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Direct comparison of domain wall behavior in Permalloy nanowires patterned by electron beam lithography and focused ion beam milling
Authors:
M. A. Basith,
S. McVitie,
D. McGrouther,
J. N. Chapman,
J. M. R. Weaver
Abstract:
Nominally identical permalloy nanowires, with widths down to 150 nm, were fabricated onto a single electron transparent Si$_{3}$N$_{4}$ membrane using electron beam lithography (EBL) and focused ion beam (FIB) milling. Transmission electron microscopy (TEM) experiments were performed to compare the nanostructures produced by these two techniques in what we believe is the first direct comparison of…
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Nominally identical permalloy nanowires, with widths down to 150 nm, were fabricated onto a single electron transparent Si$_{3}$N$_{4}$ membrane using electron beam lithography (EBL) and focused ion beam (FIB) milling. Transmission electron microscopy (TEM) experiments were performed to compare the nanostructures produced by these two techniques in what we believe is the first direct comparison of fabrication techniques for nominally identical nanowires. Both EBL and FIB methods produced high quality structures with edge roughness being of the order of the mean grain size 5 -10 nm observed in the continuous films. However, significant grain growth was observed along the edges of the FIB patterned nanowires. Lorentz TEM \emph{in situ} imaging was carried out to compare the magnetic behavior of the domain walls in the patterned nanowires with anti-notches present to pin domain walls. The overall process of domain wall pinning and depinning at the anti-notches showed consistent behaviour between nanowires fabricated by the two methods with the FIB structures having slightly lower characteristic fields compared to the EBL wires. However, a significant difference was observed in the formation of a vortex structure inside the anti-notches of the EBL nanowires after depinning of the domain walls. No vortex structure was seen inside the anti-notches of the FIB patterned nanowires. Results from micromagnetic simulations suggest that the vortex structure inside the anti-notch can be suppressed if the saturation magnetization (M$_{s}$) is reduced along the nanowires edges. Whilst the two fabrication methods show that well defined structures can be produced for the dimensions considered here, the differences in the magnetic behavior for nominally identical structures may be an issue if such structures are to be used as conduits for domain walls in potential memory and logic applications.
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Submitted 8 August, 2015;
originally announced August 2015.
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Reproducible domain wall pinning by linear non-topographic features in a ferromagnetic nanowire
Authors:
M. A. Basith,
S. McVitie,
D. McGrouther,
J. N. Chapman
Abstract:
We demonstrate that for multilayered magnetic nanowires, where the thickness and composition of the individual layers has been carefully chosen, domain walls can be pinned at non-topographic sites created purely by ion irradiation in a focused ion beam system. The pinning results from irradiation induced alloying leading to magnetic property modification only in the affected regions. Using Lorentz…
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We demonstrate that for multilayered magnetic nanowires, where the thickness and composition of the individual layers has been carefully chosen, domain walls can be pinned at non-topographic sites created purely by ion irradiation in a focused ion beam system. The pinning results from irradiation induced alloying leading to magnetic property modification only in the affected regions. Using Lorentz transmission electron microscopy, we have studied the pinning behavior of domain walls at the irradiation sites. Depending on the irradiation dose, a single line feature not only pinned the domain walls but also acted to control their structure and the strength of their pinning.
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Submitted 28 July, 2015;
originally announced July 2015.
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Microstructure of precipitates and magnetic domain structure in an annealed Co38Ni33Al29 shape memory alloy
Authors:
B. Bartova,
N. Wiese,
D. Schryvers,
J. N. Chapman,
S. Ignacova
Abstract:
The microstructure of a CoNiAl FSMA was determined by conventional transmission electron microscopy, electron diffraction studies together with advanced microscopy techniques and in-situ Lorentz microscopy. 10 to 60 nm sized rod-like precipitates of hcp $ε$-Co were confirmed to be present by HRTEM. The orientation relationship between the precipitates and B2 matrix is described by the Burgers or…
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The microstructure of a CoNiAl FSMA was determined by conventional transmission electron microscopy, electron diffraction studies together with advanced microscopy techniques and in-situ Lorentz microscopy. 10 to 60 nm sized rod-like precipitates of hcp $ε$-Co were confirmed to be present by HRTEM. The orientation relationship between the precipitates and B2 matrix is described by the Burgers orientation relationship. The crystal structure of the martensite obtained after cooling is tetragonal L10 with a (1-11) twinning plane. The magnetic domain structure was determined during an in-situ cooling experiment using the Fresnel mode of Lorentz microscopy. While transformation proceeds from B2 austenite to L10 martensite, new domains are nucleated leading to a decrease in domain width, with the magnetization lying predominantly along a single direction. It was possible to completely describe the relationship between magnetic domains and crystallographic directions in the austenite phase though complications existed for the martensite phase.
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Submitted 15 May, 2008;
originally announced May 2008.
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Direct observation of domain wall structures in curved permalloy wires containing an anti-notch
Authors:
C. W. Sandweg,
N. Wiese,
D. McGrouther,
S. J. Hermsdoerfer,
H. Schultheiss,
B. Leven,
S. McVitie,
B. Hillebrands,
J. N. Chapman
Abstract:
The formation and field response of head-to-head domain walls in curved permalloy wires, fabricated to contain a single anti-notch, have been investigated using Lorentz microscopy. High spatial resolution maps of the vector induction distribution in domain walls close to the anti-notch have been derived and compared with micromagnetic simulations. In wires of 10 nm thickness the walls are typica…
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The formation and field response of head-to-head domain walls in curved permalloy wires, fabricated to contain a single anti-notch, have been investigated using Lorentz microscopy. High spatial resolution maps of the vector induction distribution in domain walls close to the anti-notch have been derived and compared with micromagnetic simulations. In wires of 10 nm thickness the walls are typically of a modified asymmetric transverse wall type. Their response to applied fields tangential to the wire at the anti-notch location was studied. The way the wall structure changes depends on whether the field moves the wall away from or further into the notch. Higher fields are needed and much more distorted wall structures are observed in the latter case, indicating that the anti-notch acts as an energy barrier for the domain wall.
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Submitted 13 February, 2008;
originally announced February 2008.
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On the scaling behaviour of cross-tie domain wall structures in patterned NiFe elements
Authors:
N. Wiese,
S. McVitie,
J. N. Chapman,
A. Capella-Kort,
F. Otto
Abstract:
The cross-tie domain wall structure in micrometre and sub-micrometre wide patterned elements of NiFe, and a thickness range of 30 to 70nm, has been studied by Lorentz microscopy. Whilst the basic geometry of the cross-tie repeat units remains unchanged, their density increases when the cross-tie length is constrained to be smaller than the value associated with a continuous film. This occurs whe…
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The cross-tie domain wall structure in micrometre and sub-micrometre wide patterned elements of NiFe, and a thickness range of 30 to 70nm, has been studied by Lorentz microscopy. Whilst the basic geometry of the cross-tie repeat units remains unchanged, their density increases when the cross-tie length is constrained to be smaller than the value associated with a continuous film. This occurs when element widths are sufficiently narrow or when the wall is forced to move close to an edge under the action of an applied field. To a very good approximation the cross-tie density scales with the inverse of the distance between the main wall and the element edge. The experiments show that in confined structures, the wall constantly modifies its form and that the need to generate, and subsequently annihilate, extra vortex/anti-vortex pairs constitutes an additional source of hysteresis.
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Submitted 10 October, 2007;
originally announced October 2007.
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Diffusive and ballistic current spin-polarization in magnetron-sputtered L1o-ordered epitaxial FePt
Authors:
K. M. Seemann,
V. Baltz,
M. MacKenzie,
J. N. Chapman,
B. J. Hickey,
C. H. Marrows
Abstract:
We report on the structural, magnetic, and electron transport properties of a L1o-ordered epitaxial iron-platinum alloy layer fabricated by magnetron-sputtering on a MgO(001) substrate. The film studied displayed a long range chemical order parameter of S~0.90, and hence has a very strong perpendicular magnetic anisotropy. In the diffusive electron transport regime, for temperatures ranging from…
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We report on the structural, magnetic, and electron transport properties of a L1o-ordered epitaxial iron-platinum alloy layer fabricated by magnetron-sputtering on a MgO(001) substrate. The film studied displayed a long range chemical order parameter of S~0.90, and hence has a very strong perpendicular magnetic anisotropy. In the diffusive electron transport regime, for temperatures ranging from 2 K to 258 K, we found hysteresis in the magnetoresistance mainly due to electron scattering from magnetic domain walls. At 2 K, we observed an overall domain wall magnetoresistance of about 0.5 %. By evaluating the spin current asymmetry alpha = sigma_up / sigma_down, we were able to estimate the diffusive spin current polarization. At all temperatures ranging from 2 K to 258 K, we found a diffusive spin current polarization of > 80%. To study the ballistic transport regime, we have performed point-contact Andreev-reflection measurements at 4.2 K. We obtained a value for the ballistic current spin polarization of ~42% (which compares very well with that of a polycrystalline thin film of elemental Fe). We attribute the discrepancy to a difference in the characteristic scattering times for oppositely spin-polarized electrons, such scattering times influencing the diffusive but not the ballistic current spin polarization.
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Submitted 19 July, 2007;
originally announced July 2007.
