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Giant spin Hall conductivity in platinum at room temperature
Authors:
Chee Weng Koong,
Berthold-Georg Englert,
Christian Miniatura,
N. Chandrasekhar
Abstract:
We have demonstrated the electrical generation and detection of spin polarization by the spin Hall effect (SHE) in platinum. The experiment was performed in a non-local geometry without the use of ferromagnetic materials or magnetic field. We designed a circuit that uses the SHE to convert a charge current to a spin current, and the inverse SHE to convert the spin current back into a charge signal…
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We have demonstrated the electrical generation and detection of spin polarization by the spin Hall effect (SHE) in platinum. The experiment was performed in a non-local geometry without the use of ferromagnetic materials or magnetic field. We designed a circuit that uses the SHE to convert a charge current to a spin current, and the inverse SHE to convert the spin current back into a charge signal. The experiments were carried out for temperatures from 10 K up to 290 K. We extracted the spin Hall conductivity and spin diffusion length from the data with the aid of a spin diffusion model, and found the values of 1.1 $\times 10^6$ $Ω^{-1}$m$^{-1}$ and 80~nm, respectively, at 290 K. The spin Hall conductivity is two orders of magnitudes larger than the previous record of $3.3\times10^4$ $Ω^{-1}$m$^{-1}$. This observation may have many potential applications in spintronics devices.
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Submitted 9 June, 2010; v1 submitted 8 April, 2010;
originally announced April 2010.
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Temperature-dependent transition from injection-limited to space-charge-limited current in metal-organic diodes
Authors:
Yi Zheng,
Andrew T. S. Wee,
Cedric Troadec,
N. Chandrasekhar
Abstract:
Based on the assumption that the contact barrier height determines the current flow in organic semiconductor-based electronic devices, charge injection at metal-organic (MO) interfaces has been extensively investigated, while space-charge conduction in organic bulk is generally overlooked. Recent theoretical modeling and simulation have pointed out that such a simplification is questionable due…
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Based on the assumption that the contact barrier height determines the current flow in organic semiconductor-based electronic devices, charge injection at metal-organic (MO) interfaces has been extensively investigated, while space-charge conduction in organic bulk is generally overlooked. Recent theoretical modeling and simulation have pointed out that such a simplification is questionable due to the hop** nature of charge injection and hop**-related space-charge conduction. Here we show experimentally that charge transport in metal-organic diodes is complex interplay between injection-limited current (ILC) and space-charge-limited current (SCLC). We report the experimental observation of ILC-to-SCLC transition in Ag/pentacene/Ag diodes as a function of temperature.
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Submitted 22 September, 2009;
originally announced September 2009.
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Spin orbit interaction induced spin-separation in platinum nanostructures
Authors:
Koong Chee Weng,
N. Chandrasekhar,
Christian Miniatura,
Berthold-Georg Englert
Abstract:
Hirsch (1999) proposed a mechanism and geometry for the observation of the spin-Hall effect. In this work, we present a novel realization of the Hirsch geometry in a platinum (Pt) nanostructure, which is an increasingly important material for spintronics applications. Measurements were made in a non-local geometry to avoid spurious effects. The measurements show the large spin Hall conductivity…
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Hirsch (1999) proposed a mechanism and geometry for the observation of the spin-Hall effect. In this work, we present a novel realization of the Hirsch geometry in a platinum (Pt) nanostructure, which is an increasingly important material for spintronics applications. Measurements were made in a non-local geometry to avoid spurious effects. The measurements show the large spin Hall conductivity of Pt. The results are compared with gold (Au) and aluminum (Al). Possible theoretical explanations of our observations are briefly mentioned.
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Submitted 1 April, 2008;
originally announced April 2008.
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Metal Organic interfaces at the nanoscale
Authors:
Cedric Troadec,
Deng Jie,
Linda Kunardi,
Sean J O'Shea
Abstract:
In this work, we present an investigation of the Ag-PPP (polyparaphenylene) interface using ballistic electron emission microscopy. Our work is the first successful application of the BEEM technique to metal-organic interfaces. We observe nanometer scale injection inhomogeneities. They have an electronic origin, since we find corresponding Schottky barrier variations. We also determine the trans…
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In this work, we present an investigation of the Ag-PPP (polyparaphenylene) interface using ballistic electron emission microscopy. Our work is the first successful application of the BEEM technique to metal-organic interfaces. We observe nanometer scale injection inhomogeneities. They have an electronic origin, since we find corresponding Schottky barrier variations. We also determine the transmission function of Ag-PPP interface and find that it agrees qualitatively with the theoretical calculations for a metal-phenyl ring interface. We conclude that charge transport across inhomogeneous barriers needs to be considered for understanding electronic transport across metal-organic interfaces and organic device characteristics.
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Submitted 4 January, 2005;
originally announced January 2005.
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Ballistic emission spectroscopy and imaging of a buried metal-organic interface
Authors:
Cedric Troadec,
Linda Kunardi,
N. Chandrasekhar
Abstract:
The silver-p-phenylene (Ag-PPP) interface is investigated using ballistic electron emission microscopy (BEEM). Multiple injection barriers and spatial nonuniformity of carrier injection over nanometer length scales are observed. No unique injection barrier is found. Physical reasons for these features are discussed. BEEM current images and the surface topography of the silver film are uncorrelat…
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The silver-p-phenylene (Ag-PPP) interface is investigated using ballistic electron emission microscopy (BEEM). Multiple injection barriers and spatial nonuniformity of carrier injection over nanometer length scales are observed. No unique injection barrier is found. Physical reasons for these features are discussed. BEEM current images and the surface topography of the silver film are uncorrelated.
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Submitted 4 January, 2005;
originally announced January 2005.
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Insulator superconductor transition on solid inert gas substrates
Authors:
K. Das Gupta,
Swati S. Soman,
G. Sambandamurthy,
N. Chandrasekhar
Abstract:
We present observations of the insulator-superconductor transition in ultrathin films of Bi on solid xenon condensed on quartz and on Ge on quartz. The relative permeability $ε_{r}$ ranges from 1.5 for Xe to 15 for Ge. Though we find screening effects as expected, the I-S transition is robust, and unmodified by the substrate. The resistance separatrix is found to be close to $h/4e^2$ and the cro…
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We present observations of the insulator-superconductor transition in ultrathin films of Bi on solid xenon condensed on quartz and on Ge on quartz. The relative permeability $ε_{r}$ ranges from 1.5 for Xe to 15 for Ge. Though we find screening effects as expected, the I-S transition is robust, and unmodified by the substrate. The resistance separatrix is found to be close to $h/4e^2$ and the crossover thickness close to 25 $Å$ for all substrates. I-V studies and Aslamazov-Larkin analyses indicate superconductivity is inhomogeneous. The transition is best described in terms of a percolation model.
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Submitted 2 September, 2002;
originally announced September 2002.
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Vortices and the mixed state of ultrathin Bi films
Authors:
G. Sambandamurthy,
K. Das Gupta,
Swati S. Soman,
N. Chandrasekhar
Abstract:
Current-voltage (I-V) characteristics of quench condensed, superconducting, ultrathin Bi films in a magnetic field are reported. These show hysteresis for all films, grown both with and without thin Ge underlayers. Films on Ge underlayers, close to superconductor-insulator transition, show a peak in the critical current, indicating a structural transformation of the vortex solid. These underlaye…
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Current-voltage (I-V) characteristics of quench condensed, superconducting, ultrathin Bi films in a magnetic field are reported. These show hysteresis for all films, grown both with and without thin Ge underlayers. Films on Ge underlayers, close to superconductor-insulator transition, show a peak in the critical current, indicating a structural transformation of the vortex solid. These underlayers, used to make the films more homogeneous, are found to be more effective in pinning the vortices. The upper critical fields ($B_{c2}$) of these films are determined from the resistive transitions in perpendicular magnetic field. The temperature dependence of the upper critical field is found to differ significantly from Ginzburg-Landau theory, after modifications for disorder.
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Submitted 2 September, 2002;
originally announced September 2002.
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Critical currents and vortex-unbinding transitions in quench-condensed ultrathin films of Bismuth and Tin
Authors:
K. Das Gupta,
Swati S. Soman,
G. Sambandamurthy,
N. Chandrasekhar
Abstract:
We have investigated the I-V characteristics of strongly disordered ultra-thin films of {\it Bi} and {\it Sn} produced by quench-condensation. Our results show that both these sytems can be visualized as strongly disordered arrays of Josephson junctions. The experimentally observed I-V characteristics of these films is hysteretic, when the injected current is ramped from zero to critical current…
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We have investigated the I-V characteristics of strongly disordered ultra-thin films of {\it Bi} and {\it Sn} produced by quench-condensation. Our results show that both these sytems can be visualized as strongly disordered arrays of Josephson junctions. The experimentally observed I-V characteristics of these films is hysteretic, when the injected current is ramped from zero to critical current and back. These are remarkably similar to the hysteretic I-V of an underdamped single junction. We show by computer simulations that hysteresis can persist in a very strongly disordered array. It is also possible to estimate the individual junction parameters ($R$, $C$ and $I_c$) from the experimental I-Vs of the film using this model. The films studied are in a regime where the Josephson-coupling energy is larger than the charging energy. We find that a simple relation $I_c(T)=I_c(0)(1-(T/T_c)^4)$ describes the temperature dependence of the critical current quite accurately for films with sheet resistance $\sim$ 500$Ω$ or lower. We also find evidence of a vortex-unbindi
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Submitted 2 September, 2002;
originally announced September 2002.
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Effect of granularity on the insulator-superconductor transition in ultrathin Bi films
Authors:
G. Sambandamurthy,
K. Das Gupta,
N. Chandrasekhar
Abstract:
We have studied the insulator-superconductor transition (IST) by tuning the thickness in quench-condensed $Bi$ films. The resistive transitions of the superconducting films are smooth and can be considered to represent "homogeneous" films. The observation of an IST very close to the quantum resistance for pairs, $R_{\Box}^N \sim h/4e^2$ on several substrates supports this idea. The relevant leng…
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We have studied the insulator-superconductor transition (IST) by tuning the thickness in quench-condensed $Bi$ films. The resistive transitions of the superconducting films are smooth and can be considered to represent "homogeneous" films. The observation of an IST very close to the quantum resistance for pairs, $R_{\Box}^N \sim h/4e^2$ on several substrates supports this idea. The relevant length scales here are the localization length, and the coherence length. However, at the transition, the localization length is much higher than the superconducting coherence length, contrary to expectation for a "homogeneous" transition. This suggests the invalidity of a purely fermionic model for the transition. Furthermore, the current-voltage characteristics of the superconducting films are hysteretic, and show the films to be granular. The relevant energy scales here are the Josephson coupling energy and the charging energy. However, Josephson coupling energies ($E_J$) and the charging energies ($E_c$) at the IST, they are found to obey the relation $E_J < E_c$. This is again contrary to expectation, for the IST in a granular or inhomogeneous, system. Hence, a purely bosonic picture of the transition is also inconsistent with our observations. We conclude that the IST observed in our experiments may be either an intermediate case between the fermioinc and bosonic mechanisms, or in a regime of charge and vortex dynamics for which a quantitative analysis has not yet been done.
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Submitted 31 March, 2001;
originally announced April 2001.
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Vortex dynamics and upper critical fields in ultrathin Bi films
Authors:
G. Sambandamurthy,
K. Das Gupta,
N. Chandrasekhar
Abstract:
Current-voltage (I-V) characteristics of quench condensed, superconducting, ultrathin $Bi$ films in a magnetic field are reported. These I-V's show hysteresis for all films, grown both with and without thin $Ge$ underlayers. Films on Ge underlayers, close to superconductor-insulator transition (SIT), show a peak in the critical current, indicating a structural transformation of the vortex solid…
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Current-voltage (I-V) characteristics of quench condensed, superconducting, ultrathin $Bi$ films in a magnetic field are reported. These I-V's show hysteresis for all films, grown both with and without thin $Ge$ underlayers. Films on Ge underlayers, close to superconductor-insulator transition (SIT), show a peak in the critical current, indicating a structural transformation of the vortex solid (VS). These underlayers, used to make the films more homogeneous, are found to be more effective in pinning the vortices. The upper critical fields (B$_{c2}$) of these films are determined from the resistive transitions in perpendicular magnetic field. The temperature dependence of the upper critical field is found to differ significantly from Ginzburg-Landau theory, after modifications for disorder.
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Submitted 18 April, 2001; v1 submitted 12 March, 2001;
originally announced March 2001.
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Possible robust insulator-superconductor transition on solid inert gas and other substrates
Authors:
K. Das Gupta,
G. Sambandamurthy,
Swati S. Soman,
N. Chandrasekhar
Abstract:
We present observations of the insulator-superconductor transition in ultrathin films of Bi on amorphous quartz, quartz coated with Ge, and for the first time, solid xenon condensed on quartz. The relative permeability $ε_r$ ranges from 1.5 for Xe to 15 for Ge. Though we find screening effects as expected, the I-S transition is robust, and unmodified by the substrate. The resistance separatrix i…
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We present observations of the insulator-superconductor transition in ultrathin films of Bi on amorphous quartz, quartz coated with Ge, and for the first time, solid xenon condensed on quartz. The relative permeability $ε_r$ ranges from 1.5 for Xe to 15 for Ge. Though we find screening effects as expected, the I-S transition is robust, and unmodified by the substrate. The resistance separatrix is found to be close to h/4e^2 and the crossover thickness close to $\rm 25 Å$ for all substrates. I-V studies and Aslamazov-Larkin analyses indicate superconductivity is inhomogeneous. The transition can be understood in terms of a percolation model.
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Submitted 10 November, 2000;
originally announced November 2000.
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Josephson junction array type I-V characteristics of quench-condensed ultra thin films of Bi
Authors:
G. Sambandamurthy,
K. DasGupta,
V. H. S. Moorthy,
N. Chandrasekhar
Abstract:
In this communication we report studies of d.c current-voltage (I-V) characteristics of ultra thin films of Bi, quench condensed on single crystal sapphire substrates at T = 15K. The hysteretic I-V characteristics are explained using a resistively and capacitively shunted junction (RCSJ) model of Josephson junction arrays. The Josephson coupling energy($E_J$) and the charging energy($E_c$) are c…
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In this communication we report studies of d.c current-voltage (I-V) characteristics of ultra thin films of Bi, quench condensed on single crystal sapphire substrates at T = 15K. The hysteretic I-V characteristics are explained using a resistively and capacitively shunted junction (RCSJ) model of Josephson junction arrays. The Josephson coupling energy($E_J$) and the charging energy($E_c$) are calculated for different thickness($d$) values. A low resistance state is found in the low current regime below the critical current, $I_c$. This resistance $R_0$ is found to have a minimum at a particular thickness ($d_c$) value. Reflection High Energy Electron Diffraction (RHEED) studies are done on these films. A distinct appearance of a diffuse ring near $d_c$ is observed in the diffraction images, consistent with the recent STM studies(Ekinci and Valles, PRL {\bf 82}(1999) 1518). These films show an irreversible annealing when temperature is increased. The annealing temperature ($T_a$) also has a maximum at the same thickness. Althoguh the R$_s$ vs T of quench condensed Bi films suggest that the films are uniform, our results indicate that even in thick films, the order parameter is not fully developed over the complete area of the film. These results are discussed qualitatively.
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Submitted 13 July, 2000;
originally announced July 2000.
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Magnetoresistance and conductivity exponents of quench-condensed ultra-thin films of Bi
Authors:
K. Das Gupta,
G. Sambandamurthy,
V. H. S. Moorthy,
N. Chandrasekhar
Abstract:
We have studied the magnetoresistance (MR) and evolution of conductivity with thickness of quench-condensed Bismuth films on substrates of various dielectric constants. Our results indicate a negative intial MR proportional to the square of the magnetic field. The conductance shows a power-law kind of dependence on thickness, with an exponent close to 1.33, characterisitic of a 2-D percolating s…
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We have studied the magnetoresistance (MR) and evolution of conductivity with thickness of quench-condensed Bismuth films on substrates of various dielectric constants. Our results indicate a negative intial MR proportional to the square of the magnetic field. The conductance shows a power-law kind of dependence on thickness, with an exponent close to 1.33, characterisitic of a 2-D percolating system, only when the films are grown on a thin ($\sim 10${\rm Å} Germanium underlayer but not otherwise.
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Submitted 2 October, 1999;
originally announced October 1999.
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Onset of superconductivity in 2D granular films composed of Bi clusters
Authors:
N. Chandrasekhar
Abstract:
Two dimensional films comprising of Bi clusters ranging in size from 25 to 100 $\mathrmÅ$ show an influence of the underlying matrix on normal state resistivity and the superconducting transition temperature $T_\mathrm{c}$. This is in contrast to crystalline Bi. Quantum size effects are observed by changing the deposition temperature, which determines cluster size. These observations can be attr…
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Two dimensional films comprising of Bi clusters ranging in size from 25 to 100 $\mathrmÅ$ show an influence of the underlying matrix on normal state resistivity and the superconducting transition temperature $T_\mathrm{c}$. This is in contrast to crystalline Bi. Quantum size effects are observed by changing the deposition temperature, which determines cluster size. These observations can be attributed to superconductivity at the surface. Implications for the requirement of a critical number of superconducting clusters before the establishment of global phase coherence are briefly discussed.
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Submitted 26 September, 1999;
originally announced September 1999.
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Electrical transport properties of ultrathin disordered films
Authors:
G. Sambandamurthy,
K. DasGupta,
N. Chandrasekhar
Abstract:
We report an experimental study of quench condensed ($2K\le T \le 15K$) disordered ultrathin films of {\rm Bi} where localisation effects and superconductivity compete. Experiments are done with different substrates and/or different underlayers. Quasi-free standing films of {\rm Bi}, prepared by quenching {\rm Bi} vapours onto solid {\rm Xe}, are also studied. The results show a dependence of th…
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We report an experimental study of quench condensed ($2K\le T \le 15K$) disordered ultrathin films of {\rm Bi} where localisation effects and superconductivity compete. Experiments are done with different substrates and/or different underlayers. Quasi-free standing films of {\rm Bi}, prepared by quenching {\rm Bi} vapours onto solid {\rm Xe}, are also studied. The results show a dependence of the transport properties both on the dielectric constant of the substrate/underlayer as well as the temperature of quench condensation. RHEED studies indicate that quantum size effects are important in these systems. In this paper, we try to correlate the structure of the films to the transport properties obtained.
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Submitted 26 September, 1999;
originally announced September 1999.
