Showing 1–5 of 5 results for author: Charar, S

GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions

Authors: J. Sadowski, P. Dluzewski, S. Kret, E. Janik, E. Lusakowska, J. Kanski, A. Presz, F. Terki, S. Charar, D. Tang

Abstract: GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs nanoislands, which can be controlled by the Mn flux and/or the substrate temperature. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, the nanowires combine… ▽ More GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs nanoislands, which can be controlled by the Mn flux and/or the substrate temperature. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, the nanowires combine one-dimensional properties with the magnetic properties of (Ga,Mn)As and provide natural, self assembled structures for nanospintronics. △ Less

Submitted 3 October, 2007; originally announced October 2007.

Comments: 13 pages, 6 figures

Journal ref: Nano Lett.; (Letter); 2007; 7(9); 2724 - 2728

High ferromagnetic phase transition temperatures in GaMnAs layers annealed under arsenic cap**

Authors: J. Sadowski, J. Z. Domagala, V. Osinniy, J. Kanski, M. Adell, L. Ilver, C. Hernandez, F. Terki, S. Charar, D. Maude

Abstract: Thin GaMnAs layers grown by molecular beam epitaxy were subjected to low-temperature post growth annealing, with an amorphous arsenic cap** layer deposited on the GaMnAs surface directly after the epitaxial growth. It is shown that the presence of arsenic cap** at the GaMnAs surface significantly shortens the post-growth annealing times and facilitates a complete out-diffusion of Mn intersti… ▽ More Thin GaMnAs layers grown by molecular beam epitaxy were subjected to low-temperature post growth annealing, with an amorphous arsenic cap** layer deposited on the GaMnAs surface directly after the epitaxial growth. It is shown that the presence of arsenic cap** at the GaMnAs surface significantly shortens the post-growth annealing times and facilitates a complete out-diffusion of Mn interstitials from GaMnAs volume. △ Less

Submitted 29 January, 2006; v1 submitted 26 January, 2006; originally announced January 2006.

Comments: 17 pages including 6 figures

Post-growth annealing of GaMnAs under As cap** - an alternative way to increase Tc

Authors: M. Adell, V. Stanciu, J. Kanski, L. Ilver, J. Sadowski, J. Z. Domagala, P. Svedlindh, F. Terki, C. Hernandez, S. Charar

Abstract: We demonstrate that in situ post-growth annealing of GaMnAs layers under As cap** is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in air or in N2 atmosphere practiced earlier. We demonstrate that in situ post-growth annealing of GaMnAs layers under As cap** is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in air or in N2 atmosphere practiced earlier. △ Less

Submitted 15 November, 2004; v1 submitted 24 June, 2004; originally announced June 2004.

Comments: 13 pages, 4 figures

Magnetic properties of GaMnAs single layers and GaInMnAs superlattices investigated at low temperature and high magnetic field

Authors: C. Hernandez, F. Terki, S. Charar, J. Sadowski, D. Maude, V. Stanciu, P. Svedlindh

Abstract: Magnetotransport properties of GaMnAs single layers and InGaMnAs/InGaAs superlattice structures were investigated at temperatures from 4 K to 300 K and magnetic fields up to 23 T to study the influence of carriers confinement through different structures. Both single layers and superlattice structures show paramagnetic-to-ferromagnetic phase transition. In GaMnAs/InGaAs superlattice beside the C… ▽ More Magnetotransport properties of GaMnAs single layers and InGaMnAs/InGaAs superlattice structures were investigated at temperatures from 4 K to 300 K and magnetic fields up to 23 T to study the influence of carriers confinement through different structures. Both single layers and superlattice structures show paramagnetic-to-ferromagnetic phase transition. In GaMnAs/InGaAs superlattice beside the Curie temperature (Tc ~ 40 K), a new phase transition is observed close to 13 K. △ Less

Submitted 20 June, 2003; originally announced June 2003.

Comments: 8 pages, 5 figures, Proceedings of the XXXII International School on the Physics of Semiconducting Compounds, Jaszowiec 2003, Poland

Eu-Eu exchange interaction and Eu distribution in Pb_(1-x)Eu_(x)Te from magnetization steps

Authors: Ewout ter Haar, Valdir Bindilatti, Nei F. Oliveira Jr., G. H. McCabe, Y. Shapira, Z. Golacki, S. Charar, M. Averous, E. J. McNiff Jr

Abstract: The magnetization of Pb_{1-x}Eu_{x}Te samples with x = 1.9, 2.6 and 6.0% was measured at 20 mK in fields up to 50 kOe, and at 0.6 K in fields up to 180 kOe. The 20 mK data show the magnetization steps (MSTs) arising from pairs and from triplets. The pair MSTs are used to obtain the dominant Eu-Eu antiferromagnetic exchange constant, J/k_{B} = -0.264 \pm 0.018 K. The exchange constant for triplet… ▽ More The magnetization of Pb_{1-x}Eu_{x}Te samples with x = 1.9, 2.6 and 6.0% was measured at 20 mK in fields up to 50 kOe, and at 0.6 K in fields up to 180 kOe. The 20 mK data show the magnetization steps (MSTs) arising from pairs and from triplets. The pair MSTs are used to obtain the dominant Eu-Eu antiferromagnetic exchange constant, J/k_{B} = -0.264 \pm 0.018 K. The exchange constant for triplets is the same. Comparison of the magnetization curves with theoretical simulations indicates that the Eu ions are not randomly distributed over all the cation sites. The deviation from a random distribution is much smaller if J is assumed to be the nearest-neighbor exchange constant J_{1} rather than the next-nearest-neighbor exchange constant J_{2}. On this basis, J is tentatively identified as J_{1}. To obtain agreement with the data, it must be assumed that the Eu ions tend to bunch together. Comparision with microprobe data indicates that the length scale for these concentration variations is smaller than a few micrometer. The theoretical simulations in the present work improve on those performed earlier by including clusters larger than three spins. △ Less

Submitted 11 July, 1997; originally announced July 1997.

Comments: 9 pages, 6 figs, Revtex, accepted for publication in Phys. Rev. B