically thin allotropes of phosphorus, using density functional theory. Owing to the highly anisotropic band dispersion, the charge carrier mobility of the pristine allotropes is significantly higher (more than 5 times in some cases) in one of the principal directions (zigzag or armchair) as compared to the other. Uniaxial strain (upto 6% compressive/tensile) leads to bandgap alteration in each of the allotropes, especially a direct to indirect bandgap semiconductor transition in $γ$-P and a complete closure of the bandgap in $γ$ and $δ$-P. We find that the charge carrier mobility is enhanced typically by a factor of $\approx 5-10$ in all the allotropes due to uniaxial strain; notably among them a $\approx 250$ (30) times increase of the hole (electron) mobility along the armchair (zigzag) direction is observed in $β$-P ($γ$-P) under a compressive strain, acting in the armchair direction. Interestingly, the preferred electronic conduction direction can also be changed in case of $α$ and $γ$-P, by applying strain. △ Less

Submitted 5 March, 2018; originally announced March 2018.

Comments: 9 pages and 6 figures; To appear in Phys. Rev. B

Anisotropic plasmons, excitons and electron energy loss spectroscopy of phosphorene

Authors: Barun Ghosh, Piyush Kumar, Anmol Thakur, Yogesh Singh Chauhan, Somnath Bhowmick, Amit Agarwal

Abstract: In this article, we explore the anisotropic electron energy loss spectrum (EELS) in monolayer phosphorene based on ab-initio time dependent density functional theory calculations. Similar to black phosphorous, the EELS of undoped monolayer phosphorene is characterized by anisotropic excitonic peaks for energies in vicinity of the bandgap, and by interband plasmon peaks for higher energies. On dopi… ▽ More In this article, we explore the anisotropic electron energy loss spectrum (EELS) in monolayer phosphorene based on ab-initio time dependent density functional theory calculations. Similar to black phosphorous, the EELS of undoped monolayer phosphorene is characterized by anisotropic excitonic peaks for energies in vicinity of the bandgap, and by interband plasmon peaks for higher energies. On do**, an additional intraband plasmon peak also appears for energies within the bandgap. Similar to other two dimensional systems, the intraband plasmon peak disperses as $ω_{\rm pl} \propto \sqrt{q}$ in both the zigzag and armchair directions in the long wavelength limit, and deviates for larger wavevectors. The anisotropy of the long wavelength plasmon intraband dispersion is found to be inversely proportional to the square root of the ratio of the effective masses: $ω_{\rm pl}(q \hat{y})/ω_{\rm pl}(q \hat{x}) = \sqrt{m_x/m_y}$. △ Less

Submitted 22 March, 2017; originally announced March 2017.

Comments: 10+ pages with 8 figures

Journal ref: Phys. Rev. B 96, 035422 (2017)

Thickness and electric field dependent polarizability and dielectric constant in phosphorene

Authors: Piyush Kumar, B. S. Bhadoria, Sanjay Kumar, Somnath Bhowmick, Yogesh Singh Chauhan, Amit Agarwal

Abstract: Based on extensive first principle calculations, we explore the thickness dependent effective di- electric constant and slab polarizability of few layer black phosphorene. We find that the dielectric constant in ultra-thin phosphorene is thickness dependent and it can be further tuned by applying an out of plane electric field. The decreasing dielectric constant with reducing number of layers of p… ▽ More Based on extensive first principle calculations, we explore the thickness dependent effective di- electric constant and slab polarizability of few layer black phosphorene. We find that the dielectric constant in ultra-thin phosphorene is thickness dependent and it can be further tuned by applying an out of plane electric field. The decreasing dielectric constant with reducing number of layers of phosphorene, is a direct consequence of the lower permittivity of the surface layers and the in- creasing surface to volume ratio. We also show that the slab polarizability depends linearly on the number of layers, implying a nearly constant polarizability per phosphorus atom. Our calculation of the thickness and electric field dependent dielectric properties will be useful for designing and interpreting transport experiments in gated phosphorene devices, wherever electrostatic effects such as capacitance, charge screening etc. are important. △ Less

Submitted 23 March, 2016; v1 submitted 29 February, 2016; originally announced February 2016.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. B 93, 195428 (2016)

Effective Do** of Monolayer Phosphorene by Surface Adsorption of Atoms for Electronic and Spintronic Applications

Authors: Priyank Rastogi, Sanjay Kumar, Somnath Bhowmick, Amit Agarwal, Yogesh Singh Chauhan

Abstract: We study the effect of surface adsorption of 27 different adatoms on the electronic and magnetic properties of monolayer black phosphorus using density functional theory. Choosing a few representative elements from each group, ranging from alkali metals (group I) to halogens (group VII), we calculate the band structure, density of states, magnetic moment and effective mass for the energetically mo… ▽ More We study the effect of surface adsorption of 27 different adatoms on the electronic and magnetic properties of monolayer black phosphorus using density functional theory. Choosing a few representative elements from each group, ranging from alkali metals (group I) to halogens (group VII), we calculate the band structure, density of states, magnetic moment and effective mass for the energetically most stable location of the adatom on monolayer phosphorene. We predict that group I metals (Li, Na, K), and group III adatoms (Al, Ga, In) are effective in enhancing the n-type mobile carrier density, with group III adatoms resulting in lower effective mass of the electrons, and thus higher mobilities. Furthermore we find that the adatoms of transition metals Ti and Fe, produce a finite magnetic moment (1.87 and 2.31 $μ_B$) in monolayer phosphorene, with different band gap and electronic effective masses (and thus mobilities), which approximately differ by a factor of 10 for spin up and spin down electrons opening up the possibility for exploring spintronic applications. △ Less

Submitted 7 August, 2015; v1 submitted 14 March, 2015; originally announced March 2015.

Comments: 7 pages, 4 figures and 1 table; revised version

New Julia and Mandelbrot Sets for Jungck Ishikawa Iterates

Authors: Suman Joshi, Dr. Yashwant Singh Chauhan, Dr. Ashish Negi

Abstract: The generation of fractals and study of the dynamics of polynomials is one of the emerging and interesting field of research nowadays. We introduce in this paper the dynamics of polynomials z^ n - z + c = 0 for n>=2 and applied Jungck Ishikawa Iteration to generate new Relative Superior Mandelbrot sets and Relative Superior Julia sets. In order to solve this function by Jungck type iterative schem… ▽ More The generation of fractals and study of the dynamics of polynomials is one of the emerging and interesting field of research nowadays. We introduce in this paper the dynamics of polynomials z^ n - z + c = 0 for n>=2 and applied Jungck Ishikawa Iteration to generate new Relative Superior Mandelbrot sets and Relative Superior Julia sets. In order to solve this function by Jungck type iterative schemes, we write it in the form of Sz = Tz, where the function T, S are defined as Tz = z^ n + c and Sz = z. Only mathematical explanations are derived by applying Jungck Ishikawa Iteration for polynomials in the literature but in this paper we have generated Relative Mandelbrot sets and Relative Julia sets. △ Less

Submitted 3 April, 2014; originally announced April 2014.

Comments: 8 pages,18 tables,18 charts,18 figures Published with International Journal of Computer Trends and Technology (IJCTT)