Showing 1–47 of 47 results for author: Caviglia, A D

Electron-Beam Writing of Atomic-Scale Reconstructions at Oxide Interfaces

Authors: Greta Segantini, Chih-Ying Hsu, Carl Willem Rischau, Patrick Blah, Mattias Matthiesen, Stefano Gariglio, Jean-Marc Triscone, Duncan T. L. Alexander, Andrea D. Caviglia

Abstract: The epitaxial growth of complex oxides enables the production of high-quality films, yet substrate choice is restricted to certain symmetry and lattice parameters, thereby limiting the technological applications of epitaxial oxides. In comparison, the development of free-standing oxide membranes gives opportunities to create novel heterostructures by non-epitaxial stacking of membranes, opening ne… ▽ More The epitaxial growth of complex oxides enables the production of high-quality films, yet substrate choice is restricted to certain symmetry and lattice parameters, thereby limiting the technological applications of epitaxial oxides. In comparison, the development of free-standing oxide membranes gives opportunities to create novel heterostructures by non-epitaxial stacking of membranes, opening new possibilities for materials design. Here, we introduce a method for writing, with atomic precision, ionically bonded crystalline material across the gap between an oxide membrane and a carrier substrate. The process involves a thermal pre-treatment, followed by localized exposure to the raster scan of a scanning transmission electron microscopy (STEM) beam. STEM imaging and electron energy-loss spectroscopy show that we achieve atomically sharp interface reconstructions between a 30 nm-thick SrTiO${_3}$ membrane and a niobium-doped SrTiO${_3}$(001)-oriented carrier substrate. These findings indicate new strategies for fabricating synthetic heterostructures with novel structural and electronic properties. △ Less

Submitted 18 June, 2024; originally announced June 2024.

Orbital design of Berry curvature: pinch points and giant dipoles induced by crystal fields

Authors: Maria Teresa Mercaldo, Canio Noce, Andrea D. Caviglia, Mario Cuoco, Carmine Ortix

Abstract: The Berry curvature (BC) - a quantity encoding the geometric properties of the electronic wavefunctions in a solid - is at the heart of different Hall-like transport phenomena, including the anomalous Hall and the non-linear Hall and Nernst effects. In non-magnetic quantum materials with acentric crystalline arrangements, local concentrations of BC are generally linked to single-particle wavefunct… ▽ More The Berry curvature (BC) - a quantity encoding the geometric properties of the electronic wavefunctions in a solid - is at the heart of different Hall-like transport phenomena, including the anomalous Hall and the non-linear Hall and Nernst effects. In non-magnetic quantum materials with acentric crystalline arrangements, local concentrations of BC are generally linked to single-particle wavefunctions that are a quantum superposition of electron and hole excitations. BC-mediated effects are consequently observed in two-dimensional systems with pairs of massive Dirac cones and three-dimensional bulk crystals with quartets of Weyl cones. Here, we demonstrate that in materials equipped with orbital degrees of freedom local BC concentrations can arise even in the complete absence of hole excitations. In these solids, the crystals fields appearing in very low-symmetric structures trigger BCs characterized by hot-spots and singular pinch points. These characteristics naturally yield giant BC dipoles and large non-linear transport responses in time-reversal symmetric conditions. △ Less

Submitted 11 January, 2023; originally announced January 2023.

Comments: 11 pages, 4 figure and supplemental material (6 pages, figures)

Journal ref: npj Quantum Mater. 8, 12 (2023)

Controlling magnetism with light in a zero orbital angular momentum antiferromagnet

Authors: Mattias Matthiesen, Jorrit R. Hortensius, Samuel Mañas-Valero, Makars Šiškins, Boris A. Ivanov, Herre S. J. van der Zant, E. Coronado, Dmytro Afanasiev, Andrea D. Caviglia

Abstract: Antiferromagnetic materials feature intrinsic ultrafast spin dynamics, making them ideal candidates for future magnonic devices operating at THz frequencies. A major focus of current research is the investigation of optical methods for the efficient generation of coherent magnons in antiferromagnetic insulators. In magnetic lattices endowed with orbital angular momentum, spin-orbit coupling enable… ▽ More Antiferromagnetic materials feature intrinsic ultrafast spin dynamics, making them ideal candidates for future magnonic devices operating at THz frequencies. A major focus of current research is the investigation of optical methods for the efficient generation of coherent magnons in antiferromagnetic insulators. In magnetic lattices endowed with orbital angular momentum, spin-orbit coupling enables spin dynamics through the resonant excitation of low-energy electric dipoles such as phonons and orbital resonances which interact with spins. However, in magnetic systems with zero orbital angular momentum, microscopic pathways for the resonant and low-energy optical excitation of coherent spin dynamics are lacking. Here, we consider experimentally the relative merits of electronic and vibrational excitations for the optical control of zero orbital angular momentum magnets, focusing on a limit case: the antiferromagnet manganese thiophoshate (MnPS3), constituted by orbital singlet Mn2+ ions. We study the correlation of spins with two types of excitations within its band gap: a bound electron orbital excitation from the singlet orbital ground state of Mn2+ into an orbital triplet state, which causes coherent spin precession, and a vibrational excitation of the crystal field that causes thermal spin disorder. Our findings cast orbital transitions as key targets for magnetic control in insulators constituted by magnetic centers of zero orbital angular momentum. △ Less

Submitted 22 April, 2022; originally announced April 2022.

Comments: 9 pages, 4 figures

Designing spin and orbital sources of Berry curvature at oxide interfaces

Authors: Edouard Lesne, Yildiz G. Saǧlam, Raffaele Battilomo, Maria Teresa Mercaldo, Thierry C. van Thiel, Ulderico Filippozzi, Canio Noce, Mario Cuoco, Gary A. Steele, Carmine Ortix, Andrea D. Caviglia

Abstract: Quantum materials can display physical phenomena rooted in the geometry of electronic wavefunctions. The corresponding geometric tensor is characterized by an emergent field known as Berry curvature (BC). Large BCs typically arise when electronic states with different spin, orbital or sublattice quantum numbers hybridize at finite crystal momentum. In all materials known to date, the BC is trigger… ▽ More Quantum materials can display physical phenomena rooted in the geometry of electronic wavefunctions. The corresponding geometric tensor is characterized by an emergent field known as Berry curvature (BC). Large BCs typically arise when electronic states with different spin, orbital or sublattice quantum numbers hybridize at finite crystal momentum. In all materials known to date, the BC is triggered by the hybridization of a single type of quantum number. Here, we report the discovery of the first material system having both spin and orbital-sourced BC: LaAlO$_3$/SrTiO$_3$ interfaces grown along the [111] direction. We detect independently these two sources and directly probe the BC associated to the spin quantum number through measurements of an anomalous planar Hall effect. The observation of a nonlinear Hall effect with time-reversal symmetry signals large orbital-mediated BC dipoles. The coexistence of different forms of BC enables the combination of spintronic and optoelectronic functionalities in a single material. △ Less

Submitted 3 February, 2023; v1 submitted 28 January, 2022; originally announced January 2022.

Comments: 32 pages, 25 figures, accepted in Nature Materials

Journal ref: Nature Materials 22, 576 (2023)

Self-sealing complex oxide resonators

Authors: Martin Lee, Martin Robin, Ruben Guis, Ulderico Filippozzi, Dong Hoon Shin, Thierry C. van Thiel, Stijn Paardekooper, Johannes R. Renshof, Herre S. J. van der Zant, Andrea D. Caviglia, Gerard J. Verbiest, Peter G. Steeneken

Abstract: Although 2D materials hold great potential for next-generation pressure sensors, recent studies revealed that gases permeate along the membrane-surface interface that is only weakly bound by van der Waals interactions, necessitating additional sealing procedures. In this work, we demonstrate the use of free-standing complex oxides as self-sealing membranes that allow the reference cavity of pressu… ▽ More Although 2D materials hold great potential for next-generation pressure sensors, recent studies revealed that gases permeate along the membrane-surface interface that is only weakly bound by van der Waals interactions, necessitating additional sealing procedures. In this work, we demonstrate the use of free-standing complex oxides as self-sealing membranes that allow the reference cavity of pressure sensors to be sealed by a simple anneal. To test the hermeticity, we study the gas permeation time constants in nano-mechanical resonators made from SrRuO3 and SrTiO3 membranes suspended over SiO2/Si cavities which show an improvement up to 4 orders of magnitude in the permeation time constant after annealing the devices for 15 minutes. Similar devices fabricated on Si3N4/Si do not show such improvements, suggesting that the adhesion increase over SiO2 is mediated by oxygen bonds that are formed at the SiO2/complex oxide interface during the self-sealing anneal. We confirm the enhancement of adhesion by picosecond ultrasonics measurements which show an increase in the interfacial stiffness by 70% after annealing. Since it is straigthforward to apply, the presented self-sealing method is thus a promising route toward realizing ultrathin hermetic pressure sensors. △ Less

Submitted 8 September, 2021; originally announced September 2021.

Comments: 7 pages, 5 figures

Coupling charge and topological reconstructions at polar oxide interfaces

Authors: T. C. van Thiel, W. Brzezicki, C. Autieri, J. R. Hortensius, D. Afanasiev, N. Gauquelin, D. Jannis, N. Janssen, D. J. Groenendijk, J. Fatermans, S. van Aert, J. Verbeeck, M. Cuoco, A. D. Caviglia

Abstract: In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion-symmetry across the heterointerfaces. A notable example is the interface between polar and non-polar materials, where valence discontinuities lead to otherwise inaccessible charge and spin states. This approach paved the way to the discovery of numerous unconventiona… ▽ More In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion-symmetry across the heterointerfaces. A notable example is the interface between polar and non-polar materials, where valence discontinuities lead to otherwise inaccessible charge and spin states. This approach paved the way to the discovery of numerous unconventional properties absent in the bulk constituents. However, control of the geometric structure of the electronic wavefunctions in correlated oxides remains an open challenge. Here, we create heterostructures consisting of ultrathin SrRuO$_3$, an itinerant ferromagnet hosting momentum-space sources of Berry curvature, and LaAlO$_3$, a polar wide-bandgap insulator. Transmission electron microscopy reveals an atomically sharp LaO/RuO$_2$/SrO interface configuration, leading to excess charge being pinned near the LaAlO$_3$/SrRuO$_3$ interface. We demonstrate through magneto-optical characterization, theoretical calculations and transport measurements that the real-space charge reconstruction modifies the momentum-space Berry curvature in SrRuO$_3$, driving a reorganization of the topological charges in the band structure. Our results illustrate how the topological and magnetic features of oxides can be manipulated by engineering charge discontinuities at oxide interfaces. △ Less

Submitted 7 July, 2021; originally announced July 2021.

Comments: 5 pages main text (4 figures), 29 pages of supplementary information

Journal ref: Phys. Rev. Lett. 127, 127202 (2021)

Large tunability of strain in WO3 single-crystal microresonators controlled by exposure to H2 gas

Authors: Nicola Manca, Giordano Mattoni, Marco Pelassa, Warner J. Venstra, Herre S. J. van der Zant, Andrea D. Caviglia

Abstract: Strain engineering is one of the most effective approaches to manipulate the physical state of materials, control their electronic properties, and enable crucial functionalities. Because of their rich phase diagrams arising from competing ground states, quantum materials are an ideal playground for on-demand material control, and can be used to develop emergent technologies, such as adaptive elect… ▽ More Strain engineering is one of the most effective approaches to manipulate the physical state of materials, control their electronic properties, and enable crucial functionalities. Because of their rich phase diagrams arising from competing ground states, quantum materials are an ideal playground for on-demand material control, and can be used to develop emergent technologies, such as adaptive electronics or neuromorphic computing. It was recently suggested that complex oxides could bring unprecedented functionalities to the field of nanomechanics, but the possibility of precisely controlling the stress state of materials is so far lacking. Here we demonstrate the wide and reversible manipulation of the stress state of single-crystal WO3 by strain engineering controlled by catalytic hydrogenation. Progressive incorporation of hydrogen in freestanding ultra-thin structures determines large variations of their mechanical resonance frequencies and induces static deformation. Our results demonstrate hydrogen do** as a new paradigm to reversibly manipulate the mechanical properties of nanodevices based on materials control. △ Less

Submitted 15 June, 2021; originally announced June 2021.

Comments: 6 pages, 4 figures, 9 supplementary sections

Journal ref: ACS Appl. Mater. Interfaces 11, 44438 (2019)

Coherent spin-wave transport in an antiferromagnet

Authors: J. R. Hortensius, D. Afanasiev, M. Matthiesen, R. Leenders, R. Citro, A. V. Kimel, R. V. Mikhaylovskiy, B. A. Ivanov, A. D. Caviglia

Abstract: Magnonics is a research field complementary to spintronics, in which the quanta of spin waves (magnons) replace electrons as information carriers, promising less energy dissipation. The development of ultrafast nanoscale magnonic logic circuits calls for new tools and materials to generate coherent spin waves with frequencies as high, and wavelengths as short, as possible. Antiferromagnets can hos… ▽ More Magnonics is a research field complementary to spintronics, in which the quanta of spin waves (magnons) replace electrons as information carriers, promising less energy dissipation. The development of ultrafast nanoscale magnonic logic circuits calls for new tools and materials to generate coherent spin waves with frequencies as high, and wavelengths as short, as possible. Antiferromagnets can host spin waves at THz frequencies and are therefore seen as a future platform for the fastest and the least dissipative transfer of information. However, the generation of short-wavelength coherent propagating magnons in antiferromagnets has so far remained elusive. Here we report the efficient emission and detection of a nanometer-scale wavepacket of coherent propagating magnons in antiferromagnetic DyFeO3 using ultrashort pulses of light. The subwavelength nanoscale confinement of the laser field due to large absorption creates a strongly non-uniform spin excitation profile, thereby enabling the propagation of a broadband continuum of coherent THz spin waves. The wavepacket features magnons with detected wavelengths down to 125 nm and supersonic velocities up to 13 km/s that propagate over macroscopic distances. The long-sought source of coherent short-wavelength spin carriers demonstrated here opens up new prospects for THz antiferromagnetic magnonics and coherence mediated logic devices at THz frequencies. △ Less

Submitted 12 May, 2021; originally announced May 2021.

Comments: 33 pages, 13 figures

Journal ref: Nature Physics 17, 1001-1006 (2021)

Gate-tunable hallmarks of unconventional superconductivity in non-centrosymmetric nanowires

Authors: Gyanendra Singh, Claudio Guarcello, Edouard Lesne, Dag Winkler, Tord Claeson, Thilo Bauch, Floriana Lombardi, Andrea D. Caviglia, Roberta Citro, Mario Cuoco, Alexei Kalaboukhov

Abstract: Two dimensional SrTiO3-based interfaces stand out among non-centrosymmetric superconductors due to their intricate interplay of gate tunable Rashba spin-orbit coupling and multi-orbital electronic occupations, whose combination theoretically prefigures various forms of non-standard superconductivity. However, a convincing demonstration by phase sensitive measurements has been elusive so far. Here,… ▽ More Two dimensional SrTiO3-based interfaces stand out among non-centrosymmetric superconductors due to their intricate interplay of gate tunable Rashba spin-orbit coupling and multi-orbital electronic occupations, whose combination theoretically prefigures various forms of non-standard superconductivity. However, a convincing demonstration by phase sensitive measurements has been elusive so far. Here, by employing superconducting transport measurements in nano-devices we present clear-cut experimental evidences of unconventional superconductivity in the LaAlO3/SrTiO3 interface. The central observations are the substantial anomalous enhancement of the critical current by small magnetic fields applied perpendicularly to the plane of electron motion, and the asymmetric response with respect to the magnetic field direction. These features have a unique trend in intensity and sign upon electrostatic gating that, together with their dependence on temperature and nanowire dimensions, cannot be accommodated within a scenario of canonical spin-singlet superconductivity. We theoretically demonstrate that the hall-marks of the experimental observations unambiguously indicate a coexistence of Josephson channels with sign difference and intrinsic phase shift. The character of these findings establishes the occurrence of independent components of unconventional pairing in the superconducting state due to inversion symmetry breaking. The outcomes open new venues for the investigation of multi-orbital non-centrosymmetric superconductivity and Josephson-based devices for quantum technologies. △ Less

Submitted 1 April, 2021; originally announced April 2021.

Comments: 9 pages, 4 figures

Journal ref: npj Quantum Mater. 7, 2 (2022)

Non-universal current flow near the metal-insulator transition in an oxide interface

Authors: Eylon Persky, Naor Vardi, Ana Mafalda R. V. L. Monteiro, Thierry C. van Thiel, Hyeok Yoon, Yanwu Xie, Benoît Fauqué, Andrea D. Caviglia, Harold Y. Hwang, Kamran Behnia, Jonathan Ruhman, Beena Kalisky

Abstract: In systems near phase transitions, macroscopic properties often follow algebraic scaling laws, determined by the dimensionality and the underlying symmetries of the system. The emergence of such universal scaling implies that microscopic details are irrelevant. Here, we locally investigate the scaling properties of the metal-insulator transition at the LaAlO3/SrTiO3 interface. We show that, by cha… ▽ More In systems near phase transitions, macroscopic properties often follow algebraic scaling laws, determined by the dimensionality and the underlying symmetries of the system. The emergence of such universal scaling implies that microscopic details are irrelevant. Here, we locally investigate the scaling properties of the metal-insulator transition at the LaAlO3/SrTiO3 interface. We show that, by changing the dimensionality and the symmetries of the electronic system, coupling between structural and electronic properties prevents the universal behavior near the transition. By imaging the current flow in the system, we reveal that structural domain boundaries modify the filamentary flow close to the transition point, preventing a fractal with the expected universal dimension from forming. Our results offer a generic platform to engineer electronic transitions on the nanoscale. △ Less

Submitted 15 March, 2021; originally announced March 2021.

Comments: 19 pages, 6 figures

Controlling the anisotropy of a van der Waals antiferromagnet with light

Authors: D. Afanasiev, J. R. Hortensius, M. Matthiesen, S. Mañas-Valero, M. Šiškins, M. Lee, E. Lesne, H. S. J. van der Zant, P. G. Steeneken, B. A. Ivanov, E. Coronado, A. D. Caviglia

Abstract: Magnetic van der Waals materials provide an ideal playground for exploring the fundamentals of low-dimensional magnetism and open new opportunities for ultrathin spin processing devices. The Mermin-Wagner theorem dictates that as in reduced dimensions isotropic spin interactions cannot retain long-range correlations; the order is stabilized by magnetic anisotropy. Here, using ultrashort pulses of… ▽ More Magnetic van der Waals materials provide an ideal playground for exploring the fundamentals of low-dimensional magnetism and open new opportunities for ultrathin spin processing devices. The Mermin-Wagner theorem dictates that as in reduced dimensions isotropic spin interactions cannot retain long-range correlations; the order is stabilized by magnetic anisotropy. Here, using ultrashort pulses of light, we demonstrate all-optical control of magnetic anisotropy in the two-dimensional van der Waals antiferromagnet NiPS$_3$. Tuning the photon energy in resonance with an orbital transition between crystal-field split levels of the nickel ions, we demonstrate the selective activation of a sub-THz two-dimensional magnon mode. The pump polarization control of the magnon amplitude confirms that the activation is governed by the instantaneous magnetic anisotropy axis emergent in response to photoexcitation of orbital states with a lowered symmetry. Our results establish pum** of orbital resonances as a universal route for manipulating magnetic order in low-dimensional (anti)ferromagnets. △ Less

Submitted 10 October, 2020; originally announced October 2020.

Journal ref: Science Advances Vol. 7, no. 23, eabf3096 (2021)

Tunable shear strain from resonantly driven optical phonons

Authors: J. R. Hortensius, D. Afanasiev, A. Sasani, E. Bousquet, A. D. Caviglia

Abstract: Strain engineering has been extended recently to the ultrafast timescales, driving metal-insulator phase transitions and the propagation of ultrasonic demagnetization fronts. However, the non-linear lattice dynamics underpinning interfacial optoelectronic phase switching have not yet been addressed. Here we focus on the lattice dynamics initiated by impulsive resonant excitation of polar lattice v… ▽ More Strain engineering has been extended recently to the ultrafast timescales, driving metal-insulator phase transitions and the propagation of ultrasonic demagnetization fronts. However, the non-linear lattice dynamics underpinning interfacial optoelectronic phase switching have not yet been addressed. Here we focus on the lattice dynamics initiated by impulsive resonant excitation of polar lattice vibrations in LaAlO$_3$ single crystals, one of the most widely utilized substrates for oxide electronics. We show that ionic Raman scattering drives coherent oxygen octahedra rotations around a high-symmetry crystal axis and we identify, by means of DFT calculations, the underlying phonon-phonon coupling channel. Resonant lattice excitation is shown to generate longitudinal and transverse acoustic wavepackets, enabled by anisotropic optically-induced strain in and out of equilibrium. Importantly, shear strain wavepackets are found to be generated with extraordinary efficiency at the phonon resonance, being comparable in amplitude to the more conventional longitudinal acoustic waves, opening exciting perspectives for ultrafast material control. △ Less

Submitted 28 February, 2020; originally announced February 2020.

Comments: 12 pages, 9 figures

Journal ref: npj Quantum Mater. 5, 95 (2020)

Coupling lattice instabilities across the interface in ultrathin oxide heterostructures

Authors: T. C. van Thiel, J. Fowlie, C. Autieri, N. Manca, M. Šiškins, D. Afanasiev, S. Gariglio, A. D. Caviglia

Abstract: Oxide heterointerfaces constitute a rich platform for realizing novel functionalities in condensed matter. A key aspect is the strong link between structural and electronic properties, which can be modified by interfacing materials with distinct lattice symmetries. Here we determine the effect of the cubic-tetragonal distortion of $\text{SrTiO}_3$ on the electronic properties of thin films of… ▽ More Oxide heterointerfaces constitute a rich platform for realizing novel functionalities in condensed matter. A key aspect is the strong link between structural and electronic properties, which can be modified by interfacing materials with distinct lattice symmetries. Here we determine the effect of the cubic-tetragonal distortion of $\text{SrTiO}_3$ on the electronic properties of thin films of $\text{SrIrO}_3$, a topological crystalline metal hosting a delicate interplay between spin-orbit coupling and electronic correlations. We demonstrate that below the transition temperature at 105 K, $\text{SrIrO}_3$ orthorhombic domains couple directly to tetragonal domains in $\text{SrTiO}_3$. This forces the in-phase rotational axis to lie in-plane and creates a binary domain structure in the $\text{SrIrO}_3$ film. The close proximity to the metal-insulator transition in ultrathin $\text{SrIrO}_3$ causes the individual domains to have strongly anisotropic transport properties, driven by a reduction of bandwidth along the in-phase axis. The strong structure-property relationships in perovskites make these compounds particularly suitable for static and dynamic coupling at interfaces, providing a promising route towards realizing novel functionalities in oxide heterostructures. △ Less

Submitted 24 February, 2020; originally announced February 2020.

Comments: 5 pages, 4 figures

Journal ref: ACS Materials Letters, 2, 398-394 (2020)

Anisotropic magnetoresistance in spin-orbit semimetal SrIrO3

Authors: Dirk J. Groenendijk, Nicola Manca, Joeri de Bruijckere, Ana Mafalda R. V. L. Monteiro, Rocco Gaudenzi, Herre S. J. van der Zant, Andrea D. Caviglia

Abstract: SrIrO3, the three-dimensional member of the Ruddlesden-Popper iridates, is a paramagnetic semimetal characterised by a the delicate interplay between spin-orbit coupling and Coulomb repulsion. In this work, we study the anisotropic magnetoresistance (AMR) of SrIrO3 thin films, which is closely linked to spin-orbit coupling and probes correlations between electronic transport, magnetic order and or… ▽ More SrIrO3, the three-dimensional member of the Ruddlesden-Popper iridates, is a paramagnetic semimetal characterised by a the delicate interplay between spin-orbit coupling and Coulomb repulsion. In this work, we study the anisotropic magnetoresistance (AMR) of SrIrO3 thin films, which is closely linked to spin-orbit coupling and probes correlations between electronic transport, magnetic order and orbital states. We show that the low-temperature negative magnetoresistance is anisotropic with respect to the magnetic field orientation, and its angular dependence reveals the appearance of a fourfold symmetric component above a critical magnetic field. We show that this AMR component is of magnetocrystalline origin, and attribute the observed transition to a field-induced magnetic state in SrIrO3. △ Less

Submitted 24 January, 2020; originally announced January 2020.

Comments: 4 pges, 4 figures, and supplemental material

Light-driven ultrafast phonomagnetism

Authors: D. Afanasiev, J. R. Hortensius, B. A. Ivanov, A. Sasani, E. Bousquet, Y. M. Blanter, R. V. Mikhaylovskiy, A. V. Kimel, A. D. Caviglia

Abstract: Exciting atomic oscillations with light is a powerful technique to control the electronic properties of materials, leading to remarkable phenomena such as light-induced superconductivity and ultrafast insulator to metal transitions. Here we show that light-driven lattice vibrations can be utilised to encode efficiently spin information in a magnetic medium. Intense mid-infrared electric field puls… ▽ More Exciting atomic oscillations with light is a powerful technique to control the electronic properties of materials, leading to remarkable phenomena such as light-induced superconductivity and ultrafast insulator to metal transitions. Here we show that light-driven lattice vibrations can be utilised to encode efficiently spin information in a magnetic medium. Intense mid-infrared electric field pulses, tuned to resonance with a vibrational normal mode of antiferromagnetic DyFeO3, drive the emergence of long-living weak ferromagnetic order. Light-driven phonon displacements promptly lower the energy barrier separating competing magnetic states, allowing the alignment of spins to occur within a few picoseconds, via non-equilibrium dynamics of the magnetic energy landscape. △ Less

Submitted 4 December, 2019; originally announced December 2019.

Comments: 36 pages 25 figures

Journal ref: Nature Materials 20, 607-611 (2021)

Ultrathin complex oxide nanomechanical resonators

Authors: Dejan Davidovikj, Dirk J. Groenendijk, Ana Mafalda R. V. L. Monteiro, Andrew Dijkhoff, Dmytro Afanasiev, Herre S. J. van der Zant, Yingkai Huang, Erik van Heumen, Andrea D. Caviglia, Peter G. Steeneken

Abstract: Complex oxide thin films and heterostructures exhibit a profusion of exotic phenomena, often resulting from the intricate interplay between film and substrate. Recently it has become possible to isolate epitaxially grown single-crystalline layers of these materials, enabling the study of their properties in the absence of interface effects. In this work, we create ultrathin membranes of strongly c… ▽ More Complex oxide thin films and heterostructures exhibit a profusion of exotic phenomena, often resulting from the intricate interplay between film and substrate. Recently it has become possible to isolate epitaxially grown single-crystalline layers of these materials, enabling the study of their properties in the absence of interface effects. In this work, we create ultrathin membranes of strongly correlated materials and demonstrate top-down fabrication of nanomechanical resonators made out of \ce{SrTiO3} and \ce{SrRuO3}. Using laser interferometry, we successfully actuate and measure the motion of the nanodrum resonators. By measuring their temperature-dependent mechanical response, we observe signatures of structural phase transitions in \ce{SrTiO3}, which affect the strain and mechanical dissipation in the resonators. This approach can be extended to investigate phase transitions in a wide range of materials. Our study demonstrates the feasibility of integrating ultrathin complex oxide membranes for realizing nanoelectromechanical systems on arbitrary substrates. △ Less

Submitted 30 April, 2019; originally announced May 2019.

Berry phase engineering at oxide interfaces

Authors: D. J. Groenendijk, C. Autieri, T. C. van Thiel, W. Brzezicki, N. Gauquelin, P. Barone, K. H. W. van den Bos, S. van Aert, J. Verbeeck, A. Filippetti, S. Picozzi, M. Cuoco, A. D. Caviglia

Abstract: Geometric phases in condensed matter play a central role in topological transport phenomena such as the quantum, spin and anomalous Hall effect (AHE). In contrast to the quantum Hall effect - which is characterized by a topological invariant and robust against perturbations - the AHE depends on the Berry curvature of occupied bands at the Fermi level and is therefore highly sensitive to subtle cha… ▽ More Geometric phases in condensed matter play a central role in topological transport phenomena such as the quantum, spin and anomalous Hall effect (AHE). In contrast to the quantum Hall effect - which is characterized by a topological invariant and robust against perturbations - the AHE depends on the Berry curvature of occupied bands at the Fermi level and is therefore highly sensitive to subtle changes in the band structure. A unique platform for its manipulation is provided by transition metal oxide heterostructures, where engineering of emergent electrodynamics becomes possible at atomically sharp interfaces. We demonstrate that the Berry curvature and its corresponding vector potential can be manipulated by interface engineering of the correlated itinerant ferromagnet SrRuO$_3$ (SRO). Measurements of the AHE reveal the presence of two interface-tunable spin-polarized conduction channels. Using theoretical calculations, we show that the tunability of the AHE at SRO interfaces arises from the competition between two topologically non-trivial bands. Our results demonstrate how reconstructions at oxide interfaces can be used to control emergent electrodynamics on a nanometer-scale, opening new routes towards spintronics and topological electronics. △ Less

Submitted 12 October, 2018; originally announced October 2018.

Comments: 8 pages, 4 figures, (+ Supplementary Information)

Journal ref: Phys. Rev. Research 2, 023404 (2020)

Bimodal Phase Diagram of the Superfluid Density in LaAlO3/SrTiO3 Revealed by an Interfacial Waveguide Resonator

Authors: Nicola Manca, Daniel Bothner, Ana M. R. V. L. Monteiro, Dejan Davidovikj, Yildiz G. Sağlam, Mark Jenkins, Marc Gabay, Gary A. Steele, Andrea D. Caviglia

Abstract: We explore the superconducting phase diagram of the two-dimensional electron system at the LaAlO3/SrTiO3 interface by monitoring the frequencies of the cavity modes of a coplanar waveguide resonator fabricated in the interface itself. We determine the phase diagram of the superconducting transition as a function of temperature and electrostatic gating, finding that both the superfluid density and… ▽ More We explore the superconducting phase diagram of the two-dimensional electron system at the LaAlO3/SrTiO3 interface by monitoring the frequencies of the cavity modes of a coplanar waveguide resonator fabricated in the interface itself. We determine the phase diagram of the superconducting transition as a function of temperature and electrostatic gating, finding that both the superfluid density and the transition temperature follow a dome shape, but that the two are not monotonically related. The ground state of this 2DES is interpreted as a Josephson junction array, where a transition from long- to short-range order occurs as a function of the electronic do**. The synergy between correlated oxides and superconducting circuits is revealed to be a promising route to investigate these exotic compounds, complementary to standard magneto-transport measurements. △ Less

Submitted 31 January, 2019; v1 submitted 28 September, 2018; originally announced September 2018.

Comments: 5 pages, 4 figures and 10 pages of supplementary material

Journal ref: Phys. Rev. Lett. 122, 036801 (2019)

Band inversion driven by electronic correlations at the (111) LaAlO$_3$/SrTiO$_3$ interface

Authors: A. M. R. V. L. Monteiro, M. Vivek, D. J. Groenendijk, P. Bruneel, I. Leermakers, U. Zeitler, M. Gabay, A. D. Caviglia

Abstract: Quantum confinement at complex oxide interfaces establishes an intricate hierarchy of the strongly correlated $d$-orbitals which is widely recognized as a source of emergent physics. The most prominent example is the (001) LaAlO$_3$/SrTiO$_3$(LAO/STO) interface, which features a dome-shaped phase diagram of superconducting critical temperature and spin-orbit coupling (SOC) as a function of electro… ▽ More Quantum confinement at complex oxide interfaces establishes an intricate hierarchy of the strongly correlated $d$-orbitals which is widely recognized as a source of emergent physics. The most prominent example is the (001) LaAlO$_3$/SrTiO$_3$(LAO/STO) interface, which features a dome-shaped phase diagram of superconducting critical temperature and spin-orbit coupling (SOC) as a function of electrostatic do**, arising from a selective occupancy of $t_{2g}$ orbitals of different character. Here we study (111)-oriented LAO/STO interfaces - where the three $t_{2g}$ orbitals contribute equally to the sub-band states caused by confinement - and investigate the impact of this unique feature on electronic transport. We show that transport occurs through two sets of electron-like sub-bands, and the carrier density of one of the sets shows a non-monotonic dependence on the sample conductance. Using tight-binding modeling, we demonstrate that this behavior stems from a band inversion driven by on-site Coulomb interactions. The balanced contribution of all $t_{2g}$ orbitals to electronic transport is shown to result in strong SOC with reduced electrostatic modulation. △ Less

Submitted 20 August, 2018; v1 submitted 9 August, 2018; originally announced August 2018.

Comments: 5 pages, 4 figures, (+ supplemental material)

Journal ref: Phys. Rev. B 99, 201102 (2019)

Balanced electron-hole transport in spin-orbit semimetal SrIrO3 heterostructures

Authors: Nicola Manca, Dirk J. Groenendijk, Ilaria Pallecchi, Carmine Autieri, Lucas M. K. Tang, Francesca Telesio, Giordano Mattoni, Alix McCollam, Silvia Picozzi, Andrea D. Caviglia

Abstract: Relating the band structure of correlated semimetals to their transport properties is a complex and often open issue. The partial occupation of numerous electron and hole bands can result in properties that are seemingly in contrast with one another, complicating the extraction of the transport coefficients of different bands. The 5d oxide SrIrO3 hosts parabolic bands of heavy holes and light elec… ▽ More Relating the band structure of correlated semimetals to their transport properties is a complex and often open issue. The partial occupation of numerous electron and hole bands can result in properties that are seemingly in contrast with one another, complicating the extraction of the transport coefficients of different bands. The 5d oxide SrIrO3 hosts parabolic bands of heavy holes and light electrons in gapped Dirac cones due to the interplay between electron-electron interactions and spin-orbit coupling. We present a multifold approach relying on different experimental techniques and theoretical calculations to disentangle its complex electronic properties. By combining magnetotransport and thermoelectric measurements in a field-effect geometry with first-principles calculations, we quantitatively determine the transport coefficients of different conduction channels. Despite their different dispersion relationships, electrons and holes are found to have strikingly similar transport coefficients, yielding a holelike response under field-effect and thermoelectric measurements and a linear, electronlike Hall effect up to 33 T. △ Less

Submitted 16 February, 2018; v1 submitted 14 November, 2017; originally announced November 2017.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 97, 081105 (2018)

Charge do** and large lattice expansion in oxygen-deficient heteroepitaxial WO3

Authors: Giordano Mattoni, Alessio Filippetti, Nicola Manca, Pavlo Zubko, Andrea D. Caviglia

Abstract: Tungsten trioxide is a versatile material with widespread applications ranging from electrochromic and optoelectronic devices to water splitting and catalysis of chemical reactions. For technological applications, thin films of WO3 are particularly appealing, taking advantage from high surface-to-volume ratio and tunable physical properties. However, the growth of stoichiometric, crystalline thin… ▽ More Tungsten trioxide is a versatile material with widespread applications ranging from electrochromic and optoelectronic devices to water splitting and catalysis of chemical reactions. For technological applications, thin films of WO3 are particularly appealing, taking advantage from high surface-to-volume ratio and tunable physical properties. However, the growth of stoichiometric, crystalline thin films is challenging because the deposition conditions are very sensitive to the formation of oxygen vacancies. In this work, we show how background oxygen pressure during pulsed laser deposition can be used to tune the structural and electronic properties of WO3 thin films. By performing X-ray diffraction and low-temperature transport measurements, we find changes in WO3 lattice volume up to 10%, concomitantly with an insulator-to-metal transition as a function of increased level of electron do**. We use advanced ab initio calculations to describe in detail the properties of the oxygen vacancy defect states, and their evolution in terms of excess charge concentration. Our results depict an intriguing scenario where structural, electronic, optical, and transport properties of WO3 single-crystal thin films can all be purposely tuned by a suited control of oxygen vacancies formation during growth. △ Less

Submitted 14 November, 2017; originally announced November 2017.

Journal ref: Phys. Rev. Materials 2, 053402 (2018)

Superconducting quantum point contact with split gates in the two dimensional LaAlO3/SrTiO3 superfluid

Authors: Holger Thierschmann, Emre Mulazimoglu, Nicola Manca, Srijit Goswami, Teun M. Klapwijk, Andrea D. Caviglia

Abstract: One of the hallmark experiments of quantum transport is the observation of the quantized resistance in a point contact formed with split gates in GaAs/AlGaAs heterostructures. Being carried out on a single material, they represent in an ideal manner equilibrium reservoirs which are connected only through a few electron mode channel with certain transmission coefficients. It has been a long standin… ▽ More One of the hallmark experiments of quantum transport is the observation of the quantized resistance in a point contact formed with split gates in GaAs/AlGaAs heterostructures. Being carried out on a single material, they represent in an ideal manner equilibrium reservoirs which are connected only through a few electron mode channel with certain transmission coefficients. It has been a long standing goal to achieve similar experimental conditions also in superconductors, only reached in atomic scale mechanically tunable break junctions of conventional superconducting metals, but here the Fermi wavelength is so short that it leads to a mixing of quantum transport with atomic orbital physics. Here we demonstrate for the first time the formation of a superconducting quantum point contact (SQPC) with split gate technology in a superconductor, utilizing the unique gate tunability of the two dimensional superfluid at the LaAlO3/SrTiO3 (LAO/STO) interface. When the constriction is tuned through the action of metallic split gates we identify three regimes of transport: (i) SQPC for which the supercurrent is carried only by a few quantum transport channels. (ii) Superconducting island strongly coupled to the equilibrium reservoirs. (iii) Charge island with a discrete spectrum weakly coupled to the reservoirs. Our experiments demonstrate the feasibility of a new generation of mesoscopic all-superconductor quantum transport devices. △ Less

Submitted 2 October, 2017; originally announced October 2017.

Comments: 18 pages

Journal ref: Nat. Comms. 9, 2276 (2018)

Spin-orbit semimetal SrIrO$_3$ in the two-dimensional limit

Authors: D. J. Groenendijk, C. Autieri, J. Girovsky, M. Carmen Martinez-Velarte, N. Manca, G. Mattoni, A. M. R. V. L. Monteiro, N. Gauquelin, J. Verbeeck, A. F. Otte, M. Gabay, S. Picozzi, A. D. Caviglia

Abstract: We investigate the thickness-dependent electronic structure of ultrathin SrIrO$_3$ and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic structure is further studied by sc… ▽ More We investigate the thickness-dependent electronic structure of ultrathin SrIrO$_3$ and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic structure is further studied by scanning tunneling spectroscopy, showing that 4 unit cells SrIrO$_3$ is on the verge of a gap opening. Our density functional theory calculations reproduce the critical thickness of the transition and show that the opening of a gap in ultrathin SrIrO$_3$ is accompanied by antiferromagnetic order. △ Less

Submitted 27 June, 2017; originally announced June 2017.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Lett. 119, 256403 (2017)

Selective high frequency mechanical actuation driven by the VO2 electronic instability

Authors: Nicola Manca, Luca Pellegrino, Teruo Kanki, Warner J. Venstra, Giordano Mattoni, Yoshiyuki Higuchi, Hidekazu Tanaka, Andrea D. Caviglia, Daniele Marré

Abstract: Micro- and nano-electromechanical resonators are a fundamental building block of modern technology, used in environmental monitoring, robotics, medical tools as well as fundamental science. These devices rely on dedicated electronics to generate their driving signal, resulting in an increased complexity and size. Here, we present a new paradigm to achieve high-frequency mechanical actuation based… ▽ More Micro- and nano-electromechanical resonators are a fundamental building block of modern technology, used in environmental monitoring, robotics, medical tools as well as fundamental science. These devices rely on dedicated electronics to generate their driving signal, resulting in an increased complexity and size. Here, we present a new paradigm to achieve high-frequency mechanical actuation based on the metal-insulator transition of VO$\mathrm{_2}$, where the steep variation of its electronic properties enables to realize high-frequency electrical oscillations. The dual nature of this phase change, which is both electronic and structural, turns the electrical oscillations into an intrinsic actuation mechanism, powered by a small DC voltage and capable to selectively excite the different mechanical modes of a microstructure. Our results pave the way towards the realization of micro- and nano-electro-mechanical systems with autonomous actuation from integrated DC power sources such as solar cells or micro-batteries. △ Less

Submitted 18 September, 2017; v1 submitted 15 March, 2017; originally announced April 2017.

Comments: Main text: 6 pages, 4 figures Supplemental Material: 16 pages, 7 sections

Journal ref: Adv. Mater. 29, 1701618 (2017)

Enhancement of electron mobility at oxide interfaces induced by WO3 overlayers

Authors: Giordano Mattoni, David J. Baek, Nicola Manca, Nils Verhagen, Lena F. Kourkoutis, Alessio Filippetti, Andrea D. Caviglia

Abstract: Interfaces between complex oxides constitute a unique playground for 2D electron systems (2DES), where superconductivity and magnetism can arise from combinations of bulk insulators. The 2DES at the LaAlO3/SrTiO3 interface is one of the most studied in this regard, and its origin is determined by both the presence of a polar field in LaAlO3 and the insurgence of point defects, such as oxygen vacan… ▽ More Interfaces between complex oxides constitute a unique playground for 2D electron systems (2DES), where superconductivity and magnetism can arise from combinations of bulk insulators. The 2DES at the LaAlO3/SrTiO3 interface is one of the most studied in this regard, and its origin is determined by both the presence of a polar field in LaAlO3 and the insurgence of point defects, such as oxygen vacancies and intermixed cations. These defects usually reside in the conduction channel and are responsible for a decreased electronic mobility. In this work we use an amorphous WO3 overlayer to control the defect formation and obtain an increased electron mobility and effective mass in WO3/LaAlO3/SrTiO3 heterostructures. The studied system shows a sharp insulator-to-metal transition as a function of both LaAlO3 and WO3 layer thickness. Low-temperature magnetotransport reveals a strong magnetoresistance reaching 900% at 10 T and 1.5 K, the presence of multiple conduction channels with carrier mobility up to 80 000 cm2/Vs and an unusually high effective mass of 5.6 me. The amorphous character of the WO3 overlayer makes this a versatile approach for defect control at oxide interfaces, which could be applied to other heterestrostures disregarding the constraints imposed by crystal symmetry. △ Less

Submitted 21 April, 2017; originally announced April 2017.

Journal ref: ACS Applied Materials & Interfaces (2017)

Two-dimensional superconductivity at the (111)LaAlO$_3$/SrTiO$_3$ interface

Authors: A. M. R. V. L. Monteiro, D. J. Groenendijk, I. Groen, J. de Bruijckere, R. Gaudenzi, H. S. J. van der Zant, A. D. Caviglia

Abstract: We report on the discovery and transport study of the superconducting ground state present at the (111)LaAlO$_3$/SrTiO$_3$ interface. The superconducting transition is consistent with a Berezinskii-Kosterlitz-Thouless transition and its 2D nature is further corroborated by the anisotropy of the critical magnetic field, as calculated by Tinkham. The estimated superconducting layer thickness and coh… ▽ More We report on the discovery and transport study of the superconducting ground state present at the (111)LaAlO$_3$/SrTiO$_3$ interface. The superconducting transition is consistent with a Berezinskii-Kosterlitz-Thouless transition and its 2D nature is further corroborated by the anisotropy of the critical magnetic field, as calculated by Tinkham. The estimated superconducting layer thickness and coherence length are 10 nm and 60 nm, respectively. The results of this work provide a new platform to clarify the microscopic details of superconductivity at LaAlO$_3$/SrTiO$_3$ interfaces, in particular in what concerns the link with orbital symmetry. △ Less

Submitted 30 June, 2017; v1 submitted 14 March, 2017; originally announced March 2017.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 96, 020504 (2017)

Multiple supersonic phase fronts launched at a complex-oxide hetero-interface

Authors: M. Först, K. R. Beyerlein, R. Mankowsky, W. Hu, G. Mattoni, S. Catalano, M. Gibert, O. Yefanov, J. N. Clark, A. Frano, J. M. Glownia, M. Chollet, H. Lemke, B. Moser, S. P. Collins, S. S. Dhesi, A. D. Caviglia, J. -M. Triscone, A. Cavalleri

Abstract: Selective optical excitation of a substrate lattice can drive phase changes across hetero-interfaces. This phenomenon is a non-equilibrium analogue of static strain control in heterostructures and may lead to new applications in optically controlled phase change devices. Here, we make use of time-resolved non-resonant and resonant x-ray diffraction to clarify the underlying physics, and to separat… ▽ More Selective optical excitation of a substrate lattice can drive phase changes across hetero-interfaces. This phenomenon is a non-equilibrium analogue of static strain control in heterostructures and may lead to new applications in optically controlled phase change devices. Here, we make use of time-resolved non-resonant and resonant x-ray diffraction to clarify the underlying physics, and to separate different microscopic degrees of freedom in space and time. We measure the dynamics of the lattice and that of the charge disproportionation in NdNiO3, when an insulator-metal transition is driven by coherent lattice distortions in the LaAlO3 substrate. We find that charge redistribution propagates at supersonic speeds from the interface into the NdNiO3 film, followed by a sonic lattice wave. When combined with measurements of magnetic disordering and of the metal-insulator transition, these results establish a hierarchy of events for ultrafast control at complex oxide hetero-interfaces. △ Less

Submitted 13 December, 2016; originally announced December 2016.

Comments: 20 pages, 4 figures

Side gate tunable Josephson junctions at the LaAlO$_3$/SrTiO$_3$ interface

Authors: A. M. R. V. L. Monteiro, D. J. Groenendijk, N. Manca, E. Mulazimoglu, S. Goswami, Ya. Blanter, L. M. K. Vandersypen, A. D. Caviglia

Abstract: Novel physical phenomena arising at the interface of complex oxide heterostructures offer exciting opportunities for the development of future electronic devices. Using the prototypical LaAlO$_3$/SrTiO$_3$ interface as a model system, we employ a single-step lithographic process to realize gate tunable Josephson junctions through a combination of lateral confinement and local side gating. The acti… ▽ More Novel physical phenomena arising at the interface of complex oxide heterostructures offer exciting opportunities for the development of future electronic devices. Using the prototypical LaAlO$_3$/SrTiO$_3$ interface as a model system, we employ a single-step lithographic process to realize gate tunable Josephson junctions through a combination of lateral confinement and local side gating. The action of the side gates is found to be comparable to that of a local back gate, constituting a robust and efficient way to control the properties of the interface at the nanoscale. We demonstrate that the side gates enable reliable tuning of both the normal-state resistance and the critical (Josephson) current of the constrictions. The conductance and Josephson current show mesoscopic fluctuations as a function of the applied side gate voltage, and the analysis of their amplitude enables the extraction of the phase coherence and thermal lengths. Finally, we realize a superconducting quantum interference device in which the critical currents of each of the constriction-type Josephson junctions can be controlled independently via the side gates. △ Less

Submitted 19 January, 2017; v1 submitted 12 September, 2016; originally announced September 2016.

Comments: 7 pages, 5 figures

Quantum paraelectricity probed by superconducting resonators

Authors: Dejan Davidovikj, Nicola Manca, Herre S. J. van der Zant, Andrea D. Caviglia, Gary A. Steele

Abstract: Superconducting coplanar waveguide (CPW), resonators are powerful and versatile tools used in areas ranging from radiation detection to circuit quantum electrodynamics. Their potential for low intrinsic losses makes them attractive as sensitive probes of electronic properties of bulk materials and thin films. Here we use superconducting MoRe CPW resonators, to investigate the high-frequency (up to… ▽ More Superconducting coplanar waveguide (CPW), resonators are powerful and versatile tools used in areas ranging from radiation detection to circuit quantum electrodynamics. Their potential for low intrinsic losses makes them attractive as sensitive probes of electronic properties of bulk materials and thin films. Here we use superconducting MoRe CPW resonators, to investigate the high-frequency (up to 0.3 GHz) and low temperature (down to 3.5 K) permittivity of SrTiO3, a non-linear dielectric on the verge of a ferroelectric transition (quantum paraelectricity). We perform a quantitative analysis of its dielectric properties as a function of external dc bias (up to +-15V), rf power and mode number and discuss our results within the framework of the most recent theoretical models. We also discuss the origin of a fatigue effect that reduces the tunability of the dielectric constant of SrTiO3, which we relate to the presence of oxygen vacancies. △ Less

Submitted 24 May, 2017; v1 submitted 27 July, 2016; originally announced July 2016.

Journal ref: Phys. Rev. B 95, 214513 (2017)

Epitaxial growth and thermodynamic stability of SrIrO3/SrTiO3 heterostructures

Authors: D. J. Groenendijk, N. Manca, G. Mattoni, L. Kootstra, S. Gariglio, Y. Huang, E. van Heumen, A. D. Caviglia

Abstract: Obtaining high-quality thin films of 5d transition metal oxides is essential to explore the exotic semimetallic and topological phases predicted to arise from the combination of strong electron correlations and spin-orbit coupling. Here, we show that the transport properties of SrIrO3 thin films, grown by pulsed laser deposition, can be optimized by considering the effect of laser-induced modifica… ▽ More Obtaining high-quality thin films of 5d transition metal oxides is essential to explore the exotic semimetallic and topological phases predicted to arise from the combination of strong electron correlations and spin-orbit coupling. Here, we show that the transport properties of SrIrO3 thin films, grown by pulsed laser deposition, can be optimized by considering the effect of laser-induced modification of the SrIrO3 target surface. We further demonstrate that bare SrIrO3 thin films are subject to degradation in air and are highly sensitive to lithographic processing. A crystalline SrTiO3 cap layer deposited in-situ is effective in preserving the film quality, allowing us to measure metallic transport behavior in films with thicknesses down to 4 unit cells. In addition, the SrTiO3 encapsulation enables the fabrication of devices such as Hall bars without altering the film properties, allowing precise (magneto)transport measurements on micro- and nanoscale devices. △ Less

Submitted 5 August, 2016; v1 submitted 9 May, 2016; originally announced May 2016.

Comments: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett. 109, 041906 (2016)

Striped nanoscale phase separation at the metal-insulator transition of heteroepitaxial nickelates

Authors: Giordano Mattoni, Pavlo Zubko, Francesco Maccherozzi, Alexander J. H. van der Torren, Daan B. Boltje, Marios Hadjimichael, Nicola Manca, Sara Catalano, Marta Gibert, Yanwei Liu, Jan Aarts, Jean-Marc Triscone, Sarnjeet S. Dhesi, Andrea D. Caviglia

Abstract: Nucleation processes of mixed-phase states are an intrinsic characteristic of first-order phase transitions, typically related to local symmetry breaking. Direct observation of emerging mixed-phase regions in materials showing a first-order metal-insulator transition (MIT) offers unique opportunities to uncover their driving mechanism. Using photoemission electron microscopy, we image the nanoscal… ▽ More Nucleation processes of mixed-phase states are an intrinsic characteristic of first-order phase transitions, typically related to local symmetry breaking. Direct observation of emerging mixed-phase regions in materials showing a first-order metal-insulator transition (MIT) offers unique opportunities to uncover their driving mechanism. Using photoemission electron microscopy, we image the nanoscale formation and growth of insulating domains across the temperature-driven MIT in NdNiO3 epitaxial thin films. Heteroepitaxy is found to strongly determine the nanoscale nature of the phase transition, inducing preferential formation of striped domains along the terraces of atomically flat stepped surfaces. We show that the distribution of transition temperatures is an intrinsic local property, set by surface morphology and stable across multiple temperature cycles. Our data provides new insights into the MIT of heteroepitaxial nickelates and points to a rich, nanoscale phenomenology in this strongly correlated material. △ Less

Submitted 16 November, 2016; v1 submitted 14 February, 2016; originally announced February 2016.

Journal ref: Nat. Commun. 7 (2016)

Quantum interference in an interfacial superconductor

Authors: Srijit Goswami, Emre Mulazimoglu, Ana M. R. V. L. Monteiro, Roman Wölbing, Dieter Koelle, Reinhold Kleiner, Ya. M. Blanter, Lieven M. K. Vandersypen, Andrea D. Caviglia

Abstract: The two-dimensional superconductor formed at the interface between the complex oxides, lanthanum aluminate (LAO) and strontium titanate (STO) has several intriguing properties that set it apart from conventional superconductors. Most notably, an electric field can be used to tune its critical temperature (T$_c$), revealing a dome-shaped phase diagram reminiscent of high T$_c$ superconductors. So f… ▽ More The two-dimensional superconductor formed at the interface between the complex oxides, lanthanum aluminate (LAO) and strontium titanate (STO) has several intriguing properties that set it apart from conventional superconductors. Most notably, an electric field can be used to tune its critical temperature (T$_c$), revealing a dome-shaped phase diagram reminiscent of high T$_c$ superconductors. So far, experiments with oxide interfaces have measured quantities which probe only the magnitude of the superconducting order parameter and are not sensitive to its phase. Here, we perform phase-sensitive measurements by realizing the first superconducting quantum interference devices (SQUIDs) at the LAO/STO interface. Furthermore, we develop a new paradigm for the creation of superconducting circuit elements, where local gates enable in-situ creation and control of Josephson junctions. These gate-defined SQUIDs are unique in that the entire device is made from a single superconductor with purely electrostatic interfaces between the superconducting reservoir and the weak link. We complement our experiments with numerical simulations and show that the low superfluid density of this interfacial superconductor results in a large, gate-controllable kinetic inductance of the SQUID. Our observation of robust quantum interference opens up a new pathway to understand the nature of superconductivity at oxide interfaces. △ Less

Submitted 13 July, 2016; v1 submitted 14 December, 2015; originally announced December 2015.

Comments: Version prior to peer review. Final version published in Nature Nanotechnology

Journal ref: Nature Nanotechnology 11, 861 (2016)

Spatially resolved ultrafast magnetic dynamics launched at a complex-oxide hetero-interface

Authors: M. Först, A. D. Caviglia, R. Scherwitzl, R. Mankowsky, P. Zubko, V. Khanna, H. Bromberger, S. B. Wilkins, Y. -D. Chuang, W. S. Lee, W. F. Schlotter, J. J. Turner, G. L. Dakovski, M. P. Minitti, J. Robinson, S. R. Clark, D. Jaksch, J. -M. Triscone, J. P. Hill, S. S. Dhesi, A. Cavalleri

Abstract: Static strain in complex oxide heterostructures has been extensively used to engineer electronic and magnetic properties at equilibrium. In the same spirit, deformations of the crystal lattice with light may be used to achieve functional control across hetero-interfaces dynamically. Here, by exciting large amplitude infrared-active vibrations in a LaAlO3 substrate we induce magnetic order melting… ▽ More Static strain in complex oxide heterostructures has been extensively used to engineer electronic and magnetic properties at equilibrium. In the same spirit, deformations of the crystal lattice with light may be used to achieve functional control across hetero-interfaces dynamically. Here, by exciting large amplitude infrared-active vibrations in a LaAlO3 substrate we induce magnetic order melting in a NdNiO3 film across a hetero-interface. Femtosecond Resonant Soft X-ray Diffraction is used to determine the spatial and temporal evolution of the magnetic disordering. We observe a magnetic melt front that grows from the substrate interface into the film, at a speed that suggests electronically driven propagation. Light control and ultrafast phase front propagation at hetero-interfaces may lead to new opportunities in optomagnetism, for example by driving domain wall motion to transport information across suitably designed devices. △ Less

Submitted 4 May, 2015; originally announced May 2015.

Comments: 35 pages, 8 Figures (both incl. Supplement)

Journal ref: Nature Materials, Vol. 14, 883-888 (2015)

Growth-induced electron mobility enhancement at the LaAlO$_3$/SrTiO$_3$ interface

Authors: A. Fête, C. Cancellieri, D. Li, D. Stornaiuolo, A. D. Caviglia, S. Gariglio, J. -M. Triscone

Abstract: We have studied the electronic properties of the 2D electron liquid present at the LaAlO$_3$/SrTiO$_3$ interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650°C exhibit the highest low temperature mobility ($\approx 10000 \textrm{ cm}^2/\textrm{Vs}$) and the lowest sheet carrier density ($\approx 5\times 10^{12} \textrm{ cm}^{-2}$). Th… ▽ More We have studied the electronic properties of the 2D electron liquid present at the LaAlO$_3$/SrTiO$_3$ interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650°C exhibit the highest low temperature mobility ($\approx 10000 \textrm{ cm}^2/\textrm{Vs}$) and the lowest sheet carrier density ($\approx 5\times 10^{12} \textrm{ cm}^{-2}$). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800-900°C) display carrier densities in the range of $\approx 2-5 \times 10^{13} \textrm{ cm}^{-2}$ and mobilities of $\approx 1000 \textrm{ cm}^2/\textrm{Vs}$ at 4K. Reducing their carrier density by field effect to $8\times 10^{12} \textrm{ cm}^{-2}$ lowers their mobilites to $\approx 50 \textrm{ cm}^2/\textrm{Vs}$ bringing the conductance to the weak-localization regime. △ Less

Submitted 19 March, 2015; originally announced March 2015.

Journal ref: Appl. Phys. Lett. 106, 051604 (2015)

Giant negative magnetoresistance driven by spin-orbit coupling at the LAO/STO interface

Authors: M. Diez, A. M. R. V. L. Monteiro, G. Mattoni, E. Cobanera, T. Hyart, E. Mulazimoglu, N. Bovenzi, C. W. J. Beenakker, A. D. Caviglia

Abstract: The LAO/STO interface hosts a two-dimensional electron system that is unusually sensitive to the application of an in-plane magnetic field. Low-temperature experiments have revealed a giant negative magnetoresistance (drop** by 70\%), attributed to a magnetic-field induced transition between interacting phases of conduction electrons with Kondo-screened magnetic impurities. Here we report on exp… ▽ More The LAO/STO interface hosts a two-dimensional electron system that is unusually sensitive to the application of an in-plane magnetic field. Low-temperature experiments have revealed a giant negative magnetoresistance (drop** by 70\%), attributed to a magnetic-field induced transition between interacting phases of conduction electrons with Kondo-screened magnetic impurities. Here we report on experiments over a broad temperature range, showing the persistence of the magnetoresistance up to the 20~K range --- indicative of a single-particle mechanism. Motivated by a striking correspondence between the temperature and carrier density dependence of our magnetoresistance measurements we propose an alternative explanation. Working in the framework of semiclassical Boltzmann transport theory we demonstrate that the combination of spin-orbit coupling and scattering from finite-range impurities can explain the observed magnitude of the negative magnetoresistance, as well as the temperature and electron density dependence. △ Less

Submitted 18 May, 2015; v1 submitted 17 December, 2014; originally announced December 2014.

Comments: new updates from feedback and review process. main text: improved discussion of the mechanisms of the MR; a discussion of a rescaling of the MR with a characteristic field B*(n). supplemental: theoretical estimate of the "sweet spot" density and window; effect of an out-of-plane B-field component on the MR; discussion of spin-orbit corrections to Boltzmann transport. 6+4 pages, 4+4 figures

Journal ref: Phys. Rev. Lett. 115, 016803 (2015)

Nanoscale Electrostatic Control of Oxide Interfaces

Authors: Srijit Goswami, Emre Mulazimoglu, Lieven M. K. Vandersypen, Andrea D. Caviglia

Abstract: We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO$_3$/SrTiO$_3$ as a model system, we demonstrate controllable electrostatic confinement of electrons to nanoscale regions in the conducting interface. The excellent gate response, ultra-low leakage currents, and long term stability of these gates allow us to perform a variety… ▽ More We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO$_3$/SrTiO$_3$ as a model system, we demonstrate controllable electrostatic confinement of electrons to nanoscale regions in the conducting interface. The excellent gate response, ultra-low leakage currents, and long term stability of these gates allow us to perform a variety of studies in different device geometries from room temperature down to 50 mK. Using a split-gate device we demonstrate the formation of a narrow conducting channel whose width can be controllably reduced via the application of appropriate gate voltages. We also show that a single narrow gate can be used to induce locally a superconducting to insulating transition. Furthermore, in the superconducting regime we see indications of a gate-voltage controlled Josephson effect. △ Less

Submitted 19 March, 2015; v1 submitted 8 October, 2014; originally announced October 2014.

Comments: Version after peer review; includes additional data on superconductivity

Journal ref: Nano Letters 15, 2627 (2015)

Melting of Charge Stripes in Vibrationally Driven La1.875Ba0.125CuO4: Assessing the Respective Roles of Electronic and Lattice Order in Frustrated Superconductors

Authors: M. Först, R. I. Tobey, H. Bromberger, S. B. Wilkins, V. Khanna, A. D. Caviglia, Y. -D. Chuang, W. S. Lee, W. F. Schlotter, J. J. Turner, M. P. Minitti, O. Krupin, Z. J. Xu, J. S. Wen, G. D. Gu, S. S. Dhesi, A. Cavalleri, J. P. Hill

Abstract: We report femtosecond resonant soft X-ray diffraction measurements of the dynamics of the charge order and of the crystal lattice in non-superconducting, stripe-ordered La1.875Ba0.125CuO4. Excitation of the in-plane Cu-O stretching phonon with a mid-infrared pulse has been previously shown to induce a transient superconducting state in the closely related compound La1.675Eu0.2Sr0.125CuO4. In La1.8… ▽ More We report femtosecond resonant soft X-ray diffraction measurements of the dynamics of the charge order and of the crystal lattice in non-superconducting, stripe-ordered La1.875Ba0.125CuO4. Excitation of the in-plane Cu-O stretching phonon with a mid-infrared pulse has been previously shown to induce a transient superconducting state in the closely related compound La1.675Eu0.2Sr0.125CuO4. In La1.875Ba0.125CuO4, we find that the charge stripe order melts promptly on a sub-picosecond time scale. Surprisingly, the low temperature tetragonal distortion is only weakly reduced, reacting on significantly longer time scales that do not correlate with light-induced superconductivity. This experiment suggests that charge modulations alone, and not the LTT distortion, prevent superconductivity in equilibrium. △ Less

Submitted 18 February, 2015; v1 submitted 10 June, 2014; originally announced June 2014.

Comments: 16 pages, 3 figures

Journal ref: Physical Review Letters, Vol. 112, 157002 (2014)

In-plane electronic confinement in superconducting LaAlO$_3$/SrTiO$_3$ nanostructures

Authors: D. Stornaiuolo, S. Gariglio, N. J. G. Couto, A. Fete, A. D. Caviglia, G. Seyfarth, D. Jaccard, A. F. Morpurgo, J. -M. Triscone

Abstract: We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO$_3$/SrTiO$_3$ interface. Bridges with lateral dimensions down to 500~nm were realized using electron beam lithography. Their detailed characterization shows that processing and confinement do not alter the transport parameters of the 2DEG. The devices exhibit superconduc… ▽ More We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO$_3$/SrTiO$_3$ interface. Bridges with lateral dimensions down to 500~nm were realized using electron beam lithography. Their detailed characterization shows that processing and confinement do not alter the transport parameters of the 2DEG. The devices exhibit superconducting behavior tunable by electric field effect. In the normal state, we measured universal conductance fluctuations, signature of phase-coherent transport in small structures. The achievement of reliable lateral confinement of the 2DEG opens the way to the realization of quantum electronic devices at the LaAlO$_3$/SrTiO$_3$ interface. △ Less

Submitted 6 June, 2013; originally announced June 2013.

Comments: 10 pages, 4 figures

Journal ref: Appl. Phys. Lett. 101, 222601 (2012)

Rashba induced magnetoconductance oscillations in the LaAlO3-SrTiO3 heterostructure

Authors: A. Fête, S. Gariglio, A. D. Caviglia, J. -M. Triscone, M. Gabay

Abstract: We report measurements of the normal state in-plane magnetoconductance in gated LaAlO$_3$-SrTiO$_3$ samples. As the orientation of the magnetic field changes within the plane of the interface, the signal displays periodic oscillations with respect to the angle between the field and the direction of the current. We show that in the underdoped to optimally doped range, a Fermi surface reconstruction… ▽ More We report measurements of the normal state in-plane magnetoconductance in gated LaAlO$_3$-SrTiO$_3$ samples. As the orientation of the magnetic field changes within the plane of the interface, the signal displays periodic oscillations with respect to the angle between the field and the direction of the current. We show that in the underdoped to optimally doped range, a Fermi surface reconstruction takes place due to the Rashba spin-orbit term and that the oscillations are due to a magnetic field induced opening and closing of a gap at the $Γ$ point for those Ti out-of-plane orbitals having their band minimum close to the Fermi energy of the system. △ Less

Submitted 13 July, 2012; v1 submitted 23 March, 2012; originally announced March 2012.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 86, 201105(R) (2012)

Ultrafast strain engineering in complex oxide heterostructures

Authors: A. D. Caviglia, R. Scherwitzl, P. Popovich, W. Hu, H. Bromberger, R. Singla, M. Mitrano, M. C. Hoffmann, S. Kaiser, P. Zubko, S. Gariglio, J. -M. Triscone, M. Först, A. Cavalleri

Abstract: We report on ultrafast optical experiments in which femtosecond mid-infrared radiation is used to excite the lattice of complex oxide heterostructures. By tuning the excitation energy to a vibrational mode of the substrate, a long-lived five-order-of-magnitude increase of the electrical conductivity of NdNiO3 epitaxial thin films is observed as a structural distortion propagates across the interfa… ▽ More We report on ultrafast optical experiments in which femtosecond mid-infrared radiation is used to excite the lattice of complex oxide heterostructures. By tuning the excitation energy to a vibrational mode of the substrate, a long-lived five-order-of-magnitude increase of the electrical conductivity of NdNiO3 epitaxial thin films is observed as a structural distortion propagates across the interface. Vibrational excitation, extended here to a wide class of heterostructures and interfaces, may be conducive to new strategies for electronic phase control at THz repetition rates. △ Less

Submitted 14 November, 2011; originally announced November 2011.

Two-dimensional quantum oscillations of the conductance at LaAlO3/SrTiO3 interfaces

Authors: A. D. Caviglia, S. Gariglio, C. Cancellieri, B. Sacépé, A. Fête, N. Reyren, M. Gabay, A. F. Morpurgo, J. -M. Triscone

Abstract: We report on a study of magnetotransport in LaAlO3/SrTiO3 interfaces characterized by mobilities of the order of several thousands cm$^{2}$/Vs. We observe Shubnikov-de Haas oscillations that indicate a two-dimensional character of the Fermi surface. The frequency of the oscillations signals a multiple sub-bands occupation in the quantum well or a multiple valley configuration. From the temperature… ▽ More We report on a study of magnetotransport in LaAlO3/SrTiO3 interfaces characterized by mobilities of the order of several thousands cm$^{2}$/Vs. We observe Shubnikov-de Haas oscillations that indicate a two-dimensional character of the Fermi surface. The frequency of the oscillations signals a multiple sub-bands occupation in the quantum well or a multiple valley configuration. From the temperature dependence of the oscillation amplitude we extract an effective carrier mass $m^{*}\simeq1.45$\,$m_{e}$. An electric field applied in the back-gate geometry increases the mobility, the carrier density and the oscillation frequency. △ Less

Submitted 28 July, 2010; originally announced July 2010.

Comments: 4 pages, 4 figures

Diodes with Breakdown Voltages Enhanced by the Metal-Insulator Transition of LaAlO$_3$-SrTiO$_3$ Interfaces

Authors: R. Jany, M. Breitschaft, G. Hammerl, A. Horsche, C. Richter, S. Paetel, J. Mannhart, N. Stucki, N. Reyren, S. Gariglio, P. Zubko, A. D. Caviglia, J. -M. Triscone

Abstract: Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C. Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C. △ Less

Submitted 6 May, 2010; originally announced May 2010.

Seebeck effect in the conducting LaAlO_{3}/SrTiO_{3} interface

Authors: I. Pallecchi, M. Codda, E. Galleani d'Agliano, D. Marre', A. D. Caviglia, N. Reyren, S. Gariglio, J. -M. Triscone

Abstract: The observation of metallic behavior at the interface between insulating oxides has triggered worldwide efforts to shed light on the physics of these systems and clarify some still open issues, among which the dimensional character of the conducting system. In order to address this issue, we measure electrical transport (Seebeck effect, Hall effect and conductivity) in LaAlO_{3}/SrTiO_{3} interf… ▽ More The observation of metallic behavior at the interface between insulating oxides has triggered worldwide efforts to shed light on the physics of these systems and clarify some still open issues, among which the dimensional character of the conducting system. In order to address this issue, we measure electrical transport (Seebeck effect, Hall effect and conductivity) in LaAlO_{3}/SrTiO_{3} interfaces and, for comparison, in a doped SrTiO_{3} bulk single crystal. In these experiments, the carrier concentration is tuned, using the field effect in a back gate geometry. The combined analysis of all experimental data at 77 K indicates that the thickness of the conducting layer is ~7 nm and that the Seebeck effect data are well described by a two-dimensional (2D) density of states. We find that the back gate voltage is effective in varying not only the charge density, but also the thickness of the conducting layer, which is found to change by a factor of ~2, using an electric field between -4 and +4MV/m at 77K. No enhancement of the Seebeck effect due to the electronic confinement and no evidence for two-dimensional quantization steps are observed at the interfaces. △ Less

Submitted 9 February, 2010; originally announced February 2010.

Comments: 15 pages, 5 figures

Journal ref: Phys. Rev. B 81, 085414 (2010)

Tunable Rashba spin-orbit interaction at oxide interfaces

Authors: A. D. Caviglia, M. Gabay, S. Gariglio, N. Reyren, C. Cancellieri, J. -M. Triscone

Abstract: The quasi-two-dimensional electron gas found at the LaAlO3/SrTiO3 interface offers exciting new functionalities, such as tunable superconductivity, and has been proposed as a new nanoelectronics fabrication platform. Here we lay out a new example of an electronic property arising from the interfacial breaking of inversion symmetry, namely a large Rashba spin-orbit interaction, whose magnitude ca… ▽ More The quasi-two-dimensional electron gas found at the LaAlO3/SrTiO3 interface offers exciting new functionalities, such as tunable superconductivity, and has been proposed as a new nanoelectronics fabrication platform. Here we lay out a new example of an electronic property arising from the interfacial breaking of inversion symmetry, namely a large Rashba spin-orbit interaction, whose magnitude can be modulated by the application of an external electric field. By means of magnetotransport experiments we explore the evolution of the spin-orbit coupling across the phase diagram of the system. We uncover a steep rise in Rashba interaction occurring around the do** level where a quantum critical point separates the insulating and superconducting ground states of the system. △ Less

Submitted 18 December, 2009; originally announced December 2009.

Electrostatically tuned quantum superconductor-metal-insulator transition at the LaAlO3/SrTiO3 interface

Authors: T. Schneider, A. D. Caviglia, S. Gariglio, N. Reyren, 2, J. -M. Triscone

Abstract: Recently superconductivity at the interface between the insulators LaAlO3 and SrTiO3 has been tuned with the electric field effect to an unprecedented range of transition temperatures. Here we perform a detailed finite size scaling analysis to explore the compatibility of the phase transition line with Berezinskii-Kosterlitz-Thouless (BKT) behavior and a 2D-quantum phase(QP)-transition. In an in… ▽ More Recently superconductivity at the interface between the insulators LaAlO3 and SrTiO3 has been tuned with the electric field effect to an unprecedented range of transition temperatures. Here we perform a detailed finite size scaling analysis to explore the compatibility of the phase transition line with Berezinskii-Kosterlitz-Thouless (BKT) behavior and a 2D-quantum phase(QP)-transition. In an intermediate regime, limited by a gate voltage dependent limiting length, we uncover remarkable consistency with a BKT-critical line ending at a metallic quantum critical point, separating a weakly localized insulator from the superconducting phase. Our estimates for the critical exponents of the 2D-QP-transition, z=1 and nu=0.66, suggest that it belongs to the 3D-xy universality class. △ Less

Submitted 16 April, 2009; originally announced April 2009.

Comments: 10 pages, 10 figures

Superconductor - Normal and Quantum Superconductor-Insulator Transition at the LaAlO3/SrTiO3Interface

Authors: T. Schneider, A. D. Caviglia, S. Gariglio, N. Reyren, D. Jaccard, J. -M. Triscone

Abstract: Superconductivity at the interface between the insulators LaAlO3 and SrTiO3 has been tuned with the electric field effect. The data provide evidence for a two dimensional quantum superconductor to insulator (2D-QSI) transition. Here we explore the compatibility of this phase transition line with Berezinskii-Kosterlitz-Thouless (BKT) behavior and a 2D-QSI transition. In an intermediate regime, li… ▽ More Superconductivity at the interface between the insulators LaAlO3 and SrTiO3 has been tuned with the electric field effect. The data provide evidence for a two dimensional quantum superconductor to insulator (2D-QSI) transition. Here we explore the compatibility of this phase transition line with Berezinskii-Kosterlitz-Thouless (BKT) behavior and a 2D-QSI transition. In an intermediate regime, limited by a finite size effect, we uncover remarkable consistency with BKT- criticality, weak localization in the insulating state and non-Drude behavior in the normal state. Our estimates for the critical exponents of the 2D-QSI-transition, z =1 and nu=3, suggest that it belongs to the 3D-xy universality class. △ Less

Submitted 4 July, 2008; originally announced July 2008.

Comments: 4 pages, 4 figures

Electric Field Control of the LaAlO$_{3}$/SrTiO$_{3}$ Interface Ground State

Authors: A. D. Caviglia, S. Gariglio, N. Reyren, D. Jaccard, T. Schneider, M. Gabay, S. Thiel, G. Hammerl, J. Mannhart, J. -M. Triscone

Abstract: Interfaces between complex oxides are emerging as one of the most interesting playgrounds in condensed matter physics. In this special setting, in which translational symmetry is artificially broken, a variety of novel electronic phases can be promoted. Theoretical studies predict complex phase diagrams and suggest the key role of the carrier density in determining the systems ground states. A p… ▽ More Interfaces between complex oxides are emerging as one of the most interesting playgrounds in condensed matter physics. In this special setting, in which translational symmetry is artificially broken, a variety of novel electronic phases can be promoted. Theoretical studies predict complex phase diagrams and suggest the key role of the carrier density in determining the systems ground states. A particularly fascinating system is the interface between the insulators LaAlO$_{3}$ and SrTiO$_{3}$, which displays conductivity with high mobility. Recently two possible ground states have been experimentally identified: a magnetic state and a two dimensional (2D) superconducting condensate. In this Letter we use the electric field effect to explore the phase diagram of the system. The electrostatic tuning of the carrier density allows an on/off switching of superconductivity and drives a quantum phase transition (QPT) between a 2D superconducting state and an insulating state (2D-QSI). Analyses of the magnetotransport properties in the insulating state are consistent with weak localisation and do not provide evidence for magnetism. The electric field control of superconductivity demonstrated here opens the way to the development of novel mesoscopic superconducting circuits △ Less

Submitted 3 July, 2008; originally announced July 2008.

Comments: 11 pages, 4 figures