Showing 1–2 of 2 results for author: Chang, Z J

Anomalous k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures

Authors: Ikai Lo, M. H. Gau, J. K. Tsai, Y. L. Chen, Z. J. Chang, W. T. Wang, J. C. Chiang, T. Aggerstam

Abstract: We have confirmed the k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures. Anomalous beating pattern in Shubnikov-de Haas measurements arises from the interference of Rashba and Dresselhaus spin-orbit interactions. The dominant mechanism for the k-dependent spin splitting at high values of k is attributed to Dresselhaus term which is enhanced by the Delta C1-Delta C3 coupling o… ▽ More We have confirmed the k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures. Anomalous beating pattern in Shubnikov-de Haas measurements arises from the interference of Rashba and Dresselhaus spin-orbit interactions. The dominant mechanism for the k-dependent spin splitting at high values of k is attributed to Dresselhaus term which is enhanced by the Delta C1-Delta C3 coupling of wurtzite band folding effect. △ Less

Submitted 9 November, 2006; v1 submitted 15 September, 2006; originally announced September 2006.

Study of two-subband population in Fe-doped AlxGa1-xN/GaN heterostructures by persistent photoconductivity effect

Authors: Ikai Lo, J. K. Tsai, M. H. Gau, Y. L. Chen, Z. J. Chang, W. T. Wang, J. C. Chiang, K. R. Wang, Chun-Nan Chen, T. Aggerstam

Abstract: The electronic properties of Fe-doped Al0.31Ga0.69N/GaN heterostructures have been studied by Shubnikov-de Haas measurement. Two subbands of the two-dimensional electron gas in the hetero-interface were populated. After the low temperature illumination, the electron density increases from 11.99 x 1012 cm-2 to 13.40 x 1012 cm-2 for the first subband and from 0.66 x 1012 cm-2 to 0.94 x 1012 cm-2 f… ▽ More The electronic properties of Fe-doped Al0.31Ga0.69N/GaN heterostructures have been studied by Shubnikov-de Haas measurement. Two subbands of the two-dimensional electron gas in the hetero-interface were populated. After the low temperature illumination, the electron density increases from 11.99 x 1012 cm-2 to 13.40 x 1012 cm-2 for the first subband and from 0.66 x 1012 cm-2 to 0.94 x 1012 cm-2 for the second subband. The persistent photoconductivity effect (~13% increase) is mostly attributed to the Fe-related deep-donor level in GaN layer. The second subband starts to populate when the first subband is filled at a density n1 = 9.40 x 1012 cm-2. We calculate the energy separation between the first and second subbands to be 105 meV. △ Less

Submitted 14 September, 2006; originally announced September 2006.