In depth nano spectroscopic analysis on homogeneously switching double barrier memristive devices
Authors:
Julian Strobel,
Mirko Hansen,
Sven Dirkmann,
Krishna Kanth Neelisetty,
Martin Ziegler,
Georg Haberfehlner,
Radian Popescu,
Gerald Kothleitner,
Venkata Sai Kiran Chakravadhanula,
Christian Kübel,
Hermann Kohlstedt,
Thomas Mussenbrock,
Lorenz Kienle
Abstract:
Memristors based on a double barrier design have been analysed by various nano spectroscopic methods to unveil details about its microstructure and conduction mechanism. The device consists of an AlOx tunnel barrier and a NbOy/Au Schottky barrier sandwiched between Nb bottom electrode and Au top electrode. As it was anticipated that the local chemical composition of the tunnel barrier, i.e. oxidat…
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Memristors based on a double barrier design have been analysed by various nano spectroscopic methods to unveil details about its microstructure and conduction mechanism. The device consists of an AlOx tunnel barrier and a NbOy/Au Schottky barrier sandwiched between Nb bottom electrode and Au top electrode. As it was anticipated that the local chemical composition of the tunnel barrier, i.e. oxidation state of the metals as well as concentration and distribution of oxygen ions, have a major influence on electronic conduction, these factors were carefully analysed. A combined approach was chosen in order to reliably investigate electronic states of Nb and O by electron energy-loss spectroscopy as well as map elements whose transition edges exhibit a different energy range by energy-dispersive X-ray spectroscopy like Au and Al. The results conclusively demonstrate significant oxidation of the bottom electrode as well as a small oxygen vacancy concentration in the Al oxide tunnel barrier. Possible scenarios to explain this unexpected additional oxide layer are discussed and kinetic Monte Carlo simulations were applied in order to identify its influence on conduction mechanisms in the device. In light of the strong deviations between observed and originally sought layout, this study highlights the robustness in terms of structural deviations of the double barrier memristor device.
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Submitted 20 March, 2017;
originally announced March 2017.
Light emission, light detection and strain sensing with nanocrystalline graphene
Authors:
Adnan Riaz,
Feliks Pyatkov,
Asiful Alam,
Simone Dehm,
Alexandre Felten,
Venkata S. K. Chakravadhanula,
Benjamin S. Flavel,
Christian Kübel,
Uli Lemmer,
Ralph Krupke
Abstract:
Graphene is of increasing interest for optoelectronic applications exploiting light detection, light emission and light modulation. Intrinsically light matter interaction in graphene is of a broadband type. However by integrating graphene into optical micro cavities also narrow band light emitters and detectors have been demonstrated. The devices benefit from the transparency, conductivity and pro…
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Graphene is of increasing interest for optoelectronic applications exploiting light detection, light emission and light modulation. Intrinsically light matter interaction in graphene is of a broadband type. However by integrating graphene into optical micro cavities also narrow band light emitters and detectors have been demonstrated. The devices benefit from the transparency, conductivity and processability of the atomically thin material. To this end we explore in this work the feasibility of replacing graphene by nanocrystalline graphene, a material which can be grown on dielectric surfaces without catalyst by graphitization of polymeric films. We have studied the formation of nanocrystalline graphene on various substrates and under different graphitization conditions. The samples were characterized by resistance, optical transmission, Raman, X-ray photoelectron spectroscopy, atomic force microscopy and electron microscopy measurements. The conducting and transparent wafer-scale material with nanometer grain size was also patterned and integrated into devices for studying light-matter interaction. The measurements show that nanocrystalline graphene can be exploited as an incandescent emitter and bolometric detector similar to crystalline graphene. Moreover the material exhibits piezoresistive behavior which makes nanocrystalline graphene interesting for transparent strain sensors.
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Submitted 18 October, 2016;
originally announced October 2016.