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Driving non-trivial quantum phases in conventional semiconductors with intense excitonic fields
Authors:
Vivek Pareek,
David R. Bacon,
Xing Zhu,
Yang-Hao Chan,
Fabio Bussolotti,
Nicholas S. Chan,
Joel Pérez Urquizo,
Kenji Watanabe,
Takashi Taniguchi,
Michael K. L. Man,
Julien Madéo,
Diana Y. Qiu,
Kuan Eng Johnson Goh,
Felipe H. da Jornada,
Keshav M. Dani
Abstract:
Inducing novel quantum phases and topologies in materials using intense light fields is a key objective of modern condensed matter physics, but nonetheless faces significant experimental challenges. Alternately, theory predicts that in the dense limit, excitons - collective excitations composed of Coulomb-bound electron-hole pairs - could also drive exotic quantum phenomena. However, the direct ob…
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Inducing novel quantum phases and topologies in materials using intense light fields is a key objective of modern condensed matter physics, but nonetheless faces significant experimental challenges. Alternately, theory predicts that in the dense limit, excitons - collective excitations composed of Coulomb-bound electron-hole pairs - could also drive exotic quantum phenomena. However, the direct observation of these phenomena requires the resolution of electronic structure in momentum space in the presence of excitons, which became possible only recently. Here, using time- and angle-resolved photoemission spectroscopy of an atomically thin semiconductor in the presence of a high-density of resonantly and coherently photoexcited excitons, we observe the Bardeen-Cooper-Schrieffer (BCS) excitonic state - analogous to the Cooper pairs of superconductivity. We see the valence band transform from a conventional paraboloid into a Mexican-hat like Bogoliubov dispersion - a hallmark of the excitonic insulator phase; and we observe the recently predicted giant exciton-driven Floquet effects. Our work realizes the promise that intense bosonic fields, other than photons, can also drive novel quantum phenomena and phases in materials.
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Submitted 13 March, 2024;
originally announced March 2024.
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Dominating Interlayer Resonant Energy Transfer in Type-II 2D Heterostructure
Authors:
Arka Karmakar,
Abdullah Al-Mahboob,
Christopher E. Petoukhoff,
Oksana Kravchyna,
Nicholas S. Chan,
Takashi Taniguchi,
Kenji Watanabe,
Keshav M. Dani
Abstract:
Type-II heterostructures (HSs) are essential components of modern electronic and optoelectronic devices. Earlier studies have found that in type-II transition metal dichalcogenide (TMD) HSs, the dominating carrier relaxation pathway is the interlayer charge transfer (CT) mechanism. Here, this report shows that, in a type-II HS formed between monolayers of MoSe2 and ReS2, nonradiative energy transf…
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Type-II heterostructures (HSs) are essential components of modern electronic and optoelectronic devices. Earlier studies have found that in type-II transition metal dichalcogenide (TMD) HSs, the dominating carrier relaxation pathway is the interlayer charge transfer (CT) mechanism. Here, this report shows that, in a type-II HS formed between monolayers of MoSe2 and ReS2, nonradiative energy transfer (ET) from higher to lower work function material (ReS2 to MoSe2) dominates over the traditional CT process with and without a charge-blocking interlayer. Without a charge-blocking interlayer, the HS area shows 3.6 times MoSe2 photoluminescence (PL) enhancement as compared to the MoSe2 area alone. After completely blocking the CT process, more than one order of magnitude higher MoSe2 PL emission was achieved from the HS area. This work reveals that the nature of this ET is truly a resonant effect by showing that in a similar type-II HS formed by ReS2 and WSe2, CT dominates over ET, resulting in a severely quenched WSe2 PL. This study not only provides significant insight into the competing interlayer processes, but also shows an innovative way to increase the PL quantum yield of the desired TMD material using ET process by carefully choosing the right material combination for HS.
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Submitted 7 October, 2021;
originally announced October 2021.
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Moiré-localized interlayer exciton wavefunctions captured by imaging its electron and hole constituents
Authors:
Ouri Karni,
Elyse Barré,
Vivek Pareek,
Johnathan D. Georgaras,
Michael K. L. Man,
Chakradhar Sahoo,
David R. Bacon,
Xing Zhu,
Henrique B. Ribeiro,
Aidan L. O'Beirne,
Jenny Hu,
Abdullah Al-Mahboob,
Mohamed M. M. Abdelrasoul,
Nicholas S. Chan,
Arka Karmakar,
Andrew J. Winchester,
Bumho Kim,
Kenji Watanabe,
Takashi Taniguchi,
Katayun Barmak,
Julien Madéo,
Felipe H. da Jornada,
Tony F. Heinz,
Keshav M. Dani
Abstract:
Interlayer excitons (ILXs) - electron-hole pairs bound across two atomically thin layered semiconductors - have emerged as attractive platforms to study exciton condensation, single-photon emission and other quantum-information applications. Yet, despite extensive optical spectroscopic investigations, critical information about their size, valley configuration and the influence of the moiré potent…
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Interlayer excitons (ILXs) - electron-hole pairs bound across two atomically thin layered semiconductors - have emerged as attractive platforms to study exciton condensation, single-photon emission and other quantum-information applications. Yet, despite extensive optical spectroscopic investigations, critical information about their size, valley configuration and the influence of the moiré potential remains unknown. Here, we captured images of the time- and momentum-resolved distribution of both the electron and the hole that bind to form the ILX in a WSe2/MoS2 heterostructure. We thereby obtain a direct measurement of the interlayer exciton diameter of ~5.4 nm, comparable to the moiré unit-cell length of 6.1 nm. Surprisingly, this large ILX is well localized within the moiré cell to a region of only 1.8 nm - smaller than the size of the exciton itself. This high degree of localization of the interlayer exciton is backed by Bethe-Salpeter equation calculations and demonstrates that the ILX can be localized within small moiré unit cells. Unlike large moiré cells, these are uniform over large regions, thus allowing the formation of extended arrays of localized excitations for quantum technology.
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Submitted 4 August, 2021;
originally announced August 2021.
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Unraveling the varied nature and roles of defects in hybrid halide perovskites with time-resolved photoemission electron microscopy
Authors:
Sofiia Kosar,
Andrew J. Winchester,
Tiarnan A. S. Doherty,
Stuart Macpherson,
Christopher E. Petoukhoff,
Kyle Frohna,
Miguel Anaya,
Nicholas S. Chan,
Julien Madéo,
Michael K. L. Man,
Samuel D. Stranks,
Keshav M. Dani
Abstract:
With rapidly growing photoconversion efficiencies, hybrid perovskite solar cells have emerged as promising contenders for next generation, low-cost photovoltaic technologies. Yet, the presence of nanoscale defect clusters, that form during the fabrication process, remains critical to overall device operation, including efficiency and long-term stability. To successfully deploy hybrid perovskites,…
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With rapidly growing photoconversion efficiencies, hybrid perovskite solar cells have emerged as promising contenders for next generation, low-cost photovoltaic technologies. Yet, the presence of nanoscale defect clusters, that form during the fabrication process, remains critical to overall device operation, including efficiency and long-term stability. To successfully deploy hybrid perovskites, we must understand the nature of the different types of defects, assess their potentially varied roles in device performance, and understand how they respond to passivation strategies. Here, by correlating photoemission and synchrotron-based scanning probe X-ray microscopies, we unveil three different types of defect clusters in state-of-the-art triple cation mixed halide perovskite thin films. Incorporating ultrafast time-resolution into our photoemission measurements, we show that defect clusters originating at grain boundaries are the most detrimental for photocarrier trap**, while lead iodide defect clusters are relatively benign. Hexagonal polytype defect clusters are only mildly detrimental individually, but can have a significant impact overall if abundant in occurrence. We also show that passivating defects with oxygen in the presence of light, a previously used approach to improve efficiency, has a varied impact on the different types of defects. Even with just mild oxygen treatment, the grain boundary defects are completely healed, while the lead iodide defects begin to show signs of chemical alteration. Our findings highlight the need for multi-pronged strategies tailored to selectively address the detrimental impact of the different defect types in hybrid perovskite solar cells.
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Submitted 26 July, 2021;
originally announced July 2021.
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Experimental measurement of the intrinsic excitonic wavefunction
Authors:
Michael K. L. Man,
Julien Madéo,
Chakradhar Sahoo,
Kaichen Xie,
Marshall Campbell,
Vivek Pareek,
Arka Karmakar,
E Laine Wong,
Abdullah Al-Mahboob,
Nicholas S. Chan,
David R. Bacon,
Xing Zhu,
Mohamed Abdelrasoul,
Xiaoquin Li,
Tony F. Heinz,
Felipe H. da Jornada,
Ting Cao,
Keshav M. Dani
Abstract:
An exciton, a two-body composite quasiparticle formed of an electron and hole, is a fundamental optical excitation in condensed-matter systems. Since its discovery nearly a century ago, a measurement of the excitonic wavefunction has remained beyond experimental reach. Here, we directly image the excitonic wavefunction in reciprocal space by measuring the momentum distribution of electrons photoem…
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An exciton, a two-body composite quasiparticle formed of an electron and hole, is a fundamental optical excitation in condensed-matter systems. Since its discovery nearly a century ago, a measurement of the excitonic wavefunction has remained beyond experimental reach. Here, we directly image the excitonic wavefunction in reciprocal space by measuring the momentum distribution of electrons photoemitted from excitons in monolayer WSe2. By transforming to real space, we obtain a visual of the distribution of the electron around the hole in an exciton. Further, by also resolving the energy coordinate, we confirm the elusive theoretical prediction that the photoemitted electron exhibits an inverted energy-momentum dispersion relationship reflecting the valence band where the partner hole remains, rather than that of conduction-band states of the electron.
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Submitted 25 November, 2020;
originally announced November 2020.
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Directly visualizing the momentum forbidden dark excitons and their dynamics in atomically thin semiconductors
Authors:
Julien Madéo,
Michael K. L. Man,
Chakradhar Sahoo,
Marshall Campbell,
Vivek Pareek,
E Laine Wong,
Abdullah Al Mahboob,
Nicholas S. Chan,
Arka Karmakar,
Bala Murali Krishna Mariserla,
Xiaoqin Li,
Tony F. Heinz,
Ting Cao,
Keshav M. Dani
Abstract:
Resolving the momentum degree of freedom of excitons - electron-hole pairs bound by the Coulomb attraction in a photoexcited semiconductor, has remained a largely elusive goal for decades. In atomically thin semiconductors, such a capability could probe the momentum forbidden dark excitons, which critically impact proposed opto-electronic technologies, but are not directly accessible via optical t…
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Resolving the momentum degree of freedom of excitons - electron-hole pairs bound by the Coulomb attraction in a photoexcited semiconductor, has remained a largely elusive goal for decades. In atomically thin semiconductors, such a capability could probe the momentum forbidden dark excitons, which critically impact proposed opto-electronic technologies, but are not directly accessible via optical techniques. Here, we probe the momentum-state of excitons in a WSe2 monolayer by photoemitting their constituent electrons, and resolving them in time, momentum and energy. We obtain a direct visual of the momentum forbidden dark excitons, and study their properties, including their near-degeneracy with bright excitons and their formation pathways in the energy-momentum landscape. These dark excitons dominate the excited state distribution - a surprising finding that highlights their importance in atomically thin semiconductors.
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Submitted 1 May, 2020;
originally announced May 2020.
