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Resonant band hybridization in alloyed transition metal dichalcogenide heterobilayers
Authors:
Alessandro Catanzaro,
Armando Genco,
Charalambos Louca,
David A. Ruiz-Tijerina,
Daniel J. Gillard,
Luca Sortino,
Aleksey Kozikov,
Evgeny M. Alexeev,
Riccardo Pisoni,
Lee Hague,
Kenji Watanabe,
Takashi Taniguchi,
Klauss Ensslin,
Kostya S. Novoselov,
Vladimir Fal'ko,
Alexander I. Tartakovskii
Abstract:
Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, we fabricate heterobilayers made from monolayers of WSe$_2$ (or MoSe$_2$) and M…
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Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, we fabricate heterobilayers made from monolayers of WSe$_2$ (or MoSe$_2$) and Mo$_x$W$_{1-x}$Se$_2$ alloy and observe nontrivial tuning of the resultant bandstructure as a function of concentration $x$. We monitor this evolution by measuring the energy of photoluminescence (PL) of the interlayer exciton (IX) composed of an electron and hole residing in different monolayers. In Mo$_x$W$_{1-x}$Se$_2$/WSe$_2$, we observe a strong IX energy shift of $\approx$100 meV for $x$ varied from 1 to 0.6. However, for $x<0.6$ this shift saturates and the IX PL energy asymptotically approaches that of the indirect bandgap in bilayer WSe$_2$. We theoretically interpret this observation as the strong variation of the conduction band K valley for $x>0.6$, with IX PL arising from the K-K transition, while for $x<0.6$, the bandstructure hybridization becomes prevalent leading to the dominating momentum-indirect K-Q transition. This bandstructure hybridization is accompanied with strong modification of IX PL dynamics and nonlinear exciton properties. Our work provides foundation for bandstructure engineering in van der Waals heterostructures highlighting the importance of hybridization effects and opening a way to devices with accurately tailored electronic properties.
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Submitted 23 September, 2023;
originally announced September 2023.
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Curvature-enhanced localised emission from dark states in wrinkled monolayer WSe2 at room temperature
Authors:
Sebastian Wood,
Filipe Richheimer,
Tom Vincent,
Vivian Tong,
Alessandro Catanzaro,
Yameng Cao,
Olga Kazakova,
Fernando A. Castro
Abstract:
Localised emission from defect states in monolayer transition metal dichalcogenides is of great interest for optoelectronic and quantum device applications. Recent progress towards high temperature localised emission relies on the application of strain to induce highly confined excitonic states. Here we propose an alternative paradigm based on curvature, rather than in-plane stretching, achieved t…
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Localised emission from defect states in monolayer transition metal dichalcogenides is of great interest for optoelectronic and quantum device applications. Recent progress towards high temperature localised emission relies on the application of strain to induce highly confined excitonic states. Here we propose an alternative paradigm based on curvature, rather than in-plane stretching, achieved through free-standing wrinkles of monolayer tungsten diselenide (WSe2). We probe these nanostructures using tip-enhanced optical spectroscopy to reveal the spatial localisation of out-of-plane polarised emission from the WSe2 wrinkles. Based on the photoluminescence and Raman scattering signatures resolved with nanoscale spatial resolution, we propose the existence of a manifold of spin-forbidden excitonic states that are activated by the local curvature of the WSe2. We are able to access these dark states through the out-of-plane polarised surface plasmon polariton resulting in enhanced strongly localised emission at room temperature, which is of potential interest for quantum technologies and photonic devices.
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Submitted 2 May, 2023;
originally announced May 2023.
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Good Practice Guide on the electrical characterization of graphene using non-contact and high-throughput methods
Authors:
Alexandra Fabricius,
Alessandro Cultrera,
Alessandro Catanzaro
Abstract:
The electrical characterisation of graphene, either in plane sheets or in properly geometrised form can be approached using non-contact methods already employed for thin film materials. The extraordinary thinness (and, correspondingly, the volume) of graphene, however, makes the proper application of these methods difficult. The electrical properties of interest (sheet electrical resistivity/condu…
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The electrical characterisation of graphene, either in plane sheets or in properly geometrised form can be approached using non-contact methods already employed for thin film materials. The extraordinary thinness (and, correspondingly, the volume) of graphene, however, makes the proper application of these methods difficult. The electrical properties of interest (sheet electrical resistivity/conductivity, concentration and mobility of charge carriers) must be indirectly derived from the measurement outcome by geometrical and electrical modelling; the assumptions behind such models (e.g., uniformity and isotropy, effective value of the applied fields, etc.) require careful consideration. The traceability of the measurement to the International System of units and a proper expression of measurement uncertainty is an issue.
This guide focuses on non-contact and high-throughput methods, that are methods where the graphene sample surface is not physically contacted with any metallic electrodes at any stage. A companion guide about contact methods is also available. The methods discussed are:
- Measurement of surface potential and work function using Scanning Kelvin Probe Microscopy (SKPM); - Measurement of sheet resistance by Microwave Resonant Cavity; - Measurement of sheet resistance by Terahertz time-domain spectroscopy (THz-TDS); For each method, a corresponding measurement protocol is discussed, which describes: - The measurement principle; - Sample requirements and preparation; - A description of the measurement equipment / apparatus; - Calibration standards and ways to achieve a traceable measurement;
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Submitted 28 July, 2020;
originally announced July 2020.
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Good Practice Guide on the electrical characterisation of graphene using contact methods
Authors:
Alexandra Fabricius,
Alessandro Catanzaro,
Alessandro Cultrera
Abstract:
This guide is a deliverable of the Joint Research Project 16NRM01 GRACE -- Develo** electrical characterisation methods for future graphene electronics. The project belongs to the European Metrology Programme for Innovation and Research (EMPIR). GRACE is framed within the Normative targeted program, and its overall goal is (1) the development of validated protocols for the measurement of the ele…
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This guide is a deliverable of the Joint Research Project 16NRM01 GRACE -- Develo** electrical characterisation methods for future graphene electronics. The project belongs to the European Metrology Programme for Innovation and Research (EMPIR). GRACE is framed within the Normative targeted program, and its overall goal is (1) the development of validated protocols for the measurement of the electrical properties of graphene, and their implementation in order to achieve accurate and fastthroughput measurement of graphene; and (2) the collaboration with international standardisation committees in order to initiate and develop dedicated documentary standards for the electrical characterisation of graphene. The adoption of this GPGs and, when published, the corresponding standards, will allow industry to perform accurate measurements of the electrical properties of graphene and thereby provide customers with reliable and comparable specifications of graphene as an industrial product.
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Submitted 27 July, 2020;
originally announced July 2020.
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Spin-valley dynamics in alloy-based transition metal dichalcogenide heterobilayers
Authors:
V. Kravtsov,
A. D. Liubomirov,
R. V. Cherbunin,
A. Catanzaro,
A. Genco,
D. Gillard,
E. M. Alexeev,
T. Ivanova,
E. Khestanova,
I. A. Shelykh,
I. V. Iorsh,
A. I. Tartakovskii,
M. S. Skolnick,
D. N. Krizhanovskii
Abstract:
Van der Waals heterobilayers based on 2D transition metal dichalcogenides have been recently shown to support robust and long-lived valley polarization for potential valleytronic applications. However, the role of the band structure and alignment of the constituent layers in the underlying dynamics remains largely unexplored. Here we study spin--valley relaxation dynamics in heterobilayers with di…
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Van der Waals heterobilayers based on 2D transition metal dichalcogenides have been recently shown to support robust and long-lived valley polarization for potential valleytronic applications. However, the role of the band structure and alignment of the constituent layers in the underlying dynamics remains largely unexplored. Here we study spin--valley relaxation dynamics in heterobilayers with different band structures engineered via the use of alloyed monolayer semiconductors. Through a combination of time-resolved Kerr rotation spectroscopic measurements and theoretical modelling for Mo$_{1-x}$W$_{x}$Se$_2$/WSe$_2$ samples with different chemical compositions and stacking angles, we uncover the roles of interlayer exciton recombination and charge carrier spin depolarization in the overall valley dynamics. Our results provide insights into the microscopic spin--valley polarization mechanisms in van der Waals heterostructures for the development of future 2D valleytronic devices.
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Submitted 7 July, 2020; v1 submitted 27 May, 2020;
originally announced May 2020.
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Highly nonlinear trion-polaritons in a monolayer semiconductor
Authors:
R. P. A. Emmanuele,
M. Sich,
O. Kyriienko,
V. Shahnazaryan,
F. Withers,
A. Catanzaro,
P. M. Walker,
F. A. Benimetskiy,
M. S. Skolnick,
A. I. Tartakovskii,
I. A. Shelykh,
D. N. Krizhanovskii
Abstract:
Highly nonlinear optical materials with strong effective photon-photon interactions (Kerr-like nonlinearity) are required in the development of novel quantum sources of light as well as for ultrafast and quantum optical signal processing circuitry. Here we report very large Kerr-like nonlinearities by employing strong optical transitions of charged excitons (trions) observed in semiconducting tran…
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Highly nonlinear optical materials with strong effective photon-photon interactions (Kerr-like nonlinearity) are required in the development of novel quantum sources of light as well as for ultrafast and quantum optical signal processing circuitry. Here we report very large Kerr-like nonlinearities by employing strong optical transitions of charged excitons (trions) observed in semiconducting transition metal dichalcogenides (TMDCs). By hybridising trions in monolayer MoSe$_2$ at low electron densities with a microcavity mode, we realise trion-polaritons exhibiting significant energy shifts at very small photon fluxes due to phase space filling. Most notably, the strong trion-polariton nonlinearity is found to be 10 to 1000 larger than in other polariton systems, including neutral exciton-polaritons in TMDCs. Furthermore it exceeds by factors of $\sim 10^3-10^5$ the magnitude of Kerr nonlinearity in bare TMDCs, graphene and other widely used optical materials (e.g. Si, AlGaAs etc) in weak light-matter coupling regimes. The results are in good agreement with a theory which accounts for the composite nature of excitons and trions and deviation of their statistics from that of ideal bosons and fermions. This work opens a new highly nonlinear system for quantum optics applications enabling in principle scalability and control through nano-engineering of van der Waals heterostructures.
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Submitted 31 October, 2019;
originally announced October 2019.
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Measurement of local optomechanical properties of a direct bandgap 2D semiconductor
Authors:
F. Benimetskiy,
V. Sharov,
P. A. Alekseev,
V. Kravtsov,
K. Agapev,
I. Sinev,
I. Mukhin,
A. Catanzaro,
R. Polozkov,
A. Tartakovskii,
A. Samusev,
M. S. Skolnick,
D. N. Krizhanovskii,
I. A. Shelykh,
I. Iorsh
Abstract:
Strain engineering is a powerful tool for tuning physical properties of 2D materials, including monolayer transition metal dichalcogenides (TMD) -- direct bandgap semiconductors with strong excitonic response. Here, we demonstrate an approach for local characterization of strain-induced modification of excitonic photoluminescence in TMD-based materials. We reversibly stress a monolayer of MoSe…
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Strain engineering is a powerful tool for tuning physical properties of 2D materials, including monolayer transition metal dichalcogenides (TMD) -- direct bandgap semiconductors with strong excitonic response. Here, we demonstrate an approach for local characterization of strain-induced modification of excitonic photoluminescence in TMD-based materials. We reversibly stress a monolayer of MoSe$_2$ with an AFM tip and perform spatio-spectral map** of the excitonic photoluminescence in the vicinity of the indentation point. To fully reproduce the experimental data, we introduce the linear dependence of the exciton energy and corresponding photoluminescence intensity on the induced strain. Careful account for the optical resolution allows extracting these quantities with good agreement with the previous measurements, which involved macroscopic sample deformation. Our approach is a powerful tool for the study of local optomechanical properties of 2D direct bandgap semiconductors with strong excitonic response.
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Submitted 30 May, 2019;
originally announced May 2019.
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Imaging of interlayer coupling in van der Waals heterostructures using a bright-field optical microscope
Authors:
Evgeny M. Alexeev,
Alessandro Catanzaro,
Oleksandr V. Skrypka,
Pramoda K. Nayak,
Seongjoon Ahn,
Sangyeon Pak,
Juwon Lee,
Jung Inn Sohn,
Kostya S. Novoselov,
Hyeon Suk Shin,
Alexander I. Tartakovskii
Abstract:
Vertically stacked atomic layers from different layered crystals can be held together by van der Waals forces, which can be used for building novel heterostructures, offering a platform for develo** a new generation of atomically thin, transparent and flexible devices. The performance of these devices is critically dependent on the layer thickness and the interlayer electronic coupling, influenc…
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Vertically stacked atomic layers from different layered crystals can be held together by van der Waals forces, which can be used for building novel heterostructures, offering a platform for develo** a new generation of atomically thin, transparent and flexible devices. The performance of these devices is critically dependent on the layer thickness and the interlayer electronic coupling, influencing the hybridisation of the electronic states as well as charge and energy transfer between the layers. The electronic coupling is affected by the relative orientation of the layers as well as by the cleanliness of their interfaces. Here, we demonstrate an efficient method for monitoring interlayer coupling in heterostructures made from transition metal dichalcogenides using photoluminescence imaging in a bright-field optical microscope. The colour and brightness in such images are used here to identify mono- and few-layer crystals, and to track changes in the interlayer coupling and the emergence of interlayer excitons after thermal annealing in mechanically exfoliated flakes as well as a function of the twist angle in atomic layers grown by chemical vapour deposition. Material and crystal thickness sensitivity of the presented imaging technique makes it a powerful tool for characterisation of van der Waals heterostructures assembled by a wide variety of methods, using combinations of materials obtained through mechanical or chemical exfoliation and crystal growth.
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Submitted 1 May, 2017; v1 submitted 23 December, 2016;
originally announced December 2016.
