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Efficient terahertz emission from InAs nanowires
Authors:
Denis V. Seletskiy,
Michael P. Hasselbeck,
Jeffrey G. Cederberg,
Aaron Katzenmeyer,
Maria E. Toimil-Molares,
François Léonard,
A. Alec Talin,
Mansoor Sheik-Bahae
Abstract:
We observe intense pulses of far-infrared electromagnetic radiation emitted from arrays of InAs nanowires. The THz radiation power efficiency of these structures is about 15 times higher compared to a planar InAs substrate. This is explained by the preferential orientation of coherent plasma motion to the wire surface, which overcomes radiation trap** by total-internal reflection. We present evi…
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We observe intense pulses of far-infrared electromagnetic radiation emitted from arrays of InAs nanowires. The THz radiation power efficiency of these structures is about 15 times higher compared to a planar InAs substrate. This is explained by the preferential orientation of coherent plasma motion to the wire surface, which overcomes radiation trap** by total-internal reflection. We present evidence that this radiation originates from a low-energy acoustic surface plasmon mode of the nanowire. This is supported by independent measurements of electronic transport on individual nanowires, ultrafast THz spectroscopy and theoretical analysis. Our combined experiments and analysis further indicate that these plasmon modes are specific to high aspect ratio geometries.
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Submitted 2 September, 2011;
originally announced September 2011.
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Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry
Authors:
T. M. Lu,
N. C. Bishop,
T. Pluym,
J. Means,
P. G. Kotula,
J. Cederberg,
L. A. Tracy,
J. Dominguez,
M. P. Lilly,
M. S. Carroll
Abstract:
We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich dielectric interfaces and minimizes background dopants. A mobility of 1.6\times10^5 cm^2/Vs at 5.8\times10^{11}/cm^2 is measured in Hall bars that witness the same…
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We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich dielectric interfaces and minimizes background dopants. A mobility of 1.6\times10^5 cm^2/Vs at 5.8\times10^{11}/cm^2 is measured in Hall bars that witness the same device process flow as the quantum dot. Periodic Coulomb blockade (CB) is measured in a double-top-gated lateral quantum dot nanostructure. The CB terminates with open diamonds up to \pm 10 mV of DC voltage across the device. The devices were fabricated within a 150 mm Si foundry setting that uses implanted ohmics and chemical-vapor-deposited dielectrics, in contrast to previously demonstrated enhancement-mode SiGe/s-Si structures made with AuSb alloyed ohmics and atomic-layer-deposited dielectric. A modified implant, polysilicon formation and annealing conditions were utilized to minimize the thermal budget so that the buried s-Si layer would not be washed out by Ge/Si interdiffusion.
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Submitted 1 June, 2011;
originally announced June 2011.
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Observation of Space-Charge-Limited Transport in InAs Nanowires
Authors:
Aaron M. Katzenmeyer,
François Léonard,
A. Alec Talin,
M. Eugenia Toimil-Molares,
Jeffrey G. Cederberg,
Jianyu Huang,
Jessica L. Lensch-Falk
Abstract:
Recent theory and experiment have suggested that space-charge-limited transport should be prevalent in high aspect-ratio semiconducting nanowires. We report on InAs nanowires exhibiting this mode of transport and utilize the underlying theory to determine the mobility and effective carrier concentration of individual nanowires, both of which are found to be diameter-dependent. Intentionally induce…
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Recent theory and experiment have suggested that space-charge-limited transport should be prevalent in high aspect-ratio semiconducting nanowires. We report on InAs nanowires exhibiting this mode of transport and utilize the underlying theory to determine the mobility and effective carrier concentration of individual nanowires, both of which are found to be diameter-dependent. Intentionally induced failure by Joule heating supports the notion of space-charge-limited transport and proposes reduced thermal conductivity due to the nanowires polymorphism.
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Submitted 9 October, 2010;
originally announced October 2010.
