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Dirac surface states in superconductors: a dual topological proximity effect
Authors:
Nicholas Sedlmayr,
E. W. Goodwin,
Michael Gottschalk,
Ian M. Dayton,
Can Zhang,
Erik Huemiller,
Reza Loloee,
Thomas C. Chasapis,
Maryam Salehi,
Nikesh Koirala,
Mercouri G. Kanatzidis,
Seongshik Oh,
D. J. Van Harlingen,
Alex Levchenko,
S. H. Tessmer
Abstract:
In this paper we present scanning tunneling microscopy of Bi$_2$Se$_3$ with superconducting Nb deposited on the surface. We find that the topologically protected surface states of the Bi$_2$Se$_3$ leak into the superconducting over-layer, suggesting a dual topological proximity effect. Coupling between theses states and the Nb states leads to an effective pairing mechanism for the surface states,…
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In this paper we present scanning tunneling microscopy of Bi$_2$Se$_3$ with superconducting Nb deposited on the surface. We find that the topologically protected surface states of the Bi$_2$Se$_3$ leak into the superconducting over-layer, suggesting a dual topological proximity effect. Coupling between theses states and the Nb states leads to an effective pairing mechanism for the surface states, leading to a modified model for a topological superconductor in these systems. This model is consistent with fits between the experimental data and the theory.
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Submitted 9 April, 2020; v1 submitted 31 May, 2018;
originally announced May 2018.
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Understanding Bulk Defects in Topological Insulators from Nuclear-Spin Interactions
Authors:
Dimitrios Koumoulis,
Belinda Leung,
Thomas C. Chasapis,
Robert Taylor,
Daniel King Jr.,
Mercouri G. Kanatzidis,
Louis-S. Bouchard
Abstract:
Non-invasive local probes are needed to characterize bulk defects in binary and ternary chalcogenides. These defects contribute to the non-ideal behavior of topological insulators. We have studied bulk electronic properties via $^{125}$Te NMR in Bi$_2$Te$_3$, Sb$_2$Te$_3$, Bi$_{0.5}$Sb$_{1.5}$Te$_3$, Bi$_2$Te$_2$Se and Bi$_2$Te$_2$S. A distribution of defects gives rise to asymmetry in the powder…
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Non-invasive local probes are needed to characterize bulk defects in binary and ternary chalcogenides. These defects contribute to the non-ideal behavior of topological insulators. We have studied bulk electronic properties via $^{125}$Te NMR in Bi$_2$Te$_3$, Sb$_2$Te$_3$, Bi$_{0.5}$Sb$_{1.5}$Te$_3$, Bi$_2$Te$_2$Se and Bi$_2$Te$_2$S. A distribution of defects gives rise to asymmetry in the powder lineshapes. We show how the Knight shift, line shape and spin-lattice relaxation report on carrier density, spin-orbit coupling and phase separation in the bulk. The present study confirms that the ordered ternary compound Bi$_2$Te$_2$Se is the best TI candidate material at the present time. Our results, which are in good agreement with transport and ARPES studies, help establish the NMR probe as a valuable method to characterize the bulk properties of these materials.
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Submitted 21 June, 2015;
originally announced June 2015.
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Site-Specific Contributions to the Band Inversion in a Topological Crystalline Insulator
Authors:
Dimitrios Koumoulis,
Thomas Christos Chasapis,
Belinda Leung,
Robert E. Taylor,
Costas C. Stoumpos,
Nicholas P. Calta,
Mercouri G. Kanatzidis,
Louis-Serge Bouchard
Abstract:
In a topological crystalline insulator (TCI) the inversion of the bulk valence and conduction bands is a necessary condition to observe surface metallic states. Solid solutions of Pb$_{1-x}$Sn$_x$Te have been shown to be TCI, where band inversion occurs as a result of the band gap evolution upon alloying with Sn. The origins of this band inversion remain unclear. Herein the role of Sn insertion in…
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In a topological crystalline insulator (TCI) the inversion of the bulk valence and conduction bands is a necessary condition to observe surface metallic states. Solid solutions of Pb$_{1-x}$Sn$_x$Te have been shown to be TCI, where band inversion occurs as a result of the band gap evolution upon alloying with Sn. The origins of this band inversion remain unclear. Herein the role of Sn insertion into the PbTe matrix is investigated for the $p$-type Pb$_{1-x}$Sn$_x$Te series with $x$ = 0, 0.35, 0.60, and 1.00 via nuclear magnetic resonance (NMR) and transport measurements. $^{207}$Pb, $^{119}$Sn, and $^{125}$Te line shapes, spin-lattice relaxation rates, and Knight shifts provide site-specific characterization of the electronic band structure. This probe of the electronic band structure shows that the band inversion is unaffected by lattice distortions but related to spatial electronic inhomogeneities formed by Sn incorporation into the PbTe matrix. Strong relativistic effects are found to be responsible for the band inversion, regardless of carrier type and concentration, suggesting a novel interpretation of the band gap evolution with composition. The temperature dependences of the NMR parameters reveal a negative temperature coefficient of the direct gap for SnTe and positive coefficient for PbTe.
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Submitted 21 June, 2015;
originally announced June 2015.
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Two Band Model Interpretation of the p to n Transition in Ternary Tetradymite Topological Insulators
Authors:
T. C. Chasapis,
D. Koumoulis,
B. Leung,
N. P. Calta,
S. -H Lo,
V. P. Dravid,
L. S. Bouchard,
M. G. Kanatzidis
Abstract:
The requirement for large bulk resistivity in topological insulators has led to the design of complex ternary and quaternary phases with balanced donor and acceptor levels. A common feature of the optimized phases is that they lie close to the p to n transition. The tetradymite Bi2Te3_xSex system exhibits minimum bulk conductance at the ordered composition Bi2Te2Se. By combining local and integral…
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The requirement for large bulk resistivity in topological insulators has led to the design of complex ternary and quaternary phases with balanced donor and acceptor levels. A common feature of the optimized phases is that they lie close to the p to n transition. The tetradymite Bi2Te3_xSex system exhibits minimum bulk conductance at the ordered composition Bi2Te2Se. By combining local and integral measurements of the density of states, we find that the point of minimum electrical conductivity at x=1.0 where carriers change from hole-like to electron-like is characterized by conductivity of the mixed type. Our experimental findings, which are interpreted within the framework of a two band model for the different carrier types, indicate that the mixed state originates from different type of native defects that strongly compensate at the crossover point.
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Submitted 17 June, 2015;
originally announced June 2015.
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Understanding the role and interplay of heavy hole and light hole valence bands in the thermoelectric properties of PbSe
Authors:
Thomas C. Chasapis,
Yeseul Lee,
Euripides Hatzikraniotis,
Konstantinos M. Paraskevopoulos,
Hang Chi,
Ctirad Uher,
Mercouri G. Kanatzidis
Abstract:
The thermoelectric properties of PbSe have significantly improved in recent years reaching figures of merit ZT 1.6. The transport properties of the hole doped high temperature thermoelectric material PbSe are particularly interesting and play a key role in this. Here they were analyzed over a wide temperature and hole concentration ranges. The special features observed in the variation of the expe…
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The thermoelectric properties of PbSe have significantly improved in recent years reaching figures of merit ZT 1.6. The transport properties of the hole doped high temperature thermoelectric material PbSe are particularly interesting and play a key role in this. Here they were analyzed over a wide temperature and hole concentration ranges. The special features observed in the variation of the experimental Seebeck coefficient, and Hall coefficient can be accounted for within the framework of a two band model. Two valence bands separated by a temperature dependent energy offset are considered. The extremum of the light hole band has a density of states mass 0.27mo at room temperature. It is non-parabolic and anisotropic and can be described by the Kane model. The extremum of the heavy hole band is isotropic and parabolic with a much larger density of states mass 2.5mo. We find that for heavily doped compositions the high mass band contributes the Seebeck coefficient even at room temperature. With rising temperature holes are transferred from the light hole to the heavy hole branch giving rise to the anomalous temperature dependent Hall coefficient which is found peaked near 650 K.
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Submitted 3 February, 2015;
originally announced February 2015.
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NMR Probe of Metallic States in Nanoscale Topological Insulators
Authors:
Dimitrios Koumoulis,
Thomas C. Chasapis,
Robert E. Taylor,
Michael P. Lake,
Danny King,
Nanette N. Jarenwattananon,
Gregory A. Fiete,
Mercouri G. Kanatzidis,
Louis-S. Bouchard
Abstract:
A 125Te NMR study of bismuth telluride nanoparticles as function of particle size revealed that the spin-lattice relaxation is enhanced below 33 nm, accompanied by a transition of NMR spectra from single to bimodal regime. The satellite peak features a negative Knight shift and higher relaxivity, consistent with core polarization from p-band carriers. Whereas nanocrystals follow a Korringa law in…
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A 125Te NMR study of bismuth telluride nanoparticles as function of particle size revealed that the spin-lattice relaxation is enhanced below 33 nm, accompanied by a transition of NMR spectra from single to bimodal regime. The satellite peak features a negative Knight shift and higher relaxivity, consistent with core polarization from p-band carriers. Whereas nanocrystals follow a Korringa law in the range 140-420K, micrometer particles do so only below 200K. The results reveal increased metallicity of these nanoscale topological insulators in the limit of higher surface-to-volume ratios.
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Submitted 13 January, 2013;
originally announced January 2013.
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Antimony arsenide: Chemical ordering in the compound SbAs
Authors:
Daniel P. Shoemaker,
Thomas C. Chasapis,
Dat Do,
Melanie C. Francisco,
Duck Young Chung,
S. D. Mahanti,
Anna Llobet,
Mercouri G. Kanatzidis
Abstract:
The semimetallic Group V elements display a wealth of correlated electron phenomena due to a small indirect band overlap that leads to relatively small, but equal, numbers of holes and electrons at the Fermi energy with high mobility. Their electronic bonding characteristics produce a unique crystal structure, the rhombohedral A7 structure, which accommodates lone pairs on each site. Here we show…
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The semimetallic Group V elements display a wealth of correlated electron phenomena due to a small indirect band overlap that leads to relatively small, but equal, numbers of holes and electrons at the Fermi energy with high mobility. Their electronic bonding characteristics produce a unique crystal structure, the rhombohedral A7 structure, which accommodates lone pairs on each site. Here we show that the A7 structure can display chemical ordering of Sb and As, which were previously thought to mix randomly. Our structural characterization of the compound SbAs is performed by single-crystal and high-resolution synchrotron x-ray diffraction, and neutron and x-ray pair distribution function analysis. All least-squares refinements indicate ordering of Sb and As, resulting in a GeTe-type structure without inversion symmetry. High-temperature diffraction studies reveal an ordering transition around 550 K. Transport and infrared reflectivity measurements, along with first-principles calculations, confirm that SbAs is a semimetal, albeit with a direct band separation larger than that of Sb or As. Because even subtle substitutions in the semimetals, notably Bi_{1-x}Sb_x, can open semiconducting energy gaps, a further investigation of the interplay between chemical ordering and electronic structure on the A7 lattice is warranted.
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Submitted 6 October, 2012;
originally announced October 2012.
