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Atomic scale imaging of the negative charge induced by a single vanadium dopant atom in monolayer WSe$_2$ using 4D-STEM
Authors:
D. Dosenovic,
K. Sharma,
S. Dechamps,
J. -L. Rouviere,
Y. Lu,
A. Mordant,
M. den Hertog,
L. Genovese,
S. M. -M. Dubois,
J. -C. Charlier,
M. Jamet,
A. Marty,
H. Okuno
Abstract:
There has been extensive activity exploring the do** of semiconducting two-dimensional (2D) transition metal dichalcogenides in order to tune their electronic and magnetic properties. The outcome of do** depends on various factors, including the intrinsic properties of the host material, the nature of the dopants used, their spatial distribution as well as their interactions with other types o…
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There has been extensive activity exploring the do** of semiconducting two-dimensional (2D) transition metal dichalcogenides in order to tune their electronic and magnetic properties. The outcome of do** depends on various factors, including the intrinsic properties of the host material, the nature of the dopants used, their spatial distribution as well as their interactions with other types of defects. A thorough atomic-level analysis is essential to fully understand these mechanisms. In this work, vanadium doped WSe$_2$ monolayer grown by molecular beam epitaxy is investigated using four-dimensional scanning transmission electron microscopy (4D-STEM). Through center of mass-based reconstruction, atomic scale maps are produced, allowing the visualization of both the electric field and the electrostatic potential around individual V atoms. To provide quantitative insights, these results are successfully compared with multislice image simulations based on ab initio calculations, accounting for lens aberrations. Finally, a negative charge around the V dopants is detected as a drop in the electrostatic potential, unambiguously demonstrating that 4D-STEM can be used to detect and to accurately analyze single dopant charge states in semiconducting 2D materials.
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Submitted 13 October, 2023;
originally announced October 2023.
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Non-identical moiré twins in bilayer graphene
Authors:
E. Arrighi,
V. -H. Nguyen,
M. Di Luca,
G. Maffione,
Y. Hong,
L. Farrar,
K. Watanabe,
T. Taniguchi,
D. Mailly,
J. -C. Charlier,
R. Ribeiro-Palau
Abstract:
The superlattice obtained by aligning a monolayer graphene and boron nitride (BN) inherits from the hexagonal lattice a sixty degrees periodicity with the layer alignment. It implies that, in principle, the properties of the heterostructure must be identical for 0$^{\circ}$ and 60$^{\circ}$ of layer alignment. Here, we demonstrate, using dynamically rotatable van der Waals heterostructures, that t…
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The superlattice obtained by aligning a monolayer graphene and boron nitride (BN) inherits from the hexagonal lattice a sixty degrees periodicity with the layer alignment. It implies that, in principle, the properties of the heterostructure must be identical for 0$^{\circ}$ and 60$^{\circ}$ of layer alignment. Here, we demonstrate, using dynamically rotatable van der Waals heterostructures, that the moiré superlattice formed in a bilayer graphene/BN has different electronic properties at 0$^{\circ}$ and 60$^{\circ}$ of alignment. Although the existence of these non-identical moiré twins is explained by different relaxation of the atomic structures for each alignment, the origin of the observed valley Hall effect remains to be explained. A simple Berry curvature argument do not hold to explain the hundred and twenty degrees periodicity of this observation. Our results highlight the complexity of the interplay between mechanical and electronic properties on moiré structure and the importance of taking into account atomic structure relaxation to understand its electronic properties.
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Submitted 12 July, 2023; v1 submitted 3 May, 2022;
originally announced May 2022.
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Electronic properties of twisted multilayer graphene
Authors:
V. Hung Nguyen,
Trinh X. Hoang,
J. -C. Charlier
Abstract:
Twisted bilayer graphene displays many fascinating properties that can be tuned by varying the relative angle (also called twist angle) between its monolayers. As a remarkable feature, both the electronic flat bands and the corresponding strong electron localization have been obtained at a specific "magic" angle ($\sim 1.1^{\circ}$), leading to the observation of several strongly correlated electr…
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Twisted bilayer graphene displays many fascinating properties that can be tuned by varying the relative angle (also called twist angle) between its monolayers. As a remarkable feature, both the electronic flat bands and the corresponding strong electron localization have been obtained at a specific "magic" angle ($\sim 1.1^{\circ}$), leading to the observation of several strongly correlated electronic phenomena. Such a discovery has hence inspired the creation of a novel research field called twistronics, i.e., aiming to explore novel physical properties in vertically stacked 2D structures when tuning the twist angle between the related layers. In this paper, a comprehensive and systematic study related to the electronic properties of twisted multilayer graphene (TMG) is presented based on atomistic calculations. The dependence of both the global and the local electronic quantities on the twist angle and on the stacking configuration are analyzed, fully taking into account atomic reconstruction effects. Consequently, the correlation between structural and electronic properties are clarified, thereby highlighting the shared characteristics and differences between various TMG systems as well as providing a comprehensive and essential overview. On the basis of these investigations, possibilities to tune the electronic properties are discussed, allowing for further developments in the field of twistronics.
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Submitted 17 March, 2022;
originally announced March 2022.
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Electronic localization in small-angle twisted bilayer graphene
Authors:
V. Hung Nguyen,
D. Paszko,
M. Lamparski,
B. Van Troeye,
V. Meunier,
J. -C. Charlier
Abstract:
Close to a magical angle, twisted bilayer graphene (TBLG) systems exhibit isolated flat electronic bands and, accordingly, strong electron localization. TBLGs have hence been ideal platforms to explore superconductivity, correlated insulating states, magnetism, and quantized anomalous Hall states in reduced dimension. Below a threshold twist angle ($\sim$ $1.1^\circ$), the TBLG superlattice underg…
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Close to a magical angle, twisted bilayer graphene (TBLG) systems exhibit isolated flat electronic bands and, accordingly, strong electron localization. TBLGs have hence been ideal platforms to explore superconductivity, correlated insulating states, magnetism, and quantized anomalous Hall states in reduced dimension. Below a threshold twist angle ($\sim$ $1.1^\circ$), the TBLG superlattice undergoes lattice reconstruction, leading to a periodic moiré structure which presents a marked atomic corrugation. Using a tight-binding framework, this research demonstrates that superlattice reconstruction affects significantly the electronic structure of small-angle TBLGs. The first magic angle at $\sim$ $1.1^\circ$ is found to be a critical case presenting globally maximized electron localization, thus separating reconstructed TBLGs into two classes with clearly distinct electronic properties. While low-energy Dirac fermions are still preserved at large twist angles $> 1.1 ^\circ$, small-angle ($\lesssim 1.1^\circ$) TBLG systems present common features such as large spatial variation and strong electron localization observed in unfavorable AA stacking regions. However, for small twist angles below $1.1 ^\circ$, the relative contribution of the local AA regions is progressively reduced, thus precluding the emergence of further magic angles, in very good agreement with existing experimental evidence.
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Submitted 8 May, 2021; v1 submitted 10 February, 2021;
originally announced February 2021.
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Strain Modulated Superlattices in Graphene
Authors:
R. Banerjee,
V. -H. Nguyen,
T. Granzier-Nakajima,
L. Pabbi,
A. Lherbier,
A. R. Binion,
J. -C. Charlier,
M. Terrones,
E. W. Hudson
Abstract:
Strain engineering of graphene takes advantage of one of the most dramatic responses of Dirac electrons enabling their manipulation via strain-induced pseudo-magnetic fields. Numerous theoretically proposed devices, such as resonant cavities and valley filters, as well as novel phenomena, such as snake states, could potentially be enabled via this effect. These proposals, however, require strong,…
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Strain engineering of graphene takes advantage of one of the most dramatic responses of Dirac electrons enabling their manipulation via strain-induced pseudo-magnetic fields. Numerous theoretically proposed devices, such as resonant cavities and valley filters, as well as novel phenomena, such as snake states, could potentially be enabled via this effect. These proposals, however, require strong, spatially oscillating magnetic fields while to date only the generation and effects of pseudo-gauge fields which vary at a length scale much larger than the magnetic length have been reported. Here we create a periodic pseudo-gauge field profile using periodic strain that varies at the length scale comparable to the magnetic length and study its effects on Dirac electrons. A periodic strain profile is achieved by pulling on graphene with extreme (>10%) strain and forming nanoscale ripples, akin to a plastic wrap pulled taut at its edges. Combining scanning tunneling microscopy and atomistic calculations, we find that spatially oscillating strain results in a new quantization different from the familiar Landau quantization observed in previous studies. We also find that graphene ripples are characterized by large variations in carbon-carbon bond length, directly impacting the electronic coupling between atoms, which within a single ripple can be as different as in two different materials. The result is a single graphene sheet that effectively acts as an electronic superlattice. Our results thus also establish a novel approach to synthesize an effective 2D lateral heterostructure - by periodic modulation of lattice strain.
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Submitted 23 January, 2020; v1 submitted 25 March, 2019;
originally announced March 2019.
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Electrical conductivity measured in atomic carbon chains
Authors:
O. Cretu,
A. R. Botello-Mendez,
I. Janowska,
C. Pham-Huu,
J. -C. Charlier,
F. Banhart
Abstract:
The first electrical conductivity measurements of monoatomic carbon chains are reported in this study. The chains were obtained by unraveling carbon atoms from graphene ribbons while an electrical current flowed through the ribbon and, successively, through the chain. The formation of the chains was accompanied by a characteristic drop in the electrical conductivity. The conductivity of carbon cha…
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The first electrical conductivity measurements of monoatomic carbon chains are reported in this study. The chains were obtained by unraveling carbon atoms from graphene ribbons while an electrical current flowed through the ribbon and, successively, through the chain. The formation of the chains was accompanied by a characteristic drop in the electrical conductivity. The conductivity of carbon chains was much lower than previously predicted for ideal chains. First-principles calculations using both density functional and many-body perturbation theory show that strain in the chains determines the conductivity in a decisive way. Indeed, carbon chains are always under varying non-zero strain that transforms its atomic structure from cumulene to polyyne configuration, thus inducing a tunable band gap. The modified electronic structure and the characteristics of the contact to the graphitic periphery explain the low conductivity of the locally constrained carbon chain.
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Submitted 21 February, 2013;
originally announced February 2013.
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Bending modes, elastic constants and mechanical stability of graphitic systems
Authors:
G. Savini,
Y. J. Dappe,
S. Öberg,
J. -C. Charlier,
M. I. Katsnelson,
A. Fasolino
Abstract:
The thermodynamic and mechanical properties of graphitic systems are strongly dependent on the shear elastic constant C44. Using state-of-the-art density functional calculations, we provide the first complete determination of their elastic constants and exfoliation energies. We show that stacking misorientations lead to a severe lowering of C44 of at least one order of magnitude. The lower exfolia…
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The thermodynamic and mechanical properties of graphitic systems are strongly dependent on the shear elastic constant C44. Using state-of-the-art density functional calculations, we provide the first complete determination of their elastic constants and exfoliation energies. We show that stacking misorientations lead to a severe lowering of C44 of at least one order of magnitude. The lower exfoliation energy and the lower C44 (more bending modes) suggest that flakes with random stacking should be easier to exfoliate than the ones with perfect or rhombohedral stacking. We also predict ultralow friction behaviour in turbostratic graphitic systems.
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Submitted 21 August, 2010;
originally announced August 2010.
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Spin-Transport in Defective Graphene Nanoribbons
Authors:
S. M. -M. Dubois,
G. -M. Rignanese,
J. -C. Charlier
Abstract:
Using first-principles calculations, the effect of magnetic point defects (vacancy and adatom) is investigated in zigzag graphene nanoribbons. The structural, electronic, and spin-transport properties are studied. While pristine ribbons display anti-parallel spin states at their edges, the defects are found to perturb this coupling. The introduction of a vacancy drastically reduces the energy di…
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Using first-principles calculations, the effect of magnetic point defects (vacancy and adatom) is investigated in zigzag graphene nanoribbons. The structural, electronic, and spin-transport properties are studied. While pristine ribbons display anti-parallel spin states at their edges, the defects are found to perturb this coupling. The introduction of a vacancy drastically reduces the energy difference between parallel and anti-parallel spin orientations, though the latter is still favored. Moreover, the local magnetic moment of the defect is screened by the edges so that the total magnetic moment is quite small. In contrast, when an adatom is introduced, the parallel spin orientation is preferred and the local magnetic moment of the defect adds up to the contributions of the edges. Furthermore, a spin-polarized transmission is observed at the Fermi energy, suggesting the use of such a defective graphene nanoribbon as spin-valve device.
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Submitted 26 November, 2008;
originally announced November 2008.
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Room temperature Peierls distortion in small radius nanotubes
Authors:
D. Connetable,
G. -M. Rignanese,
J. -C. Charlier,
Xavier Blase
Abstract:
By means of {\it ab initio} simulations, we investigate the phonon band structure and electron-phonon coupling in small 4-Ådiameter nanotubes. We show that both the C(5,0) and C(3,3) tubes undergo above room temperature a Peierls transition mediated by an acoustical long-wavelength and an optical $q=2k_F$ phonons respectively. In the armchair geometry, we verify that the electron-phonon coupling…
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By means of {\it ab initio} simulations, we investigate the phonon band structure and electron-phonon coupling in small 4-Ådiameter nanotubes. We show that both the C(5,0) and C(3,3) tubes undergo above room temperature a Peierls transition mediated by an acoustical long-wavelength and an optical $q=2k_F$ phonons respectively. In the armchair geometry, we verify that the electron-phonon coupling parameter $λ$ originates mainly from phonons at $q=2k_F$ and is strongly enhanced when the diameter decreases. These results question the origin of superconductivity in small diameter nanotubes.
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Submitted 6 January, 2005;
originally announced January 2005.
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Nonlinear behavior in the Thermopower of Doped Carbon Nanotubes Due to Strong, Localized States
Authors:
Y. -M Choi,
D. -S. Lee,
R. Czerw,
P. -W. Chiu,
N. Grobert,
M. Terrones,
M. Reyes-Reyes,
H. Terrones,
J. -C. Charlier,
P. M. Ajayan,
S. Roth,
D. L. Carroll,
Y. -W. Park
Abstract:
The temperature dependent thermoelectric power (TEP) of boron and nitrogen doped multi-walled carbon nanotube mats has been measured showing that such dopants can be used to modify the majority conduction from p-type to n-type. The TEP of boron doped nanotubes is positive, indicating hole-like carriers. In contrast, the nitrogen doped material exhibits negative TEP over the same temperature rang…
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The temperature dependent thermoelectric power (TEP) of boron and nitrogen doped multi-walled carbon nanotube mats has been measured showing that such dopants can be used to modify the majority conduction from p-type to n-type. The TEP of boron doped nanotubes is positive, indicating hole-like carriers. In contrast, the nitrogen doped material exhibits negative TEP over the same temperature range, suggesting electron-like conduction. Therefore, the TEP distinct nonlinearites are primarily due to the formation of donor and acceptor states in the B- and N- doped materials. The sharply varying density of states used in our model can be directly correlated to the scanning tunneling spectroscopy studies of these materials.
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Submitted 11 April, 2002;
originally announced April 2002.
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Identification of Electron Donor States in N-doped Carbon Nanotubes
Authors:
R. Czerw,
M. Terrones,
J. -C. Charlier,
X. Blase,
B. Foley,
R. Kamalakaran,
N. Grobert,
H. Terrones,
P. M. Ajayan,
W. Blau,
D. Tekleab,
M. Ruhle,
D. L. Carroll
Abstract:
Nitrogen doped carbon nanotubes have been synthesized using pyrolysis and characterized by Scanning Tunneling Spectroscopy and transmission electron microscopy. The doped nanotubes are all metallic and exhibit strong electron donor states near the Fermi level. Using tight-binding and ab initio calculations, we observe that pyridine-like N structures are responsible for the metallic behavior and…
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Nitrogen doped carbon nanotubes have been synthesized using pyrolysis and characterized by Scanning Tunneling Spectroscopy and transmission electron microscopy. The doped nanotubes are all metallic and exhibit strong electron donor states near the Fermi level. Using tight-binding and ab initio calculations, we observe that pyridine-like N structures are responsible for the metallic behavior and the prominent features near the Fermi level. These electron rich structures are the first example of n-type nanotubes, which could pave the way to real molecular hetero-junction devices.
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Submitted 19 November, 2000;
originally announced November 2000.
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A scaling hypothesis for corrections to total energy and stress in plane- wave based ab initio calculations
Authors:
G. -M. Rignanese,
Ph. Ghosez,
J. -C. Charlier,
J. -P. Michenaud,
X. Gonze
Abstract:
We present a new technique aimed at preventing plane-wave based total energy and stress calculations from the effect of abrupt changes in basis set size. This s cheme relies on the interpolation of energy as a function of the number of plane waves, and on a scaling hypothesis that allows to perform the interpolation for a unique reference volume. From a theoretical point of view, the new method…
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We present a new technique aimed at preventing plane-wave based total energy and stress calculations from the effect of abrupt changes in basis set size. This s cheme relies on the interpolation of energy as a function of the number of plane waves, and on a scaling hypothesis that allows to perform the interpolation for a unique reference volume. From a theoretical point of view, the new method is compared to those already pr oposed in the literature, and its more rigorous derivation is emphasized. From a practical point of view, we illustrate the importance of the correction o n different materials (Si, BaTiO3, and He) corresponding to different types of b onding, and to different k-point samplings and cut-off energies. Then, we compare the different approaches for the calculation of the lattice par ameter, the bulk modulus, and its derivative versus pressure in bulk silicon.
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Submitted 18 May, 1995; v1 submitted 16 May, 1995;
originally announced May 1995.
