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Recursive Green's functions optimized for atomistic modelling of large superlattice-based devices
Authors:
Viet-Hung Nguyen,
Jean-Christophe Charlier
Abstract:
The Green's function method is recognized to be a very powerful tool for modelling quantum transport in nanoscale electronic devices. As atomistic calculations are generally expensive, numerical methods and related algorithms have been developed accordingly to optimize their computation cost. In particular, recursive techniques have been efficiently applied within the Green's function calculation…
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The Green's function method is recognized to be a very powerful tool for modelling quantum transport in nanoscale electronic devices. As atomistic calculations are generally expensive, numerical methods and related algorithms have been developed accordingly to optimize their computation cost. In particular, recursive techniques have been efficiently applied within the Green's function calculation approach. Recently, with the discovery of Moiré materials, several attractive superlattices have been explored using these recursive Green's function techniques. However, numerical difficulty issues were reported as most of these superlattices have relatively large supercells, and consequently a huge number of atoms to be considered. In this article, improvements to solve these issues are proposed in order to keep optimizing the recursive Green's function calculations. These improvements make the electronic structure calculations feasible and efficient in modelling large superlattice-based devices. As an illustrative example, twisted bilayer graphene superlattices are computed and presented to demonstrate the efficiency of the method.
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Submitted 23 May, 2024;
originally announced May 2024.
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Quantifying the local mechanical properties of twisted double bilayer graphene
Authors:
Alessandra Canetta,
Sergio Gonzalez-Munoz,
Viet-Hung Nguyen,
Khushboo Agarwal,
Pauline de Crombrugghe de Picquendaele,
Yuanzhuo Hong,
Sambit Mohapatra,
Kenji Watanabe,
Takashi Taniguchi,
Bernard Nysten,
Benoît Hackens,
Rebeca Ribeiro-Palau,
Jean-Christophe Charlier,
Oleg Kolosov,
Jean Spièce,
Pascal Gehring
Abstract:
Nanomechanical measurements of minimally twisted van der Waals materials remained elusive despite their fundamental importance for device realisation. Here, we use Ultrasonic Force Microscopy (UFM) to locally quantify the variation of out-of-plane Young's modulus in minimally twisted double bilayer graphene (TDBG). We reveal a softening of the Young's modulus by 7\% and 17\% along single and doubl…
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Nanomechanical measurements of minimally twisted van der Waals materials remained elusive despite their fundamental importance for device realisation. Here, we use Ultrasonic Force Microscopy (UFM) to locally quantify the variation of out-of-plane Young's modulus in minimally twisted double bilayer graphene (TDBG). We reveal a softening of the Young's modulus by 7\% and 17\% along single and double domain walls, respectively. Our experimental results are confirmed by force-field relaxation models. This study highlights the strong tunability of nanomechanical properties in engineered twisted materials, and paves the way for future applications of designer 2D nanomechanical systems.
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Submitted 21 May, 2024;
originally announced May 2024.
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Guidelines for accurate and efficient calculations of mobilities in two-dimensional materials
Authors:
Jiaqi Zhou,
Samuel Poncé,
Jean-Christophe Charlier
Abstract:
Emerging two-dimensional (2D) materials bring unprecedented opportunities for electronic applications. The design of high-performance devices requires an accurate prediction of carrier mobility in 2D materials, which can be obtained using state-of-the-art $ab~initio$ calculations. However, various factors impact the computational accuracy, leading to contradictory estimations for the mobility. In…
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Emerging two-dimensional (2D) materials bring unprecedented opportunities for electronic applications. The design of high-performance devices requires an accurate prediction of carrier mobility in 2D materials, which can be obtained using state-of-the-art $ab~initio$ calculations. However, various factors impact the computational accuracy, leading to contradictory estimations for the mobility. In this work, targeting accurate and efficient $ab~initio$ calculations, transport properties in III-V monolayers are reported using the Boltzmann transport equation, and the influences of pseudopotential, quadrupole correction, Berry connection, and spin-orbit coupling (SOC) on mobilities are systematically investigated. Our findings are as follows: (1) The inclusion of semi-core states in pseudopotentials is important to obtain accurate calculations. (2) The variations induced by dynamical quadrupole and Berry connection when treating long range fields can be respectively 40% and 10%. (3) The impact of SOC can reach up to 100% for materials with multi-peak bands. Importantly, although SOC notably modifies the electronic wavefunctions, it negligibly impacts the dynamical matrices and scattering potential variations. As a result, the combination of fully-relativistic electron calculation and scalar-relativistic phonon calculation can strike a good balance between accuracy and cost. This work compares computational methodologies, providing guidelines for accurate and efficient calculations of mobilities in 2D semiconductors.
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Submitted 15 April, 2024;
originally announced April 2024.
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Thermoelectric Properties of Graphene through BN-ring Do**: A Theoretical Investigation
Authors:
Laura Caputo,
Viet-Hung Nguyen,
Jean-Christophe Charlier
Abstract:
Graphene has been widely studied for various applications due to its outstanding electrical and mechanical properties. However, its potential in thermoelectric applications has been limited by a low Seebeck coefficient and high thermal conductivity. Efforts to enhance its thermoelectric properties have involved the usage of carbon-based nanoribbons, strain engineering, and heteroatom co-do**, pa…
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Graphene has been widely studied for various applications due to its outstanding electrical and mechanical properties. However, its potential in thermoelectric applications has been limited by a low Seebeck coefficient and high thermal conductivity. Efforts to enhance its thermoelectric properties have involved the usage of carbon-based nanoribbons, strain engineering, and heteroatom co-do**, particularly with Nitrogen and/or Boron atoms. In this work, multiscale simulation approaches combining DFT calculations and semi-empirical models are used to explore the potential improvement of the thermoelectric properties via borazine (B$_3$N$_3$)-ring do**. As bandgap engineering can be obtained with this do**, the thermoelectric properties of graphene are significantly enlarged, albeit at the cost of reduced conductance. The effects observed are not only dependent on the concentration of BN within the graphene lattice but are also notably influenced by the relative rotational alignment of the BN rings. Furthermore, the effect of the distribution and rotational disorder are considered, showing reduced electronic conductance compared to the periodic case highlighting the importance of precise control over the do** parameters of BN-ring. Lastly, the thermal lattice conductance is estimated revealing a substantial reduction of up to 40$\%$ compared to pristine graphene opening up the possibility of enhancing the thermoelectric efficiency of BNC materials. The present theoretical approach highlights how BN-ring do** can refine the thermoelectric properties of 2D graphene, offering a pathway for enhancing its suitability in practical thermoelectric applications.
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Submitted 2 April, 2024;
originally announced April 2024.
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Exploring Dielectric Properties in Models of Amorphous Boron Nitride
Authors:
Thomas Galvani,
Ali K. Hamze,
Laura Caputo,
Onurcan Kaya,
Simon Dubois,
Luigi Colombo,
Viet-Hung Nguyen,
Yongwoo Shin,
Hyeon-** Shin,
Jean-Christophe Charlier,
Stephan Roche
Abstract:
We report a theoretical study of dielectric properties of models of amorphous Boron Nitride, using interatomic potentials generated by machine learning. We first perform first-principles simulations on small (about $100$ atoms in the periodic cell) sample sizes to explore the emergence of mid-gap states and its correlation with structural features. Next, by using a simplified tight-binding electro…
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We report a theoretical study of dielectric properties of models of amorphous Boron Nitride, using interatomic potentials generated by machine learning. We first perform first-principles simulations on small (about $100$ atoms in the periodic cell) sample sizes to explore the emergence of mid-gap states and its correlation with structural features. Next, by using a simplified tight-binding electronic model, we analyse the dielectric functions for complex three dimensional models (containing about $10.000$ atoms) embedding varying concentrations of ${\rm sp^{1}, sp^{2}}$ and ${\rm sp^3}$ bonds between B and N atoms. Within the limits of these methodologies, the resulting value of the zero-frequency dielectric constant is shown to be influenced by the population density of such mid-gap states and their localization characteristics. We observe nontrivial correlations between the structure-induced electronic fluctuations and the resulting dielectric constant values. Our findings are however just a first step in the quest of accessing fully accurate dielectric properties of as-grown amorphous BN of relevance for interconnect technologies and beyond.
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Submitted 18 March, 2024;
originally announced March 2024.
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Disorder-Induced Delocalization in Magic-Angle Twisted Bilayer Graphene
Authors:
Pedro Alcázar Guerrero,
Viet-Hung Nguyen,
Jorge Martínez Romeral,
Aron W. Cummings,
José-Hugo Garcia,
Jean-Christophe Charlier,
Stephan Roche
Abstract:
Flat bands in moiré systems are exciting new playgrounds for the generation and study of exotic many-body physics phenomena in low-dimensional materials. Such physics is attributed to the vanishing kinetic energy and strong spatial localization of the flat-band states. Here we use numerical simulations to examine the electronic transport properties of such flat bands in magic-angle twisted bilayer…
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Flat bands in moiré systems are exciting new playgrounds for the generation and study of exotic many-body physics phenomena in low-dimensional materials. Such physics is attributed to the vanishing kinetic energy and strong spatial localization of the flat-band states. Here we use numerical simulations to examine the electronic transport properties of such flat bands in magic-angle twisted bilayer graphene in the presence of disorder. We find that while a conventional downscaling of the mean free path with increasing disorder strength occurs at higher energies, in the flat bands the mean free path can actually increase with increasing disorder strength.This phenomenon is also captured by the disorder-dependent quantum metric, which is directly linked to the ground state localization.This disorder-induced delocalization suggests that weak disorder may have a strong impact on the exotic physics of magic-angle bilayer graphene and other related moiré systems.
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Submitted 3 June, 2024; v1 submitted 16 January, 2024;
originally announced January 2024.
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Klein tunneling degradation and enhanced Fabry-Pérot interference in graphene/h-BN moiré-superlattice devices
Authors:
Viet-Anh Tran,
Viet-Hung Nguyen,
Jean-Christophe Charlier
Abstract:
Hexagonal boron-nitride (h-BN) provides an ideal substrate for supporting graphene devices to achieve fascinating transport properties, such as Klein tunneling, electron optics and other novel quantum transport phenomena. However, depositing graphene on h-BN creates moiré superlattices, whose electronic properties can be significantly manipulated by controlling the lattice alignment between layers…
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Hexagonal boron-nitride (h-BN) provides an ideal substrate for supporting graphene devices to achieve fascinating transport properties, such as Klein tunneling, electron optics and other novel quantum transport phenomena. However, depositing graphene on h-BN creates moiré superlattices, whose electronic properties can be significantly manipulated by controlling the lattice alignment between layers. In this work, the effects of these moiré structures on the transport properties of graphene are investigated using atomistic simulations. At large misalignment angles (leading to small moiré cells), the transport properties (most remarkably, Klein tunneling) of pristine graphene devices are conserved. On the other hand, in the nearly aligned cases, the moiré interaction induces stronger effects, significantly affecting electron transport in graphene. In particular, Klein tunneling is significantly degraded. In contrast, strong Fabry-Pérot interference (accordingly, strong quantum confinement) effects and non-linear I-V characteristics are observed. P-N interface smoothness engineering is also considered, suggesting as a potential way to improve these transport features in graphene/h-BN devices.
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Submitted 15 November, 2023;
originally announced November 2023.
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Atomic scale imaging of the negative charge induced by a single vanadium dopant atom in monolayer WSe$_2$ using 4D-STEM
Authors:
D. Dosenovic,
K. Sharma,
S. Dechamps,
J. -L. Rouviere,
Y. Lu,
A. Mordant,
M. den Hertog,
L. Genovese,
S. M. -M. Dubois,
J. -C. Charlier,
M. Jamet,
A. Marty,
H. Okuno
Abstract:
There has been extensive activity exploring the do** of semiconducting two-dimensional (2D) transition metal dichalcogenides in order to tune their electronic and magnetic properties. The outcome of do** depends on various factors, including the intrinsic properties of the host material, the nature of the dopants used, their spatial distribution as well as their interactions with other types o…
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There has been extensive activity exploring the do** of semiconducting two-dimensional (2D) transition metal dichalcogenides in order to tune their electronic and magnetic properties. The outcome of do** depends on various factors, including the intrinsic properties of the host material, the nature of the dopants used, their spatial distribution as well as their interactions with other types of defects. A thorough atomic-level analysis is essential to fully understand these mechanisms. In this work, vanadium doped WSe$_2$ monolayer grown by molecular beam epitaxy is investigated using four-dimensional scanning transmission electron microscopy (4D-STEM). Through center of mass-based reconstruction, atomic scale maps are produced, allowing the visualization of both the electric field and the electrostatic potential around individual V atoms. To provide quantitative insights, these results are successfully compared with multislice image simulations based on ab initio calculations, accounting for lens aberrations. Finally, a negative charge around the V dopants is detected as a drop in the electrostatic potential, unambiguously demonstrating that 4D-STEM can be used to detect and to accurately analyze single dopant charge states in semiconducting 2D materials.
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Submitted 13 October, 2023;
originally announced October 2023.
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Enhanced Spin Hall Ratio in Two-Dimensional Semiconductors
Authors:
Jiaqi Zhou,
Samuel Poncé,
Jean-Christophe Charlier
Abstract:
The conversion efficiency from charge current to spin current via spin Hall effect is evaluated by the spin Hall ratio (SHR). Through state-of-the-art $ab~initio$ calculations involving both charge conductivity and spin Hall conductivity, we report the SHRs of the III-V monolayer family, revealing an ultrahigh ratio of 0.58 in the hole-doped GaAs monolayer. In order to find more promising 2D mater…
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The conversion efficiency from charge current to spin current via spin Hall effect is evaluated by the spin Hall ratio (SHR). Through state-of-the-art $ab~initio$ calculations involving both charge conductivity and spin Hall conductivity, we report the SHRs of the III-V monolayer family, revealing an ultrahigh ratio of 0.58 in the hole-doped GaAs monolayer. In order to find more promising 2D materials, a descriptor for high SHR is proposed and applied to a high-throughput database, which provides the fully-relativistic band structures and Wannier Hamiltonians of 216 exfoliable monolayer semiconductors and has been released to the community. Among potential candidates for high SHR, the MXene monolayer Sc$_2$CCl$_2$ is identified with the proposed descriptor and confirmed by computation, demonstrating the descriptor validity for high SHR materials discovery.
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Submitted 15 April, 2024; v1 submitted 25 August, 2023;
originally announced August 2023.
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First-principles study of the structural and electronic properties of BN-ring doped graphene
Authors:
Laura Caputo,
Viet-Hung Nguyen,
Jean-Christophe Charlier
Abstract:
Since advanced Silicon-based device components are moderately chemically tunable, doped graphene has emerged as a promising candidate to replace this semiconducting material in flexible miniaturized electronic devices. Indeed, heteroatom co-do** (i.e. with boron and/or nitrogen) is an appealing strategy to tune both its structural and electronic properties, possibly inducing a band gap in graphe…
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Since advanced Silicon-based device components are moderately chemically tunable, doped graphene has emerged as a promising candidate to replace this semiconducting material in flexible miniaturized electronic devices. Indeed, heteroatom co-do** (i.e. with boron and/or nitrogen) is an appealing strategy to tune both its structural and electronic properties, possibly inducing a band gap in graphene. However, presently synthesized BN-doped carbon-based materials are randomly doped, leading to their electronic properties not being reproducible. Using first-principles techniques, the present study investigates the periodic do** of graphene with borazine-like rings in order to search for an entirely new class of BCN hybrid 2D materials exhibiting high stabilities and optimized band gaps for opto-electronic applications. Ab initio calculations show that BN-ring doped graphene displays cohesive energies comparable with benchmark ideal periodic BCN systems (such as BC$_3$, C$_3$N$_4$, BC$_2$N) with a decreasing linear trend toward high concentrations of BN-rings. Band gaps of BN-ring doped graphene systems are calculated using many-body perturbation techniques and are found to be sensitive to the do** pattern and to be considerably larger for high concentrations of BN rings exhibiting the same orientation. These predictions suggest that BN-ring doped graphene materials could be interesting candidates for the next generation of optoelectronic devices and open new opportunities for their synthesis using chemical bottom-up approaches.
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Submitted 26 October, 2022;
originally announced October 2022.
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Non-identical moiré twins in bilayer graphene
Authors:
E. Arrighi,
V. -H. Nguyen,
M. Di Luca,
G. Maffione,
Y. Hong,
L. Farrar,
K. Watanabe,
T. Taniguchi,
D. Mailly,
J. -C. Charlier,
R. Ribeiro-Palau
Abstract:
The superlattice obtained by aligning a monolayer graphene and boron nitride (BN) inherits from the hexagonal lattice a sixty degrees periodicity with the layer alignment. It implies that, in principle, the properties of the heterostructure must be identical for 0$^{\circ}$ and 60$^{\circ}$ of layer alignment. Here, we demonstrate, using dynamically rotatable van der Waals heterostructures, that t…
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The superlattice obtained by aligning a monolayer graphene and boron nitride (BN) inherits from the hexagonal lattice a sixty degrees periodicity with the layer alignment. It implies that, in principle, the properties of the heterostructure must be identical for 0$^{\circ}$ and 60$^{\circ}$ of layer alignment. Here, we demonstrate, using dynamically rotatable van der Waals heterostructures, that the moiré superlattice formed in a bilayer graphene/BN has different electronic properties at 0$^{\circ}$ and 60$^{\circ}$ of alignment. Although the existence of these non-identical moiré twins is explained by different relaxation of the atomic structures for each alignment, the origin of the observed valley Hall effect remains to be explained. A simple Berry curvature argument do not hold to explain the hundred and twenty degrees periodicity of this observation. Our results highlight the complexity of the interplay between mechanical and electronic properties on moiré structure and the importance of taking into account atomic structure relaxation to understand its electronic properties.
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Submitted 12 July, 2023; v1 submitted 3 May, 2022;
originally announced May 2022.
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Electronic properties of twisted multilayer graphene
Authors:
V. Hung Nguyen,
Trinh X. Hoang,
J. -C. Charlier
Abstract:
Twisted bilayer graphene displays many fascinating properties that can be tuned by varying the relative angle (also called twist angle) between its monolayers. As a remarkable feature, both the electronic flat bands and the corresponding strong electron localization have been obtained at a specific "magic" angle ($\sim 1.1^{\circ}$), leading to the observation of several strongly correlated electr…
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Twisted bilayer graphene displays many fascinating properties that can be tuned by varying the relative angle (also called twist angle) between its monolayers. As a remarkable feature, both the electronic flat bands and the corresponding strong electron localization have been obtained at a specific "magic" angle ($\sim 1.1^{\circ}$), leading to the observation of several strongly correlated electronic phenomena. Such a discovery has hence inspired the creation of a novel research field called twistronics, i.e., aiming to explore novel physical properties in vertically stacked 2D structures when tuning the twist angle between the related layers. In this paper, a comprehensive and systematic study related to the electronic properties of twisted multilayer graphene (TMG) is presented based on atomistic calculations. The dependence of both the global and the local electronic quantities on the twist angle and on the stacking configuration are analyzed, fully taking into account atomic reconstruction effects. Consequently, the correlation between structural and electronic properties are clarified, thereby highlighting the shared characteristics and differences between various TMG systems as well as providing a comprehensive and essential overview. On the basis of these investigations, possibilities to tune the electronic properties are discussed, allowing for further developments in the field of twistronics.
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Submitted 17 March, 2022;
originally announced March 2022.
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Towards Optimized Charge Transport in Multilayer Reduced Graphene Oxides
Authors:
Mustafa Neset Cinar,
Aleandro Antidormi,
Viet-Hung Nguyen,
Alessandro Kovtun,
Samuel Lara Avila,
Andrea Liscio,
Jean-Christophe Charlier,
Stephan Roche,
Haldun Sevincli
Abstract:
In the context of graphene-based composite applications, a complete understanding of charge conduction in multilayer reduced graphene oxides (rGO) is highly desirable. However, these rGO compounds are characterized by multiple and different sources of disorder depending on the chemical method used for their synthesis. Most importantly the precise role of interlayer interaction in promoting or jeop…
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In the context of graphene-based composite applications, a complete understanding of charge conduction in multilayer reduced graphene oxides (rGO) is highly desirable. However, these rGO compounds are characterized by multiple and different sources of disorder depending on the chemical method used for their synthesis. Most importantly the precise role of interlayer interaction in promoting or jeopardizing electronic flow remains unclear. Here, thanks to the development of a multiscale computational approach combining first-principles calculations with large scale transport simulations, the transport scaling laws in multilayer rGO are unraveled, explaining why diffusion worsens with increasing film thickness. In contrast, contacted films are found to exhibit an opposite trend when the mean free path becomes shorter than the channel length, since conduction becomes predominantly driven by interlayer hop**. These predictions are favourably compared with experimental data and open a road towards the optimization of graphene-based composites with improved electrical conduction.
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Submitted 31 January, 2022;
originally announced January 2022.
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Graphene whisperitronics: transducing whispering gallery modes into electronic transport
Authors:
Boris Brun,
Viet-Hung Nguyen,
Nicolas Moreau,
Sowmya Somanchi,
Kenji Watanabe,
Takashi Taniguchi,
Jean-Christophe Charlier,
Christoph Stampfer,
Benoit Hackens
Abstract:
When confined in circular cavities, graphene relativistic charge carriers occupy whispering gallery modes (WGM) in analogy to classical acoustic and optical fields. The rich geometrical patterns of the WGM decorating the local density of states offer promising perspectives to devise new disruptive quantum devices. However, exploiting these highly sensitive resonances requires the transduction of t…
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When confined in circular cavities, graphene relativistic charge carriers occupy whispering gallery modes (WGM) in analogy to classical acoustic and optical fields. The rich geometrical patterns of the WGM decorating the local density of states offer promising perspectives to devise new disruptive quantum devices. However, exploiting these highly sensitive resonances requires the transduction of the WGMs to the outside world through source and drain electrodes, a yet unreported configuration. Here we create a circular p-n island in a graphene device using a polarized scanning gate microscope tip, and probe the resulting WGMs signatures in in-plane electronic transport through the p-n island. Combining tight-binding simulations and exact solution of the Dirac equation, we assign the measured device conductance features to WGMs, and demonstrate mode selectivity by displacing the p-n island with respect to a constriction. This work therefore constitutes a proof of concept for graphene whisperitronics devices.
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Submitted 14 December, 2021;
originally announced December 2021.
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Electron-phonon coupling in a magic-angle twisted-bilayer graphene device
Authors:
Andreij C. Gadelha,
Viet-Hung Nguyen,
Eliel G. Neto,
Fabiano Santana,
Markus B. Raschke,
Michael Lamparski,
Vincent Meunier,
Jean-Christophe Charlier,
Ado Jorio
Abstract:
The importance of phonons in the strong correlation phenomena observed in twisted bilayer graphene (TBG) at the so-called magic-angle is under debate. Here we apply gate-dependent micro-Raman spectroscopy to monitor the G band linewidth in TBG devices of twist angles $θ=0^{\circ}$, $\sim 1.1^{\circ}$ (magic-angle) and $\sim 7^{\circ}$ (large angle). The results show a broad and p/n-asymmetric dopi…
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The importance of phonons in the strong correlation phenomena observed in twisted bilayer graphene (TBG) at the so-called magic-angle is under debate. Here we apply gate-dependent micro-Raman spectroscopy to monitor the G band linewidth in TBG devices of twist angles $θ=0^{\circ}$, $\sim 1.1^{\circ}$ (magic-angle) and $\sim 7^{\circ}$ (large angle). The results show a broad and p/n-asymmetric do** behavior at the magic-angle, in clear contrast to the behavior observed in twist angles above and below. Atomistic modeling reproduces the experimental observations, revealing how the unique electronic structure of magic-angle TBGs influences the electron-phonon coupling and, consequently, the G band linewidth. Our findings indicate a connection between electron-phonon coupling and experimental observations of strongly correlated phenomena in magic-angle TBG.
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Submitted 28 October, 2021;
originally announced October 2021.
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Controllable Spin Current in van der Waals Ferromagnet Fe3GeTe2
Authors:
Jiaqi Zhou,
Jean-Christophe Charlier
Abstract:
The control of spin current is pivotal for spintronic applications, especially for spin-orbit torque devices. Spin Hall effect (SHE) is a prevalent method to generate spin current. However, it is difficult to manipulate its spin polarization in nonmagnet. Recently, the discovery of spin current in ferromagnet offers opportunity to realize the manipulation. In the present work, the spin current in…
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The control of spin current is pivotal for spintronic applications, especially for spin-orbit torque devices. Spin Hall effect (SHE) is a prevalent method to generate spin current. However, it is difficult to manipulate its spin polarization in nonmagnet. Recently, the discovery of spin current in ferromagnet offers opportunity to realize the manipulation. In the present work, the spin current in van der Waals ferromagnet Fe3GeTe2 (FGT) with varying magnetization is theoretically investigated. It has been observed that the spin current in FGT presents the nonlinear behavior with respect to magnetization. The in-plane and out-of-plane spin polarization emerges simultaneously, and the bilayer FGT can even exhibit arbitrary spin polarization thanks to the reduced symmetry. More intriguingly, the correlation between anomalous Hall effect (AHE) and spin anomalous Hall effect (SAHE) has been interpreted from the aspect of Berry curvature. This work illustrates that the interplay of symmetry and magnetism can effectively control the magnitude and spin polarization of the spin current, providing a practical method to realize exotic spin-orbit torques.
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Submitted 27 September, 2021; v1 submitted 12 April, 2021;
originally announced April 2021.
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Electronic localization in small-angle twisted bilayer graphene
Authors:
V. Hung Nguyen,
D. Paszko,
M. Lamparski,
B. Van Troeye,
V. Meunier,
J. -C. Charlier
Abstract:
Close to a magical angle, twisted bilayer graphene (TBLG) systems exhibit isolated flat electronic bands and, accordingly, strong electron localization. TBLGs have hence been ideal platforms to explore superconductivity, correlated insulating states, magnetism, and quantized anomalous Hall states in reduced dimension. Below a threshold twist angle ($\sim$ $1.1^\circ$), the TBLG superlattice underg…
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Close to a magical angle, twisted bilayer graphene (TBLG) systems exhibit isolated flat electronic bands and, accordingly, strong electron localization. TBLGs have hence been ideal platforms to explore superconductivity, correlated insulating states, magnetism, and quantized anomalous Hall states in reduced dimension. Below a threshold twist angle ($\sim$ $1.1^\circ$), the TBLG superlattice undergoes lattice reconstruction, leading to a periodic moiré structure which presents a marked atomic corrugation. Using a tight-binding framework, this research demonstrates that superlattice reconstruction affects significantly the electronic structure of small-angle TBLGs. The first magic angle at $\sim$ $1.1^\circ$ is found to be a critical case presenting globally maximized electron localization, thus separating reconstructed TBLGs into two classes with clearly distinct electronic properties. While low-energy Dirac fermions are still preserved at large twist angles $> 1.1 ^\circ$, small-angle ($\lesssim 1.1^\circ$) TBLG systems present common features such as large spatial variation and strong electron localization observed in unfavorable AA stacking regions. However, for small twist angles below $1.1 ^\circ$, the relative contribution of the local AA regions is progressively reduced, thus precluding the emergence of further magic angles, in very good agreement with existing experimental evidence.
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Submitted 8 May, 2021; v1 submitted 10 February, 2021;
originally announced February 2021.
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Lattice dynamics localization in low-angle twisted bilayer graphene
Authors:
Andreij C. Gadelha,
Douglas A. A. Ohlberg,
Cassiano Rabelo,
Eliel G. S. Neto,
Thiago L. Vasconcelos,
João L. Campos,
Jessica S. Lemos,
Vinícius Ornelas,
Daniel Miranda,
Rafael Nadas,
Fabiano C. Santana,
Kenji Watanabe,
Takashi Taniguchi,
Benoit van Troeye,
Michael Lamparski,
Vincent Meunier,
Viet-Hung Nguyen,
Dawid Paszko,
Jean-Christophe Charlier,
Leonardo C. Campos,
Luiz G. Cançado,
Gilberto Medeiros-Ribeiro,
Ado Jorio
Abstract:
A low twist angle between the two stacked crystal networks in bilayer graphene enables self-organized lattice reconstruction with the formation of a periodic domain. This superlattice modulates the vibrational and electronic structures, imposing new rules for electron-phonon coupling and the eventual observation of strong correlation and superconductivity. Direct optical images of the crystal supe…
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A low twist angle between the two stacked crystal networks in bilayer graphene enables self-organized lattice reconstruction with the formation of a periodic domain. This superlattice modulates the vibrational and electronic structures, imposing new rules for electron-phonon coupling and the eventual observation of strong correlation and superconductivity. Direct optical images of the crystal superlattice in reconstructed twisted bilayer graphene are reported here, generated by the inelastic scattering of light in a nano-Raman spectroscope. The observation of the crystallographic structure with visible light is made possible due to lattice dynamics localization, the images resembling spectral variations caused by the presence of strain solitons and topological points. The results are rationalized by a nearly-free-phonon model and electronic calculations that highlight the relevance of solitons and topological points, particularly pronounced for structures with small twist angles. We anticipate our discovery to play a role in understanding Jahn-Teller effects and electronic Cooper pairing, among many other important phonon-related effects, and it may be useful for characterizing devices in the most prominent platform for the field of twistronics.
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Submitted 16 June, 2020;
originally announced June 2020.
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XtracTree: a Simple and Effective Method for Regulator Validation of Bagging Methods Used in Retail Banking
Authors:
Jeremy Charlier,
Vladimir Makarenkov
Abstract:
Bootstrap aggregation, known as bagging, is one of the most popular ensemble methods used in machine learning (ML). An ensemble method is a ML method that combines multiple hypotheses to form a single hypothesis used for prediction. A bagging algorithm combines multiple classifiers modeled on different sub-samples of the same data set to build one large classifier. Banks, and their retail banking…
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Bootstrap aggregation, known as bagging, is one of the most popular ensemble methods used in machine learning (ML). An ensemble method is a ML method that combines multiple hypotheses to form a single hypothesis used for prediction. A bagging algorithm combines multiple classifiers modeled on different sub-samples of the same data set to build one large classifier. Banks, and their retail banking activities, are nowadays using the power of ML algorithms, including decision trees and random forests, to optimize their processes. However, banks have to comply with regulators and governance and, hence, delivering effective ML solutions is a challenging task. It starts with the bank's validation and governance department, followed by the deployment of the solution in a production environment up to the external validation of the national financial regulator. Each proposed ML model has to be validated and clear rules for every algorithm-based decision must be justified. In this context, we propose XtracTree, an algorithm capable of efficiently converting an ML bagging classifier, such as a random forest, into simple "if-then" rules satisfying the requirements of model validation. We use a public loan data set from Kaggle to illustrate the usefulness of our approach. Our experiments demonstrate that using XtracTree, one can convert an ML model into a rule-based algorithm, leading to easier model validation by national financial regulators and the bank's validation department. The proposed approach allowed our banking institution to reduce up to 50% the time of delivery of our AI solutions to the end-user.
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Submitted 17 August, 2021; v1 submitted 5 April, 2020;
originally announced April 2020.
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Optimizing Dirac fermions quasi-confinement by potential smoothness engineering
Authors:
Boris Brun,
Nicolas Moreau,
Sowmya Somanchi,
Viet-Hung Nguyen,
Alina Mreńca-Kolasińska,
Kenji Watanabe,
Takashi Taniguchi,
Jean-Christophe Charlier,
Christoph Stampfer,
Benoit Hackens
Abstract:
With the advent of high mobility encapsulated graphene devices, new electronic components ruled by Dirac fermions optics have been envisioned and realized. The main building blocks of electron-optics devices are gate-defined p-n junctions, which guide, transmit and refract graphene charge carriers, just like prisms and lenses in optics. The reflection and transmission are governed by the p-n junct…
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With the advent of high mobility encapsulated graphene devices, new electronic components ruled by Dirac fermions optics have been envisioned and realized. The main building blocks of electron-optics devices are gate-defined p-n junctions, which guide, transmit and refract graphene charge carriers, just like prisms and lenses in optics. The reflection and transmission are governed by the p-n junction smoothness, a parameter difficult to tune in conventional devices. Here we create p-n junctions in graphene, using the polarized tip of a scanning gate microscope, yielding Fabry-Pérot interference fringes in the device resistance. We control the p-n junctions smoothness using the tip-to-graphene distance, and show increased interference contrast using smoother potential barriers. Extensive tight-binding simulation reveal that smooth potential barriers induce a pronounced quasi-confinement of Dirac fermions below the tip, yielding enhanced interference contrast. On the opposite, sharp barriers are excellent Dirac fermions transmitters and lead to poorly contrasted interferences. Our work emphasizes the importance of junction smoothness for relativistic electron optics devices engineering.
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Submitted 27 November, 2019;
originally announced November 2019.
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From Persistent Homology to Reinforcement Learning with Applications for Retail Banking
Authors:
Jeremy Charlier
Abstract:
The retail banking services are one of the pillars of the modern economic growth. However, the evolution of the client's habits in modern societies and the recent European regulations promoting more competition mean the retail banks will encounter serious challenges for the next few years, endangering their activities. They now face an impossible compromise: maximizing the satisfaction of their hy…
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The retail banking services are one of the pillars of the modern economic growth. However, the evolution of the client's habits in modern societies and the recent European regulations promoting more competition mean the retail banks will encounter serious challenges for the next few years, endangering their activities. They now face an impossible compromise: maximizing the satisfaction of their hyper-connected clients while avoiding any risk of default and being regulatory compliant. Therefore, advanced and novel research concepts are a serious game-changer to gain a competitive advantage. In this context, we investigate in this thesis different concepts bridging the gap between persistent homology, neural networks, recommender engines and reinforcement learning with the aim of improving the quality of the retail banking services. Our contribution is threefold. First, we highlight how to overcome insufficient financial data by generating artificial data using generative models and persistent homology. Then, we present how to perform accurate financial recommendations in multi-dimensions. Finally, we underline a reinforcement learning model-free approach to determine the optimal policy of money management based on the aggregated financial transactions of the clients. Our experimental data sets, extracted from well-known institutions where the privacy and the confidentiality of the clients were not put at risk, support our contributions. In this work, we provide the motivations of our retail banking research project, describe the theory employed to improve the financial services quality and evaluate quantitatively and qualitatively our methodologies for each of the proposed research scenarios.
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Submitted 23 November, 2019;
originally announced November 2019.
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First-principles prediction of lattice coherency in van der Waals heterostructures
Authors:
Benoit Van Troeye,
Aurélien Lherbier,
Simon M. -M. Dubois,
Jean-Christophe Charlier,
Xavier Gonze
Abstract:
The emergence of superconductivity in slightly-misaligned graphene bilayer [1] and moiré excitons in MoSe$_2$-WSe$_2$ van der Waals (vdW) heterostructures [2] is intimately related to the formation of a 2D superlattice in those systems. At variance, perfect primitive lattice matching of the constituent layers has also been reported in some vdW-heterostructures [3-5], highlighting the richness of i…
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The emergence of superconductivity in slightly-misaligned graphene bilayer [1] and moiré excitons in MoSe$_2$-WSe$_2$ van der Waals (vdW) heterostructures [2] is intimately related to the formation of a 2D superlattice in those systems. At variance, perfect primitive lattice matching of the constituent layers has also been reported in some vdW-heterostructures [3-5], highlighting the richness of interfaces in the 2D world. In this work, the determination of the nature of such interface, from first principles, is demonstrated. To do so, an extension of the Frenkel-Kontorova (FK) model [6] is presented, linked to first-principles calculations, and used to predict lattice coherency for a set of 56 vdW-heterostructures. Computational predictions agree with experiments, when available. New superlattices as well as perfectly-matching interfaces are predicted.
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Submitted 15 November, 2019;
originally announced November 2019.
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SynGAN: Towards Generating Synthetic Network Attacks using GANs
Authors:
Jeremy Charlier,
Aman Singh,
Gaston Ormazabal,
Radu State,
Henning Schulzrinne
Abstract:
The rapid digital transformation without security considerations has resulted in the rise of global-scale cyberattacks. The first line of defense against these attacks are Network Intrusion Detection Systems (NIDS). Once deployed, however, these systems work as blackboxes with a high rate of false positives with no measurable effectiveness. There is a need to continuously test and improve these sy…
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The rapid digital transformation without security considerations has resulted in the rise of global-scale cyberattacks. The first line of defense against these attacks are Network Intrusion Detection Systems (NIDS). Once deployed, however, these systems work as blackboxes with a high rate of false positives with no measurable effectiveness. There is a need to continuously test and improve these systems by emulating real-world network attack mutations. We present SynGAN, a framework that generates adversarial network attacks using the Generative Adversial Networks (GAN). SynGAN generates malicious packet flow mutations using real attack traffic, which can improve NIDS attack detection rates. As a first step, we compare two public datasets, NSL-KDD and CICIDS2017, for generating synthetic Distributed Denial of Service (DDoS) network attacks. We evaluate the attack quality (real vs. synthetic) using a gradient boosting classifier.
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Submitted 26 August, 2019;
originally announced August 2019.
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Aharonov-Bohm interferences in polycrystalline graphene
Authors:
Viet Hung Nguyen,
Jean-Christophe Charlier
Abstract:
Aharonov-Bohm (AB) interferences in the quantum Hall regime can be achieved, provided that electrons are able to transmit between two edge channels in nanostructures. Pioneering approaches include quantum point contacts in 2DEG systems, bipolar graphene p-n junctions, and magnetic field heterostructures. In this work, defect scattering is proposed as an alternative mechanism to achieve AB interfer…
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Aharonov-Bohm (AB) interferences in the quantum Hall regime can be achieved, provided that electrons are able to transmit between two edge channels in nanostructures. Pioneering approaches include quantum point contacts in 2DEG systems, bipolar graphene p-n junctions, and magnetic field heterostructures. In this work, defect scattering is proposed as an alternative mechanism to achieve AB interferences in polycrystalline graphene. Indeed, due to such scattering, the extended defects across the sample can act as tunneling paths connecting quantum Hall edge channels. Consequently, strong AB oscillations in the conductance are predicted in polycrystalline graphene systems with two parallel grain boundaries. In addition, this general approach is demonstrated to be applicable to nano-systems containing two graphene barriers with functional impurities and perspectively, can also be extended to similar systems of 2D materials beyond graphene.
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Submitted 25 August, 2019;
originally announced August 2019.
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Universal spin diffusion length in polycrystalline graphene
Authors:
Aron W. Cummings,
Simon M. -M. Dubois,
Jean-Christophe Charlier,
Stephan Roche
Abstract:
Graphene grown by chemical vapor deposition (CVD) is the most promising material for industrial-scale applications based on graphene monolayers. It also holds promise for spintronics; despite being polycrystalline, spin transport in CVD graphene has been measured over lengths up to 30 $μ$m, which is on par with the best measurements made in single-crystal graphene. These results suggest that grain…
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Graphene grown by chemical vapor deposition (CVD) is the most promising material for industrial-scale applications based on graphene monolayers. It also holds promise for spintronics; despite being polycrystalline, spin transport in CVD graphene has been measured over lengths up to 30 $μ$m, which is on par with the best measurements made in single-crystal graphene. These results suggest that grain boundaries (GBs) in CVD graphene, while impeding charge transport, may have little effect on spin transport. However, to date very little is known about the true impact of disordered networks of GBs on spin relaxation. Here, by using first-principles simulations, we derive an effective tight-binding model of graphene GBs in the presence of spin-orbit coupling (SOC), which we then use to evaluate spin transport in realistic morphologies of polycrystalline graphene. The spin diffusion length is found to be independent of the grain size, and is determined only by the strength of the substrate-induced SOC. This result is consistent with the D'yakonov-Perel' mechanism of spin relaxation in the diffusive regime, but we find that it also holds in the presence of quantum interference. These results clarify the role played by GBs and demonstrate that the average grain size does not dictate the upper limit for spin transport in CVD-grown graphene, a result of fundamental importance for optimizing large-scale graphene-based spintronic devices.
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Submitted 9 October, 2019; v1 submitted 30 July, 2019;
originally announced July 2019.
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Visualization of AE's Training on Credit Card Transactions with Persistent Homology
Authors:
Jeremy Charlier,
Francois Petit,
Gaston Ormazabal,
Radu State,
Jean Hilger
Abstract:
Auto-encoders are among the most popular neural network architecture for dimension reduction. They are composed of two parts: the encoder which maps the model distribution to a latent manifold and the decoder which maps the latent manifold to a reconstructed distribution. However, auto-encoders are known to provoke chaotically scattered data distribution in the latent manifold resulting in an inco…
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Auto-encoders are among the most popular neural network architecture for dimension reduction. They are composed of two parts: the encoder which maps the model distribution to a latent manifold and the decoder which maps the latent manifold to a reconstructed distribution. However, auto-encoders are known to provoke chaotically scattered data distribution in the latent manifold resulting in an incomplete reconstructed distribution. Current distance measures fail to detect this problem because they are not able to acknowledge the shape of the data manifolds, i.e. their topological features, and the scale at which the manifolds should be analyzed. We propose Persistent Homology for Wasserstein Auto-Encoders, called PHom-WAE, a new methodology to assess and measure the data distribution of a generative model. PHom-WAE minimizes the Wasserstein distance between the true distribution and the reconstructed distribution and uses persistent homology, the study of the topological features of a space at different spatial resolutions, to compare the nature of the latent manifold and the reconstructed distribution. Our experiments underline the potential of persistent homology for Wasserstein Auto-Encoders in comparison to Variational Auto-Encoders, another type of generative model. The experiments are conducted on a real-world data set particularly challenging for traditional distance measures and auto-encoders. PHom-WAE is the first methodology to propose a topological distance measure, the bottleneck distance, for Wasserstein Auto-Encoders used to compare decoded samples of high quality in the context of credit card transactions.
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Submitted 12 August, 2019; v1 submitted 24 May, 2019;
originally announced May 2019.
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Predicting Sparse Clients' Actions with CPOPT-Net in the Banking Environment
Authors:
Jeremy Charlier,
Radu State,
Jean Hilger
Abstract:
The digital revolution of the banking system with evolving European regulations have pushed the major banking actors to innovate by a newly use of their clients' digital information. Given highly sparse client activities, we propose CPOPT-Net, an algorithm that combines the CP canonical tensor decomposition, a multidimensional matrix decomposition that factorizes a tensor as the sum of rank-one te…
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The digital revolution of the banking system with evolving European regulations have pushed the major banking actors to innovate by a newly use of their clients' digital information. Given highly sparse client activities, we propose CPOPT-Net, an algorithm that combines the CP canonical tensor decomposition, a multidimensional matrix decomposition that factorizes a tensor as the sum of rank-one tensors, and neural networks. CPOPT-Net removes efficiently sparse information with a gradient-based resolution while relying on neural networks for time series predictions. Our experiments show that CPOPT-Net is capable to perform accurate predictions of the clients' actions in the context of personalized recommendation. CPOPT-Net is the first algorithm to use non-linear conjugate gradient tensor resolution with neural networks to propose predictions of financial activities on a public data set.
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Submitted 23 May, 2019;
originally announced May 2019.
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MQLV: Optimal Policy of Money Management in Retail Banking with Q-Learning
Authors:
Jeremy Charlier,
Gaston Ormazabal,
Radu State,
Jean Hilger
Abstract:
Reinforcement learning has become one of the best approach to train a computer game emulator capable of human level performance. In a reinforcement learning approach, an optimal value function is learned across a set of actions, or decisions, that leads to a set of states giving different rewards, with the objective to maximize the overall reward. A policy assigns to each state-action pairs an exp…
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Reinforcement learning has become one of the best approach to train a computer game emulator capable of human level performance. In a reinforcement learning approach, an optimal value function is learned across a set of actions, or decisions, that leads to a set of states giving different rewards, with the objective to maximize the overall reward. A policy assigns to each state-action pairs an expected return. We call an optimal policy a policy for which the value function is optimal. QLBS, Q-Learner in the Black-Scholes(-Merton) Worlds, applies the reinforcement learning concepts, and noticeably, the popular Q-learning algorithm, to the financial stochastic model of Black, Scholes and Merton. It is, however, specifically optimized for the geometric Brownian motion and the vanilla options. Its range of application is, therefore, limited to vanilla option pricing within financial markets. We propose MQLV, Modified Q-Learner for the Vasicek model, a new reinforcement learning approach that determines the optimal policy of money management based on the aggregated financial transactions of the clients. It unlocks new frontiers to establish personalized credit card limits or to fulfill bank loan applications, targeting the retail banking industry. MQLV extends the simulation to mean reverting stochastic diffusion processes and it uses a digital function, a Heaviside step function expressed in its discrete form, to estimate the probability of a future event such as a payment default. In our experiments, we first show the similarities between a set of historical financial transactions and Vasicek generated transactions and, then, we underline the potential of MQLV on generated Monte Carlo simulations. Finally, MQLV is the first Q-learning Vasicek-based methodology addressing transparent decision making processes in retail banking.
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Submitted 21 August, 2019; v1 submitted 24 May, 2019;
originally announced May 2019.
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VecHGrad for Solving Accurately Complex Tensor Decomposition
Authors:
Jeremy Charlier,
Vladimir Makarenkov
Abstract:
Tensor decomposition, a collection of factorization techniques for multidimensional arrays, are among the most general and powerful tools for scientific analysis. However, because of their increasing size, today's data sets require more complex tensor decomposition involving factorization with multiple matrices and diagonal tensors such as DEDICOM or PARATUCK2. Traditional tensor resolution algori…
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Tensor decomposition, a collection of factorization techniques for multidimensional arrays, are among the most general and powerful tools for scientific analysis. However, because of their increasing size, today's data sets require more complex tensor decomposition involving factorization with multiple matrices and diagonal tensors such as DEDICOM or PARATUCK2. Traditional tensor resolution algorithms such as Stochastic Gradient Descent (SGD), Non-linear Conjugate Gradient descent (NCG) or Alternating Least Square (ALS), cannot be easily applied to complex tensor decomposition or often lead to poor accuracy at convergence. We propose a new resolution algorithm, called VecHGrad, for accurate and efficient stochastic resolution over all existing tensor decomposition, specifically designed for complex decomposition. VecHGrad relies on gradient, Hessian-vector product and adaptive line search to ensure the convergence during optimization. Our experiments on five real-world data sets with the state-of-the-art deep learning gradient optimization models show that VecHGrad is capable of converging considerably faster because of its superior theoretical convergence rate per step. Therefore, VecHGrad targets as well deep learning optimizer algorithms. The experiments are performed for various tensor decomposition including CP, DEDICOM and PARATUCK2. Although it involves a slightly more complex update rule, VecHGrad's runtime is similar in practice to that of gradient methods such as SGD, Adam or RMSProp.
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Submitted 9 March, 2020; v1 submitted 24 May, 2019;
originally announced May 2019.
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User-Device Authentication in Mobile Banking using APHEN for Paratuck2 Tensor Decomposition
Authors:
Jeremy Charlier,
Eric Falk,
Radu State,
Jean Hilger
Abstract:
The new financial European regulations such as PSD2 are changing the retail banking services. Noticeably, the monitoring of the personal expenses is now opened to other institutions than retail banks. Nonetheless, the retail banks are looking to leverage the user-device authentication on the mobile banking applications to enhance the personal financial advertisement. To address the profiling of th…
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The new financial European regulations such as PSD2 are changing the retail banking services. Noticeably, the monitoring of the personal expenses is now opened to other institutions than retail banks. Nonetheless, the retail banks are looking to leverage the user-device authentication on the mobile banking applications to enhance the personal financial advertisement. To address the profiling of the authentication, we rely on tensor decomposition, a higher dimensional analogue of matrix decomposition. We use Paratuck2, which expresses a tensor as a multiplication of matrices and diagonal tensors, because of the imbalance between the number of users and devices. We highlight why Paratuck2 is more appropriate in this case than the popular CP tensor decomposition, which decomposes a tensor as a sum of rank-one tensors. However, the computation of Paratuck2 is computational intensive. We propose a new APproximate HEssian-based Newton resolution algorithm, APHEN, capable of solving Paratuck2 more accurately and faster than the other popular approaches based on alternating least square or gradient descent. The results of Paratuck2 are used for the predictions of users' authentication with neural networks. We apply our method for the concrete case of targeting clients for financial advertising campaigns based on the authentication events generated by mobile banking applications.
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Submitted 23 May, 2019;
originally announced May 2019.
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PHom-GeM: Persistent Homology for Generative Models
Authors:
Jeremy Charlier,
Radu State,
Jean Hilger
Abstract:
Generative neural network models, including Generative Adversarial Network (GAN) and Auto-Encoders (AE), are among the most popular neural network models to generate adversarial data. The GAN model is composed of a generator that produces synthetic data and of a discriminator that discriminates between the generator's output and the true data. AE consist of an encoder which maps the model distribu…
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Generative neural network models, including Generative Adversarial Network (GAN) and Auto-Encoders (AE), are among the most popular neural network models to generate adversarial data. The GAN model is composed of a generator that produces synthetic data and of a discriminator that discriminates between the generator's output and the true data. AE consist of an encoder which maps the model distribution to a latent manifold and of a decoder which maps the latent manifold to a reconstructed distribution. However, generative models are known to provoke chaotically scattered reconstructed distribution during their training, and consequently, incomplete generated adversarial distributions. Current distance measures fail to address this problem because they are not able to acknowledge the shape of the data manifold, i.e. its topological features, and the scale at which the manifold should be analyzed. We propose Persistent Homology for Generative Models, PHom-GeM, a new methodology to assess and measure the distribution of a generative model. PHom-GeM minimizes an objective function between the true and the reconstructed distributions and uses persistent homology, the study of the topological features of a space at different spatial resolutions, to compare the nature of the true and the generated distributions. Our experiments underline the potential of persistent homology for Wasserstein GAN in comparison to Wasserstein AE and Variational AE. The experiments are conducted on a real-world data set particularly challenging for traditional distance measures and generative neural network models. PHom-GeM is the first methodology to propose a topological distance measure, the bottleneck distance, for generative models used to compare adversarial samples in the context of credit card transactions.
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Submitted 23 May, 2019;
originally announced May 2019.
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Non-Negative PARATUCK2 Tensor Decomposition Combined to LSTM Network For Smart Contracts Profiling
Authors:
Jeremy Charlier,
Radu State,
Jean Hilger
Abstract:
Smart contracts are programs stored and executed on a blockchain. The Ethereum platform, an open-source blockchain-based platform, has been designed to use these programs offering secured protocols and transaction costs reduction. The Ethereum Virtual Machine performs smart contracts runs, where the execution of each contract is limited to the amount of gas required to execute the operations descr…
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Smart contracts are programs stored and executed on a blockchain. The Ethereum platform, an open-source blockchain-based platform, has been designed to use these programs offering secured protocols and transaction costs reduction. The Ethereum Virtual Machine performs smart contracts runs, where the execution of each contract is limited to the amount of gas required to execute the operations described in the code. Each gas unit must be paid using Ether, the crypto-currency of the platform. Due to smart contracts interactions evolving over time, analyzing the behavior of smart contracts is very challenging. We address this challenge in our paper. We develop for this purpose an innovative approach based on the non-negative tensor decomposition PARATUCK2 combined with long short-term memory (LSTM) to assess if predictive analysis can forecast smart contracts interactions over time. To validate our methodology, we report results for two use cases. The main use case is related to analyzing smart contracts and allows shedding some light into the complex interactions among smart contracts. In order to show the generality of our method on other use cases, we also report its performance on video on demand recommendation.
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Submitted 23 May, 2019;
originally announced May 2019.
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Modeling Smart Contracts Activities: A Tensor Based Approach
Authors:
Jeremy Charlier,
Radu Statem,
Jean Hilger
Abstract:
Smart contracts are autonomous software executing predefined conditions. Two of the biggest advantages of the smart contracts are secured protocols and transaction costs reduction. On the Ethereum platform, an open-source blockchain-based platform, smart contracts implement a distributed virtual machine on the distributed ledger. To avoid denial of service attacks and monetize the services, paymen…
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Smart contracts are autonomous software executing predefined conditions. Two of the biggest advantages of the smart contracts are secured protocols and transaction costs reduction. On the Ethereum platform, an open-source blockchain-based platform, smart contracts implement a distributed virtual machine on the distributed ledger. To avoid denial of service attacks and monetize the services, payment transactions are executed whenever code is being executed between contracts. It is thus natural to investigate if predictive analysis is capable to forecast these interactions. We have addressed this issue and propose an innovative application of the tensor decomposition CANDECOMP/PARAFAC to the temporal link prediction of smart contracts. We introduce a new approach leveraging stochastic processes for series predictions based on the tensor decomposition that can be used for smart contracts predictive analytics.
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Submitted 23 May, 2019;
originally announced May 2019.
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Strain Modulated Superlattices in Graphene
Authors:
R. Banerjee,
V. -H. Nguyen,
T. Granzier-Nakajima,
L. Pabbi,
A. Lherbier,
A. R. Binion,
J. -C. Charlier,
M. Terrones,
E. W. Hudson
Abstract:
Strain engineering of graphene takes advantage of one of the most dramatic responses of Dirac electrons enabling their manipulation via strain-induced pseudo-magnetic fields. Numerous theoretically proposed devices, such as resonant cavities and valley filters, as well as novel phenomena, such as snake states, could potentially be enabled via this effect. These proposals, however, require strong,…
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Strain engineering of graphene takes advantage of one of the most dramatic responses of Dirac electrons enabling their manipulation via strain-induced pseudo-magnetic fields. Numerous theoretically proposed devices, such as resonant cavities and valley filters, as well as novel phenomena, such as snake states, could potentially be enabled via this effect. These proposals, however, require strong, spatially oscillating magnetic fields while to date only the generation and effects of pseudo-gauge fields which vary at a length scale much larger than the magnetic length have been reported. Here we create a periodic pseudo-gauge field profile using periodic strain that varies at the length scale comparable to the magnetic length and study its effects on Dirac electrons. A periodic strain profile is achieved by pulling on graphene with extreme (>10%) strain and forming nanoscale ripples, akin to a plastic wrap pulled taut at its edges. Combining scanning tunneling microscopy and atomistic calculations, we find that spatially oscillating strain results in a new quantization different from the familiar Landau quantization observed in previous studies. We also find that graphene ripples are characterized by large variations in carbon-carbon bond length, directly impacting the electronic coupling between atoms, which within a single ripple can be as different as in two different materials. The result is a single graphene sheet that effectively acts as an electronic superlattice. Our results thus also establish a novel approach to synthesize an effective 2D lateral heterostructure - by periodic modulation of lattice strain.
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Submitted 23 January, 2020; v1 submitted 25 March, 2019;
originally announced March 2019.
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Stepped Graphene-based Aharonov-Bohm Interferometers
Authors:
Viet Hung Nguyen,
Jean-Christophe Charlier
Abstract:
Aharonov-Bohm interferences in the quantum Hall regime are observed when electrons are transmitted between two edge channels. Such a phenomenon has been realized in 2D systems such as quantum point contacts, anti-dots and p-n junctions. Based on a theoretical investigation of the magnetotransport in stepped graphene, a new kind of Aharonov-Bohm interferometers is proposed herewith. Indeed, when a…
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Aharonov-Bohm interferences in the quantum Hall regime are observed when electrons are transmitted between two edge channels. Such a phenomenon has been realized in 2D systems such as quantum point contacts, anti-dots and p-n junctions. Based on a theoretical investigation of the magnetotransport in stepped graphene, a new kind of Aharonov-Bohm interferometers is proposed herewith. Indeed, when a strong magnetic field is applied in a proper direction, oppositely propagating edge states can be achieved in both terrace and facet zones of the step, leading to the interedge scatterings and hence strong Aharonov-Bohm oscillations in the conductance in the quantum Hall regime. Taking place in the unipolar regime, this interference is also predicted in stepped systems of other 2D layered materials.
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Submitted 20 June, 2019; v1 submitted 6 December, 2018;
originally announced December 2018.
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Imaging Dirac fermions flow through a circular Veselago lens
Authors:
Boris Brun,
Nicolas Moreau,
Sowmya Somanchi,
Viet-Hung Nguyen,
Kenji Watanabe,
Takashi Taniguchi,
Jean-Christophe Charlier,
Christoph Stampfer,
Benoit Hackens
Abstract:
Graphene charge carriers behave as relativistic massless fermions, thereby exhibiting a variety of counter-intuitive behaviors. In particular, at p-n junctions, they behave as photons encountering a negative index media, therefore experiencing a peculiar refraction known as Veselago lensing. However, the way Dirac fermions flow through a Veselago lens remains largely unexplored experimentally. Her…
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Graphene charge carriers behave as relativistic massless fermions, thereby exhibiting a variety of counter-intuitive behaviors. In particular, at p-n junctions, they behave as photons encountering a negative index media, therefore experiencing a peculiar refraction known as Veselago lensing. However, the way Dirac fermions flow through a Veselago lens remains largely unexplored experimentally. Here, a novel approach to create a movable and tunable circular p-n junction in graphene is proposed, using the polarized tip of a scanning gate microscope. Scanning the tip in the vicinity of a graphene constriction while recording the device conductance yields images related to the electron flow through a circular Veselago lens, revealing a high current density in the lens core, as well as two low current density zones along transport axis. Tight-binding simulations reveal the crucial role of the p-n junction smoothness on these phenomena. The present research adds new dimensions in the control and understanding of Dirac fermions optical elements, a prerequisite to engineer relativistic electron optics devices.
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Submitted 19 June, 2019; v1 submitted 7 November, 2018;
originally announced November 2018.
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Large phosphorene in-plane contraction induced by interlayer interactions in graphene-phosphorene heterostructures
Authors:
Benoit Van Troeye,
Aurélien Lherbier,
Jean-Christophe Charlier,
Xavier Gonze
Abstract:
Intralayer deformation in van der Waals (vdW) heterostructures is generally assumed to be negligible due to the weak nature of the interactions between the layers, especially when the interfaces are found incoherent. In the present work, graphene-phosphorene vdW-heterostructures are investigated with the Density Functional Theory (DFT). The challenge of treating nearly incommensurate (very large)…
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Intralayer deformation in van der Waals (vdW) heterostructures is generally assumed to be negligible due to the weak nature of the interactions between the layers, especially when the interfaces are found incoherent. In the present work, graphene-phosphorene vdW-heterostructures are investigated with the Density Functional Theory (DFT). The challenge of treating nearly incommensurate (very large) supercell in DFT is bypassed by considering different energetic quantities in the grand canonical ensemble, alternative to the formation energy, in order to take into account the mismatch elastic contribution of the different layers. In the investigated heterostructures, it is found that phosphorene contracts by ~4% in the armchair direction when compared to its free-standing form. This large contraction leads to important changes in term of electronic properties, with the direct electronic optical transition of phosphorene becoming indirect in specific vdW-heterostructures. More generally, such a contraction indicates strong substrate effects in supported or encapsulated phosphorene -neglected hitherto- and paves the way to substrate-controlled stress- tronic in such 2D crystal. In addition, the stability of these vdW-heterostructures are investigated as a function of the rotation angle between the layers and as a function of the stacking composition. The alignment of the specific crystalline directions of graphene and phosphorene is found energetically favored. In parallel, several several models based on DFT-estimated quantities are presented; they allow notably a better understanding of the global mutual accommodation of 2D materials in their corresponding interfaces, that is predicted to be non-negligible even in the case of incommensurate interfaces.
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Submitted 23 January, 2018;
originally announced January 2018.
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Klein tunneling and electron optics in Dirac-Weyl fermion systems with tilted energy dispersion
Authors:
Viet Hung Nguyen,
Jean-Christophe Charlier
Abstract:
The outstanding electronic properties of relativistic-like fermions have been extensively studied in solid state systems with isotropic linear dispersions such as graphene. Here, we show that 2D and 3D Dirac-Weyl (DW) materials exhibiting tilted energy dispersions could induce drastically different transport phenomena, compared to the non-tilted case. Indeed, the Klein tunneling of DW fermions of…
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The outstanding electronic properties of relativistic-like fermions have been extensively studied in solid state systems with isotropic linear dispersions such as graphene. Here, we show that 2D and 3D Dirac-Weyl (DW) materials exhibiting tilted energy dispersions could induce drastically different transport phenomena, compared to the non-tilted case. Indeed, the Klein tunneling of DW fermions of opposite chiralities is predicted to appear along two separated oblique directions. In addition, valley filtering and beam splitting effects are easily tailored by dopant engineering techniques while the refraction of electron waves is dramatically modified by the tilt, thus paving the way for emerging applications in electron optics and valleytronics.
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Submitted 18 March, 2018; v1 submitted 17 November, 2017;
originally announced November 2017.
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Electronic and vibrational properties of V$_2$C-based MXenes: from experiments to first-principles modeling
Authors:
Aurélie Champagne,
Lu Shi,
Thierry Ouisse,
Benoît Hackens,
Jean-Christophe Charlier
Abstract:
In the present work, the electronic and vibrational properties of both pristine V$_2$C and fully-terminated V$_2$CT$_2$ (where T = F, O, OH) 2D monolayers are investigated using density functional theory. Firstly, the atomic structures of V$_2$C-based MXene phases are optimized and their respective dynamical stabilities are discussed. Secondly, electronic band structures are computed indicating th…
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In the present work, the electronic and vibrational properties of both pristine V$_2$C and fully-terminated V$_2$CT$_2$ (where T = F, O, OH) 2D monolayers are investigated using density functional theory. Firstly, the atomic structures of V$_2$C-based MXene phases are optimized and their respective dynamical stabilities are discussed. Secondly, electronic band structures are computed indicating that V$_2$C is metallic as well as all the corresponding functionalized systems. Thirdly, the vibrational properties (phonon frequencies and spectra) of V$_2$C-based MXenes are computed thanks to density functional perturbation theory and reported for the first time. Both Raman (E$_g$, A$_{1g}$) and infrared active (E$_u$, A$_{2u}$) vibrational modes are predicted \textit{ab initio} with the aim to correlate the experimental Raman peaks with the calculated vibrational modes and to assign them with specific atomic motions. The effect of the terminal groups on the vibrational properties is emphasized as well as on the presence and position of the corresponding Raman peaks. Our results provide new insights for the identification and characterization of V$_2$C-based samples using Raman spectroscopy.
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Submitted 28 March, 2018; v1 submitted 19 October, 2017;
originally announced October 2017.
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The Raman fingerprint of rhombohedral graphite
Authors:
Abderrezak Torche,
Francesco Mauri,
Jean-Christophe Charlier,
Matteo Calandra
Abstract:
Multi-layer graphene with rhombohedral stacking is a promising carbon phase possibly displaying correlated states like magnetism or superconductivity due to the occurrence of a flat surface band at the Fermi level. Recently, flakes of thickness up to 17 layers were tentatively attributed ABC sequences although the Raman fingerprint of rhombohedral multilayer graphene is currently unknown and the 2…
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Multi-layer graphene with rhombohedral stacking is a promising carbon phase possibly displaying correlated states like magnetism or superconductivity due to the occurrence of a flat surface band at the Fermi level. Recently, flakes of thickness up to 17 layers were tentatively attributed ABC sequences although the Raman fingerprint of rhombohedral multilayer graphene is currently unknown and the 2D resonant Raman spectrum of Bernal graphite not understood. We provide a first principles description of the 2D Raman peak in three and four layers graphene (all stackings) as well as in Bernal, rhombohedral and an alternation of Bernal and rhombohedral graphite. We give practical prescriptions to identify long range sequences of ABC multi-layer graphene. Our work is a prerequisite to experimental non-destructive identification and synthesis of rhombohedral graphite.
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Submitted 8 June, 2017;
originally announced June 2017.
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Thermal and electronic transport characteristics of highly stretchable graphene kirigami
Authors:
Bohayra Mortazavi,
Aurélien Lherbier,
Zheyong Fan,
Ari Harju,
Timon Rabczuk,
Jean-Christophe Charlier
Abstract:
For centuries, cutting and folding the papers with special patterns have been used to build beautiful, flexible and complex three-dimensional structures. Inspired by the old idea of kirigami (paper cutting), and the outstanding properties of graphene, recently graphene kirigami structures were fabricated to enhance the stretchability of graphene. However, the possibility of further tuning the elec…
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For centuries, cutting and folding the papers with special patterns have been used to build beautiful, flexible and complex three-dimensional structures. Inspired by the old idea of kirigami (paper cutting), and the outstanding properties of graphene, recently graphene kirigami structures were fabricated to enhance the stretchability of graphene. However, the possibility of further tuning the electronic and thermal transport along the 2D kirigami structures have remained original to investigate. We therefore performed extensive atomistic simulations to explore the electronic, heat and load transfer along various graphene kirigami structures. The mechanical response and thermal transport were explored using classical molecular dynamics simulations. We then used a real-space Kubo-Greenwood formalism to investigate the charge transport characteristics in graphene kirigami. Our results reveal that graphene kirigami structures present highly anisotropic thermal and electrical transport. Interestingly, we show the possibility of tuning the thermal conductivity of graphene by four orders of magnitude. Moreover, we discuss the engineering of kirigami patterns to further enhance their stretchability by more than 10 times as compared with pristine graphene. Our study not only provides a general understanding concerning the engineering of electronic, thermal and mechanical response of graphene but more importantly can be useful to guide future studies with respect to the synthesis of other 2D material kirigami structures, to reach highly flexible and stretchable nanostructures with finely tunable electronic and thermal properties.
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Submitted 12 April, 2017;
originally announced April 2017.
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Optical Hall effect in strained graphene
Authors:
Viet Hung Nguyen,
Aurélien Lherbier,
Jean-Christophe Charlier
Abstract:
When passing an optical medium in the presence of a magnetic field, the polarization of light can be rotated either when reflected at the surface (Kerr effect) or when transmitted through the material (Faraday rotation). This phenomenon is a direct consequence of the optical Hall effect arising from the light-charge carrier interaction in solid state systems subjected to an external magnetic field…
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When passing an optical medium in the presence of a magnetic field, the polarization of light can be rotated either when reflected at the surface (Kerr effect) or when transmitted through the material (Faraday rotation). This phenomenon is a direct consequence of the optical Hall effect arising from the light-charge carrier interaction in solid state systems subjected to an external magnetic field, in analogy with the conventional Hall effect. The optical Hall effect has been explored in many thin films and also more recently in 2D layered materials. Here, an alternative approach based on strain engineering is proposed to achieve an optical Hall conductivity in graphene without magnetic field. Indeed, strain induces lattice symmetry breaking and hence can result in a finite optical Hall conductivity. First-principles calculations also predict this strain-induced optical Hall effect in other 2D materials. Combining with the possibility of tuning the light energy and polarization, the strain amplitude and direction, and the nature of the optical medium, large ranges of positive and negative optical Hall conductivities are predicted, thus opening the way to use these atomistic thin materials in novel specific opto-electro-mechanical devices.
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Submitted 29 November, 2016;
originally announced November 2016.
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Valley filtering and electronic optics using polycrystalline graphene
Authors:
Viet Hung Nguyen,
Samuel Dechamps,
Philippe Dollfus,
Jean-Christophe Charlier
Abstract:
In this Letter, both the manipulation of valley-polarized currents and the optical-like behaviors of Dirac fermions are theoretically explored in polycrystalline graphene. When strain is applied, the misorientation between two graphene domains separated by a grain boundary can result in a mismatch of their electronic structures. Such a discrepancy manifests itself in a strong breaking of the inver…
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In this Letter, both the manipulation of valley-polarized currents and the optical-like behaviors of Dirac fermions are theoretically explored in polycrystalline graphene. When strain is applied, the misorientation between two graphene domains separated by a grain boundary can result in a mismatch of their electronic structures. Such a discrepancy manifests itself in a strong breaking of the inversion symmetry, leading to perfect valley polarization in a wide range of transmission directions. In addition, these graphene domains act as different media for electron waves, offering the possibility to modulate and obtain negative refraction indexes.
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Submitted 13 October, 2016; v1 submitted 25 May, 2016;
originally announced May 2016.
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Transport properties through graphene grain boundaries: strain effects versus lattice symmetry
Authors:
Viet Hung Nguyen,
Trinh Xuan Hoang,
Philippe Dollfus,
Jean-Christophe Charlier
Abstract:
As most materials available in macroscopic quantities, graphene appears in a polycrystalline form and thus contains grain boundaries. In the present work, the effect of uniaxial strain on the electronic transport properties through graphene grain boundaries is investigated using atomistic simulations. A systematic picture of the transport properties with respect to the strain and the lattice symme…
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As most materials available in macroscopic quantities, graphene appears in a polycrystalline form and thus contains grain boundaries. In the present work, the effect of uniaxial strain on the electronic transport properties through graphene grain boundaries is investigated using atomistic simulations. A systematic picture of the transport properties with respect to the strain and the lattice symmetry of graphene domains on both sides of the boundary is provided. In particular, it is shown that the strain engineering can be used to open a finite transport gap in all graphene systems where two domains exhibit different orientations. This gap value is found to depend on the strain magnitude, on the strain direction and on the lattice symmetry of graphene domains. By choosing appropriately the strain direction, a large transport gap of a few hundred meV can be achieved when applying a small strain of only a few percents. For a specific class of graphene grain boundary systems, the strain engineering can also be used to reduce the scattering on defects and hence to significantly enhance the conductance. With a large strain-induced gap, these graphene heterostructures are proposed to be possible candidates for highly sensitive strain sensors, flexible transistors and p-n junctions with a strong non-linear I-V characteristics.
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Submitted 26 January, 2016;
originally announced January 2016.
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Velocity renormalization and Dirac cone multiplication in graphene superlattices with various barrier edge geometries
Authors:
Albert de Jamblinne de Meux,
Nicolas Leconte,
Jean-Christophe Charlier,
Aurélien Lherbier
Abstract:
The electronic properties of one-dimensional graphene superlattices strongly depend on the atomic size and orientation of the 1D external periodic potential. Using a tight-binding approach, we show that the armchair and zigzag directions in these superlattices have a different impact on the renormalization of the anisotropic velocity of the charge carriers. For symmetric potential barriers, the ve…
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The electronic properties of one-dimensional graphene superlattices strongly depend on the atomic size and orientation of the 1D external periodic potential. Using a tight-binding approach, we show that the armchair and zigzag directions in these superlattices have a different impact on the renormalization of the anisotropic velocity of the charge carriers. For symmetric potential barriers, the velocity perpendicular to the barrier is modified for the armchair direction while remaining unchanged in the zigzag case. For asymmetric barriers, the initial symmetry between the forward and backward momentum with respect to the Dirac cone symmetry is broken for the velocity perpendicular (armchair case) or parallel (zigzag case) to the barriers. At last, Dirac cone multiplication at the charge neutrality point occurs only for the zigzag geometry. In contrast, band gaps appear in the electronic structure of the graphene superlattice with barrier in the armchair direction.
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Submitted 10 August, 2015;
originally announced August 2015.
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Spin Transport in Hydrogenated Graphene
Authors:
David Soriano,
Dinh Van Tuan,
Simon M. -M. Dubois,
Martin Gmitra,
Aron W. Cummings,
Denis Kochan,
Frank Ortmann,
Jean-Christophe Charlier,
Jaroslav Fabian,
Stephan Roche
Abstract:
In this review we discuss the multifaceted problem of spin transport in hydrogenated graphene from a theoretical perspective. The current experimental findings suggest that hydrogenation can either increase or decrease spin lifetimes, which calls for clarification. We first discuss the spin-orbit coupling induced by local $σ-π$ re-hybridization and ${\bf sp}^{3}$ C-H defect formation together with…
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In this review we discuss the multifaceted problem of spin transport in hydrogenated graphene from a theoretical perspective. The current experimental findings suggest that hydrogenation can either increase or decrease spin lifetimes, which calls for clarification. We first discuss the spin-orbit coupling induced by local $σ-π$ re-hybridization and ${\bf sp}^{3}$ C-H defect formation together with the formation of a local magnetic moment. First-principles calculations of hydrogenated graphene unravel the strong interplay of spin-orbit and exchange couplings. The concept of magnetic scattering resonances, recently introduced \cite{Kochan2014} is revisited by describing the local magnetism through the self-consistent Hubbard model in the mean field approximation in the dilute limit, while spin relaxation lengths and transport times are computed using an efficient real space order N wavepacket propagation method. Typical spin lifetimes on the order of 1 nanosecond are obtained for 1 ppm of hydrogen impurities (corresponding to transport time about 50 ps), and the scaling of spin lifetimes with impurity density is described by the Elliott-Yafet mechanism. This reinforces the statement that magnetism is the origin of the substantial spin polarization loss in the ultraclean graphene limit.
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Submitted 7 April, 2015;
originally announced April 2015.
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Quantum transport in chemically functionalized graphene at high magnetic field: Defect-Induced Critical States and Breakdown of Electron-Hole Symmetry
Authors:
Nicolas Leconte,
Frank Ortmann,
Alessandro Cresti,
Jean-Christophe Charlier,
Stephan Roche
Abstract:
Unconventional magneto-transport fingerprints in the quantum Hall regime (with applied magnetic field from one to several tens of Tesla) in chemically functionalized graphene are reported. Upon chemical adsorption of monoatomic oxygen (from 0.5% to few percents), the electron-hole symmetry of Landau levels is broken, while a double-peaked conductivity develops at low-energy, resulting from the for…
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Unconventional magneto-transport fingerprints in the quantum Hall regime (with applied magnetic field from one to several tens of Tesla) in chemically functionalized graphene are reported. Upon chemical adsorption of monoatomic oxygen (from 0.5% to few percents), the electron-hole symmetry of Landau levels is broken, while a double-peaked conductivity develops at low-energy, resulting from the formation of critical states conveyed by the random network of defects-induced impurity states. Scaling analysis hints towards the existence of an additional zero-energy quantized Hall conductance plateau, which is here not connected to degeneracy lifting of Landau levels by sublattice symmetry breakage. This singularly contrasts with usual interpretation, and unveils a new playground for tailoring the fundamental characteristics of the quantum Hall effect.
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Submitted 15 May, 2014;
originally announced May 2014.
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Electrical conductivity measured in atomic carbon chains
Authors:
O. Cretu,
A. R. Botello-Mendez,
I. Janowska,
C. Pham-Huu,
J. -C. Charlier,
F. Banhart
Abstract:
The first electrical conductivity measurements of monoatomic carbon chains are reported in this study. The chains were obtained by unraveling carbon atoms from graphene ribbons while an electrical current flowed through the ribbon and, successively, through the chain. The formation of the chains was accompanied by a characteristic drop in the electrical conductivity. The conductivity of carbon cha…
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The first electrical conductivity measurements of monoatomic carbon chains are reported in this study. The chains were obtained by unraveling carbon atoms from graphene ribbons while an electrical current flowed through the ribbon and, successively, through the chain. The formation of the chains was accompanied by a characteristic drop in the electrical conductivity. The conductivity of carbon chains was much lower than previously predicted for ideal chains. First-principles calculations using both density functional and many-body perturbation theory show that strain in the chains determines the conductivity in a decisive way. Indeed, carbon chains are always under varying non-zero strain that transforms its atomic structure from cumulene to polyyne configuration, thus inducing a tunable band gap. The modified electronic structure and the characteristics of the contact to the graphitic periphery explain the low conductivity of the locally constrained carbon chain.
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Submitted 21 February, 2013;
originally announced February 2013.
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Transport properties of 2D graphene containing structural defects
Authors:
Aurelien Lherbier,
Simon M. -M. Dubois,
Xavier Declerck,
Yann-Michel Niquet,
Stephan Roche,
Jean-Christophe Charlier
Abstract:
We propose an extensive report on the simulation of electronic transport in 2D graphene in presence of structural defects. Amongst the large variety of such defects in sp$^2$ carbon-based materials, we focus on the Stone-Wales defect and on two divacancy-type reconstructed defects. First, based on ab initio calculations, a tight-binding model is derived to describe the electronic structure of thes…
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We propose an extensive report on the simulation of electronic transport in 2D graphene in presence of structural defects. Amongst the large variety of such defects in sp$^2$ carbon-based materials, we focus on the Stone-Wales defect and on two divacancy-type reconstructed defects. First, based on ab initio calculations, a tight-binding model is derived to describe the electronic structure of these defects. Then, semiclassical transport properties including the elastic mean free paths, mobilities and conductivities are computed using an order-N real-space Kubo-Greenwood method. A plateau of minimum conductivity ($σ^{min}_{sc}= 4e^2/πh$) is progressively observed as the density of defects increases. This saturation of the decay of conductivity to $σ^{min}_{sc}$ is associated with defect-dependent resonant energies. Finally, localization phenomena are captured beyond the semiclassical regime. An Anderson transition is predicted with localization lengths of the order of tens of nanometers for defect densities around 1%.
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Submitted 20 April, 2012;
originally announced April 2012.
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Localized state and charge transfer in nitrogen-doped graphene
Authors:
Frederic Joucken,
Yann Tison,
Jerome Lagoute,
Jacques Dumont,
Damien Cabosart,
Bing Zheng,
Vincent Repain,
Cyril Chacon,
Yann Girard,
Andres Rafael Botello-Mendez,
Sylvie Rousset,
Robert Sporken,
Jean-Christophe Charlier,
Luc Henrard
Abstract:
Nitrogen-doped epitaxial graphene grown on SiC(000?1) was prepared by exposing the surface to an atomic nitrogen flux. Using Scanning Tunneling Microscopy (STM) and Spectroscopy (STS), supported by Density Functional Theory (DFT) calculations, the simple substitution of carbon by nitrogen atoms has been identified as the most common do** configuration. High-resolution images reveal a reduction o…
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Nitrogen-doped epitaxial graphene grown on SiC(000?1) was prepared by exposing the surface to an atomic nitrogen flux. Using Scanning Tunneling Microscopy (STM) and Spectroscopy (STS), supported by Density Functional Theory (DFT) calculations, the simple substitution of carbon by nitrogen atoms has been identified as the most common do** configuration. High-resolution images reveal a reduction of local charge density on top of the nitrogen atoms, indicating a charge transfer to the neighboring carbon atoms. For the first time, local STS spectra clearly evidenced the energy levels associated with the chemical do** by nitrogen, localized in the conduction band. Various other nitrogen-related defects have been observed. The bias dependence of their topographic signatures demonstrates the presence of structural configurations more complex than substitution as well as hole-do**.
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Submitted 16 April, 2012;
originally announced April 2012.