Showing 1–16 of 16 results for author: Chanana, A

Strong interactions between integrated microresonators and alkali atomic vapors: towards single-atom, single-photon operation

Authors: Roy Zektzer, Xiyuan Lu, Khoi Tuan Hoang, Rahul Shrestha, Sharoon Austin, Feng Zhou, Ashish Chanana, Glenn Holland, Daron Westly, Paul Lett, Alexey V. Gorshkov, Kartik Srinivasan

Abstract: Cavity quantum electrodynamics (cQED), the interaction of a two-level system with a high quality factor (Q) cavity, is a foundational building block in different architectures for quantum computation, communication, and metrology. The strong interaction between the atom and the cavity enables single photon operation which is required for quantum gates and sources. Cold atoms, quantum dots, and col… ▽ More Cavity quantum electrodynamics (cQED), the interaction of a two-level system with a high quality factor (Q) cavity, is a foundational building block in different architectures for quantum computation, communication, and metrology. The strong interaction between the atom and the cavity enables single photon operation which is required for quantum gates and sources. Cold atoms, quantum dots, and color centers in crystals are amongst the systems that have shown single photon operations, but they require significant physical infrastructure. Atomic vapors, on the other hand, require limited experimental infrastructure and are hence much easier to deploy outside a laboratory, but they produce an ensemble of moving atoms that results in short interaction times involving multiple atoms, which can hamper quantum operations. A solution to this issue can be found in nanophotonic cavities, where light-matter interaction is enhanced and the volume of operation is small, so that fast single-atom, single-photon operations are enabled. In this work, we study the interaction of an atomically-clad microring resonator (ACMRR) with different-sized ensembles of Rb atoms. We demonstrate strong coupling between an ensemble of ~50 atoms interacting with a high-quality factor (Q > 4 x 10^5) ACMRR, yielding a many-atom cooperativity C ~ 5.5. We continue to observe signatures of atom-photon interaction for a few (< 3) atoms, for which we observe saturation at the level of one intracavity photon. Further development of our platform, which includes integrated thermo-optic heaters to enable cavity tuning and stabilization, should enable the observation of interactions between single photons and single atoms. △ Less

Submitted 5 April, 2024; originally announced April 2024.

Band flip** and bandgap closing in a photonic crystal ring and its applications

Authors: Xiyuan Lu, Ashish Chanana, Yi Sun, Andrew McClung, Marcelo Davanco, Kartik Srinivasan

Abstract: The size of the bandgap in a photonic crystal ring is typically intuitively considered to monotonically grow as the modulation amplitude of the grating increases, causing increasingly large frequency splittings between the 'dielectric' and 'air' bands. In contrast, here we report that as the modulation amplitude in a photonic crystal ring increases, the bandgap does not simply increase monotonical… ▽ More The size of the bandgap in a photonic crystal ring is typically intuitively considered to monotonically grow as the modulation amplitude of the grating increases, causing increasingly large frequency splittings between the 'dielectric' and 'air' bands. In contrast, here we report that as the modulation amplitude in a photonic crystal ring increases, the bandgap does not simply increase monotonically. Instead, after the initial increase, the bandgap closes and then reopens again with the dielectric band and the air bands flipped in energy. The air and dielectric band edges are degenerate at the bandgap closing point. We demonstrate this behavior experimentally in silicon nitride photonic crystal microrings, where we show that the bandgap is closed to within the linewidth of the optical cavity mode, whose quality factor remains unperturbed with a value $\approx$ 1$\times$10$^6$ (i.e., linewidth of 2 pm). Moreover, through finite-element simulations, we show that such bandgap closing and band flip** phenomena exist in a variety of photonic crystal rings with varying units cell geometries and cladding layers. At the bandgap closing point, the two standing wave modes with a degenerate frequency are particularly promising for single-frequency lasing applications. Along this line, we propose a compact self-injection locking scheme that integrates many core functionalities in one photonic crystal ring. Additionally, the single-frequency lasing might be applicable to DFB lasers to increase their manufacturing yield. △ Less

Submitted 11 November, 2023; originally announced November 2023.

Comments: 7 pages, 4 figures

Multi-mode microcavity frequency engineering through a shifted grating in a photonic crystal ring

Authors: Xiyuan Lu, Yi Sun, Ashish Chanana, Usman A. Javid, Marcelo Davanco, Kartik Srinivasan

Abstract: Frequency engineering of whispering-gallery resonances is essential in microcavity nonlinear optics. The key is to control the frequencies of the cavity modes involved in the underlying nonlinear optical process to satisfy its energy conservation criterion. Compared to the conventional method that tailors dispersion by the cross-sectional geometry, thereby impacting all cavity mode frequencies, gr… ▽ More Frequency engineering of whispering-gallery resonances is essential in microcavity nonlinear optics. The key is to control the frequencies of the cavity modes involved in the underlying nonlinear optical process to satisfy its energy conservation criterion. Compared to the conventional method that tailors dispersion by the cross-sectional geometry, thereby impacting all cavity mode frequencies, grating-assisted microring cavities, often termed as photonic crystal microrings, provide more enabling capabilities through mode-selective frequency control. For example, a simple single period grating added to a microring has been used for single-frequency engineering in Kerr optical parametric oscillation (OPO) and frequency combs. Recently, this approach has been extended to multi-frequency engineering by using multi-period grating functions, but at the cost of increasingly complex grating profiles that require challenging fabrication. Here, we demonstrate a simple approach, which we term as shifted grating multiple mode splitting (SGMMS), where spatial displacement of a single period grating imprinted on the inner boundary of the microring creates a rotational asymmetry that frequency splits multiple adjacent cavity modes. This approach is easy to implement and presents no additional fabrication challenges than an un-shifted grating, and yet is very powerful in providing multi-frequency engineering functionality for nonlinear optics. We showcase an example where SGMMS enables OPO generation across a wide range of pump wavelengths in a normal-dispersion device that otherwise would not support OPO. △ Less

Submitted 7 November, 2023; originally announced November 2023.

Journal ref: Photonics Research 11, A72-A79 (2023)

Rod and slit photonic crystal microrings for on-chip cavity quantum electrodynamics

Authors: Xiyuan Lu, Feng Zhou, Yi Sun, Mingkang Wang, Qingyang Yan, Ashish Chanana, Andrew McClung, Vladimir A Aksyuk, Marcelo Davanco, Kartik Srinivasan

Abstract: Micro-/nanocavities that combine high quality factor ($Q$) and small mode volume ($V$) have been used to enhance light-matter interactions for cavity quantum electrodynamics (cQED). Whispering gallery mode (WGM) geometries such as microdisks and microrings support high-$Q$ and are design- and fabrication-friendly, but $V$ is often limited to tens of cubic wavelengths to avoid WGM radiation. The st… ▽ More Micro-/nanocavities that combine high quality factor ($Q$) and small mode volume ($V$) have been used to enhance light-matter interactions for cavity quantum electrodynamics (cQED). Whispering gallery mode (WGM) geometries such as microdisks and microrings support high-$Q$ and are design- and fabrication-friendly, but $V$ is often limited to tens of cubic wavelengths to avoid WGM radiation. The stronger modal confinement provided by either one-dimensional or two-dimensional photonic crystal defect geometries can yield sub-cubic-wavelength $V$, yet the requirements on precise design and dimensional control are typically much more stringent to ensure high-$Q$. Given their complementary features, there has been sustained interest in geometries that combine the advantages of WGM and photonic crystal cavities. Recently, a `microgear' photonic crystal ring (MPhCR) has shown promise in enabling additional defect localization ($>$ 10$\times$ reduction of $V$) of a WGM, while maintaining high-$Q$ ($\approx10^6$) and other WGM characteristics in ease of coupling and design. However, the unit cell geometry used is unlike traditional PhC cavities, and etched surfaces may be too close to embedded quantum nodes (quantum dots, atomic defect spins, etc.) for cQED applications. Here, we report two novel PhCR designs with `rod' and `slit' unit cells, whose geometries are more traditional and suitable for solid-state cQED. Both rod and slit PhCRs have high-$Q$ ($>10^6$) with WGM coupling properties preserved. A further $\approx$~10$\times$ reduction of $V$ by defect localization is observed in rod PhCRs. Moreover, both fundamental and 2nd-order PhC modes co-exist in slit PhCRs with high $Q$s and good coupling. Our work showcases that high-$Q/V$ PhCRs are in general straightforward to design and fabricate and are a promising platform to explore for cQED. △ Less

Submitted 28 October, 2022; originally announced October 2022.

Comments: 7 pages, 4 figures

Kerr optical parametric oscillation in a photonic crystal microring for accessing the infrared

Authors: Xiyuan Lu, Ashish Chanana, Feng Zhou, Marcelo Davanco, Kartik Srinivasan

Abstract: Continuous wave optical parametric oscillation (OPO) provides a flexible approach for accessing mid-infrared wavelengths between 2 $μ$m to 5 $μ$m, but has not yet been integrated into silicon nanophotonics. Typically, Kerr OPO uses a single transverse mode family for pump, signal, and idler modes, and relies on a delicate balance to achieve normal (but close-to-zero) dispersion near the pump and t… ▽ More Continuous wave optical parametric oscillation (OPO) provides a flexible approach for accessing mid-infrared wavelengths between 2 $μ$m to 5 $μ$m, but has not yet been integrated into silicon nanophotonics. Typically, Kerr OPO uses a single transverse mode family for pump, signal, and idler modes, and relies on a delicate balance to achieve normal (but close-to-zero) dispersion near the pump and the requisite higher-order dispersion needed for phase- and frequency-matching. Within integrated photonics platforms, this approach results in two major problems. First, the dispersion is very sensitive to geometry, so that small fabrication errors can have a large impact. Second, the device is susceptible to competing nonlinear processes near the pump. In this letter, we propose a flexible solution to infrared OPO that addresses these two problems, by using a silicon nitride photonic crystal microring (PhCR). The frequency shifts created by the PhCR bandgap enable OPO that would otherwise be forbidden. We report an intrinsic optical quality factor up to (1.2 $\pm$ 0.1)$\times$10$^6$ in the 2 $μ$m band, and use a PhCR ring to demonstrate an OPO with threshold power of (90 $\pm$ 20) mW dropped into the cavity, with the pump wavelength at 1998~nm, and the signal and idler wavelengths at 1937 nm and 2063 nm, respectively. We further discuss how to extend OPO spectral coverage in the mid-infrared. These results establish the PhCR OPO as a promising route for integrated laser sources in the infrared. △ Less

Submitted 27 July, 2022; originally announced July 2022.

Comments: 4 pages, 3 figures

Journal ref: Optics Letters 47, 3331-3334 (2022)

Triggered single-photon generation and resonance fluorescence in ultra-low loss integrated photonic circuits

Authors: Ashish Chanana, Hugo Larocque, Renan Moreira, Jacques Carolan, Biswarup Guha, Vikas Anant, ** Dong Song, Dirk Englund, Daniel J. Blumenthal, Kartik Srinivasan, Marcelo Davanco

Abstract: A central requirement for photonic quantum information processing systems lies in the combination of nonclassical light sources and low-loss, phase-stable optical modes. While substantial progress has been made separately towards ultra-low loss, $\leq1$ dB/m, chip-scale photonic circuits and high brightness single-photon sources, integration of these technologies has remained elusive. Here, we rep… ▽ More A central requirement for photonic quantum information processing systems lies in the combination of nonclassical light sources and low-loss, phase-stable optical modes. While substantial progress has been made separately towards ultra-low loss, $\leq1$ dB/m, chip-scale photonic circuits and high brightness single-photon sources, integration of these technologies has remained elusive. Here, we report a significant advance towards this goal, in the hybrid integration of a quantum emitter single-photon source with a wafer-scale, ultra-low loss silicon nitride photonic integrated circuit. We demonstrate triggered and pure single-photon emission directly into a Si$_3$N$_4$ photonic circuit with $\approx1$ dB/m propagation loss at a wavelength of $\approx920$ nm. These losses are more than two orders of magnitude lower than reported to date for any photonic circuit with on-chip quantum emitter sources, and $>50$ % lower than for any prior foundry-compatible integrated quantum photonic circuit, to the best of our knowledge. Using these circuits we report the observation of resonance fluorescence in the strong drive regime, a milestone towards integrated coherent control of quantum emitters. These results constitute an important step forward towards the creation of scaled chip-integrated photonic quantum information systems. △ Less

Submitted 9 February, 2022; originally announced February 2022.

Traceable localization enables accurate integration of quantum emitters and photonic structures with high yield

Authors: Craig R. Copeland, Adam L. Pintar, Ronald G. Dixson, Ashish Chanana, Kartik Srinivasan, Daron A. Westly, B. Robert Ilic, Marcelo I. Davanco, Samuel M. Stavis

Abstract: Traceability to the International System of Units (SI) is fundamental to measurement accuracy and reliability. In this study, we demonstrate subnanometer traceability of localization microscopy, establishing a metrological foundation for the maturation and application of super-resolution methods. To do so, we create a master standard by measuring the positions of submicrometer apertures in an arra… ▽ More Traceability to the International System of Units (SI) is fundamental to measurement accuracy and reliability. In this study, we demonstrate subnanometer traceability of localization microscopy, establishing a metrological foundation for the maturation and application of super-resolution methods. To do so, we create a master standard by measuring the positions of submicrometer apertures in an array by traceable atomic-force microscopy. We perform correlative measurements of this master standard by optical microscopy, calibrating scale factor and correcting aberration effects. We introduce the concept of a localization uncertainty field due to optical localization errors and scale factor uncertainty, with regions of position traceability to within a 68 % coverage interval of +/- 1 nm. These results enable localization metrology with high throughput, which we apply to measure working standards that we fabricate by electron-beam lithography, validating the accuracy of mean pitch and closing the loop for disseminating and integrating reference arrays. We then apply our novel methods to calibrate an optical microscope with a sample cryostat, accounting for thermal contraction by use of a submicrometer pillar array in silicon as a reference material and elucidating complex distortion. This new calibration enables the accurate integration of quantum emitters and photonic structures with high yield, as we demonstrate theoretically through simulations of the dependence of the Purcell factor of radiative enhancement on registration errors across a wide field. Our study illuminates the challenges and opportunities of achieving traceable localization for comparison of position data across lithography and microscopy systems, from ambient to cryogenic temperatures. △ Less

Submitted 28 February, 2023; v1 submitted 18 June, 2021; originally announced June 2021.

The anisotropic quasi-static permittivity of single-crystal beta-Ga2O3

Authors: Prashanth Gopalan, Sean Knight, Ashish Chanana, Megan Stokey, Praneeth Ranga, Michael A. Scarpulla, Sriram Krishnamoorthy, V. Darakchieva, Zbigniew Galazka, Klaus Irmscher, Andreas Fiedler, Steve Blair, Mathias Schubert, Berardi Sensale-Rodriguez

Abstract: The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequency domain spectroscopy in the spectral range from 200 GHz to 1 THz was carried out on bulk crystals along different orientations. Principal directions for permittivity were determined along crystallographic axes c, and b,… ▽ More The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequency domain spectroscopy in the spectral range from 200 GHz to 1 THz was carried out on bulk crystals along different orientations. Principal directions for permittivity were determined along crystallographic axes c, and b, and reciprocal lattice direction a*. No significant frequency dispersion in the real part of dielectric permittivity was observed in the measured spectral range. Our results are in excellent agreement with recent radio-frequency capacitance measurements as well as with extrapolations from recent infrared measurements of phonon mode and high frequency contributions, and close the knowledge gap for these parameters in the terahertz spectral range. Our results are important for applications of beta-Ga2O3 in high-frequency electronic devices △ Less

Submitted 6 October, 2020; originally announced October 2020.

Comments: Main Manuscript is 6 pages long with 3 figures and 1 table. The submission also contains a Supplementary Info section

Prediction of Coupled Electronic and Phononic Ferroelectricity in Strained 2D h-NbN: First-principles Theoretical Analysis

Authors: Anuja Chanana, Umesh V. Waghmare

Abstract: Using first-principles density functional theoretical analysis, we predict coexisting ferroelectric and semi-metallic states in two-dimensional monolayer of h-NbN subjected to electric field and in-plane strain ($ε$). At strains close to $ε$=4.85%, where its out-of-plane spontaneous polarization changes sign without inverting the structure, we demonstrate a hysteretic response of its structure and… ▽ More Using first-principles density functional theoretical analysis, we predict coexisting ferroelectric and semi-metallic states in two-dimensional monolayer of h-NbN subjected to electric field and in-plane strain ($ε$). At strains close to $ε$=4.85%, where its out-of-plane spontaneous polarization changes sign without inverting the structure, we demonstrate a hysteretic response of its structure and polarization to electric field, and uncover a three-state (P=$\pm$P$_o$Po, 0) switching during which h-NbN passes through Dirac semi-metallic states. With first-principles evidence for a combination of electronic and phononic ferroelectricity, we present a simple model that captures the energetics of coupled electronic and structural polarization, and show that electronic ferroelectricity arises in a material which is highly polarizable (small bandgap) and exhibits a large electron-phonon coupling leading to anomalous dynamical charges. These insights will guide search for electronic ferroelectrics, and our results on 2D h-NbN will stimulate development of piezo-field effect transistors and devices based on the multi-level logic. △ Less

Submitted 30 April, 2019; originally announced April 2019.

Comments: Submitted in PRL, 16 pages, 18 figures

Journal ref: Phys. Rev. Lett. 123, 037601 (2019)

Manifestation of kinetic-inductance in spectrally-narrow terahertz plasmon resonances in thin-film Cd3As2

Authors: Ashish Chanana, Neda Loftizadeh, Hugo O. Condori Quispe, Prashanth Gopalan, Joshua R. Winger, Steve Blair, Ajay Nahata, Vikram Deshpande, Michael A. Scarpulla, Berardi Sensale-Rodriguez

Abstract: Three-dimensional (3D) semimetals have been predicted and demonstrated to have a wide variety of interesting properties associated with its linear energy dispersion. In analogy to two-dimensional (2D) Dirac semimetals, such as graphene, Cd3As2, a 3D semimetal, has shown ultra-high mobility, large Fermi velocity, and has been hypothesized to support plasmons at terahertz frequencies. In this work,… ▽ More Three-dimensional (3D) semimetals have been predicted and demonstrated to have a wide variety of interesting properties associated with its linear energy dispersion. In analogy to two-dimensional (2D) Dirac semimetals, such as graphene, Cd3As2, a 3D semimetal, has shown ultra-high mobility, large Fermi velocity, and has been hypothesized to support plasmons at terahertz frequencies. In this work, we demonstrate synthesis of high-quality large-area Cd3As2 thin-films through thermal evaporation as well as the experimental realization of plasmonic structures consisting of periodic arrays of Cd3As2 stripes. These arrays exhibit sharp resonances at terahertz frequencies with associated quality-factors (Q) as high as ~ 3.7. Such spectrally-narrow resonances can be understood on the basis of a large kinetic-inductance, resulting from a long momentum scattering time, which in our films can approach ~1 ps at room-temperature. Moreover, we demonstrate an ultrafast tunable response through excitation of photo-induced carriers in optical pump / terahertz probe experiments. Our results evidence that the intrinsic 3D nature of Cd3As2 provides for a very robust platform for terahertz plasmonic applications. Overall, our observations pave a way for the development of myriad terahertz (opto) electronic devices based on Cd3As2 and other 3D Dirac semimetals, benefiting from strong coupling of terahertz radiation, ultrafast transient response, magneto-plasmon properties, etc. Moreover, the long momentum scattering time, thus large kinetic inductance in Cd3As2, also holds enormous potential for the re-design of passive elements such as inductors and hence can have a profound impact in the field of RF integrated circuits. △ Less

Submitted 10 November, 2018; originally announced November 2018.

Comments: 32 pages, 8 figures

Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells

Authors: H. Condori Quispe, S. M. Islam, S. Bader, A. Chanana, K. Lee, R. Chaudhuri, A. Nahata, H. G. Xing, D. Jena, B. Sensale-Rodriguez

Abstract: We describe studies on the nanoscale transport dynamics of carriers in strained AlN/GaN/AlN quantum wells: an electron-hole bilayer charge system with large difference in transport properties between the two charge layers. From electronic band diagram analysis, the presence of spatially separated two-dimensional electron and hole charge layers is predicted at opposite interfaces. Since these charg… ▽ More We describe studies on the nanoscale transport dynamics of carriers in strained AlN/GaN/AlN quantum wells: an electron-hole bilayer charge system with large difference in transport properties between the two charge layers. From electronic band diagram analysis, the presence of spatially separated two-dimensional electron and hole charge layers is predicted at opposite interfaces. Since these charge layers exhibit distinct spectral signatures at terahertz frequencies, a combination of terahertz and far-infrared spectroscopy enables us to extract (a) individual contributions to the total conductivity, as well as (b) effective scattering rates for charge-carriers in each layer. Furthermore, by comparing direct-current and terahertz extracted conductivity levels, we are able to determine the extent to which structural defects affect charge transport. Our results evidence that (i) a non-unity Hall-factor and (ii) the considerable contribution of holes to the overall conductivity, lead to a lower apparent mobility in Hall-effect measurements. Overall, our work demonstrates that terahertz spectroscopy is a suitable technique for the study of bilayer charge systems with large differences in transport properties between layers, such as quantum wells in III-Nitride semiconductors. △ Less

Submitted 15 August, 2017; originally announced August 2017.

Comments: Applied Physics Letters

Journal ref: APL 111(7), 073102 (2017)

Density Functional Theory based Study of Chlorine Doped WS2-metal Interface

Authors: Anuja Chanana, Santanu Mahapatra

Abstract: Investigation of a TMD-metal interface is essential for the effective functioning of monolayer TMD based field effect transistors (FETs). In this work, we employ Density Functional Theory (DFT) calculations to analyze the modulation of the electronic structure of monolayer WS2 with chlorine do** and the relative changes in the contact properties when interfaced with gold and palladium. We initia… ▽ More Investigation of a TMD-metal interface is essential for the effective functioning of monolayer TMD based field effect transistors (FETs). In this work, we employ Density Functional Theory (DFT) calculations to analyze the modulation of the electronic structure of monolayer WS2 with chlorine do** and the relative changes in the contact properties when interfaced with gold and palladium. We initially examine the atomic and electronic structures of pure and doped monolayer WS2 supercell and explore the formation of mid gap states with band splitting near the conduction band edge. Further we analyze the contact nature of the pure supercell with Au and Pd. We find that while Au is physiosorped and forms n-type contact, Pd is chemisorped and forms p-type contact with a higher valence electron density. Next, we study the interface formed between the Cl-doped supercell and metals and observe a reduction in the Schottky barrier height (SBH) in comparison to the pure supercell. This reduction found is higher for Pd in comparison to Au which is further validated by examining the charge transfer occurring at the interface. Our study confirms that Cl do** is an efficient mechanism to reduce the n-SBH for both Au and Pd which form different types of contact with WS2. △ Less

Submitted 7 March, 2016; originally announced March 2016.

Comments: 5 pages 6 figures accepted in Applied Physics Letters

Prospects of Zero Schottky Barrier Height in a Graphene Inserted MoS2-Metal Interface

Authors: Anuja Chanana, Santanu Mahapatra

Abstract: A low Schottky barrier height (SBH) at source/drain contact is essential for achieving high drive current in atomic layer MoS2 channel based field-effect transistors. Approaches such as choosing metals with appropriate work functions and chemical do** are employed previously to improve the carrier injection from the contact electrodes to the channel and to mitigates the SBH between the MoS2 and… ▽ More A low Schottky barrier height (SBH) at source/drain contact is essential for achieving high drive current in atomic layer MoS2 channel based field-effect transistors. Approaches such as choosing metals with appropriate work functions and chemical do** are employed previously to improve the carrier injection from the contact electrodes to the channel and to mitigates the SBH between the MoS2 and metal. Recent experiments demonstrate significant SBH reduction when graphene layer is inserted between metal slab (Ti and Ni) and MoS2. However, the physical or chemical origin of this phenomenon is not yet clearly understood. In this work, density functional theory (DFT) simulations are performed, employing pseudopotentials with very high basis sets to get insights of the charge transfer between metal and monolayer MoS2 through the inserted graphene layer. Our atomistic simulations on 16 different interfaces involving five different metals (Ti, Ag, Ru, Au and Pt) reveal that: (i) such a decrease in SBH is not consistent among various metals, rather an increase in SBH is observed in case of Au and Pt (ii) unlike MoS2-metal interface, the projected dispersion of MoS2 remains preserved in any MoS2-graphene-metal system with shift in the bands on the energy axis. (iii) a proper choice of metal (e.g., Ru) may exhibit ohmic nature in a graphene inserted MoS2-metal contact. These understandings would provide a direction in develo** high performance transistors involving hetero atomic layers as contact electrodes. △ Less

Submitted 29 December, 2015; v1 submitted 11 December, 2015; originally announced December 2015.

Comments: 8 pages, 6 figures Accepted in Journal of Applied Physics

Analysis of Vacancy defects in Hybrid Graphene-Boron Nitride Armchair Nanoribbon based n-MOSFET at Ballistic Limit

Authors: Anuja Chanana, Amretashis Sengupta, Santanu Mahaptra

Abstract: Here, we report the performance of vacancy affected supercell of a hybrid Graphene-Boron Nitride embedded armchair nanoribbon (a-GNR-BN) based n-MOSFET at its ballistic transport limit using Non Equilibrium Green's Function (NEGF) methodology. A supercell is made of the 3p configuration of armchair nanoribbon that is doped on the either side with 6 BN atoms and is also H-passivated. The type of va… ▽ More Here, we report the performance of vacancy affected supercell of a hybrid Graphene-Boron Nitride embedded armchair nanoribbon (a-GNR-BN) based n-MOSFET at its ballistic transport limit using Non Equilibrium Green's Function (NEGF) methodology. A supercell is made of the 3p configuration of armchair nanoribbon that is doped on the either side with 6 BN atoms and is also H-passivated. The type of vacancies studied are mono (B removal), di (B and N atom removal) and hole (removal of 6 atoms) formed all at the interface of carbon and BN atoms. Density Functional Theory (DFT) is employed to evaluate the material properties of this supercell like bandgap, effective mass and density of states (DOS). Further band gap and effective mass are utilized in self-consistent PoissonSchrodinger calculator formalized using NEGF approach. For all the vacancy defects, material properties show a decrease which is more significant for hole defects. This observation is consistent in the device characteristics as well where ON-current (ION ) and Sub Threshold Slope (SS) shows the maximum increment for hole vacancy and increase is more significant becomes when the number of defects increase. △ Less

Submitted 4 December, 2015; originally announced December 2015.

Comments: in 18th International Workshop on Computational Electronics (2015)

First Principles Study of Metal Contacts to Monolayer Black Phosphorous

Authors: Anuja Chanana, Santanu Mahapatra

Abstract: Atomically thin layered black phosphorous (BP) has recently appeared as an alternative to the transitional metal di chalcogenides for future channel material in a MOS transistor due to its lower carrier effective mass. Investigation of the electronic property of source/drain contact involving metal and two-dimensional material is essential as it impacts the transistor performance. In this paper we… ▽ More Atomically thin layered black phosphorous (BP) has recently appeared as an alternative to the transitional metal di chalcogenides for future channel material in a MOS transistor due to its lower carrier effective mass. Investigation of the electronic property of source/drain contact involving metal and two-dimensional material is essential as it impacts the transistor performance. In this paper we perform a systematic and rigorous study to evaluate the Ohmic nature of the side-contact formed by the monolayer BP (mBP) and metals (gold, titanium and palladium), which are commonly used in experiments. Employing the Density Functional Theory (DFT), we analyse the potential barrier, charge transfer and atomic orbital overlap at the metal-mBP interface in an optimized structure to understand how efficiently carriers could be injected from metal contact to the mBP channel. Our analysis shows that gold forms a Schottky contact with a higher tunnel barrier at the interface in comparison to the titanium and palladium. mBP contact with palladium is found to be purely Ohmic, where as titanium contact demonstrates an intermediate behaviour. △ Less

Submitted 21 November, 2014; originally announced November 2014.

Comments: 10 Pages 13 Figures Accepted in Journal Of Applied Physics

Performance Analysis of Boron Nitride Embedded Armchair Graphene Nanoribbon MOSFET with Stone Wales Defects

Authors: Anuja Chanana, Amretashis Sengupta, Santanu Mahapatra

Abstract: We study the performance of a hybrid Graphene-Boron Nitride {GNR-BN} armchair nanoribbon {a-GNR-BN} MOSFET at its ballistic transport limit. We consider three geometric configurations 3p, 3p+1 and 3p+2 of a-GNR-BN with BN atoms embedded on both sides {2, 4 and 6 BN on each side} on the GNR. The material properties like band gap, effective mass and density of states of these H-passivated structures… ▽ More We study the performance of a hybrid Graphene-Boron Nitride {GNR-BN} armchair nanoribbon {a-GNR-BN} MOSFET at its ballistic transport limit. We consider three geometric configurations 3p, 3p+1 and 3p+2 of a-GNR-BN with BN atoms embedded on both sides {2, 4 and 6 BN on each side} on the GNR. The material properties like band gap, effective mass and density of states of these H-passivated structures have been evaluated using the Density Functional Theory {DFT}. Using these material parameters, self-consistent Poisson-Schrodinger simulations are carried out under the Non Equilibrium Greens Function {NEGF} formalism to calculate the ballistic MOSFET device characteristics. For a hybrid nanoribbon of width ~ 5 nm, the simulated ON current is found to be in the range 276 uA - 291 uA with an ON/OFF ratio 7.1 x 10^6 - 7.4 x 10^6 for a VDD = 0.68 V corresponds to 10 nm technology node. We further study the impact of randomly distributed Stone Wales {SW} defects in these hybrid structures and only 2.52% degradation of ON current is observed for SW defect density of 6.35%. △ Less

Submitted 24 September, 2013; originally announced September 2013.