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Wireless Channel Prediction via Gaussian Mixture Models
Authors:
Nurettin Turan,
Benedikt Böck,
Kai Jie Chan,
Benedikt Fesl,
Friedrich Burmeister,
Michael Joham,
Gerhard Fettweis,
Wolfgang Utschick
Abstract:
In this work, we utilize a Gaussian mixture model (GMM) to capture the underlying probability density function (PDF) of the channel trajectories of moving mobile terminals (MTs) within the coverage area of a base station (BS) in an offline phase. We propose to leverage the same GMM for channel prediction in the online phase. Our proposed approach does not require signal-to-noise ratio (SNR)-specif…
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In this work, we utilize a Gaussian mixture model (GMM) to capture the underlying probability density function (PDF) of the channel trajectories of moving mobile terminals (MTs) within the coverage area of a base station (BS) in an offline phase. We propose to leverage the same GMM for channel prediction in the online phase. Our proposed approach does not require signal-to-noise ratio (SNR)-specific training and allows for parallelization. Numerical simulations for both synthetic and measured channel data demonstrate the effectiveness of our proposed GMM-based channel predictor compared to state-ofthe-art channel prediction methods.
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Submitted 13 February, 2024;
originally announced February 2024.
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Codes for Preventing Zeros at Partially Defective Memory Positions
Authors:
Haider Al Kim,
Kai Jie Chan
Abstract:
This work deals with error correction for non-volatile memories that are partially defective at some levels. Such memory cells can only store incomplete information since some of their levels cannot be utilized entirely due to, e.g., wearout. On top of that, this paper corrects random errors $t\geq 1$ that could happen among $u$ partially defective cells while preserving their constraints. First,…
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This work deals with error correction for non-volatile memories that are partially defective at some levels. Such memory cells can only store incomplete information since some of their levels cannot be utilized entirely due to, e.g., wearout. On top of that, this paper corrects random errors $t\geq 1$ that could happen among $u$ partially defective cells while preserving their constraints. First, we show that the probability of violating the partially defective cells' restriction due to random errors is not trivial. Next, we update the models in [1] such that the coefficients of the output encoded vector plus the error vector at the partially defective positions are non-zero. Lastly, we state a simple proposition (Proposition 3) for masking the partial defects using a code with a minimum distance $d$ such that $d\geq 2(u+t)+1$. "Masking" means selecting a word whose entries correspond to writable levels in the (partially) defective positions. A comparison shows that masking $u$ cells by this proposition for a particular BCH code is as effective as using the complicated coding scheme proven in [1, Theorem 1].
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Submitted 22 August, 2022; v1 submitted 13 May, 2022;
originally announced May 2022.
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Antiferromagnetic Order and Spin-Canting Transition in the Corrugated Square Net Compound Cu$_3$(TeO$_4$)(SO$_4$)$\cdot$H$_2$O
Authors:
Zhi-Cheng Wang,
Kulatheepan Thanabalasingam,
Jan P. Scheifers,
Alenna Streeter,
Gregory T. McCandless,
Jonathan Gaudet,
Craig M. Brown,
Carlo U. Segre,
k Julia Y. Chan,
Fazel Tafti
Abstract:
Strongly correlated electrons in layered perovskite structures have been the birthplace of high-temperature superconductivity, spin liquid, and quantum criticality. Specifically, the cuprate materials with layered structures made of corner sharing square planar CuO$_4$ units have been intensely studied due to their Mott insulating grounds state which leads to high-temperature superconductivity upo…
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Strongly correlated electrons in layered perovskite structures have been the birthplace of high-temperature superconductivity, spin liquid, and quantum criticality. Specifically, the cuprate materials with layered structures made of corner sharing square planar CuO$_4$ units have been intensely studied due to their Mott insulating grounds state which leads to high-temperature superconductivity upon do**. Identifying new compounds with similar lattice and electronic structures has become a challenge in solid state chemistry. Here, we report the hydrothermal crystal growth of a new copper tellurite sulfate Cu$_3$(TeO$_4$)(SO$_4$)$\cdot$H$_2$O, a promising alternative to layered perovskites. The orthorhombic phase (space group $Pnma$) is made of corrugated layers of corner-sharing CuO$_4$ square-planar units that are edge-shared with TeO$_4$ units. The layers are linked by slabs of corner-sharing CuO$_4$ and SO$_4$. Using both the bond valence sum analysis and magnetization data, we find purely Cu$^{2+}$ ions within the layers, but a mixed valence of Cu$^{2+}$/Cu${^+}$ between the layers. Cu$_3$(TeO$_4$)(SO$_4$)$\cdot$H$_2$O undergoes an antiferromagnetic transition at $T_N$=67 K marked by a peak in the magnetic susceptibility. Upon further cooling, a spin-canting transition occurs at $T^{\star}$=12 K evidenced by a kink in the heat capacity. The spin-canting transition is explained based on a $J_1$-$J_2$ model of magnetic interactions, which is consistent with the slightly different in-plane super-exchange paths. We present Cu$_3$(TeO$_4$)(SO$_4$)$\cdot$H$_2$O as a promising platform for the future do** and strain experiments that could tune the Mott insulating ground state into superconducting or spin liquid states.
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Submitted 1 July, 2021;
originally announced July 2021.
