Current-induced deterministic switching of van der Waals ferromagnet at room temperature
Authors:
Shivam N. Kajale,
Thanh Nguyen,
Corson A. Chao,
David C. Bono,
Artittaya Boonkird,
Mingda Li,
Deblina Sarkar
Abstract:
Recent discovery of emergent magnetism in van der Waals magnetic materials (vdWMM) has broadened the material space for develo** spintronic devices for energy-efficient computation. While there has been appreciable progress in vdWMM discovery, with strong perpendicular magnetic anisotropy (PMA) and Curie temperatures exceeding room temperature, a solution for non-volatile, deterministic switchin…
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Recent discovery of emergent magnetism in van der Waals magnetic materials (vdWMM) has broadened the material space for develo** spintronic devices for energy-efficient computation. While there has been appreciable progress in vdWMM discovery, with strong perpendicular magnetic anisotropy (PMA) and Curie temperatures exceeding room temperature, a solution for non-volatile, deterministic switching of vdWMMs at room temperature has been missing, limiting the prospects of their adoption into commercial spintronic devices. Here, we report the first demonstration of current-controlled non-volatile, deterministic magnetization switching in a vdW magnetic material at room temperature. We have achieved spin-orbit torque (SOT) switching of the PMA vdW magnet Fe3GaTe2 using a Pt spin-Hall layer up to 320 K, with a threshold switching current density as low as $J_{sw} = 1.69\times10^6 A/cm^2$ at room temperature. We have also quantitatively estimated the anti-dam**-like SOT efficiency of our Fe3GaTe2/Pt bilayer system to be $ΞΎ_{DL}$ = 0.093, using second harmonic Hall voltage measurement technique. These results mark a crucial step in making vdW magnetic materials a viable choice for the development of scalable, future spintronic devices.
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Submitted 25 June, 2023;
originally announced June 2023.
