Growth of Pure and Intercalated ZrTe2, TiTe2 and HfTe2 Dichalcogenide Single Crystals by Isothermal Chemical Vapor Transport
Authors:
Lucas E. Correa,
Leandro R. de Faria,
Rennan S. Cardoso,
Nabil Chaia,
Mario S. da Luz,
Milton S. Torikachvili,
Antonio J. S. Machado
Abstract:
We report on a modified chemical vapor transport (CVT) methodology for the growth of pure and intercalated Zr, Ti, and Hf dichalcogenide single crystals, e.g. ZrTe2, Gd0.05ZrTe2, HfTe2, and Cu0.05TiTe2. While the most common method for CVT growth is carried out in quartz tubes subjected to a temperature gradient between the charge and the growth location, the growth using this isothermal-CVT (ICVT…
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We report on a modified chemical vapor transport (CVT) methodology for the growth of pure and intercalated Zr, Ti, and Hf dichalcogenide single crystals, e.g. ZrTe2, Gd0.05ZrTe2, HfTe2, and Cu0.05TiTe2. While the most common method for CVT growth is carried out in quartz tubes subjected to a temperature gradient between the charge and the growth location, the growth using this isothermal-CVT (ICVT) method takes place isothermally in sealed quartz tubes placed horizontally in box furnaces, using iodine (I2) as the transport agent. The structure and composition of crystals were determined by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), and induced coupling plasma (ICP). The crystals grown with this method can be large, and show excellent crystallinity and homogeneity. Their morphology is plate-like, and the larger dimensions can be as long as 15 mm.
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Submitted 23 March, 2022;
originally announced March 2022.
T2 phase site occupancies in the Cr--Si--B system: a combined synchroton-XRD/first-principles study
Authors:
Thiago T. Dorini,
Bruno X. de Freitas,
Pedro P. Ferreira,
Nabil Chaia,
Paulo A. Suzuki,
Jean-Marc Joubert,
Carlos A. Nunes,
Gilberto C. Coelho,
Luiz T. F. Eleno
Abstract:
Boron and Silicon site occupancies of the T2 phase in the Cr-Si-B system were investigated experimentally and by first-principles electronic-structure calculations within the scope of the Density Functional Theory (DFT). A sample with nominal composition Cr$_{0.625}$B$_{0.175}$Si$_{0.2}$ was arc-melted under argon, encapsulated in a quartz-tube and heat-treated at 1400°C for 96 hours. It was then…
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Boron and Silicon site occupancies of the T2 phase in the Cr-Si-B system were investigated experimentally and by first-principles electronic-structure calculations within the scope of the Density Functional Theory (DFT). A sample with nominal composition Cr$_{0.625}$B$_{0.175}$Si$_{0.2}$ was arc-melted under argon, encapsulated in a quartz-tube and heat-treated at 1400°C for 96 hours. It was then analyzed using Scanning Electron Microscopy (SEM) and X-Ray Diffractometry (XRD) with synchrotron radiation. An excellent agreement was obtained between experiments and theoretical calculations, revealing that Si occupies preferably the $4a$ sublattice of the structure due to the presence of weak B bonds, making the site preferences a key factor for its stabilization. The results of this work provide important information to support a better description of this phase in alloys with Si and B, since T2 phases are known to occur in many important Transition Metal-Si-B ternary systems, such as Nb/Mo/W/Ta/V-Si-B.
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Submitted 15 March, 2021; v1 submitted 14 May, 2020;
originally announced May 2020.
