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Small Correlated Against Large Estimator (SCALE) for Cosmic Microwave Background Lensing
Authors:
Victor C. Chan,
Renée Hložek,
Joel Meyers,
Alexander van Engelen
Abstract:
Weak gravitational lensing of the cosmic microwave background (CMB) carries imprints of the physics operating at redshifts much lower than that of recombination and serves as an important probe of cosmological structure formation, dark matter physics, and the mass of neutrinos. Reconstruction of the CMB lensing deflection field through use of quadratic estimators has proven successful with existin…
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Weak gravitational lensing of the cosmic microwave background (CMB) carries imprints of the physics operating at redshifts much lower than that of recombination and serves as an important probe of cosmological structure formation, dark matter physics, and the mass of neutrinos. Reconstruction of the CMB lensing deflection field through use of quadratic estimators has proven successful with existing data but is known to be sub-optimal on small angular scales ($\ell > 3000$) for experiments with low noise levels. Future experiments will provide better observations in this regime, but these techniques will remain statistically limited by their approximations. We show that correlations between fluctuations of the large-scale temperature gradient power of the CMB sourced by $\ell < 2000$, and fluctuations to the local small-scale temperature power reveal a lensing signal which is prominent in even the real-space pixel statistics across a CMB temperature map. We present the development of the Small Correlated Against Large Estimator (SCALE), a novel estimator for the CMB lensing spectrum which offers promising complementary analysis alongside other reconstruction techniques in this regime. The SCALE method computes correlations between both the large/small-scale temperature gradient power in harmonic space, and it is able to quantitatively recover unbiased statistics of the CMB lensing field without the need for map-level reconstruction. SCALE can outperform quadratic estimator signal-to-noise by a factor of up to 1.5 in current and upcoming experiments for CMB lensing power spectra $C_{6000<L<8000}^{φφ}$.
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Submitted 26 February, 2023;
originally announced February 2023.
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The Gaia DR2 parallax zero point: Hierarchical modeling of red clump stars
Authors:
Victor C. Chan,
Jo Bovy
Abstract:
The systematic offset of Gaia parallaxes has been widely reported with Gaia's second data release, and it is expected to persist in future Gaia data. In order to use Gaia parallaxes to infer distances to high precision, we develop a hierarchical probabilistic model to determine the Gaia parallax zero point offset along with the calibration of an empirical model for luminosity of red clump stars by…
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The systematic offset of Gaia parallaxes has been widely reported with Gaia's second data release, and it is expected to persist in future Gaia data. In order to use Gaia parallaxes to infer distances to high precision, we develop a hierarchical probabilistic model to determine the Gaia parallax zero point offset along with the calibration of an empirical model for luminosity of red clump stars by combining astrometric and photometric measurements. Using a cross-matched sample of red clump stars from the Apache Point Observatory Galactic Evolution Experiment (APOGEE) and Gaia Data Release 2 (DR2), we report the parallax zero point offset in DR2 to be $ \varpi_0 = -48 \pm 1~μ\text{as} $. We infer the red clump absolute magnitude to be $ -1.622 \pm 0.004 $ in $ K_s $, $ 0.517 \pm 0.004 $ in $ G $, $ -1.019 \pm 0.004 $ in $ J $, and $ -1.516 \pm 0.004 $ in $ H $. The intrinsic scatter of the red clump is $ \sim 0.09 $ mag in $ J $, $ H $ and $ K_s $, or $ \sim 0.17 $ mag in $ G $. We tailor our models to accommodate more complex analyses such as investigating the variations of the parallax zero point with each source's observed magnitude, observed colour, and sky position. In particular, we find fluctuations of the zero point across the sky to be of order or less than a few 10s of $ μ\text{as} $.
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Submitted 20 March, 2020; v1 submitted 1 October, 2019;
originally announced October 2019.
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Ion implanted Si:P double-dot with gate tuneable interdot coupling
Authors:
V. C. Chan,
T. M. Buehler,
A. J. Ferguson,
D. R. McCamey,
D. J. Reilly,
A. S. Dzurak,
R. G. Clark,
C. Yang,
D. N. Jamieson
Abstract:
We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to each of the implanted dots enabling the charging behavior of the double-dot system to be studied independently of current transport. Using an electrostatic gate, the interdot coupling can be tuned fr…
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We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to each of the implanted dots enabling the charging behavior of the double-dot system to be studied independently of current transport. Using an electrostatic gate, the interdot coupling can be tuned from weak to strong coupling. In the weak interdot coupling regime, the system exhibits well-defined double-dot charging behavior. By contrast, in the strong interdot coupling regime, the system behaves as a single-dot.
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Submitted 23 February, 2006;
originally announced February 2006.
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Charge sensing in carbon nanotube quantum dots on microsecond timescales
Authors:
M. J. Biercuk,
D. J. Reilly,
T. M. Buehler,
V. C. Chan,
J. M. Chow,
R. G. Clark,
C. M. Marcus
Abstract:
We report fast, simultaneous charge sensing and transport measurements of gate-defined carbon nanotube quantum dots. Aluminum radio frequency single electron transistors (rf-SETs) capacitively coupled to the nanotube dot provide single-electron charge sensing on microsecond timescales. Simultaneously, rf reflectometry allows fast measurement of transport through the nanotube dot. Charge stabilit…
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We report fast, simultaneous charge sensing and transport measurements of gate-defined carbon nanotube quantum dots. Aluminum radio frequency single electron transistors (rf-SETs) capacitively coupled to the nanotube dot provide single-electron charge sensing on microsecond timescales. Simultaneously, rf reflectometry allows fast measurement of transport through the nanotube dot. Charge stability diagrams for the nanotube dot in the Coulomb blockade regime show extended Coulomb diamonds into the high-bias regime, as well as even-odd filling effects, revealed in charge sensing data.
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Submitted 20 October, 2005;
originally announced October 2005.
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An ion-implanted silicon single-electron transistor
Authors:
V. C. Chan,
D. R. McCamey,
T. M. Buehler,
A. J. Ferguson,
D. J. Reilly,
A. S. Dzurak,
R. G. Clark,
C. Yang,
D. N. Jamieson
Abstract:
We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus ions to a density above the metal-insulator-transition, with the tunnel junctions created by undoped regions. Surface gates above each of the tunnel junctions i…
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We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus ions to a density above the metal-insulator-transition, with the tunnel junctions created by undoped regions. Surface gates above each of the tunnel junctions independently control the tunnel coupling between the Si-SET island and leads. The device shows periodic Coulomb blockade with a charging energy e$^2$/2C$_Σ$ $\sim$ 250 $μ$eV, and demonstrates a reproducible and controllable pathway to a silicon-based SET using CMOS processing techniques.
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Submitted 13 October, 2005;
originally announced October 2005.
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Electric field induced charge noise in doped silicon: ionization of phosphorus donors
Authors:
A. J. Ferguson,
V. C. Chan,
A. R. Hamilton,
R. G. Clark
Abstract:
We report low frequency charge noise measurement on silicon substrates with different phosphorus do** densities. The measurements are performed with aluminum single electron transistors (SETs) at millikelvin temperatures where the substrates are in the insulating regime. By measuring the SET Coulomb oscillations, we find a gate voltage dependent charge noise on the more heavily doped substrate…
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We report low frequency charge noise measurement on silicon substrates with different phosphorus do** densities. The measurements are performed with aluminum single electron transistors (SETs) at millikelvin temperatures where the substrates are in the insulating regime. By measuring the SET Coulomb oscillations, we find a gate voltage dependent charge noise on the more heavily doped substrate. This charge noise, which is seen to have a 1/f spectrum, is attributed to the electric field induced tunneling of electrons from their phosphorus donor potentials.
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Submitted 10 November, 2005; v1 submitted 26 October, 2004;
originally announced October 2004.
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Observing sub-microsecond telegraph noise with the radio frequency single electron transistor
Authors:
T. M. Buehler,
D. J. Reilly,
R. P. Starrett,
V. C. Chan,
A. R. Hamilton,
A. S. Dzurak,
R. G. Clark
Abstract:
Telegraph noise, which originates from the switching of charge between meta-stable trap** sites, becomes increasingly important as device sizes approach the nano-scale. For charge-based quantum computing, this noise may lead to decoherence and loss of read out fidelity. Here we use a radio frequency single electron transistor (rf-SET) to probe the telegraph noise present in a typical semicondu…
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Telegraph noise, which originates from the switching of charge between meta-stable trap** sites, becomes increasingly important as device sizes approach the nano-scale. For charge-based quantum computing, this noise may lead to decoherence and loss of read out fidelity. Here we use a radio frequency single electron transistor (rf-SET) to probe the telegraph noise present in a typical semiconductor-based quantum computer architecture. We frequently observe micro-second telegraph noise, which is a strong function of the local electrostatic potential defined by surface gate biases. We present a method for studying telegraph noise using the rf-SET and show results for a charge trap in which the capture and emission of a single electron is controlled by the bias applied to a surface gate.
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Submitted 22 September, 2004;
originally announced September 2004.
