-
Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs
Authors:
J. Lloyd-Hughes,
S. K. E. Merchant,
F. Lan,
H. H. Tan,
C. Jagadish,
E. Castro-Camus,
M. B. Johnston
Abstract:
The carrier dynamics of photoexcited electrons in the vicinity of the surface of (NH4)2S-passivated GaAs were studied via terahertz (THz) emission spectroscopy and optical-pump THz-probe spectroscopy. THz emission spectroscopy measurements, coupled with Monte Carlo simulations of THz emission, revealed that the surface electric field of GaAs reverses after passivation. The conductivity of photoe…
▽ More
The carrier dynamics of photoexcited electrons in the vicinity of the surface of (NH4)2S-passivated GaAs were studied via terahertz (THz) emission spectroscopy and optical-pump THz-probe spectroscopy. THz emission spectroscopy measurements, coupled with Monte Carlo simulations of THz emission, revealed that the surface electric field of GaAs reverses after passivation. The conductivity of photoexcited electrons was determined via optical-pump THz-probe spectroscopy, and was found to double after passivation. These experiments demonstrate that passivation significantly reduces the surface state density and surface recombination velocity of GaAs. Finally, we have demonstrated that passivation leads to an enhancement in the power radiated by photoconductive switch THz emitters, thereby showing the important influence of surface chemistry on the performance of ultrafast THz photonic devices.
△ Less
Submitted 20 October, 2006;
originally announced October 2006.
-
Charge trap** in polymer transistors probed by terahertz spectroscopy and scanning probe potentiometry
Authors:
J. Lloyd-Hughes,
T. Richards,
H. Sirringhaus,
E. Castro-Camus,
L. M. Herz,
M. B. Johnston
Abstract:
Terahertz time-domain spectroscopy and scanning probe potentiometry were used to investigate charge trap** in polymer field-effect transistors fabricated on a silicon gate. The hole density in the transistor channel was determined from the reduction in the transmitted terahertz radiation under an applied gate voltage. Prolonged device operation creates an exponential decay in the differential…
▽ More
Terahertz time-domain spectroscopy and scanning probe potentiometry were used to investigate charge trap** in polymer field-effect transistors fabricated on a silicon gate. The hole density in the transistor channel was determined from the reduction in the transmitted terahertz radiation under an applied gate voltage. Prolonged device operation creates an exponential decay in the differential terahertz transmission, compatible with an increase in the density of trapped holes in the polymer channel. Taken in combination with scanning probe potentionmetry measurements, these results indicate that device degradation is largely a consequence of hole trap**, rather than of changes to the mobility of free holes in the polymer.
△ Less
Submitted 18 September, 2006; v1 submitted 11 August, 2006;
originally announced August 2006.
-
Detecting the full polarisation state of terahertz transients
Authors:
E. Castro-Camus,
J. Lloyd-Hughes,
M. D. Fraser,
H. H. Tan,
C. Jagadish,
M. B. Johnston
Abstract:
We have developed a detector which records the full polarisation state of a terahertz (THz) pulse propagating in free space. The three-electrode photoconductive receiver simultaneously records the electric field of an electromagnetic pulse in two orthogonal directions as a function of time. A prototype device fabricated on Fe+ ion implanted InP exhibited a cross polarised extinction ratio better…
▽ More
We have developed a detector which records the full polarisation state of a terahertz (THz) pulse propagating in free space. The three-electrode photoconductive receiver simultaneously records the electric field of an electromagnetic pulse in two orthogonal directions as a function of time. A prototype device fabricated on Fe+ ion implanted InP exhibited a cross polarised extinction ratio better than 390:1. The design and optimisation of this device are discussed along with its significance for the development of new forms of polarisation sensitive time domain spectroscopy, including THz circular dichroism spectroscopy.
△ Less
Submitted 14 March, 2006;
originally announced March 2006.
-
Simulation and optimization of arsenic-implanted THz emitters
Authors:
M. B. Johnston,
J. Lloyd-Hughes,
E. Castro-Camus,
M. D. Fraser,
C. Jagadish
Abstract:
We have used a three-dimensional pseudo-classical Monte Carlo simulation to investigate the effects of As+ ionimplantation on pulsed terahertz radiation emitters. Devices based on surface-field emitters and photoconductive switches have been modelled. Two implantations of As+ ions at 1.0 MeV and 2.4 MeV were found to produce a uniform distribution of vacancies over the volume of GaAs contributin…
▽ More
We have used a three-dimensional pseudo-classical Monte Carlo simulation to investigate the effects of As+ ionimplantation on pulsed terahertz radiation emitters. Devices based on surface-field emitters and photoconductive switches have been modelled. Two implantations of As+ ions at 1.0 MeV and 2.4 MeV were found to produce a uniform distribution of vacancies over the volume of GaAs contributing to THz generation in these devices. We calculate that ionimplantation increases the THz bandwidth of the devices with the cost of decreasing the spectral intensity at lower THz frequencies.
△ Less
Submitted 10 February, 2006; v1 submitted 9 February, 2006;
originally announced February 2006.
-
Polarisation-Sensitive THz Detectors
Authors:
M. B. Johnston,
E. Castro-Camus,
J. Lloyd-Hughes,
M. D. Fraser,
H. H. Tan,
C. Jagadish
Abstract:
We have developed a detector of coherent terahertz (THz) radiation that can recover the full polarisation state of a THz transient. The device is three-contact photoconductive receiver, which is capable of recording two time-varying electric field components of a THz pulse simultaneously. Our receiver was fabricated on Fe+ implanted InP and showed a cross-polarised extinction ratio greater than…
▽ More
We have developed a detector of coherent terahertz (THz) radiation that can recover the full polarisation state of a THz transient. The device is three-contact photoconductive receiver, which is capable of recording two time-varying electric field components of a THz pulse simultaneously. Our receiver was fabricated on Fe+ implanted InP and showed a cross-polarised extinction ratio greater than 100:1. The detector will be useful for spectroscopy of birefringent and optically active materials.
△ Less
Submitted 9 February, 2006;
originally announced February 2006.
-
Photoconductive detection of arbitrary polarised terahertz pulses
Authors:
E. Castro-Camus,
J. Lloyd-Hughes,
M. B. Johnston,
M. D. Fraser,
H. H. Tan,
C. Jagadish
Abstract:
To perform polarization sensitive THz-TDS, it is necessary to be able to measure two (preferably orthogonal) electric field components of a terahertz transient. We have developed a polarization sensitive detector by fabricating a three-contact photoconductive receiver.
To perform polarization sensitive THz-TDS, it is necessary to be able to measure two (preferably orthogonal) electric field components of a terahertz transient. We have developed a polarization sensitive detector by fabricating a three-contact photoconductive receiver.
△ Less
Submitted 2 February, 2006;
originally announced February 2006.
-
Polarisation-sensitive terahertz detection by multicontact photoconductive receivers
Authors:
E. Castro-Camus,
J. Lloyd-Hughes,
M. B. Johnston,
M. D. Fraser,
H. H. Tan,
C. Jagadish
Abstract:
We have developed a terahertz radiation detector that measures both the amplitude and polarization of the electric field as a function of time. The device is a three-contact photoconductive receiver designed so that two orthogonal electric-field components of an arbitrary polarized electromagnetic wave may be detected simultaneously. The detector was fabricated on Fe+ ion-implanted InP. Polariza…
▽ More
We have developed a terahertz radiation detector that measures both the amplitude and polarization of the electric field as a function of time. The device is a three-contact photoconductive receiver designed so that two orthogonal electric-field components of an arbitrary polarized electromagnetic wave may be detected simultaneously. The detector was fabricated on Fe+ ion-implanted InP. Polarization-sensitive detection is demonstrated with an extinction ratio better than 100:1. This type of device will have immediate application in studies of birefringent and optically active materials in the far-infrared region of the spectrum.
△ Less
Submitted 4 October, 2005;
originally announced October 2005.
-
Three-dimensional carrier-dynamics simulation of terahertz emission from photoconductive switches
Authors:
E. Castro-Camus,
J. Lloyd-Hughes,
M. B. Johnston
Abstract:
A semi-classical Monte Carlo model for studying three-dimensional carrier dynamics in photoconductive switches is presented. The model was used to simulate the process of photoexcitation in GaAs-based photoconductive antennas illuminated with pulses typical of mode-locked Ti:Sapphire lasers. We analyzed the power and frequency bandwidth of THz radiation emitted from these devices as a function o…
▽ More
A semi-classical Monte Carlo model for studying three-dimensional carrier dynamics in photoconductive switches is presented. The model was used to simulate the process of photoexcitation in GaAs-based photoconductive antennas illuminated with pulses typical of mode-locked Ti:Sapphire lasers. We analyzed the power and frequency bandwidth of THz radiation emitted from these devices as a function of bias voltage, pump pulse duration and pump pulse location. We show that the mechanisms limiting the THz power emitted from photoconductive switches fall into two regimes: when illuminated with short duration (<40 fs) laser pulses the energy distribution of the Gaussian pulses constrains the emitted power, while for long (>40 fs) pulses, screening is the primary power-limiting mechanism. A discussion of the dynamics of bias field screening in the gap region is presented. The emitted terahertz power was found to be enhanced when the exciting laser pulse was in close proximity to the anode of the photoconductive emitter, in agreement with experimental results. We show that this enhancement arises from the electric field distribution within the emitter combined with a difference in the mobilities of electrons and holes.
△ Less
Submitted 4 October, 2005;
originally announced October 2005.
-
Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches
Authors:
J. Lloyd-Hughes,
E. Castro-Camus,
M. B. Johnston
Abstract:
We simulate the terahertz emission from laterally-biased InGaAs and InP using a three-dimensional carrier dynamics model in order to optimise the semiconductor material. Incident pump-pulse parameters of current Ti:Sapphire and Er:fibre lasers are chosen, and the simulation models the semiconductor's bandstructure using parabolic Gamma, L and X valleys, and heavy holes. The emitted terahertz rad…
▽ More
We simulate the terahertz emission from laterally-biased InGaAs and InP using a three-dimensional carrier dynamics model in order to optimise the semiconductor material. Incident pump-pulse parameters of current Ti:Sapphire and Er:fibre lasers are chosen, and the simulation models the semiconductor's bandstructure using parabolic Gamma, L and X valleys, and heavy holes. The emitted terahertz radiation is propagated within the semiconductor and into free space using a model based on the Drude-Lorentz dielectric function. As the InGaAs alloy approaches InAs an increase in the emitted power is observed, and this is attributed to a greater electron mobility. Additionally, low-temperature grown and ion-implanted InGaAs are modelled using a finite carrier trap** time. At sub-picosecond trap** times the terahertz bandwidth is found to increase significantly at the cost of a reduced emission power.
△ Less
Submitted 17 November, 2005; v1 submitted 11 July, 2005;
originally announced July 2005.
-
Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission
Authors:
J. Lloyd-Hughes,
E. Castro-Camus,
M. D. Fraser,
C. Jagadish,
M. B. Johnston
Abstract:
We have studied terahertz (THz) emission from arsenic-ion implanted GaAs both experimentally and using a three-dimensional carrier dynamics simulation. A uniform density of vacancies was formed over the optical absorption depth of bulk GaAs samples by performing multi-energy implantations of arsenic ions (1 and 2.4MeV) and subsequent thermal annealing. In a series of THz emission experiments the…
▽ More
We have studied terahertz (THz) emission from arsenic-ion implanted GaAs both experimentally and using a three-dimensional carrier dynamics simulation. A uniform density of vacancies was formed over the optical absorption depth of bulk GaAs samples by performing multi-energy implantations of arsenic ions (1 and 2.4MeV) and subsequent thermal annealing. In a series of THz emission experiments the frequency of peak THz power was found to increase significantly from 1.4 to 2.2THz when the ion implantation dose was increased from 10^13 to 10^16 cm-3. We used a semi-classical Monte-Carlo simulation of ultra-fast carrier dynamics to reproduce and explain these results. The effect of the ion-induced damage was included in the simulation by considering carrier scattering at neutral and charged impurities, as well as carrier trap** at defect sites. Higher vacancy concentrations and shorter carrier trap** times both contributed to shorter simulated THz pulses, the latter being more important over experimentally realistic parameter ranges.
△ Less
Submitted 11 July, 2005;
originally announced July 2005.
