Persistence of structural distortion and bulk band Rashba splitting in SnTe above its ferroelectric critical temperature
Authors:
Frédéric Chassot,
Aki Pulkkinen,
Geoffroy Kremer,
Tetiana Zakusylo,
Gauthier Krizman,
Mahdi Hajlaoui,
J. Hugo Dil,
Juraj Krempaský,
Ján Minár,
Gunther Springholz,
Claude Monney
Abstract:
The ferroelectric semiconductor $α$-SnTe has been regarded as a topological crystalline insulator and the dispersion of its surface states has been intensively measured with angle-resolved photoemission spectroscopy (ARPES) over the last decade. However, much less attention has been given to the impact of the ferroelectric transition on its electronic structure, and in particular on its bulk state…
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The ferroelectric semiconductor $α$-SnTe has been regarded as a topological crystalline insulator and the dispersion of its surface states has been intensively measured with angle-resolved photoemission spectroscopy (ARPES) over the last decade. However, much less attention has been given to the impact of the ferroelectric transition on its electronic structure, and in particular on its bulk states. Here, we investigate the low-energy electronic structure of $α$-SnTe with ARPES and follow the evolution of the bulk-state Rashba splitting as a function of temperature, across its ferroelectric critical temperature of about $T_c\sim 110$ K. Unexpectedly, we observe a persistent band splitting up to room temperature, which is consistent with an order-disorder contribution to the phase transition that requires the presence of fluctuating local dipoles above $T_c$. We conclude that no topological surface state can occur at the (111) surface of SnTe, at odds with recent literature.
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Submitted 31 August, 2023;
originally announced August 2023.
