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Electrical manipulation of a single electron spin in CMOS with micromagnet and spin-valley coupling
Authors:
Bernhard Klemt,
Victor El-Homsy,
Martin Nurizzo,
Pierre Hamonic,
Biel Martinez,
Bruna Cardoso Paz,
Cameron spence,
Matthieu Dartiailh,
Baptiste Jadot,
Emmanuel Chanrion,
Vivien Thiney,
Renan Lethiecq,
Benoit Bertrand,
Heimanu Niebojewski,
Christopher Bäuerle,
Maud Vinet,
Yann-Michel Niquet,
Tristan Meunier,
Matias Urdampilleta
Abstract:
For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is the ideal candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fabricated fully by industrial CMOS standards is difficult without intermediate solutions. With a flexible back-end-of-line (BEOL) new functionalities such as micromagnets or superconducting…
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For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is the ideal candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fabricated fully by industrial CMOS standards is difficult without intermediate solutions. With a flexible back-end-of-line (BEOL) new functionalities such as micromagnets or superconducting circuits can be added in a post-CMOS process to study the physics of these devices or achieve proof of concepts. Once the process is established it can be incorporated in the foundry-compatible process flow. Here, we study a single electron spin qubit in a CMOS device with a micromagnet integrated in the flexible BEOL. We exploit the synthetic spin orbit coupling (SOC) to control the qubit via electric field and we investigate the spin-valley physics in the presence of SOC where we show an enhancement of the Rabi frequency at the spin-valley hotspot. Finally, we probe the high frequency noise in the system using dynamical decoupling pulse sequences and demonstrate that charge noise dominates the qubit decoherence in this range.
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Submitted 8 March, 2023;
originally announced March 2023.
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Probing charge noise in few electron CMOS quantum dots
Authors:
Cameron Spence,
Bruna Cardoso-Paz,
Vincent Michal,
Emmanuel Chanrion,
David J. Niegemann,
Baptiste Jadot,
Pierre-André Mortemousque,
Bernhard Klemt,
Vivien Thiney,
Benoit Bertrand,
Louis Hutin,
Christopher Bäuerle,
Franck Balestro,
Maud Vinet,
Yann-Michel Niquet,
Tristan Meunier,
Matias Urdampilleta
Abstract:
Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication.
Here we demonstrate in-depth characterization of the charge noise environment experienced by a quantum dot in a CMOS-fabricated silicon nanowire.
We probe the charge noise for different quantum dot c…
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Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication.
Here we demonstrate in-depth characterization of the charge noise environment experienced by a quantum dot in a CMOS-fabricated silicon nanowire.
We probe the charge noise for different quantum dot configurations, finding that it is possible to tune the charge noise over two orders of magnitude, ranging from 1 ueV^2 to 100 ueV^2. In particular, we show that the top interface and the reservoirs are the main sources of charge noise and their effect can be mitigated by controlling the quantum dot extension.
Additionally, we demonstrate a novel method for the measurement of the charge noise experienced by a quantum dot in the few electron regime.
We measure a comparatively higher charge noise value of 40 ueV^2 at the first electron, and demonstrate that the charge noise is highly dependent on the electron occupancy of the quantum dot.
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Submitted 5 September, 2022;
originally announced September 2022.
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Complete readout of two-electron spin states in a double quantum dot
Authors:
Martin Nurizzo,
Baptiste Jadot,
Pierre-André Mortemousque,
Vivien Thiney,
Emmanuel Chanrion,
David Niegemann,
Matthieu Dartiailh,
Arne Ludwig,
Andreas D. Wieck,
Christopher Bäuerle,
Matias Urdampilleta,
Tristan Meunier
Abstract:
We propose and demonstrate complete spin state readout of a two-electron system in a double quantum dot probed by an electrometer. The protocol is based on repetitive single shot measurements using Pauli spin blockade and our ability to tune on fast timescales the detuning and the interdot tunnel coupling between the GHz and sub-Hz regime. A sequence of three distinct manipulations and measurement…
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We propose and demonstrate complete spin state readout of a two-electron system in a double quantum dot probed by an electrometer. The protocol is based on repetitive single shot measurements using Pauli spin blockade and our ability to tune on fast timescales the detuning and the interdot tunnel coupling between the GHz and sub-Hz regime. A sequence of three distinct manipulations and measurements allows establishing if the spins are in S, Tzero, Tplus or Tminus state. This work points at a procedure to reduce the overhead for spin readout, an important challenge for scaling up spin qubit platforms.
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Submitted 1 September, 2022;
originally announced September 2022.
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Parity and singlet-triplet high fidelity readout in a silicon double quantum dot at 0.5 K
Authors:
David J. Niegemann,
Victor El-Homsy,
Baptiste Jadot,
Martin Nurizzo,
Bruna Cardoso-Paz,
Emmanuel Chanrion,
Matthieu Dartiailh,
Bernhard Klemt,
Vivien Thiney,
Christopher Bäuerle,
Pierre-André Mortemousque,
Benoit Bertrand,
Heimanu Niebojewski,
Maud Vinet,
Franck Balestro,
Tristan Meunier,
Matias Urdampilleta
Abstract:
We demonstrate singlet-triplet readout and parity readout allowing to distinguish T0 and the polarized triplet states. We achieve high fidelity spin readout with an average fidelity above $99.9\%$ for a readout time of $20~μ$s and $99\%$ for $4~μ$s at a temperature of $0.5~K$. We initialize a singlet state in a single dot with a fidelity higher than $99\%$ and separate the two electrons while keep…
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We demonstrate singlet-triplet readout and parity readout allowing to distinguish T0 and the polarized triplet states. We achieve high fidelity spin readout with an average fidelity above $99.9\%$ for a readout time of $20~μ$s and $99\%$ for $4~μ$s at a temperature of $0.5~K$. We initialize a singlet state in a single dot with a fidelity higher than $99\%$ and separate the two electrons while kee** the same spin state with $a \approx 95.6\%$ fidelity.
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Submitted 21 July, 2022;
originally announced July 2022.
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Controlled quantum dot array segmentation via a highly tunable interdot tunnel coupling
Authors:
Martin Nurizzo,
Baptiste Jadot,
Pierre-André Mortemousque,
Vivien Thiney,
Emmanuel Chanrion,
Matthieu Dartiailh,
Arne Ludwig,
Andreas D. Wieck,
Christopher Bäuerle,
Matias Urdampilleta,
Tristan Meunier
Abstract:
Recent demonstrations using electron spins stored in quantum dots array as qubits are promising for develo** a scalable quantum computing platform. An ongoing effort is therefore aiming at the precise control of the quantum dots parameters in larger and larger arrays which represents a complex challenge. Partitioning of the system with the help of the inter-dot tunnel barriers can lead to a simp…
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Recent demonstrations using electron spins stored in quantum dots array as qubits are promising for develo** a scalable quantum computing platform. An ongoing effort is therefore aiming at the precise control of the quantum dots parameters in larger and larger arrays which represents a complex challenge. Partitioning of the system with the help of the inter-dot tunnel barriers can lead to a simplification for tuning and offers a protection against unwanted charge displacement. In a triple quantum dot system, we demonstrate a nanosecond control of the inter-dot tunnel rate permitting to reach the two extreme regimes, large GHz tunnel coupling and sub-Hz isolation between adjacent dots. We use this novel development to isolate a sub part of the array while performing charge displacement and readout in the rest of the system. The degree of control over the tunnel coupling achieved in a unit cell should motivate future protocol development for tuning, manipulation and readout including this capability.
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Submitted 19 July, 2022;
originally announced July 2022.
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Spin-valley coupling anisotropy and noise in CMOS quantum dots
Authors:
Cameron Spence,
Bruna Cardoso Paz,
Bernhard Klemt,
Emmanuel Chanrion,
David J. Niegemann,
Baptiste Jadot,
Vivien Thiney,
Benoit Bertrand,
Heimanu Niebojewski,
Pierre-André Mortemousque,
Xavier Jehl,
Romain Maurand,
Silvano De Franceschi,
Maud Vinet,
Franck Balestro,
Christopher Bäuerle,
Yann-Michel Niquet,
Tristan Meunier,
Matias Urdampilleta
Abstract:
One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst maintaining high readout and gate fidelities. We demonstrate detection of a single electron spin using energy-selective readout in a CMOS-fabricated nanowire devi…
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One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst maintaining high readout and gate fidelities. We demonstrate detection of a single electron spin using energy-selective readout in a CMOS-fabricated nanowire device with an integrated charge detector. We measure a valley splitting of 0.3 meV and 0.16 meV in two similar devices. The anisotropy of the spin-valley mixing is measured and shown to follow the dependence expected from the symmetry of the local confinement, indicating low disorder in the region of the quantum dot. Finally the charge noise in the spin-valley coupling regime is investigated and found to induce fluctuations in the qubit energy in the range of $0.6GHz/\sqrt{Hz}$.
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Submitted 28 September, 2021;
originally announced September 2021.
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Enhanced spin coherence while displacing electron in a 2D array of quantum dots
Authors:
Pierre-André Mortemousque,
Baptiste Jadot,
Emmanuel Chanrion,
Vivien Thiney,
Christopher Bäuerle,
Arne Ludwig,
Andreas D. Wieck,
Matias Urdampilleta,
Tristan Meunier
Abstract:
The ability to shuttle coherently individual electron spins in arrays of quantum dots is a key procedure for the development of scalable quantum information platforms. It allows the use of sparsely populated electron spin arrays, envisioned to efficiently tackle the one- and two-qubit gate challenges. When the electrons are displaced in an array, they are submitted to site-dependent environment in…
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The ability to shuttle coherently individual electron spins in arrays of quantum dots is a key procedure for the development of scalable quantum information platforms. It allows the use of sparsely populated electron spin arrays, envisioned to efficiently tackle the one- and two-qubit gate challenges. When the electrons are displaced in an array, they are submitted to site-dependent environment interactions such as hyperfine coupling with substrate nuclear spins. Here, we demonstrate that the electron multi-directional displacement in a $3\times 3$ array of tunnel coupled quantum dots enhances the spin coherence time via the motional narrowing phenomenon. More specifically, up to 10 configurations are explored by the electrons to study the impact of the displacement on spin dynamics. An increase of the coherence time by a factor up to 10 is observed in case of fast and repetitive displacement. The physical mechanism responsible for the loss of coherence induced by displacement is quantitatively captured by a simple model and its implications on spin coherence properties during the electron displacement are discussed in the context of large-scale quantum circuits.
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Submitted 15 January, 2021;
originally announced January 2021.
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Distant spin entanglement via fast and coherent electron shuttling
Authors:
Baptiste Jadot,
Pierre-André Mortemousque,
Emmanuel Chanrion,
Vivien Thiney,
Arne Ludwig,
Andreas D. Wieck,
Matias Urdampilleta,
Christopher Bäuerle,
Tristan Meunier
Abstract:
In the quest for large-scale quantum computing, networked quantum computers offer a natural path towards scalability. Now that nearest neighbor entanglement has been demonstrated for electron spin qubits in semiconductors, on-chip long distance entanglement brings versatility to connect quantum core units. Here we realize the controlled and coherent transfer of a pair of entangled electron spins,…
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In the quest for large-scale quantum computing, networked quantum computers offer a natural path towards scalability. Now that nearest neighbor entanglement has been demonstrated for electron spin qubits in semiconductors, on-chip long distance entanglement brings versatility to connect quantum core units. Here we realize the controlled and coherent transfer of a pair of entangled electron spins, and demonstrate their remote entanglement when separated by a distance of 6 microns. Driven by coherent spin rotations induced by the electron displacement, high-contrast spin quantum interferences are observed and are a signature of the preservation of the entanglement all along the displacement procedure. This work opens the route towards fast on-chip deterministic interconnection of remote quantum bits in semiconductor quantum circuits.
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Submitted 6 April, 2020;
originally announced April 2020.
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Charge detection in an array of CMOS quantum dots
Authors:
Emmanuel Chanrion,
David J. Niegemann,
Benoit Bertrand,
Cameron Spence,
Baptiste Jadot,
**g Li,
Pierre-André Mortemousque,
Louis Hutin,
Romain Maurand,
Xavier Jehl,
Marc Sanquer,
Silvano De Franceschi,
Christopher Bäuerle,
Franck Balestro,
Yann-Michel Niquet,
Maud Vinet,
Tristan Meunier,
Matias Urdampilleta
Abstract:
The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenge resides in the detection of charges within the array. It is a prerequisite functionality to initialize a desired charge state an…
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The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenge resides in the detection of charges within the array. It is a prerequisite functionality to initialize a desired charge state and readout spins through spin-to-charge conversion mechanisms. In this paper, we use two methods based on either a single-lead charge detector, or a reprogrammable single electron transistor. Thanks to these methods, we study the charge dynamics and sensitivity by performing single shot detection of the charge. Finally, we can probe the charge stability at any node of a linear array and assess the Coulomb disorder in the structure. We find an electrochemical potential fluctuation induced by charge noise comparable to that reported in other silicon quantum dots.
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Submitted 3 April, 2020; v1 submitted 2 April, 2020;
originally announced April 2020.
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Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays
Authors:
L. Hutin,
B. Bertrand,
E. Chanrion,
H. Bohuslavskyi,
F. Ansaloni,
T. -Y. Yang,
J. Michniewicz,
D. J. Niegemann,
C. Spence,
T. Lundberg,
A. Chatterjee,
A. Crippa,
J. Li,
R. Maurand,
X. Jehl,
M. Sanquer,
M. F. Gonzalez-Zalba,
F. Kuemmeth,
Y. -M. Niquet,
S. De Franceschi,
M. Urdampilleta,
T. Meunier,
M. Vinet
Abstract:
We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spindependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent qua…
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We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spindependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundrycompatible Si MOS spin qubits.
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Submitted 20 December, 2019;
originally announced December 2019.
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Towards scalable silicon quantum computing
Authors:
M. Vinet,
L. Hutin,
B. Bertrand,
S. Barraud,
J. -M. Hartmann,
Y. -J. Kim,
V. Mazzocchi,
A. Amisse,
H. Bohuslavskyi,
L. Bourdet,
A. Crippa,
X. Jehl,
R. Maurand,
Y. -M. Niquet,
M. Sanquer,
B. Venitucci,
B. Jadot,
E. Chanrion,
P. -A. Mortemousque,
C. Spence,
M. Urdampilleta,
S. De Franceschi,
T. Meunier
Abstract:
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures.
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures.
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Submitted 20 December, 2019;
originally announced December 2019.
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Gate-Based High Fidelity Spin Read-out in a CMOS Device
Authors:
Matias Urdampilleta,
David J. Niegemann,
Emmanuel Chanrion,
Baptiste Jadot,
Cameron Spence,
Pierre-André Mortemousque,
1 Christopher Bäuerle,
Louis Hutin,
Benoit Bertrand,
Sylvain Barraud,
Romain Maurand,
Marc Sanquer,
Xavier Jehl,
Silvano De Franceschi,
Maud Vinet,
Tristan Meunier
Abstract:
The engineering of electron spin qubits in a compact unit cell embedding all quantum functionalities is mandatory for large scale integration. In particular, the development of a high-fidelity and scalable spin readout method remains an open challenge. Here we demonstrate high-fidelity and robust spin readout based on gate reflectometry in a CMOS device comprising one qubit dot and one ancillary d…
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The engineering of electron spin qubits in a compact unit cell embedding all quantum functionalities is mandatory for large scale integration. In particular, the development of a high-fidelity and scalable spin readout method remains an open challenge. Here we demonstrate high-fidelity and robust spin readout based on gate reflectometry in a CMOS device comprising one qubit dot and one ancillary dot coupled to an electron reservoir to perform readout. This scalable method allows us to read out a spin with a fidelity above 99% for 1 ms integration time. To achieve such fidelity, we exploit a latched spin blockade mechanism that requires electron exchange between the ancillary dot and the reservoir. We show that the demonstrated high read-out fidelity is fully preserved up to 0.5 K. This results holds particular relevance for the future co-integration of spin qubits and classical control electronics.
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Submitted 12 September, 2018;
originally announced September 2018.
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Coherent control of individual electron spins in a two dimensional array of quantum dots
Authors:
Pierre-Andre Mortemousque,
Emmanuel Chanrion,
Baptiste Jadot,
Hanno Flentje,
Arne Ludwig,
Andreas D. Wieck,
Matias Urdampilleta,
Christopher Bauerle,
Tristan Meunier
Abstract:
The ability to manipulate coherently individual quantum objects organized in arrays is a prerequisite to any scalable quantum information platform. For electron spin qubits, it requires the fine tuning of large arrays of tunnel-coupled quantum dots. The cumulated efforts in linear dot arrays have permitted the recent realization of quantum simulators and multi-electron spin coherent manipulation.…
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The ability to manipulate coherently individual quantum objects organized in arrays is a prerequisite to any scalable quantum information platform. For electron spin qubits, it requires the fine tuning of large arrays of tunnel-coupled quantum dots. The cumulated efforts in linear dot arrays have permitted the recent realization of quantum simulators and multi-electron spin coherent manipulation. However, the two-dimensional scaling of such implementations remains undemonstrated while being compulsory to resolve complex quantum matter problems or process quantum information. Here, we demonstrate the two-dimensional coherent control of individual electron spins in a 3x3 array of tunnel-coupled quantum dots. More specifically, we focus on several key quantum functionalities of such control: charge deterministic displacement, local spin readout, local coherent exchange manipulation between two electron spins trapped in adjacent dots, and coherent multi-directional spin shuttling over distances of several microns. This work lays the foundations for exploiting a two-dimensional array of electron spins for quantum simulation and information processing.
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Submitted 19 August, 2018;
originally announced August 2018.
