Showing 1–16 of 16 results for author: Chang, A M

Novel Differential Conductance Oscillations in Asymmetric Quantum Point Contacts

Authors: Hao Zhang, Phillip M. Wu, Albert M. Chang

Abstract: Small differential conductance oscillations as a function of source-drain bias were observed and systematically studied in an asymmetric quantum point contact (QPC). These oscillations become significantly suppressed in a small in-plane magnetic field ($\sim~0.7~T$) or at higher temperatures ($\sim~800~mK$). Qualitatively, their temperature evolution can be simulated numerically based on smearing… ▽ More Small differential conductance oscillations as a function of source-drain bias were observed and systematically studied in an asymmetric quantum point contact (QPC). These oscillations become significantly suppressed in a small in-plane magnetic field ($\sim~0.7~T$) or at higher temperatures ($\sim~800~mK$). Qualitatively, their temperature evolution can be simulated numerically based on smearing of the Fermi distribution, whereas features near zero-bias cannot. Single particle scenarios are unsatisfactory in accounting for the oscillations, suggesting that they are likely caused by electron and spin correlation effects. △ Less

Submitted 5 January, 2015; v1 submitted 18 September, 2014; originally announced September 2014.

Comments: 5 figures

Journal ref: Phys. Rev. B 91, 195150 (2015)

Observation of Kondo Effect in a Quadruple Quantum Dots

Authors: Runan Shang, Hai-Ou Li, Gang Cao, Guodong Yu, Ming Xiao, Tao Tu, Guang-Can Guo, Hongwen Jiang, A. M. Chang, Guo-** Guo

Abstract: We investigate the Kondo effect in a quadruple quantum dot device of coupled-double quantum dots (DQDs), which simultaneously contains intra-DQDs and inter-DQDs coupling. A variety of novel behaviors are observed. The differential conductance dI/dV is measured in the upper DQDs as a function of source drain bias. It is found to exhibit multiple peaks, including a zero-bias peak, where the number o… ▽ More We investigate the Kondo effect in a quadruple quantum dot device of coupled-double quantum dots (DQDs), which simultaneously contains intra-DQDs and inter-DQDs coupling. A variety of novel behaviors are observed. The differential conductance dI/dV is measured in the upper DQDs as a function of source drain bias. It is found to exhibit multiple peaks, including a zero-bias peak, where the number of peaks exceeds five. Alternatively, tuning the lower DQDs yielded regions of four peaks. In addition, a Kondo-effect switcher is demonstrated, using the lower DQDs as the controller. △ Less

Submitted 9 December, 2013; originally announced December 2013.

Comments: 14 pages including 5 figures

Quasibound States and Evidence for a Spin 1 Kondo Effect in Asymmetric Quantum Point Contacts

Authors: Hao Zhang, Phillip M. Wu, Albert M. Chang

Abstract: Linear conductance below $2e^2/h$ shows resonance peaks in highly asymmetric quantum point contacts (QPCs). As the channel length increases, the number of peaks also increases. At the same time, differential conductance exhibits zero bias anomalies (ZBAs) in correspondence with every other peak in the linear conductance. This even odd effect, observable in the longer channels, is consistent with t… ▽ More Linear conductance below $2e^2/h$ shows resonance peaks in highly asymmetric quantum point contacts (QPCs). As the channel length increases, the number of peaks also increases. At the same time, differential conductance exhibits zero bias anomalies (ZBAs) in correspondence with every other peak in the linear conductance. This even odd effect, observable in the longer channels, is consistent with the formation of quasi-localized states within the QPC. In rare cases, triple peaks are observed, indicating the formation of a spin one Kondo effect when the electron filling number is even. Changing the gate voltage tunes this spin triplet to a singlet which exhibits no ZBA. The triple-peak provides the first evidence suggestive of a spin singlet triplet transition in a QPC, and the presence of a ferromagnetic spin interaction between electrons. △ Less

Submitted 29 April, 2013; v1 submitted 9 November, 2012; originally announced November 2012.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. B 88, 075311 (2013)

Retrap** Current, Self-Heating, and Hysteretic Current-Voltage Curves in Ultra-Narrow Superconducting Aluminum Nanowires

Authors: Peng Li, Phillip M. Wu, Yuriy Bomze, Ivan V. Borzenets, Gleb Finkelstein, A. M. Chang

Abstract: Hysteretic I-V (current-voltage) is studied in narrow Al nanowires. The nanowires have a cross section as small as 50 nm^2. We focus on the retap** current in a down-sweep of the current, at which a nanowire re-enters the superconducting state from a normal state. The retrap** current is found to be significantly smaller than the switching current at which the nanowire switches into the normal… ▽ More Hysteretic I-V (current-voltage) is studied in narrow Al nanowires. The nanowires have a cross section as small as 50 nm^2. We focus on the retap** current in a down-sweep of the current, at which a nanowire re-enters the superconducting state from a normal state. The retrap** current is found to be significantly smaller than the switching current at which the nanowire switches into the normal state from a superconducting state during a current up-sweep. For wires of different lengths, we analyze the heat removal due to various processes, including electronic and phonon processes. For a short wires 1.5 um in length, electronic thermal conduction is effective; for longer wires 10um in length, phonon conduction becomes important. We demonstrate that the measured retrap** current as a function of temperature can be quantitatively accounted for by the selfheating occurring in the normal portions of the nanowires to better than 20 % accuracy. For the phonon processes, the extracted thermal conduction parameters support the notion of a reduced phase-space below 3-dimensions, consistent with the phonon thermal wavelength having exceeded the lateral dimensions at temperatures below ~ 1.3K. Nevertheless, surprisingly the best fit was achieved with a functional form corresponding to 3-dimensional phonons, albeit requiring parameters far exceeding known values in the literature. △ Less

Submitted 18 June, 2011; originally announced June 2011.

Comments: 8 pages, 6 figures, submitted to Physical Review B

Gates controlled parallel-coupled double quantum dot on both single layer and bilayer graphene

Authors: Lin-Jun Wang, Guo-** Guo, Da Wei, Gang Cao, Tao Tu, Ming Xiao, Guang-Can Guo, A. M. Chang

Abstract: Here we report the fabrication and quantum transport measurements of gates controlled parallel-coupled double quantum dot on both bilayer and single layer graphene. It is shown that the interdot coupling strength of the parallel double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the grap… ▽ More Here we report the fabrication and quantum transport measurements of gates controlled parallel-coupled double quantum dot on both bilayer and single layer graphene. It is shown that the interdot coupling strength of the parallel double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the graphene parallel-coupled double dot can be extracted from the honeycomb charge stability diagrams revealed through the transport measurements. △ Less

Submitted 21 April, 2011; v1 submitted 20 April, 2011; originally announced April 2011.

Comments: 10 pages, 6 figures

Evidence for the Formation of Quasi-Bound-State in an Asymmetrical Quantum Point Contact

Authors: Phillip M Wu, Peng Li, Albert M Chang

Abstract: Features below the first conductance plateau in ballistic quantum point contacts (QPCs) are often ascribed to electron interaction and spin effects within the single mode limit. In QPCs with a highly asymmetric geometry, we observe sharp resonance peaks when the point contacts are gated to the single mode regime, and surprisingly, under certain gating conditions, a complete destruction of the 2e^2… ▽ More Features below the first conductance plateau in ballistic quantum point contacts (QPCs) are often ascribed to electron interaction and spin effects within the single mode limit. In QPCs with a highly asymmetric geometry, we observe sharp resonance peaks when the point contacts are gated to the single mode regime, and surprisingly, under certain gating conditions, a complete destruction of the 2e^2/h, first quantum plateau. The temperature evolution of the resonances suggest non-Fermi liquid behavior, while the overall nonlinear characterizations reveal features reminiscent of the 0.7 effect. We attribute these unusual behaviors to the formation of a quasi bound state, which is stabilized by a momentum-mismatch accentuated by asymmetry. △ Less

Submitted 2 July, 2011; v1 submitted 1 July, 2010; originally announced July 2010.

Comments: 5 pages, 5 figures

Journal ref: Physical Review B 85, 085305 2012

Single Phase Slip Limited Switching Current in 1-Dimensional Superconducting Al Nanowires

Authors: Peng Li, Phillip M. Wu, Yuriy Bomze, Ivan V. Borzenets, Gleb Finkelstein, A. M. Chang

Abstract: An Aluminum nanowire switches from superconducting to normal as the current is increased in an upsweep. The switching current (I_s) averaged over upsweeps approximately follows the depairing critical current (I_c) but falls below it. Fluctuations in I_s exhibit three distinct regions of behaviors and are non-monotonic in temperature: saturation well below the critical temperature T_c, an increase… ▽ More An Aluminum nanowire switches from superconducting to normal as the current is increased in an upsweep. The switching current (I_s) averaged over upsweeps approximately follows the depairing critical current (I_c) but falls below it. Fluctuations in I_s exhibit three distinct regions of behaviors and are non-monotonic in temperature: saturation well below the critical temperature T_c, an increase as T^{2/3} at intermediate temperatures, and a rapid decrease close to T_c. Heat dissipation analysis indicates that a single phase slip is able to trigger switching at low and intermediate temperatures, whereby the T^{2/3} dependence arises from the thermal activation of a phase slip, while saturation at low temperatures provides striking evidence that the phase slips by macroscopic quantum tunneling. △ Less

Submitted 18 June, 2011; v1 submitted 2 June, 2010; originally announced June 2010.

Comments: 4 pages, 4 figures, submitted to Physical Review Letters

Crystal orientation and thickness dependence of superconductivity on tetragonal FeSe1-x thin films

Authors: M. J. Wang, J. Y. Luo, T. W. Huang, H. H. Chang, T. K. Chen, F. C. Hsu, C. T Wu, P. M. Wu, A. M. Chang, M. K. Wu

Abstract: Superconductivity was recently found in the simple tetragonal FeSe structure. Recent studies suggest that FeSe is unconventional, with the symmetry of the superconducting pairing state still under debate. To tackle these problems, clean single crystals and thin films are required. Here we report the fabrication of superconducting beta-phase FeSe1-x thin films on different substrates using a puls… ▽ More Superconductivity was recently found in the simple tetragonal FeSe structure. Recent studies suggest that FeSe is unconventional, with the symmetry of the superconducting pairing state still under debate. To tackle these problems, clean single crystals and thin films are required. Here we report the fabrication of superconducting beta-phase FeSe1-x thin films on different substrates using a pulsed laser deposition (PLD) technique. Quite interestingly, the crystal orientation, and thus, superconductivity in these thin films is sensitive to the growth temperature. At 320C, films grow preferably along c-axis, but the onset of superconductivity depends on film thickness. At 500C, films grow along (101), with little thickness dependence. These results suggest that the low temperature structural deformation previously found is crucial to the superconductivity of this material. △ Less

Submitted 12 April, 2009; originally announced April 2009.

Electron-mediated ferromagnetism and small spin-orbit interaction in a molecular-beam-epitaxy grown n-type $GaAs/Al_{0.3}Ga_{0.7}As$ heterostructure with Mn $δ$-do**

Authors: A. Bove, F. Altomare, N. B. Kundtz, Albert M. Chang, Y. J. Cho, X. Liu, J. Furdyna

Abstract: We report the first evidence of electron-mediated ferromagnetism in a molecular-beam-epitaxy (MBE) grown $GaAs/Al_{0.3}Ga_{0.7}As$ heterostructure with Mn $δ$-do**. The interaction between the magnetic dopants (Mn) and the Two-Dimensional Electron Gas (2DEG) realizes magnetic ordering when the temperature is below the Curie temperature ($T_{C} \sim 1.7K$) and the 2DEG is brought in close proxi… ▽ More We report the first evidence of electron-mediated ferromagnetism in a molecular-beam-epitaxy (MBE) grown $GaAs/Al_{0.3}Ga_{0.7}As$ heterostructure with Mn $δ$-do**. The interaction between the magnetic dopants (Mn) and the Two-Dimensional Electron Gas (2DEG) realizes magnetic ordering when the temperature is below the Curie temperature ($T_{C} \sim 1.7K$) and the 2DEG is brought in close proximity to the Mn layer by gating. The Anomalous Hall Effect (AHE) contribution to the total Hall resistance is shown to be about three to four orders of magnitude smaller than in the case of hole-mediated ferromagnetism indicating the presence of small spin-orbit interaction. △ Less

Submitted 2 July, 2008; v1 submitted 26 February, 2008; originally announced February 2008.

Comments: 4 pages with 4 figures, to be submitted to Physical Review Letters, revised version changed some content

A novel technique to make Ohmic contact to a buried two-dimensional electron gas in a molecular-beam-epitaxy grown $GaAs/Al_{0.3}Ga_{0.7}As$ heterostructure with Mn $δ$-do**

Authors: A. Bove, F. Altomare, N. B. Kundtz, Albert M. Chang, Y. J. Cho, X. Liu, J. Furdyna

Abstract: We report on the growth and characterization of a new Diluted Magnetic Semiconductor (DMS) heterostructure that presents a Two-Dimensional Electron Gas (2DEG) with a carrier density $n \sim 1.08 \times 10^{12} cm^{-2}$ and a mobility $μ\sim 600 cm^{2} / (Vs)$ at T $\sim$ 4.2K. As far as we know this is the highest mobility value reported in the literature for GaMnAs systems. A novel technique wa… ▽ More We report on the growth and characterization of a new Diluted Magnetic Semiconductor (DMS) heterostructure that presents a Two-Dimensional Electron Gas (2DEG) with a carrier density $n \sim 1.08 \times 10^{12} cm^{-2}$ and a mobility $μ\sim 600 cm^{2} / (Vs)$ at T $\sim$ 4.2K. As far as we know this is the highest mobility value reported in the literature for GaMnAs systems. A novel technique was developed to make Ohmic contact to the buried 2DEG without destroying the magnetic properties of our crystal. △ Less

Submitted 18 July, 2008; v1 submitted 26 February, 2008; originally announced February 2008.

Comments: 5 pages with 6 figures, to be submitted to Journal of Applied Physics, worked on figures

Spin dependent resonant tunneling through 6 micron diameter double barrier resonant tunneling diode

Authors: Z. L. Fang, P. Wu, N. Kundtz, A. M. Chang, X. Y. Liu, J. K. Furdyna

Abstract: A vertical resonant tunneling diode (RTD) based on the paramagnetic Zn1-x-yMnyCdxSe system has been fabricated with a pillar diameter down to ~ 6 micron. The diode exhibits high quality resonant tunneling characteristics through the electron sub-band of the quantum well at a temperature of 4.2K, where a clear phonon replica was observable in addition to the primary peak. Both peaks show a giant… ▽ More A vertical resonant tunneling diode (RTD) based on the paramagnetic Zn1-x-yMnyCdxSe system has been fabricated with a pillar diameter down to ~ 6 micron. The diode exhibits high quality resonant tunneling characteristics through the electron sub-band of the quantum well at a temperature of 4.2K, where a clear phonon replica was observable in addition to the primary peak. Both peaks show a giant Zeeman splitting in an applied magnetic field. Employing a self-consistent real-time Green's function method, the current-voltage characteristic was simulated, showing good agreement with the measured result. △ Less

Submitted 10 May, 2007; v1 submitted 8 May, 2007; originally announced May 2007.

Comments: 3 pages with 3 pictures, submitted to Appl. Phys. Lett

Low frequency noise statistics for the breakdown characterization of ultra-thin gate oxides

Authors: N. Z. Butt, A. M. Chang, H. Raza, R. Bashir, J. Liu, D. L. Kwong

Abstract: We have investigated the statistics of low frequency noise in the tunneling current of ultrathin oxides (2.5nm-4nm) in metal oxide semiconductor capacitors as a function of the applied voltage stress. The statistical analysis includes (i) non-Gaussianity (nG), which is a measure of the degree of temporal correlation in the noise, and (ii) ratio of integrated noise power to the DC leakage current… ▽ More We have investigated the statistics of low frequency noise in the tunneling current of ultrathin oxides (2.5nm-4nm) in metal oxide semiconductor capacitors as a function of the applied voltage stress. The statistical analysis includes (i) non-Gaussianity (nG), which is a measure of the degree of temporal correlation in the noise, and (ii) ratio of integrated noise power to the DC leakage current (R). The occurrence of high peaks in nG indicates the appearance of new percolation paths, and the subsequent conduction through these paths is indicated by R. Our results show that the nG and R characteristics are generic for the oxides of different thickness and growth quality and have the potential, in conjunction with leakage itself, of being used as a prognosticator of oxide reliability. △ Less

Submitted 16 August, 2005; originally announced August 2005.

Comments: 4 pages

Journal ref: Appl. Phys. Lett. 88, 112901 (2006)

Evidence for Macroscopic Quantum Tunneling of Phase Slips in Long One-Dimensional Superconducting Al Wires

Authors: Fabio Altomare, Albert M. Chang, Michael R. Melloch, Yuguang Hong, Charles W. Tu

Abstract: Quantum phase slips have received much attention due to their relevance to superfluids in reduced dimensions and to models of cosmic string production in the Early Universe. Their establishment in one-dimensional superconductors has remained controversial. Here we study the nonlinear voltage-current characteristics and linear resistance in long superconducting Al wires with lateral dimensions… ▽ More Quantum phase slips have received much attention due to their relevance to superfluids in reduced dimensions and to models of cosmic string production in the Early Universe. Their establishment in one-dimensional superconductors has remained controversial. Here we study the nonlinear voltage-current characteristics and linear resistance in long superconducting Al wires with lateral dimensions $\sim$ 5 nm. We find that, in a magnetic field and at temperatures well below the superconducting transition, the observed behaviors can be described by the non-classical, macroscopic quantum tunneling of phase slips, and are inconsistent with the thermal-activation of phase slips. △ Less

Submitted 26 March, 2007; v1 submitted 31 May, 2005; originally announced May 2005.

Comments: 4 pages, 4 figures, submitted to Phys. Rev. Lett. Manuscript, figure and EPAPS have been revised to streamline the presentation. Added erratum Fixed title in the erratum

Journal ref: Phys. Rev. Lett 97, 017001 (2006)

Ultra narrow AuPd and Al wires

Authors: Fabio Altomare, Albert M. Chang, Michael R. Melloch, Yuguang Hong, Charles W. Tu

Abstract: In this letter we discuss a novel and versatile template technique aimed to the fabrication of sub-10 nm wide wires. Using this technique, we have successfully measured AuPd wires, 12 nm wide and as long as 20 $μ$m. Even materials that form a strong superficial oxide, and thus not suited to be used in combination with other techniques, can be successfully employed. In particular we have measured… ▽ More In this letter we discuss a novel and versatile template technique aimed to the fabrication of sub-10 nm wide wires. Using this technique, we have successfully measured AuPd wires, 12 nm wide and as long as 20 $μ$m. Even materials that form a strong superficial oxide, and thus not suited to be used in combination with other techniques, can be successfully employed. In particular we have measured Al wires, with lateral width smaller or comparable to 10 nm, and length exceeding 10 $μ$m. △ Less

Submitted 2 March, 2007; v1 submitted 8 December, 2004; originally announced December 2004.

Comments: 4 pages, 4 figures. Pubblished in APL 86, 172501 (2005). Added erratum and revised Fig.4

Transition between Quantum States in a Parallel-Coupled Double-Quantum-Dot

Authors: J. C. Chen, A. M. Chang, M. R. Melloch

Abstract: Strong electron and spin correlations in a double-quantum-dot (DQD) can give rise to different quantum states. We observe a continuous transition from a Kondo state exhibiting a single-peak Kondo resonance to another exhibiting a double peak by increasing the inter-dot-coupling (t) in a parallel-coupled DQD. The transition into the double-peak state provides evidence for spin-entanglement betwee… ▽ More Strong electron and spin correlations in a double-quantum-dot (DQD) can give rise to different quantum states. We observe a continuous transition from a Kondo state exhibiting a single-peak Kondo resonance to another exhibiting a double peak by increasing the inter-dot-coupling (t) in a parallel-coupled DQD. The transition into the double-peak state provides evidence for spin-entanglement between the excess-electron on each dot. Toward the transition, the peak splitting merges and becomes substantially smaller than t because of strong Coulomb effects. Our device tunability bodes well for future quantum computation applications. △ Less

Submitted 13 May, 2003; originally announced May 2003.

Comments: 5 pages, 4 figures

Weak-Localization in Chaotic Versus Non-Chaotic Cavities: A Striking Difference in the Line Shape

Authors: A. M. Chang, H. U. Baranger, L. N. Pfeiffer, K. W. West

Abstract: We report experimental evidence that chaotic and non-chaotic scattering through ballistic cavities display distinct signatures in quantum transport. In the case of non-chaotic cavities, we observe a linear decrease in the average resistance with magnetic field which contrasts markedly with a Lorentzian behavior for a chaotic cavity. This difference in line-shape of the weak-localization peak is… ▽ More We report experimental evidence that chaotic and non-chaotic scattering through ballistic cavities display distinct signatures in quantum transport. In the case of non-chaotic cavities, we observe a linear decrease in the average resistance with magnetic field which contrasts markedly with a Lorentzian behavior for a chaotic cavity. This difference in line-shape of the weak-localization peak is related to the differing distribution of areas enclosed by electron trajectories. In addition, periodic oscillations are observed which are probably associated with the Aharonov-Bohm effect through a periodic orbit within the cavities. △ Less

Submitted 26 May, 1994; originally announced May 1994.

Comments: 4 pages revtex + 4 figures on request; amc.hub.94.1